CN1628035A - 打印头的喷嘴防护装置 - Google Patents

打印头的喷嘴防护装置 Download PDF

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CN1628035A
CN1628035A CNA028290720A CN02829072A CN1628035A CN 1628035 A CN1628035 A CN 1628035A CN A028290720 A CNA028290720 A CN A028290720A CN 02829072 A CN02829072 A CN 02829072A CN 1628035 A CN1628035 A CN 1628035A
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nozzle
layer
print head
cover element
actuator
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CN100352654C (zh
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卡·西尔弗布鲁克
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Silverbrook Research Pty Ltd
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Abstract

一种具有多个打印头芯片(10)的喷墨打印头。每个打印头芯片(10)具有一个晶片衬片(16)。多个喷嘴装置(10)置于所述晶片衬片上。每个喷嘴(22)装置具有喷嘴腔壁和一个顶壁，所述喷嘴腔壁和顶壁确定一个喷嘴腔(34)和一个与所述的喷嘴腔流体连通的喷嘴口(24)。一个致动器工作地相对于每个喷嘴(10)设置，以经所述喷嘴口从所述喷嘴腔喷墨。一个喷嘴防护装置(80)置于所述打印头芯片的上方。所述喷嘴防护装置具有一个支承结构(86)和一个平面罩盖构件(82)。所述平面罩盖构件置于所述支承结构上。所述平面罩盖构件确定多个通道(84)。每个通道(84)与一个相应的喷嘴口(24)对准。所述平面罩盖构件(82)的厚度小于约300微米。

Description

打印头的喷嘴防护装置
发明领域
本发明涉及一种喷墨打印头。更特别地，本发明涉及一种具有至少一个打印头芯片的喷墨打印头，所述打印头芯片包括一个保护芯片的喷嘴防护装置。
背景技术
如在并入本文作为引的资料中所说明，本申请人开发了可以跨一个打印介质并且含有多达84,000个喷嘴总成的一种喷墨打印头。
这些打印头包括多个打印头芯片。所述打印头芯片包括物理地作用在墨上以从打印头芯片喷墨的微电子机械元件。这些元件是精密的并且要求小心地处理以避免损坏。
本发明构思了一种保护此种芯片的装置。
发明内容
根据本发明的，提供一种喷墨打印头，所述喷墨打印头包括：
至少一个打印头芯片，所述至少一个打印头芯片包含一个晶片衬片，
置于所述晶片衬片上的多个喷嘴装置，每个喷嘴装置具有喷嘴腔壁和一个顶壁，所述喷嘴腔壁和顶壁确定一个喷嘴腔和一个与所述的喷嘴腔流体连通的喷嘴口；和
一个致动器，所述致动器工作地相对于每个喷嘴设置，以按需要经喷嘴口从所述喷嘴腔喷墨，
一个置于打印头芯片上方的喷嘴防护装置，所述喷嘴防护装置包括：
一个从打印芯片伸出的支承结构；和
一个置于支承结构上的平面罩盖构件，所述平面罩盖构件确定多个通道，每个通道与一个相应的喷嘴口对准，平面罩盖构件的厚渡小于约300微米。
喷嘴防护装置的支承结构可以确定多个孔，所述孔允许空气进入打印头芯片与罩盖构件之间的区域，从而空气可以穿过所述通道。
罩盖构件和支承结构可以由一个晶片衬片确定。
本说明书中，术语“喷嘴”应理解为一个确定一个开口的元件而不是开口本身。
喷嘴可以包含一个确定开口的冠部、和一个从冠部垂下的裙部，所述裙部形成喷嘴腔的周壁的第一部分。
打印头可以包括一个确定在喷嘴腔的底部中的墨输入孔隙、一个围绕所述孔隙并确定喷嘴腔的周壁的第二部分的围壁。可以看出，所述裙部可以相对于衬片位移，更加具体地，向着和离开所述衬片位移以相应地进行喷墨和喷嘴腔充墨。所述连接壁可以用作阻止墨从所述腔泄露的阻挡器件。优选地，连接壁具有一个向内突起的唇部或者刮片部，所述唇部由于墨的粘滞性和在所述唇部与所述裙部之间的间距而起密封作用，用于当喷嘴向衬片位移时阻止喷墨。
优选地，致动器是热弯致动器。两个梁可以构成热弯致动器，一个是主动梁而另一个是被动梁。“主动梁”指在启动致动器时引起一个电流流经主动梁，而没有电流流经被动梁。可以看出，由于致动器的结构，当电流流经主动梁时主动梁由于电阻性加热而膨胀。由于被动梁受力变形，一个弯曲运动传递给连接构件以引起喷嘴位移。
所述梁可以一端锚着一到一个安装在衬片上并且从衬片伸出的锚固件上，而其对端连接到所述连接构件。连接构件可以包含一个具有连接到致动器的第一端的臂，同时喷嘴以悬臂梁的形式连接到所述臂的对端。从而在所述臂的所述第一端的一个弯曲运动在所述对端被放大以实现所需的喷嘴位移。
打印头可以包括多个喷嘴，各喷嘴有其设置在衬片上的关联的致动器和连接构件。每个喷嘴、连同其关联的致动器和连接构件可以构成一个喷嘴总成。
打印头可以通过平面整体沉积、印刷和蚀刻工艺形成，并且更具体地喷嘴总成可以通过这些工艺形成在打印头上。
衬片可以包括一个集成的驱动电路层。所述集成的驱动电路层可以借助CMOS制造工艺形成。
附图说明
下面将参照附图，以举例的方式说明本发明。在所述附图中
图1示出根据本发明的一个喷墨打印头的打印头芯片的一个喷嘴总成的三维示意图；
图2至4示出图1所示喷嘴总成的三维示意图；
图5示出构成图1至4的喷嘴总成的阵列的三维示意图；
图6放大地示出图5所示的阵列的一部分；
图7示出带有置于打印头芯片上方的一个喷嘴防护装置的一个喷墨打印头芯片的三维示意图；
图8a至8r示出一个喷墨打印头的一个喷嘴总成的制造中步骤的三维图示；
图9a至9r示出制造步骤的侧视剖面图；
图10a至10k示出在制造工艺中的各种步骤掩模布局；
图11a至11c示出根据图8和9的方法制造的喷嘴总成的操作的三维图示。
图12a至12c示出根据图8和9的方法制造的喷嘴总成的操作的侧视剖视图。
具体实施方式
首先参照图1，根据本发明的打印头的一个打印头芯片的一个喷嘴总成总体上用标号10指代。一个打印头具有多个在硅衬片16上以一个阵列14(图5和6)排列的喷嘴总成10。下面较详细地说明阵列14。
所述喷嘴总成10包括一个硅衬片或晶片16，其上沉积一个介电层18。一个CMOS钝化层20沉积在介电层18上。
每个喷嘴总成10包括一个确定一个喷嘴口24的喷嘴22、一个杠杆臂26形式的连接构件和一个致动器28。杠杆臂26把致动器28连接到喷嘴22。
如图2至4中较详细地所示，喷嘴22包含一个冠部30，所述冠部30带有从该冠部30垂下的裙部32。所述裙部32形成喷嘴腔34的周壁的一部分(图2至4)。喷嘴口24与喷嘴腔34流体连通。应当注意到喷嘴口24由一个“别住(pin)”一个喷嘴腔34中的墨40的体部的半月形38的隆起边缘36围绕(图2)。
一个墨输入口孔隙42(图6中所示最清楚)确定于喷嘴腔34的底46中。孔隙42与穿过衬片16确定的墨输入槽路48流体连通。
一个壁部50限定孔隙42的边界并且从底部46向上伸。如以上所述，喷嘴22的裙部32确定喷嘴腔34的周壁的第一部分并且壁部50确定喷嘴腔34的周壁的第二部分。
壁50在其游离端具有向内指的唇部52，该唇部用作防止在位移喷嘴22时墨逸出的流体密封，如下面较详细的说明中所述。可以看出，由于墨40的粘滞性在唇部52与裙部32之间的小间隔尺度，向内指的唇部52和表面张力起到防止墨从喷嘴腔34逸出的密封作用。
致动器28是一种热弯致动器并且连接到一个从衬片16向上伸——或者更加具体地说从CMOS钝化层20向上伸——的锚着件54上。锚着件54安装在形成与致动器28电气连接的导电垫56上。
致动器28包含一个第一、主动梁58，所述第一、主动梁58安排在一个第二被动梁60的上方。两个梁58和60都是或者包括一种导电陶瓷材料，譬如氮化钛(TiN)。
两个梁58和60都具有锚着在锚着件54上的第一端部和连接到臂26的对置的部。当引起一个电流流经主动梁58时，梁58产生热膨胀。由于没有电流流过，被动梁60不以相同的速度膨胀，所以产生一个弯曲运动，引起臂26——从而引起喷嘴22向下向衬片16位移，如图3中所示。这引起经喷嘴口24喷墨，如在图3中的62处所示。从主动梁58取消热源，也就是停止电流时，喷嘴22返回其静态位置，如图4中所示。当喷嘴22返回其静态位置时，由于如图4中的66处所示一个小墨滴颈部断裂，结果形成一个小墨滴64。然后该墨小滴64转移到打印介质，譬如一张纸上。作为形成小墨滴64的结果，形成一个“负的”半月形，如图4中的68处所示。该“负的”半月形68导致一个进入喷嘴腔34中的墨流40，从而形成一个新的半月形38(图2)以准备下一次从喷嘴总成10喷射墨滴。
现在参见图5和图6详细地说明喷嘴阵列14。该阵列14用于一个四色打印头。因此，阵列114包括四个喷嘴总成组70，每组用于一个颜色。每个组70具有排列成两排(72和74)的喷嘴总成10。一个组70更详细地示于图6中。
为了方便排72和74中的喷嘴总成10的紧密封装，排74中的喷嘴总成10相对于排72中的喷嘴总成10偏移或者说错开。还有排72中的喷嘴总成10相互间隔开足够远，使得在排74中的喷嘴总成10的杠杆臂26能够在排72中的喷嘴总成10的相邻的喷嘴22之间通过。还要注意到每个喷嘴总成10基本上是做成哑铃形状的，从而使排72中的喷嘴22嵌套在排74中的相邻的喷嘴总成10的致动器28与喷嘴22之间。
而且，为了方便排72和74中的喷嘴22的紧密封装，每个喷嘴22基本上做成六边形形状。
本领域内普通技术人员可以看出，使用中，当向衬片66位移喷嘴22时，由于喷嘴口24相对喷嘴腔34稍成角度，墨稍微偏离垂直方向地喷射出。图5和6中所示的安排的一个优点是排74和72中的喷嘴总成10的致动器28沿同一个方向伸到排74和72的一侧。因此从排72中的喷嘴22中喷射出的墨滴和从排74中的喷嘴22中喷射出的墨滴相互平行，结果提高了打印质量。
还有，如图5中所示，衬片16具有安排于其上的连接垫76，所述连接垫76经垫56提供对喷嘴总成10的致动器28的电气连接。这些电气连接经CMOS层(未示)形成。
参见图7，图中示出本发明的一个发展。对于以前的各图，除非另有说明，相同的标号指代相似的部分。
在此发展中，一个喷嘴防护装置80安装在阵列14的衬片16上。喷嘴防护装置80包括一个具有多个经之确定的通道84的平面罩盖构件82。通道84与阵列14的喷嘴总成10的喷嘴口24对准，从而，当墨从喷嘴口24之一喷出时，在到达打印介质前墨通过相关联的通道84。
通过一个枝或者说支柱86形式的支承构件把平面罩盖构件82以相对于喷嘴总成10间隔开的关系安装。支柱86之一具有确定于其中的空气入口88。
罩盖构件82和支柱86是晶片衬片的。从而通道84用在罩盖构件82上进行的适当的蚀刻工艺形成。所述罩盖构件82具有不超过约300微米的厚度。这加速蚀刻工艺。从而通过减少蚀刻时间而降低制造成本。
在使用中，当操作阵列14时，经空气入口88充以空气以能够与墨一起进入通到84中，一起穿过通道84移动。
当以与墨滴64的速度不同的速度经通道84充以空气时，墨没有吸入进空气中。例如，以约3m/s的速度从喷嘴22喷射墨滴64。以约1m/s的速度经通道84充空气。
空气的用途是保持通道84没有异物颗粒。存在诸如尘土颗粒之类的异物颗粒会落在喷嘴总成10上不利地影响其操作。通过在喷嘴防护装置80中设置空气入口88在一个大的程度上避免了此问题。
下面参见图8至10，说明制造喷嘴总成10的一种工艺。
从硅衬片或晶片16开始，在晶片16的一个表面上沉积一个介电层18，所述介电层18是大约1.5微米的CVD氧化物的形式。在层18上旋涂阻蚀剂，并且把层18暴露于掩模100并且接着显影。
在显影以后，把层18向下等离子蚀刻到硅层16。然后剥去阻蚀剂并且清洁层18。此步骤确定墨输入口孔隙42。
在图8b中，在层18上沉积一约0.8微米厚的铝层102。在铝层102上旋涂阻蚀剂，并且把铝层102暴露于掩模104并且显影。把铝层102向下等离子蚀刻到介电层18，剥去阻蚀剂并且清洁所述装置。此步骤提供连接垫和对喷墨致动器28的相互连接。此相互连接是对一个NMOS驱动晶体管和一个带有制造在CMOS层(未示)中的连接的电源层的。
沉积约0.5微米的PECVD氮化物作为CMOS钝化层20。旋涂阻蚀剂并且把层20暴露于掩模106然后显影。显影后把氮化物向下等离子蚀刻到铝层102和硅层16之入口孔隙42区域处剥去阻蚀剂并且清洁所述装置。
在层20上旋涂牺牲材料层108。层108是6微米的光敏聚酰亚胺或者约4微米的高温阻蚀剂。把层108软烘烤(softbake)并且然后暴露于掩模110，此后把它显影。然后，当层108包含光敏聚酰亚胺时把层108在400℃下硬烘烤(hardbake)一个小时，或者在层108是高温阻蚀剂的情况下在高于300℃的温度下硬烘烤。应当注意在附图中，在掩模110的设计中考虑进了由于收缩引起的聚酰亚胺层108的图样依从性畸变(pattern-dependent distortion)。
下一个步骤中，示于图8e中，施加一个第二牺牲层112。层112或者是一个旋涂的2微米光敏聚酰亚胺，或者是约1.3微米的高温阻蚀剂。把层112软烘烤并且暴露于掩模114。在暴露于掩模114后把层112显影。在层112是光敏聚酰亚胺的情况下，把层112在400℃下硬烘烤约一个小时。当层112是阻蚀剂时在高于300℃的温度下硬烘烤约一个小时。
然后沉积一个0.2微米的多层金属层116。此层116的一部分形成致动器28的被动梁60。
层116通过在约300℃喷涂1000埃的氮化钛(TiN)接着喷涂50埃的氮化钽(TaN)而形成。再喷涂上另一个1000埃的TiN，接着喷涂50埃氮化钽TaN，并且又喷涂一个1000埃的TiN。
可以用于代替TiN的其它材料为TiB2、MoSi2或者(Ti，Al)N。
然后把层116暴露于掩模118，显影并且向下等离子蚀刻到层112，此后湿剥为层116施加的阻蚀剂，小心不要去掉硬化了的层108或者112。
通过旋涂上4微米光敏聚酰亚胺或者是约2.6微米的高温阻蚀剂而施加一个第三牺牲层120。把层120软烘烤，此后暴露于掩模122。然后把暴露了的层120显影，接着硬烘烤。在层120是光敏聚酰亚胺的情况下，把层120在400℃下硬烘烤约一个小时，或者在层112包括阻蚀剂时在高于300℃的温度下硬烘烤。
然后向层120施加一个第二多层金属层124。层124的构成与层116的构成相同并且用相同的方式施加。可以看出，两个层116和124都是导电的层。
把层124暴露于掩模126并且然后显影。把层124向下等离子蚀刻到聚酰亚胺或者阻蚀剂层120，此后湿剥为层124施加的阻蚀剂，小心不要去掉硬化了的层108、112或者120。应当指出的是层124的余留部分确定致动器28的主动梁58。
通过旋涂上4微米光敏聚酰亚胺或者是约2.6微米的高温阻蚀剂施加一个第四牺牲层128。把层128软烘烤、暴露于掩模130，然后显影以留下图9k中所示岛部。把层128的余留部分硬烘烤，是光敏聚酰亚胺的情况下于400℃下硬烘烤一个小时，对于阻蚀剂的情况在高于300℃的温度下硬烘烤。
如图8l中所示，沉积一个高杨氏模数介电层132。层132由约1微米氮化硅或者氧化铝构成。层132在低于牺牲层108、112、120、120、128的硬烘烤温度的温度下沉积。对于该介电层132所要求的主要特性是高弹性模数、化学惰性和对TiN的良好粘附性。
通过旋涂上2微米光敏聚酰亚胺或者是约1.3微米的高温阻蚀剂施加一个第五牺牲层134。把层134软烘烤，暴露于掩模136并且显影。把层134的余留部分硬烘烤，是光敏聚酰亚胺的情况下于400℃下一个小时，对于阻蚀剂的情况在高于300℃的温度下硬烘烤。
把介电层132向下等离子蚀刻到牺牲层128，小心不要去掉任何牺牲层134。
该步骤确定喷嘴总成10的喷嘴口24、杠杆臂26和锚着件54。
沉积一个高杨氏模数的介电层138。所述层138通过在低于牺牲层108、112、120和128的硬烘烤温度的温度下沉积约0.2微米的氮化硅或者氮化铝而形成。
然后，如图8p中所示把层138非均匀地向下等离子蚀刻到一个0.35微米的深度。此蚀刻旨在从除介电层132和牺牲层134的侧壁以外的所有表面清除介电质。该步骤产生所述的“别住(pin)”墨的半月形的围绕喷嘴口24的喷嘴框缘36。
施加一个紫外线(UV)分离带(ultraviolet release tape)140。在硅晶片16的后部旋涂上0.4微米阻蚀剂。把晶片16暴露于掩模142以反向蚀刻晶片16以确定墨输入槽路48。然后从晶片16剥去阻蚀剂。
把另一个紫外线(UV)分离带(未示)施加到晶片16的后部并且去除带140。在氧等离子体中剥去牺牲层108、112、120、128和134，以提供如图8r和9r中所示的最终的喷嘴总成10。为了便于参照，这两个图中的所示标号与图1中的标号相同以指代喷嘴总成10的相关部分。图11和12示出根据上面参照图8和图9说明的工艺制造的喷嘴总成10的运转，并且这些图与图2至4对应。
本领域内普通技术人员可以看出可以对特定实施方式中所示的本发明进行改变和/或修改而不偏离所清楚表述的本发明的精神和范畴。因此本发明的具体实施方式应当认为是示例性的而不是限制性的。

Claims (3)

1.一种喷墨打印头，其包括：
至少一个打印头芯片，所述打印头芯片包括：
一个晶片衬片；
多个位于所述晶片衬片上的喷嘴装置，每个喷嘴装置具有喷嘴腔壁和一个顶壁，所述喷嘴腔壁和顶壁确定一个喷嘴腔和一个与所述的喷嘴腔流体连通的喷嘴口；和
一个致动器，所述致动器工作地相对于每个喷嘴设置，以按需要经所述喷嘴口从所述喷嘴腔喷墨；和
一个置于所述打印头芯片上方的喷嘴防护装置，所述喷嘴防护装置包括：
一个从所述打印头芯片伸出的支承结构；和
一个置于所述支承结构上的平面罩盖构件，所述平面罩盖构件确定多个通道，每个通道与一个相应的喷嘴口对准，所述平面罩盖构件的厚度小于约300微米。
2.如权利要求1所述的喷墨打印头，其中，所述喷嘴防护装置的支承结构确定多个孔，所述孔允许空气进入所述打印头芯片与所述罩盖构件之间区域，从而空气可以穿过所述通道。
3.如权利要求1所述的喷墨打印头，其中，所述支承结构和所述罩盖构件由一晶片衬片确定。
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CN103895352A (zh) * 2012-12-27 2014-07-02 精工电子打印科技有限公司 液体喷射头以及液体喷射装置
CN103895352B (zh) * 2012-12-27 2017-04-12 精工电子打印科技有限公司 液体喷射头以及液体喷射装置

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US20020184764A1 (en) 2002-12-12
EP1513687A4 (en) 2007-04-11
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US6557970B2 (en) 2003-05-06
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AU2002368028B2 (en) 2005-08-25
CN100352654C (zh) 2007-12-05
US20060187243A1 (en) 2006-08-24
KR20050006250A (ko) 2005-01-15
AU2002368028A1 (en) 2003-12-31
US20080094450A1 (en) 2008-04-24
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IL164834A0 (en) 2005-12-18
EP1513687B1 (en) 2008-02-27
US7328967B2 (en) 2008-02-12
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