CN1613155A - 半导体结构化工艺 - Google Patents
半导体结构化工艺 Download PDFInfo
- Publication number
- CN1613155A CN1613155A CNA028268679A CN02826867A CN1613155A CN 1613155 A CN1613155 A CN 1613155A CN A028268679 A CNA028268679 A CN A028268679A CN 02826867 A CN02826867 A CN 02826867A CN 1613155 A CN1613155 A CN 1613155A
- Authority
- CN
- China
- Prior art keywords
- technology
- semi
- conducting material
- layer
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 87
- 238000005516 engineering process Methods 0.000 title claims description 69
- 239000000463 material Substances 0.000 claims abstract description 78
- 238000000034 method Methods 0.000 claims abstract description 36
- 239000000126 substance Substances 0.000 claims abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 77
- 229910052710 silicon Inorganic materials 0.000 claims description 77
- 239000010703 silicon Substances 0.000 claims description 77
- 239000003518 caustics Substances 0.000 claims description 37
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 31
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 31
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- 238000001947 vapour-phase growth Methods 0.000 claims description 8
- 229920000642 polymer Polymers 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 238000005118 spray pyrolysis Methods 0.000 claims description 3
- 230000008569 process Effects 0.000 abstract description 16
- 238000005530 etching Methods 0.000 abstract description 9
- 230000001681 protective effect Effects 0.000 abstract 3
- 239000010410 layer Substances 0.000 description 71
- 230000007797 corrosion Effects 0.000 description 33
- 238000005260 corrosion Methods 0.000 description 33
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 18
- 235000012431 wafers Nutrition 0.000 description 18
- 239000000758 substrate Substances 0.000 description 15
- 239000000243 solution Substances 0.000 description 13
- 238000002310 reflectometry Methods 0.000 description 12
- 150000004767 nitrides Chemical class 0.000 description 10
- 239000000203 mixture Substances 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 6
- 229910017604 nitric acid Inorganic materials 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000005192 partition Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000013047 polymeric layer Substances 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- 230000004308 accommodation Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000635 electron micrograph Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Description
Claims (22)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AUPCT/AU01/01546 | 2001-11-29 | ||
PCT/AU2001/001546 WO2002045143A1 (en) | 2000-11-29 | 2001-11-29 | Semiconductor wafer processing to increase the usable planar surface area |
PCT/AU2002/001625 WO2003047004A1 (en) | 2001-11-29 | 2002-11-29 | Semiconductor texturing process |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1613155A true CN1613155A (zh) | 2005-05-04 |
CN1613155B CN1613155B (zh) | 2010-05-05 |
Family
ID=3700898
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN028268679A Expired - Fee Related CN1613155B (zh) | 2001-11-29 | 2002-11-29 | 半导体结构化工艺 |
Country Status (10)
Country | Link |
---|---|
US (1) | US7828983B2 (zh) |
EP (1) | EP1461834A4 (zh) |
JP (1) | JP4530662B2 (zh) |
KR (1) | KR20040068928A (zh) |
CN (1) | CN1613155B (zh) |
CA (1) | CA2467112C (zh) |
IL (1) | IL162190A0 (zh) |
MY (1) | MY144264A (zh) |
WO (1) | WO2003047004A1 (zh) |
ZA (1) | ZA200405144B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102097534A (zh) * | 2010-11-18 | 2011-06-15 | 中国科学院宁波材料技术与工程研究所 | 同时形成晶体硅太阳能电池pn结和氮化硅减反射膜的方法 |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AUPR174800A0 (en) | 2000-11-29 | 2000-12-21 | Australian National University, The | Semiconductor processing |
US7057256B2 (en) | 2001-05-25 | 2006-06-06 | President & Fellows Of Harvard College | Silicon-based visible and near-infrared optoelectric devices |
US7442629B2 (en) | 2004-09-24 | 2008-10-28 | President & Fellows Of Harvard College | Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate |
US8227688B1 (en) | 2005-10-17 | 2012-07-24 | Solaria Corporation | Method and resulting structure for assembling photovoltaic regions onto lead frame members for integration on concentrating elements for solar cells |
US7910822B1 (en) | 2005-10-17 | 2011-03-22 | Solaria Corporation | Fabrication process for photovoltaic cell |
TWI267897B (en) * | 2005-11-10 | 2006-12-01 | Tatung Co | Substrate with anti-reflection layer and its manufacturing method |
EP1965439A3 (de) * | 2007-02-28 | 2010-03-24 | Centrotherm Photovoltaics Technology GmbH | Verfahren zur Oberflächentexturierung |
US7910392B2 (en) | 2007-04-02 | 2011-03-22 | Solaria Corporation | Method and system for assembling a solar cell package |
US8049098B2 (en) | 2007-09-05 | 2011-11-01 | Solaria Corporation | Notch structure for concentrating module and method of manufacture using photovoltaic strips |
US7910035B2 (en) | 2007-12-12 | 2011-03-22 | Solaria Corporation | Method and system for manufacturing integrated molded concentrator photovoltaic device |
US20110041910A1 (en) * | 2009-08-18 | 2011-02-24 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and manufacturing method thereof |
US9673243B2 (en) | 2009-09-17 | 2017-06-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
US9911781B2 (en) | 2009-09-17 | 2018-03-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
US8101522B2 (en) * | 2010-02-25 | 2012-01-24 | National Taiwan University | Silicon substrate having nanostructures and method for producing the same and application thereof |
US20110212622A1 (en) * | 2010-02-26 | 2011-09-01 | International Business Machines Corporation | Surface texturing using a low quality dielectric layer |
US8692198B2 (en) | 2010-04-21 | 2014-04-08 | Sionyx, Inc. | Photosensitive imaging devices and associated methods |
US20120146172A1 (en) | 2010-06-18 | 2012-06-14 | Sionyx, Inc. | High Speed Photosensitive Devices and Associated Methods |
US8440494B2 (en) | 2011-05-20 | 2013-05-14 | International Business Machines Corporation | Single-crystalline silicon alkaline texturing with glycerol or ethylene glycol additives |
USD699176S1 (en) | 2011-06-02 | 2014-02-11 | Solaria Corporation | Fastener for solar modules |
US9496308B2 (en) | 2011-06-09 | 2016-11-15 | Sionyx, Llc | Process module for increasing the response of backside illuminated photosensitive imagers and associated methods |
US8637405B2 (en) | 2011-06-21 | 2014-01-28 | International Business Machines Corporation | Silicon surface texturing method for reducing surface reflectance |
CN103946867A (zh) | 2011-07-13 | 2014-07-23 | 西奥尼克斯公司 | 生物计量成像装置和相关方法 |
US9064764B2 (en) | 2012-03-22 | 2015-06-23 | Sionyx, Inc. | Pixel isolation elements, devices, and associated methods |
US20140110805A1 (en) * | 2012-10-18 | 2014-04-24 | Infineon Technologies Dresden Gmbh | Silicon light trap devices, systems and methods |
US11538949B2 (en) | 2013-02-03 | 2022-12-27 | Mark R. Schroeder | Sensor comprising a photovoltaic device |
US10872988B1 (en) | 2013-02-03 | 2020-12-22 | Mark R. Schroeder | Photovoltaic device |
WO2014127376A2 (en) | 2013-02-15 | 2014-08-21 | Sionyx, Inc. | High dynamic range cmos image sensor having anti-blooming properties and associated methods |
WO2014151093A1 (en) | 2013-03-15 | 2014-09-25 | Sionyx, Inc. | Three dimensional imaging utilizing stacked imager devices and associated methods |
US8957490B2 (en) | 2013-06-28 | 2015-02-17 | Infineon Technologies Dresden Gmbh | Silicon light trap devices |
US9209345B2 (en) * | 2013-06-29 | 2015-12-08 | Sionyx, Inc. | Shallow trench textured regions and associated methods |
US9911878B2 (en) * | 2013-09-10 | 2018-03-06 | Advanced Silicon Group, Inc. | Metal-assisted etch combined with regularizing etch |
US8951825B1 (en) | 2013-09-10 | 2015-02-10 | Palo Alto Research Center Incorporated | Solar cell texturing |
TWI543391B (zh) * | 2015-04-09 | 2016-07-21 | 新日光能源科技股份有限公司 | 太陽能電池及其製作方法 |
DE102020111371A1 (de) * | 2020-02-27 | 2021-09-02 | Taiwan Semiconductor Manufacturing Co. Ltd. | Absorptionsanreicherungsstruktur zur erhöhung der quanteneffizienz eines bildsensors |
US11538836B2 (en) * | 2020-08-13 | 2022-12-27 | Omnivision Technologies, Inc. | Cell deep trench isolation pyramid structures for CMOS image sensors |
Family Cites Families (152)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3278811A (en) | 1960-10-04 | 1966-10-11 | Hayakawa Denki Kogyo Kabushiki | Radiation energy transducing device |
US3422527A (en) | 1965-06-21 | 1969-01-21 | Int Rectifier Corp | Method of manufacture of high voltage solar cell |
GB1186340A (en) | 1968-07-11 | 1970-04-02 | Standard Telephones Cables Ltd | Manufacture of Semiconductor Devices |
US3690953A (en) | 1970-09-10 | 1972-09-12 | Us Air Force | Vertical junction hardened solar cell |
JPS495265A (zh) | 1972-04-28 | 1974-01-17 | ||
US4409422A (en) | 1974-11-08 | 1983-10-11 | Sater Bernard L | High intensity solar cell |
US4332973A (en) | 1974-11-08 | 1982-06-01 | Sater Bernard L | High intensity solar cell |
US4516314A (en) | 1974-11-08 | 1985-05-14 | Sater Bernard L | Method of making a high intensity solar cell |
US3985579A (en) | 1975-11-26 | 1976-10-12 | The United States Of America As Represented By The Secretary Of The Air Force | Rib and channel vertical multijunction solar cell |
US4082570A (en) | 1976-02-09 | 1978-04-04 | Semicon, Inc. | High intensity solar energy converter |
US4110122A (en) | 1976-05-26 | 1978-08-29 | Massachusetts Institute Of Technology | High-intensity, solid-state-solar cell device |
US4038104A (en) | 1976-06-07 | 1977-07-26 | Kabushiki Kaisha Suwa Seikosha | Solar battery |
JPS5373075A (en) * | 1976-12-13 | 1978-06-29 | Fujitsu Ltd | Treatment method for wafer surface |
US4153476A (en) | 1978-03-29 | 1979-05-08 | Nasa | Double-sided solar cell package |
US4278473A (en) | 1979-08-24 | 1981-07-14 | Varian Associates, Inc. | Monolithic series-connected solar cell |
US4444992A (en) | 1980-11-12 | 1984-04-24 | Massachusetts Institute Of Technology | Photovoltaic-thermal collectors |
DE3047383A1 (de) | 1980-12-16 | 1982-07-15 | Siemens AG, 1000 Berlin und 8000 München | Solarzelle mit erhoehtem wirkungsgrad |
US4527183A (en) | 1981-07-10 | 1985-07-02 | General Electric Company | Drilled, diffused radiation detector |
US4407695A (en) * | 1981-12-31 | 1983-10-04 | Exxon Research And Engineering Co. | Natural lithographic fabrication of microstructures over large areas |
US4409423A (en) | 1982-03-09 | 1983-10-11 | The United States Of America As Represented By The Secretary Of The Air Force | Hole matrix vertical junction solar cell |
US4554727A (en) | 1982-08-04 | 1985-11-26 | Exxon Research & Engineering Company | Method for making optically enhanced thin film photovoltaic device using lithography defined random surfaces |
US4633031A (en) | 1982-09-24 | 1986-12-30 | Todorof William J | Multi-layer thin film, flexible silicon alloy photovoltaic cell |
JPS5959883A (ja) * | 1982-09-30 | 1984-04-05 | Fujitsu Ltd | 粗面化方法 |
JPS59123279A (ja) * | 1982-12-28 | 1984-07-17 | Semiconductor Energy Lab Co Ltd | 光電変換装置作製方法 |
JPS59123283A (ja) | 1982-12-28 | 1984-07-17 | Semiconductor Energy Lab Co Ltd | 光電変換装置 |
JPS59123279U (ja) | 1983-02-09 | 1984-08-20 | オリオン機械株式会社 | 気体冷却装置の除霜装置 |
JPS59227168A (ja) | 1983-06-08 | 1984-12-20 | Fuji Electric Corp Res & Dev Ltd | 半導体放射線検出器 |
US4626613A (en) | 1983-12-23 | 1986-12-02 | Unisearch Limited | Laser grooved solar cell |
GB8417303D0 (en) | 1984-07-06 | 1984-08-08 | Secr Defence | Infra-red detector |
JPS61108176A (ja) * | 1984-11-01 | 1986-05-26 | Fuji Electric Co Ltd | 粗面化方法 |
JPS61108176U (zh) | 1984-12-19 | 1986-07-09 | ||
DE3504705A1 (de) | 1985-02-12 | 1986-08-14 | Siemens AG, 1000 Berlin und 8000 München | Aperturblende mit zellenfoermiger mehrlochstruktur und austastelektroden zur erzeugung einer mehrzahl von individuell austastbaren korpuskularstrahlsonden fuer ein lithografiegeraet |
JPS625671A (ja) | 1985-07-02 | 1987-01-12 | Sanyo Electric Co Ltd | 光起電力装置の製造方法 |
JPS6254927A (ja) * | 1985-09-03 | 1987-03-10 | Sanyo Electric Co Ltd | 光起電力装置 |
JPH0753782B2 (ja) | 1985-12-23 | 1995-06-07 | 株式会社ブリヂストン | 透明膜および該膜を有する積層物 |
US4805006A (en) | 1987-03-25 | 1989-02-14 | Matsushita Electric Works, Ltd. | Light receiving element |
US4892592A (en) | 1987-03-26 | 1990-01-09 | Solarex Corporation | Thin film semiconductor solar cell array and method of making |
DE3803769A1 (de) | 1988-02-08 | 1989-08-17 | Siemens Ag | Verfahren zum herstellen von duennen, bandfoermigen siliziumkristallen mit ebener oberflaeche, geeignet fuer die solarzellenfertigung |
US4883561A (en) | 1988-03-29 | 1989-11-28 | Bell Communications Research, Inc. | Lift-off and subsequent bonding of epitaxial films |
US4989059A (en) | 1988-05-13 | 1991-01-29 | Mobil Solar Energy Corporation | Solar cell with trench through pn junction |
US5082791A (en) | 1988-05-13 | 1992-01-21 | Mobil Solar Energy Corporation | Method of fabricating solar cells |
US5081049A (en) | 1988-07-18 | 1992-01-14 | Unisearch Limited | Sculpted solar cell surfaces |
US5389158A (en) | 1989-04-17 | 1995-02-14 | The Boeing Company | Low bandgap photovoltaic cell with inherent bypass diode |
US5116464A (en) | 1989-06-02 | 1992-05-26 | Massachusetts Institute Of Technology | Cesium hydroxide etch of a semiconductor crystal |
US5011544A (en) | 1989-09-08 | 1991-04-30 | Solarex Corporation | Solar panel with interconnects and masking structure, and method |
US5081409A (en) * | 1989-11-13 | 1992-01-14 | Performance Controls, Inc. | Pulse-width modulated circuit for driving a load |
US5073230A (en) | 1990-04-17 | 1991-12-17 | Arizona Board Of Regents Acting On Behalf Of Arizona State University | Means and methods of lifting and relocating an epitaxial device layer |
DK170189B1 (da) | 1990-05-30 | 1995-06-06 | Yakov Safir | Fremgangsmåde til fremstilling af halvlederkomponenter, samt solcelle fremstillet deraf |
US5067985A (en) | 1990-06-08 | 1991-11-26 | The United States Of America As Represented By The Secretary Of The Air Force | Back-contact vertical-junction solar cell and method |
KR930008580B1 (ko) | 1990-06-22 | 1993-09-09 | 현대전자산업 주식회사 | 표면적이 극대화된 실리콘층 및 그 제조방법 |
DE4021541C1 (zh) | 1990-07-06 | 1991-12-19 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 8000 Muenchen, De | |
US5136346A (en) | 1990-09-07 | 1992-08-04 | Motorola, Inc. | Photon stimulated variable capacitance effect devices |
US5098482A (en) | 1990-11-07 | 1992-03-24 | Solarex Corporation | Vertical junction solar cell |
US5139974A (en) * | 1991-01-25 | 1992-08-18 | Micron Technology, Inc. | Semiconductor manufacturing process for decreasing the optical refelctivity of a metal layer |
KR920018987A (ko) | 1991-03-23 | 1992-10-22 | 김광호 | 캐패시터의 제조방법 |
JP2837296B2 (ja) | 1991-10-17 | 1998-12-14 | シャープ株式会社 | 太陽電池 |
DE4202455C1 (zh) | 1992-01-29 | 1993-08-19 | Siemens Ag, 8000 Muenchen, De | |
JP3276682B2 (ja) | 1992-08-06 | 2002-04-22 | オリンパス光学工業株式会社 | 内視鏡の湾曲操作装置 |
US5266125A (en) | 1992-05-12 | 1993-11-30 | Astropower, Inc. | Interconnected silicon film solar cell array |
US5447576A (en) | 1992-08-03 | 1995-09-05 | Siemens Solar Industries International, Inc. | Composition and method for encapsulating a solar cell which minimizes thermal discoloration |
US5367217A (en) | 1992-11-18 | 1994-11-22 | Alliedsignal Inc. | Four bar resonating force transducer |
JPH06213554A (ja) | 1993-01-14 | 1994-08-02 | Fuji Electric Co Ltd | 冷気循環式オープンショーケース |
DE4310206C2 (de) | 1993-03-29 | 1995-03-09 | Siemens Ag | Verfahren zur Herstellung einer Solarzelle aus einer Substratscheibe |
US5344517A (en) | 1993-04-22 | 1994-09-06 | Bandgap Technology Corporation | Method for lift-off of epitaxial layers and applications thereof |
US5538902A (en) | 1993-06-29 | 1996-07-23 | Sanyo Electric Co., Ltd. | Method of fabricating a photovoltaic device having a three-dimensional shape |
US5391236A (en) | 1993-07-30 | 1995-02-21 | Spectrolab, Inc. | Photovoltaic microarray structure and fabrication method |
US5470761A (en) | 1993-09-13 | 1995-11-28 | Westinghouse Electric Corporation | Process for fabricating a front surface resonant mesh array detector |
JPH07188947A (ja) * | 1993-12-27 | 1995-07-25 | Sumitomo Metal Mining Co Ltd | 表面粗化方法 |
KR970002140B1 (ko) | 1993-12-27 | 1997-02-24 | 엘지반도체 주식회사 | 반도체 소자, 패키지 방법, 및 리드테이프 |
US5478402A (en) | 1994-02-17 | 1995-12-26 | Ase Americas, Inc. | Solar cell modules and method of making same |
JP3032422B2 (ja) | 1994-04-28 | 2000-04-17 | シャープ株式会社 | 太陽電池セルとその製造方法 |
US5466302A (en) | 1994-05-09 | 1995-11-14 | Regents Of The University Of California | Solar cell array interconnects |
US5474620A (en) | 1994-05-16 | 1995-12-12 | United Solar Systems Corporation | Cut resistant laminate for the light incident surface of a photovoltaic module |
EP0718873A3 (en) | 1994-12-21 | 1998-04-15 | MEMC Electronic Materials, Inc. | Cleaning process for hydrophobic silicon wafers |
JPH08213554A (ja) * | 1995-02-02 | 1996-08-20 | Miyazaki Oki Electric Co Ltd | 粗面ポリシリコン膜の形成方法 |
US5538563A (en) | 1995-02-03 | 1996-07-23 | Finkl; Anthony W. | Solar energy concentrator apparatus for bifacial photovoltaic cells |
US5641381A (en) | 1995-03-27 | 1997-06-24 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Preferentially etched epitaxial liftoff of InP material |
EP0771475B1 (de) | 1995-05-19 | 2005-12-21 | Dr. Johannes Heidenhain GmbH | Strahlungsempfindliches detektorelement |
KR100274293B1 (ko) | 1995-06-26 | 2001-01-15 | 야스카와 히데아키 | 결정성 반도체막 형성방법, 박막 트랜지스터 제조방법, 태양 전지 제조 방법 및 액티브 매트릭스형 액정 장치 |
JP2915327B2 (ja) | 1995-07-19 | 1999-07-05 | キヤノン株式会社 | 太陽電池モジュール及びその製造方法 |
US5567248A (en) | 1995-09-05 | 1996-10-22 | Chung; Darius | Modular solar cell contact arrangement |
US5851928A (en) * | 1995-11-27 | 1998-12-22 | Motorola, Inc. | Method of etching a semiconductor substrate |
US5733382A (en) | 1995-12-18 | 1998-03-31 | Hanoka; Jack I. | Solar cell modules and method of making same |
US5904546A (en) | 1996-02-12 | 1999-05-18 | Micron Technology, Inc. | Method and apparatus for dicing semiconductor wafers |
US5895530A (en) | 1996-02-26 | 1999-04-20 | Applied Materials, Inc. | Method and apparatus for directing fluid through a semiconductor processing chamber |
US6107161A (en) | 1996-06-07 | 2000-08-22 | Rohm Co., Ltd. | Semiconductor chip and a method for manufacturing thereof |
US5841179A (en) | 1996-08-28 | 1998-11-24 | Advanced Micro Devices, Inc. | Conductive layer with anti-reflective surface portion |
US5773791A (en) | 1996-09-03 | 1998-06-30 | Kuykendal; Robert | Water laser machine tool |
US6162658A (en) | 1996-10-14 | 2000-12-19 | Unisearch Limited | Metallization of buried contact solar cells |
US6091021A (en) | 1996-11-01 | 2000-07-18 | Sandia Corporation | Silicon cells made by self-aligned selective-emitter plasma-etchback process |
US5904548A (en) | 1996-11-21 | 1999-05-18 | Texas Instruments Incorporated | Trench scribe line for decreased chip spacing |
JP2001504994A (ja) | 1996-11-22 | 2001-04-10 | シーメンス アクチエンゲゼルシヤフト | マイクロメカニカル機能素子の製造方法 |
DE19650111B4 (de) | 1996-12-03 | 2004-07-01 | Siemens Solar Gmbh | Solarzelle mit geringer Abschattung und Verfahren zur Herstellung |
KR100243741B1 (ko) * | 1996-12-27 | 2000-02-01 | 김영환 | 반도체 소자의 제조방법 |
AUPO468697A0 (en) | 1997-01-21 | 1997-02-13 | Australian National University, The | A method of producing thin silicon epitaxial films |
JP3436858B2 (ja) | 1997-02-27 | 2003-08-18 | シャープ株式会社 | 薄膜太陽電池の製造方法 |
DE19710375C2 (de) | 1997-03-13 | 2002-11-07 | Micronas Semiconductor Holding | Verfahren zum Herstellen von räumlich strukturierten Bauteilen |
JP3772456B2 (ja) | 1997-04-23 | 2006-05-10 | 三菱電機株式会社 | 太陽電池及びその製造方法、半導体製造装置 |
JP3468670B2 (ja) | 1997-04-28 | 2003-11-17 | シャープ株式会社 | 太陽電池セルおよびその製造方法 |
US6180869B1 (en) | 1997-05-06 | 2001-01-30 | Ebara Solar, Inc. | Method and apparatus for self-doping negative and positive electrodes for silicon solar cells and other devices |
JP2002512737A (ja) * | 1997-05-08 | 2002-04-23 | ナノシステムズ,インコーポレイテッド | マイクロチャンネルプレートを製造するためのシリコンエッチング方法 |
US5994207A (en) | 1997-05-12 | 1999-11-30 | Silicon Genesis Corporation | Controlled cleavage process using pressurized fluid |
JP3805889B2 (ja) | 1997-06-20 | 2006-08-09 | 株式会社カネカ | 太陽電池モジュールおよびその製造方法 |
US5930644A (en) * | 1997-07-23 | 1999-07-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of forming a shallow trench isolation using oxide slope etching |
JPH11238689A (ja) * | 1997-08-08 | 1999-08-31 | Shigeo Yamamoto | エピタキシャル半導体ウエーハ |
US6008449A (en) | 1997-08-19 | 1999-12-28 | Cole; Eric D. | Reflective concentrating solar cell assembly |
JPH1168131A (ja) * | 1997-08-25 | 1999-03-09 | Citizen Watch Co Ltd | 太陽電池の製造方法 |
DE19741832A1 (de) | 1997-09-23 | 1999-03-25 | Inst Solarenergieforschung | Verfahren zur Herstellung einer Solarzelle und Solarzelle |
US6320116B1 (en) | 1997-09-26 | 2001-11-20 | Evergreen Solar, Inc. | Methods for improving polymeric materials for use in solar cell applications |
JP3618973B2 (ja) | 1997-10-01 | 2005-02-09 | キヤノン株式会社 | 半導体装置及び光検出装置の製造方法 |
US6005276A (en) | 1997-11-12 | 1999-12-21 | Advanced Photonix, Inc. | Solid state photodetector with light-responsive rear face |
JPH11163284A (ja) * | 1997-12-01 | 1999-06-18 | Matsushita Electron Corp | 半導体記憶装置の製造方法 |
US6455873B1 (en) | 1997-12-03 | 2002-09-24 | State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of The University Of Oregon | Devices having a semiconductor/conducting polymer interface |
US5972732A (en) | 1997-12-19 | 1999-10-26 | Sandia Corporation | Method of monolithic module assembly |
JPH11186572A (ja) | 1997-12-22 | 1999-07-09 | Canon Inc | 光起電力素子モジュール |
US6074514A (en) * | 1998-02-09 | 2000-06-13 | Applied Materials, Inc. | High selectivity etch using an external plasma discharge |
JPH11236689A (ja) | 1998-02-25 | 1999-08-31 | Babcock Hitachi Kk | 発電プラントの水処理装置および水処理方法 |
JP3174549B2 (ja) | 1998-02-26 | 2001-06-11 | 株式会社日立製作所 | 太陽光発電装置及び太陽光発電モジュール並びに太陽光発電システムの設置方法 |
US6166318A (en) | 1998-03-03 | 2000-12-26 | Interface Studies, Inc. | Single absorber layer radiated energy conversion device |
US6265741B1 (en) * | 1998-04-06 | 2001-07-24 | Siemens Aktiengesellschaft | Trench capacitor with epi buried layer |
US6156967A (en) | 1998-06-04 | 2000-12-05 | Tecstar Power Systems, Inc. | Modular glass covered solar cell array |
US5994641A (en) | 1998-04-24 | 1999-11-30 | Ase Americas, Inc. | Solar module having reflector between cells |
US6110793A (en) | 1998-06-24 | 2000-08-29 | Taiwan Semiconductor Manufacturing Company | Method for making a trench isolation having a conformal liner oxide and top and bottom rounded corners for integrated circuits |
JP2000022185A (ja) * | 1998-07-03 | 2000-01-21 | Sharp Corp | 太陽電池セル及びその製造方法 |
US6156620A (en) * | 1998-07-22 | 2000-12-05 | Lsi Logic Corporation | Isolation trench in semiconductor substrate with nitrogen-containing barrier region, and process for forming same |
KR100277695B1 (ko) * | 1998-09-12 | 2001-02-01 | 정선종 | 에스 오 아이 광도파로를 이용한 하이브리드 광집적회로용 기판 제조방법 |
JP2000101111A (ja) | 1998-09-17 | 2000-04-07 | Sharp Corp | 太陽電池の製造方法 |
JP3259692B2 (ja) | 1998-09-18 | 2002-02-25 | 株式会社日立製作所 | 集光型太陽光発電モジュール及びその製造方法並びに集光型太陽光発電システム |
DE19849902A1 (de) | 1998-10-29 | 2000-05-11 | Roland Sittig | Halbleiterbauelement |
US6126311A (en) | 1998-11-02 | 2000-10-03 | Claud S. Gordon Company | Dew point sensor using mems |
AUPP699798A0 (en) * | 1998-11-06 | 1998-12-03 | Pacific Solar Pty Limited | Thin films with light trapping |
US6265653B1 (en) | 1998-12-10 | 2001-07-24 | The Regents Of The University Of California | High voltage photovoltaic power converter |
US6262358B1 (en) | 1999-02-18 | 2001-07-17 | Sharp Kabushiki Kaisha | Solar cell module and solar cell panel using the same |
JP2000261008A (ja) | 1999-03-10 | 2000-09-22 | Mitsubishi Electric Corp | 太陽電池用シリコン基板の粗面化方法 |
JP4017281B2 (ja) * | 1999-03-23 | 2007-12-05 | 三洋電機株式会社 | 太陽電池及びその製造方法 |
US6140603A (en) | 1999-03-31 | 2000-10-31 | Taiwan Semiconductor Manufacturing Co., Ltd | Micro-cleavage method for specimen preparation |
JP2000294813A (ja) | 1999-04-07 | 2000-10-20 | Bridgestone Corp | 太陽電池用バックカバー材及び太陽電池 |
US6492704B1 (en) | 1999-04-15 | 2002-12-10 | Trenton G. Coroy | Photodiodes with photoconductive gain enhancement |
US6406636B1 (en) | 1999-06-02 | 2002-06-18 | Megasense, Inc. | Methods for wafer to wafer bonding using microstructures |
JP3368876B2 (ja) | 1999-11-05 | 2003-01-20 | 株式会社東京精密 | 半導体チップ製造方法 |
JP2001148500A (ja) | 1999-11-22 | 2001-05-29 | Sanyo Electric Co Ltd | 太陽電池モジュール |
JP4441102B2 (ja) | 1999-11-22 | 2010-03-31 | キヤノン株式会社 | 光起電力素子及びその製造方法 |
KR100348177B1 (ko) | 2000-01-13 | 2002-08-09 | 조동일 | 단결정 실리콘의 마이크로머시닝 기법에서의 깊은 트렌치절연막을 이용한 절연 방법 |
JP2001257371A (ja) * | 2000-03-13 | 2001-09-21 | Hitachi Ltd | 太陽電池作製方法及び太陽電池並びに集光型太陽電池モジュール |
DE10020541A1 (de) | 2000-04-27 | 2001-11-08 | Univ Konstanz | Verfahren zur Herstellung einer Solarzelle und Solarzelle |
JP2001332529A (ja) * | 2000-05-19 | 2001-11-30 | Daido Steel Co Ltd | 単結晶半導体基板の表面処理方法、および単結晶半導体基板の電極層形成方法 |
US6553729B1 (en) | 2000-06-09 | 2003-04-29 | United Solar Systems Corporation | Self-adhesive photovoltaic module |
DE10031252A1 (de) | 2000-06-27 | 2002-01-10 | Bosch Gmbh Robert | Verfahren zur Zertrennung eines Substratwafers in eine Anzahl von Substratchips |
AUPR174800A0 (en) | 2000-11-29 | 2000-12-21 | Australian National University, The | Semiconductor processing |
US6649287B2 (en) * | 2000-12-14 | 2003-11-18 | Nitronex Corporation | Gallium nitride materials and methods |
KR100378016B1 (ko) | 2001-01-03 | 2003-03-29 | 삼성에스디아이 주식회사 | 태양 전지용 반도체 기판의 텍스처링 방법 |
US6515217B1 (en) | 2001-09-11 | 2003-02-04 | Eric Aylaian | Solar cell having a three-dimensional array of photovoltaic cells enclosed within an enclosure having reflective surfaces |
-
2002
- 2002-11-29 CA CA2467112A patent/CA2467112C/en not_active Expired - Fee Related
- 2002-11-29 CN CN028268679A patent/CN1613155B/zh not_active Expired - Fee Related
- 2002-11-29 WO PCT/AU2002/001625 patent/WO2003047004A1/en active Application Filing
- 2002-11-29 IL IL16219002A patent/IL162190A0/xx unknown
- 2002-11-29 MY MYPI20091170A patent/MY144264A/en unknown
- 2002-11-29 US US10/497,248 patent/US7828983B2/en not_active Expired - Fee Related
- 2002-11-29 JP JP2003548320A patent/JP4530662B2/ja not_active Expired - Fee Related
- 2002-11-29 EP EP02779038A patent/EP1461834A4/en not_active Withdrawn
- 2002-11-29 KR KR10-2004-7008186A patent/KR20040068928A/ko active Search and Examination
-
2004
- 2004-06-28 ZA ZA200405144A patent/ZA200405144B/en unknown
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102097534A (zh) * | 2010-11-18 | 2011-06-15 | 中国科学院宁波材料技术与工程研究所 | 同时形成晶体硅太阳能电池pn结和氮化硅减反射膜的方法 |
Also Published As
Publication number | Publication date |
---|---|
MY144264A (en) | 2011-08-29 |
KR20040068928A (ko) | 2004-08-02 |
CA2467112C (en) | 2010-07-27 |
CN1613155B (zh) | 2010-05-05 |
IL162190A0 (en) | 2005-11-20 |
WO2003047004A1 (en) | 2003-06-05 |
ZA200405144B (en) | 2006-03-29 |
EP1461834A4 (en) | 2010-06-09 |
US20050104163A1 (en) | 2005-05-19 |
JP4530662B2 (ja) | 2010-08-25 |
CA2467112A1 (en) | 2003-06-05 |
US7828983B2 (en) | 2010-11-09 |
JP2005510884A (ja) | 2005-04-21 |
EP1461834A1 (en) | 2004-09-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1613155A (zh) | 半导体结构化工艺 | |
US5080725A (en) | Optical properties of solar cells using tilted geometrical features | |
KR101387715B1 (ko) | 나노 텍스쳐링 구조를 갖는 반도체 웨이퍼 기판을 포함하는벌크형 태양전지의 제조방법 | |
AU2022206802B2 (en) | Solar Cell, Manufacturing Method Thereof, and Photovoltaic Module | |
US7563722B2 (en) | Method of making a textured surface | |
JP2014512673A (ja) | 向上された青色感度を有する効率的なブラックシリコン光起電装置 | |
AU2006243111A1 (en) | Solar cell manufacturing method and solar cell | |
KR20110101141A (ko) | 2 단계 도핑에 의한 태양전지의 제조방법 | |
CN1507075A (zh) | 单晶硅太阳能电池的表面结构及其制作方法 | |
KR20110115071A (ko) | 태양전지소자의 제조방법 및 그 방법에 의하여 제조된 태양전지소자 | |
US20080121955A1 (en) | Silicon-based ferroelectric memory material and memory | |
US9236509B2 (en) | Solar cells with patterned antireflective surfaces | |
EP2295386B1 (en) | Glass texturing | |
EP4014259A1 (en) | Perovskite/silicon tandem photovoltaic device | |
JPH0766437A (ja) | 光電変換装置用基板の製造方法 | |
AU2002342438C1 (en) | Semiconductor texturing process | |
TWI330384B (en) | Semiconductor texturing process | |
CN218975456U (zh) | 半导体器件 | |
US20110212622A1 (en) | Surface texturing using a low quality dielectric layer | |
KR20030079266A (ko) | 고효율 태양전지 및 그 제조 방법 | |
JP2019125766A (ja) | 太陽電池用シリコン基板、太陽電池用シリコン基板の製造方法及び太陽電池 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SHENZHEN FANGDA AUTOMATION SYSTEM CO., LTD. Free format text: FORMER OWNER: FANGDA GROUP CO., LTD. Effective date: 20101102 |
|
C56 | Change in the name or address of the patentee | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 518000 FANGDACHENG, LONGJING, XILI, NANSHAN DISTRICT, SHENZHEN CITY, GUANGDONG PROVINCE TO: 518057 FANGDACHENG, LONGJING, XILI, NANSHAN DISTRICT, SHENZHEN CITY, GUANGDONG PROVINCE |
|
CP01 | Change in the name or title of a patent holder |
Address after: New South Wales, Australia Patentee after: Origin Energy Solar Pty Ltd. Address before: New South Wales, Australia Patentee before: Origin Solar Energy Retail Ltd. |
|
ASS | Succession or assignment of patent right |
Owner name: CONVENTION PATENT APPLICATION Free format text: FORMER OWNER: TRANSFORM SOLAR PTY LTD. Effective date: 20150414 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20150414 Address after: Australian Capital Territory Patentee after: Convention Patent Application Address before: New South Wales, Australia Patentee before: Origin Energy Solar Pty Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100505 Termination date: 20171129 |
|
CF01 | Termination of patent right due to non-payment of annual fee |