CN1387675A - 用顺序横向固化制造均匀大晶粒和晶粒边界位置受控的多晶硅薄膜半导体的方法 - Google Patents

用顺序横向固化制造均匀大晶粒和晶粒边界位置受控的多晶硅薄膜半导体的方法 Download PDF

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CN1387675A
CN1387675A CN00815450A CN00815450A CN1387675A CN 1387675 A CN1387675 A CN 1387675A CN 00815450 A CN00815450 A CN 00815450A CN 00815450 A CN00815450 A CN 00815450A CN 1387675 A CN1387675 A CN 1387675A
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J·S·艾姆
R·S·斯波茜里
M·A·克劳德尔
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Columbia University of New York
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Abstract

揭示了将非晶硅(542)薄膜样本(170)加工成多晶硅(540)薄膜的方法。在一种较佳装置例中,一种方法包括步骤:产生一个序列的受激准分子激光脉冲(164);将该序列中每个受激准分子激光(110)脉冲调节成一预定流量;按一预定平面均化该序列中每个已调节的激光脉冲;用二维狭缝图案(220)遮蔽该序列中每个均化的流量受控激光脉冲的一部分,以产生流量受控的直线定形细光束脉冲序列,在狭缝图案中的每条狭缝应足够窄,以避免在由细光束照射的硅薄膜样本上相应于该狭缝的区域内引起成核现象;用流量受控的狭缝定形细光束序列照射非晶硅薄膜,由此将相应于定形细光束脉冲序列中的每个流量受控的定形细光束脉冲的部分非晶硅熔化。

Description

用顺序横向固化制造均匀大晶粒 和晶粒边界位置受控的多晶硅薄膜半导体的方法
技术领域
本发明涉及半导体加工技术，尤其涉及低温下进行的半导体加工。
背景技术
在半导体加工领域，已经有几种用激光将薄非晶硅膜转变成多晶硅膜的试验。例如，在James Im等人的“用于集成有源矩阵液晶显示器的结晶硅膜”一文中，11 MSR Bullitin 39(1996年)，概述了传统受激准分子激光器的退火技术。在这样的系统中，受激准分子激光束整形为长形光束，通常长为30厘米，宽为500微米或更宽。该整形的光束在非晶体硅样本上进行扫描，使非晶硅熔化，在样本再凝固时形成多晶硅。
因几种原因，用传统受激准分子激光器退火技术生产多晶硅，存有问题。首先，在处理中过程产生的多晶硅，其晶粒通常较小，具有随机的微结构，而且晶粒的大小不均匀。因此，导致低质量的和不均匀的器件，并因此造成产品的成品率低。其次，为了达到合格的性能标准，只能保持较低的多晶硅生产能力。并且，处理过程通常要求控制环境和非晶硅样本的预热，这也将使生产能力降低。因此，在该领域中，需要能以较高的生产能率制造高质量的多晶硅。同样地，需要能制造更大的，并且更均匀的微结构多晶硅薄膜的生产技术。该微结构多晶硅薄膜用于制造高质量器件，例如平板显示器。
发明概述
本发明的一个目的是，提供用顺序横向固化工艺来制造均匀大晶粒的，且晶粒边界位置可控的多晶薄膜半导体的技术。
本发明的另一个目的是，基本上在整个半导体样本上形成大晶粒的，且晶粒边界位置可控的多晶硅。
本发明的再一个目的是，提供生产显示器和其他产品所需的半导体器件的制造技术，其中，相对于器件中的电流方向可控地对准或错开半导体晶粒边界的主要取向。
为了达到这些目的和其他目的，参考下列描述，就可理解本发明揭示的用于将非晶体硅薄膜样本加工成多晶体硅薄膜的方法。在一种较佳装置中，一种方法包括下列步骤：产生受激准分子激光脉冲序列；将该序列中每个受激准分子激光脉冲可控地调节到一预定流量；按预定平面均化该序列中每个已调节的激光脉冲；用二维狭缝图案遮蔽该序列中每个均化的流量受控激光脉冲的一部分，以产生流量受控的直线定形细光束脉冲序列。该狭缝图案中的每条狭缝必须足够窄，以防止在硅薄膜样本上，由细光束照射的，相应于狭缝的区域诱导出的明显成核现象；用流量受控的狭缝定形细光束序列照射非晶体硅薄膜样本，由此，将相应于定形细光束脉冲序列中的每个流量受控的定形细光束脉冲的一部分非晶体硅薄膜熔化；顺序可控地移动样本与每个流量受控的狭缝定形细光束脉冲的相对位置，由此，将非晶硅薄膜样本加工成单晶或多晶硅薄膜。
在一种较佳装置中，遮蔽步骤包括：用基本上为二维平行直狭缝图案遮蔽所述序列中每个均化的流量受控激光脉冲的一部分，以产生流量受控的狭缝定形细光束脉冲序列。该平行直狭缝间隔一预定距离，并按平行于所述均化平面的一个方向线性延伸。有利地，提供移动步骤，用于基本上在整个预定的狭缝间隔距离内，按与每个流量受控的狭缝定形细光束脉冲垂直的方向，顺序可控移动样本的相对位置，由此，将非晶体硅薄膜样本加工成具有长晶粒的，方向受控晶体的多晶硅薄膜。
在一种特殊地较佳装置中，遮蔽步骤包括：用基本上为二维平行直狭缝图案遮蔽所述序列中每个均化的流量受控激光脉冲的一部分，以产生流量受控的狭缝定形细光束脉冲序列。该平行直狭缝具有预定宽度，预定的间隔距离小于该预定宽度，并按平行于所述均化平面的一个方向线性延伸。在这种装置中，移动步骤包括：按垂直于每个流量受控的狭缝定形细光束脉冲方向，将样本的相对位置平移一段小于预定宽度的距离，由此，只用两个激光脉冲，将非晶体硅薄膜样本加工成具有长晶粒的，方向受控晶体的多晶硅薄膜。在一个示范实施例中，该预定宽度约为4微米，该预定间隔距离约为2微米，而平移距离约为3微米。
在一种较佳替代装置中，遮蔽步骤包括：用基本上为二维平行直狭缝图案遮蔽所述序列中每个均化的流量受控激光脉冲的一部分，以产生流量受控的狭缝定形细光束脉冲序列。该平行直狭缝间隔一预定距离，并按与所述均化平面的一个方向基本上成45度角的方向线性延伸。在这种装置中提供的移动步骤，用于基本上在整个预定的狭缝间隔距离内，按平行于均化平面一个方向的方向，顺序可控移动该样本的相对位置，由此，将非晶体硅薄膜样本加工成多晶硅薄膜，该多晶硅薄膜具有长晶粒且与薄硅膜的XY轴失去方向对准的方向受控晶体。
然而，在另一个较佳装置中，遮蔽步骤包括：用二维相交直狭缝图案遮蔽所述序列中每个均化的流量受控激光脉冲的一部分，以产生流量受控的狭缝定形细光束脉冲序列。在相交直狭缝中，第一组直狭缝相隔为第一个预定间隔，并按与均化平面的第一个方向基本上成45度角的方向线性延伸；而第二组直狭缝相隔为第二个预定间隔距离，并按与均化平面的第二个方向基本上成45度角的方向线性延伸，而且与第一组相交成基本上为90度的角。提供相应的移动步骤，用于基本上在整个第一个预定的狭缝间隔距离内，按与均化平面的第一个方向平行的方向，顺序可控移动样本的相对位置，由此，将非晶体硅薄膜样本加工成具有大金刚石形晶体的多晶硅薄膜。
还在另一个替代装置中，遮蔽步骤包括：用锯齿形二维狭缝图案遮蔽所述序列中每个均化的流量受控激光脉冲的一部分，以产生流量受控的狭缝定形细光束脉冲序列。该锯齿形狭缝间隔一预定距离，并按平行于所述均化平面的一个方向线性延伸。在这种装置中提供的移动步骤，用于基本上在整个预定的狭缝间隔距离内，按与流量受控的狭缝定形细光束脉冲的垂直方向，顺序可控移动样本的相对位置，由此，将非晶体硅薄膜样本加工成具有大六边形晶体的多晶硅薄膜。
在一种修改装置中，提供一种利用圆点花纹图案将非晶体硅薄膜样本加工成多晶体硅薄膜的替代技术。该技术包括：产生受激准分子激光脉冲序列；在预定平面内均化该序列中的每个激光脉冲；用基本上不透明的二维点图案遮蔽该序列中的每个均化激光脉冲的一部分，以产生不透明点状定形细光束脉冲序列；用该不透明点图案的细光束序列照射非晶体硅薄膜样本，由此，将非晶硅上相应于定形细光束脉冲序列中的每个不透明点图案的细光束脉冲的部分熔化，通过沿两条垂直轴更换移动方向，顺序可控移动相对于每个点花纹定形细光束脉冲的样本，并且移动的距离小于样本顶面(super)横向生长距离，由此，将非晶体硅薄膜样本加工成多晶硅薄膜。
并入和构成本公布文件一部分的附图，将描述本发明的一种较佳实施例，并用于说明本发明的原理。
附图概述
图1是用于实行横向固化工艺的系统功能框图，更适合于实行本发明的较佳处理过程；
图2a是原理图，示出带有虚线图案的掩模；
图2b是结晶硅膜原理图，该结晶硅膜是用图1系统中的图2a所示掩模产生的；
图3a是原理图，示出带有人字形图案的掩模；
图3b是结晶硅膜原理图，该结晶硅膜是用图1系统中的图3a所示掩模产生的；
图4a是原理图，示出带有直线形图案的掩模；
图4b是结晶硅膜原理图，该结晶硅膜是用图1系统中的图4a所示掩模产生的；
图5a是原理图，示出用直线形掩模照射硅样本的区域；
图5b是原理图，示出在初次照射并平移样本后，用带有直线形图案的掩模照射硅样本的区域；
图5c是原理图，示出在第二次照射后的结晶硅膜；
图6a是原理图，示出带有斜线图案的掩模；
图6b是结晶硅膜原理图，该结晶硅膜是用图1系统中的图6a所示掩模产生的；
图7a是原理图，示出带有锯齿形图案的掩模；
图7b是结晶硅膜原理图，该结晶硅膜是用图1系统中的图7a所示掩模产生的；
图8a是原理图，示出带有交叉对角线图案的掩模；
图8b是结晶硅膜原理图，该结晶硅膜是用图1系统中的图8a所示掩模产生的；
图9a是原理图，示出带有圆点花纹图案的掩模；
图9b是原理图，描述用图9a掩模的掩模平移；
图9c是结晶硅膜原理图，该结晶硅膜是利用图9b所示掩模平移方案，用图1系统中的图9b所示的掩模产生的；
图9d是替代结晶硅膜原理图，该结晶硅膜是利用图9b所示掩模平移方案，用图1系统中的图9b所示的掩模产生的；以及
图10是流程框图，描述在图1系统中执行的步骤。
较佳实施例详述
本发明提供用于制造均匀大晶粒，且晶粒边界可控的多晶薄膜半导体的技术，该技术利用顺序横向固化工艺。为了完全理解这些技术，首先必须明白顺序横向固化工艺。
顺序横向固化工艺是一种通过在受激准分子激光器发射的连续脉冲之间小量单向地平移硅样本来制造大晶粒硅结构的技术。当每个脉冲被样本吸收时，通过前述的脉冲装置的脉冲使样本中的一小块完全熔化，并且横向再凝固成结晶区
在共同待批(co-pending)的专利申请，名为“低温下用顺序横向固化制造单晶或多晶硅薄膜的系统和方法”中公布的一种特别便利的顺序横向固化工艺和一种执行该工艺的装置。该专利申请与本申请一起提出，并且转让给共同专利受让人，在这里，并入该公布的专利作为参考。当披露前述的有关共同待批的专利申请中描述的特殊技术时，应当明白，可以容易地修改其他的顺序横向固化技术适合用于本发明中。
参考图1，该共同待批专利申请作为一个较佳实施例描述。一个系统包括：受激准分子激光器110；能量密度调节器120，用于快速改变激光束111的能量密度；激光束衰减器和快门130；光学器件140，141，142和143；激光束均匀器144；透镜系统145，146，148；遮蔽系统150；透镜系统161，162，163；入射激光脉冲164；薄硅膜样本170；样本平移台180；花岗石块190；支撑系统191，192，193，194，195，196；和管理计算机100。硅样本170的X和Y方向的平移是通过遮蔽系统150内移动掩模710或者通过在计算机100的指令下移动样本平移台180来实现。
如共同待批专利申请中进一步详细所述，经过下列步骤将非晶硅薄膜样本加工成单晶或多晶硅薄膜：产生多个有预定流量的受激准分子激光脉冲；可控地调节受激准分子激光脉冲的流量；在预定平面内均化已调整的激光脉冲；遮蔽已均化调节的激光脉冲的部分，以形成定形细光束；用定形细光束照射非晶硅薄膜样本，由此将相应于细光束的部分非晶硅熔化；相对于定形细光束和相对于已控制的调节，可控地平移样本，由此用相对于定形细光束顺序平移样本，并紧接着在相应顺序位置用流量变化的定形细光束照射样本，将非晶硅薄膜样本加工成单晶或多晶硅薄膜。将参考前述的处理技术描述本发明的下列实施例。
参考图2a和b，描述本发明第一实施例。图2a描述带有狭缝图案220的掩模210。掩模210最好由石英基片制成，并包括由传统技术蚀刻成的金属或介质涂层，以形成掩模图案，如图2a所示。每条狭缝220具有宽度230，该宽度按照器件所需的尺度来选择。在样本上相对于狭缝220的特殊位置上制成该器件。例如在样本170上，狭缝220宽应当约为25微米，以制成一个25微米的半导体器件，或者在由多部分组成的器件的情况下，一个器件一个通道。对每个激光脉冲，为了使狭缝足够地窄，以避免样本170上的成核现象，并宽到使横向固化生长达到最大值，狭缝220的宽度240最好约在2和5微米之间。应当明白，虽然图2a描述一个规则的狭缝图案220，但按照在薄膜170上制造所需的微结构，可以利用任何其他的狭缝图案。
按照本发明，为了在样本170上生长晶体区域，样本170相对于激光脉冲164的平移，可以通过移动遮蔽系统150或样本平移台180来实现。当样本170按Y方向移动，而掩模210用在遮蔽系统150时，就产生具有结晶区260的处理过的样本250，如图2b所示。每个结晶区的宽度270约等于掩模210上的宽度230。每个结晶区的长度280约等于Y方向移动的距离。该距离由移动遮蔽系统150或平移台180实现。至于结晶区的宽度，应当按照最终器件的特性来选择。每个结晶区260包括带有长形的和方向受控晶粒的多晶硅。
参考随后的图3a和b，将描述本发明的第二实施例。图3a描述包含人字形图案320的掩模310。人字形的每边宽度320将决定在样本170上形成的最后的单结晶区的大小。当样本170按Y方向移动，而掩模310用在遮蔽系统150时，产生具有结晶区360的处理过的样本350，如图3b所示。每个结晶区360将包括一块金刚石形的单结晶区370和位于每个人字形尾部的两块长晶粒且方向受控的多晶硅区380。
当参考图2和3描述的实施例方便地在硅样本170上产生空间分隔的器件时，在最终的半导体器件中，至少不利用硅样本170上的某些区域。为了便于更灵活地配置在半导体样本170上研制的器件。将描述下列较佳实施例。
参考图4a和b，将描述本发明第三实施例。图4a描述包含狭缝图案410的掩模410。每条狭缝410应尽可能地在掩模上，横向延伸到入射到掩模上的均匀激光束149所允许范围。每条狭缝410必须有宽度440，该宽度应足够地窄以避免在样本170的照射区发生任何成核现象。宽度440将取决于多种因素，包括：入射激光脉冲的能量密度；入射激光脉冲的持续时间；硅薄膜样本的厚度；和硅基的温度和电导率。例如，在室温下以持续时间为30纳秒，能量密度稍微超过样本完全熔化阈值的激光脉冲照射厚度为500埃的薄膜时，狭缝的宽度不应大于2微米。
当样本170按Y方向移动，而掩模410用在遮蔽系统150时，产生具有结晶区460的已处理样本450，如图4b所示。每块结晶区460包括长晶粒的，方向受控晶体470。依照样本410上的掩膜狭缝420的间隔421，晶粒470的长度可以长些或短些。为了避免在样本170上留有非晶硅区域，Y方向移动距离必须至少与掩膜线间的距离421同样长。较佳的移动距离至少比该距离421大1微米，以除去在方向受控多晶硅结构的原始期必然产生的小结晶。
将描述一种使用具有直线图案掩模的推荐技术。利用如图4a所示的掩模，该掩模上紧密排列的掩膜线420具有的宽度440为4微米，其间隔为2微米，用一个激光脉冲照射样本170。如图5a所示，激光脉冲将熔化样本上的510，511，512区域，在那里，每块熔化区宽520约为4微米，其间隔521约为2微米。第一个脉冲将在照射区510，511，512上诱导晶体生长。该晶体生长从熔化边界530开始，一直进行到熔化区内，因此在照射区形成多晶硅540，如图5b所示。
为了除去在熔化边界530形成的许多小的原始晶体541，样本170按Y方向平移3微米，并又用单个受激准分子激光脉冲照射。第二次照射区551，552，553使剩余的非晶硅542和多晶硅540的初始结晶区543熔化，同时保留多晶硅的剩余的中间部分545。如图5c所示，形成的中间段545的晶体结构在熔化区542凝固时向外生长。所以，在样本170上形成方向受控的长晶粒状多晶硅器件。
参考图6a和b，将描述本发明第四实施例。图6a描述具有斜线图案620的掩模610。当样本170按Y方向移动，而掩模610用在遮蔽系统150时，产生具有结晶区660的已处理样本650，如图6b所示。每块结晶区660包括长晶粒的，方向受控的晶体670。
如同上面参考图4a和b所描述的实施例，移动的距离将取决于所需的晶体长度。同样，参考图5a-c所描述的工艺，可容易地用图6a所示的掩模实现。该掩模的直线宽620为4微米，其间隔为2微米。在制造与XY轴取向的显示器或其他器件中，该实施例是特别有利，因为多晶硅结构不垂直于轴，而相应地，该器件的性能将不受X或Y坐标的约束。
参考图7a和b，将描述本发明的第五实施例。图7a描述具有偏置锯齿形图案720，721的掩模710。当样本170按Y方向移动，而掩模710用在遮蔽系统150时，产生具有结晶区760的已处理样本750，如图7b所示。每块结晶区760包括一排六边形-矩形晶体770。如果移动距离稍大于锯齿图案的间隔，该晶体会是六边形。该实施例有利于生产较大的硅晶粒，并能提高器件的性能。
参考随后的图8a和b，将描述本发明的第六实施例。图8a描述包含对角线交叉图案821，822的掩模810。当样本170按Y方向移动，而掩模810用在遮蔽系统150时，产生具有结晶区860的已处理样本850，如图8b所示。每块结晶区860包括一排金刚石形晶体870。如移动的距离稍大于图案的间隔，该晶体会是正方形。该实施例同样有利于生产较大的硅晶粒，并能提高器件的性能。
参考紧随的图9a-d。将描述本发明的第七实施例。图9a描述包含圆点花纹图案920的掩模910。圆点花纹掩模910是一块反向的掩模，该掩模上，圆点920相应于遮蔽区，而掩模921的其余部分是透明区。为了制造大晶粒硅晶体，在样本170上所需晶体的点附近，顺序地移动点花纹图案。例如，如图9b所示，圆点花纹掩模可以在第一个激光脉冲后按Y的正方向移动短距离931，在第二个激光脉冲后按X的正方向移动短距离932，在第三个脉冲后再按Y的负方向移动短距离933，以诱导形成大晶体。如果圆点花纹间的间隔距离大于两倍的横向生长距离，在所产生的晶体结构950上，晶体960被小晶粒多晶硅区961隔开，如图9c所示。如果间隔距离小于或等于两倍的横向生长距离，以致避免成核现象，在晶体结构970上产生晶体980，如图9d所示。
参考图10，将描述由计算机100控制有关图9中所进行的晶体生长工艺所执行的步骤。图10是流程框图，描述图1系统中执行的基本步骤。步骤1000，由计算机初始化处理过程来初始化图1所示系统中的各种电子设备。然后在步骤1005，将薄硅膜样本装入样本平移台。应当注意。装入样本可以手动进行或在计算机100控制下自动执行。下一步1015，将样本平移台移到初始位置，该步骤可能包括对准样本上的有关特征。如需要，在步骤1020，对系统中各种光学元件的进行聚焦。然后在步骤1025，依照要执行的特殊处理，激光器稳定至需要完全熔化硅样本所需的能级和重复频率。如果需要，在步骤1030，微调激光脉冲的衰减。
下一步1035，打开快门使样本受单个激光脉冲的照射，并因此开始顺序横向凝固处理。在步骤1040，按X或Y方向移动样本，其移动量小于顶面横向生长距离。在步骤1045，又打开快门，使样本受单个激光脉冲照射，并在1050，又按X或Y方向以移动样本，其移动量小于顶面横向生长距离。当然，为了形成圆点花纹，如果在步骤1040，按X方向移动样本，在步骤1050，应当按Y方向移动该样本。然后在步骤1055，用第三个激光脉冲照射样本。为了能用4个或更多个激光脉冲生长成圆点花纹区，在步骤1060，可以重复步骤1050，1055的样本移动和照射处理。
接着，如果已设计在样本上的其他区域进行结晶处理，则在步骤1065和1066，重新定位样本，在新的区域重复结晶处理。如不需要在其他区域进行结晶处理，则在步骤1070关掉激光器，在步骤1075关闭硬件，并在步骤1080处理过程结束。当然，如果希望处理其他样本，或者如果本发明用于批处理，在每块样本上重复步骤1005，1010，和1035-1065。
在上面仅仅描述了本发明的原理。对熟悉这儿涉及的技术的人员来说，会明白对所述实施例的各种修改和替换。例如，可以用含有预成形岛状图案(pre-patterned islands)的硅膜代替薄硅膜样本170。同样，用参考图5a-c所述两个激光脉冲，直线图案掩模可用于生长多晶硅，然后旋转90度，并又用相同的处理过程，以产生一排正方形的单晶硅。这样将认识到，虽然这儿没有明白地示出或描述，那些技术熟练人员能够设计包含有本发明原理的许多系统和方法，并因此属于本发明的精神的范畴内。

Claims (14)

1.一种将非晶硅薄膜样本加工成多晶硅薄膜的方法，其特征在于，该方法包括下列步骤：
(a)产生受激准分子激光脉冲序列；
(b)将所述序列中的每个受激准分子激光脉冲可控地调节到一预定流量；
(c)按预定平面均化所述序列中每个已调节的激光脉冲；
(d)用二维狭缝图案遮蔽所述序列中每个均化的流量受控激光脉冲的一部分，以产生流量受控的直线定形细光束脉冲序列，所述狭缝图案中的每条狭缝必须足够窄，以防止在被细光束照射的相应于所述狭缝的硅薄膜样本区域中引起明显的成核现象；
(e)用所述流量受控的狭缝定形细光束序列照射非晶硅薄膜样本，以实现其中相应于所述定形细光束脉冲序列中每个流量受控的定形细光束脉冲的部分非晶硅薄膜的熔化；以及
(f)可控地顺序移动所述样本与每个所述流量受控的狭缝定形细光束脉冲的相对位置，由此将非晶硅薄膜样本加工成单晶或多晶硅薄膜。
2.权利要求1的方法，其特征在于，所述遮蔽步骤包括：用基本上平行的二维直狭缝图案遮蔽所述序列中每个均化的流量受控激光脉冲的一部分，以产生流量受控的狭缝定形细光束脉冲序列，所述直狭缝隔开一预定距离，并按平行于所述均化平面的一个方向线性延伸。
3.权利要求2的方法，其特征在于，所述移动步骤包括：基本上在所述预定的狭缝间隔距离内，按与每个所述流量受控的狭缝定形细光束脉冲垂直的方向，可控地顺序移动所述样本的所述相对位置，由此，将所述非晶硅薄膜样本加工成具有长晶粒且方向受控的晶体的多晶硅薄膜。
4.权利要求1的方法，其特征在于，
(a)所述遮蔽步骤包括：用基本上平行的二维直狭缝图案遮蔽所述序列中每个均化的流量受控激光脉冲的一部分，以产生流量受控的狭缝定形细光束脉冲序列，所述直狭缝具有一预定宽度，其隔开的预定距离小于所述预定宽度，并按平行于所述均化平面的一个方向线性延伸；以及
(b)所述移动步骤包括：按垂直于每个所述流量受控的狭缝定形细光束脉冲的方向，将所述样本的所述相对位置平移一段距离，所述距离小于所述预定宽度，由此，用两个激光脉冲将所述非晶体硅薄膜样本加工成具有长晶粒且方向受控的晶体的多晶硅薄膜。
5.权利要求4的方法，其特征在于，所述预定宽度约为4微米，所述预定间隔距离约为2微米，而所述平移距离约为3微米。
6.权利要求1的方法，其特征在于，所述遮蔽步骤包括：用基本上平行的二维直狭缝图案遮蔽所述序列中每个均化的流量受控激光脉冲的一部分，以产生流量受控的狭缝定形细光束脉冲序列，所述直狭缝隔开一预定距离，以及按与所述均化平面的一个方向基本上成45度角的方向线性延伸。
7.权利要求6的方法，其特征在于，所述移动步骤包括：基本上在所述预定狭缝距离内，按与所述均化平面的所述一个方向平行的方向，可控地顺序移动所述样本的所述相对位置，由此，将所述非晶硅薄膜样本加工成具有长晶粒且与薄硅膜的XY轴失去方向对准的方向受控晶体的多晶硅薄膜。
8.权利要求1的方法，其特征在于：
(a)所述遮蔽步骤包括：用基本上平行的二维直狭缝图案遮蔽所述序列中每个均化的流量受控激光脉冲的一部分，以产生流量受控的狭缝定形细光束脉冲序列，所述直狭缝具有一预定宽度，其预定间隔距离小于所述预定宽度；并按与所述均化平面一个方向基本上成45度角的方向线性延伸；以及
(b)所述移动步骤包括：按平行于所述均化平面的所述一个方向的方向，将所述样本的所述相对位置平移一段距离，所述距离小于所述预定宽度，由此用两个激光脉冲将所述非晶硅薄膜样本加工成具有长晶粒且与薄硅膜的XY轴失去方向对准的方向受控晶体的多晶硅薄膜。
9.权利要求8的方法，其特征在于，所述预定宽度约为4微米，所述预定间隔距离约为2微米，而所述平移距离约为3微米。
10.权利要求1的方法，其特征在于，所述遮蔽步骤包括：用二维相交直狭缝图案遮蔽所述序列中每个均化的流量受控激光脉冲的一部分，以产生流量受控的狭缝定形细光束脉冲序列，在所述直狭缝中，第一组直狭缝隔开第一预定间距，并按与所述均化平面的第一方向基本上成45度角的方向线性延伸；而第二组直狭缝隔开第二预定间距，并按与所述均化平面的第二方向基本上成45度角的方向线性延伸，而且基本上以90度角与所述第一组相交。
11.权利要求10的方法，所述移动步骤包括：基本上在所述第一预定狭缝间隔距离内，按与所述均化平面的所述第一方向平行的方向，可控地顺序移动所述样本的所述相对位置，由此，将所述非晶硅薄膜样本加工成具有大金刚石形晶体的多晶硅薄膜。
12.权利要求1的方法，其特征在于，所述遮蔽步骤包括：用二维锯齿形狭缝图案遮蔽所述序列中每个均化的流量受控激光脉冲的一部分，以产生流量受控的狭缝定形细光束脉冲序列，该锯齿形狭缝间隔一预定距离，并按平行于所述均化平面的一个方向线性延伸。
13.权利要求12的方法，其特征在于，基本上在所述预定狭缝间隔距离内，按与每个所述流量受控的狭缝定形细光束脉冲垂直的方向，可控地顺序移动所述样本的所述相对位置，由此，将所述非晶硅薄膜样本加工成具有大六边形晶体的多晶硅薄膜。
14，一种将非晶硅薄膜样本加工成多晶体硅薄膜的方法，其特征在于，该方法包括步骤：
(a)产生受激准分子激光脉冲序列；
(b)按预定平面均化所述序列中的每个激光脉冲；
(c)用基本上不透明的二维点图案遮蔽所述序列中的每个均化激光脉冲的一部分，以产生点状定形细光束脉冲序列；
(d)用所述点状定形细光束序列照射非晶硅薄膜样本，由此，将与所述定形细光束脉冲序列中的每个点图案细光束脉冲相应的部分熔化；以及
(e)通过按两条垂直轴更换移动方向，相对于每个所述点状定形细光束脉冲可控地顺序平移所述样本，平移距离小于所述样本的顶面横向生长距离，由此，将非晶体硅薄膜样本加工成多晶硅薄膜。
CNB008154503A 1999-09-03 2000-08-29 用顺序横向固化制造均匀大晶粒和晶粒边界位置受控的多晶硅薄膜半导体的方法 Expired - Fee Related CN1235268C (zh)

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