CN1524199A - 相移光刻掩模的设计和布局 - Google Patents
相移光刻掩模的设计和布局 Download PDFInfo
- Publication number
- CN1524199A CN1524199A CNA028115511A CN02811551A CN1524199A CN 1524199 A CN1524199 A CN 1524199A CN A028115511 A CNA028115511 A CN A028115511A CN 02811551 A CN02811551 A CN 02811551A CN 1524199 A CN1524199 A CN 1524199A
- Authority
- CN
- China
- Prior art keywords
- phase shifter
- phase
- mask
- limit
- layout
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70558—Dose control, i.e. achievement of a desired dose
Abstract
Description
Claims (32)
Applications Claiming Priority (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US29678801P | 2001-06-08 | 2001-06-08 | |
US60/296,788 | 2001-06-08 | ||
US30414201P | 2001-07-10 | 2001-07-10 | |
US60/304,142 | 2001-07-10 | ||
US32568901P | 2001-09-28 | 2001-09-28 | |
US60/325,689 | 2001-09-28 | ||
US10/085,759 US6787271B2 (en) | 2000-07-05 | 2002-02-28 | Design and layout of phase shifting photolithographic masks |
US10/085,759 | 2002-02-28 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN 200910171747 Division CN101726988B (zh) | 2001-06-08 | 2002-06-07 | 相移光刻掩模的设计和布局 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN1524199A true CN1524199A (zh) | 2004-08-25 |
Family
ID=27491982
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA028115511A Pending CN1524199A (zh) | 2001-06-08 | 2002-06-07 | 相移光刻掩模的设计和布局 |
Country Status (6)
Country | Link |
---|---|
US (7) | US6787271B2 (zh) |
EP (1) | EP1393130B1 (zh) |
JP (1) | JP4351906B2 (zh) |
CN (1) | CN1524199A (zh) |
AU (1) | AU2002349082A1 (zh) |
WO (1) | WO2002101468A2 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110446980A (zh) * | 2017-03-21 | 2019-11-12 | Asml荷兰有限公司 | 对象识别和比较 |
Families Citing this family (93)
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2002
- 2002-02-28 US US10/085,759 patent/US6787271B2/en not_active Expired - Lifetime
- 2002-06-07 WO PCT/US2002/017668 patent/WO2002101468A2/en active Application Filing
- 2002-06-07 EP EP02778939.5A patent/EP1393130B1/en not_active Expired - Lifetime
- 2002-06-07 JP JP2003504166A patent/JP4351906B2/ja not_active Expired - Lifetime
- 2002-06-07 CN CNA028115511A patent/CN1524199A/zh active Pending
- 2002-06-07 AU AU2002349082A patent/AU2002349082A1/en not_active Abandoned
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- 2004-09-10 US US10/938,653 patent/US7348108B2/en not_active Expired - Lifetime
- 2004-09-10 US US10/939,104 patent/US7435513B2/en not_active Expired - Lifetime
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN110446980A (zh) * | 2017-03-21 | 2019-11-12 | Asml荷兰有限公司 | 对象识别和比较 |
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US6861204B2 (en) | 2005-03-01 |
US20020122994A1 (en) | 2002-09-05 |
US8566757B2 (en) | 2013-10-22 |
WO2002101468A3 (en) | 2003-11-13 |
US7739649B2 (en) | 2010-06-15 |
US6787271B2 (en) | 2004-09-07 |
JP2005517200A (ja) | 2005-06-09 |
US7312003B2 (en) | 2007-12-25 |
US20100050149A1 (en) | 2010-02-25 |
US20040175634A1 (en) | 2004-09-09 |
WO2002101468A2 (en) | 2002-12-19 |
US20050031972A1 (en) | 2005-02-10 |
US20040185351A1 (en) | 2004-09-23 |
US7348108B2 (en) | 2008-03-25 |
JP4351906B2 (ja) | 2009-10-28 |
EP1393130B1 (en) | 2013-08-07 |
EP1393130A2 (en) | 2004-03-03 |
US7435513B2 (en) | 2008-10-14 |
US20050031971A1 (en) | 2005-02-10 |
AU2002349082A1 (en) | 2002-12-23 |
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