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Numéro de publicationCN1621944 B
Type de publicationOctroi
Numéro de demandeCN 200310115503
Date de publication15 juin 2011
Date de dépôt28 nov. 2003
Date de priorité28 nov. 2003
Autre référence de publicationCN1621944A
Numéro de publication200310115503.5, CN 1621944 B, CN 1621944B, CN 200310115503, CN-B-1621944, CN1621944 B, CN1621944B, CN200310115503, CN200310115503.5
Inventeurs余国彬, 刘业异, 姚汉民, 胡松
Déposant中国科学院光电技术研究所
Exporter la citationBiBTeX, EndNote, RefMan
Liens externes:  SIPO, Espacenet
Projection light etching image-forming system
CN 1621944 B
Résumé
The projection photoetching polarization imaging system includes ellipsoidal lens, light source, high strength and has homogeneity lighting part, projection photoetching objective, silicon chip, etc. and features the polarizing mask set in the object plane of projection photoetching objective for polarizing modulation of the imaging light beam, and the imaging light beams transmitting the polarizing mask and with modifying polarization states and vertical electric field vibration directions in 45 deg to the edge of characteristic photoetching line. The light beams with vertical polarization directions produce no interference and results in no secondary peak of images of adjacent line on the silicon chip, less proximity effect and raised resolution. Thus, the present invention can result in raised photoetching imaging resolution and increased focal depth of projection photoetching and imaging system.
Revendications(1)  Langue du texte original : Chinois
1.投影光学光刻偏振成像系统包括椭球镜(1)、光源O)、高强度高均勻照明部件(3)、 投影光刻物镜(¾及硅片(6),其特征在于:在投影光刻物镜(¾的物面上放置了可对成像光束进行偏振调制的偏振掩模板G),所述偏振掩模板(4)在不透光区域(10)相邻的透光区域(11、12)附加上使成像光束相位产生180°变化的相移层(13),再在相移层(1¾上覆盖了一层能使成像光束的偏振方向互相垂直正交,而且偏振方向对于光刻特征线条边缘来说,具有45°的倾斜角的第一偏振膜层(7)和第二偏振膜层(8)。 1. The projection optical lithography imaging system includes polarization ellipsoid mirror (1), the light source O), high strength and uniform illumination means (3), projection lithography objective (¾ and wafers (6), characterized in that: projection lithography objective (¾ object plane that can be placed on the imaging polarization modulation of the polarization beam mask G), the polarization reticle (4) in the opaque region (10) adjacent to the light-transmissive regions (11, 12) so that the imaging beam to generate a phase change in the additional 180 ° phase shift on the layer (13), and then the phase-shift layer (1¾ covered with the direction of polarization of the imaging light beam enables orthogonally to each other, and the direction of polarization for lithography wherein the first polarizing film is the line edge, having an inclination angle of 45 ° (7) and a second polarizing film (8).
Description  Langue du texte original : Chinois

投影光学光刻偏振成像系统 Polarization projection optical lithography imaging system

[0001] 所属技术领域 [0001] The technical field

[0002] 本发明涉及一种超大规模集成电路生产设备分步重复投影光刻机和步进扫描投影光刻机高分辨力投影成像技术领域中的投影光学光刻偏振成像系统。 [0002] The present invention relates to an ultra large scale integrated circuit production equipment projection lithography step and repeat and step and scan projection aligner high resolution projection imaging art polarization projection optical lithography imaging system.

背景技术 Background

[0003] 对超大规模集成电路器件的迫切需求,促进了投影光学光刻技术的飞速发展,为了延长投影光学光刻技术的极限和寿命,近年来,常采用短波长、大数值孔径、以及离轴照明技术等等。 [0003] The urgent demand for VLSI devices, promote the rapid development of the projection optical lithography technology, in order to extend the limits of the projection optical lithography technology and life, in recent years, often with a short wavelength, a large numerical aperture, as well as from axis lighting technologies. 然而随着数值孔径的增大,曝光波长的缩短,基于偏振性的矢量衍射效应对光刻图形的影响越来越大,如光刻的最小特征尺寸接近和低于曝光波长;高数值孔径的投影光学系统的使用导致了入射光波严重倾斜;反射和由硅片空间形状造成的各种影响;以及照明光在光刻胶中的散射效应等等。 However, with the increase of the numerical aperture, the exposure wavelength is shortened on the lithographic pattern based on the vector diffraction polarizing effect increasing, lithographic minimum feature size is less than the exposure wavelength and close; high numerical aperture using a projection optical system leads to serious inclined incident wave; reflection and various effects caused by the shape of the wafer space; and a lighting light scattering effect in the photoresist and so on.

[0004] 现在我国还没有投影光学光刻偏振成像系统,只有一般的投影光学光刻成像系统。 [0004] Now, China has no polarization projection optical lithography imaging system, only the general projection optical lithography imaging system. 现有投影光学光刻成像系统的不足:随着数值孔径(NA)的增大、波长的缩短,基于偏振特性的矢量衍射效应对光刻图形的影响越来越大,不能进行精细的线条图形制作。 Deficiencies of the prior projection optical lithographic imaging systems: As the numerical aperture (NA) is increased, the wavelength is shortened on the vector diffraction effects affect the polarization properties of the lithographic pattern increasing, graphics can not be fine lines production.

发明内容 DISCLOSURE

[0005] 本发明需要解决的技术问题是:克服上述现有技术的不足,而提供一种投影光学光刻偏振成像系统,在光刻掩模上直接制作对成像光束进行偏振调制的偏振膜,既保证偏振光成像,又能提高成像对比度,较大地提高投影光学成像光刻分辩力,同时也能增大焦深。 [0005] The technical problem to be solved in the present invention are: to overcome the deficiencies of the prior art, to provide a lithographic projection optical polarization imaging system, photoresist mask directly on the polarizing film is produced on the imaging beam polarization modulation, both to ensure the polarized light imaging, but also improve the image contrast, greatly improve the optical imaging projection lithography differentiate force, but also to increase the depth of focus.

[0006] 本发明的技术解决方案是:投影光学光刻偏振成像系统,包括椭球镜、光源、高强度高均勻照明部件、投影光刻物镜及硅片,其特征在于:在投影光刻物镜的物面上放置了可对成像光束进行偏振调制的偏振掩模板。 [0006] The technical solution of the present invention are: a projection optical lithography polarization imaging system comprising ellipsoidal mirror, light, high strength and uniform illumination means projection lithography lens and wafer, comprising: a projection lithography objective The substance can be placed on the surface of the imaging beam polarization modulation of the polarization mask.

[0007] 所述的偏振掩模板由石英基板,和在石英基板上的不透光部位相邻的透光部位制作有对成像光束进行不同线偏振调制的两种偏振膜层。 [0007] The polarization of the mask by a quartz plate, and the opacity of the adjacent portion of the transparent quartz substrate production sites have different imaging beam linear polarization modulation of the two polarizing film.

[0008] 所述的两种偏振膜层所调制的线偏振光相互垂直交叉,而且两种偏振膜层所调制的线偏振光都与光刻特征线条边缘有45°夹角。 Two polarizing film [0008] said modulated linear polarized light intersecting each other perpendicularly, and two polarizing films are modulated linearly polarized light with the lithographic feature line edge angle of 45 °.

[0009] 所述偏振掩模板的石英基板上还制作了使透射偏振光相位发生180°改变的相移层。 [0009] The polarization mask quartz plate also produced so that the transmission polarization phase change occurs 180 ° phase shift layer.

[0010] 本发明与现有技术相比具有如下优点: [0010] The present invention over the prior art has the following advantages:

[0011] 1、在本发明中,成像光束的偏振方向影响系统的传递函数,将掩模产生的高空间频率信号转换成有限数值孔径的物镜能接受的底空间频率信号,然后由物镜将这些低频信息在像面转换回其原始频率,精确成像,进一步了提高分辨率。 [0011] 1, in the present invention, the polarization direction of the impact beam imaging system transfer function, the high spatial frequency signal generated by the mask is converted into a limited numerical aperture of the objective lens substrate acceptable spatial frequency signal, and then by the objective lens to the low frequency information in the image plane is converted back to its original frequency, precise imaging, further improving the resolution.

[0012] 2、本发明中的物面放置偏振掩模板实现偏振光成像,针对不同的特征线条,可以制作不同的偏振掩模板,而不需对传统投影成像系统做任何改变。 [0012] 2, the present invention was placed face mask to achieve polarized light polarization imaging characteristics for different lines, can produce different polarization mask, without the need for traditional projection imaging systems to make any changes.

[0013] 3、本发明加入了偏振掩模板改变了原来成像系统三束光成像为两束光成像,进一步提高了分辨力,由于二束光成像,光程差为零,成像焦深也得到了提高。 [0013] 3, the present invention is added to the original polarization mask changed three beams forming the imaging system into two imaging beams, to further improve the resolution, since the two imaging beam, the optical path difference is zero, the imaging depth of focus has also been improved.

[0014] 4、在深亚微米和超深亚微米级范围内超微细图形中,都可以应用投影光刻投影光学光刻偏振成像系统,提高分辨力和焦深。 [0014] 4, in ultra deep submicron and deep submicron range ultrafine graph, you can use optical projection lithography projection lithography polarization imaging system to improve the resolution and depth of focus.

附图说明: Brief description:

[0015] 图1为本发明的结构示意图; The structure of the present invention [0015] FIG. 1 schematic;

[0016] 图2A为发明中偏振掩模板实施例1的结构示意图; [0016] FIG. 2A structure diagram illustrating an embodiment of the invention the polarization mask;

[0017] 图2B为图2A中偏振掩模板透过率曲线图; [0017] FIG. 2A 2B is a polarization mask transmission graph;

[0018] 图2C为图2A中偏振掩模板透过率曲线图; [0018] FIG. 2A, 2C is a polarization mask transmission graph;

[0019] 图3A为本发明偏振掩模板实施例2的结构示意图; [0019] the present invention, FIG. 3A polarization mask structure diagram of Example 2;

[0020] 图;3B为图3A中偏振掩模板透过率曲线图; [0020] FIG; 3B is a polarizing figure mask transmission graph 3A;

[0021] 图3C为图3A中偏振掩模板透过率曲线图。 [0021] FIG. 3C is a polarizing figure mask transmission graph 3A.

具体实施方式 DETAILED DESCRIPTION

[0022] 如图1所示,本发明由椭球镜1、光源2、高能量高均勻照明部件3、偏振掩模板4、 投影光刻物镜5、及硅片6等构成,光源2所发射的光被椭球镜1收集,并将光聚集通过高能量高均勻照明部件3照明偏振掩模板4,而偏振掩模板4上的超微细特征图形通过投影光刻物镜5投影成像于硅片6上,其中偏振掩模板4由石英基板9和在其上制作的可对成像光束进行不同线偏振调制的偏振膜层7和偏振膜层8组成,偏振膜层7所调制的线偏振光和偏振膜层8所调制的线偏振光相互垂直交叉。 [0022] shown in Figure 1, the present invention consists of an ellipsoidal mirror, a light source 2, a uniform high energy high illumination means 3, the polarization mask 4, projection lithography objective lens 5, and the silicon wafer 6 and the like, the light source 2 emitting The light is ellipsoidal mirror a collection of high-energy and high light gathering uniform illumination light polarization mask member 3 4, and ultra-fine feature pattern 4 on the polarization projection lithography mask through the objective lens 5 projected image on a silicon wafer 6 on which the mask 4 by the polarizer 9 and the quartz substrate on which the imaging beam can be made different linear polarization modulator and a polarization layer 7 consisting of a polarizing film 8, the modulation of the polarization layer 7 is linearly polarized and the polarization The modulation layer 8 mutually perpendicularly intersecting linearly polarized light.

[0023] 本发明的原理是:这两种偏振膜层制作在偏振掩模板上,偏振膜层调制成像光束而影响系统的传递函数,将掩模产生的高空间频率信号转换成有限数值孔径的物镜能接受的低空间频率信号,然后由物镜5将这些低频信息在硅片6面转换回其原始频率,精确成像,可在保证足够曝光容限的情况下进一步提高系统成像分辨能力;而且由于偏振方向相互垂直的光不产生干涉效应,若使掩模上相邻特征线条透过偏振方向相互垂直的光,则相邻线条的像在硅片上不会产生次峰,故邻近效应小,可进一步提高分辨率,进一步挖掘短波长大数值孔径投影成像系统的光刻分辨力能力。 [0023] The principles of the present invention is that: the two polarized polarizing film fabricated mask plate, polarizing film imaging light beam modulation transfer function of the system affect the high spatial frequency signal generated by the mask is converted into a limited numerical aperture lens can accept the low spatial frequency signal, and then by the objective lens 5 to the low frequency information in the silicon wafer 6 surface is converted back to its original frequency, precise imaging, in ensuring sufficient exposure margin not to further improve the system imaging resolving power; and because the direction of polarization perpendicular to each other does not produce light interference effects, when the character line direction of polarization perpendicular to each other through an optical mask adjacent, the adjacent image lines no second peak on a silicon wafer, so small proximity effect, can further improve the resolution, to further tap shortwave grew numerical aperture of projection lithography resolution capability of the imaging system.

[0024] 如图2所示为本发明的偏振掩模板实施例1,在不透光区域10相邻的透光区域覆盖了一层能使成像光束的偏振方向互相垂直正交,而且偏振方向对于光刻特征线条边缘来说,具有45°的倾斜角的偏振膜层7和偏振膜层8,在图2A中用箭头方向表示通过光束的偏振方向。 Polarization mask [0024] 2 in Example 1 of the present invention, the opaque region 10 adjacent the region covered with a layer of light-transmissive to make the direction of polarization of the imaging light beam orthogonally to each other, and the direction of polarization the inclination angle of the polarizing film for lithographic feature line edge, it has a 45 ° polarization layer 7 and 8, represented by the polarization direction of the light beam in a direction indicated by an arrow in FIG. 2A.

[0025] 如图3所示为本发明的偏振掩模板实施例2,在不透光区域10相邻的透光区域覆盖了一层能使成像光束的偏振方向互相垂直正交,而且偏振方向对于光刻特征线条边缘来说,具有45°的倾斜角的偏振膜层7和偏振膜层8,在图3A中用箭头方向表示通过光束的偏振方向;而且在本实施例中,在不透光区域10相邻的透光区域11和12附加上使成像光束相位产生180°变化的相移层13,再在相移层13上覆盖了一层能使成像光束的偏振方向互相垂直正交,而且偏振方向对于光刻特征线条边缘来说,具有45°的倾斜角的偏振膜层7和偏振膜层8,加入此相移层,可实现极高的分辨力,同时增大焦深。 [0025] polarization reticle invention is shown in FIG. 3 of Example 2, the opaque region 10 adjacent the region covered with a layer of light-transmissive to make the direction of polarization of the imaging light beam orthogonally to each other, and the direction of polarization For lithographic feature line edge, a polarizing film having an inclination angle of 45 ° polarization layer 7 and 8, represented by the polarization direction of the light beam in a direction indicated by an arrow in Fig. 3A; and in the present embodiment, the impermeable 11 and 12 are attached on the light-transmissive areas adjacent to the region 10 of the imaging beam to produce 180 ° phase change of the phase shift layer 13, and then in the phase shift layer 13 is covered with a polarization direction of the imaging beam enables orthogonally to each other the inclination angle of the polarization film, and the polarization direction of the lithographic feature line edge, it has a 45 ° polarization layer 7 and 8, to join this phase shift layer, can achieve high resolution, while increasing the depth of focus.

[0026] 本发明上述实施例中,针对特征线条的边缘,把两种偏振光的偏振方向倾斜45°的理由主要是:在线偏振光中,电场的振动方向,对入射面而言,垂直的TE (tran s ν er se electric)偏振状态和电场的振动方向在入射面内有TM(transverse magnetic)偏振状态;假如仅使TE偏振光和TM偏振光透过不透光部10的相邻透光部位,将会引起以下的问题,即照明光透过偏振掩模板,将会产生各种级数的衍射光束,衍射级数不同的成像光束, 通过入射面内的不同光路到达硅片面成像。 Reason for the above embodiments [0026] of the present invention, the line for the edge feature, the two polarized polarization direction 45 ° inclined mainly: linearly polarized light, the vibration direction of the electric field of the incident surface, the vertical TE (tran s ν er se electric) vibration direction of the polarization state of the electric field in the incident face a TM (transverse magnetic) polarization state; if only the TE-polarized and TM-polarized light through opaque through the adjacent portion 10 optical parts, will cause the following problem, i.e., the illumination light is transmitted through the polarization mask, it will produce a variety of order diffracted beams of different diffraction order imaging beams arriving wafer surface through different optical paths incident on the imaging plane . 对于TE偏振光,即使衍射光束级数不同,电场的振动方向垂直于入射面,因此,衍射光束的干涉效果最好,而对于TM偏振光,由于不同级数的衍射光束有不同的衍射角度,所以不同级数的衍射光束的电场振动方向将不同,这时衍射光束的干涉效果将最小。 For TE polarized light, even if the number of stages in different diffracted beam, the electric field vibration direction perpendicular to the incident surface, and therefore, the diffracted beam interference best, and for TM polarized light, due to the different order diffracted beams have different diffraction angles, Therefore, the electric field vibration direction different order diffracted beams of different, then the effect of the interference of the diffracted beam will be a minimum. 因此,在硅片面成像时,TE偏振光透过的部分光强度将变大, TM偏振光透过的部分光强度将变小,在整个投影光刻成像范围内将产生各处亮度不同。 Therefore, when the wafer surface imaging portion of the light intensity of TE polarized light becomes large, part of the light intensity of TM polarized light becomes smaller, in the whole range of the imaging projection lithography will produce different brightness around. 本发明实施例为了回避这种亮度差的产生,所以偏振掩模板上不透光部位10相邻的透光部位透过偏振方向相对于光刻特征线条边缘来说,具有45°的倾斜角的偏振光束,在偏振掩模板的透光部位就可以获得TE偏振光和TM偏振光的中间光强度。 Embodiments of the present invention to avoid the generation of such difference in luminance, thus polarizing opaque mask plate portion 10 adjacent to the light transmitting through the polarization direction with respect to the portion of a lithographic feature line edge, it has a tilt angle of 45 ° polarized beam in the transparent parts of the mask of polarization can be obtained TE polarized light and TM-polarized light intensity in the middle.

Citations de brevets
Brevet cité Date de dépôt Date de publication Déposant Titre
JPH05241324A Titre non disponible
US54590004 oct. 199317 oct. 1995Canon Kabushiki KaishaImage projection method and device manufacturing method using the image projection method
US2002019754120 juin 200126 déc. 2002Grobman Warren D.Method and apparatus for forming a pattern on an integrated circuit using differing exposure characteristics
Classifications
Classification internationaleH01L21/027, G02B27/28, G02B5/30, G03F7/20
Événements juridiques
DateCodeÉvénementDescription
1 juin 2005C06Publication
13 déc. 2006C10Entry into substantive examination
15 juin 2011C14Grant of patent or utility model
20 janv. 2016EXPYTermination of patent right or utility model