CN1612370A - 半导体发光器件及其制造方法 - Google Patents
半导体发光器件及其制造方法 Download PDFInfo
- Publication number
- CN1612370A CN1612370A CNA2004100900815A CN200410090081A CN1612370A CN 1612370 A CN1612370 A CN 1612370A CN A2004100900815 A CNA2004100900815 A CN A2004100900815A CN 200410090081 A CN200410090081 A CN 200410090081A CN 1612370 A CN1612370 A CN 1612370A
- Authority
- CN
- China
- Prior art keywords
- light emitting
- semiconductor device
- contact layer
- emitting semiconductor
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
Abstract
Description
Claims (21)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003371846A JP4332407B2 (ja) | 2003-10-31 | 2003-10-31 | 半導体発光素子及びその製造方法 |
JP371846/03 | 2003-10-31 | ||
JP371846/2003 | 2003-10-31 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1612370A true CN1612370A (zh) | 2005-05-04 |
CN100385692C CN100385692C (zh) | 2008-04-30 |
Family
ID=34543977
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100900815A Active CN100385692C (zh) | 2003-10-31 | 2004-11-01 | 半导体发光器件及其制造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7166865B2 (zh) |
JP (1) | JP4332407B2 (zh) |
CN (1) | CN100385692C (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101809769B (zh) * | 2007-10-10 | 2011-12-14 | 信越半导体株式会社 | 化合物半导体外延晶片及其制造方法 |
CN101897047B (zh) * | 2007-12-14 | 2015-05-13 | 皇家飞利浦电子股份有限公司 | 具有键合界面的发光器件 |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007094476A1 (en) * | 2006-02-14 | 2007-08-23 | Showa Denko K.K. | Light-emitting diode |
JP2007258672A (ja) * | 2006-02-22 | 2007-10-04 | Sharp Corp | 発光ダイオード及びその製造方法 |
JP2007299846A (ja) * | 2006-04-28 | 2007-11-15 | Sharp Corp | 半導体発光素子及びその製造方法 |
JP2010510671A (ja) * | 2006-11-17 | 2010-04-02 | スリーエム イノベイティブ プロパティズ カンパニー | Led光源用の光学接着組成物 |
EP2087533A2 (en) * | 2006-11-17 | 2009-08-12 | 3M Innovative Properties Company | Planarized led with optical extractor |
JP4561732B2 (ja) * | 2006-11-20 | 2010-10-13 | トヨタ自動車株式会社 | 移動体位置測位装置 |
JP2010510685A (ja) * | 2006-11-20 | 2010-04-02 | スリーエム イノベイティブ プロパティズ カンパニー | Led光源用の光学接着組成物 |
JP2009016560A (ja) * | 2007-07-04 | 2009-01-22 | Sharp Corp | 半導体発光素子 |
KR20100059820A (ko) * | 2007-07-26 | 2010-06-04 | 더 리전츠 오브 더 유니버시티 오브 캘리포니아 | p-타입 표면을 가지는 발광 다이오드 |
EP2235752A4 (en) * | 2008-01-08 | 2013-12-04 | Moxtronics Inc | LIGHT-EMITTING HIGH PERFORMANCE DEVICES WITH HETEROSTRUCTURE AND METHOD |
US8299480B2 (en) * | 2008-03-10 | 2012-10-30 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device and method for manufacturing same, and epitaxial wafer |
KR100999684B1 (ko) * | 2009-10-21 | 2010-12-08 | 엘지이노텍 주식회사 | 발광 소자 및 그 제조방법 |
KR102282141B1 (ko) | 2014-09-02 | 2021-07-28 | 삼성전자주식회사 | 반도체 발광소자 |
CN105489719B (zh) * | 2015-12-31 | 2018-09-11 | 天津三安光电有限公司 | 一种带应变调和多量子阱结构的红外发光二极管 |
US10665750B2 (en) * | 2017-11-22 | 2020-05-26 | Epistar Corporation | Semiconductor device |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3230638B2 (ja) | 1993-02-10 | 2001-11-19 | シャープ株式会社 | 発光ダイオードの製造方法 |
US5376580A (en) | 1993-03-19 | 1994-12-27 | Hewlett-Packard Company | Wafer bonding of light emitting diode layers |
JP3239061B2 (ja) | 1996-02-29 | 2001-12-17 | シャープ株式会社 | 発光ダイオード及びその製造方法 |
JP3507716B2 (ja) | 1998-12-25 | 2004-03-15 | シャープ株式会社 | 半導体発光素子の製造方法 |
JP2000216428A (ja) * | 1999-01-25 | 2000-08-04 | Rohm Co Ltd | 半導体発光素子の製法 |
JP3725382B2 (ja) | 1999-11-11 | 2005-12-07 | 株式会社東芝 | 半導体素子の製造方法および半導体発光素子の製造方法 |
JP2001291895A (ja) * | 2000-04-06 | 2001-10-19 | Sharp Corp | 半導体発光素子 |
JP2002111052A (ja) * | 2000-09-28 | 2002-04-12 | Toshiba Corp | 半導体発光素子及びその製造方法 |
JP4091261B2 (ja) * | 2000-10-31 | 2008-05-28 | 株式会社東芝 | 半導体発光素子及びその製造方法 |
JP4153673B2 (ja) * | 2001-03-29 | 2008-09-24 | 株式会社東芝 | 半導体素子の製造方法 |
US20040104395A1 (en) * | 2002-11-28 | 2004-06-03 | Shin-Etsu Handotai Co., Ltd. | Light-emitting device, method of fabricating the same, and OHMIC electrode structure for semiconductor device |
-
2003
- 2003-10-31 JP JP2003371846A patent/JP4332407B2/ja not_active Expired - Fee Related
-
2004
- 2004-10-05 US US10/957,614 patent/US7166865B2/en active Active
- 2004-11-01 CN CNB2004100900815A patent/CN100385692C/zh active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101809769B (zh) * | 2007-10-10 | 2011-12-14 | 信越半导体株式会社 | 化合物半导体外延晶片及其制造方法 |
CN101897047B (zh) * | 2007-12-14 | 2015-05-13 | 皇家飞利浦电子股份有限公司 | 具有键合界面的发光器件 |
Also Published As
Publication number | Publication date |
---|---|
JP2005136271A (ja) | 2005-05-26 |
JP4332407B2 (ja) | 2009-09-16 |
US20050093015A1 (en) | 2005-05-05 |
CN100385692C (zh) | 2008-04-30 |
US7166865B2 (en) | 2007-01-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1612370A (zh) | 半导体发光器件及其制造方法 | |
CN1292494C (zh) | 发光半导体元件及其制造方法 | |
CN1237628C (zh) | 半导体发光元件及其制造方法 | |
KR101282775B1 (ko) | 수직형 발광 소자 및 그 제조방법 | |
JP2014197704A (ja) | 発光デバイスおよび発光デバイスの作製方法 | |
KR101469979B1 (ko) | 그룹 3족 질화물계 반도체 발광다이오드 소자 및 이의 제조방법 | |
CN1220280C (zh) | 氮化物半导体光发射装置及其制造方法 | |
CN1741294A (zh) | 半导体发光器件和制造半导体发光器件的方法 | |
CN1263170C (zh) | 氮化物基化合物半导体发光元件及其制造方法 | |
CN1941437A (zh) | 氮化镓基半导体发光二极管及其制造方法 | |
US20060186552A1 (en) | High reflectivity p-contacts for group lll-nitride light emitting diodes | |
JP2005229085A (ja) | オーミック接触を改善した窒化物半導体発光素子及びその製造方法 | |
CN1858921A (zh) | 倒装芯片发光二极管及其制造方法 | |
CN1870312A (zh) | 制造发光二极管的方法 | |
CN1645634A (zh) | 倒装芯片氮化物半导体发光二极管 | |
CN1943044A (zh) | 用于制造辐射发射的半导体芯片的方法 | |
CN1471735A (zh) | 在ⅲ-v族氮化物半导体基板上制作产生辐射的半导体芯片的方法以及产生辐射的半导体芯片 | |
CN1993837A (zh) | 用于半导体发光器件的正电极 | |
CN1674313A (zh) | 固态元件和固态元件装置 | |
CN1330416A (zh) | 半导体发光元件及其制造方法以及半导体发光装置 | |
CN1925177A (zh) | 半导体发光器件、其结构单元及制造方法 | |
JP2013120829A (ja) | 窒化物半導体紫外発光素子 | |
JP2005268739A (ja) | 発光効率の改善された窒化物半導体発光素子及びその製造方法 | |
CN101030618A (zh) | 氮化物半导体发光装置制造方法 | |
CN1630109A (zh) | 半导体发光元件、其制造方法以及半导体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: XIAMEN SAN AN PHOTOELECTRIC CO., LTD. Free format text: FORMER OWNER: SHARP CORPORATION Effective date: 20150127 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; TO: 361009 XIAMEN, FUJIAN PROVINCE |
|
TR01 | Transfer of patent right |
Effective date of registration: 20150127 Address after: Siming District of Xiamen City, Fujian province 361009 Luling Road No. 1721-1725 Patentee after: XIAMEN SANAN OPTOELECTRONICS CO., LTD. Address before: Osaka Japan Patentee before: Sharp Corporation |
|
EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20050504 Assignee: Integrated circuit Co., Ltd is pacified by Xiamen City three Assignor: XIAMEN SANAN OPTOELECTRONICS CO., LTD. Contract record no.: 2016120000007 Denomination of invention: Semiconductor light emitting device and method of fabricating the same Granted publication date: 20080430 License type: Common License Record date: 20160311 |
|
LICC | Enforcement, change and cancellation of record of contracts on the licence for exploitation of a patent or utility model |