CN1319035C - Pixel arrangement of active matrix form display - Google Patents
Pixel arrangement of active matrix form display Download PDFInfo
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- CN1319035C CN1319035C CNB031044751A CN03104475A CN1319035C CN 1319035 C CN1319035 C CN 1319035C CN B031044751 A CNB031044751 A CN B031044751A CN 03104475 A CN03104475 A CN 03104475A CN 1319035 C CN1319035 C CN 1319035C
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- active
- voltage source
- film transistor
- light
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Abstract
The present invention relates to a pixel structure of an active matrix type display, which comprises a storage capacitor, a first active element, and a plurality of active light emitting elements, wherein the first end of the first active element is connected with a scan line, the second end of the first active element is connected with a data line, and the third end of the first active element is connected with the storage capacitor; the active light emitting elements are coupled among a first voltage source, a second voltage source and the third end of the first active element in a parallel connection mode.
Description
Technical field
The invention relates to a kind of pixel driving device of active-matrix formula display, particularly a kind of organic light emitting display (organic light emitting diode, pixel driving device OLED).
Background technology
Because organic light emitting diode has power saving, the restriction of no visual angle, low cost of manufacture, fast, the exercisable temperature range of reaction velocity greatly and can be with advantages such as hardware miniaturization and slimmings.Therefore, organic light emitting diode has great development potentiality in the system of flat-panel screens, is expected to become next flat-panel screens from generation to generation.
Please refer to Fig. 1, Fig. 1 is the synoptic diagram of known organic light emitting display 10.Organic light emitting display 10 comprises display panel (display panel) 12, scan line drive circuit 14 and data line drive circuit 16.Wherein, display panel 12 is provided with multi-strip scanning line (scanning line) 18 (that is: SL1～SL
m), many data lines (data line) 20 (that is: DL perpendicular to sweep trace 18
1～DL
n), and a plurality of pixel 22 that is coupled in sweep trace 18 and data line 20.Generally speaking, scan line drive circuit 14 and data line drive circuit 16 meeting difference input signals are formed image so that each pixel 22 presents different gray scales according to image data to sweep trace 18 and data line 20.
Please refer to Fig. 2, Fig. 2 is the circuit diagram of pixel 22 shown in Figure 1.As shown in Figure 2, pixel 22 includes thin film transistor (TFT) 24 and 26, memory capacitance 28 and organic light emitting diode 30.Wherein, the grid 24a of thin film transistor (TFT) 24 and drain electrode 24b are coupled in sweep trace 18 and data line 20 respectively, the grid 26a of thin film transistor (TFT) 26 is coupled in the source electrode 24c of thin film transistor (TFT) 24 and an end of storage capacitors 28, and the source electrode 26c of thin film transistor (TFT) 26 is coupled to external power source V respectively with drain electrode 26b
DdWith anode (anode) 30a of organic light emitting diode 30, and the negative electrode of organic light emitting diode 30 (cathode) 30b ground connection.
Generally speaking, in operation during each pixel 22, scan line drive circuit 14 can be imported the grid 24a of thin film transistor (TFT) 24 with sweep signal via sweep trace 18, so that thin film transistor (TFT) 24 is in conducting state.Then, data line drive circuit 16 is understood via the drain electrode 24b of data line 20 with the data-signal input thin film transistor (TFT) 24 of a correspondence, so that thin film transistor (TFT) 26 is in conducting state, at this moment, external power source V
DdCan provide drive current to organic light emitting diode 30 via thin film transistor (TFT) 26,, and produce the light of different gray-scale intensities according to the drive current size of being passed through so that organic light emitting diode 30 produces corresponding brightness.
Please refer to Fig. 3 and Fig. 4, Fig. 3 is the diagrammatic cross-section of organic light emitting diode 30 shown in Figure 2, and Fig. 4 is the top view of organic light emitting diode 30 shown in Figure 3.As shown in Figure 3, organic light emitting diode 30 consists predominantly of glass substrate 32, transparency conducting layer 34 is located at glass substrate 32 surfaces, be used for regarding the anode 30a of organic light emitting diode 30, THIN COMPOSITE rete 36 is located at the surface of transparency conducting layer 34, and metal level 38 is located at THIN COMPOSITE rete 36 surfaces, is used for negative electrode as organic light emitting diode 30.Wherein, THIN COMPOSITE rete 36 is made of hole-conductive layer (hole transporting layer) 36a, luminescent layer (light emitting layer) 36b and electronic conductive layer (electron transportinglayer) 36c.Transparency conducting layer 34 includes tin indium oxide, and (indium tin oxide, ITO) or tin indium oxide materials such as (IZO), and metal level 38 includes low-impedance metal or alloy, for example magnesium, aluminum metal or lithium/silver alloy etc.
Be noted that, because manufacturing tolerance or other factors, metal level 38 forms sometimes with transparency conducting layer 34 and a little contacts, and the generation short circuit, for example: metal level 38 produces prominent point (spike) and penetrates THIN COMPOSITE rete 36, and touch transparency conducting layer 34 (the A point of Fig. 3), or transparency conducting layer 34 is because of uneven contact with metal level 38 (the B point of Fig. 3).As shown in Figure 3, because the resistance value that A point and B are ordered is about thousands of Europe mothers (K Ω), and the resistance value of organic light emitting diode 30 is about millions of Europe mothers (M Ω), therefore most drive current will be by A point and B point, and make the organic light emitting diode 30 can't be normally luminous, thereby become the bad point (defect) on the organic light emitting display 10.
As shown in Figure 4, for solving foregoing problems, known is to utilize laser to cut off A point and B point, just utilizes laser to cut off the linking portion of A, B point and organic light emitting diode 30.But, laser but may cause the metal level 38 around A, the B point to contact with transparency conducting layer 34, causes short circuit, and the bad point on can't Efficient software patching organic light emitting display 10.On the other hand, known method for repairing and mending must be found out bad point via operator, and then utilizes laser to repair bad point seriatim, not only labor intensive and time, does not meet economic benefit especially.
Summary of the invention
The pixel driving device that the purpose of this invention is to provide a kind of active-matrix formula display is to solve foregoing problems.
According to purpose of the present invention, preferred embodiment of the present invention provides a kind of pixel driving device of active-matrix formula display, this active-matrix formula display includes first voltage source (source of firstpotential) and second voltage source (source of second potential), and this dot structure includes memory capacitance, first active member, and a plurality of active illuminating elements, wherein this first active member has first end and is coupled in sweep trace, second end is coupled in data line, be coupled in this storage capacitors with the 3rd end, and these active illuminating elements are to be coupled in this first voltage source in parallel, this second voltage source, and between the 3rd end, wherein respectively this active illuminating element all respectively includes: second active member, and it has the 4th end and is connected in the 3rd end, five terminal is connected in this first voltage source, with the 6th end; And light-emitting component, it has, and the 7th end is connected in the 6th end and the 8th end is connected in this second voltage source.
According to purpose of the present invention, the present invention also provides a kind of active-matrix formula display, and it includes: the multi-strip scanning line; Many data lines; A plurality of pixels, and respectively this pixel all includes: memory capacitance; First active member, it has, and first end connects corresponding sweep trace, second end connects corresponding data line, is connected storage capacitors with the 3rd end; And a plurality of active illuminating elements, this active illuminating element be coupled in parallel first voltage source, second voltage source, and the 3rd end between, and respectively this active illuminating element all respectively includes: light-emitting component, it is to be coupled to this second voltage source; And second active member, it has, and the 4th end is coupled in the 3rd end, five terminal is coupled to this first voltage source, is coupled to this light-emitting component with the 6th end.
Because pixel of the present invention is the active illuminating element that includes a plurality of parallel connections, and respectively this active illuminating element is to include light-emitting component and active member, is used to provide drive current and gives this light-emitting component, so that this light-emitting component produces corresponding brightness.In this pixel one of them (or a plurality of) is when light-emitting component is short-circuited, and this pixel is to produce light via other light-emitting component, so can save the step of utilizing the bad point of laser preparing, saving process time, and then can promote the product yield.
Description of drawings
Fig. 1 is the synoptic diagram of known organic light emitting display 10.
Fig. 2 is the circuit diagram of pixel 22 shown in Figure 1.
Fig. 3 is the diagrammatic cross-section of organic light emitting diode 30 shown in Figure 2.
Fig. 4 is the top view of organic light emitting diode 30 shown in Figure 4.
Fig. 5 is the synoptic diagram of active-matrix formula display 40 of the present invention.
Fig. 6 is the circuit diagram of pixel 52 shown in Figure 5.
The drawing reference numeral explanation
10 organic light emitting display, 12 display panels
14 scan line drive circuits, 16 data line drive circuits
18 sweep traces, 20 data lines
22 pixels, 24 thin film transistor (TFT)s
24a grid 24b drain electrode
24c source electrode 26 thin film transistor (TFT)s
26a grid 26b drain electrode
26c source electrode 28 storage capacitors
30 organic light emitting diode 30a anodes
30b negative electrode 32 glass substrates
34 transparency conducting layers, 36 THIN COMPOSITE retes
36a hole-conductive layer 36b luminescent layer
36c electronic conductive layer 38 metal levels
40 organic light emitting display, 42 display panels
44 scan line drive circuits, 46 data line drive circuits
48 sweep traces, 50 data lines
52 pixels, 54 storage capacitors
56 thin film transistor (TFT) 56a grids
58 active illuminating elements, 60 thin film transistor (TFT)s
64 voltage sources, 66 voltage sources
Embodiment
Please refer to Fig. 5, Fig. 5 is the synoptic diagram of active-matrix formula display 40 of the present invention.Active-matrix formula display 40 comprises display panel 42, scan line drive circuit 44 and data line drive circuit 46.Wherein, display panel 42 is provided with multi-strip scanning line 48 (that is: SL
1～SL
m), many data lines 50 (that is: DL perpendicular to sweep trace 48
1～DL
n), and a plurality of pixel 52 that is coupled in sweep trace 48 and data line 50.Generally speaking, scan line drive circuit 44 and data line drive circuit 46 meeting difference input signals are formed image so that each pixel 52 can present different gray scales according to image data to sweep trace 48 and data line 50.
Please refer to Fig. 6, Fig. 6 is the circuit diagram of pixel 52 shown in Figure 5.As shown in Figure 6, pixel 52 includes memory capacitance 54, active member 56 and a plurality of active illuminating element 58.Wherein, each active illuminating element 58 all is to include active member 60 (T
1, T
2, T
3Or T
4) and light-emitting component 62 (D
1, D
2, D
3Or D
4), and each active illuminating element 58 is to be coupled in voltage source 64, voltage source 66 in parallel, and between the end points 54a of storage capacitors 54.In addition, voltage source 64 is to be used to provide voltage V
1, voltage source 66 then is to be used to provide voltage V
2, generally speaking, voltage V
2Be reference voltage (for example: ground connection), and voltage V
1Normally greater than voltage V
2And active member 56 is to include thin film transistor (TFT) or CMOS (Complementary Metal Oxide Semiconductor) transistor with each active member 60, light-emitting component 62 then include organic light emitting diode or light-emittingdiode (light emitting diode, LED).
In most preferred embodiment of the present invention, active-matrix formula display 40 is organic light emitting display, therefore, active member 56 is thin film transistor (TFT)s, and thin film transistor (TFT) 56 includes, and grid 56a is coupled in sweep trace 48, drain electrode 56b is coupled in the end points 54a that data line 50 and source electrode 56c are coupled in storage capacitors 54.In addition, each active member 60 all is thin film transistor (TFT)s, and each light-emitting component 62 then all is organic light emitting diodes.And, each thin film transistor (TFT) 60 all has source electrode 56c, source electrode 60c that a grid 60a is coupled to thin film transistor (TFT) 56 and is coupled to the anode 62a that voltage source 64 and drain electrode 60b are coupled to organic light emitting diode 62, and the negative electrode 62b that utmost point light-emittingdiode 62 is arranged is coupled in voltage source 66.On the other hand, the end points 54b of storage capacitors 54 is coupled in voltage source 64, but in other embodiments of the invention, the end points 54b of storage capacitors 54 also can be coupled in the voltage source that any one can provide fixed voltage.
Moreover the method for operating of each pixel 52 inside is to be described as follows.At first, scan line drive circuit 44 can be imported the grid 56a of thin film transistor (TFT) 56 with sweep signal via sweep trace 48, so that thin film transistor (TFT) 56 is in conducting state.Then, data line drive circuit 50 can be via the drain electrode 56b of data line 50 with the data-signal input thin film transistor (TFT) 56 of a correspondence, so that each thin film transistor (TFT) 60 is in conducting state, charge simultaneously and to storage capacitors 54, make storage capacitors 54 have first voltage.Because this moment, each thin film transistor (TFT) 60 all can be in conducting state, so voltage source 64 can provide drive current to each organic light emitting diode 62 via each thin film transistor (TFT) 60, so that each organic light emitting diode 62 produces corresponding brightness.And when thin film transistor (TFT) 56 cuts out, storage capacitors 54 still has this first voltage, so that each thin film transistor (TFT) 60 maintains conducting state, and provide drive current sustainably to each organic light emitting diode 62, so that respectively there is utmost point light-emittingdiode 62 can maintain luminance.
It should be noted that and (for example: D work as one of them organic light emitting diode 62
1) anode 62a and negative electrode 62b because manufacturing tolerance or other factors, and when producing short circuit, thin film transistor (TFT) T then
1The drive current that is provided can't make organic light emitting diode D luminous.But, as shown in Figure 6, owing to include the active illuminating element 58 of four parallel connections in the pixel 52, so other thin film transistor (TFT) T
2, T
3With T
4Still can provide drive current to organic light emitting diode D
2, D
3With D
4, so organic light emitting diode D
2, D
3With D
4Still can continue luminous so that pixel 52 maintains luminance.In other words,,, thus, not only can save the step of utilizing the bad point of laser preparing, more can promote the yield of product just can normally produce light as long as any pixel 52 has at least one good organic light emitting diode 62.
In brief, the present invention is the active illuminating element that forms a plurality of parallel connections in pixel, respectively this active illuminating element is to include organic light emitting diode (or light-emittingdiode) and thin film transistor (TFT) (or CMOS (Complementary Metal Oxide Semiconductor) transistor), be used to provide drive current and give this organic light emitting diode, so that this organic light emitting diode produces corresponding brightness.In addition, the quantity of active illuminating element is that the size according to this pixel decides, and in theory, the quantity of active illuminating element is many more, and then when the organic light emitting diode in this pixel produced short circuit, the gray scale of this pixel was difficult for being affected more.On the other hand, the circuit design in the pixel of the present invention is not limited to shown in Figure 6, that is thin film transistor (TFT) 56 is to adjust according to actual needs with the quantity and the configuration of storage capacitors 54.
Compared to known technology, because pixel of the present invention is the light-emitting component that includes a plurality of parallel connections, and respectively this light-emitting component is all connected with active member, and respectively this active member is to be used to provide drive current to give respectively this light-emitting component.Therefore, one of them in this pixel (or a plurality of) is when light-emitting component is short-circuited, and interior other the good light-emitting component of this pixel still can continue luminous, so that this pixel can normally operate.Thus, not only can save the step of utilizing the bad point of laser preparing, save process time, and then can promote the product yield.
The above only is preferred embodiment of the present invention, and all claim is done according to the present invention equal variation and modification all belong to the covering scope of patent of the present invention.
Claims (17)
1. the pixel driving device of an active-matrix formula display, this active-matrix formula display includes first voltage source and second voltage source, and this pixel driving device includes: memory capacitance; First active member, its first end are coupled in sweep trace, second end is coupled in data line, is connected in this storage capacitors with the 3rd end; And a plurality of active illuminating elements, and this active illuminating element be coupled in parallel this first voltage source, this second voltage source, and the 3rd end between,
It is characterized in that wherein respectively this active illuminating element all respectively includes:
Second active member, its have the 4th end be connected in the 3rd end, five terminal be connected in this first voltage source, with the 6th end; And
Light-emitting component, it has, and the 7th end is connected in the 6th end and the 8th end is connected in this second voltage source.
2. pixel driving device as claimed in claim 1, wherein this first active member is the first film transistor, and this first end is the transistorized grid of this first film, and this second end is this first film transistor drain, and the 3rd end is the transistorized source electrode of this first film.
3. pixel driving device as claimed in claim 1, wherein this storage capacitors is to be coupled between the 3rd end and the fixed voltage source, and this fixed voltage source is to be used to provide fixing voltage.
4. pixel driving device as claimed in claim 3, wherein this fixed voltage source is this first voltage source.
5. pixel driving device as claimed in claim 1, wherein when one of them of this light-emitting component was short-circuited phenomenon, this dot structure was to come display frame by other respectively this light-emitting component.
6. pixel driving device as claimed in claim 1, wherein respectively this second active member is to include second thin film transistor (TFT) or CMOS (Complementary Metal Oxide Semiconductor) transistor.
7. pixel driving device as claimed in claim 6, wherein the 4th end is the grid of this second thin film transistor (TFT), this five terminal is the source electrode of this second thin film transistor (TFT), and the 6th end is the drain electrode of this second thin film transistor (TFT).
8. pixel driving device as claimed in claim 1, wherein respectively this light-emitting component is to include organic light emitting diode or light-emittingdiode.
9. pixel driving device as claimed in claim 8, wherein the 7th end is the anode that is used for being used as this light-emitting component, and the 8th end is the negative electrode that is used for being used as this light-emitting component.
10. active-matrix formula display, it includes: the multi-strip scanning line; Many data lines; A plurality of pixels, and respectively this pixel all includes: memory capacitance; First active member, it has, and first end connects corresponding sweep trace, second end connects corresponding data line, is connected storage capacitors with the 3rd end; And a plurality of active illuminating elements, this active illuminating element be coupled in parallel first voltage source, second voltage source, and the 3rd end between,
It is characterized in that respectively this active illuminating element all respectively includes:
Light-emitting component, it is to be coupled to this second voltage source; And
Second active member, it has, and the 4th end is coupled in the 3rd end, five terminal is coupled to this first voltage source, is coupled to this light-emitting component with the 6th end.
11. active-matrix formula display as claim 10, wherein this first active member is the first film transistor, and this first end is the transistorized grid of this first film, and this second end is this first film transistor drain, and the 3rd end is the transistorized source electrode of this first film.
12. as the active-matrix formula display of claim 10, wherein this storage capacitors is to be coupled between the 3rd end and the fixed voltage source, and this fixed voltage source is to be used to provide fixing voltage.
13. as the active-matrix formula display of claim 12, wherein this fixed voltage source is this first voltage source.
14. as the active-matrix formula display of claim 10, wherein respectively this second active member is to include second thin film transistor (TFT) or CMOS (Complementary Metal Oxide Semiconductor) transistor.
15. as the active-matrix formula display of claim 10, wherein the 4th end is the grid of this second thin film transistor (TFT), this five terminal is the source electrode of this second thin film transistor (TFT), and the 6th end is the drain electrode of this second thin film transistor (TFT).
16. as the active-matrix formula display of claim 10, wherein respectively this light-emitting component is to include organic light emitting diode or light-emittingdiode.
17. as the active-matrix formula display of claim 10, wherein when one of them light-emitting component in the pixel was short-circuited phenomenon, this pixel was to come display frame by other these light-emitting components in this pixel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031044751A CN1319035C (en) | 2003-02-17 | 2003-02-17 | Pixel arrangement of active matrix form display |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031044751A CN1319035C (en) | 2003-02-17 | 2003-02-17 | Pixel arrangement of active matrix form display |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1523552A CN1523552A (en) | 2004-08-25 |
| CN1319035C true CN1319035C (en) | 2007-05-30 |
Family
ID=34282228
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB031044751A Expired - Lifetime CN1319035C (en) | 2003-02-17 | 2003-02-17 | Pixel arrangement of active matrix form display |
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| CN (1) | CN1319035C (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4580775B2 (en) * | 2005-02-14 | 2010-11-17 | 株式会社 日立ディスプレイズ | Display device and driving method thereof |
| CN105679241B (en) * | 2016-03-31 | 2019-05-17 | 昆山工研院新型平板显示技术中心有限公司 | Pixel circuit and its application |
| CN107248391A (en) * | 2017-06-27 | 2017-10-13 | 京东方科技集团股份有限公司 | Display panel and preparation method thereof, method for maintaining and display device |
| TWI708234B (en) * | 2018-12-25 | 2020-10-21 | 友達光電股份有限公司 | Display device and driving method thereof |
| CN110459164B (en) * | 2019-07-26 | 2020-12-08 | 深圳市华星光电半导体显示技术有限公司 | Pixel driving circuit and display device |
| CN112634818B (en) * | 2020-12-23 | 2022-07-29 | 京东方科技集团股份有限公司 | Pixel driving circuit, driving method and display device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5748160A (en) * | 1995-08-21 | 1998-05-05 | Mororola, Inc. | Active driven LED matrices |
| US5903246A (en) * | 1997-04-04 | 1999-05-11 | Sarnoff Corporation | Circuit and method for driving an organic light emitting diode (O-LED) display |
| CN1345021A (en) * | 2000-09-20 | 2002-04-17 | 精工爱普生株式会社 | Drive electronic device and drive method for active matrix display |
-
2003
- 2003-02-17 CN CNB031044751A patent/CN1319035C/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5748160A (en) * | 1995-08-21 | 1998-05-05 | Mororola, Inc. | Active driven LED matrices |
| US5903246A (en) * | 1997-04-04 | 1999-05-11 | Sarnoff Corporation | Circuit and method for driving an organic light emitting diode (O-LED) display |
| CN1345021A (en) * | 2000-09-20 | 2002-04-17 | 精工爱普生株式会社 | Drive electronic device and drive method for active matrix display |
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| Publication number | Publication date |
|---|---|
| CN1523552A (en) | 2004-08-25 |
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