CN1610949B - 一种切换磁电阻存储器件的方法和磁电阻阵列 - Google Patents

一种切换磁电阻存储器件的方法和磁电阻阵列 Download PDF

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CN1610949B
CN1610949B CN028227050A CN02822705A CN1610949B CN 1610949 B CN1610949 B CN 1610949B CN 028227050 A CN028227050 A CN 028227050A CN 02822705 A CN02822705 A CN 02822705A CN 1610949 B CN1610949 B CN 1610949B
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利奥尼德·萨维特申科
布拉德利·N.·恩格尔
尼古拉斯·D.·里佐
马克·F.·德埃尔
贾森·阿伦·贾尼斯克
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
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Abstract

一种切换可伸缩磁电阻存储器单元(10)的方法，包括提供夹在字线(20)与数字线(30)之间的磁电阻存储器件(3)，以使在各个时刻能够将电流波形提供给字线和数字线，使磁场通量将该器件的有效磁距矢量旋转大约180°。该磁电阻存储器件包括N个反铁磁耦合的铁磁层。可以调整N来改变该器件的磁切换体积。

Description

一种切换磁电阻存储器件的方法和磁电阻阵列
技术领域
本发明涉及半导体存储器件。
具体而言，本发明涉及利用磁场的半导体随机存取存储器件。
背景技术
非易失性存储器件是电子系统中极为重要的部件。如今，快擦写存储器(FLASH)在应用中成为主要的非易失性存储器件。典型的非易失性存储器件使用在浮动氧化物层(floating oxide layer)中俘获的电荷来存储信息。快擦写存储器的缺点包括电压要求高以及编程和擦除时间长。另外，在存储器失效之前，快擦写存储器具有104～106个周期的较差写入持续时间。此外，为保持合理的数据记忆力，栅极氧化物的定标(scaling)受到电子所遇见的隧道势垒的限制。因此，限制了快擦写存储器可定标到的尺寸。
为克服这些缺陷，人们对磁存储器件进行研究。一种这样的器件是磁电阻RAM(以后称之为“MRAM”)。然而，为实现商用，MRAM必须具有同当前存储技术可比的存储密度，可伸缩以适应未来的升级，工作电压低，功耗低，且读/写速度具有竞争力。
对于MRAM器件，非易失性存储状态的稳定性，读/写周期的可重复性，和存储器元件至元件切换场的一致性成为其设计特性的三个最重要的方面。在MRAM中的存储状态并不是由电能来保持，而是由磁矩矢量的方向来保持。通过施加磁场并且使MRAM器件中的磁性材料磁化成两种可能的存储状态之中的一种，来实现存储数据。通过检测在MRAM器件中两种状态之间的电阻差来恢复数据。通过使电流流经磁结构之外的带状线(trip lines)或磁结构本身来产生用于写入的磁场。
随着MRAM器件横向尺寸的减小，出现了三种问题。首先，对于给定形状和膜厚度，切换场增大，需要更大的磁场来切换。其次，减小了总切换体积(total switching volume)，使得用于反转的能量势垒减小。能量势垒表示用于将磁矩矢量从一个状态切换到另一个状态所需的能量的量值。能量势垒决定MRAM器件的数据保持力和差错率，如果势垒过小，会因热涨落(超顺磁性)而出现不期望的反转。较小能量势垒的主要问题在于，极难有选择地切换阵列中的一个MRAM器件。可选择性允许进行切换，而不会无意地对其他MRAM器件进行切换。最后，由于切换场是由形状产生，当MRAM器件尺寸减小时，切换场变得对形状变化更为敏感。随着在更小尺度进行光刻定标变得更为困难，MRAM器件将难于保持紧凑的切换分布。
因此，克服上述缺陷以及其它现有技术所固有的缺陷，将很有意义。
从而，本发明的一个目的在于，提供一种写入磁电阻随机存取存储器件的新型、改进的方法。
本发明的另一目的在于，提供一种写入高度可选择的磁电阻随机存取存储器件的新型、改进的方法。
本发明的又一目的在于，提供一种写入差错率得到改善的磁电阻随机存取存储器件的新型、改进的方法。
本发明的再一目的在于，提供一种写入磁电阻随机存取存储器件的优选新型、改进的方法，所述器件的切换场对形状的依赖更小。
发明内容
为实现上述提出的以及其他目的和优点，批露了一种写入可伸缩磁电阻存储阵列的方法。存储阵列包括多个可伸缩磁电阻存储器件。为简单起见，本发明将考察如何将写入方法应用于单个MRAM器件，不过应该理解，该写入方法可应用于任何数量的MRAM器件。
用于说明该写入方法的MRAM器件包括与磁电阻存储元件位置邻近的字线和数字线。磁电阻存储元件包括与数字线位置邻近的栓固磁区(pinned magnetic region)。隧道势垒置于栓固磁区上。然后，在隧道势垒上安置自由磁区，并与字线邻近。在优选实施例中，栓固磁区的合成磁矩矢量被固定在最佳方向。此外，在优选实施例中，自由磁区包括合成反铁磁(以后称之为“SAF”)层材料。合成反铁磁层材料包括N个反铁磁耦合的铁磁材料层，其中，总数N大于或等于2。N层决定着磁切换体积，通过改变N可对其进行调整。在优选实施例中，通过在各邻近铁磁层之间夹持反铁磁耦合间隔层，将N个铁磁层反铁磁耦合。另外，各N层具有被调整成提供最佳写入模式的磁矩。
在优选实施例中，N等于2，使得合成反铁磁层材料为铁磁层/反铁磁耦合间隔层/铁磁层的三层结构。三层结构中的两个铁磁层分别具有磁矩矢量M1和M2，且通常通过反铁磁耦合间隔层的耦合使磁矩矢量反平行取向。在MRAM结构中各层的静磁场也产生反铁磁耦合。因此，除了消除两个磁层之间的铁磁耦合外，间隔层不必提供任何附加的反铁磁耦合。可以在题为“Magnetoresistance Random AccessMemory for Improved Scalability”的与本申请同一天提交的共同未决美国专利申请中得到用于说明该写入方法的MRAM器件的更多信息，该申请在此引作参考。
MRAM器件中两个铁磁层的磁距矢量可具有不同厚度或材料，以提供由ΔM＝(M2-M1)给出的结果磁矩矢量和子层磁矩分数平衡比(sub-layer moment fractional balance ratio)三层结构的合成磁距矢量随所施加的磁场自由旋转。在零场中，合成磁距矢量的方向将稳定，这是由磁性的各向异性而决定，即与栓固参考层(pinned reference layer)的合成磁矩矢量平行，或反平行。应该理解，术语“合成磁矩矢量”仅用于本说明目的，并且考虑完全平衡磁矩的情形，在没有磁场时，合成磁矩矢量可以为零。如下面所述，只有与隧道势垒邻近的子层磁矩矢量决定存储器的状态。
流过MRAM器件的电流取决于隧道磁电阻，隧道磁电阻由直接与隧道势垒邻近的自由和栓固层的磁矩矢量的相对取向而决定。如果磁距矢量平行，则MRAM器件电阻较低，偏压将导致更大的电流流过器件。将此状态定义为“1”。如果磁距矢量反平行，则MRAM器件电阻较高，所施加的偏压将导致更小的电流流过器件。将此状态定义为“0”。应该理解，这些定义是随意的，反之也可，不过在此示例中所用定义出于说明目的。因此，在磁电阻存储器中，通过施加磁场，使MRAM器件中磁距矢量按相对于栓固参考层中磁距矢量平行和反平行方向之中任一种方向取向，来实现数据存储。
对可伸缩MRAM器件进行写入的方法依赖近平衡(nearlybalanced)的SAF三层结构的“自旋-翻转(spin-flop)”现象。这里，将术语“近平衡”定义为，子层磁矩分数平衡比的量值处在范围0≤|Mbr|≤0.1内。自旋-翻转现象通过旋转铁磁层的磁距矢量，使得它们与所施加场的方向标称(nominally)正交，但主要仍是相互反平行，从而降低所施加场的总磁能。在所施加场的方向上各铁磁磁距矢量的带有较小偏转的旋转或翻转造成总磁能的减少。
通常，利用翻转现象和定时脉冲序列，能够使用两个截然不同的模式对MRAM器件进行写入；即直接写入模式或触发写入(togglewrite)模式。这些模式使用相同的定时脉冲序列来实现，对此下面将会有所描述，不过在磁性子层磁矩与所施加磁场的大小及极性的选择上有所不同。
每种写入方法都具有各自的优点。例如，当使用直接写入模式时，若进行写入的状态不同于存储的状态，由于仅切换状态，从而无需确定MRAM器件的最初状态。尽管在启动写入序列之前直接写入方法无需知晓MRAM器件的状态，然而它需要依据所期望的状态改变字和数字线的极性。
当使用触发写入方法时，由于每当从字和数字线产生相同极性脉冲序列时将会切换状态，从而在写入前需要确定MRAM器件的最初状态。因此，通过读取所存储的存储器状态并将该状态与所要写入的新状态进行比较，使触发写入模式起作用。比较之后，仅当所存储的状态与新状态不同时，才对MRAM器件进行写入。
MRAM器件被构造成使得磁各向异性轴理想地与字和数字线成45°角。因此，在时刻t0处，磁距矢量M1和M2沿最佳方向取向，与字线和数字线的方向成45°角。作为写入方法的示例，为使用直接或触发写入切换MRAM器件的状态，使用以下电流脉冲序列。在时刻t1，增大字电流，M1和M2开始依据字电流的方向按顺时针方向或按逆时针方向旋转，由于自旋-翻转效应，从而使它们调整成与场方向标称正交。在时刻t2，接通数字电流。数字电流的流动方向使得M1和M2在与数字线磁场所导致旋转相同的方向上进一步旋转。此时，接通字线电流和数字线电流，且M1和M2与净磁场方向标称正交，其相对电流线成45°。
重要的是应当理解，当仅接通一个电流时，磁场将使M1和M2标称对准与字线或数字线平行的方向。然而，如果接通两个电流，则M1和M2标称正交地对准成与字线和数字线成45°角。
在时刻t3，切断字线电流，使得仅通过数字线磁场旋转M1和M2。此时，通常M1和M2已旋转过其不易磁化轴(hard-axis)不稳定点。在时刻t4，切断数字电流，M1和M2沿最佳各向异性轴对准。此时，M1和M2已旋转180°，并且MRAM器件已切换。从而，通过顺序接通和切断字和数字电流，能够使MRAM器件的M1和M2旋转180°，以便切换器件的状态。
附图说明
对本领域技术人员而言，结合以下附图，通过后面对本文优选实施例的详细描述，将易于理解上述及其他更为具体的本发明目的和优点：
图1是表示磁电阻随机存取存储器件的简化截面图；
图2是表示具有字和数字线的磁电阻随机存取存储器件的简化平面图；
图3的图表模拟了在磁电阻随机存取存储器件中产生直接或触发写入模式的磁场幅值组合；
图4表示当接通字电流和数字电流时二者的时序图；
图5表示对于触发写入模式，当将’1’写成’0’时，磁电阻随机存取存储器件的磁矩矢量的旋转；
图6表示对于触发写入模式，当将’0’写成’1’时，磁电阻随机存取存储器件的磁矩矢量的旋转；
图7表示对于直接写入模式，当将’1’写成’0’时，磁电阻随机存取存储器件的磁矩矢量的旋转；
图8表示对于直接写入模式，当将’0’写成已经为’0’的状态时，磁电阻随机存取存储器件的磁矩矢量的旋转；
图9表示当仅接通数字电流时字电流和数字电流的时序图；
图10表示当仅接通数字电流时，磁电阻随机存取存储器件的磁矩矢量的旋转。
具体实施方式
现参看图1，图1表示根据本发明的MRAM阵列3的简化截面图。在该图中，仅显示单个磁电阻存储器件10，但应该理解，MRAM阵列3包括多个MRAM器件10，在此仅显示一个这样的器件是为了简化写入方法的描述。
MRAM器件10夹在字线20和数字线30之间。字线20和数字线30包括能通过电流的导电材料。在该图中，字线20处在MRAM器件10的顶部，数字线30处在MRAM器件10的底部，且其方向与字线20成90°角(参看图2)。
MRAM器件10包括第一磁区15，隧道势垒16，和第二磁区17，其中隧道势垒16夹在第一磁区15和第二磁区17之间。在优选实施例中，磁区15包括三层结构18，其具有夹在两个铁磁层45和55之间的反铁磁耦合间隔层65。反铁磁耦合间隔层65具有厚度86，铁磁层45和55分别具有厚度41和51。此外，磁区17具有三层结构19，其具有夹在两个铁磁层46和56之间的反铁磁耦合间隔层66。反铁磁耦合间隔层66具有厚度87，铁磁层46和56分别具有厚度42和52。
通常，反铁磁耦合间隔层65和66包括元素Ru，Os，Re，Cr，Rh，Cu或其组合物中的至少一种。另外，铁磁层45，55，46和56包括元素Ni，Fe，Mn，Co或其组合物中的至少一种。并且应该理解，除三层结构外，磁区15和17可包括其它合成反铁磁层材料结构，在本实施例中使用三层结构仅出于说明的目的。例如，一种这样的合成反铁磁层材料结构可包括铁磁层/反铁磁耦合间隔层/铁磁层/反铁磁耦合间隔层/铁磁层结构的五层堆叠。
铁磁层45和55各自具有磁矩矢量57和53，通常通过反铁磁耦合间隔层65的耦合使磁矩矢量57和53保持反平行。另外，磁区15具有合成磁矩矢量40，磁区17具有合成磁矩矢量50。合成磁矩矢量40和50都沿各向异性易磁化轴(easy-axis)取向，方向与字线20和数字线30成一角度，最好为45°(参看图2)。此外，磁区15为自由铁磁区，意指在施加磁场的情况下合成磁矩矢量40自由转动。磁区17为栓固铁磁区，意指在适当施加磁场的情况下合成磁矩矢量50不会自由转动，并用作参考层。
虽然在每个三层结构18中反铁磁耦合层被示出在两个铁磁层之间，然而应该理解，可通过其他手段，例如静磁场或其他特性，将铁磁层反铁磁耦合。例如，当将单元的纵横比减小至5或更小时，由静磁通量闭包(magnetostatic flux closure)使铁磁层反平行耦合。
在优选实施例中，对于非圆形平面，MRAM器件10具有长/宽比在1至5范围内的三层结构18。不过，本说明的平面为圆形(参看图2)。在优选实施例中，MRAM器件10为圆形，以使由形状各向异性对切换场的影响最小，另外还由于更易于使用光刻处理使器件横向定标至更小尺寸。不过应该理解，MRAM器件10可具有其他形状，如正方形，椭圆形，矩形，或菱形，但所示为圆形是出于简单起见以及改善性能。
此外，在制造MRAM阵列3期间，顺序沉积或按其他方式顺序形成各个相继层(即，30，55，65等)，可通过在半导体制造业已知的任何技术有选择地沉积，光刻处理，刻蚀等来限定每个MRAM器件10。在至少对铁磁层45和55的沉积过程中，提供磁场来对此双层设置最佳易磁化轴(感应各向异性)。所提供的磁场对磁距矢量53和57产生最佳各向异性轴。选择最佳轴在字线20和数字线30之间的45°角上，下面将会对此进行描述。
现参看图2，图2表示根据本发明的MRAM阵列3的简化平面图。为简化MRAM器件10的描述，所有方向将参考所示x-和y-坐标系100以及顺时针旋转方向94和逆时针旋转方向96。为进一步简化描述，再假设N等于2，使得MRAM器件10在具有磁矩矢量53和57以及合成磁矩矢量40的区15中包括一个三层结构。另外，由于将对区15的磁矩矢量进行切换，从而仅示出区15的磁矩矢量。
为说明写入方法如何工作，假定磁矩矢量53和57的最佳各向异性轴的方向相对负x-和负y-方向成45°角，以及相对正x-和正y-方向成45°角。作为示例，图2所示磁距矢量53的方向相对负x-和负y-方向成45°角。由于磁距矢量57通常与磁距矢量53反平行取向，从而其方向相对正x-和正y-方向成45°角。该最初取向将用于说明写入方法的示例，下面将会对此进行描述。
在优选实施例中，将字电流60定义为如果沿正x-方向流动则为正，将数字电流70定义为如果沿正y-方向流动则为正。字线20和数字线30的目的在于在MRAM器件10内产生磁场。正字电流60将导致环形字磁场HW 80，正数字电流70将导致环形数字磁场HD 90。由于字线20在MRAM器件10上方，在元件平面内，对于正字电流60，将沿正y-方向将HW 80施加给MRAM器件10。同样，由于数字线30在MRAM器件10下方，在元件的平面内，对于正数字电流70，将沿正x-方向将HD 90施加给MRAM器件10。应该理解，对于正和负电流的定义是随意的，此处定义出于说明目的。将电流流向反转的效果是使在MRAM器件10中所导致的磁场的方向改变。电流导致的磁场的行为为本领域技术人员所熟知，在此不再做详细描述。
现在参看图3，图3模拟了SAF三层结构的切换行为。该模拟包括两个单畴磁层，其具有带固有各向异性的近似相同的磁矩(近平衡SAF)，反铁磁耦合，并且其磁化动态特性用Landau-Lifshitz(郎道-利夫施特兹)方程来描述。x-轴是以奥斯特(Oersted)为单位的字线磁场幅度，y-轴是以奥斯特为单位的数字线磁场幅度。以如图4所示脉冲序列100施加磁场，其中，脉冲序列100包括作为时间的函数的字电流60和数字电流70。
如图3所示，具有三个操作区域。在区域92中没有切换。对于在区域95中的MRAM操作，直接写入方法有效。当使用直接写入方法时，无需确定MRAM器件的初始状态，这是由于若进行写入的状态不同于存储的状态，则仅仅切换状态。写入状态的选择是由字线20和数字线30两者中的电流方向来确定。例如，如果要写入’1’，则在两个线中的电流方向将为正。如果在元件中已存储’1’且进行’1’的写入，则MRAM器件的最终状态将继续为’1’。此外，如果存储了’0’且以正电流进行’1’的写入；则MRAM器件的最终状态将为’1’。当通过使用在字和数字线两者之中的负电流写入’0’时会获得相似效果。因此，无论其初始状态如何，以适当的电流脉冲极性，任何一种状态都可以编程为所需的’1’或’0’。在本说明中，将区域95中的操作定义为“直接写入模式”。
对于区域97中的MRAM操作而言，触发写入方法有效。当使用触发写入方法时，在写入之前需要确定MRAM器件的初始状态，这是由于每次对MRAM器件写入时都对状态进行切换，而无论电流方向如何，只要对于字线20和数字线30两者选择相同极性的电流脉冲即可。例如，如果最初存储’1’，则在一个正电流脉冲序列流经字和数字线之后，器件的状态将被切换到’0’。在所存储的’0’状态上重复正电流脉冲序列，会将其写回至’1’。因此，为了能将存储元件写成所需状态，必须首先读出MRAM器件10的初始状态，并且将其与所要写入的状态进行比较。读出和比较可能需要附加的逻辑电路，包括用于存储信息的缓冲器和用于比较存储状态的比较器。从而，仅当所存储的状态与所要写入状态不同时才对MRAM器件10写入。这种方法的一个优点在于功耗降低，这是由于仅切换不同的位。使用触发写入方法的另一优点在于，仅需要单极性电压，从而可使用较小的N沟道晶体管来驱动MRAM器件。在本说明中，将区域97中的操作定义为“触发写入模式”。
两种写入方法都涉及在字线20与数字线30中提供电流，使得磁矩矢量53和57能够沿如前面所述两个最佳方向之一取向。为了充分说明这两种切换模式，现给出描述磁距矢量53，57和40随时间变化的具体示例。
现参考图5，图5说明了使用脉冲序列100将’1’写成’0’的触发写入模式。在该图中的时刻t0，磁距矢量53和57沿图2所示最佳方向取向。将该取向将定义为’1’。
在时刻t1，接通正字电流60，它致使Hw 80指向正y-方向。正Hw 80的作用将使近平衡反向对准的MRAM三层进行“翻转(FLOP)”，并变为与所施加磁场方向成近似90°的取向。铁磁层45与55之间的有限反铁磁交换相互作用将允许磁矩矢量53和57即刻朝磁场方向偏转一小角度，并且合成磁距矢量40将对分磁距矢量53与57之间夹角，并将与Hw 80对准。因此，磁距矢量53沿顺时针方向94旋转。由于合成磁矩矢量40是磁距矢量53与57的矢量和，磁距矢量57也沿顺时针方向94旋转。
在时刻t2，接通正数字电流70，它导致正HD 90。从而，合成磁矩矢量40同时由Hw 80指向正y-方向，由HD 90指向正x-方向，其作用是使有效磁距矢量40进一步沿顺时针方向94旋转，直至其通常指向正x-和正y-方向之间成45°角的取向。因此，磁距矢量53和57也沿顺时针方向94进一步旋转。
在时刻t3，切断字电流60，使得此时仅有HD 90指引合成磁矩矢量40，此时合成磁矩矢量40将沿正x-方向取向。两个磁距矢量53和57现在通常都将以通过其各向异性不易磁化轴不稳定点的角度取向。
在时刻t4，切断数字电流70，因此磁场力对合成磁矩矢量40不起作用。从而，磁距矢量53和57将沿其最接近的最佳方向取向，以使各向异性能量最小。在此情形中，磁距矢量53的最佳方向为相对正y-方向和正x-方向成45°角。该最佳方向也与时刻t0时磁距矢量53的初始方向成180°角，并将其定义为’0’。从而，MRAM器件10已被切换至’0’。应该理解，也可通过在字线20与数字线30中均使用负电流，使磁距矢量53，57和40沿逆时针方向96旋转而对MRAM器件10进行切换，不过所示仅出于说明目的。
现看图6，图6说明使用脉冲序列100将’0’写成’1’的触发写入模式。所示为在各个时刻t0，t1，t2，t3和t4时磁距矢量53和57以及合成磁矩矢量40，如前面所述，表示使用相同电流和磁场方向将MRAM器件10从’0’切换到’1’的状态的能力。从而，通过触发写入模式写入MRAM器件10的状态，其对应于图3中的区域97。
对于直接写入模式，假设磁距矢量53的幅值大于磁距矢量57，则磁距矢量40与磁距矢量53指向相同的方向，不过在零场中具有更小幅值。这种不平衡磁矩使偶极子能量破坏近平衡SAF的对称性，偶极子能量倾向于使总磁矩对准所施加的场。因此，对于给定电流极性，可以仅在一个方向发生切换。
现参看图7，图7表示使用脉冲序列100利用直接写入模式将’1’写成’0’的示例。此处同样地，存储状态最初为’1’，磁距矢量53的指向相对负x-和负y-方向成45°，磁距矢量57的指向相对正x-和正y-方向成45°。按照前面通过正字电流60和正数字电流70所述的脉冲序列，通过与前面所述触发写入模式相似的方式进行写入。注意，在时刻t1，磁矩再次“翻转”，但由于不平衡磁矩以及各向异性，最终角度偏离90°。在时刻t4之后，MRAM器件10已被切换至’0’状态，且合成磁矩40按所需与正x-和正y-方向成45°角取向。当将’0’写成’1’时会获得类似的结果，只是使用负字电流60和负数字电流70。
现参看图8，图8表示当新状态与已存储的状态相同时利用直接写入模式进行写入的示例。在此示例中，在MRAM器件10中已存储了’0’，且现在重复电流脉冲序列100以存储’0’。在时刻t1，磁距矢量53和57试图“翻转”，但由于不平衡磁矩必须与施加磁场相抗而起作用，从而削弱了旋转。因此，存在附加的能量势垒使以旋转脱离相反状态。在时刻t2，主磁矩53几乎与正x-轴对准，与距其初始各向异性方向成小于45°的角度。在时刻t3，磁场沿正x-轴取向。不是进一步顺时针地旋转，系统现在通过改变相对于所施加场对称的SAF磁矩来降低其能量。被动磁矩57越过x-轴，主磁矩53返回到接近其最初方向，系统获得稳定。因此，在时刻t4，当去除磁场时，在MRAM器件10中所存储的状态将保持’0’。该序列说明了在图3中如区域95所示的直接写入模式的机制。因此，一般而言，为写入’0’，需要在字线60和数字线70两者中流过正电流，相反，为写入’1’，需要在字线60和数字线70两者中流过负电流。
如果施加更大的场，最终，与翻转相关地，能量减少，并且剪取值(scissor)超过正阻止触发事件出现的不平衡磁矩的偶极子能量所产生的附加能量势垒。此时，将出现触发事件，切换如区域97所述。
可对应用直接写入模式的区域95进行扩展，即，可将触发模式区域97移至更高磁场，如果时刻t3和t4相同或尽可能接近相同的话。在此情形中，当接通字电流60时，磁场方向开始时相对于位各向异性轴成45°，然后，当接通数字电流70时，其移至平行于位各向异性轴的方向。该示例类似于典型的磁场施加序列。不过，在此基本上同时切断字电流60和数字电流70，使得磁场方向不再做任何旋转。因此，所施加的场必须足够大，使得通过接通字电流60和数字电流70致使合成磁矩矢量40已移过其不易磁化轴不稳定点。现在，由于磁场方向仅旋转45°，而不是以前的90°，从而更不可能出现触发写入模式事件。具有基本一致的衰退时间t3和t4的优点在于，对场上升时间t1和t2的次序不具有任何附加限制。从而，可按任何次序接通磁场，或还可使其基本一致。
由于只有在时刻t2和时刻t3之间接通字电流60和数字电流70的MRAM器件将切换状态，从而前述写入方法具有高度选择性。在图9和图10中说明了该特性。图9表示当断开字电流60并且接通数字电流70时的脉冲序列100。图10表示MRAM器件10的状态的相应行为。在时刻t0，磁距矢量53和57以及合成磁矩矢量40的取向如图2所示。在脉冲序列100中，在时刻t1，接通数字电流70。此时，HD 90将致使合成磁矩矢量40指向正x-方向。
由于字电流60从未接通，合成磁矩矢量53和57从未转过其各向异性不易磁化轴不稳定点。结果，当在时刻t3切断数字电流70时，磁距矢量53和57将重新将其定向在最接近的最佳方向，在此情形为时刻t0处的初始方向。因此，不会切换MRAM器件10的状态。应该理解，如果在与上述相似的时刻接通字电流60并且数字电流70不被接通，将出现同样的结果。该特性确保仅对阵列中的一个MRAM器件进行切换，而其他器件保持其初始状态。从而，避免无意的切换，并使位差错率最小。
对本领域技术人员而言，会易于想到此处所述实施例的多种改变和变型。在这些改变和变型并不偏离本发明实质的前提下，期望将它们包括在本发明的范围之内，并仅通过后面权利要求的合理解释进行评定。
以上通过如此清晰和简明的术语充分描述了本发明，从而本领域技术人员能够理解以及实现本发明，本发明权利要求为：

Claims (10)

1.一种切换磁电阻存储器件的方法，包括步骤：
提供与第一导体和第二导体邻近的磁电阻存储器元件，其中，磁电阻存储器元件包括通过隧道势垒分隔的第一磁区和第二磁区，第一磁区和第二磁区中的至少一个包括N个反铁磁耦合的铁磁材料层，其中，N为至少等于2的整数，且其中各层具有经过调整以提供写入模式的磁矩，而且第一和第二磁区中的每个具有邻近隧道势垒且在时刻t0取向在初始最佳方向的磁距矢量，并且其中该初始最佳方向相对于第一导体和第二导体成约45度角；
在时刻t1，接通流过第一导体的第一电流；
在时刻t2，接通流过第二导体的第二电流；
在时刻t3，切断流过第一导体的第一电流；和
在时刻t4，切断流过第二导体的第二电流，其中使时刻t0、t1、t2、t3和t4为t0＜t1＜t2＜t3＜t4，并且接近隧道势垒的磁距矢量中的一个沿不同于所述初始最佳方向的方向取向，并且其中第一导体和第二导体中的每个中的电流以相同极性进行脉冲从而写入一状态，并且第一导体和第二导体中的每个中的电流以该相同极性进行脉冲从而反转该状态。
2.如权利要求1所述的方法，其中：
第一磁区是栓固磁区并且第二磁区是自由磁区，自由磁区包括N个反铁磁耦合的铁磁材料层，该N个层限定一体积，而且其中第一和第二磁区之一的子层磁矩分数平衡比在大约0≤|Mbr|≤0.1的范围内。
3.一种磁电阻阵列，包括：
第一导体；
第二导体；
与第一和第二导体邻近的磁电阻器件，该磁电阻器件包括：
第一磁区；
隧道势垒；和
第二磁区，该第二磁区被隧道势垒与第一磁区分隔，第二磁区包括一多层结构，该多层结构具有沿着与所述第一和第二导体成约45度角的方向上的各向异性易磁化轴取向的磁矩，并且第二磁区的磁矩分数平衡比(Mbr)的量值在大约0≤|Mbr|≤0.1的范围内。
4.如权利要求3所述的磁电阻阵列，其中，通过以下方式存储信息：用第一导体上具有第一极性的第一电流和第二导体上具有第一极性的第二电流将要被写入的位位置从第一逻辑状态切换到第二逻辑状态，以及用第一导体上具有第一极性的第三电流和第二导体上具有第一极性的第四电流将要被写入的位位置从第二逻辑状态切换到第一逻辑状态，其中第一导体是数字线并且第二导体是字线。
5.如权利要求4所述的磁电阻阵列，还包括用于读取磁电阻阵列的初始状态并将该初始状态与磁电阻阵列中要存储的新状态进行比较，以及仅在新状态不同于初始状态的情况下响应该比较而对磁电阻阵列进行编程的电路。
6.如权利要求3所述的磁电阻阵列，其中：
第一导体是字线；
第二导体是数字线；
所述磁电阻器件与数字线和字线邻近；
第一磁区是栓固磁区；
第二磁区是自由磁区；
所述多层结构包括N个反铁磁耦合的铁磁材料层，其中，N为大于或等于2的整数，且其中该N个铁磁材料层限定一体积，N个铁磁材料层中的各层具有经过调整以提供写入模式的磁矩，而且其中自由和栓固磁区之一的子层磁矩分数平衡比在大约0≤|Mbr|≤0.1的范围内，且自由磁区具有接近隧道势垒且沿在t0时刻的初始最佳方向取向的磁距矢量；并且
该磁电阻阵列被配置为通过以下方式存储信息：在时刻t1向字线提供字线电流脉冲，并在时刻t3切断字线电流脉冲，而在时刻t2另外将数字线电流脉冲提供给数字线，并且在时刻t4切断数字线电流脉冲，其中t0＜t1＜t2＜t3＜t4，这导致在时刻t4时靠近隧道势垒的自由磁区的磁距矢量的取向不同于所述初始最佳方向。
7.如权利要求3所述的磁电阻阵列，其中：
第一导体是字线；
第二导体是数字线；并且
所述磁电阻器件被夹在字线和数字线之间。
8.如权利要求3所述的磁电阻阵列，其中所述磁矩是所述多层结构的多个磁矩的合成磁矩。
9.如权利要求3所述的磁电阻阵列，其中该多层结构是合成反铁磁层材料。
10.如权利要求3所述的磁电阻阵列，其中该多层结构包括N个反铁磁耦合的铁磁材料层，其中N为大于或等于2的整数。
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WO2003034437A2 (en) 2003-04-24
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