CN1501170B - 光刻设备及制造器件的方法 - Google Patents
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Abstract
在沉浸式光刻设备中，在衬底台和投影透镜之间设置透明板，以防止在液体中产生流而在投影透镜上施加力，这样的力可能会扭曲参考系。该板通过致动器系统相对于参考系维持静止，该致动器系统响应于安装在参考系上的位置传感器。该透明板可以具有和液体相同的折射率。
Description
技术领域
本发明涉及一种光刻投影设备，其包括：
用于提供辐射投影束的辐射系统；
用于支撑构图装置的支撑结构，该构图装置用于根据所需的图案来对投影束构图；
用于保持衬底的衬底台；
用于将构图的束投影到衬底的目标部分上的投影系统；以及
用于用液体填充所述投影系统的最后元件和所述衬底之间的空间的液体供给系统。
背景技术
这里使用的术语“构图装置”应该被广义地理解为指这样一种装置，即，其可以用于使入射辐射束具有与要在衬底的目标部分中产生的图案相对应的截面图案；术语“光阀”也可以用于这方面。通常，所述图案与在目标部分产生的器件中的特定功能层例如集成电路或者其它器件相对应(如下所示)。这样的构图装置例子包括：
掩模。掩模的概念在光刻术中是已知的，其包括的掩模类型为，诸如二元掩模、交互相移掩模和衰减相移掩模，以及多种混合掩模类型。将这样的掩模放置在辐射束中使得施加到掩模上的辐射根据掩模上的图案来选择性地透射(在透射型掩模的情况下)或者反射(在反射型掩模的情况下)。在掩模的情况下，支撑结构通常为掩模台，其确保掩模可以保持在入射辐射束中的所需位置，且如果需要，其可以相对于该束移动。
可编程的镜阵列。这样的装置的一个例子是具有粘弹性控制层和反射表面的矩阵可寻址的表面。这样的设备的基本原理是(例如)反射表面的已寻址区域反射作为衍射光的入射光，而未寻址的区域反射作为非衍射光的入射光。使用适当的滤波器，所述非衍射光可以从反射光束中滤除，只留下衍射光；以这种方式，该束根据矩阵可寻址表面的寻址图案被构图。可编程的镜阵列的另一个实施例使用微小镜的矩阵结构，通过施加合适的局部电场或者通过使用压电致动装置，每个镜可以围绕一轴独立地倾斜。这些镜又是矩阵可寻址的，这样，这些寻址的镜将在和不寻址的镜不同的方向上反射入射辐射束；这样，该反射束根据矩阵可寻址的镜的寻址图案来构图。所需要的矩阵寻址可以使用合适的电子装置来实现。在上述的两种情况中，该构图装置可以包括一个或者多个可编程的镜阵列。更多有关这里涉及的镜阵列的信息可以通过，例如，从美国专利US5,296,891和US5,523,193和PCT专利申请WO98/38597和WO98/33096中收集，这些专利通过参考在此引用。在可编程的镜阵列的情况下，所述支撑结构可以体现为框架或者台，例如，其可以根据需要被固定或者可移动。
可编程LCD阵列。这样的结构的例子在美国专利US5,229,872中给出，其通过参考在此引用。如上所述，这种情况下的支撑结构可以体现为框架或者台，例如，其可以根据需要被固定或者可移动。
为了简化的目的，本文的剩余部分在某些位置可以特定地指包括掩模和掩模台的例子；然而，在这样的例子中讨论的普遍原理应该在上述的构图装置的更广泛的内容中体现。
光刻投影设备可以用于，例如集成电路(IC)的生产。在这样的情况下，构图装置可以产生与单个的IC层相应的电路图案，该图案可以在衬底(硅晶片)上的目标部分(例如，包括一个或者多个管芯)成像，该衬底已经涂覆有一层辐射敏感材料(抗蚀剂)。通常，单个晶片将包含相邻的目标部分的整个网络，这些目标部分通过投影系统一次一个地连续照射。在目前的设备中，通过掩模台上的掩模来实施构图，在两种不同类型的机器之间会产生差别。在一种类型的光刻投影设备中，每个目标部分通过一下子将整个掩模图案曝光在目标部分上来照射；这样的设备通常称为晶片步进器。在另一种设备中，通常称为步进-扫描设备，每个目标部分通过这样的方式来照射，即，在给定的基准方向(“扫描”方向)上，在投影束下逐渐地扫描掩模图案，同时平行于或者反向平行于该方向同步地扫描衬底台；通常，由于该投影系统具有放大因子M(通常小于1)，衬底台被扫描的速度V是掩模台被扫描的速度的M倍。关于这里描述的光刻设备的更多信息可以例如从US6,046,792中收集，其通过参考在此引用。
在使用光刻投影设备的生产过程中，图案(例如在掩模中的)成像在衬底上，该衬底至少部分覆盖有一层辐射敏感材料(抗蚀剂)。在该成像步骤之前，该衬底可以经历多种处理工艺，诸如涂底层、抗蚀剂涂覆和弱烘。在曝光以后，该衬底可以经历其它处理工艺，诸如曝光后烘烤(PEB)、显影、强烘以及成像的部件的测量/检测。这些处理工艺的排列为制作器件(例如IC)单层图案的基础，。然后，这样构图的层可以经历多种处理工艺，诸如蚀刻、离子注入(掺杂)、金属化、氧化、化学机械抛光等，所有这些意在完成一单层。如果要求几层，然后整个过程或者其变型对每一个新的层在制作时都必须要重复。最终，在衬底(晶片)上将呈现一批器件。然后，使用诸如切割或者锯割等技术使这些器件相互分开，由此，单个器件可以安装到载体上、连接到管脚等。关于这些处理工艺的更多信息可以从，例如由McGraw Hill出版公司于1997年出版的IBSN0-07-067250-4，由Petervan Zant撰写的“微芯片制作：一种半导体加工的实用指南”的第三版中获得，其通过参考在此引用。
为了简化，此后投影系统可称为“透镜”；然而，该术语应被广泛地理解为包含各种类型的投影系统，例如包括折射镜片、反射镜片和反射折射系统。该辐射系统还可以包括根据任意一种用于引导、成形或者控制辐射投影束的这些设计类型中进行操作的组件，这些组件也可以在下面共同地或者特殊地称为“透镜”。此外，该光刻设备可以是具有两个或者多个衬底台(和/或两个或者更多掩模台)的类型。在这样的“多级”装置中，附加的台可以平行使用，或者在使用一个或者多个其它台曝光时，在一个或者多个台上实施预备步骤。例如在US5,969,441和WO98/40791中描述了双级光刻设备，其作为参考在此引用。
已经提出了将光刻投影设备中的衬底浸入具有相对高的折射率的液体(例如水)中，这样在投影透镜的最后元件和衬底之间的空间中填充该液体。由于在该液体中曝光辐射具有更短的波长，这一点使得可以成像更小的结构。(该液体的效果可被认为是增加系统的有效NA。)
然而，当衬底台移动时，例如在扫描曝光时，在液体中，液体的粘性意味着在投影透镜上施加了力，从而该力施加到了参考系，其中设备中的所有位置传感器都与该参考系相连。为了精确定位该衬底和掩模台，该参考系必须为安装在其上的不同传感器提供特别牢固和稳定的参考。通过液体施加到参考系的力足够将该参考系扭曲到使基于其的不同位置测量无效。
发明内容
本发明的一个目的是提供一种光刻投影设备，其中，在衬底和投影系统之间的空间中填充液体，而参考系有效地与由衬底台的移动引起的干扰隔离。
根据本发明，在开始段落中说明的光刻设备中实现了这个目的和其它目的，其特征在于：
在所述投影系统和所述衬底台之间设置透明板，且与所述投影系统机械隔离；
用于保持所述透明板相对于所述投影系统基本固定的装置。
在该投影系统和衬底台之间的透明板将该投影系统与该衬底台隔离开，且防止力通过液体传送到投影透镜进而传送到参考系。因此，衬底台的移动不会干扰参考系和安装在其上的传感器。
在投影束的波长处该透明板的折射率最好与液体的折射率相同。这样，该透明板就不会引入任何不想要的光学效果。
该透明板最好这样成形和定位，即使得该液体被分为两部分，一部分在投影透镜和该板之间，另一部分在该板和衬底台之间，且两部分之间没有液体连通。通过这样的结构，可确保衬底台和投影透镜之间的完全隔离。
用于维持该透明板固定的装置最好包括一致动器系统，其可以包括用于测量透明板相对于投影系统位置的位置传感器和连接到所述位置传感器的致动器装置，用于将所述透明板相对于所述投影系统维持在预定的位置。该位置传感器最好安装在参考系上，该致动器装置最好安装在基座上，参考系与该基座机械隔离。该致动器装置也可以对提供到定位装置的用于衬底台的定位指令做出响应，以提供反馈控制，该反馈控制通过位置传感器提供作为反馈控制的附加或者替代的前馈控制。
根据本发明的又一方面，提供了一种制造器件的方法，其包括步骤为：
-提供一衬底，该衬底至少被一层辐射敏感材料部分地覆盖；
-使用辐射系统提供辐射投影束；
-使用构图装置来使该投影束的截面具有一定图案；
-将该构图的辐射束投影到该层辐射敏感材料的目标部分；以及
-提供液体来填充该衬底和在所述的投影步骤中使用的投影系统的最后元件之间的空间；
其特征在于：
在所述衬底和所述投影系统的最后元件之间设置与所述投影系统机械隔离的透明板，保持所述透明板相对于所述投影系统基本固定。
虽然在本文中可以特定地参考在IC生产中根据本发明的设备的应用，但是应当明确地理解，这样的设备具有很多其它可能的应用。例如，其可以在生产集成光学系统、磁畴存储器的引导和探测图案、液晶显示屏、薄膜磁头等中使用。本领域的普通技术人员应该理解，在这些可选择的应用情况下，在文中使用的任何术语“光栅”、“晶片”或者“管芯”都应该考虑分别被更通用的术语“掩模”、“衬底”和“目标部分”来代替。
在本文中，术语“辐射”和“束”用来包含所有类型的电磁辐射，包括紫外线辐射(例如，波长为365、248、193、157或者126nm)和EUV(远紫外线辐射，例如，具有的波长在5-20nm范围中)。
附图说明
现在通过参考附加的示意图，仅通过举例来描述本发明的实施例，其中：
图1描述了根据本发明的实施例的光刻投影设备；
图2描述了本发明的实施例的衬底台沉浸和投影透镜的隔离结构。
在这些图中，相应的标号表示相应的部件。
具体实施方式
实施例1
图1示意性地描述了根据本发明的实施例的光刻投影设备。该设备包括：
辐射系统Ex、IL，其用于提供辐射投影束PB(例如，DUV辐射)，在该特定的情况下，其还包括辐射源LA；
设置有掩模保持器的第一目标台(掩模台)MT，其用于保持掩模MA(例如，光栅)，且连接到第一定位装置，以使该掩模相对于元件PL精确定位；
设置有衬底保持器的第二目标台(衬底台)WT，其用于保持衬底W(例如，涂覆抗蚀剂的硅晶片)，且连接到第二定位装置，以使该衬底相对于元件PL精确定位；
投影系统(“透镜”)PL(例如，折射透镜系统)，用于将掩模MA的被照射的部分在衬底W的目标部分C(例如，包括一个或者多个管芯)上成像。
如这里所描述的，该设备是透射型的(例如，具有透射掩模)。然而，通常其还可以例如是反射型的(例如，具有反射掩模)。或者，该设备可以使用另一种类型的构图装置，诸如如上所述的可编程的镜阵列类型。
源LA(例如，受激准分子激光器)产生辐射束。该束直接供给到照明系统(照明器)IL，或者在例如穿过诸如束扩展器之类的调节装置Ex之后供给到照明系统(照明器)IL。该照明器IL可以包括调节装置AM，用于设置该束中的强度分布的外部和/或内部射线范围(通常分别称为б外部和б内部)。此外，该照明器IL通常包括各种其它组件，诸如积分器IN和聚光器CO。这样，施加到掩模MA上的束PB在其截面上具有所需的均匀性和强度分布。
关于图1应当这样理解，即源LA可以在光刻投影设备的外壳中(例如，当源LA是水银灯时是这种情况)，但是，源LA也可以远离光刻投影设备，源LA产生的辐射束被引导到设备中(例如，借助合适的导向镜)；当源LA是受激准分子激光器时，通常是后面这种情况。本发明和权利要求书包含这两种情况。
接下来束PB与保持在掩模台MT上的掩模MA相交。穿过该掩模MA之后，束PB通过透镜PL，该透镜PL将束PB聚焦到衬底W的目标部分C上。借助于第二定位装置(和干涉测量装置IF)，衬底台WT可以精确地移动，例如，使得在束PB的路径中定位不同的目标部分C。类似的，例如从掩模库以机械方式取回掩模MA以后或者在扫描期间，可以使用第一定位装置来使掩模MA相对于束PB的路径精确地定位。通常，目标台MT、WT的移动可以在长冲程模块(粗定位)和短冲程模块(精定位)的帮助下实现，它们在图1中没有明确地描述。然而，在晶片步进器的情况下(和步进-扫描设备相对)，掩模台MT可以只连接到短冲程致动器，或者可以被固定。
所述的设备可以在两种模式下使用：
在步进模式下，掩模台MT基本保持固定，整个掩模图案一下子(即，单次“闪光”)投影到目标部分C上。然后，衬底台WT在x和/或y方向上移动，使得不同的目标部分C可以被束PB照射；
在扫描模式下，基本应用相同的方案，除了给定的目标部分C不在单次“闪光”中曝光。取而代之的是，掩模台MT以速度v在给定的方向(所谓的“扫描方向”，例如y方向)上可移动，这样引起投影束PB在整个掩模图案上扫描；同时，衬底台WT以速度V＝Mv在相同或者相反方向上同时移动，其中M是透镜PL的放大倍数(通常，M＝1/4或者1/5)。在这种方式下，可以曝光相对大的目标部分C，而不需要降低分辨率。
图2详细的示出了衬底台。衬底台WT浸在由液体供应系统15供应的具有相对高的折射率的液体10中，例如水。该液体的效果是使投影束的辐射在液体中的波长比在空气或者真空中的波长要短，因此允许分辨更小的特征。众所周知，投影系统的分辨率的限制是确定的，特别是由投影束的波长和系统的数值孔径确定。液体的存在也可以被认为是增加有效的数值孔径。
透明板或者盘12定位在投影系统PL和衬底台WT之间，且其中也填充液体11，最好是和液体10一样的液体。这样，投影系统PL和衬底W之间的整个空间都充满液体，但是板12和投影系统PL之间的液体11与板12和衬底W之间的液体10相互分隔开。
透明板12最好至少在投影束和任何传感器束(例如通过透镜对准系统的束)的波长上具有和液体10、11相同的折射率，这些束可以穿过该板。这避免了光学副作用，否则这样的副作用将需要被定性和补偿。当然，不需要整个板都是透明的，而只需要那些束必须穿过的部分是透明的。
衬底台WT例如在箭头v所示的方向上通过第二定位装置PW移动，例如执行扫描曝光。衬底台的移动引起液体10中产生流动，该流动又在板12上施加力。为了防止这些力进一步传送到投影系统PL和参考系RF，透明板12相对于投影透镜PL通过致动器系统维持固定。由于板12是固定的，在液体11中没有干扰，因此没有力传送到投影系统PL。
用于维持板12固定的致动器系统包括致动器13，该致动器13在响应于由安装在参考系RF上的位置传感器14测量的板12的位置在反馈回路中受控制，和/或根据送到第二定位装置PW的定位指令在前馈回路中受控制。用于该致动器系统的控制系统可以实施抗噪音测量。干涉仪、电容性传感器以及编码器可以用作位置传感器，洛伦兹马达或者音圈马达可以用作致动器。
最好使用致动器而不是刚性连接到浴槽，其中衬底台WT浸在该浴槽中，这样好像在不过度增加浴槽中液体的容量的情况下，方便了成像后从衬底台WT上容易地取下衬底。
应当理解，因为力在通过流体10传送时有干扰和延迟，所以施加在板12上的力Fd不一定平行于衬底台WT的移动v或者和衬底台WT的运动v线性相关。这可能限制了前馈控制的作用。然而，重要的是，施加在板12上的力Fa足以抵消通过液体10传送的力Fd，这样在液体11中的干扰保持的足够低，使得传送到投影透镜的力在可接受的限度内。
应当注意到，在某些环境下，例如，如果衬底台移动的相对慢，且液体的粘度低，就没有必要使用致动器系统来维持板12固定，取而代之，板12可以固定到，例如基座或者与参考系隔离的设备的其它固定部分。
本发明的特定实施例已经在上面描述，应当理解，本发明可以不同于所述的来实践。本说明书不是意在限制本发明。
Claims (9)
1.一种光刻投影设备，其包括：
用于提供辐射投影束的辐射系统；
用于支撑构图装置的支撑结构，该构图装置用于根据所需的图案来对投影束构图；
用于保持衬底的衬底台；
用于将构图的束投影到衬底的目标部分上的投影系统；以及
用于用液体填充所述投影系统在沿辐射投影束的光路的方向上的最后元件和所述衬底之间的空间的液体供给系统；其特征在于：
在所述投影系统和所述衬底台之间设置透明板，且与所述投影系统机械隔离；
用于维持所述透明板相对于所述投影系统固定的致动器系统。
2.根据权利要求1所述的设备，其特征在于：所述透明板在投影束的波长下具有的折射率与在该波长下该液体的折射率基本相同。
3.根据权利要求1或者2所述的设备，其特征在于：所述透明板是这样成形和定位，即使得该液体被分为两个部分，一部分在所述投影系统的最后元件和该板之间，另一部分在该板和该衬底台之间，且在该两部分之间没有液体连通。
4.根据权利要求1所述的设备，其特征在于：所述致动器系统包括用于测量该透明板相对于该投影系统的位置的位置传感器，以及与所述位置传感器相连接的致动器。
5.根据权利要求4所述的设备，其特征在于：所述位置传感器安装在参考系上，该参考系也支撑所述投影系统。
6.根据权利要求5所述的设备，其特征在于：所述致动器系统的致动器安装在基座上，该参考系与该基座机械隔离。
7.根据权利要求4到6中的任何一项所述的设备，其特征在于：所述致动器系统以反馈的方式控制。
8.根据权利要求4到6中的任何一项所述的设备，其特征在于：所述致动器系统以前馈的方式控制。
9.一种利用如权利要求1所述的光刻投影设备制造器件的方法，其包括的步骤为：
提供一衬底，该衬底被一层辐射敏感材料至少部分地覆盖；
使用辐射系统提供辐射投影束；
使用构图装置使该投影束的截面具有一定图案；
将该构图的辐射束投影到该层辐射敏感材料的目标部分；以及
提供液体来填充该衬底和在所述的投影步骤中使用的投影系统在沿辐射投影束的光路的方向上的最后元件之间的空间；
其特征在于：
在所述衬底和所述投影系统的最后元件之间设置与所述投影系统机械隔离的透明板，利用致动器系统可致动地保持所述透明板相对于所述投影系统固定。
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-
2003
- 2003-11-11 SG SG200306776-6A patent/SG131766A1/en unknown
- 2003-11-17 KR KR1020030081191A patent/KR100588125B1/ko not_active IP Right Cessation
- 2003-11-17 CN CN2003101161572A patent/CN1501170B/zh not_active Expired - Lifetime
- 2003-11-17 TW TW092132134A patent/TWI238295B/zh not_active IP Right Cessation
- 2003-11-17 JP JP2003386748A patent/JP3978421B2/ja not_active Expired - Fee Related
- 2003-11-18 US US10/715,116 patent/US7009682B2/en not_active Expired - Lifetime
-
2005
- 2005-12-21 US US11/316,617 patent/US7119881B2/en not_active Expired - Fee Related
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Also Published As
| Publication number | Publication date |
|---|---|
| KR100588125B1 (ko) | 2006-06-09 |
| US7119881B2 (en) | 2006-10-10 |
| US7009682B2 (en) | 2006-03-07 |
| SG131766A1 (en) | 2007-05-28 |
| US20040114117A1 (en) | 2004-06-17 |
| TW200421043A (en) | 2004-10-16 |
| TWI238295B (en) | 2005-08-21 |
| KR20040044145A (ko) | 2004-05-27 |
| US20060098180A1 (en) | 2006-05-11 |
| JP2004172621A (ja) | 2004-06-17 |
| JP3978421B2 (ja) | 2007-09-19 |
| CN1501170A (zh) | 2004-06-02 |
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