CN1484303A - 半导体装置及其制造方法 - Google Patents
半导体装置及其制造方法 Download PDFInfo
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- CN1484303A CN1484303A CNA031523986A CN03152398A CN1484303A CN 1484303 A CN1484303 A CN 1484303A CN A031523986 A CNA031523986 A CN A031523986A CN 03152398 A CN03152398 A CN 03152398A CN 1484303 A CN1484303 A CN 1484303A
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Abstract
Description
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JP2002223343 | 2002-07-31 | ||
JP2002223343A JP3779243B2 (ja) | 2002-07-31 | 2002-07-31 | 半導体装置及びその製造方法 |
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US (31) | US7301241B2 (zh) |
EP (6) | EP3208846B1 (zh) |
JP (1) | JP3779243B2 (zh) |
KR (1) | KR100917455B1 (zh) |
CN (1) | CN1294653C (zh) |
DE (1) | DE60331799D1 (zh) |
TW (1) | TWI223399B (zh) |
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2013
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- 2013-11-20 US US14/085,124 patent/US20140077392A1/en not_active Abandoned
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2014
- 2014-01-31 US US14/169,649 patent/US9105640B2/en not_active Expired - Lifetime
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2016
- 2016-10-12 US US15/291,593 patent/US9972531B2/en not_active Expired - Lifetime
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- 2018-04-11 US US15/950,201 patent/US10403543B2/en not_active Expired - Lifetime
Cited By (9)
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CN100463154C (zh) * | 2005-03-17 | 2009-02-18 | 台湾积体电路制造股份有限公司 | 接合垫结构及其形成方法 |
CN102468270A (zh) * | 2010-11-18 | 2012-05-23 | 海力士半导体有限公司 | 包括内部互连结构的半导体装置 |
CN102468270B (zh) * | 2010-11-18 | 2016-12-07 | 海力士半导体有限公司 | 包括内部互连结构的半导体装置 |
CN105762110A (zh) * | 2014-12-26 | 2016-07-13 | 台湾积体电路制造股份有限公司 | 具有使用不同互连层耦合的未对准金属线的互连结构、半导体芯片及布局 |
CN105762110B (zh) * | 2014-12-26 | 2019-06-21 | 台湾积体电路制造股份有限公司 | 具有使用不同互连层耦合的未对准金属线的互连结构、半导体芯片及布局 |
CN107611083A (zh) * | 2016-07-11 | 2018-01-19 | 爱思开海力士有限公司 | 半导体器件及其制造方法 |
JP2021034593A (ja) * | 2019-08-26 | 2021-03-01 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP7290513B2 (ja) | 2019-08-26 | 2023-06-13 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
CN115051128A (zh) * | 2020-03-23 | 2022-09-13 | 株式会社东芝 | 隔离器 |
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