CN1385899A - 半导体器件 - Google Patents
半导体器件 Download PDFInfo
- Publication number
- CN1385899A CN1385899A CN01132999A CN01132999A CN1385899A CN 1385899 A CN1385899 A CN 1385899A CN 01132999 A CN01132999 A CN 01132999A CN 01132999 A CN01132999 A CN 01132999A CN 1385899 A CN1385899 A CN 1385899A
- Authority
- CN
- China
- Prior art keywords
- resin
- film
- thin
- resin bed
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 89
- 239000010409 thin film Substances 0.000 claims abstract description 34
- 239000004973 liquid crystal related substance Substances 0.000 claims abstract description 25
- 239000011347 resin Substances 0.000 claims description 85
- 229920005989 resin Polymers 0.000 claims description 85
- 238000000034 method Methods 0.000 claims description 35
- 239000000463 material Substances 0.000 claims description 16
- 239000003990 capacitor Substances 0.000 claims description 15
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 13
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 11
- 150000002148 esters Chemical class 0.000 claims description 10
- BAPJBEWLBFYGME-UHFFFAOYSA-N Methyl acrylate Chemical class COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 claims description 7
- 239000004642 Polyimide Substances 0.000 claims description 7
- 229920001721 polyimide Polymers 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 229920005644 polyethylene terephthalate glycol copolymer Polymers 0.000 claims description 6
- FWWXYLGCHHIKNY-UHFFFAOYSA-N 2-ethoxyethyl prop-2-enoate Chemical group CCOCCOC(=O)C=C FWWXYLGCHHIKNY-UHFFFAOYSA-N 0.000 claims description 5
- JIGUQPWFLRLWPJ-UHFFFAOYSA-N Ethyl acrylate Chemical compound CCOC(=O)C=C JIGUQPWFLRLWPJ-UHFFFAOYSA-N 0.000 claims description 5
- 229920002873 Polyethylenimine Polymers 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- PNJWIWWMYCMZRO-UHFFFAOYSA-N pent‐4‐en‐2‐one Natural products CC(=O)CC=C PNJWIWWMYCMZRO-UHFFFAOYSA-N 0.000 claims description 5
- -1 polyethylene naphthalenedicarboxylate formic acid Chemical class 0.000 claims description 5
- CQEYYJKEWSMYFG-UHFFFAOYSA-N butyl acrylate Chemical compound CCCCOC(=O)C=C CQEYYJKEWSMYFG-UHFFFAOYSA-N 0.000 claims 4
- 239000013078 crystal Substances 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 59
- 239000010410 layer Substances 0.000 abstract description 30
- 239000011159 matrix material Substances 0.000 abstract description 13
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- 229920002799 BoPET Polymers 0.000 description 11
- 239000007789 gas Substances 0.000 description 10
- 238000007872 degassing Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 239000004411 aluminium Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 150000001398 aluminium Chemical class 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920006351 engineering plastic Polymers 0.000 description 1
- 239000005262 ferroelectric liquid crystals (FLCs) Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- AGGKEGLBGGJEBZ-UHFFFAOYSA-N tetramethylenedisulfotetramine Chemical compound C1N(S2(=O)=O)CN3S(=O)(=O)N1CN2C3 AGGKEGLBGGJEBZ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133305—Flexible substrates, e.g. plastics, organic film
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78636—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with supplementary region or layer for improving the flatness of the device
Abstract
一对形成有源矩阵液晶显示器的衬底,它们由具有柔韧性和透明性的树脂构成。一薄膜晶体管有一半导体层,该层形成于已形成在树脂衬底上的树脂薄膜上。形成该树脂层以阻止在薄膜的形成和使树脂衬底表面平面化过程中,在树脂衬底表面上产生齐聚物。
Description
发明领域
本发明一般涉及薄膜晶体管的结构,这种薄膜晶体管在如由工程塑料制成的树脂的柔韧(即有机械弹性)衬底上形成。本发明还涉及制造这种薄膜晶体管的方法。此外,本发明还涉及应用了这些薄膜晶体管所制造的有源矩阵液晶显示器。
发明背景
大家知道,薄膜晶体管一般在玻璃衬底或石英衬底上形成。以玻璃为衬底的薄膜晶体管主要用于有源矩阵液晶显示器。由于有源矩阵液晶显示器能够以高灵度、高信息量显示图像,所以有源矩阵液晶显示器将有望取代简单矩阵液晶显示器。
在有源矩阵液晶显示器中,每个象素都设置有作为开关单元的一个或多个薄膜晶体管。电荷进入和流出象素电极是由薄膜晶体管控制的。因为需要可见光穿过液晶显示器,所以采用玻璃或石英作衬底。
液晶显示器是一种预计会有十分广泛地应用前途的显示装置。例如:用作卡式计算机、 便携式计算机和作为各种远距离通信设备的便携式电子装置等的显示装置。在要处理采用更先进技术的信息时这些信息既需要在用作便携式电子装置的显示装置上显示出来。如:有一条显示较大量信息和移动的图象以及数码和符号的指令。
这里,由于要求液晶显示器具有显示大信息量和移动的图象的功能,所以很有必要采用有源矩阵液晶显示器。然而,由于衬底是玻璃或石英的,各种问题就产生了:(1)液晶显示器自身的减薄受到了限制;(2)重量增加;(3)如果试图在减少重量时减小厚度,则衬底会损坏;(4)衬底没有柔韧性。
尤其是对于卡式电子器件,为了在加工中有轻微的压力作用于器件时,器件不致于受损伤,需要有柔韧性。因此,与这些电子器件结合使用的液晶显示器,同样需要具有柔韧性。
发明目的
本发明在此提供一种具有柔韧性的有源矩阵液晶显示器。
一种赋与液晶显示器柔韧性的适当方法是,用透光的塑料或树脂的衬底。然而由于树脂衬底耐热性很差,要在其上形成薄膜晶体管在技术上是困难的。
发明概述
因此,这里所披露的发明,是通过采用下述结构来解决上述问题。
这里所披露的一个发明包括:一薄膜树脂衬底;一在所说树脂衬底的表面上形成的树脂层;和在所说树脂层上形成的薄膜晶体管。
图1表示了上述结构的一个具体例子。在图1所示的结构中,树脂层102与厚度为100μm的PET膜101接触,PET膜为一薄膜树脂衬底。在树脂层上形成颠倒交错排列的薄膜晶体管。
薄膜树脂衬底的材料可以从PET(聚对苯二甲酸乙二醇酯)、PEN(聚乙烯萘甲酸酯)、PES(聚乙烯亚硫酸酯)和聚酰亚胺中选择。必要的是要具备柔韧性和透明性。材料所能承受的温度应尽可能的高。如果加热温度升高约200℃,齐聚物(直径约1μm的聚合物)一般会沉积在表面,或会有气体产生。因此,要在树脂衬底上形成半导体层是很困难的。因而,所选材料应有最高的可能的处理温度。
在上述结构中,树脂层的作用是使树脂衬底表面平面化。平面化可以在如形成半导体层这样的加热步骤过程中防止齐聚物在树脂衬底表面上析出。
此树脂层材料可以从丙稀酸甲酯、丙烯酸乙酯、丙稀酸2-乙氧基乙酯中选择。这样,即使采用树脂衬底,这种树脂层也可以在上述薄膜晶体管制造过程中消除这些缺陷。
另一种发明的结构包括以下步骤:在薄膜树脂衬底上形成一树脂层;通过等离子体辅助CVD,在所说树脂基底上形成一半导体层;和用所说半导体层形成薄膜晶体管。
再一种发明的结构,包括以下步骤:为使所说树脂衬底脱气,在给定温度对薄膜树脂层进行热处理;在薄膜树脂衬底上形成一树脂层;通过等离子体辅助CVD,在所说树脂衬底上形成一半导体层;和使用半导体层形成薄膜晶体管。
在上述结构中,为了防止在包括加热工艺在内的后续工艺过程中,气体从树脂衬底中析出,对该衬底进行热处理使树脂衬底脱气。例如,当在树脂衬底上形成半导体薄膜时,如果有气体从该衬底放出,那么将会在半导体薄膜里形成大针孔。这会很严重地损害其电性能。因此,应在高于后续工艺中的加热温度,对衬底进行热处理,使树脂衬底脱气。以这种方法,将会抑制后续步骤中气体从树脂衬底放出。
又一种发明的结构,包括如下步骤:在给定温度对薄膜树脂衬底进行热处理;在所说薄膜树脂衬底上形成一树脂层;把衬底加热至低于所说给定温度时,运用等离子体辅助CVD,在所说树脂衬底上形成半导体层;和用所说半导体层形成薄膜晶体管。
又一种发明的结构包括以下步骤:在高于其它步骤中所用的任何热处理温度的给定温度下,对薄膜树脂衬底进行热处理;在所说薄膜树脂衬底上形成一树脂层;通过等离子体辅助CVD,在所说树脂衬底上形成一半导体层;用所说半导体层形成薄膜晶体管。
另有一种发明的结构,包括:一对薄膜树脂衬底;在所说树脂衬底之间设置液晶材料;在至少一个所说树脂衬底的表面上,形成象素电极;薄膜晶体管与所说的象素电极连接并形成在所说一树脂衬底上;和树脂层形成在所说的薄膜树脂衬底的表面上以便表面变平。
图3表示的是上述结构的一个具体实例。如图3所示,该结构包括:一对树脂衬底301,302,一置于这些树脂衬底之间的液晶材料309,象素电极306,薄膜晶体管(TFTS)305,它们与象素电极306相连,和一为使树脂衬底301的表面平面化而设置的树脂层303。
附图简述
图1(A)至1(E)表示的是本发明制造薄膜晶体管的一种工艺步骤。
图2(A)至2(C)表示的是本发明制造薄膜晶体管的另一种工艺的步骤。
图3是液晶屏板的示意性截面图。
优选实施例详细描述
实例1:
本例示出颠倒交错排列TETS,形成在有机树脂的PET(聚对苯二甲酸乙二醇酯)衬底上的一实例。
如图1(A)所示,首先制备厚度为100μm的PET膜101,并且对它进行热处理使之脱气。热处理的温度须高于在后续工艺中所用的最高温度。在本实例工艺中,由等离子体辅助CVD工艺形成非晶硅膜期间所用的温度为160℃,是最高加热温度。因此,为PET膜脱气的热处理温度定在180℃。
在PET膜101上形成丙烯树脂层102,如丙烯树脂可采用丙稀酸甲酯。这层丙稀树脂层102可以防止后续工艺中齐聚物的PET膜101的表面析出。丙稀树脂层102还可以使PET膜102的不平整的表面平面化。PET膜表面一般具有几百埃至1μm的不平整度。这样的不平整度会严重影响几百埃厚的半导体层的电性能。因此,使在其上形成半导体层的基片平面化是很重要的。
然后形成铝栅极103。通过用溅射法形成厚2000-5000埃(在下例中为3000埃)的铝膜并进行公知的使用光刻法的图形化步骤,形成栅极103。
之后,由溅射形成厚为1000A的SiO2膜用来作栅绝缘膜104。栅绝缘膜104也可以用氮化硅代替氧化硅。
接着,500A厚的真正的本征(I型)非晶硅膜105由等离子体辅助CVD形成,其工艺条件如下:
形成膜的温度(加热衬底的温度):160℃
反应压力: 0.5乇
射频(RF)功率(13.56MHz): 20mw/cm2
反应气体: SiH4
在这个例子中,采用平行板式等离子CVD设备形成薄膜。由设置在树脂衬底置于其中的衬底承载台内的加热器对衬底加热。以此方法可得到如图1(B)所示的状态。
然后,由溅射形成在后续步骤中用作刻蚀阻挡层的氧化硅膜,再通过图形化以形蚀刻阻挡层106。
其后,膜厚为300A的n型非晶硅膜107由平行板等离子体辅助CVD形成,工艺条件如下:
形成膜的温度(加热衬底的温度):160℃
反应压力: 0.5乇
射频(RF)功率(13.56MHz): 20mW/cm2
反应气体: B2H6/SiH4=1/100
由此可获得图1(C)所示状态。然后,通过干法腐蚀工艺在n型非晶硅膜107和真正的本征(I型)非晶硅膜105上形成图形。由溅射形成一个厚3000埃的铝膜。随后腐蚀该铝膜和下面的n型非晶硅膜107就形成了源极108和漏极109。在腐蚀过程中,由于腐蚀阻挡层106的存在,保证了源区和漏区之间的相互绝缘(如图1(D)所示。)
用除树脂外的材料形成厚为6000埃的层间介质层110,例如可用二氧化硅或聚酰亚胺。这里形成二氧化硅膜可以使用形成二氧化硅膜所用的液体。最后,形成接触孔并由270制造象素电极。这样,采用了透明树脂衬底(图1E)的薄膜晶体管就制造完成了,它们设置于有源矩阵液晶显示器的象素电极处。
实施例2
该实例是利用例1中所述的薄膜晶体管,来制造一有源矩阵液晶显示器。图3是本例的液晶电光器件的截面图。
如图3所示,厚度为100μm的PET膜301和302构成了一对衬底,一丙稀树脂层303充当平面化层,306为象素电极。在图3中仅示出与两个象素电极相对应的结构。
304为一反电极。定向膜307和308朝向液晶309,液晶309可以是扭转向列型(TN)液晶、超扭转向列型(STN)液晶或铁电液晶,一般采用TN液晶。液晶层的厚度大约为几微米到10微米。
薄膜晶体管(TFT)305与象素电极306相连。由TFT305控制电荷流入或流出象素电极306。在本例中,只取象素电极306中一个作为典型,但也形成所要求数量的相似结构的其它构型。
在图3所示的结构中,为了使整个液晶屏板具有柔韧性,衬底301和302应是柔韧的。
实例3:
本例是制造共平面的,用于有源矩阵液晶显示器的薄膜晶体管的方法。本例制造薄膜晶体管的工艺步骤如图2所示。首先,准备一PET膜201作为有机树脂薄膜衬底,其厚度为100μm。然后,在180℃对衬底进行热处理以促进PET膜201脱气。在该膜表面上形成一层丙稀树脂202。在本例中,丙稀树脂采用丙稀酸甲酯。
接着用等离子体辅助CVD工艺生长一真正的本征半导体层203,沟道区将在该层里形成,生长的条件如下:
形成薄膜的温度(加热衬底的温度):160℃
反应压力: 0.5乇
射频(RF)功率(13.56MHz): 20mW/cm2
反应气体: SiH4
本例采用平行板型等离子体CVD设备。
然后用平行板型等离子体CVD设备生长一厚为300A的n型非晶硅膜,生长条件如下:
形成膜的温度(加热衬底的温度):160℃
反应压力: 0.5乇
射频(RF)功率(13.56MHz) 20mW/cm2
反应气体: B2H6/SiH4=1/100
在n型非晶Si膜上形成源区205和漏区204图形。(图2(A)所示)。
采用溅射法形成用作栅绝膜的氧化硅膜或氮化硅膜,并图形化以在其上形成栅绝缘膜206。然后由铝形成栅极207(图2(B)所示)。
形成一厚度为5000埃的聚酰亚胺层208,用来充当层间介质膜。形成接触孔。用溅射法形成ITO电极209,该电极为象素电极,这样就完成了TET的制造(图2(c))。实例4:
除了半导体层是由微晶半导体膜构成之外,本例的结构与例1或例2类似。首先,生长一真正的本征半导体层作为微晶半导体层,生长条件如下:
形成膜的温度(加热衬底的温度):160℃
反应压力 0.5乇
射频(RF)功率(13.56MHz) 150mW/cm2
反应气体: SiH4/H2=1/30
在本例中,采用平行板型等离子(VI)设备生长膜。
同样采用平行板型等离子CVD设备,在下述条件下生长-n型微晶硅膜。
形成膜的温度(加热衬底的温度):160℃
反应压力: 0.5乇
射频(RF)功率(13.56MHz): 150mW/cm2
反应气体: B2H6/SiH4=1/100
微晶硅膜一般加100-200mW/cm2的功率便可获得。对于本征半导体层,通过以10到50的系数用氢气来稀释硅烷,并增加功率可获得所要求的结果。然而,如果进行氢气稀释,膜的生长速度会降低。
实例5:
本例涉及一种方法,包括用激光照射硅膜,该激光的功率不足以加热薄膜基片或衬底,所说的硅膜是用上述其它实例中所说的等离子体辅助CVD说形成的。
通过用激光(如:krF准分子激光器所发光)照射非晶硅膜,使生长在玻璃衬底上的非晶硅膜转变为晶体硅膜的方法已然公知。在另一种公知的方法中,将能产生一种导电类型的杂质离子注入到硅膜中,然后用激光照射该硅膜,以激活该硅膜和杂质离子。杂质离子的注入使硅膜非晶化。
对本例所述的结构采用上述激光照射工艺,其特征在于,使用微弱的激光照射图1所示的非晶硅膜105或图2所示的非晶硅膜203、204,使它们晶体化。如果先前形成的膜是微晶硅膜,则能改善其晶性。
可用krF或XeCl准分子激光器发射激光,所发射激光的能量为10-50mJ/cm2。重要的是,树脂衬底101或102不能被热损伤。利用本发明所公开的思想,有源矩阵液晶显示器的厚度是可以减小的,而且其重量也可以减轻。如果施加一个外力,衬底也不会破碎,这赋予显示器以柔韧性。
这种液晶显示器能有广泛的用途,是非常有用的。
Claims (18)
1.一种半导体器件,包括:
一个具有不平整表面的树脂衬底;
形成于所说的树脂衬底表面上的树脂层,用于使所述衬底的上表面平整;和
形成于所说树脂层上的薄膜晶体管。
2.一种半导体器件,包括:
一个具有不平整表面的树脂衬底;
形成于所说的树脂衬底表面上的树脂层,用于使所述衬底的上表面平整;和
形成于所说树脂层上的薄膜晶体管;
其中所述薄膜晶体管由晶体硅半导体层形成。
3.一种半导体器件,包括:
一个具有不平整表面的树脂衬底;
形成于所说的树脂衬底表面上的树脂层,用于使所述衬底的上表面平整;和
形成于所说树脂层上的薄膜晶体管;
其中所述薄膜晶体管由非晶硅半导体层形成。
4.一种半导体器件,包括:
一对具有不平整表面的树脂衬底;
位于所述树脂衬底之间的液晶材料;
形成在一个所述树脂衬底上的象素电极;
形成于所说的薄片树脂衬底表面上的树脂层,用于使所述树脂衬底的上表面平整;和
形成于所说树脂层上且与所述象素电极相连接的薄膜晶体管。
5.根据权利要求1的器件,其中所述衬底包括选自以下组中的材料:聚对苯二甲酸乙二醇酯、聚乙烯萘甲酸酯、聚乙烯亚硫酸酯和聚酰亚胺。
6.根据权利要求2的方法,其中所述衬底包括选自以下组中的材料:聚对苯二甲酸乙二醇酯、聚乙烯萘甲酸酯、聚乙烯亚硫酸酯和聚酰亚胺。
7.根据权利要求3的方法,其中所述衬底包括选自以下组中的材料:聚对苯二甲酸乙二醇酯、聚乙烯萘甲酸酯、聚乙烯亚硫酸酯和聚酰亚胺。
8.根据权利要求4的方法,其中所述衬底包括选自以下组中的材料:聚对苯二甲酸乙二醇酯、聚乙烯萘甲酸酯、聚乙烯亚硫酸酯和聚酰亚胺。
9.根据权利要求1的方法,其中所述树脂层包括选自以下组中的材料:丙稀酸甲酯、丙烯酸乙酯、丙烯酸丁酯和丙稀酸2-乙氧基乙酯。
10.根据权利要求2的方法,其中所述树脂层包括选自以下组中的材料:丙稀酸甲酯、丙烯酸乙酯、丙烯酸丁酯和丙稀酸2-乙氧基乙酯。
11.根据权利要求3的方法,其中所述树脂层包括选自以下组中的材料:丙稀酸甲酯、丙烯酸乙酯、丙烯酸丁酯和丙稀酸2-乙氧基乙酯。
12.根据权利要求4的方法,其中所述树脂层包括选自以下组中的材料:丙稀酸甲酯、丙烯酸乙酯、丙烯酸丁酯和丙稀酸2-乙氧基乙酯。
13.根据权利要求2的方法,其中所述半导体层的所述形成过程是由等离子体辅助CVD完成的。
14.根据权利要求3的方法,其中所述半导体层的所述形成过程是由等离子体辅助CVD完成的。
15.根据权利要求1的方法,其中所述半导体器件是柔韧的。
16.根据权利要求2的方法,其中所述半导体器件是柔韧的。
17.根据权利要求3的方法,其中所述半导体器件是柔韧的。
18.根据权利要求4的方法,其中所述半导体器件是柔韧的。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP339162/94 | 1994-12-27 | ||
JP339162/1994 | 1994-12-27 | ||
JP33916294A JP2900229B2 (ja) | 1994-12-27 | 1994-12-27 | 半導体装置およびその作製方法および電気光学装置 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN95119479A Division CN1083617C (zh) | 1994-12-27 | 1995-12-27 | 制造半导体器件的方法 |
Related Child Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100694502A Division CN100379024C (zh) | 1994-12-27 | 1995-12-27 | 半导体器件 |
CNB200410069449XA Division CN1333297C (zh) | 1994-12-27 | 1995-12-27 | 半导体器件 |
CNB2004100694485A Division CN1333296C (zh) | 1994-12-27 | 1995-12-27 | 半导体器件 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1385899A true CN1385899A (zh) | 2002-12-18 |
CN1165988C CN1165988C (zh) | 2004-09-08 |
Family
ID=18324832
Family Applications (5)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100694502A Expired - Lifetime CN100379024C (zh) | 1994-12-27 | 1995-12-27 | 半导体器件 |
CNB2004100694485A Expired - Lifetime CN1333296C (zh) | 1994-12-27 | 1995-12-27 | 半导体器件 |
CN95119479A Expired - Lifetime CN1083617C (zh) | 1994-12-27 | 1995-12-27 | 制造半导体器件的方法 |
CNB011329998A Expired - Lifetime CN1165988C (zh) | 1994-12-27 | 1995-12-27 | 半导体器件 |
CNB200410069449XA Expired - Lifetime CN1333297C (zh) | 1994-12-27 | 1995-12-27 | 半导体器件 |
Family Applications Before (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100694502A Expired - Lifetime CN100379024C (zh) | 1994-12-27 | 1995-12-27 | 半导体器件 |
CNB2004100694485A Expired - Lifetime CN1333296C (zh) | 1994-12-27 | 1995-12-27 | 半导体器件 |
CN95119479A Expired - Lifetime CN1083617C (zh) | 1994-12-27 | 1995-12-27 | 制造半导体器件的方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB200410069449XA Expired - Lifetime CN1333297C (zh) | 1994-12-27 | 1995-12-27 | 半导体器件 |
Country Status (4)
Country | Link |
---|---|
US (7) | US6242758B1 (zh) |
JP (1) | JP2900229B2 (zh) |
KR (3) | KR100309628B1 (zh) |
CN (5) | CN100379024C (zh) |
Families Citing this family (73)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2900229B2 (ja) | 1994-12-27 | 1999-06-02 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法および電気光学装置 |
US5814529A (en) | 1995-01-17 | 1998-09-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing a semiconductor integrated circuit including a thin film transistor and a capacitor |
US5834327A (en) | 1995-03-18 | 1998-11-10 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing display device |
TW439003B (en) * | 1995-11-17 | 2001-06-07 | Semiconductor Energy Lab | Display device |
KR100190023B1 (ko) * | 1996-02-29 | 1999-06-01 | 윤종용 | 박막트랜지스터-액정표시장치 및 그 제조방법 |
US5796121A (en) * | 1997-03-25 | 1998-08-18 | International Business Machines Corporation | Thin film transistors fabricated on plastic substrates |
US6756324B1 (en) * | 1997-03-25 | 2004-06-29 | International Business Machines Corporation | Low temperature processes for making electronic device structures |
JPH10313072A (ja) * | 1997-05-12 | 1998-11-24 | Hitachi Cable Ltd | 半導体素子搭載用基板および半導体装置 |
KR100364650B1 (ko) * | 1997-07-31 | 2002-12-16 | 샤프 가부시키가이샤 | 박막 2단자 소자, 그 제조 방법 및 액정 표시 장치 |
US7663607B2 (en) | 2004-05-06 | 2010-02-16 | Apple Inc. | Multipoint touchscreen |
US6277679B1 (en) | 1998-11-25 | 2001-08-21 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing thin film transistor |
US6563482B1 (en) | 1999-07-21 | 2003-05-13 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
TW428328B (en) * | 1999-07-30 | 2001-04-01 | Hannstar Display Corp | Fabricating method of thin film transistor |
KR100450090B1 (ko) * | 1999-10-01 | 2004-09-30 | 삼성테크윈 주식회사 | 반도체 팩키지의 리드프레임과 이 리드 프레임의 도금방법 |
US6524877B1 (en) * | 1999-10-26 | 2003-02-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and method of fabricating the same |
US6197663B1 (en) * | 1999-12-07 | 2001-03-06 | Lucent Technologies Inc. | Process for fabricating integrated circuit devices having thin film transistors |
GB0017471D0 (en) * | 2000-07-18 | 2000-08-30 | Koninkl Philips Electronics Nv | Thin film transistors and their manufacture |
JP4841751B2 (ja) * | 2001-06-01 | 2011-12-21 | 株式会社半導体エネルギー研究所 | 有機半導体装置及びその作製方法 |
JP2002368224A (ja) * | 2001-06-04 | 2002-12-20 | Sony Corp | 機能性デバイスおよびその製造方法 |
KR100488955B1 (ko) * | 2002-01-15 | 2005-05-11 | 비오이 하이디스 테크놀로지 주식회사 | 박막 트랜지스터 어레이 및 그 제조 방법 |
US6885146B2 (en) | 2002-03-14 | 2005-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Display device comprising substrates, contrast medium and barrier layers between contrast medium and each of substrates |
US7038239B2 (en) | 2002-04-09 | 2006-05-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and display device using the same |
JP3989761B2 (ja) | 2002-04-09 | 2007-10-10 | 株式会社半導体エネルギー研究所 | 半導体表示装置 |
TWI270919B (en) | 2002-04-15 | 2007-01-11 | Semiconductor Energy Lab | Display device and method of fabricating the same |
JP3989763B2 (ja) | 2002-04-15 | 2007-10-10 | 株式会社半導体エネルギー研究所 | 半導体表示装置 |
US7242021B2 (en) * | 2002-04-23 | 2007-07-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display element using semiconductor device |
TWI272556B (en) | 2002-05-13 | 2007-02-01 | Semiconductor Energy Lab | Display device |
TWI263339B (en) * | 2002-05-15 | 2006-10-01 | Semiconductor Energy Lab | Light emitting device and method for manufacturing the same |
US7256421B2 (en) | 2002-05-17 | 2007-08-14 | Semiconductor Energy Laboratory, Co., Ltd. | Display device having a structure for preventing the deterioration of a light emitting device |
JP4554152B2 (ja) * | 2002-12-19 | 2010-09-29 | 株式会社半導体エネルギー研究所 | 半導体チップの作製方法 |
JP4101643B2 (ja) * | 2002-12-26 | 2008-06-18 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US7436050B2 (en) | 2003-01-22 | 2008-10-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having a flexible printed circuit |
JP2004247373A (ja) | 2003-02-12 | 2004-09-02 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JP4526771B2 (ja) * | 2003-03-14 | 2010-08-18 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
TW594210B (en) * | 2003-08-28 | 2004-06-21 | Ind Tech Res Inst | A method for manufacturing a flexible panel for FPD |
KR100973811B1 (ko) * | 2003-08-28 | 2010-08-03 | 삼성전자주식회사 | 유기 반도체를 사용한 박막 트랜지스터 표시판 및 그 제조방법 |
US20050263903A1 (en) * | 2003-08-30 | 2005-12-01 | Visible Tech-Knowledgy, Inc. | Method for pattern metalization of substrates |
EP1542272B1 (en) | 2003-10-06 | 2016-07-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
EP1678551B1 (en) * | 2003-10-27 | 2017-03-01 | E Ink Corporation | Electro-optic displays |
US8263983B2 (en) | 2003-10-28 | 2012-09-11 | Semiconductor Energy Laboratory Co., Ltd. | Wiring substrate and semiconductor device |
US7297040B2 (en) * | 2003-10-30 | 2007-11-20 | Industrial Technology Research Institute | Method for manufacturing a flexible panel for a flat panel display |
US8064003B2 (en) * | 2003-11-28 | 2011-11-22 | Tadahiro Ohmi | Thin film transistor integrated circuit device, active matrix display device, and manufacturing methods of the same |
US7554121B2 (en) * | 2003-12-26 | 2009-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Organic semiconductor device |
JP4557755B2 (ja) * | 2004-03-11 | 2010-10-06 | キヤノン株式会社 | 基板、導電性基板および有機電界効果型トランジスタの各々の製造方法 |
TWI345312B (en) * | 2004-07-26 | 2011-07-11 | Au Optronics Corp | Thin film transistor structure and method of fabricating the same |
KR100669778B1 (ko) * | 2004-11-20 | 2007-01-16 | 삼성에스디아이 주식회사 | 기판 및 박막 트랜지스터를 구비한 기판 |
US7316942B2 (en) * | 2005-02-14 | 2008-01-08 | Honeywell International, Inc. | Flexible active matrix display backplane and method |
US7605056B2 (en) * | 2005-05-31 | 2009-10-20 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device including separation by physical force |
KR20070053060A (ko) | 2005-11-19 | 2007-05-23 | 삼성전자주식회사 | 표시장치와 이의 제조방법 |
AT503306B1 (de) | 2006-01-26 | 2007-09-15 | Univ Linz | Ferroisches bauelement |
EP3805907A1 (en) | 2006-06-09 | 2021-04-14 | Apple Inc. | Touch screen liquid crystal display |
US8243027B2 (en) | 2006-06-09 | 2012-08-14 | Apple Inc. | Touch screen liquid crystal display |
CN104965621B (zh) | 2006-06-09 | 2018-06-12 | 苹果公司 | 触摸屏液晶显示器及其操作方法 |
KR101363827B1 (ko) * | 2006-12-21 | 2014-02-17 | 엘지디스플레이 주식회사 | 플렉서블 표시장치 및 그 제조방법 |
US9710095B2 (en) | 2007-01-05 | 2017-07-18 | Apple Inc. | Touch screen stack-ups |
JP2009049384A (ja) * | 2007-07-20 | 2009-03-05 | Semiconductor Energy Lab Co Ltd | 発光装置 |
KR101399608B1 (ko) * | 2007-07-27 | 2014-05-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작방법 |
KR100880155B1 (ko) * | 2007-08-13 | 2009-01-23 | 경희대학교 산학협력단 | 박막 트랜지스터 및 그 제조 방법 |
WO2009060922A1 (en) * | 2007-11-05 | 2009-05-14 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor and display device having the thin film transistor |
TWI387109B (zh) * | 2008-06-10 | 2013-02-21 | Taiwan Tft Lcd Ass | 薄膜電晶體的製造方法 |
WO2009154794A1 (en) * | 2008-06-20 | 2009-12-23 | University Of Central Florida Research Foundation, Inc. | Solar energy converter with improved photovoltaic efficiency, frequency conversion and thermal management permiting super highly concentrated cellection |
US8114720B2 (en) | 2008-12-25 | 2012-02-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
CN101840936B (zh) * | 2009-02-13 | 2014-10-08 | 株式会社半导体能源研究所 | 包括晶体管的半导体装置及其制造方法 |
JP2009193081A (ja) * | 2009-06-01 | 2009-08-27 | Semiconductor Energy Lab Co Ltd | 表示装置及び電子装置 |
US8956718B2 (en) * | 2009-06-19 | 2015-02-17 | Apple Inc. | Transparent conductor thin film formation |
JP5147794B2 (ja) * | 2009-08-04 | 2013-02-20 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法及び電子書籍の作製方法 |
EP2494601A4 (en) | 2009-10-30 | 2016-09-07 | Semiconductor Energy Lab | SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR |
US8804056B2 (en) | 2010-12-22 | 2014-08-12 | Apple Inc. | Integrated touch screens |
TWI605590B (zh) | 2011-09-29 | 2017-11-11 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
TWI483344B (zh) * | 2011-11-28 | 2015-05-01 | Au Optronics Corp | 陣列基板及其製作方法 |
KR20150021000A (ko) | 2013-08-19 | 2015-02-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
TWI687143B (zh) * | 2014-04-25 | 2020-03-01 | 日商半導體能源研究所股份有限公司 | 顯示裝置及電子裝置 |
US10185190B2 (en) * | 2016-05-11 | 2019-01-22 | Semiconductor Energy Laboratory Co., Ltd. | Display device, module, and electronic device |
Family Cites Families (164)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US52584A (en) * | 1866-02-13 | Improvement in presses | ||
US263712A (en) * | 1882-09-05 | mcilvain | ||
US71953A (en) * | 1867-12-10 | Samuel n | ||
US553950A (en) * | 1896-02-04 | Shirt-collar fastener and adjusting device | ||
US3657613A (en) * | 1970-05-04 | 1972-04-18 | Westinghouse Electric Corp | Thin film electronic components on flexible metal substrates |
JPS4977537A (zh) | 1972-11-27 | 1974-07-26 | ||
US4065781A (en) * | 1974-06-21 | 1977-12-27 | Westinghouse Electric Corporation | Insulated-gate thin film transistor with low leakage current |
DE2508802A1 (de) | 1975-02-28 | 1976-09-09 | Siemens Ag | Verfahren zum abscheiden von elementarem silicium |
US4103297A (en) | 1976-12-20 | 1978-07-25 | Hughes Aircraft Company | Light-insensitive matrix addressed liquid crystal display system |
JPS53144297A (en) | 1977-05-20 | 1978-12-15 | Matsushita Electric Ind Co Ltd | Display device |
JPS5842448B2 (ja) | 1978-08-25 | 1983-09-20 | セイコーエプソン株式会社 | 液晶表示パネル |
US4239346A (en) | 1979-05-23 | 1980-12-16 | Hughes Aircraft Company | Compact liquid crystal display system |
US4448491A (en) * | 1979-08-08 | 1984-05-15 | Canon Kabushiki Kaisha | Image display apparatus |
US4569903A (en) * | 1980-02-11 | 1986-02-11 | Fuji Photo Film Co., Ltd. | Optical recording medium |
JPS56146142A (en) | 1980-04-16 | 1981-11-13 | Hitachi Ltd | Electrophotographic sensitive film |
JPS5727263A (en) | 1980-07-28 | 1982-02-13 | Hitachi Ltd | Electrophotographic photosensitive film |
GB2081018B (en) * | 1980-07-31 | 1985-06-26 | Suwa Seikosha Kk | Active matrix assembly for display device |
JPH02210330A (ja) | 1981-01-09 | 1990-08-21 | Semiconductor Energy Lab Co Ltd | 液晶電気光学装置 |
JPH0656887B2 (ja) | 1982-02-03 | 1994-07-27 | 株式会社日立製作所 | 半導体装置およびその製法 |
JPS58144888A (ja) | 1982-02-23 | 1983-08-29 | セイコーインスツルメンツ株式会社 | 行列形液晶表示装置 |
JPS59115574A (ja) | 1982-12-23 | 1984-07-04 | Semiconductor Energy Lab Co Ltd | 光電変換装置作製方法 |
US4591892A (en) | 1982-08-24 | 1986-05-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor photoelectric conversion device |
DE3331601A1 (de) | 1982-09-02 | 1984-03-08 | Canon K.K., Tokyo | Halbleitervorrichtung |
US4862237A (en) | 1983-01-10 | 1989-08-29 | Seiko Epson Corporation | Solid state image sensor |
JPS59204274A (ja) * | 1983-05-06 | 1984-11-19 | Seiko Instr & Electronics Ltd | 薄膜トランジスタ |
US4636038A (en) * | 1983-07-09 | 1987-01-13 | Canon Kabushiki Kaisha | Electric circuit member and liquid crystal display device using said member |
JPS6033863A (ja) | 1983-08-02 | 1985-02-21 | Ube Ind Ltd | 射出成形装置におけるピストン速度制御装置 |
JPS6035574A (ja) * | 1983-08-08 | 1985-02-23 | Ricoh Co Ltd | 薄膜トランジスタ−基板 |
JPH0693509B2 (ja) | 1983-08-26 | 1994-11-16 | シャープ株式会社 | 薄膜トランジスタ |
US4860069A (en) | 1983-09-24 | 1989-08-22 | Semiconductor Energy Laboratory Co., Ltd. | Non-single-cry stal semiconductor light emitting device |
JPS6066865A (ja) * | 1983-09-24 | 1985-04-17 | Toppan Printing Co Ltd | 薄膜トランジスタの製造方法 |
JPS60238817A (ja) * | 1984-05-12 | 1985-11-27 | Citizen Watch Co Ltd | 液晶表示装置 |
US4670763A (en) | 1984-05-14 | 1987-06-02 | Energy Conversion Devices, Inc. | Thin film field effect transistor |
US4727044A (en) | 1984-05-18 | 1988-02-23 | Semiconductor Energy Laboratory Co., Ltd. | Method of making a thin film transistor with laser recrystallized source and drain |
JPH0693166B2 (ja) | 1984-09-05 | 1994-11-16 | 株式会社日立製作所 | 液晶素子 |
EP0178447B1 (en) | 1984-10-09 | 1993-02-17 | Fujitsu Limited | A manufacturing method of an integrated circuit based on semiconductor-on-insulator technology |
JPS61141174A (ja) | 1984-12-13 | 1986-06-28 | Seiko Epson Corp | 固体撮像装置 |
DE3689735T2 (de) | 1985-08-02 | 1994-06-30 | Semiconductor Energy Lab | Verfahren und Gerät zur Herstellung von Halbleitervorrichtungen. |
US4597160A (en) | 1985-08-09 | 1986-07-01 | Rca Corporation | Method of fabricating a polysilicon transistor with a high carrier mobility |
JPS6293974A (ja) * | 1985-10-19 | 1987-04-30 | Nitto Electric Ind Co Ltd | 薄膜トランジスタアレイ |
JPS62126677A (ja) | 1985-11-27 | 1987-06-08 | Sharp Corp | 薄膜トランジスタアレイ |
JPS62135338A (ja) | 1985-12-09 | 1987-06-18 | Diafoil Co Ltd | 液晶パネル基板用ポリエチレンナフタレ−ト一軸高配向フイルム |
US4868014A (en) | 1986-01-14 | 1989-09-19 | Canon Kabushiki Kaisha | Method for forming thin film multi-layer structure member |
EP0231953A3 (en) | 1986-02-07 | 1989-08-23 | Kabushiki Kaisha Toshiba | Light-absorbing resins for display device, display devices using the resin and method of manufacturing the same |
US5107308A (en) * | 1986-07-04 | 1992-04-21 | Mitsubishi Denki Kabushiki Kaisha | Field-effect transistor |
JPS63100777A (ja) | 1986-10-16 | 1988-05-02 | Fujitsu Ltd | 透明電極のパタ−ン形成法 |
GB2202085B (en) | 1987-01-27 | 1990-02-14 | Ricoh Kk | Amorphous silicon photosensor |
US4954985A (en) | 1987-05-09 | 1990-09-04 | Semiconductor Energy Laboratory Co., Ltd. | Ferroelectric liquid crystal data storage card |
JPS6430272A (en) | 1987-07-27 | 1989-02-01 | Alps Electric Co Ltd | Thin film transistor |
US4891330A (en) | 1987-07-27 | 1990-01-02 | Energy Conversion Devices, Inc. | Method of fabricating n-type and p-type microcrystalline semiconductor alloy material including band gap widening elements |
JPH07114184B2 (ja) | 1987-07-27 | 1995-12-06 | 日本電信電話株式会社 | 薄膜形シリコン半導体装置およびその製造方法 |
JPS6437585A (en) | 1987-08-04 | 1989-02-08 | Nippon Telegraph & Telephone | Active matrix type display device |
JPS6450028A (en) | 1987-08-21 | 1989-02-27 | Nec Corp | Thin film transistor substrate |
US5032883A (en) | 1987-09-09 | 1991-07-16 | Casio Computer Co., Ltd. | Thin film transistor and method of manufacturing the same |
JPS6468724A (en) | 1987-09-09 | 1989-03-14 | Seiko Epson Corp | Active matrix panel |
US5229644A (en) * | 1987-09-09 | 1993-07-20 | Casio Computer Co., Ltd. | Thin film transistor having a transparent electrode and substrate |
US5327001A (en) | 1987-09-09 | 1994-07-05 | Casio Computer Co., Ltd. | Thin film transistor array having single light shield layer over transistors and gate and drain lines |
JPH01130131A (ja) | 1987-11-16 | 1989-05-23 | Seiko Epson Corp | ドライバー内蔵アクティブマトリクスパネル |
US4897360A (en) | 1987-12-09 | 1990-01-30 | Wisconsin Alumni Research Foundation | Polysilicon thin film process |
JPH01156725A (ja) | 1987-12-15 | 1989-06-20 | Seiko Epson Corp | 表示装置 |
JPH01161316A (ja) | 1987-12-18 | 1989-06-26 | Sharp Corp | 液晶表示装置の検査方法 |
US5268777A (en) * | 1987-12-23 | 1993-12-07 | Seiko Epson Corporation | Driving method of active matrix display having ferroelectric layer as active layer |
US4949141A (en) | 1988-02-04 | 1990-08-14 | Amoco Corporation | Vertical gate thin film transistors in liquid crystal array |
JPH01207324A (ja) * | 1988-02-15 | 1989-08-21 | Hitachi Chem Co Ltd | 溶媒可溶なポリイミド |
JP2653099B2 (ja) * | 1988-05-17 | 1997-09-10 | セイコーエプソン株式会社 | アクティブマトリクスパネル,投写型表示装置及びビューファインダー |
JPH02153353A (ja) * | 1988-07-25 | 1990-06-13 | Matsushita Electric Ind Co Ltd | 着色光重合組成物およびカラーフィルタ |
JPH0816756B2 (ja) * | 1988-08-10 | 1996-02-21 | シャープ株式会社 | 透過型アクティブマトリクス液晶表示装置 |
JPH0251129A (ja) | 1988-08-12 | 1990-02-21 | Sanyo Electric Co Ltd | アクテイブマトリクス液晶表示パネル |
JPH02103925A (ja) | 1988-10-13 | 1990-04-17 | Seiko Epson Corp | 半導体装置の製造方法 |
CA1313563C (en) | 1988-10-26 | 1993-02-09 | Makoto Sasaki | Thin film transistor panel |
DE68915524T2 (de) | 1988-12-26 | 1994-12-08 | Sharp Kk | Flüssigkristallanzeigevorrichtung. |
JP2741769B2 (ja) | 1989-01-18 | 1998-04-22 | 株式会社日立製作所 | 液晶表示装置 |
US5051570A (en) | 1989-01-20 | 1991-09-24 | Nec Corporation | Liquid crystal light valve showing an improved display contrast |
JPH02234134A (ja) | 1989-03-07 | 1990-09-17 | Nec Corp | 液晶表示装置用アクティブマトリクス基板 |
JPH034214A (ja) * | 1989-05-31 | 1991-01-10 | Sharp Corp | 液晶表示装置 |
US5231297A (en) * | 1989-07-14 | 1993-07-27 | Sanyo Electric Co., Ltd. | Thin film transistor |
GB2235326A (en) | 1989-08-16 | 1991-02-27 | Philips Electronic Associated | Active matrix liquid crystal colour display devices |
JP2813428B2 (ja) | 1989-08-17 | 1998-10-22 | 三菱電機株式会社 | 電界効果トランジスタ及び該電界効果トランジスタを用いた液晶表示装置 |
JPH03125443A (ja) | 1989-10-09 | 1991-05-28 | Sharp Corp | 実装基板の電極及び該実装基板の電極を有する液晶表示装置 |
US5498573A (en) | 1989-11-29 | 1996-03-12 | General Electric Company | Method of making multi-layer address lines for amorphous silicon liquid crystal display devices |
US5148301A (en) * | 1990-02-27 | 1992-09-15 | Casio Computer Co., Ltd. | Liquid crystal display device having a driving circuit inside the seal boundary |
US5200847A (en) | 1990-05-01 | 1993-04-06 | Casio Computer Co., Ltd. | Liquid crystal display device having driving circuit forming on a heat-resistant sub-substrate |
US5056895A (en) | 1990-05-21 | 1991-10-15 | Greyhawk Systems, Inc. | Active matrix liquid crystal liquid crystal light valve including a dielectric mirror upon a leveling layer and having fringing fields |
FR2664430B1 (fr) * | 1990-07-04 | 1992-09-18 | Centre Nat Rech Scient | Transistor a effet de champ en couche mince de structure mis, dont l'isolant et le semiconducteur sont realises en materiaux organiques. |
JPH0490514A (ja) | 1990-08-02 | 1992-03-24 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
US5210050A (en) | 1990-10-15 | 1993-05-11 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device comprising a semiconductor film |
JPH0824193B2 (ja) | 1990-10-16 | 1996-03-06 | 工業技術院長 | 平板型光弁駆動用半導体装置の製造方法 |
CA2055123C (en) * | 1990-11-09 | 1996-06-11 | Naofumi Kimura | Display apparatus |
JPH04184424A (ja) * | 1990-11-20 | 1992-07-01 | Ricoh Co Ltd | 表示装置とその製法 |
US5849601A (en) | 1990-12-25 | 1998-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
KR950001360B1 (ko) | 1990-11-26 | 1995-02-17 | 가부시키가이샤 한도오따이 에네루기 겐큐쇼 | 전기 광학장치와 그 구동방법 |
US5206749A (en) * | 1990-12-31 | 1993-04-27 | Kopin Corporation | Liquid crystal display having essentially single crystal transistors pixels and driving circuits |
US5376561A (en) | 1990-12-31 | 1994-12-27 | Kopin Corporation | High density electronic circuit modules |
US5258325A (en) * | 1990-12-31 | 1993-11-02 | Kopin Corporation | Method for manufacturing a semiconductor device using a circuit transfer film |
US5256562A (en) | 1990-12-31 | 1993-10-26 | Kopin Corporation | Method for manufacturing a semiconductor device using a circuit transfer film |
KR960002202B1 (ko) | 1991-02-04 | 1996-02-13 | 가부시끼가이샤 한도다이 에네르기 겐뀨쇼 | 액정 전기 광학 장치 제작 방법 |
EP0499979A3 (en) * | 1991-02-16 | 1993-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device |
US5521107A (en) | 1991-02-16 | 1996-05-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming a field-effect transistor including anodic oxidation of the gate |
US5854494A (en) | 1991-02-16 | 1998-12-29 | Semiconductor Energy Laboratory Co., Ltd. | Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors |
US5261156A (en) | 1991-02-28 | 1993-11-16 | Semiconductor Energy Laboratory Co., Ltd. | Method of electrically connecting an integrated circuit to an electric device |
US5250818A (en) | 1991-03-01 | 1993-10-05 | Board Of Trustees Of Leland Stanford University | Low temperature germanium-silicon on insulator thin-film transistor |
JP2794499B2 (ja) | 1991-03-26 | 1998-09-03 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JPH05299653A (ja) * | 1991-04-05 | 1993-11-12 | Fuji Xerox Co Ltd | 半導体装置及びその製造方法 |
JPH04313273A (ja) * | 1991-04-10 | 1992-11-05 | Ricoh Co Ltd | マイクロクリスタルシリコン薄膜半導体装置及びそれを用いた液晶表示装置 |
US5631753A (en) * | 1991-06-28 | 1997-05-20 | Dai Nippon Printing Co., Ltd. | Black matrix base board and manufacturing method therefor, and liquid crystal display panel and manufacturing method therefor |
JP2845303B2 (ja) * | 1991-08-23 | 1999-01-13 | 株式会社 半導体エネルギー研究所 | 半導体装置とその作製方法 |
US5334859A (en) * | 1991-09-05 | 1994-08-02 | Casio Computer Co., Ltd. | Thin-film transistor having source and drain electrodes insulated by an anodically oxidized film |
US6556257B2 (en) | 1991-09-05 | 2003-04-29 | Sony Corporation | Liquid crystal display device |
JPH05109484A (ja) * | 1991-10-17 | 1993-04-30 | Tohoku Pioneer Kk | Elデイスプレイユニツト |
JP2777758B2 (ja) * | 1991-10-28 | 1998-07-23 | シャープ株式会社 | 液晶表示装置の製造方法 |
JP3247904B2 (ja) * | 1991-10-29 | 2002-01-21 | 大日本印刷株式会社 | ブラックマトリックス基板の製造方法 |
JPH06118441A (ja) | 1991-11-05 | 1994-04-28 | Tadanobu Kato | 表示セル |
US5403756A (en) | 1991-11-20 | 1995-04-04 | Sharp Kabushiki Kaisha | Method of producing a polycrystalline semiconductor film without annealing, for thin film transistor |
TW215967B (en) * | 1992-01-17 | 1993-11-11 | Seiko Electron Co Ltd | MOS Poly-Si thin film transistor with a flattened channel interface and method of producing same |
JPH06163958A (ja) | 1992-02-21 | 1994-06-10 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
TW222345B (en) * | 1992-02-25 | 1994-04-11 | Semicondustor Energy Res Co Ltd | Semiconductor and its manufacturing method |
US5477309A (en) | 1992-03-09 | 1995-12-19 | Nikon Corporation | Alignment apparatus |
JP2958186B2 (ja) | 1992-04-20 | 1999-10-06 | シャープ株式会社 | プラスチック基板液晶表示素子 |
TW214603B (en) * | 1992-05-13 | 1993-10-11 | Seiko Electron Co Ltd | Semiconductor device |
JP2821830B2 (ja) | 1992-05-14 | 1998-11-05 | セイコーインスツルメンツ株式会社 | 半導体薄膜素子その応用装置および半導体薄膜素子の製造方法 |
JPH0675237A (ja) | 1992-08-28 | 1994-03-18 | Sharp Corp | 反射型液晶表示装置 |
ATE173839T1 (de) | 1992-09-11 | 1998-12-15 | Kopin Corp | Farbfiltersystem fuer anzeigetafeln |
JPH06118440A (ja) * | 1992-10-07 | 1994-04-28 | Idemitsu Kosan Co Ltd | 液晶表示素子およびその製造方法 |
US5346850A (en) * | 1992-10-29 | 1994-09-13 | Regents Of The University Of California | Crystallization and doping of amorphous silicon on low temperature plastic |
US5781164A (en) * | 1992-11-04 | 1998-07-14 | Kopin Corporation | Matrix display systems |
JPH0798620A (ja) | 1992-11-13 | 1995-04-11 | Seiko Epson Corp | 電子装置およびこれを用いたコンピュータ |
JP3200481B2 (ja) | 1992-11-18 | 2001-08-20 | ナミックス株式会社 | 液晶表示パネル用シール材及びそれを用いた液晶表示パネル |
JPH06163959A (ja) * | 1992-11-27 | 1994-06-10 | Sanyo Electric Co Ltd | 透光性導電酸化物膜の分離形成方法 |
US5403762A (en) | 1993-06-30 | 1995-04-04 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a TFT |
JP2755281B2 (ja) | 1992-12-28 | 1998-05-20 | 富士電機株式会社 | 薄膜太陽電池およびその製造方法 |
JP2937671B2 (ja) | 1993-01-14 | 1999-08-23 | シャープ株式会社 | 液晶表示素子およびその製造方法 |
JP3562588B2 (ja) | 1993-02-15 | 2004-09-08 | 株式会社半導体エネルギー研究所 | 半導体装置の製造方法 |
TW241377B (zh) | 1993-03-12 | 1995-02-21 | Semiconductor Energy Res Co Ltd | |
US5567550A (en) | 1993-03-25 | 1996-10-22 | Texas Instruments Incorporated | Method of making a mask for making integrated circuits |
US5747355A (en) * | 1993-03-30 | 1998-05-05 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing a transistor using anodic oxidation |
DE69325583T2 (de) | 1993-04-09 | 1999-12-02 | Citizen Watch Co Ltd | Flüssigkristallvorrichtung |
JPH06347827A (ja) | 1993-06-07 | 1994-12-22 | Hitachi Ltd | 液晶表示装置およびその製造方法 |
JP3184853B2 (ja) * | 1993-06-24 | 2001-07-09 | 株式会社日立製作所 | 液晶表示装置 |
JP3208693B2 (ja) | 1993-07-06 | 2001-09-17 | コニカ株式会社 | 帯電防止されたハロゲン化銀写真感光材料 |
JP3173926B2 (ja) | 1993-08-12 | 2001-06-04 | 株式会社半導体エネルギー研究所 | 薄膜状絶縁ゲイト型半導体装置の作製方法及びその半導体装置 |
US5477073A (en) | 1993-08-20 | 1995-12-19 | Casio Computer Co., Ltd. | Thin film semiconductor device including a driver and a matrix circuit |
US5436744A (en) | 1993-09-03 | 1995-07-25 | Motorola Inc. | Flexible liquid crystal display with integrated driver circuit and display electrodes formed on opposite sides of folded substrate |
KR970006723B1 (ko) | 1993-09-07 | 1997-04-29 | 한국과학기술원 | 입자 크기가 큰 다결정 규소 박막의 제조방법 |
US5527998A (en) * | 1993-10-22 | 1996-06-18 | Sheldahl, Inc. | Flexible multilayer printed circuit boards and methods of manufacture |
KR100299292B1 (ko) | 1993-11-02 | 2001-12-01 | 이데이 노부유끼 | 다결정실리콘박막형성방법및그표면처리장치 |
US5576231A (en) | 1993-11-05 | 1996-11-19 | Semiconductor Energy Laboratory Co., Ltd. | Process for fabricating an insulated gate field effect transistor with an anodic oxidized gate electrode |
US5673127A (en) | 1993-12-01 | 1997-09-30 | Matsushita Electric Industrial Co., Ltd. | Display panel and display device using a display panel |
US5470681A (en) | 1993-12-23 | 1995-11-28 | International Business Machines Corporation | Phase shift mask using liquid phase oxide deposition |
US5416744A (en) * | 1994-03-08 | 1995-05-16 | Motorola Inc. | Memory having bit line load with automatic bit line precharge and equalization |
US5456763A (en) * | 1994-03-29 | 1995-10-10 | The Regents Of The University Of California | Solar cells utilizing pulsed-energy crystallized microcrystalline/polycrystalline silicon |
JPH07302912A (ja) | 1994-04-29 | 1995-11-14 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JP3715996B2 (ja) * | 1994-07-29 | 2005-11-16 | 株式会社日立製作所 | 液晶表示装置 |
US5747928A (en) | 1994-10-07 | 1998-05-05 | Iowa State University Research Foundation, Inc. | Flexible panel display having thin film transistors driving polymer light-emitting diodes |
US5776083A (en) * | 1994-11-22 | 1998-07-07 | Jacob; Gary | Exercise device for use in the rehabilitative therapy of joint complexes |
JP3512496B2 (ja) | 1994-11-25 | 2004-03-29 | 株式会社半導体エネルギー研究所 | Soi型半導体集積回路の作製方法 |
JP2900229B2 (ja) | 1994-12-27 | 1999-06-02 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法および電気光学装置 |
JP3364081B2 (ja) | 1995-02-16 | 2003-01-08 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US5757456A (en) | 1995-03-10 | 1998-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method of fabricating involving peeling circuits from one substrate and mounting on other |
US5834327A (en) * | 1995-03-18 | 1998-11-10 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing display device |
JP3499327B2 (ja) | 1995-03-27 | 2004-02-23 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
GB9521855D0 (en) | 1995-10-25 | 1996-01-03 | Philips Electronics Nv | Manufacture of electronic devices comprising thin-film circuitry |
US5717223A (en) | 1995-12-22 | 1998-02-10 | Xerox Corporation | Array with amorphous silicon TFTs in which channel leads overlap insulating region no more than maximum overlap |
US6429758B1 (en) * | 2000-12-04 | 2002-08-06 | Renaissance Electronics Corporation | Miniature electromechanical switch |
US6819316B2 (en) * | 2001-04-17 | 2004-11-16 | 3M Innovative Properties Company | Flexible capacitive touch sensor |
-
1994
- 1994-12-27 JP JP33916294A patent/JP2900229B2/ja not_active Expired - Lifetime
-
1995
- 1995-12-27 CN CNB2004100694502A patent/CN100379024C/zh not_active Expired - Lifetime
- 1995-12-27 CN CNB2004100694485A patent/CN1333296C/zh not_active Expired - Lifetime
- 1995-12-27 CN CN95119479A patent/CN1083617C/zh not_active Expired - Lifetime
- 1995-12-27 CN CNB011329998A patent/CN1165988C/zh not_active Expired - Lifetime
- 1995-12-27 KR KR1019950072159A patent/KR100309628B1/ko not_active IP Right Cessation
- 1995-12-27 CN CNB200410069449XA patent/CN1333297C/zh not_active Expired - Lifetime
-
1997
- 1997-10-22 US US08/955,617 patent/US6242758B1/en not_active Expired - Lifetime
- 1997-11-03 US US08/962,840 patent/US6429053B1/en not_active Expired - Lifetime
- 1997-12-30 KR KR1019970077594A patent/KR100341709B1/ko not_active IP Right Cessation
- 1997-12-30 KR KR1019970077595A patent/KR100305416B1/ko not_active IP Right Cessation
-
2004
- 2004-04-02 US US10/815,654 patent/US8466469B2/en not_active Expired - Fee Related
- 2004-04-02 US US10/815,653 patent/US20040183076A1/en not_active Abandoned
- 2004-05-25 US US10/852,125 patent/US7504660B2/en not_active Expired - Fee Related
- 2004-05-25 US US10/852,124 patent/US7468526B2/en not_active Expired - Fee Related
- 2004-08-26 US US10/925,980 patent/US7462519B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN100379024C (zh) | 2008-04-02 |
KR100309628B1 (ko) | 2002-06-20 |
US20040183076A1 (en) | 2004-09-23 |
US7468526B2 (en) | 2008-12-23 |
US20050020002A1 (en) | 2005-01-27 |
CN1333297C (zh) | 2007-08-22 |
CN1130304A (zh) | 1996-09-04 |
US6242758B1 (en) | 2001-06-05 |
CN1165988C (zh) | 2004-09-08 |
US7504660B2 (en) | 2009-03-17 |
CN1553270A (zh) | 2004-12-08 |
US20050045884A1 (en) | 2005-03-03 |
US6429053B1 (en) | 2002-08-06 |
US7462519B2 (en) | 2008-12-09 |
US20040183077A1 (en) | 2004-09-23 |
CN1333296C (zh) | 2007-08-22 |
JPH08186267A (ja) | 1996-07-16 |
KR19990057541A (ko) | 1999-07-15 |
JP2900229B2 (ja) | 1999-06-02 |
KR100341709B1 (ko) | 2002-11-30 |
CN1083617C (zh) | 2002-04-24 |
CN1553519A (zh) | 2004-12-08 |
KR100305416B1 (ko) | 2001-11-22 |
US8466469B2 (en) | 2013-06-18 |
US20040211962A1 (en) | 2004-10-28 |
CN1553271A (zh) | 2004-12-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1165988C (zh) | 半导体器件 | |
CN1094652C (zh) | 制造具有结晶半导体膜的半导体器件的方法 | |
CN100336168C (zh) | 制造薄膜晶体管阵列基板的方法 | |
CN1399165A (zh) | 显示器件 | |
CN1109212A (zh) | 半导体器件及其制造方法 | |
CN1553507A (zh) | 半导体器件及其制造方法 | |
CN1691340A (zh) | 电子装置及制造该电子装置的方法 | |
CN1773717A (zh) | 有机场致发光显示装置及构造该装置的方法 | |
CN1716552A (zh) | 半导体器件的制造方法及通过该方法制造的半导体 | |
CN1172352C (zh) | 半导体装置及其制造方法 | |
CN1842919A (zh) | 薄膜晶体管及其制造方法 | |
CN1151405C (zh) | 薄膜晶体管液晶显示器及其制造方法 | |
CN1245976A (zh) | 半导体器件 | |
CN1893089A (zh) | 显示器基板、其制造方法及采用该基板的显示装置 | |
CN1151541C (zh) | 薄膜晶体管显示器的电子元件及其制作方法 | |
CN1949524A (zh) | 像素结构及其制造方法 | |
CN1921076A (zh) | 薄膜晶体管的制造方法 | |
CN1581450A (zh) | 低温多晶硅薄膜晶体管的制造方法 | |
CN1746329A (zh) | 多晶形铟锡氧化物薄膜以及多晶形铟锡氧化物电极的制造方法 | |
JP4060287B2 (ja) | カード型電子機器 | |
JP3866249B2 (ja) | 表示装置 | |
JP4060290B2 (ja) | 半導体装置 | |
CN1728351A (zh) | 薄膜晶体管制造方法 | |
CN1828927A (zh) | 有机发光二极管显示面板及其多晶硅通道层的形成方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CX01 | Expiry of patent term |
Granted publication date: 20040908 |
|
EXPY | Termination of patent right or utility model |