CN1621944B - Projection light etching image-forming system - Google Patents
Projection light etching image-forming system Download PDFInfo
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- CN1621944B CN1621944B CN 200310115503 CN200310115503A CN1621944B CN 1621944 B CN1621944 B CN 1621944B CN 200310115503 CN200310115503 CN 200310115503 CN 200310115503 A CN200310115503 A CN 200310115503A CN 1621944 B CN1621944 B CN 1621944B
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Abstract
The projection photoetching polarization imaging system includes ellipsoidal lens, light source, high strength and has homogeneity lighting part, projection photoetching objective, silicon chip, etc. and features the polarizing mask set in the object plane of projection photoetching objective for polarizing modulation of the imaging light beam, and the imaging light beams transmitting the polarizing mask and with modifying polarization states and vertical electric field vibration directions in 45 deg to the edge of characteristic photoetching line. The light beams with vertical polarization directions produce no interference and results in no secondary peak of images of adjacent line on the silicon chip, less proximity effect and raised resolution. Thus, the present invention can result in raised photoetching imaging resolution and increased focal depth of projection photoetching and imaging system.
Description
Affiliated technical field
The present invention relates to the projection optics photoetching polarized imaging system in a kind of VLSI (very large scale integrated circuit) production equipment wafer stepper machine and the advanced scanning projecting photoetching machine high resolution projection imaging technical field.
Background technology
To the active demand of VLSI (very large scale integrated circuit) device, promoted the develop rapidly of projection optics photoetching technique, for the limit and the life-span that prolongs the projection optics photoetching technique, in recent years, often adopt short wavelength, large-numerical aperture and off-axis illumination technology or the like.Yet along with the increase of numerical aperture, the shortening of exposure wavelength, increasing based on the vector diffraction effect of polarizability to the influence of litho pattern, as the minimum feature size of photoetching near and be lower than exposure wavelength; The use of the projection optical system of high-NA has caused the incident light wave knockdown; Reflection and the various influences that cause by the silicon space shape; And the scattering effect of illumination light in photoresist or the like.
China does not also have projection optics photoetching polarized imaging system now, has only general projection optics optical patterning system.The deficiency of existing projection optics optical patterning system: increasing to the influence of litho pattern along with the increase of numerical aperture (NA), the shortening of wavelength based on the vector diffraction effect of polarization characteristic, can not carry out meticulous bargraphs and make.
Summary of the invention
The technical issues that need to address of the present invention are: overcome above-mentioned the deficiencies in the prior art, and provide a kind of projection optics photoetching polarized imaging system, on mask, directly make the polarizing coating that imaging beam is carried out Polarization Modulation, both guaranteed the polarized light imaging, can improve image contrast again, improve projection optics imaging and photo-etching definition significantly, simultaneously also can increasing depth of focus.
Technical solution of the present invention is: projection optics photoetching polarized imaging system, comprise ellipsoidal mirror, light source, high strength high evenly illuminace component, light projection photoetching objective lens and silicon chip, it is characterized in that: on the object plane of light projection photoetching objective lens, placed the polarization photomask plate that can carry out Polarization Modulation imaging beam.
Described polarization photomask plate is by quartz base plate, and the printing opacity position adjacent with the light tight position on quartz base plate is manufactured with two kinds of polarizing films that imaging beam carried out different linear polarization modulation.
The mutual square crossing of linearly polarized light that described two kinds of polarizing films are modulated, and the linearly polarized light that two kinds of polarizing films are modulated all has 45 ° of angles with the lithographic features line edge.
Also made the phase shift layer that makes the transmission-polarizing light phase that 180 ° of changes take place on the quartz base plate of described polarization photomask plate.
The present invention compared with prior art has following advantage:
1, in the present invention, the polarization direction of imaging beam influences system transter, the high spatial frequency conversion of signals of mask generation is become the receptible base space frequency signal of object lens in finite value aperture, by object lens these low-frequency information are changed back its original frequency in image planes then, accurately image, further raising resolution.
2, the object plane among the present invention is placed polarization photomask plate and is realized the polarized light imaging, at different characteristic lines, can make different polarization photomask plates, and not need traditional projection imaging system is made any change.
3, the present invention has added polarization photomask plate and has changed original imaging system three-beam and be imaged as the two-beam imaging, has further improved resolving power, because two bundle photoimagings, optical path difference is zero, and the imaging depth of focus also is improved.
4, in deep-submicron and sub-micro level wide-ultra Micropicture, projection lithography projection optics photoetching polarized imaging system be can use, resolving power and depth of focus improved.
Description of drawings:
Fig. 1 is a structural representation of the present invention;
Fig. 2 A is the structural representation of polarization photomask plate embodiment 1 in the invention;
Fig. 2 B is polarization photomask plate transmittance curve figure among Fig. 2 A;
Fig. 2 C is polarization photomask plate transmittance curve figure among Fig. 2 A;
Fig. 3 A is the structural representation of polarization photomask plate embodiment 2 of the present invention;
Fig. 3 B is polarization photomask plate transmittance curve figure among Fig. 3 A;
Fig. 3 C is polarization photomask plate transmittance curve figure among Fig. 3 A.
Embodiment
As shown in Figure 1, the present invention is by ellipsoidal mirror 1, light source 2, the high evenly illuminace component 3 of high-energy, polarization photomask plate 4, light projection photoetching objective lens 5, and silicon chip 6 formations such as grade, the light that light source 2 is launched is collected by ellipsoidal mirror 1, and light assembled by the high evenly illuminace component 3 polarization of illumination mask plates 4 of high-energy, and the ultra tiny feature pattern on the polarization photomask plate 4 passes through light projection photoetching objective lens 5 projection imagings on silicon chip 6, wherein polarization photomask plate 4 by quartz base plate 9 and make thereon can form the mutual square crossing of linearly polarized light that linearly polarized light that polarizing film 7 is modulated and polarizing film 8 are modulated to polarizing film 7 and polarizing film 8 that imaging beam carries out different linear polarizations modulation.
Principle of the present invention is: these two kinds of polarizing films are produced on the polarization photomask plate, polarizing film is modulated imaging beam and is influenced system transter, the high spatial frequency conversion of signals of mask generation is become the receptible low spatial frequency signal of object lens in finite value aperture, by object lens 5 these low-frequency information are changed back its original frequency 6 of silicon chips then, accurately image can guarantee under the situation of enough exposure tolerance limits further raising system imaging resolution characteristic; And because the orthogonal light in polarization direction does not produce interference effect, the adjacent feature lines see through the orthogonal light in polarization direction on the mask if make, then the picture of adjacent lines can not produce secondary peak on silicon chip, so proximity effect is little, can further improve resolution, further excavate the photolithography resolution ability of short wavelength's large-numerical aperture projection imaging system.
Be illustrated in figure 2 as polarization photomask plate embodiment 1 of the present invention, covered the orthogonal quadrature in polarization direction that one deck can make imaging beam at light tight regional 10 adjacent transmission regions, and the polarization direction is for the lithographic features line edge, polarizing film 7 and polarizing film 8 with pitch angle of 45 ° are represented polarization direction by light beam with the direction of arrow in Fig. 2 A.
Be illustrated in figure 3 as polarization photomask plate embodiment 2 of the present invention, covered the orthogonal quadrature in polarization direction that one deck can make imaging beam at light tight regional 10 adjacent transmission regions, and the polarization direction is for the lithographic features line edge, polarizing film 7 and polarizing film 8 with pitch angle of 45 ° are represented polarization direction by light beam with the direction of arrow in Fig. 3 A; And in the present embodiment, make the imaging beam phase place produce the phase shift layer 13 of 180 ° of variations in light tight regional 10 adjacent transmission region 11 and 12 affixs, on phase shift layer 13, covered the orthogonal quadrature in polarization direction that one deck can make imaging beam again, and the polarization direction is for the lithographic features line edge, polarizing film 7 and polarizing film 8 with pitch angle of 45 °, add this phase shift layer, can realize high resolving power, simultaneously increasing depth of focus.
In the above embodiment of the present invention, edge at characteristic line, mainly be: in linearly polarized light the reason of 45 ° of the polarization direction of two kinds of polarized lights inclinations, the direction of vibration of electric field, for the plane of incidence, the direction of vibration of vertical TE (transverse electric) polarization state and electric field has TM (transverse magnetic) polarization state in the plane of incidence; If only make TE polarized light and TM polarized light see through light tight 10 adjacent printing opacity position, will cause following problem, be that illumination light sees through polarization photomask plate, will produce the diffracted beam of various progression, the imaging beam that diffraction progression is different arrives the silicon chip surface imaging by the different light paths in the plane of incidence.For the TE polarized light, even diffracted beam progression difference, the direction of vibration of electric field is perpendicular to the plane of incidence, therefore, the interference effect of diffracted beam is best, and for the TM polarized light, because the diffracted beam of different progression has different angle of diffraction, so the electric field direction of vibration of the diffracted beam of different progression is with difference, at this moment the interference effect of diffracted beam is with minimum.Therefore, when the silicon chip surface imaging, the part light intensity that the TE polarized light sees through will become greatly, and the part light intensity that the TM polarized light sees through will diminish, and will produce brightness difference everywhere in whole projecting etching imaging scope.The embodiment of the invention is in order to avoid the generation of this luminance difference, so 10 adjacent printing opacity positions, light tight position see through the polarization direction with respect to the lithographic features line edge on the polarization photomask plate, light beam with pitch angle of 45 ° just can obtain the intermediate light intensity of TE polarized light and TM polarized light at the printing opacity position of polarization photomask plate.
Claims (1)
1. projection optics photoetching polarized imaging system comprises ellipsoidal mirror (1), light source (2), the high evenly illuminace component (3) of high strength, light projection photoetching objective lens (5) and silicon chip (6), it is characterized in that: on the object plane of light projection photoetching objective lens (5), placed the polarization photomask plate (4) that can carry out Polarization Modulation imaging beam, described polarization photomask plate (4) is at light tight zone (10) adjacent transmission region (11,12) affix makes the imaging beam phase place produce the phase shift layer (13) of 180 ° of variations, on phase shift layer (13), covered the orthogonal quadrature in polarization direction that one deck can make imaging beam again, and the polarization direction has first polarizing film (7) and second polarizing film (8) at 45 ° pitch angle for the lithographic features line edge.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200310115503 CN1621944B (en) | 2003-11-28 | 2003-11-28 | Projection light etching image-forming system |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200310115503 CN1621944B (en) | 2003-11-28 | 2003-11-28 | Projection light etching image-forming system |
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| Publication Number | Publication Date |
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| CN1621944A CN1621944A (en) | 2005-06-01 |
| CN1621944B true CN1621944B (en) | 2011-06-15 |
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| CN 200310115503 Expired - Fee Related CN1621944B (en) | 2003-11-28 | 2003-11-28 | Projection light etching image-forming system |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7889315B2 (en) * | 2006-04-13 | 2011-02-15 | Asml Netherlands B.V. | Lithographic apparatus, lens interferometer and device manufacturing method |
| CN101441417B (en) * | 2007-11-22 | 2010-09-08 | 上海华虹Nec电子有限公司 | Polarized light source apparatus based on liquid crystal in photolithography lens imaging system |
| CN101975992B (en) * | 2010-09-30 | 2011-11-23 | 浙江大学 | Focal-depth expanding method and device based on phase and polarization |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5459000A (en) * | 1992-10-14 | 1995-10-17 | Canon Kabushiki Kaisha | Image projection method and device manufacturing method using the image projection method |
| US20020197541A1 (en) * | 2001-06-20 | 2002-12-26 | Grobman Warren D. | Method and apparatus for forming a pattern on an integrated circuit using differing exposure characteristics |
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2003
- 2003-11-28 CN CN 200310115503 patent/CN1621944B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5459000A (en) * | 1992-10-14 | 1995-10-17 | Canon Kabushiki Kaisha | Image projection method and device manufacturing method using the image projection method |
| US20020197541A1 (en) * | 2001-06-20 | 2002-12-26 | Grobman Warren D. | Method and apparatus for forming a pattern on an integrated circuit using differing exposure characteristics |
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| CN1621944A (en) | 2005-06-01 |
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