CN1518091A - 金属镶嵌的制造方法及其结构 - Google Patents

金属镶嵌的制造方法及其结构 Download PDF

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CN1518091A
CN1518091A CNA2003101036996A CN200310103699A CN1518091A CN 1518091 A CN1518091 A CN 1518091A CN A2003101036996 A CNA2003101036996 A CN A2003101036996A CN 200310103699 A CN200310103699 A CN 200310103699A CN 1518091 A CN1518091 A CN 1518091A
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perforate
manufacture method
damascene
silicon carbide
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CN1290173C (zh
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吴振诚
卢永诚
陈盈淙
章勋明
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Abstract

一种金属镶嵌的制造方法及其结构，此制造方法先于一基础层上方依序沉积一蚀刻终止层与一介电层，然后于介电层与蚀刻终止层中形成一开孔，再于介电层表面与开孔侧边及底部沉积一碳化硅层，最后于开孔中形成一金属层。本发明的碳化硅层可避免金属层扩散至介电层，从而降低漏电流，并能提高与半导体组件可靠度相关的时依性介电崩溃时间与改善偏压温度冲击性能。

Description

金属镶嵌的制造方法及其结构
技术领域
本发明涉及一种金属镶嵌(metal damascene)的制造方法及其结构，特别是涉及一种应用于半导体组件内联机(interconnect)中的金属镶嵌的制造方法及其结构。
背景技术
半导体产品通过金属导线连接至半导体组件，通过施加电压而控制每一半导体组件的作动状态。传统上，以金属镶嵌做为金属导线，请参照图1A至图1D，其为现有技术制作金属镶嵌的剖面结构流程示意图。
首先，如图1A所示，于一半导体基础层10上方依序形成有一蚀刻终止层11、一介电层12与一介电材料抗反射层13。
图1B中，利用微影制程与蚀刻技术，于介电材料抗反射层13、介电层12与蚀刻终止层11中形成一开孔14。
图1C中，于介电材料抗反射层13表面与开孔14侧边及底部沉积一阻障层15，阻障层15较常使用的材料为氮化钽。然后，于阻障层15表面与开孔14中沉积一金属层16，金属层16较常使用的材料为铜。
如图1D所示，再进行化学机械研磨，而停止于介电层12，则完成金属镶嵌的制作。
然而，如图2所示，其为图1D中区域17的放大图，为了提高半导体产品效能，当介电层12使用多孔性的低介电常数材料(例如：多孔性SiLK、Aerogel或Xerogel)时，多孔性低介电常数材料的介电层12的结构特性使得经过蚀刻后形成的开孔14的侧边并非为一平坦的表面，致使后续沉积的阻障层15厚度无法均匀一致，阻障层15厚度较薄的区域18无法完全避免金属层16扩散至介电层12，不仅产生漏电流，且缩短与组件可靠度相关的时依性介电崩溃(time-dependent dielectric breakdown，TDDB)时间与劣化偏压温度冲击(bias temperature stress，BTS)性能。
发明内容
本发明的目的在于提供一种金属镶嵌的制作方法及其结构，避免半导体组件造成漏电流。
本发明的另一目的在于提供一种金属镶嵌的制作方法及其结构，用来维持时依性介电崩溃时间。
本发明的又一目的在于提供一种金属镶嵌的制作方法及其结构，用来改善偏压温度冲击性能。
本发明的再一目的在于提供一种金属镶嵌的制作方法及其结构，用来提高半导体产品的产能。
根据上述目的，本发明提供一种金属镶嵌的制造方法，此制造方法先于一基础层上方依序沉积一蚀刻终止层与一介电层，然后于介电层与蚀刻终止层中形成一开孔，再于介电层表面与开孔侧边及底部沉积一碳化硅层，最后于开孔中形成一金属层。
本发明还提供一种金属镶嵌的结构，此结构包括有一基础层，一位于基础层上方的蚀刻终止层，一位于蚀刻终止层上方的介电层，一位于介电层与蚀刻终止层中的开孔，一位于介电层表面与开孔侧边及底部的碳化硅层，以及一位于开孔中的金属层。
上述金属层的材料可以为铜，介电层为多孔性的低介电常数介电层(例如多孔性SiLK、Aerogel或Xerogel)，且较佳碳化硅层的厚度为介于100～200。
本发明的有益效果在于：该碳化硅层可避免金属层扩散至介电层，从而降低漏电流，并能提高与组件可靠度相关的时依性介电崩溃时间与改善偏压温度冲击性能。
附图说明
图1A至图1D是现有技术制作金属镶嵌的剖面结构流程示意图；
图2是图1D中区域17的放大图；以及
图3A至图3E是本发明制作金属镶嵌的剖面结构流程示意图。
具体实施方式
请参照图3A至图3E，其为本发明制作金属镶嵌的剖面结构流程示意图。首先，如图3A所示，于一半导体基础层30上方依序沉积有一蚀刻终止层31、一介电层32与一有机抗反射层33。其中，蚀刻终止层31的材料可以为氮化硅或碳化硅，较佳者，蚀刻终止层31的厚度为400。本发明的介电层32的材料可以为多孔性的低介电常数介电层，例如多孔性SiLK、Aerogel或Xerogel，尤其对于使用多孔性的低介电常数介电层而言，本发明技术能克服前述现有的缺陷。其中，有机抗反射层33用来避免曝光时光线反射致使分辨率下降，当然，本发明也不是绝对必要沉积有机抗反射层。
图3B中，于有机抗反射层33、介电层32与蚀刻终止层31中形成一开孔34。其中，形成开孔34可以先沉积一光阻层(图未示)于有机抗反射层33上方，再以微影制程定义光阻层图案，然后以图案化光阻层为罩幕进行蚀刻，而停止于蚀刻终止层31。最后，再以图案化光阻层为罩幕进行蚀刻，而停止于基础层30。
图3C中，加热移除有机抗反射层33，例如可于一化学气相沉积机台中加热移除有机抗反射层33。
图3D中，于介电层32表面与开孔34侧边及底部沉积一碳化硅层35，再于碳化硅层35表面与开孔34中沉积一金属层36。其中，以化学气相沉积方式沉积碳化硅层35(可以与前述加热移除有机抗反射层33的同一化学气相沉积机台中进行沉积碳化硅层35)，较佳者，碳化硅层的厚度为介于100～200。其中，沉积金属层36可以先于碳化硅层35表面与开孔34侧边及底部沉积一钽层(图未示)，用来增加附着力，再通过溅镀方式于钽层表面与开孔34侧边及底部形成有金属层36的沉积晶种，然后进行电化学电镀，于钽层表面与开孔34侧边及底部沉积金属层36。其中，金属层36的材料可以为铜或其它导电性良好且沉积与蚀刻容易的材料。
最后，如图3E所示，再化学机械研磨金属层36而停止于碳化硅层35，则完成金属镶嵌的制作。
本发明以碳化硅层取代现有技术中的阻障层，碳化硅层的沉积能力优于现有技术中的阻障层，从而降低漏电流，并能提高与半导体组件可靠度相关的时依性介电崩溃时间与改善偏压温度冲击性能。
另外，本发明(图3E)并无研磨移除碳化硅层35，保留碳化硅层35也得以降低漏电流，而现有技术(图1D)必须研磨移除部分阻障层15，且又得研磨移除介电材料抗反射层13。本发明的有机抗反射层通过加热即可移除，并非绝对必要通过研磨移除，因此本发明可以将加热移除有机抗反射层33(图3C)与沉积碳化硅层35(图3D)于同一化学气相沉积机台中进行，因此，本发明于制作金属镶嵌上更能减少制程时间，提高产能。

Claims (32)

1.一种金属镶嵌的制造方法，该制造方法至少包括下列步骤：
于一基础层上方依序沉积一蚀刻终止层与一介电层；
于该介电层与该蚀刻终止层中形成一开孔；其特征在于：该方法还包括以下步骤：
于该介电层表面与该开孔侧边及底部沉积一碳化硅层；以及
于该开孔中形成一金属层。
2.根据权利要求1所述的金属镶嵌的制造方法，其特征在于：该金属层的材料为铜。
3.根据权利要求1所述的金属镶嵌的制造方法，其特征在于：该蚀刻终止层的材料选自氮化硅与碳化硅之一。
4.根据权利要求1所述的金属镶嵌的制造方法，其特征在于：该蚀刻终止层的厚度为400。
5.根据权利要求1所述的金属镶嵌的制造方法，其特征在于：该介电层的材料为低介电常数介电层。
6.根据权利要求5所述的金属镶嵌的制造方法，其特征在于：该低介电常数介电层为多孔性的低介电常数介电层。
7.根据权利要求6所述的金属镶嵌的制造方法，其特征在于：该多孔性的低介电常数介电层选自多孔性SiLK、Aerogel、Xerogel群组之一。
8.根据权利要求1所述的金属镶嵌的制造方法，其特征在于：于沉积该介电层于该基础层上方之后更包括沉积一有机抗反射层于该介电层上方的步骤。
9.根据权利要求8所述的金属镶嵌的制造方法，其特征在于：其中形成该开孔至少包括下列步骤：
沉积一光阻层于该有机抗反射层上方；
以微影制程定义该光阻层图案；
以该图案化光阻层为罩幕，进行蚀刻，而停止于该蚀刻终止层；以及
以该图案化光阻层为罩幕，进行蚀刻，而停止于该基础层。
10.根据权利要求9所述的金属镶嵌的制造方法，其特征在于：形成该开孔之后更包括一加热移除该有机抗反射层的步骤。
11.根据权利要求1所述的金属镶嵌的制造方法，其特征在于：该碳化硅层的厚度为介于100～200。
12.根据权利要求1所述的金属镶嵌的制造方法，其特征在于：于该开孔中形成该金属层至少包括下列步骤：
于该碳化硅层表面与该开孔中沉积该金属层；以及
化学机械研磨该金属层而停止于该碳化硅层。
13.根据权利要求12所述的金属镶嵌的制造方法，其特征在于：于该碳化硅层表面与该开孔中沉积该金属层至少包括下列步骤：
于该碳化硅层表面与该开孔侧边及底部沉积一钽层；
以溅镀方式于该钽层表面与该开孔侧边及底部形成有该金属的沉积晶种；以及
进行电化学电镀，于该钽层表面与该开孔侧边及底部沉积该金属层。
14.一种金属镶嵌的制造方法，其应用于上方依序形成有一介电层与一有机抗反射层的一基础层上，该介电层与该蚀刻终止层中具有一开孔，其特征在于：该制造方法至少包括下列步骤：
加热移除该有机抗反射层；
于该介电层表面与该开孔侧边及底部沉积一碳化硅层；以及
于该开孔中形成一金属层。
15.根据权利要求14所述的金属镶嵌的制造方法，其特征在于：该金属层的材料为铜。
16.根据权利要求14所述的金属镶嵌的制造方法，其特征在于：该介电层的材料为低介电常数介电层。
17.根据权利要求16所述的金属镶嵌的制造方法，其特征在于：该低介电常数介电层为多孔性的低介电常数介电层。
18.根据权利要求17所述的金属镶嵌的制造方法，其特征在于：该多孔性的低介电常数介电层选自多孔性SiLK、Aerogel、Xerogel群组之一。
19.根据权利要求14所述的金属镶嵌的制造方法，其特征在于：该碳化硅层的厚度为介于100～200。
20.根据权利要求14所述的金属镶嵌的制造方法，其特征在于：于该开孔中形成该金属层至少包括下列步骤：
于该碳化硅层表面与该开孔中沉积该金属层；以及
化学机械研磨该金属层而停止于该碳化硅层。
21.根据权利要求20所述的金属镶嵌的制造方法，其特征在于：于该碳化硅层表面与该开孔中沉积该金属层至少包括下列步骤：
于该碳化硅层表面与该开孔侧边及底部沉积一钽层；
以溅镀方式于该钽层表面与该开孔侧边及底部形成有该金属的沉积晶种；以及
进行电化学电镀，于该钽层表面与该开孔侧边及底部沉积该金属层。
22.一种金属镶嵌的结构，至少包括一基础层、一位于该基础层上方的蚀刻终止层、一位于该蚀刻终止层上方的介电层，一位于该介电层与该蚀刻终止层中的开孔，其特征在于：该结构还包括一位于该介电层表面与该开孔侧边及底部的碳化硅层以及一位于该开孔中的金属层。
23.根据权利要求22所述的金属镶嵌的结构，其特征在于：该金属层的材料为铜。
24.根据权利要求22所述的金属镶嵌的结构，其特征在于：该蚀刻终止层的材料选自氮化硅与碳化硅之一。
25.根据权利要求22所述的金属镶嵌的结构，其特征在于：该蚀刻终止层的厚度为400。
26.根据权利要求22所述的金属镶嵌的结构，其特征在于：该介电层的材料为低介电常数介电层。
27.根据权利要求26所述的金属镶嵌的结构，其特征在于：该低介电常数介电层为多孔性的低介电常数介电层。
28.根据权利要求27所述的金属镶嵌的结构，其特征在于：该多孔性的低介电常数介电层选自多孔性SiLK、Aerogel、Xerogel群组之一。
29.根据权利要求22所述的金属镶嵌的结构，其特征在于：该碳化硅层的厚度为介于100～200。
30.根据权利要求22所述的金属镶嵌的结构，其特征在于：于该碳化硅层表面与该开孔侧边及底部更包括有一钽层。
31.根据权利要求22所述的金属镶嵌的结构，其特征在于：该金属层的顶部与该碳化硅层的顶部切齐，而使该金属镶嵌的结构具有一平坦化的表面。
32.根据权利要求22所述的金属镶嵌的结构，其特征在于：该碳化硅层避免该金属层扩散至该介电层。
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