CN1318851C - Silex glass bonded grid-type high shock acceleration meter - Google Patents
Silex glass bonded grid-type high shock acceleration meter Download PDFInfo
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- CN1318851C CN1318851C CNB2004100123563A CN200410012356A CN1318851C CN 1318851 C CN1318851 C CN 1318851C CN B2004100123563 A CNB2004100123563 A CN B2004100123563A CN 200410012356 A CN200410012356 A CN 200410012356A CN 1318851 C CN1318851 C CN 1318851C
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Abstract
The present invention discloses a grid type high impact accelerometer bonded by silicon glass, which relates to a microelectronic mechanical system structure element in the technical field of microelectronic mechanical technology processing. The accelerometer is composed of a glass substrate, a differential action electrode, a movable electrode, a movable electrode leading wire, a silicon step, a fixed silicon wafer, a cantilever beam and a silicon wafer. The differential action electrode is made on the glass substrate, and the movable electrode is made on the silicon wafer. The glass substrate and the silicon wafer are bonded into a silicon glass bonding sheet, which enables a differential action variable capacitor structure of an area change method to be formed between the differential action electrode and the movable electrode so as to achieve the measurement of the variation of acceleration. The present invention has the advantages of large test capacitor signal, high sensitivity, simple structure, strong reproducibility, high rate of finished products, easy batch processing, low cost, use of severe environment and high impact and high overload conditions, etc., and is especially suitable to be used as a movable microelectronic mechanical structure element for the detection of acceleration signals and angle acceleration signals under high impact and high overload environment.
Description
Technical field
The present invention relates to the grid type high shock acceleration mete of a kind of silex glass bonding in the microelectromechanical systems processing technique field, be specially adapted to do the device of the movable microelectron mechanical structure that acceleration signal and angular acceleration signal detect under various HI high impacts, the high overload environment.
Background technology
Microelectromechanical systems claims MEMS again, it is meant that size is centimetre below the magnitude, characteristic dimension is in micron dimension, may command, movable microelectromechanicdevice device, it is at the mechanical component of realizing on the millimicron size existing on many macroscopic scales, and and microelectronics organically in conjunction with constituting system with specific function, it have in light weight, volume is little, cost is low and advantage such as integrated.Micro-electronic mechanical system technique rises in the mid-80, obtains fast development the beginning of the nineties.Many in the world developed countries all are placed on the status of first developing to micro-electronic mechanical system technique at present.The U.S. classifies micro-electronic mechanical system technique and spationautics and infotech as the three big gordian techniquies of 21 century.Microelectromechanical systems both can collect sensor, actuator and digital circuit on a block semiconductor chip, realized that total system is integrated, sensor, actuator and circuit can be made respectively again mix again integrated.The main application fields of microelectromechanical systems has: guidance, navigation, micro-satellite, weapons, radar, optical communication, microwave communication, medical science etc.Micro-electronic mechanical system technique develop rapidly abroad, the research and development achievement is exceedingly fast to the speed that product transforms.Because it meets the general trend of human technical development, promptly realize more function with less resources, be rapidly developed in the period of 10 in the past and nanometer technology is listed as the micro-/ nano technology, be called as one of gordian technique of 21st century.
The comb capacitance type accelerometer of using in microelectromechanical systems at present has simple in structure, easy batch machining, advantage that detection sensitivity is high, but work owing to adopt change gap mode, cause paster easily and lost efficacy, functional reliability is low, can not use under the condition of rugged surroundings and HI high impact, high overload.
Summary of the invention
Technical matters to be solved by this invention just provides a kind of grid type high shock acceleration mete of silex glass bonding of the differential variable capacitor structure that can change the area mode, and device of the present invention also has can avoid movable plate electrode and fixed plate paster to lose efficacy, so the reliability height; It is big, highly sensitive to detect capacitance signal; Simple in structure, repeatable strong, high, the easy batch machining of yield rate, with low cost and advantage such as can under the condition of rugged surroundings and HI high impact, high overload, use.
Technical matters to be solved by this invention is realized by following technical proposal:
It comprises glass substrate 1 the present invention, differential electrode 2, movable electrode 3, movable electrode lead-in wire 4, silicon bench 5, movable silicon chip 6, fixedly silicon chip 7, semi-girder 8, silicon chip 9, wherein on glass substrate 1, adopt photoetching process to form differential electrode 2, movable electrode 4 graphic structures that go between, adopt hydrofluorite corrosive liquid corrosion differential electrode 2, movable electrode 4 graphic structures that go between form shallow slot structure, magnetron sputtering covers chromium on glass substrate 1, platinum, gold metal layer, adopt stripping technology to peel off differential electrode 2, the movable electrode metal level beyond 4 graphic structures that goes between forms differential electrode 2, movable electrode 4 structures that go between; On silicon chip 9, adopt photoetching process to form silicon bench 5 graphic structures, adopt reactive plasma etching method etching silicon chip 9, be etched into silicon bench 5 structures on the silicon chip 9, magnetron sputtering covers chromium, platinum, gold metal layer on silicon chip 9, adopt photoetching process to form movable electrode 3 graphic structures, with chromium gold corrosive liquid corrosion movable electrode 3 graphic structures, form movable electrode 3 structures; On silicon chip 9, adopt photoetching process to form movable silicon chip 6, fixedly silicon chip 7, semi-girder 8 graphic structures, with the movable silicon chip 6 of inductively coupled plasma etching method etching, fixedly silicon chip 7, semi-girder 8 graphic structures, form movable silicon chip 6, fixedly silicon chip 7, semi-girder 8 structures; The mutual contraposition of one side exposing differential electrode 2, movable electrode lead-in wire 4 on the one side of silicon bench 5 on the silicon chip 9 and the glass substrate 1 is bonded to the silex glass bonding pad, forms the differential variable capacitor structure that changes the area mode between differential electrode 2 and the movable electrode 3; The silex glass bonding pad is put into silicon anisotropic etching liquid wet etching, form movable silicon chip 6, fixedly silicon chip 7, semi-girder 8 hanging structures; Differential electrode 2, movable electrode lead-in wire 4 usefulness spun golds are connected with the pin of shell, and sealing cap is made the grid type high shock acceleration mete of silex glass bonding.
Form to change the differential variable capacitor structure of area mode on the present invention's every movable electrode 3 and the glass substrate 1 between corresponding two differential electrodes 2, the differential change of the relative area of formation changes with acceleration change between movable electrode 3 and the corresponding differential electrode 2.
The present invention compares background technology and has following advantage:
1, the present invention is owing to adopt formation differential electrode 2 on the glass substrate 1, on silicon chip 9, form movable silicon chip 6, movable electrode 3 and semi-girder 8, thereby the differential capacitor of realizing formation between movable electrode 3 and the differential electrode 2 is worked to change the area mode, avoid movable plate electrode and fixed plate paster to lose efficacy, improved reliability, and it is big, highly sensitive to detect capacitance signal, can satisfy the performance of working under the condition of rugged surroundings and HI high impact, high overload.
2, the present invention is owing to adopt the manufacturing of microelectron-mechanical technology, so it has simple in structure, repeatable strong, high, the easy batch machining of yield rate, advantage such as with low cost.
Description of drawings
Fig. 1 is a main TV structure synoptic diagram of the present invention.
Fig. 2 is a plan structure synoptic diagram of the present invention.
Embodiment
With reference to Fig. 1, Fig. 2, it comprises glass substrate 1, differential electrode 2, movable electrode 3, movable electrode lead-in wire 4, silicon bench 5, movable silicon chip 6, fixedly silicon chip 7, semi-girder 8, silicon chip 9 the present invention, wherein on glass substrate 1, adopt photoetching process to form differential electrode 2, movable electrode 4 graphic structures that go between, embodiment adopts commercially available general lithographic equipment to prepare one deck photoresist at 7740 type glass substrate, 1 upper layer of twin polishing, thickness is 1um, and with baking oven 100 ℃ of temperature baking 15 minutes, photoresist adopts AZ1500 type photoresist to make.Be placed on the photoresist with differential electrode 2, a movable electrode 4 mask that go between, contraposition exposed for 10 seconds on the rotine exposure machine, being put into Tetramethylammonium hydroxide again equals than water to develop 10 to 60 seconds in 1: 3 the developer solution, on photoresist, obtain the graphic structure of differential electrode 2, movable electrode lead-in wire 4, expose glass substrate 1 surface, adopt go between 4 graphic structures 1 minute of commercially available hydrofluorite corrosive liquid corrosion differential electrode 2, movable electrode, form shallow slot structure.On glass substrate 1, cover chromium, platinum, gold metal layer with commercially available general magnetron sputtering apparatus, adopt commercially available ultrasonic generator stripping technology, peel off differential electrode 2, movable electrode go between photoresist beyond 4 graphic structures and the metal level on the photoresist, form differential electrode 2, movable electrode 4 structures that go between.
On silicon chip 9, adopt photoetching process to form silicon bench 5 graphic structures, embodiment adopts and be coated with the commercially available AZ1500 photoresist of one deck on silicon chip 9, thickness is 2um, and with baking oven 100 ℃ of temperature baking 15 minutes, be placed on the photoresist with silicon bench 5 mask, contraposition exposed for 10 seconds on the rotine exposure machine, was put into Tetramethylammonium hydroxide again and equaled than water to develop 10 to 60 seconds in 1: 3 the developer solution, and silicon bench 5 graphic structures develop on the photoresist.Adopt commercially available reactive plasma etching apparatus to etch silicon bench 5 graphic structures, adopt commercially available sulfuric acid corrosion corrosion to fall remaining photoresist, expose silicon bench 5 structures.On silicon chip 9, adopt commercially available general magnetron sputtering apparatus to cover chromium, platinum, gold metal layer.Adopt photoetching process to form movable electrode 3 graphic structures, embodiment is coated with one deck AZ1500 photoresist on chromium, platinum, gold metal layer, thickness is 2um, and with baking oven 100 ℃ of temperature baking 15 minutes, be placed on the photoresist with movable electrode 3 mask, contraposition exposed for 10 seconds on the rotine exposure machine, was put into Tetramethylammonium hydroxide again and equaled than water to develop 10 to 60 seconds in 1: 3 the developer solution, and movable electrode 3 graphic structures develop on the photoresist.With commercially available chromium gold corrosive liquid corrosion movable electrode 3 graphic structures, embodiment etching time 30 seconds forms movable electrode 3 structures.On silicon chip 9, adopt photoetching process to form movable silicon chip 6, fixedly silicon chip 7, semi-girder 8 graphic structures, embodiment photoetching process on silicon chip 9 adopts commercially available AZ1500 photoresist, thickness is 2um, and with baking oven 100 ℃ of temperature baking 15 minutes, with a movable silicon chip 6, fixedly silicon chip 7, semi-girder 8 graphic structure mask are placed on the photoresist, contraposition exposed for 20 seconds on the rotine exposure machine, be put into Tetramethylammonium hydroxide again and equal 10 to the 60 seconds contraposition exposure imagings that develop in 1: 3 the developer solution than water, movable silicon chip 6 develops on the photoresist, fixedly silicon chip 7, semi-girder 8 graphic structures.With the movable silicon chip 6 of inductively coupled plasma etching method etching, fixedly silicon chip 7, semi-girder 8 graphic structures, embodiment adopts the commercially available movable silicon chip 6 of inductively coupled plasma equipment etching, fixedly silicon chip 7, semi-girder 8 graphic structures, etching depth is 60um, fall remaining photoresist with commercially available sulfuric acid corrosion corrosion, form movable silicon chip 6, fixedly silicon chip 7, semi-girder 8 structures.
On commercially available general bonding apparatus, the mutual contraposition of one side of exposing differential electrode 2, movable electrode lead-in wire 4 on the one side of the silicon bench on the silicon chip 95 and the glass substrate 1, be bonded to the silex glass bonding pad, form the differential variable capacitor structure that changes the area mode between differential electrode 2 and the movable electrode 3.Embodiment adopts the silex glass bonding pad commercially available general medium scribing machine in glass substrate 1 outer scribing, and it is the film trap of 150um that scribing forms the degree of depth, uses commercially available general silicon chip wafer lapping machine silicon chip 9 outer abrasive discs, and abrasive disc is thinned to 200um.The silex glass bonding pad is put into silicon anisotropic etching liquid wet etching, and embodiment corroded 2 to 4 hours, formed movable silicon chip 6, fixedly silicon chip 7, semi-girder 8 hanging structures.Embodiment manually breaks sheet off with the fingers and thumb to the glass substrate on the silex glass bonding pad 1, forms single grid type high shock acceleration mete tube core, and tube core is bonded on the accelerometer shell with insulating gel.Differential electrode 2, movable electrode lead-in wire 4 usefulness spun golds are connected with the pin of shell, embodiment adopts commercially available general ultrasonic bond platform with spun gold the metal level of differential electrode 2, movable electrode lead-in wire 4 to be connected with the pin of shell, sealing cap, the grid type high shock acceleration mete of cost of manufacture invention silex glass bonding.
Form to change the differential variable capacitor structure of area mode on the present invention's every movable electrode 3 and the glass substrate 1 between corresponding two differential electrodes 2, the differential change of the relative area of formation changes with acceleration change between movable electrode 3 and the corresponding differential electrode 2.Embodiment is made into 5 movable electrodes 3, every movable electrode 3 corresponding two differential electrodes 2 that constitute a group, the relative area that forms between them becomes differential change, and the relative area between the differential electrode 2 that two formations of every movable electrode 3 correspondences are a group is greater than 80um
2
Concise and to the point principle of work of the present invention is as follows: when the grid type high shock acceleration mete of silex glass bonding responsive to sensitive axes to acceleration change the time, be suspended on movable silicon chip 6 on the semi-girder 8 and have the variation of displacement, following movable electrode 3 is along with the change of occurrence positions, produce the variation of electric capacity between the differential electrode 2 on movable electrode 3 and the glass substrate 1 owing to the change of relative area, derive the variation of signal by movable electrode lead-in wire 4, adopt the open loop testing circuit, directly detect the variation of acceleration, reach the purpose that sense acceleration changes.
Claims (2)
1, a kind of grid type high shock acceleration mete of silex glass bonding, it comprises glass substrate (1), movable electrode lead-in wire (4), silicon bench (5), fixing silicon chip (7), silicon chip (9), it is characterized in that also comprising differential electrode (2), movable electrode (3), movable silicon chip (6), semi-girder (8), wherein going up in glass substrate (1) adopts photoetching process to form differential electrode (2), movable electrode lead-in wire (4) graphic structure, adopt hydrofluorite corrosive liquid corrosion differential electrode (2), movable electrode lead-in wire (4) graphic structure forms shallow slot structure, go up magnetron sputtering in glass substrate (1) and cover chromium, platinum, gold metal layer, adopt stripping technology to peel off differential electrode (2), metal level beyond movable electrode lead-in wire (4) graphic structure forms differential electrode (2), movable electrode lead-in wire (4) structure; Go up the employing photoetching process at silicon chip (9) and form silicon bench (5) graphic structure, adopt reactive plasma etching method etching silicon chip (9), be etched into silicon bench (5) structure on the silicon chip (9), go up magnetron sputtering at silicon chip (9) and cover chromium, platinum, gold metal layer, adopt photoetching process to form movable electrode (3) graphic structure, with chromium gold corrosive liquid corrosion movable electrode (3) graphic structure, form movable electrode (3) structure; Go up to adopt photoetching process to form movable silicon chip (6), fixedly silicon chip (7), semi-girder (8) graphic structure at silicon chip (9), with the movable silicon chip of inductively coupled plasma etching method etching (6), fixedly silicon chip (7), semi-girder (8) graphic structure, form movable silicon chip (6), fixedly silicon chip (7), semi-girder (8) structure; The mutual contraposition of one side of exposing differential electrode (2), movable electrode lead-in wire (4) on the one side that silicon chip (9) is gone up silicon bench (5) and the glass substrate (1), be bonded to the silex glass bonding pad, form the differential variable capacitor structure that changes the area mode between differential electrode (2) and the movable electrode (3); The silex glass bonding pad is put into silicon anisotropic etching liquid wet etching, form movable silicon chip (6), fixedly silicon chip (7), semi-girder (8) hanging structure; Differential electrode (2), movable electrode lead-in wire (4) is connected with the pin of shell with spun gold, and sealing cap is made the grid type high shock acceleration mete of silex glass bonding.
2, the grid type high shock acceleration mete of silex glass bonding according to claim 1, it is characterized in that between every movable electrode (3) and last corresponding two differential electrodes of glass substrate (1) (2) forming the differential variable capacitor structure that changes the area mode, the differential change of the relative area of formation changes with acceleration change between movable electrode (3) and the corresponding differential electrode (2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100123563A CN1318851C (en) | 2004-06-22 | 2004-06-22 | Silex glass bonded grid-type high shock acceleration meter |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100123563A CN1318851C (en) | 2004-06-22 | 2004-06-22 | Silex glass bonded grid-type high shock acceleration meter |
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| CN1595173A CN1595173A (en) | 2005-03-16 |
| CN1318851C true CN1318851C (en) | 2007-05-30 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB2004100123563A Active CN1318851C (en) | 2004-06-22 | 2004-06-22 | Silex glass bonded grid-type high shock acceleration meter |
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100435272C (en) * | 2005-07-01 | 2008-11-19 | 北京大学 | Method for protecting etched structure in induction coupling plasma etching |
| CN102778586B (en) * | 2012-08-13 | 2014-03-12 | 中国科学院上海微系统与信息技术研究所 | Differential capacitive micro-acceleration transducer and manufacturing method thereof |
| CN103809873B (en) * | 2012-11-13 | 2018-02-27 | 联想(北京)有限公司 | A kind of information processing method and input equipment |
| CN103901228B (en) * | 2014-04-08 | 2017-01-04 | 清华大学 | A kind of accelerometer |
| CN105277733B (en) * | 2014-06-27 | 2018-06-08 | 广芯电子技术（上海）股份有限公司 | The silicon capping structure of MEMS acceleration transducers |
| CN110670126B (en) * | 2019-09-30 | 2021-03-23 | 长沙新材料产业研究院有限公司 | Diamond with cantilever structure and preparation method thereof |
Citations (7)
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|---|---|---|---|---|
| EP0742439A1 (en) * | 1995-05-11 | 1996-11-13 | C.S.E.M. Centre Suisse D'electronique Et De Microtechnique Sa | Miniature capacitive acceleration sensor |
| US6153917A (en) * | 1998-03-16 | 2000-11-28 | Akebono Brake Industry Co., Ltd. | Semiconductor acceleration sensor and manufacturing method thereof |
| JP2001337105A (en) * | 2000-05-26 | 2001-12-07 | Matsushita Electric Works Ltd | Semiconductor acceleration sensor |
| CN1402011A (en) * | 2002-04-12 | 2003-03-12 | 中国科学院上海微系统与信息技术研究所 | Manufacture of micromachine capacitive acceleration sensor by wet corrosion, and structure thereof |
| CN1439598A (en) * | 2003-03-21 | 2003-09-03 | 中国电子科技集团公司第十三研究所 | Dry deeply etching silicone wafer manufacture |
| CN1494170A (en) * | 2002-08-07 | 2004-05-05 | ��ʽ�����װ | Capacitive momentum sensor |
| US20040107775A1 (en) * | 2002-12-10 | 2004-06-10 | Kim Kyoung Soo | Method and apparatus for uniformizing output signal levels of micro-electro mechanical systems (MEMS) capacitive sensors |
-
2004
- 2004-06-22 CN CNB2004100123563A patent/CN1318851C/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0742439A1 (en) * | 1995-05-11 | 1996-11-13 | C.S.E.M. Centre Suisse D'electronique Et De Microtechnique Sa | Miniature capacitive acceleration sensor |
| US6153917A (en) * | 1998-03-16 | 2000-11-28 | Akebono Brake Industry Co., Ltd. | Semiconductor acceleration sensor and manufacturing method thereof |
| JP2001337105A (en) * | 2000-05-26 | 2001-12-07 | Matsushita Electric Works Ltd | Semiconductor acceleration sensor |
| CN1402011A (en) * | 2002-04-12 | 2003-03-12 | 中国科学院上海微系统与信息技术研究所 | Manufacture of micromachine capacitive acceleration sensor by wet corrosion, and structure thereof |
| CN1494170A (en) * | 2002-08-07 | 2004-05-05 | ��ʽ�����װ | Capacitive momentum sensor |
| US20040107775A1 (en) * | 2002-12-10 | 2004-06-10 | Kim Kyoung Soo | Method and apparatus for uniformizing output signal levels of micro-electro mechanical systems (MEMS) capacitive sensors |
| CN1439598A (en) * | 2003-03-21 | 2003-09-03 | 中国电子科技集团公司第十三研究所 | Dry deeply etching silicone wafer manufacture |
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