CN1574403A - 光半导体装置及其制造方法 - Google Patents

光半导体装置及其制造方法 Download PDF

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Publication number
CN1574403A
CN1574403A CNA2004100318699A CN200410031869A CN1574403A CN 1574403 A CN1574403 A CN 1574403A CN A2004100318699 A CNA2004100318699 A CN A2004100318699A CN 200410031869 A CN200410031869 A CN 200410031869A CN 1574403 A CN1574403 A CN 1574403A
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Prior art keywords
optical semiconductor
semiconductor device
sealing resin
terminal
covered
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CNA2004100318699A
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CN100397664C (zh
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龟山工次郎
三田清志
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Northeast Sanyo Semi-Conductive Co Ltd
Sanyo Electric Co Ltd
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Northeast Sanyo Semi-Conductive Co Ltd
Sanyo Electric Co Ltd
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Publication of CN1574403A publication Critical patent/CN1574403A/zh
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Abstract

一种光半导体装置及其制造方法，其可提高耐湿性等。本发明的光半导体装置(10A)包括：光半导体元件(11)，包含受光元件或发光元件的电路部(21)形成于其表面；端子部(17)，其设于所述光半导体元件(11)的背面，而且和所述电路部(21)电连接；被覆层(12)，其被覆所述光半导体元件(11)的表面而且由透明材料构成；密封树脂(16)，其被覆被覆层(12)及光半导体元件(11)的侧面。电路部(21)和端子部(17)也可以由再配线(15)连接。

Description

光半导体装置及其制造方法
技术领域
本发明涉及一种内装具有受光部或发光部的光半导体元件的光半导体装置。
背景技术
为了在便携式电话、便携式计算机等中被采用，现有设置于电子仪器中的电路装置，要求小型化、薄型化、轻量化。例如以半导体装置为例说明电路装置，一般的半导体装置最近开发有称作CSP(芯片尺寸封装)的和芯片尺寸相等的晶片级CSP、或比芯片尺寸还大一些尺寸的CSP。
图7显示采用玻璃环氧树脂衬底65作为支承衬底的比芯片尺寸还大一些尺寸的CSP66(参照专利文献1)。下面说明晶体管芯片T安装在玻璃环氧树脂衬底65上的实例。
在玻璃环氧树脂衬底65的表面上形成有第一电极67、第二电极68和连接垫69，在背面形成第一背面电极70和第二背面电极71。并且介由通孔TH，所述第一电极67和第一背面电极70、第二电极68和第二背面电极71电连接。另外，在连接垫69上固定有所述裸露的晶体管芯片T，晶体管发射极和第一电极67介由金属细线72连接，晶体管的基极和第二电极68介由金属细线72连接。而且，玻璃环氧树脂衬底65上设有树脂层73以被覆晶体管芯片T。
所述CSP66采用玻璃环氧树脂衬底65，但和晶片级CSP不同，具有由芯片T到外部连接用背面电极70、71的延伸结构简单且制造成本低的优点。
专利文献1：特开2001-339151号公报(第一页、第一图)
发明内容
但是在现有例所示的CSP66中，被覆晶体管芯片T的树脂层73只接触玻璃环氧树脂衬底65的表面的部分。因而在CSP66的安装工序或使用状态下，水分会由外部侵入玻璃环氧树脂衬底65和树脂层73的界面，这导致CSP66的耐湿性降低。另外，由于和上述相同的原因，玻璃环氧树脂衬底65和树脂层73的粘合力弱。
本发明是为了解决上述问题而开发的，其主要目的在于提供一种提高耐湿性等的光半导体装置和其制造方法。
本发明的光半导体装置的特征在于，其包括：光半导体元件，包含受光元件或发光元件的电路部形成于其表面；端子部，其设于所述光半导体元件的背面，而且和所述电路部电连接；被覆层，其被覆所述光半导体元件的表面而且由透明材料构成；密封树脂，其被覆所述光半导体元件的侧面。
本发明的光半导体装置的制造方法的特征在于，其包括：准备表面上形成有包含受光元件或发光元件的多个电路部的晶片的工序；形成分离槽，使所述晶片由所述晶片的背面分离，分离成各个光半导体元件的工序；在所述光半导体元件的背面设置和所述电路部电连接的端子部的工序；形成密封树脂，使其至少填充所述分离槽的工序；沿所述分离槽分离成各个光半导体装置的工序。
附图说明
图1是说明本发明的光半导体装置的剖面图(A)、剖面图(B)；
图2是说明本发明的光半导体装置的制造方法的平面图(A)、剖面图(B)；
图3是说明本发明的光半导体装置的制造方法的平面图(A)、剖面图(B)；
图4是说明本发明的光半导体装置的制造方法的剖面图(A)、剖面图(B)；
图5是说明本发明的光半导体装置的制造方法的剖面图(A)、剖面图(B)、剖面图(C)；
图6是说明本发明的光半导体装置的制造方法的剖面图(A)、剖面图(B)，剖面图(C)、剖面图(D)；
图7是说明现有的光半导体装置的剖面图。
具体实施方式
参照图1，说明本发明的光半导体装置10的结构。图1(A)是光半导体装置10A的剖面图，图1(B)是另一实施方式的光半导体装置10B的剖面图。
参照图1(A)，本发明的光半导体装置10A包括：含有受光元件或发光元件的电路部21形成于其表面上的光半导体元件11；设在光半导体元件11的背面，而且和电路部21电连接的端子部17；被覆光半导体元件11的表面，而且由透明材料构成的被覆层12；被覆光半导体元件11侧面的密封树脂16。下面详细说明上述各要素。
被覆层12介由粘接树脂13粘贴在光半导体元件11的表面上，保护形成于光半导体元件11表面上的电路部21，。被覆层12的材料采用相对于输入到光半导体元件11或由光半导体元件11输出的光透明的材料。例如光半导体元件11是感知可视光线的元件，则将相对可视光线具有透明性的材料用作被覆层12。具体地说，可以使用玻璃或丙烯板等作为被覆层12。另外，光半导体元件11是CCD图像传感器等摄像元件时，可以附加滤光片等。
光半导体元件11可以采用受光元件或发光元件。受光元件可以采用CCD(电荷耦合器件)图像传感器或CMOS(互补金属氧化物半导体)图像传感器等固态摄像元件，或光电二极管或光敏晶体管等光传感器作为光半导体元件11。发光元件可以采用发光二极管或半导体激光器等作为半导体元件11。
再配线15是使光半导体元件11的电路部21和在光半导体元件11的背面设置的端子部17电连接的导电布线图案。在此，绕过光半导体元件11的侧面部，使电路部21和端子部17电连接。再配线15的材料由以Cu为主要材料的金属、以Al为主要材料的金属或者Au、导电膏等的合金构成。再配线15表面利用绝缘层被覆，使其和光半导体15绝缘。
光半导体元件11的侧面形成倾斜面，具体地说，形成有电路部21的光半导体元件11的主面和侧面部的角度α形成锐角。这样使向光半导体元件11的侧面部形成再配线15容易。在制造方法的说明中后述其详。
密封树脂16被覆光半导体元件11和被覆层12的侧面部。光半导体元件11的背面也利用密封树脂16被覆，凸点电极18形成在从规定位置的密封树脂16露出的端子部17上。由此被覆层12露出至进行光半导体元件11受光或发光的光半导体装置10A的面上，其它面由密封树脂16形成。为了提高机械强度和耐湿性，密封树脂16可以采用混入了无机填料的遮光性树脂。无机填料例如可以采用铝化合物、钙化合物、钾化合物、镁化合物以及硅化合物。另外，用于密封树脂16的树脂可以全部采用热塑性树脂或热固性树脂两种。本发明可以适用的热塑性树脂例如有：ABS树脂、聚丙烯、聚乙烯、聚苯乙烯、丙烯酸树脂、聚对苯二甲酸乙二醇酯、聚亚苯基醚、尼龙、聚酰胺、聚碳酸酯、聚缩醛、聚对苯二甲酸丁二醇酯、聚亚苯基硫、聚醚醚酮、液晶聚合物、氟树脂、氨基甲酸酯树脂以及弹性体。本发明可以使用的热固性树脂例如有：尿素、苯酚、蜜胺、呋喃、醇酸、不饱和聚酯、邻苯二甲酸二烯丙酯、环氧树脂、硅树脂以及聚氨基甲酸酯。
粘接树脂13由环氧树脂等构成，具有粘接被覆层12和光半导体元件11的作用。而且，为了透过光半导体元件11发光或受光的光，粘接树脂13具有和被覆层12相同程度的透明性。粘接树脂13也可以采用粘接带。也可以只在周边部形成粘接树脂，形成中空结构。
绝缘层14具有被覆不形成光半导体元件11的电路部21的面的作用，再配线15在其上面延伸，形成端子部17。绝缘层14的材料可以全部采用具有绝缘性的树脂等，也可以和被覆层12同样采用玻璃或丙烯酸树脂。
端子部17具有使贯通绝缘层14、延伸至光半导体元件11的背面的再配线15和外部电连接的作用。端子部17的一侧连接再配线15，另一侧从密封树脂16露出。端子部17由导电部件构成，可以采用和再配线15相同的材料。端子部17露出的密封树脂16的外面和端子部17的露出面位于同一面。焊锡等焊剂形成的凸点电极18附着在露出的端子部17上。
参照图1(B)，说明另外的实施方式的光半导体装置10B的结构。该图中所示的光半导体装置10B的基本结构和所述的光半导体装置10A相同，不同点在于再配线15的向背面延伸的结构。下面以其不同点为中心，说明光半导体装置10B的结构。
再配线15和设在光半导体元件11的表面的电路部21电连接，在此，只延伸设置在光半导体元件11的表面。形成再配线15的位置的光半导体元件11上穿设作为贯通元件的贯通电极的通孔，通过将导电材料填充在通孔中，形成接线柱19。
接线柱19贯通光半导体元件11和绝缘层14，一侧和再配线15电连接。接线柱19的另一侧形成端子部17，从密封树脂16露出外部。端子部17的露出面上形成凸点电极18。即，介由接线柱19，电连接再配线15和凸点电极18，因而可以以最短的距离连接两者。接线柱19其表面由绝缘层被覆，和光半导体元件15绝缘。
本发明的特征在于，光半导体元件11和被覆层12的侧面利用密封树脂16被覆。具体地说，光半导体元件11的表面上粘接有被覆层12，密封树脂16被覆两者的侧面。光半导体元件11和被覆层12的边界部也利用密封树脂16被覆。因此，可以防止水分等从光半导体元件11和被覆层12的边界部侵入内部。
另外，密封树脂16密封光半导体元件11的包含背面的整体。因此，除露出在外部的被覆层12和端子部17之外的其他要素由密封树脂16被覆，因而可以进一步提高光半导体装置10整体的耐湿性等。
如图1(A)所示，再配线15绕过光半导体元件11的侧面，连接在端子部17上时，因为形成于半导体元件11侧面的再配线15由密封树脂16保护，因而可以防止再配线15的断线。
下面参照图2至图7，说明光半导体装置10的制造方法。本发明涉及的光半导体装置10的制造方法包括：准备包含受光元件或发光元件的多个电路部21形成于其表面的晶片20的工序；形成分离槽24，使所述晶片20由所述晶片20的背面分离，分离成各个光半导体元件11的工序；在光半导体元件11的背面设置和所述电路部21电连接的端子部17的工序；形成密封树脂16，至少填充所述分离槽24的工序；沿所述分离槽24分离成各个光半导体装置10的工序。
首先参照图2至图5，说明图1(A)所示的光半导体装置10A的制造方法。
首先参照图2，准备包含受光元件或发光元件的多个电路部21形成于其表面的晶片20，在晶片表面上粘贴透明的被覆层12被覆电路部21。
参照图2(A)，在由硅等半导体构成的晶片20上利用众所周知的扩散工序矩阵状形成多个电路部21。各电路部21上形成相同的电路。形成包括受光元件或发光元件的电路。再使各电路部21和再配线15电连接。
参照图2(B)，介由粘接树脂13在形成电路部21的晶片20的面上粘贴被覆层12。被覆层12可以采用透明的玻璃或丙烯树脂等。另外，粘接树脂13可以采用透明的环氧树脂等。另外在被覆层的表面上粘贴薄片22。利用该薄片22可以防止在后工序中划伤被覆层12。也可以防止直到最后的工序前各光半导体装置10零散。通过研磨或蚀刻晶片20的背面，也可以使晶片20薄型化。
然后，参照图3，形成分离槽24，使晶片20由晶片20的背面分离，分离成各个光半导体元件11。
参照图3(A)，沿着各电路部21的边界线的切割线22，使用切割刀23，进行切割。
参照图3(B)，对切割后的剖面进行说明。切割的深度设定为至少分割晶片20形成各光半导体元件11的程度以上的深度。在此，进行切割，使晶片20和被覆层12两者被分割。粘接树脂13和再配线15对应切割线22的位置的部分也被切割。光半导体元件11和被覆层12的侧面形成倾斜面。因为光半导体元件11侧面形成倾斜面，故在以后工序中容易在光半导体元件11的侧面形成再配线15。也可以切割至切除一部分薄片22的程度。各被覆层12和光半导体元件11即使分割，各被覆层12也粘贴在一个薄片22上，故直到最后的工序为止，各装置不会零散。
利用绝缘层14保护光半导体元件11的背面。也可以在整面形成绝缘层14之后，和其他的部件同时进行切割。也可以在进行切割之后，形成绝缘层14。
而后，参照图4，在光半导体元件11的背面设置和电路部21电连接的端子部17。
参照图4(A)，使再配线15延伸至绝缘层14的表面。再配线15的材料为Al、Ag、Au、Pt、Pd或导电膏等，利用蒸镀、喷溅、CVD等低真空或高真空下的粘附、电镀、无电解镀敷或烧结等进行被覆。在此，光半导体元件11的侧面部形成倾斜面，由此，利用上述方法形成再配线15变得容易。特别是利用喷溅形成再配线15时，由于半导体元件11的侧面是倾斜面，可以更加可靠地进行材料的粘附。
参照图4(B)，形成与再配线15电连接的端子部17。例如可通过使用转印法配设焊球，形成端子部17。
而后，参照图5，至少填充分离槽24，形成密封树脂16，沿分离槽24分离成各个光半导体装置10。
参照图5(A)，形成密封树脂16，填充分离槽24并被覆端子部17。在此，形成密封树脂16，覆盖晶片20的整个面。可以通过使用金属模型的密封方法或模铸法或真空印刷等方法形成密封树脂16。
参照图5(B)，使端子部17从密封树脂16露出。该工序可以通过利用研磨装置研磨密封树脂16进行。由此，由密封树脂16形成的上面形成平坦面，形成由该面露出端子部17的结构。在露出的端子部17上形成由焊锡等形成的凸点电极18。在露出的端子部17上可以进行镀覆，也可以形成球状的电极。
最后参照图5(C)，通过沿分离槽24进行切割，分离成各半导体装置。因为在此的切割中，只切断密封树脂16，故可以实现抑制切割刀的磨耗的工序。然后进行测试工序或从薄片22剥离的工序，而后制成例如图1(A)所示的光半导体装置10A。
在制造如图1(B)所示的光半导体装置10B时，取代上述使再配线15延伸至光半导体元件11的背面的工序，添加在半导体元件11上设置通孔，形成接线柱19的工序。其他的工序和上述的工序相同。
上述对本发明涉及的光半导体装置及其制造方法进行了说明，但在不脱离本发明的要旨的范围内，可以进行各种变化。
例如参照图6，在分离晶片20的工序中，也可以以被覆层12不分离的程度设置分离槽24。图7(A)显示进行切割，分离光半导体元件11的工序。图7(B)显示使再配线15延伸至光半导体元件11的背面，设置端子部17的工序。图7(C)显示进行树脂密封之后，使端子部17露出，形成凸点电极18的状态。图7(D)显示在分离槽24的位置切割密封树脂16和被覆层12，分离成各个光半导体装置10的状态。
本发明实现如下的效果。
本发明的光半导体装置提供一种光半导体装置10，其中，利用密封树脂16保护被覆层12和光半导体元件11的侧面，故可以提高耐湿性和耐热性以及机械强度。由于延伸在光半导体元件11的侧面的再配线15利用密封树脂16保护，故可以防止再配线15的断线。
本发明的光半导体装置的制造方法中，连同被覆层12将晶片20贴附在薄片22上之后进行切割工序，故直至最后的工序，各光半导体装置10不会零散。而且在分割各光半导体装置10的最后的切割工序中，由于只利用切割刀切割密封树脂16，故可抑制切割刀的磨耗。由于被覆层21的表面由薄片22被覆，故可以防止划伤被覆层21的表面。可以将1张薄片22共用作保护薄片和切割薄片。

Claims (17)

1、一种光半导体装置，其特征在于，其包括：光半导体元件，包含受光元件或发光元件的电路部形成于其表面；端子部，其设于所述光半导体元件的背面，而且和所述电路部电连接；被覆层，其被覆所述光半导体元件的表面而且由透明材料构成；密封树脂，其被覆所述光半导体元件的侧面。
2、如权利要求1所述的光半导体装置，其特征在于，所述光半导体元件的背面由所述密封树脂被覆，所述端子部自所述密封树脂露出。
3、如权利要求1所述的光半导体装置，其特征在于，所述光半导体元件的背面由绝缘层被覆，所述绝缘层的背面形成所述端子部。
4、如权利要求1所述的光半导体装置，其特征在于，所述光半导体元件的电路部和所述端子部由设于所述光半导体元件上的贯通电极电连接。
5、如权利要求1所述的光半导体装置，其特征在于，所述光半导体元件的电路部和所述端子部介由延伸设置在所述光半导体元件侧面部的再配线连接，所述再配线由所述密封树脂被覆。
6、如权利要求1所述的光半导体装置，其特征在于，所述端子电极的背面形成有凸点电极。
7、如权利要求1所述的光半导体装置，其特征在于，所述半导体元件的侧面形成倾斜面。
8、如权利要求1所述的光半导体装置，其特征在于，所述密封层的侧面由密封树脂被覆。
9、一种光半导体装置的制造方法，其特征在于，其包括：准备表面上形成有包含受光元件或发光元件的多个电路部的晶片的工序；形成分离槽，使所述晶片由所述晶片的背面分离，分离成各个光半导体元件的工序；在所述光半导体元件的背面设置和所述电路部电连接的端子部的工序；形成密封树脂，使其至少填充所述分离槽的工序；沿所述分离槽分离成各个光半导体装置的工序。
10、如权利要求9所述的光半导体装置的制造方法，其特征在于，在使所述被覆层向下将所述晶片粘贴在薄片上后，形成所述分离槽。
11、如权利要求9所述的光半导体装置的制造方法，其特征在于，所述分离槽使所述晶片及所述被覆层两者分离，利用填充在所述分离槽中的所述密封树脂被覆所述光半导体元件及所述被覆层的侧面。
12、如权利要求9所述的光半导体装置的制造方法，其特征在于，所述分离槽使所述被覆层局部分离，利用填充在所述分离槽中的所述密封树脂被覆所述光半导体元件的侧面及所述被覆层的局部侧面。
13、如权利要求9所述的光半导体装置的制造方法，其特征在于，所述光半导体元件的电路部和所述端子部由设于所述光半导体元件上的贯通电极电连接。
14、如权利要求9所述的光半导体装置的制造方法，其特征在于，所述光半导体元件的电路部和所述端子部介由延伸设置在所述光半导体元件侧面部的再配线连接，所述再配线由所述密封树脂被覆。
15、如权利要求14所述的光半导体装置的制造方法，其特征在于，在形成倾斜面的所述侧面部形成所述再配线。
16、如权利要求9所述的光半导体装置的制造方法，其特征在于，以被覆所述端子电极及所述晶片背面的方式形成所述密封树脂，通过研磨所述密封树脂使所述端子电极露出。
17、如权利要求9所述的光半导体装置的制造方法，其特征在于，在所述晶片的背面粘贴透明的被覆层，以被覆所述电路部。
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