CN1466157A - Mim电容器之形成方法 - Google Patents
Mim电容器之形成方法 Download PDFInfo
- Publication number
- CN1466157A CN1466157A CNA02160889XA CN02160889A CN1466157A CN 1466157 A CN1466157 A CN 1466157A CN A02160889X A CNA02160889X A CN A02160889XA CN 02160889 A CN02160889 A CN 02160889A CN 1466157 A CN1466157 A CN 1466157A
- Authority
- CN
- China
- Prior art keywords
- layer
- mim capacitor
- formation method
- metal
- intermediate layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 40
- 238000000034 method Methods 0.000 title claims abstract description 25
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 16
- 230000003746 surface roughness Effects 0.000 claims abstract description 9
- 238000000151 deposition Methods 0.000 claims abstract description 8
- 239000004065 semiconductor Substances 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 3
- 150000004767 nitrides Chemical class 0.000 claims description 29
- 229910052751 metal Inorganic materials 0.000 claims description 26
- 239000002184 metal Substances 0.000 claims description 26
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 8
- 229910052718 tin Inorganic materials 0.000 claims description 8
- 238000000137 annealing Methods 0.000 claims description 7
- 229910052715 tantalum Inorganic materials 0.000 claims description 6
- 229910004166 TaN Inorganic materials 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 4
- 229910001882 dioxygen Inorganic materials 0.000 claims description 4
- 238000001465 metallisation Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 229910004143 HfON Inorganic materials 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 238000000059 patterning Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 82
- 230000004888 barrier function Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 238000012958 reprocessing Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000014509 gene expression Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910000906 Bronze Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000003542 behavioural effect Effects 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000002305 electric material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System the conductive layers comprising transition metals
Abstract
Description
Claims (7)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR36703/2002 | 2002-06-28 | ||
KR36703/02 | 2002-06-28 | ||
KR1020020036703A KR100818058B1 (ko) | 2002-06-28 | 2002-06-28 | 엠아이엠 캐패시터 형성방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1466157A true CN1466157A (zh) | 2004-01-07 |
CN100383898C CN100383898C (zh) | 2008-04-23 |
Family
ID=29774969
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB02160889XA Expired - Lifetime CN100383898C (zh) | 2002-06-28 | 2002-12-31 | Mim电容器之形成方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US6821839B2 (zh) |
KR (1) | KR100818058B1 (zh) |
CN (1) | CN100383898C (zh) |
TW (1) | TWI248214B (zh) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101160663B (zh) * | 2003-09-23 | 2010-10-27 | 飞思卡尔半导体公司 | 半导体器件 |
CN102623173A (zh) * | 2012-04-17 | 2012-08-01 | 电子科技大学 | 一种基于氧化铝有序纳米孔结构的电容器的制备方法 |
CN102760775A (zh) * | 2011-04-25 | 2012-10-31 | 南亚科技股份有限公司 | 电容器及其制作方法 |
CN103390542A (zh) * | 2013-07-25 | 2013-11-13 | 上海宏力半导体制造有限公司 | Mim电容器的形成方法 |
CN103972044A (zh) * | 2013-02-01 | 2014-08-06 | 中芯国际集成电路制造(上海)有限公司 | Mim电容器的制备方法以及半导体器件的制备方法 |
CN105122401A (zh) * | 2013-02-06 | 2015-12-02 | 罗姆股份有限公司 | 多层结构体、电容器元件及其制造方法 |
CN112909171A (zh) * | 2021-02-24 | 2021-06-04 | 上海华虹宏力半导体制造有限公司 | 一种改善mim电容的击穿电压的方法 |
CN114038832A (zh) * | 2022-01-07 | 2022-02-11 | 广州粤芯半导体技术有限公司 | 金属-绝缘体-金属电容器结构及形成方法 |
CN116723762A (zh) * | 2023-08-08 | 2023-09-08 | 荣芯半导体(淮安)有限公司 | Mim电容及其制备方法 |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100562493B1 (ko) * | 2002-12-10 | 2006-03-21 | 삼성전자주식회사 | 커패시터 유전막을 갖는 반도체 소자 및 그 제조방법 |
JP3822569B2 (ja) * | 2003-02-28 | 2006-09-20 | 株式会社東芝 | 半導体装置およびその製造方法 |
KR101044381B1 (ko) * | 2004-01-09 | 2011-06-29 | 매그나칩 반도체 유한회사 | 반도체 소자의 제조 방법 |
KR101044382B1 (ko) * | 2004-01-09 | 2011-06-27 | 매그나칩 반도체 유한회사 | 반도체 소자의 제조 방법 |
KR101026475B1 (ko) * | 2004-01-09 | 2011-04-01 | 매그나칩 반도체 유한회사 | 반도체 소자의 제조 방법 |
KR100630687B1 (ko) | 2004-07-05 | 2006-10-02 | 삼성전자주식회사 | 다층 유전막을 갖는 아날로그 반도체 소자의 커패시터 및그 형성방법 |
US7679124B2 (en) * | 2004-07-28 | 2010-03-16 | Samsung Electronics Co., Ltd. | Analog capacitor and method of manufacturing the same |
KR100688499B1 (ko) | 2004-08-26 | 2007-03-02 | 삼성전자주식회사 | 결정화 방지막을 갖는 유전막을 포함하는 mim 캐패시터및 그 제조방법 |
JP4461386B2 (ja) * | 2005-10-31 | 2010-05-12 | Tdk株式会社 | 薄膜デバイスおよびその製造方法 |
KR20090017040A (ko) * | 2007-08-13 | 2009-02-18 | 삼성전자주식회사 | 비휘발성 메모리 소자 및 그 제조방법 |
KR20090070447A (ko) * | 2007-12-27 | 2009-07-01 | 주식회사 동부하이텍 | 반도체 소자 및 그 제조 방법 |
US7977200B2 (en) | 2008-03-12 | 2011-07-12 | International Business Machines Corporation | Charge breakdown avoidance for MIM elements in SOI base technology and method |
US10419722B2 (en) | 2009-04-28 | 2019-09-17 | Whp Workflow Solutions, Inc. | Correlated media source management and response control |
US10565065B2 (en) | 2009-04-28 | 2020-02-18 | Getac Technology Corporation | Data backup and transfer across multiple cloud computing providers |
US9760573B2 (en) | 2009-04-28 | 2017-09-12 | Whp Workflow Solutions, Llc | Situational awareness |
US8363379B2 (en) * | 2010-08-18 | 2013-01-29 | International Business Machines Corporation | Altering capacitance of MIM capacitor having reactive layer therein |
JP5956106B2 (ja) * | 2010-08-27 | 2016-07-20 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
KR101895421B1 (ko) * | 2011-02-24 | 2018-09-07 | 삼성디스플레이 주식회사 | 배선, 박막 트랜지스터, 및 박막 트랜지스터 표시판과 이들을 제조하는 방법들 |
CN103346067B (zh) * | 2013-06-26 | 2017-02-22 | 上海华虹宏力半导体制造有限公司 | 半导体器件的形成方法、mim电容的形成方法 |
US10497773B2 (en) * | 2014-03-31 | 2019-12-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method to improve MIM device performance |
US9548349B2 (en) | 2014-06-25 | 2017-01-17 | International Business Machines Corporation | Semiconductor device with metal extrusion formation |
US9257498B1 (en) | 2014-08-04 | 2016-02-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Process to improve performance for metal-insulator-metal (MIM) capacitors |
US9793339B2 (en) | 2015-01-08 | 2017-10-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for preventing copper contamination in metal-insulator-metal (MIM) capacitors |
US10607779B2 (en) * | 2016-04-22 | 2020-03-31 | Rohm Co., Ltd. | Chip capacitor having capacitor region directly below external electrode |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60124396A (ja) * | 1983-12-09 | 1985-07-03 | 松下電器産業株式会社 | 薄膜発光素子 |
KR100275727B1 (ko) * | 1998-01-06 | 2001-01-15 | 윤종용 | 반도체 장치의 커패시터 형성방법 |
CN1087871C (zh) * | 1998-09-16 | 2002-07-17 | 张国飙 | 集成电路中的似电容元件 |
US6504202B1 (en) * | 2000-02-02 | 2003-01-07 | Lsi Logic Corporation | Interconnect-embedded metal-insulator-metal capacitor |
US6341056B1 (en) * | 2000-05-17 | 2002-01-22 | Lsi Logic Corporation | Capacitor with multiple-component dielectric and method of fabricating same |
US6566186B1 (en) * | 2000-05-17 | 2003-05-20 | Lsi Logic Corporation | Capacitor with stoichiometrically adjusted dielectric and method of fabricating same |
US6451667B1 (en) | 2000-12-21 | 2002-09-17 | Infineon Technologies Ag | Self-aligned double-sided vertical MIMcap |
KR100422597B1 (ko) * | 2001-11-27 | 2004-03-16 | 주식회사 하이닉스반도체 | 다마신 공정에 의해 형성된 캐패시터와 금속배선을 가지는반도체소자 |
-
2002
- 2002-06-28 KR KR1020020036703A patent/KR100818058B1/ko active IP Right Grant
- 2002-12-27 TW TW091137748A patent/TWI248214B/zh not_active IP Right Cessation
- 2002-12-30 US US10/331,433 patent/US6821839B2/en not_active Expired - Lifetime
- 2002-12-31 CN CNB02160889XA patent/CN100383898C/zh not_active Expired - Lifetime
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101160663B (zh) * | 2003-09-23 | 2010-10-27 | 飞思卡尔半导体公司 | 半导体器件 |
CN102760775A (zh) * | 2011-04-25 | 2012-10-31 | 南亚科技股份有限公司 | 电容器及其制作方法 |
CN102623173A (zh) * | 2012-04-17 | 2012-08-01 | 电子科技大学 | 一种基于氧化铝有序纳米孔结构的电容器的制备方法 |
CN102623173B (zh) * | 2012-04-17 | 2014-05-28 | 电子科技大学 | 一种基于氧化铝有序纳米孔结构的电容器的制备方法 |
CN103972044A (zh) * | 2013-02-01 | 2014-08-06 | 中芯国际集成电路制造(上海)有限公司 | Mim电容器的制备方法以及半导体器件的制备方法 |
CN105122401A (zh) * | 2013-02-06 | 2015-12-02 | 罗姆股份有限公司 | 多层结构体、电容器元件及其制造方法 |
CN103390542A (zh) * | 2013-07-25 | 2013-11-13 | 上海宏力半导体制造有限公司 | Mim电容器的形成方法 |
CN112909171A (zh) * | 2021-02-24 | 2021-06-04 | 上海华虹宏力半导体制造有限公司 | 一种改善mim电容的击穿电压的方法 |
CN114038832A (zh) * | 2022-01-07 | 2022-02-11 | 广州粤芯半导体技术有限公司 | 金属-绝缘体-金属电容器结构及形成方法 |
CN114038832B (zh) * | 2022-01-07 | 2022-04-05 | 广州粤芯半导体技术有限公司 | 金属-绝缘体-金属电容器结构及形成方法 |
CN116723762A (zh) * | 2023-08-08 | 2023-09-08 | 荣芯半导体(淮安)有限公司 | Mim电容及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
KR100818058B1 (ko) | 2008-03-31 |
US20040002188A1 (en) | 2004-01-01 |
TWI248214B (en) | 2006-01-21 |
TW200421625A (en) | 2004-10-16 |
US6821839B2 (en) | 2004-11-23 |
CN100383898C (zh) | 2008-04-23 |
KR20040001486A (ko) | 2004-01-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1466157A (zh) | Mim电容器之形成方法 | |
US7078785B2 (en) | Semiconductor device and making thereof | |
US5973911A (en) | Ferroelectric thin-film capacitor | |
CN1130801A (zh) | 电容器制造方法 | |
KR100883139B1 (ko) | 루테늄계 전극을 구비한 캐패시터 및 그 제조 방법 | |
CN1159763C (zh) | 具有高介电常数介质层的半导体器件电容器的制造方法 | |
US6555456B2 (en) | Method of forming iridium conductive electrode/barrier structure | |
US7122419B2 (en) | Capacitor and fabrication method thereof | |
KR100499429B1 (ko) | 마이크로일렉트로닉 구조물과 그의 제조 방법 및 용도 | |
CN1627515A (zh) | 半导体组件及其制作方法 | |
US20020086480A1 (en) | Method of manufacturing a capacitor in a semiconductor device | |
CN1630085A (zh) | 半导体器件的电容器及其制造方法 | |
US6818522B2 (en) | Method for forming capacitor of semiconductor device with RuTiN and RuTiO diffusion barrier | |
US7268038B2 (en) | Method for fabricating a MIM capacitor having increased capacitance density and related structure | |
US7501291B2 (en) | Process for fabricating an integrated circuit including a capacitor with a copper electrode | |
KR20210087642A (ko) | 커패시터 및 이를 포함하는 메모리 소자 | |
CN1624869A (zh) | 半导体器件及其形成方法 | |
CN1237606C (zh) | 金属电容器的制造方法 | |
KR100600283B1 (ko) | 커패시터의 합금 전극 및 그의 형성 방법 | |
KR100274748B1 (ko) | 반도체소자의 장벽 금속막 형성방법 | |
Aoyama et al. | Ru electrode deposited by sputtering in Ar/O2 mixture ambient | |
Ahn et al. | Pt/RuO2 hybrid bottom electrodes and their effects on the electrical properties of (Ba, Sr) TiO3 thin films | |
KR100268792B1 (ko) | 반도체 소자의 캐패시터 형성방법 | |
Pan et al. | Good High-Temperature Stability of $\hbox {TiN}/\hbox {Al} _ {2}\hbox {O} _ {3}/\hbox {WN}/\hbox {TiN} $ Capacitors | |
KR100376987B1 (ko) | 반도체소자의 캐패시터 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: MAGNACHIP CO., LTD. Free format text: FORMER OWNER: HYNIX SEMICONDUCTOR INC. Effective date: 20070615 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20070615 Address after: North Chungcheong Province Applicant after: Magnachip Semiconductor, Ltd. Address before: Gyeonggi Do, South Korea Applicant before: HYNIX SEMICONDUCTOR Inc. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20201022 Address after: Han Guozhongqingbeidao Patentee after: Key Foundry Co.,Ltd. Address before: Han Guozhongqingbeidao Patentee before: MagnaChip Semiconductor, Ltd. |
|
CX01 | Expiry of patent term | ||
CX01 | Expiry of patent term |
Granted publication date: 20080423 |