CN1695225A - 从单晶体表面清除非晶体氧化物 - Google Patents

从单晶体表面清除非晶体氧化物 Download PDF

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CN1695225A
CN1695225A CNA028225759A CN02822575A CN1695225A CN 1695225 A CN1695225 A CN 1695225A CN A028225759 A CNA028225759 A CN A028225759A CN 02822575 A CN02822575 A CN 02822575A CN 1695225 A CN1695225 A CN 1695225A
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substrate
oxide
alkaline earth
earth metal
amorphous oxide
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小约翰·L·爱德华兹
魏毅
德克·C·乔丹
胡晓明
詹姆斯·布拉德利·卡拉格
拉文卓纳斯·朱帕德
于志亦
亚历山大·A·德莫科夫
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NXP USA Inc
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Freescale Semiconductor Inc
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Abstract

提供了从单晶体衬底(22)的表面清除非晶体氧化物(24)的方法。该方法包含将钝化材料(26)沉积在非晶体氧化物之上。然后将单晶体衬底加热，使得非晶体氧化物层分解成至少一种从该表面释放出来的易失性物质。

Description

从单晶体表面清除非晶体氧化物
技术领域
本发明一般性地涉及准备用于在其上沉积单晶体氧化物的单晶体表面的方法，尤其涉及从单晶体表面清除非晶体氧化物的方法。
背景技术
例如像钙钛矿这样的单晶体氧化物，由于它们简单的晶体结构和独特的铁电特性、电介质特性和光学特性，使它们成为非常吸引人的材料。在诸如硅的单晶体衬底上单晶体氧化物的高质量外延生长对于许多器件应用，例如光学波导、铁电器件、非易失高密度存储器件、MOS器件及类似器件是期望得到的。
多年来，因为在置于充满氧气的环境的衬底表面上易形成非晶体氧化层，因此在单晶体衬底上生长出单晶体氧化物的尝试已经被证明是很难的事情。这种非晶体氧化层妨碍了单晶体衬底上单晶体氧化物的高质量生长。因为需要规则和稳定的衬底表面来帮助高质量单晶体氧化层的生长，因此在沉积单晶体氧化物层之前，希望清除衬底表面的非晶体氧化层。
因此，需要一种从单晶体衬底清除非晶体氧化层的方法。此外，需要一种在单晶体衬底上形成规则和稳定的表面以利于后面单晶体氧化层的生长的方法。
附图说明
在附图中，本发明将通过举例和非限定性的方式进行举例说明，其中类似附图标记表示类似的单元，其中：
图1举例说明的是具有单晶体衬底和其上自然形成的非晶体氧化物的半导体结构的横截面图；
图2举例说明的是在图1的半导体结构的原生非晶体氧化层上形成的钝化材料层的横截面图；
图3举例说明的是图2的其中已经在原生非晶体氧化层中形成空隙的半导体结构的横截面图；
图4举例说明的是图3的半导体结构的横截面图，其中钝化层的材料已经钝化了单晶体衬底的暴露部分；
图5举例说明的是图4的半导体结构的横截面图，其中已经清除了原生非晶体氧化层，并且已经由钝化层钝化了单晶体衬底；
图6举例说明的是图5的半导体结构的横截面图，其中在单晶体衬底之上已经生长单晶体氧化物。
本领域的技术人员会理解，为了简洁和清楚起见，对图中的元件进行的举例说明没有必要按照原来尺寸比例画出。例如，为了利于增进对本发明实施例的理解，图中某些元件的尺寸也许相对于其它元件的尺寸进行了夸大性描述。
具体实施方式
从单晶体衬底清除非晶体氧化物和在该衬底上产生规则的表面以利于后来单晶体氧化物生长的方法在图1至图6中进行了举例说明。图1示意性地举例说明了包含具有非晶体氧化层24的单晶体衬底22的半导体结构20一部分的横截面图。在这个上下文中，术语“单晶体”将具有半导体工业通常所使用的意思。该术语是指单晶或基本上单晶的材料，它应包含那些具有相对较少缺陷的材料，所述缺陷例如是在硅或锗，或硅和锗的混合物的衬底上通常发现的错位和类似缺陷，该材料还应包含半导体工业中通常见到的材料的外延层。
根据本发明的实施例，衬底22是单晶体半导体或化合物半导体材料，例如周期表的IV族中的材料。IV族半导体材料的例子包含硅、锗、硅和锗的混合物、硅和碳的混合物、硅、锗和碳的混合物、以及类似的物质。衬底22较适宜是含有硅或锗的晶片，最好是正如在半导体工业中使用的具有(100)取向的高质量单晶硅晶片。该衬底取向在轴上，或至多大约偏离轴6°。
半导体衬底22的至少一部分具有裸露的表面，尽管该衬底的其它部分也许还包含着其它的结构。在本文中术语“裸露”意味着该衬底部分的表面已经经过了清洁以清除任何氧化物、污染物或其它异质材料。众所周知，例如硅这样的裸露衬底可能很容易起反应并且可能很容易形成原生非晶体氧化物层24。术语“裸露”试图还包含这样的原生氧化物层。薄氧化物也可以有意生长在半导体衬底上，尽管这样生长的氧化物不是本发明的处理过程所必需的。为了在单晶体衬底上外延生长单晶体氧化物层，必须首先清除原生非晶体氧化物层24以暴露出下部衬底的晶体结构。
尽管本发明也可使用其它的外延处理过程，然而最好使用超高真空(UHV)分子束外延附生(MBE)技术进行下面的处理过程。在本发明的一个示例性实施例中，单晶体衬底22被放置在UHV MBE的处理室内。因此单晶体衬底22可以被加热到低于非晶体氧化物层24的升华温度的温度，最好加热至大约500℃的温度，尽管可以理解，在处理过程中单晶体衬底22被加热到这样的温度不是本发明所必需的。参照图2，钝化材料层26通过MBE方法被沉积在非晶体氧化物层24上。钝化材料层26可以包括碱或碱土金属、碱和/或碱土金属化合物、碱或碱土金属的氧化物、或碱和/或碱土金属氧化物的混合物。适宜作为钝化材料层26的材料的例子包含锶、氧化锶、钡、氧化钡，锶和钡的化合物以及类似的物质。通过打开MBE设备的闸门以使一个或多个钝化材料源暴露出来，启动MBE处理过程，从而使钝化材料熔化(flux)。钝化材料的熔化可以依据钝化材料的熔点和气压进行设置。通常，钝化材料的熔化在大约1埃/分钟至大约10埃/分钟的范围内。在本发明的优选实施例中，当钝化材料层26已经生长到期望的厚度时，就可以终止钝化材料的熔化。可选地，在处理期间，可以提供钝化材料的连续熔化。如果在处理期间提供钝化材料的连续熔化，可能希望提供钝化材料层26的厚度的现场监视，例如通过反射高能电子衍射(RHEED)晶体振荡厚度监视器，使得钝化材料层26的厚度达不到妨碍或不利影响非晶体氧化物层24的清除的厚度。最好是钝化材料层26的大约1至5个单层，更好的是钝化材料层26的大约1至2个单层被沉积在非晶体氧化层24上，尽管能够理解，钝化材料层26可以是适宜促进清除非晶体氧化物层24的任何厚度。
于是该衬底被加热到大约700℃至大约900℃的范围内的温度。图3举例说明的是被加热到大约700℃或更高温度时结构20的横截面图。在这种温度下，非晶体氧化物24的分子从单晶体衬底22的表面中释放出来，在非晶体氧化物层24中形成空隙28。在非晶体氧化物层24上的钝化材料层26促进了非晶体氧化物层从单晶体衬底22表面的释放，因此增加了非晶体氧化物层的清除速度。钝化材料作为催化剂，促使电子从钝化材料和非晶体氧化物中排出。这产生了钝化材料和非晶体氧化物之间的偶极子场，其使得非晶体氧化物处于活化状态。因此，非晶体氧化物更容易地分解成从单晶体衬底表面释放出来的易失性物质。此外，在空隙28的形成过程期间暴露的单晶体衬底22的部分被钝化材料层26的钝化材料钝化，如图4所例举的那样。如果没有来自钝化材料层26的钝化材料，空隙将继续长入单晶体衬底22，从而在单晶体衬底22中形成凹坑。随着处理的进行，非晶体氧化物层24继续从单晶体衬底22的表面释放，该表面则继续被钝化材料层26的钝化材料钝化。图5举例说明的是经过上述的处理过程得到的结构30的横截面图。处理过程结束时，所有的非晶体氧化层24基本上从单晶体衬底22释放出来，并且钝化材料层26在单晶体衬底22上提供规则和稳定的表面。
在从该衬底表面清除非晶体氧化物24之后，可以将该衬底冷却到大约200-800℃范围内的温度，最好冷却到350-450℃范围内的温度，并且正如图6举例说明的那样，单晶体氧化物层42可以在钝化材料层26上进行外延生长以形成结构40。单晶体氧化物层42最好选择成与下面的单晶体衬底22晶体兼容。适宜用于单晶体氧化物42的材料包含例如碱土金属钛酸盐、碱土金属锆酸盐、碱土金属铪酸盐、碱土金属钽酸盐、碱土金属钌酸盐、碱土金属铌酸盐、碱土金属钒酸盐、碱土金属锡基钙钛矿、镧铝酸盐、镧钪氧化物、钆氧化物这样的金属氧化物。这些材料大部分是绝缘体，尽管例如锶钌酸盐(strontiumruthenate)这样的材料是导体。通常，这些材料是金属氧化物或金属氮化物，更特别的是这些金属氧化物或氮化物通常包含至少两种不同的金属元素。
结构40可以还包含非晶体界面层44，最好是在单晶体氧化物层42的生长期间或之后通过衬底22表面的氧化过程形成的氧化物。层44的厚度可以足以减轻由于单晶体衬底22和单晶体氧化物层42之间的晶格常数失配而引起的应力。通常，层44的厚度在大约0.5-5nm的范围间。
下面的例子根据本发明的一个实施例说明了制备如图6所述的半导体结构的过程。该过程从提供包括硅或锗的单晶体半导体衬底开始。根据本发明的优选实施例，该半导体衬底是具有(100)晶体取向的硅晶片。该衬底的取向在轴上，或至多与轴偏离大约6°。至少一部分硅衬底具有原生非晶体硅氧化物层。为了在单晶硅衬底上外延生长单晶体氧化物层，必须首先清除原生非晶体硅氧化物层以暴露下面的硅衬底的晶体结构。该处理过程最好在UHV MBE设备中进行，尽管本发明可以同样使用其它的外延处理过程。硅衬底被放置在UHV MBE单元的处理室内，并且被加热到低于硅氧化物的升华温度的温度，最好加热到大约500℃。接着MBE设备中的闸门打开以暴露出一个或多个锶源，从而产生最好在大约1埃/分钟至大约10埃/分钟的范围内的锶熔化，并且更好的是大约4埃/分钟。接着锶的一个至两个单层被沉积在原生非晶体氧化物层上。可选地，锶氧化物的三个至四个单层可以通过在氧分压处于大约1×10-8托至1×10-7托的范围内的环境中暴露一个或多个锶源而被沉积在硅衬底表面上。
然后硅衬底被加热到至少为720℃的温度。锶(或锶氧化物)作为增加从硅衬底表面清除硅氧化物的速度的催化剂。锶促使电子从锶层和氧化硅层之一或全部中排出。这就在锶层和氧化硅层之间产生了偶极子场。偶极子场减弱了氧化硅层的Si-O键合，使得氧化硅层处于活化状态。因此，硅氧化物根据下列反应式更容易地分解成从单晶硅衬底表面释放的易失性物质：
。
随着氧化硅从硅衬底表面中被释放出来，开始在原生的非晶体硅氧化物层中形成例如图3中举例说明的空隙28的空隙。如果没有硅氧化物层上的锶(或锶氧化物)，空隙会继续长入硅衬底中，从而在硅表面产生凹陷。然而，锶用于钝化所暴露的硅衬底表面，使得减少甚至消除硅衬底的进一步刻蚀。因此，就导致了具有规则的2×1结构的锶终结的硅(100)衬底。如果在这个处理阶段没有获得规则的(2×1)结构，可以将该结构暴露给额外的锶，直至获得规则的(2×1)结构。如果氧化锶用于钝化硅衬底表面，可以继续该过程，使得锶氧化物与硅衬底进行反应以形成易失性的SiO，从而留下锶终结的硅衬底。这个锶层形成用于随后的规则氧化物层的生长的模板。
根据本发明的一个实施例，在从硅衬底表面清除非晶体硅氧化物之后，该衬底被冷却到大约200至800℃范围内的温度，最好在350至450℃范围内，并且钛酸锶单晶体氧化物层通过MBE技术生长在模板层上。通过打开MBE设备的闸门以暴露锶、钛和氧源来启动MBE处理过程。锶与钛的比值近似为1∶1。氧分压起初设置在最小值，以每分钟大约0.1-0.8nm的生长速度生长化学计量的钛酸锶，最好大约为每分钟0.3-0.5nm。在启动钛酸锶的生长后，氧分压被增加到最初的最小值之上。钛酸锶的化学计量能够在生长期间通过监视RHEED模式并调整熔化来控制。氧的过压引起在下面的衬底和钛酸锶层之间的界面上非晶体硅氧化物层的生长。这个步骤可在SrTiO3层的生长期间或之后发生。硅氧化物界面层的生长是由于氧通过钛酸锶层扩散到界面而造成的，在界面中，氧与下面的衬底的表面上的硅进行反应。钛酸锶生长为具有相对下面的硅衬底被旋转45°的(100)晶体取向的规则(100)单晶体。在非晶体硅氧化物界面层中减轻了否则会因为硅衬底和生长晶体之间的较小晶格常数失配而在钛酸锶层中产生的应力。
上述的方法举例说明的是这样一种方法，其用于通过分子束外延附生处理从硅衬底清除非晶体硅氧化物，并形成包含硅衬底和包括钛酸锶的上部单晶体氧化物层的半导体结构。也可以通过化学气相沉积法(CVD)、金属有机化学气相沉积法(MOCVD)、迁移增强型外延附生法(MEE)、原子层外延附生法(ALE)、物理气相沉积法(PVD)、化学溶剂沉积法(CSD)、脉冲激光沉积法(PLD)或类似的方法进行该过程。而且，通过类似的过程，可以从例如锗、硅和锗的混合物、硅和碳的混合物、锗和碳的混合物、硅锗和碳的混合物以及类似物的其它单晶体衬底中清除原生的非晶体氧化物。此外，通过类似的过程，也能够生长出例如碱土金属钛酸盐、锆酸盐、铪酸盐、钽酸盐、钒酸盐、钌酸盐和铌酸盐，碱土金属锡基钙钛矿、铝酸镧、镧钪氧化物和钆氧化物的其它单晶体氧化物层。
在前述的详细说明中，本发明已经参照特殊的实施例进行了描述。不过，本领域的普通技术人员明白，在不背离本发明下面的权利要求书中提出的范围的前提下，可以进行各种各样的修正和变化。因此，详细说明书和附图被认为是举例说明性的而不是限制性的，所有这样的修正试图包含在本发明的范围之内。
前面已经针对具体实施例描述了本发明的益处、其它优点和问题解决方案。然而，上述益处、优点、问题解决方案和目的是使任何益处、优点或解决方案付诸实现和易于理解的任何要素，均不得被解释成任何或所有权利要求的关键、必需或必要特征或要素。这里，术语″包括″或其任何其他表达方式均被用来覆盖非排它性的内含，使得包括一系列要素的过程、方法、项目或装置不仅仅包含那些要素，而是可以包含其它没有明确列出或所述过程、方法、项目或装置所固有的要素。

Claims (15)

1.一种从单晶体衬底的表面清除非晶体氧化物的方法，该方法包括：
将钝化材料沉积在所述非晶体氧化物之上；以及
将所述表面加热，使得所述非晶体氧化物层分解成至少一种从所述表面释放出来的易失性物质。
2.如权利要求1中所述的方法，其中所述加热步骤在所述沉积步骤之后进行。
3.如权利要求1中所述的方法，其中所述加热步骤在所述沉积步骤期间进行。
4.如权利要求1中所述的方法，进一步包括在所述单晶体衬底的所述表面上外延生长单晶体氧化物层的步骤。
5.如权利要求4中所述的方法，进一步包括在所述单晶体衬底之上和所述单晶体氧化物层之下形成非晶体氧化物界面的步骤。
6.如权利要求1中所述的方法，进一步包括在所述沉积步骤之前，加热所述单晶体衬底到低于所述非晶体氧化物层的升华温度的温度的步骤。
7.如权利要求1中所述的方法，其中所述单晶体衬底包括硅，锗，硅和锗的化合物，硅和碳的化合物，硅、锗和碳的化合物中的一种。
8.如权利要求1中所述的方法，其中所述钝化材料包括碱土金属、碱土金属氧化物、碱土金属、碱土金属氧化物中的至少一种。
9.如权利要求8中所述的方法，其中所述钝化材料包括锶和氧化锶中的一种。
10.如权利要求4中所述的方法，其中所述单晶体氧化物包括碱土金属钛酸盐、碱土金属锆酸盐、碱土金属铪酸盐、碱土金属钽酸盐、碱土金属钌酸盐、碱土金属铌酸盐、碱土金属钒酸盐、碱土金属锡基钙钛矿、铝酸镧、镧钪氧化物、氧化钆中的至少一种。
11.如权利要求1中所述的方法，其中所述加热步骤包括加热到从大约700℃至大约900℃的范围内的温度的步骤。
12.如权利要求1中所述的方法，进一步包括加热所述表面，使得所述钝化材料对所述单晶体衬底进行钝化并在其上形成规则层的步骤。
13.如权利要求1中所述的方法，其中通过超高真空分子束外延附生的处理进行所述沉积。
14.一种利用具有在其上形成的非晶体氧化物的单晶体衬底制备半导体结构的方法，该方法包括：
将钝化材料沉积在所述衬底和所述非晶体氧化物之上；
加热所述单晶体衬底，使得所述非晶体氧化物层分解成至少一种从所述单晶体衬底中释放出来的易失性物质；以及
将单晶体氧化物沉积在所述单晶体衬底上。
15.一种从单晶体衬底清除非晶体氧化物的方法，该方法包括：
将钝化材料沉积在所述单晶体表面上；以及
加热所述单晶体衬底，
其中所述钝化材料促使电子从钝化材料和非晶体氧化物中的至少一种中排出，所述电子的排出在所述钝化材料和非晶体氧化物之间产生偶极子场，从而促进非晶体氧化物分解成易失性物质，并通过钝化材料产生单晶体衬底的钝化。
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003142479A (ja) * 2001-11-02 2003-05-16 Fujitsu Ltd 半導体装置、エピタキシャル膜の製造方法、およびレーザアブレーション装置
US7230214B2 (en) * 2004-03-03 2007-06-12 Tutco, Inc. Metal sheathed heater using splice connection assembly with heat shrinkable tubing, and method of use
KR102065330B1 (ko) 2009-10-16 2020-01-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치의 제작 방법
KR101377170B1 (ko) * 2013-02-13 2014-03-27 포항공과대학교 산학협력단 실리콘 산화물층의 제거방법과 적층체
JP6346124B2 (ja) * 2015-06-02 2018-06-20 東芝メモリ株式会社 半導体装置の製造方法

Family Cites Families (537)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3617951A (en) * 1968-11-21 1971-11-02 Western Microwave Lab Inc Broadband circulator or isolator of the strip line or microstrip type
US3670213A (en) 1969-05-24 1972-06-13 Tokyo Shibaura Electric Co Semiconductor photosensitive device with a rare earth oxide compound forming a rectifying junction
US4404265A (en) 1969-10-01 1983-09-13 Rockwell International Corporation Epitaxial composite and method of making
GB1319311A (en) 1970-06-04 1973-06-06 North American Rockwell Epitaxial composite and method of making
US3766370A (en) 1971-05-14 1973-10-16 Hewlett Packard Co Elementary floating point cordic function processor and shifter
US3802967A (en) 1971-08-27 1974-04-09 Rca Corp Iii-v compound on insulating substrate and its preparation and use
US3914137A (en) 1971-10-06 1975-10-21 Motorola Inc Method of manufacturing a light coupled monolithic circuit by selective epitaxial deposition
US4006989A (en) 1972-10-02 1977-02-08 Raytheon Company Laser gyroscope
US3935031A (en) 1973-05-07 1976-01-27 New England Institute, Inc. Photovoltaic cell with enhanced power output
US4084130A (en) 1974-01-18 1978-04-11 Texas Instruments Incorporated Laser for integrated optical circuits
US4120588A (en) 1976-07-12 1978-10-17 Erik Chaum Multiple path configuration for a laser interferometer
NL7710164A (nl) * 1977-09-16 1979-03-20 Philips Nv Werkwijze ter behandeling van een eenkristal- lijn lichaam.
US4174422A (en) 1977-12-30 1979-11-13 International Business Machines Corporation Growing epitaxial films when the misfit between film and substrate is large
US4284329A (en) 1978-01-03 1981-08-18 Raytheon Company Laser gyroscope system
US4146297A (en) 1978-01-16 1979-03-27 Bell Telephone Laboratories, Incorporated Tunable optical waveguide directional coupler filter
US4242595A (en) 1978-07-27 1980-12-30 University Of Southern California Tunnel diode load for ultra-fast low power switching circuits
US4297656A (en) 1979-03-23 1981-10-27 Harris Corporation Plural frequency oscillator employing multiple fiber-optic delay line
US4424589A (en) 1980-04-11 1984-01-03 Coulter Systems Corporation Flat bed scanner system and method
US4452720A (en) 1980-06-04 1984-06-05 Teijin Limited Fluorescent composition having the ability to change wavelengths of light, shaped article of said composition as a light wavelength converting element and device for converting optical energy to electrical energy using said element
US4289920A (en) 1980-06-23 1981-09-15 International Business Machines Corporation Multiple bandgap solar cell on transparent substrate
EP0051488B1 (en) 1980-11-06 1985-01-30 Kabushiki Kaisha Toshiba Method for manufacturing a semiconductor device
US4442590A (en) 1980-11-17 1984-04-17 Ball Corporation Monolithic microwave integrated circuit with integral array antenna
US4392297A (en) 1980-11-20 1983-07-12 Spire Corporation Process of making thin film high efficiency solar cells
JPS57177583A (en) 1981-04-14 1982-11-01 Int Standard Electric Corp Holl effect device
JPS57176785A (en) 1981-04-22 1982-10-30 Hitachi Ltd Semiconductor laser device
GB2115996B (en) 1981-11-02 1985-03-20 Kramer Kane N Portable data processing and storage system
US4439014A (en) 1981-11-13 1984-03-27 Mcdonnell Douglas Corporation Low voltage electro-optic modulator
US4482422A (en) 1982-02-26 1984-11-13 Rca Corporation Method for growing a low defect monocrystalline layer on a mask
JPS58158944A (ja) 1982-03-16 1983-09-21 Futaba Corp 半導体装置
US4484332A (en) 1982-06-02 1984-11-20 The United States Of America As Represented By The Secretary Of The Air Force Multiple double heterojunction buried laser device
US4482906A (en) 1982-06-30 1984-11-13 International Business Machines Corporation Gallium aluminum arsenide integrated circuit structure using germanium
US4594000A (en) 1983-04-04 1986-06-10 Ball Corporation Method and apparatus for optically measuring distance and velocity
US4756007A (en) 1984-03-08 1988-07-05 Codex Corporation Adaptive communication rate modem
US5268327A (en) * 1984-04-27 1993-12-07 Advanced Energy Fund Limited Partnership Epitaxial compositions
US4629821A (en) 1984-08-16 1986-12-16 Polaroid Corporation Photovoltaic cell
JPH069334B2 (ja) 1984-09-03 1994-02-02 株式会社東芝 光・電気集積化素子
US4773063A (en) 1984-11-13 1988-09-20 University Of Delaware Optical wavelength division multiplexing/demultiplexing system
US4661176A (en) 1985-02-27 1987-04-28 The United States Of America As Represented By The Secretary Of The Air Force Process for improving the quality of epitaxial silicon films grown on insulating substrates utilizing oxygen ion conductor substrates
US4748485A (en) 1985-03-21 1988-05-31 Hughes Aircraft Company Opposed dual-gate hybrid structure for three-dimensional integrated circuits
JPS61255074A (ja) 1985-05-08 1986-11-12 Mitsubishi Electric Corp 光電変換半導体装置
US4846926A (en) 1985-08-26 1989-07-11 Ford Aerospace & Communications Corporation HcCdTe epitaxially grown on crystalline support
CA1292550C (en) 1985-09-03 1991-11-26 Masayoshi Umeno Epitaxial gallium arsenide semiconductor wafer and method of producing the same
JPS6263828A (ja) 1985-09-06 1987-03-20 Yokogawa Electric Corp 振動式トランスジューサ
US4695120A (en) * 1985-09-26 1987-09-22 The United States Of America As Represented By The Secretary Of The Army Optic-coupled integrated circuits
US5140387A (en) * 1985-11-08 1992-08-18 Lockheed Missiles & Space Company, Inc. Semiconductor device in which gate region is precisely aligned with source and drain regions
JPS62119196A (ja) 1985-11-18 1987-05-30 Univ Nagoya 化合物半導体の成長方法
US4872046A (en) 1986-01-24 1989-10-03 University Of Illinois Heterojunction semiconductor device with <001> tilt
FR2595509B1 (fr) 1986-03-07 1988-05-13 Thomson Csf Composant en materiau semiconducteur epitaxie sur un substrat a parametre de maille different et application a divers composants en semiconducteurs
US4804866A (en) * 1986-03-24 1989-02-14 Matsushita Electric Works, Ltd. Solid state relay
US4777613A (en) 1986-04-01 1988-10-11 Motorola Inc. Floating point numeric data processor
US4901133A (en) 1986-04-02 1990-02-13 Texas Instruments Incorporated Multilayer semi-insulating film for hermetic wafer passivation and method for making same
US4774205A (en) 1986-06-13 1988-09-27 Massachusetts Institute Of Technology Monolithic integration of silicon and gallium arsenide devices
US4891091A (en) 1986-07-14 1990-01-02 Gte Laboratories Incorporated Method of epitaxially growing compound semiconductor materials
US4866489A (en) * 1986-07-22 1989-09-12 Matsushita Electric Industrial Co., Ltd. Semiconductor device
US4888202A (en) 1986-07-31 1989-12-19 Nippon Telegraph And Telephone Corporation Method of manufacturing thin compound oxide film and apparatus for manufacturing thin oxide film
JP2516604B2 (ja) 1986-10-17 1996-07-24 キヤノン株式会社 相補性ｍｏｓ集積回路装置の製造方法
US5163118A (en) 1986-11-10 1992-11-10 The United States Of America As Represented By The Secretary Of The Air Force Lattice mismatched hetrostructure optical waveguide
US4772929A (en) 1987-01-09 1988-09-20 Sprague Electric Company Hall sensor with integrated pole pieces
US4876208A (en) 1987-01-30 1989-10-24 Yellowstone Diagnostics Corporation Diffraction immunoassay apparatus and method
US4868376A (en) 1987-05-15 1989-09-19 Smartcard International Inc. Intelligent portable interactive personal data system
US4815084A (en) 1987-05-20 1989-03-21 Spectra Diode Laboratories, Inc. Semiconductor laser with integrated optical elements
JPS63305529A (ja) * 1987-06-05 1988-12-13 Nippon Telegr & Teleph Corp <Ntt> 基板およびその製造方法
US4801184A (en) * 1987-06-15 1989-01-31 Eastman Kodak Company Integrated optical read/write head and apparatus incorporating same
US5511238A (en) 1987-06-26 1996-04-23 Texas Instruments Incorporated Monolithic microwave transmitter/receiver
DE3855246T2 (de) 1987-07-06 1996-12-05 Sumitomo Electric Industries Supraleitende dünne Schicht und Verfahren zu ihrer Herstellung
JPS6414949A (en) 1987-07-08 1989-01-19 Nec Corp Semiconductor device and manufacture of the same
US5661112A (en) 1987-07-24 1997-08-26 Hatta; Shinichiro Superconductor
JPH0766922B2 (ja) 1987-07-29 1995-07-19 株式会社村田製作所 半導体装置の製造方法
GB8718552D0 (en) 1987-08-05 1987-09-09 British Railways Board Track to train communications systems
US5081062A (en) 1987-08-27 1992-01-14 Prahalad Vasudev Monolithic integration of silicon on insulator and gallium arsenide semiconductor technologies
JPH0618290B2 (ja) 1987-09-25 1994-03-09 松下電器産業株式会社 マイクロ波発振器
JPH0695554B2 (ja) 1987-10-12 1994-11-24 工業技術院長 単結晶マグネシアスピネル膜の形成方法
US4885376A (en) 1987-10-13 1989-12-05 Iowa State University Research Foundation, Inc. New types of organometallic reagents and catalysts for asymmetric synthesis
US4802182A (en) 1987-11-05 1989-01-31 Xerox Corporation Monolithic two dimensional waveguide coupled cavity laser/modulator
US4981714A (en) 1987-12-14 1991-01-01 Sharp Kabushiki Kaisha Method of producing ferroelectric LiNb1-31 x Tax O3 0<x<1) thin film by activated evaporation
US5073981A (en) 1988-01-22 1991-12-17 At&T Bell Laboratories Optical communication by injection-locking to a signal which modulates an optical carrier
JPH01207920A (ja) 1988-02-16 1989-08-21 Oki Electric Ind Co Ltd ＩｎＰ半導体薄膜の製造方法
JP2691721B2 (ja) 1988-03-04 1997-12-17 富士通株式会社 半導体薄膜の製造方法
US4912087A (en) 1988-04-15 1990-03-27 Ford Motor Company Rapid thermal annealing of superconducting oxide precursor films on Si and SiO2 substrates
US5130269A (en) 1988-04-27 1992-07-14 Fujitsu Limited Hetero-epitaxially grown compound semiconductor substrate and a method of growing the same
US5063166A (en) 1988-04-29 1991-11-05 Sri International Method of forming a low dislocation density semiconductor device
JPH01289108A (ja) 1988-05-17 1989-11-21 Fujitsu Ltd ヘテロエピタキシャル成長方法
US5238869A (en) * 1988-07-25 1993-08-24 Texas Instruments Incorporated Method of forming an epitaxial layer on a heterointerface
US4910164A (en) 1988-07-27 1990-03-20 Texas Instruments Incorporated Method of making planarized heterostructures using selective epitaxial growth
US5221367A (en) 1988-08-03 1993-06-22 International Business Machines, Corp. Strained defect-free epitaxial mismatched heterostructures and method of fabrication
US4889402A (en) 1988-08-31 1989-12-26 American Telephone And Telegraph Company, At&T Bell Laboratories Electro-optic polarization modulation in multi-electrode waveguides
US4963949A (en) 1988-09-30 1990-10-16 The United States Of America As Represented Of The United States Department Of Energy Substrate structures for InP-based devices
US4952420A (en) 1988-10-12 1990-08-28 Advanced Dielectric Technologies, Inc. Vapor deposition patterning method
EP0365875B1 (en) 1988-10-28 1995-08-09 Texas Instruments Incorporated Capped anneal
US5286985A (en) 1988-11-04 1994-02-15 Texas Instruments Incorporated Interface circuit operable to perform level shifting between a first type of device and a second type of device
US5063081A (en) 1988-11-14 1991-11-05 I-Stat Corporation Method of manufacturing a plurality of uniform microfabricated sensing devices having an immobilized ligand receptor
US5087829A (en) * 1988-12-07 1992-02-11 Hitachi, Ltd. High speed clock distribution system
US4965649A (en) 1988-12-23 1990-10-23 Ford Aerospace Corporation Manufacture of monolithic infrared focal plane arrays
US5227196A (en) 1989-02-16 1993-07-13 Semiconductor Energy Laboratory Co., Ltd. Method of forming a carbon film on a substrate made of an oxide material
US5028563A (en) * 1989-02-24 1991-07-02 Laser Photonics, Inc. Method for making low tuning rate single mode PbTe/PbEuSeTe buried heterostructure tunable diode lasers and arrays
US4999842A (en) 1989-03-01 1991-03-12 At&T Bell Laboratories Quantum well vertical cavity laser
US4990974A (en) 1989-03-02 1991-02-05 Thunderbird Technologies, Inc. Fermi threshold field effect transistor
US5237233A (en) * 1989-03-03 1993-08-17 E. F. Johnson Company Optoelectronic active circuit element
JP2622604B2 (ja) * 1989-03-07 1997-06-18 日本電信電話株式会社 酸化物薄膜形成方法
GB2230395B (en) * 1989-03-15 1992-09-30 Matsushita Electric Works Ltd Semiconductor relay circuit
EP0417313B1 (en) 1989-03-20 1995-11-29 Idemitsu Kosan Company Limited Styrenic copolymer and production thereof
US4934777A (en) 1989-03-21 1990-06-19 Pco, Inc. Cascaded recirculating transmission line without bending loss limitations
US5198269A (en) 1989-04-24 1993-03-30 Battelle Memorial Institute Process for making sol-gel deposited ferroelectric thin films insensitive to their substrates
US5075743A (en) 1989-06-06 1991-12-24 Cornell Research Foundation, Inc. Quantum well optical device on silicon
US5143854A (en) 1989-06-07 1992-09-01 Affymax Technologies N.V. Large scale photolithographic solid phase synthesis of polypeptides and receptor binding screening thereof
US5067809A (en) 1989-06-09 1991-11-26 Oki Electric Industry Co., Ltd. Opto-semiconductor device and method of fabrication of the same
DE3923709A1 (de) 1989-07-18 1991-01-31 Standard Elektrik Lorenz Ag Optoelektronische anordnung
FR2650704B1 (fr) 1989-08-01 1994-05-06 Thomson Csf Procede de fabrication par epitaxie de couches monocristallines de materiaux a parametres de mailles differents
US5399898A (en) 1992-07-17 1995-03-21 Lsi Logic Corporation Multi-chip semiconductor arrangements using flip chip dies
US5504035A (en) 1989-08-28 1996-04-02 Lsi Logic Corporation Process for solder ball interconnecting a semiconductor device to a substrate using a noble metal foil embedded interposer substrate
US5055445A (en) 1989-09-25 1991-10-08 Litton Systems, Inc. Method of forming oxidic high Tc superconducting materials on substantially lattice matched monocrystalline substrates utilizing liquid phase epitaxy
US4959702A (en) 1989-10-05 1990-09-25 Motorola, Inc. Si-GaP-Si heterojunction bipolar transistor (HBT) on Si substrate
GB8922681D0 (en) 1989-10-09 1989-11-22 Secr Defence Oscillator
JPH03150218A (ja) 1989-11-07 1991-06-26 Sumitomo Electric Ind Ltd 超電導薄膜の作製方法
US5051790A (en) 1989-12-22 1991-09-24 David Sarnoff Research Center, Inc. Optoelectronic interconnections for integrated circuits
JPH088214B2 (ja) 1990-01-19 1996-01-29 三菱電機株式会社 半導体装置
US6362017B1 (en) 1990-02-28 2002-03-26 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound
US5310707A (en) 1990-03-28 1994-05-10 Superconductivity Research Laboratory International Substrate material for the preparation of oxide superconductors
FR2661040A1 (fr) 1990-04-13 1991-10-18 Thomson Csf Procede d'adaptation entre deux materiaux semiconducteurs cristallises, et dispositif semiconducteur.
US5173474A (en) 1990-04-18 1992-12-22 Xerox Corporation Silicon substrate having an epitaxial superconducting layer thereon and method of making same
US5358925A (en) 1990-04-18 1994-10-25 Board Of Trustees Of The Leland Stanford Junior University Silicon substrate having YSZ epitaxial barrier layer and an epitaxial superconducting layer
US5164359A (en) 1990-04-20 1992-11-17 Eaton Corporation Monolithic integrated circuit having compound semiconductor layer epitaxially grown on ceramic substrate
US5362972A (en) * 1990-04-20 1994-11-08 Hitachi, Ltd. Semiconductor device using whiskers
US5122852A (en) 1990-04-23 1992-06-16 Bell Communications Research, Inc. Grafted-crystal-film integrated optics and optoelectronic devices
US5132648A (en) 1990-06-08 1992-07-21 Rockwell International Corporation Large array MMIC feedthrough
US5018816A (en) 1990-06-11 1991-05-28 Amp Incorporated Optical delay switch and variable delay system
US5585288A (en) * 1990-07-16 1996-12-17 Raytheon Company Digital MMIC/analog MMIC structures and process
US5608046A (en) 1990-07-27 1997-03-04 Isis Pharmaceuticals, Inc. Conjugated 4'-desmethyl nucleoside analog compounds
GB2250751B (en) 1990-08-24 1995-04-12 Kawasaki Heavy Ind Ltd Process for the production of dielectric thin films
US5248631A (en) * 1990-08-24 1993-09-28 Minnesota Mining And Manufacturing Company Doping of iib-via semiconductors during molecular beam epitaxy using neutral free radicals
DE4027024A1 (de) 1990-08-27 1992-03-05 Standard Elektrik Lorenz Ag Faserkreisel
US5281834A (en) 1990-08-31 1994-01-25 Motorola, Inc. Non-silicon and silicon bonded structure and method of manufacture
US5442191A (en) 1990-09-05 1995-08-15 Yale University Isotopically enriched semiconductor devices
US5144409A (en) 1990-09-05 1992-09-01 Yale University Isotopically enriched semiconductor devices
US5127067A (en) 1990-09-10 1992-06-30 Westinghouse Electric Corp. Local area network with star topology and ring protocol
DE4029060C2 (de) 1990-09-13 1994-01-13 Forschungszentrum Juelich Gmbh Verfahren zur Herstellung von Bauteilen für elektronische, elektrooptische und optische Bauelemente
US5060031A (en) 1990-09-18 1991-10-22 Motorola, Inc Complementary heterojunction field effect transistor with an anisotype N+ ga-channel devices
US5119448A (en) 1990-09-21 1992-06-02 Tacan Corporation Modular micro-optical systems and method of making such systems
CA2052074A1 (en) 1990-10-29 1992-04-30 Victor Vali Integrated optics gyroscope sensor
US5880452A (en) 1990-11-15 1999-03-09 Geo Labs, Inc. Laser based PCMCIA data collection system with automatic triggering for portable applications and method of use
US5130762A (en) 1990-11-20 1992-07-14 Amp Incorporated Integrated quantum well feedback structure
US5418216A (en) 1990-11-30 1995-05-23 Fork; David K. Superconducting thin films on epitaxial magnesium oxide grown on silicon
US5216359A (en) * 1991-01-18 1993-06-01 University Of North Carolina Electro-optical method and apparatus for testing integrated circuits
US5480833A (en) 1991-02-19 1996-01-02 Fujitsu Limited Semiconductor device having an isolation region enriched in oxygen and a fabrication process thereof
US5273911A (en) 1991-03-07 1993-12-28 Mitsubishi Denki Kabushiki Kaisha Method of producing a thin-film solar cell
KR940005454B1 (ko) 1991-04-03 1994-06-18 삼성전자 주식회사 화합물반도체장치
US5225031A (en) 1991-04-10 1993-07-06 Martin Marietta Energy Systems, Inc. Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process
SE468267B (sv) 1991-04-10 1992-11-30 Ericsson Telefon Ab L M Terminal foer ett frekvensdelat, optiskt kommunikationssystem
US5482003A (en) 1991-04-10 1996-01-09 Martin Marietta Energy Systems, Inc. Process for depositing epitaxial alkaline earth oxide onto a substrate and structures prepared with the process
US5116461A (en) 1991-04-22 1992-05-26 Motorola, Inc. Method for fabricating an angled diffraction grating
US5221413A (en) 1991-04-24 1993-06-22 At&T Bell Laboratories Method for making low defect density semiconductor heterostructure and devices made thereby
US5523879A (en) * 1991-04-26 1996-06-04 Fuji Xerox Co., Ltd. Optical link amplifier and a wavelength multiplex laser oscillator
US5185589A (en) 1991-05-17 1993-02-09 Westinghouse Electric Corp. Microwave film bulk acoustic resonator and manifolded filter bank
US5194397A (en) 1991-06-05 1993-03-16 International Business Machines Corporation Method for controlling interfacial oxide at a polycrystalline/monocrystalline silicon interface
US5140651A (en) 1991-06-27 1992-08-18 The United States Of America As Represented By The Secretary Of The Air Force Semiconductive guided-wave programmable optical delay lines using electrooptic fabry-perot elements
US5312765A (en) 1991-06-28 1994-05-17 Hughes Aircraft Company Method of fabricating three dimensional gallium arsenide microelectronic device
EP0584410A1 (en) 1991-07-05 1994-03-02 Conductus, Inc. Superconducting electronic structures and methods of preparing same
US5453727A (en) 1991-07-16 1995-09-26 Asahi Kasai Kogyo Kabushiki Kaisha Semiconductor sensors and method for fabricating the same
JP3130575B2 (ja) 1991-07-25 2001-01-31 日本電気株式会社 マイクロ波ミリ波送受信モジュール
US5306649A (en) 1991-07-26 1994-04-26 Avantek, Inc. Method for producing a fully walled emitter-base structure in a bipolar transistor
EP0530972B1 (en) 1991-08-02 1997-11-05 Canon Kabushiki Kaisha Liquid crystal image display unit
US5357122A (en) 1991-09-05 1994-10-18 Sony Corporation Three-dimensional optical-electronic integrated circuit device with raised sections
DE69233314T2 (de) 1991-10-11 2005-03-24 Canon K.K. Verfahren zur Herstellung von Halbleiter-Produkten
US5173835A (en) 1991-10-15 1992-12-22 Motorola, Inc. Voltage variable capacitor
US5148504A (en) * 1991-10-16 1992-09-15 At&T Bell Laboratories Optical integrated circuit designed to operate by use of photons
DE4135076A1 (de) 1991-10-24 1993-04-29 Daimler Benz Ag Mehrschichtige, monokristallines siliziumkarbid enthaltende zusammensetzung
US5283462A (en) 1991-11-04 1994-02-01 Motorola, Inc. Integrated distributed inductive-capacitive network
US5404373A (en) * 1991-11-08 1995-04-04 University Of New Mexico Electro-optical device
US5208182A (en) 1991-11-12 1993-05-04 Kopin Corporation Dislocation density reduction in gallium arsenide on silicon heterostructures
US5216729A (en) 1991-11-18 1993-06-01 Harmonic Lightwaves, Inc. Active alignment system for laser to fiber coupling
US5397428A (en) * 1991-12-20 1995-03-14 The University Of North Carolina At Chapel Hill Nucleation enhancement for chemical vapor deposition of diamond
EP0548391B1 (de) 1991-12-21 1997-07-23 Deutsche ITT Industries GmbH Offsetkompensierter Hallsensor
JP3416163B2 (ja) 1992-01-31 2003-06-16 キヤノン株式会社 半導体基板及びその作製方法
JP3250673B2 (ja) 1992-01-31 2002-01-28 キヤノン株式会社 半導体素子基体とその作製方法
US5446719A (en) * 1992-02-05 1995-08-29 Sharp Kabushiki Kaisha Optical information reproducing apparatus
US5270298A (en) 1992-03-05 1993-12-14 Bell Communications Research, Inc. Cubic metal oxide thin film epitaxially grown on silicon
US5155658A (en) 1992-03-05 1992-10-13 Bell Communications Research, Inc. Crystallographically aligned ferroelectric films usable in memories and method of crystallographically aligning perovskite films
TW232079B (zh) * 1992-03-17 1994-10-11 Wisconsin Alumni Res Found
US5244818A (en) 1992-04-08 1993-09-14 Georgia Tech Research Corporation Processes for lift-off of thin film materials and for the fabrication of three dimensional integrated circuits
JP3379106B2 (ja) * 1992-04-23 2003-02-17 セイコーエプソン株式会社 液体噴射ヘッド
US5326721A (en) 1992-05-01 1994-07-05 Texas Instruments Incorporated Method of fabricating high-dielectric constant oxides on semiconductors using a GE buffer layer
EP0568064B1 (en) 1992-05-01 1999-07-14 Texas Instruments Incorporated Pb/Bi-containing high-dielectric constant oxides using a non-Pb/Bi-containing perovskite as a buffer layer
US5442561A (en) 1992-05-12 1995-08-15 Nippon Telegraph And Telephone Corporation Production management system and its application method
US5585167A (en) * 1992-05-18 1996-12-17 Matsushita Electric Industrial Co., Ltd. Thin-film conductor and method of fabricating the same
DE69332407T2 (de) 1992-06-17 2003-06-18 Harris Corp Herstellung von Halbleiteranordnungen auf SOI substraten
US5266355A (en) 1992-06-18 1993-11-30 Eastman Kodak Company Chemical vapor deposition of metal oxide films
US5572052A (en) 1992-07-24 1996-11-05 Mitsubishi Denki Kabushiki Kaisha Electronic device using zirconate titanate and barium titanate ferroelectrics in insulating layer
US5296721A (en) 1992-07-31 1994-03-22 Hughes Aircraft Company Strained interband resonant tunneling negative resistance diode
DE69230260T2 (de) 1992-08-07 2000-07-13 Asahi Chemical Ind Halbleiteranordnung auf nitridbasis und verfahren zu ihrer herstellung
US5262659A (en) * 1992-08-12 1993-11-16 United Technologies Corporation Nyquist frequency bandwidth hact memory
JPH0667046A (ja) * 1992-08-21 1994-03-11 Sharp Corp 光集積回路
US5438584A (en) 1992-09-22 1995-08-01 Xerox Corporation Dual polarization laser diode with quaternary material system
US5314547A (en) 1992-09-28 1994-05-24 General Motors Corporation Rare earth slab doping of group III-V compounds
JP3286921B2 (ja) 1992-10-09 2002-05-27 富士通株式会社 シリコン基板化合物半導体装置
US5356509A (en) 1992-10-16 1994-10-18 Astropower, Inc. Hetero-epitaxial growth of non-lattice matched semiconductors
US5514484A (en) 1992-11-05 1996-05-07 Fuji Xerox Co., Ltd. Oriented ferroelectric thin film
JPH06151872A (ja) 1992-11-09 1994-05-31 Mitsubishi Kasei Corp Ｆｅｔ素子
EP0600303B1 (en) 1992-12-01 2002-02-06 Matsushita Electric Industrial Co., Ltd. Method for fabrication of dielectric thin film
US5323023A (en) 1992-12-02 1994-06-21 Xerox Corporation Epitaxial magnesium oxide as a buffer layer on (111) tetrahedral semiconductors
US5248564A (en) 1992-12-09 1993-09-28 Bell Communications Research, Inc. C-axis perovskite thin films grown on silicon dioxide
US5347157A (en) 1992-12-17 1994-09-13 Eastman Kodak Company Multilayer structure having a (111)-oriented buffer layer
JPH06196648A (ja) 1992-12-25 1994-07-15 Fuji Xerox Co Ltd 配向性強誘電体薄膜素子
JPH06303137A (ja) 1992-12-29 1994-10-28 Hitachi Ltd Ｄ／ａ変換器、オフセット調整回路及びこれを用いた携帯通信端末装置
US5352926A (en) 1993-01-04 1994-10-04 Motorola, Inc. Flip chip package and method of making
EP0606821A1 (en) 1993-01-11 1994-07-20 International Business Machines Corporation Modulated strain heterostructure light emitting devices
JP3047656B2 (ja) 1993-01-12 2000-05-29 株式会社村田製作所 ＩｎＳｂ薄膜の製造方法
US5371734A (en) 1993-01-29 1994-12-06 Digital Ocean, Inc. Medium access control protocol for wireless network
AU6132494A (en) 1993-03-12 1994-09-26 Neocera, Inc. Superconducting films on alkaline earth fluoride substrates with multiple buffer layers
US5334556A (en) 1993-03-23 1994-08-02 Texas Instruments Incorporated Method for improving gate oxide integrity using low temperature oxidation during source/drain anneal
US5293050A (en) 1993-03-25 1994-03-08 International Business Machines Corporation Semiconductor quantum dot light emitting/detecting devices
US5452118A (en) 1993-04-20 1995-09-19 Spire Corporation Optical heterodyne receiver for fiber optic communications system
US5955591A (en) 1993-05-12 1999-09-21 Imbach; Jean-Louis Phosphotriester oligonucleotides, amidites and method of preparation
JPH06338630A (ja) 1993-05-28 1994-12-06 Omron Corp 半導体発光素子、並びに当該発光素子を用いた光学検知装置、光学的情報処理装置、光結合装置及び発光装置
US5456205A (en) 1993-06-01 1995-10-10 Midwest Research Institute System for monitoring the growth of crystalline films on stationary substrates
US5312790A (en) 1993-06-09 1994-05-17 The United States Of America As Represented By The Secretary Of The Army Ceramic ferroelectric material
JP3244205B2 (ja) 1993-06-17 2002-01-07 信越半導体株式会社 半導体装置
JPH0714853A (ja) 1993-06-18 1995-01-17 Fujitsu Ltd シリコン基板上の化合物半導体装置とその製造方法
US5444016A (en) 1993-06-25 1995-08-22 Abrokwah; Jonathan K. Method of making ohmic contacts to a complementary III-V semiconductor device
US5578162A (en) * 1993-06-25 1996-11-26 Lucent Technologies Inc. Integrated composite semiconductor devices and method for manufacture thereof
US5480829A (en) 1993-06-25 1996-01-02 Motorola, Inc. Method of making a III-V complementary heterostructure device with compatible non-gold ohmic contacts
US6048751A (en) 1993-06-25 2000-04-11 Lucent Technologies Inc. Process for manufacture of composite semiconductor devices
US5572040A (en) 1993-07-12 1996-11-05 Peregrine Semiconductor Corporation High-frequency wireless communication system on a single ultrathin silicon on sapphire chip
DE4323821A1 (de) * 1993-07-15 1995-01-19 Siemens Ag Pyrodetektorelement mit orientiert aufgewachsener pyroelektrischer Schicht und Verfahren zu seiner Herstellung
US5394489A (en) 1993-07-27 1995-02-28 At&T Corp. Wavelength division multiplexed optical communication transmitters
US6139483A (en) 1993-07-27 2000-10-31 Texas Instruments Incorporated Method of forming lateral resonant tunneling devices
US5693140A (en) * 1993-07-30 1997-12-02 Lockheed Martin Energy Systems, Inc. Process for growing a film epitaxially upon a MgO surface
US5450812A (en) 1993-07-30 1995-09-19 Martin Marietta Energy Systems, Inc. Process for growing a film epitaxially upon an oxide surface and structures formed with the process
US5682046A (en) 1993-08-12 1997-10-28 Fujitsu Limited Heterojunction bipolar semiconductor device and its manufacturing method
US5371621A (en) * 1993-08-23 1994-12-06 Unisys Corporation Self-routing multi-stage photonic interconnect
JPH07114746A (ja) * 1993-08-25 1995-05-02 Sony Corp 光学装置
JPH0766366A (ja) * 1993-08-26 1995-03-10 Hitachi Ltd 半導体積層構造体およびそれを用いた半導体装置
JP3333325B2 (ja) 1993-08-26 2002-10-15 株式会社東芝 半導体装置、半導体装置のシミュレーション方法、及び半導体装置のシミュレータ
US5792679A (en) 1993-08-30 1998-08-11 Sharp Microelectronics Technology, Inc. Method for forming silicon-germanium/Si/silicon dioxide heterostructure using germanium implant
US5753928A (en) 1993-09-30 1998-05-19 Siemens Components, Inc. Monolithic optical emitter-detector
EP1178530A2 (en) * 1993-09-30 2002-02-06 Kopin Corporation Three-dimensional processor using transferred thin film circuits
DE69431333T2 (de) 1993-10-08 2003-07-31 Mitsubishi Cable Ind Ltd GaN-Einkristall
JPH07115244A (ja) 1993-10-19 1995-05-02 Toyota Motor Corp 半導体レーザー及びその製造方法
JPH07133192A (ja) * 1993-11-04 1995-05-23 Sumitomo Electric Ind Ltd 成膜装置および成膜方法
US5650362A (en) 1993-11-04 1997-07-22 Fuji Xerox Co. Oriented conductive film and process for preparing the same
US5549977A (en) 1993-11-18 1996-08-27 Lucent Technologies Inc. Article comprising magnetoresistive material
BE1007865A3 (nl) 1993-12-10 1995-11-07 Philips Electronics Nv Tunnel schakelelement met verschillende blijvende schakeltoestanden.
BE1007902A3 (nl) 1993-12-23 1995-11-14 Philips Electronics Nv Schakelelement met geheugen voorzien van schottky tunnelbarriere.
JP3395318B2 (ja) 1994-01-07 2003-04-14 住友化学工業株式会社 ３−５族化合物半導体結晶の成長方法
US5576879A (en) 1994-01-14 1996-11-19 Fuji Xerox Co., Ltd. Composite optical modulator
US5623552A (en) 1994-01-21 1997-04-22 Cardguard International, Inc. Self-authenticating identification card with fingerprint identification
US5679152A (en) 1994-01-27 1997-10-21 Advanced Technology Materials, Inc. Method of making a single crystals Ga*N article
US5561305A (en) 1994-02-16 1996-10-01 The United States Of America As Represented By The Secretary Of The Army Method and apparatus for performing internal device structure analysis of a dual channel transistor by multiple-frequency Schubnikov-de Haas analysis
US5538941A (en) 1994-02-28 1996-07-23 University Of Maryland Superconductor/insulator metal oxide hetero structure for electric field tunable microwave device
GB2287327A (en) 1994-03-02 1995-09-13 Sharp Kk Electro-optic apparatus
JP3360105B2 (ja) 1994-03-04 2002-12-24 富士通株式会社 半導体装置の製造方法
JPH07253519A (ja) * 1994-03-16 1995-10-03 Fujitsu Ltd 光接続装置
US6469357B1 (en) 1994-03-23 2002-10-22 Agere Systems Guardian Corp. Article comprising an oxide layer on a GaAs or GaN-based semiconductor body
JP2985691B2 (ja) 1994-03-23 1999-12-06 株式会社デンソー 半導体装置
JP3015656B2 (ja) 1994-03-23 2000-03-06 株式会社東芝 半絶縁性ＧａＡｓ単結晶の製造方法および製造装置
US5962883A (en) 1994-03-23 1999-10-05 Lucent Technologies Inc. Article comprising an oxide layer on a GaAs-based semiconductor body
JP3330218B2 (ja) 1994-03-25 2002-09-30 三菱電機株式会社 半導体装置の製造方法，及び半導体装置
US5481102A (en) 1994-03-31 1996-01-02 Hazelrigg, Jr.; George A. Micromechanical/microelectromechanical identification devices and methods of fabrication and encoding thereof
US5478653A (en) 1994-04-04 1995-12-26 Guenzer; Charles S. Bismuth titanate as a template layer for growth of crystallographically oriented silicon
US5689123A (en) 1994-04-07 1997-11-18 Sdl, Inc. III-V aresenide-nitride semiconductor materials and devices
JP3293035B2 (ja) 1994-04-08 2002-06-17 株式会社ジャパンエナジー 窒化ガリウム系化合物半導体結晶の成長方法及び窒化ガリウム系化合物半導体装置
JP3771287B2 (ja) * 1994-04-15 2006-04-26 富士写真フイルム株式会社 導波路型電気光学素子
US5883564A (en) 1994-04-18 1999-03-16 General Motors Corporation Magnetic field sensor having high mobility thin indium antimonide active layer on thin aluminum indium antimonide buffer layer
US5528414A (en) 1994-05-05 1996-06-18 Lots Technology Two dimensional electro-optic modulator array
US5491461A (en) 1994-05-09 1996-02-13 General Motors Corporation Magnetic field sensor on elemental semiconductor substrate with electric field reduction means
US6064783A (en) * 1994-05-25 2000-05-16 Congdon; Philip A. Integrated laser and coupled waveguide
US5479033A (en) 1994-05-27 1995-12-26 Sandia Corporation Complementary junction heterostructure field-effect transistor
JP2643833B2 (ja) 1994-05-30 1997-08-20 日本電気株式会社 半導体記憶装置及びその製造方法
JP3460095B2 (ja) 1994-06-01 2003-10-27 富士通株式会社 強誘電体メモリ
US5436759A (en) 1994-06-14 1995-07-25 The Regents Of The University Of California Cross-talk free, low-noise optical amplifier
DE4421007A1 (de) 1994-06-18 1995-12-21 Philips Patentverwaltung Elektronisches Bauteil und Verfahren zu seiner Herstellung
JP2901493B2 (ja) 1994-06-27 1999-06-07 日本電気株式会社 半導体記憶装置及びその製造方法
US5589284A (en) 1994-08-01 1996-12-31 Texas Instruments Incorporated Electrodes comprising conductive perovskite-seed layers for perovskite dielectrics
US5838029A (en) 1994-08-22 1998-11-17 Rohm Co., Ltd. GaN-type light emitting device formed on a silicon substrate
US5828080A (en) 1994-08-17 1998-10-27 Tdk Corporation Oxide thin film, electronic device substrate and electronic device
JPH0864596A (ja) 1994-08-25 1996-03-08 Fujitsu Ltd 半導体装置及びその製造方法
JPH0864216A (ja) * 1994-08-25 1996-03-08 Tonen Corp 酸素イオン導電体薄膜及びその製造方法
US5559368A (en) * 1994-08-30 1996-09-24 The Regents Of The University Of California Dynamic threshold voltage mosfet having gate to body connection for ultra-low voltage operation
US5811839A (en) 1994-09-01 1998-09-22 Mitsubishi Chemical Corporation Semiconductor light-emitting devices
US5873977A (en) 1994-09-02 1999-02-23 Sharp Kabushiki Kaisha Dry etching of layer structure oxides
US5504183A (en) 1994-09-12 1996-04-02 Motorola Organometallic fluorescent complex polymers for light emitting applications
JPH0890832A (ja) 1994-09-27 1996-04-09 Oki Electric Ind Co Ltd 発光素子アレイおよび光学ヘッド
US5635741A (en) 1994-09-30 1997-06-03 Texas Instruments Incorporated Barium strontium titanate (BST) thin films by erbium donor doping
US5479317A (en) 1994-10-05 1995-12-26 Bell Communications Research, Inc. Ferroelectric capacitor heterostructure and method of making same
US5473047A (en) 1994-10-11 1995-12-05 Motorola, Inc. Soluble precursor to poly (cyanoterephthalydene) and method of preparation
US5778018A (en) 1994-10-13 1998-07-07 Nec Corporation VCSELs (vertical-cavity surface emitting lasers) and VCSEL-based devices
US5985356A (en) 1994-10-18 1999-11-16 The Regents Of The University Of California Combinatorial synthesis of novel materials
US5486406A (en) 1994-11-07 1996-01-23 Motorola Green-emitting organometallic complexes for use in light emitting devices
US5677551A (en) 1994-11-15 1997-10-14 Fujitsu Limited Semiconductor optical device and an optical processing system that uses such a semiconductor optical system
US5519235A (en) 1994-11-18 1996-05-21 Bell Communications Research, Inc. Polycrystalline ferroelectric capacitor heterostructure employing hybrid electrodes
JPH08148968A (ja) 1994-11-24 1996-06-07 Mitsubishi Electric Corp 薄膜圧電素子
KR0148596B1 (ko) 1994-11-28 1998-10-15 양승택 결정 입계 채널을 갖는 초전도 전계효과 소자와 그 제조방법
US5777350A (en) 1994-12-02 1998-07-07 Nichia Chemical Industries, Ltd. Nitride semiconductor light-emitting device
JP2679653B2 (ja) 1994-12-05 1997-11-19 日本電気株式会社 半導体装置
US5834362A (en) 1994-12-14 1998-11-10 Fujitsu Limited Method of making a device having a heteroepitaxial substrate
US5635453A (en) * 1994-12-23 1997-06-03 Neocera, Inc. Superconducting thin film system using a garnet substrate
US5772758A (en) * 1994-12-29 1998-06-30 California Institute Of Technology Near real-time extraction of deposition and pre-deposition characteristics from rotating substrates and control of a deposition apparatus in near real-time
US5574589A (en) * 1995-01-09 1996-11-12 Lucent Technologies Inc. Self-amplified networks
US5937274A (en) 1995-01-31 1999-08-10 Hitachi, Ltd. Fabrication method for AlGaIn NPAsSb based devices
US5552547A (en) 1995-02-13 1996-09-03 Shi; Song Q. Organometallic complexes with built-in fluorescent dyes for use in light emitting devices
US5610744A (en) 1995-02-16 1997-03-11 Board Of Trustees Of The University Of Illinois Optical communications and interconnection networks having opto-electronic switches and direct optical routers
US5530235A (en) 1995-02-16 1996-06-25 Xerox Corporation Interactive contents revealing storage device
WO1996029725A1 (en) 1995-03-21 1996-09-26 Northern Telecom Limited Ferroelectric dielectric for integrated circuit applications at microwave frequencies
US5670798A (en) 1995-03-29 1997-09-23 North Carolina State University Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact non-nitride buffer layer and methods of fabricating same
US5679965A (en) 1995-03-29 1997-10-21 North Carolina State University Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitride buffer layer and methods of fabricating same
JP3557011B2 (ja) * 1995-03-30 2004-08-25 株式会社東芝 半導体発光素子、及びその製造方法
US5528209A (en) * 1995-04-27 1996-06-18 Hughes Aircraft Company Monolithic microwave integrated circuit and method
US6088216A (en) 1995-04-28 2000-07-11 International Business Machines Corporation Lead silicate based capacitor structures
US5606184A (en) 1995-05-04 1997-02-25 Motorola, Inc. Heterostructure field effect device having refractory ohmic contact directly on channel layer and method for making
US5528067A (en) 1995-05-08 1996-06-18 Hughes Aircraft Company Magnetic field detection
US5926496A (en) 1995-05-25 1999-07-20 Northwestern University Semiconductor micro-resonator device
US5825799A (en) 1995-05-25 1998-10-20 Northwestern University Microcavity semiconductor laser
US5790583A (en) 1995-05-25 1998-08-04 Northwestern University Photonic-well Microcavity light emitting devices
US5614739A (en) 1995-06-02 1997-03-25 Motorola HIGFET and method
JP3335075B2 (ja) 1995-06-06 2002-10-15 キヤノン株式会社 ネットワークシステム及びノード装置及び伝送制御方法
KR100189966B1 (ko) 1995-06-13 1999-06-01 윤종용 소이 구조의 모스 트랜지스터 및 그 제조방법
US5753300A (en) 1995-06-19 1998-05-19 Northwestern University Oriented niobate ferroelectric thin films for electrical and optical devices and method of making such films
JP4063896B2 (ja) 1995-06-20 2008-03-19 株式会社半導体エネルギー研究所 有色シースルー光起電力装置
CA2225681C (en) 1995-06-28 2001-09-11 Bell Communications Research, Inc. Barrier layer for ferroelectric capacitor integrated on silicon
KR100193219B1 (ko) 1995-07-06 1999-06-15 박원훈 수동형 편광변환기
US5621227A (en) 1995-07-18 1997-04-15 Discovery Semiconductors, Inc. Method and apparatus for monolithic optoelectronic integrated circuit using selective epitaxy
US5753934A (en) 1995-08-04 1998-05-19 Tok Corporation Multilayer thin film, substrate for electronic device, electronic device, and preparation of multilayer oxide thin film
US5551238A (en) 1995-08-23 1996-09-03 Prueitt; Melvin L. Hydro-air renewable power system
JPH0964477A (ja) 1995-08-25 1997-03-07 Toshiba Corp 半導体発光素子及びその製造方法
US5633724A (en) 1995-08-29 1997-05-27 Hewlett-Packard Company Evanescent scanning of biochemical array
US5905571A (en) * 1995-08-30 1999-05-18 Sandia Corporation Optical apparatus for forming correlation spectrometers and optical processors
US5635433A (en) 1995-09-11 1997-06-03 The United States Of America As Represented By The Secretary Of The Army Ceramic ferroelectric composite material-BSTO-ZnO
ES2167399T3 (es) 1995-09-21 2002-05-16 Cit Alcatel Disposicion para amplificar y combinar señales opticas y metodo para transmision corriente arriba realizada con ella.
JPH09113767A (ja) 1995-09-29 1997-05-02 Motorola Inc 光伝送構造を整合するための電子部品
US5783495A (en) 1995-11-13 1998-07-21 Micron Technology, Inc. Method of wafer cleaning, and system and cleaning solution regarding same
US5659180A (en) 1995-11-13 1997-08-19 Motorola Heterojunction interband tunnel diodes with improved P/V current ratios
DE69525535T2 (de) 1995-11-21 2002-11-28 St Microelectronics Srl Adaptiver optischer Sensor
JP3396356B2 (ja) 1995-12-11 2003-04-14 三菱電機株式会社 半導体装置，及びその製造方法
JP3645338B2 (ja) 1995-12-11 2005-05-11 株式会社東芝 不揮発性半導体記憶装置
US6022963A (en) 1995-12-15 2000-02-08 Affymetrix, Inc. Synthesis of oligonucleotide arrays using photocleavable protecting groups
KR100199095B1 (ko) 1995-12-27 1999-06-15 구본준 반도체 메모리 셀의 캐패시터 구조 및 그 제조방법
US5861966A (en) 1995-12-27 1999-01-19 Nynex Science & Technology, Inc. Broad band optical fiber telecommunications network
JP3036424B2 (ja) 1996-01-12 2000-04-24 日本電気株式会社 信号再生機能を有する光中継器
US5729394A (en) 1996-01-24 1998-03-17 Hewlett-Packard Company Multi-direction optical data port
US5745631A (en) 1996-01-26 1998-04-28 Irvine Sensors Corporation Self-aligning optical beam system
FR2744578B1 (fr) 1996-02-06 1998-04-30 Motorola Semiconducteurs Amlificateur hautes frequences
DE19607107A1 (de) 1996-02-26 1997-08-28 Sel Alcatel Ag Anordnung zur Kopplung von Signallicht zwischen einem Lichtwellenleiter und einer optoelektronischen Komponente
US5833603A (en) 1996-03-13 1998-11-10 Lipomatrix, Inc. Implantable biosensing transponder
JP3435966B2 (ja) * 1996-03-13 2003-08-11 株式会社日立製作所 強誘電体素子とその製造方法
US5801072A (en) 1996-03-14 1998-09-01 Lsi Logic Corporation Method of packaging integrated circuits
JP3258899B2 (ja) * 1996-03-19 2002-02-18 シャープ株式会社 強誘電体薄膜素子、それを用いた半導体装置、及び強誘電体薄膜素子の製造方法
US5792569A (en) 1996-03-19 1998-08-11 International Business Machines Corporation Magnetic devices and sensors based on perovskite manganese oxide materials
DE19712496A1 (de) 1996-03-26 1997-10-30 Mitsubishi Materials Corp Piezoelektrische Dünnfilm-Bauelemente
JPH09270558A (ja) 1996-03-29 1997-10-14 Fuji Photo Film Co Ltd 半導体レーザ
WO1997039354A1 (fr) 1996-04-16 1997-10-23 Kishimoto, Tadamitsu Procede de detection de cellules solides cancereuses et d'heterotypie histologique et procede d'examen du tissu dans le but d'effectuer une transplantation de moelle osseuse et une transplantation de cellules souches du sang peripherique
US5981980A (en) 1996-04-22 1999-11-09 Sony Corporation Semiconductor laminating structure
TW410272B (en) 1996-05-07 2000-11-01 Thermoscan Lnc Enhanced protective lens cover
US5780886A (en) 1996-05-30 1998-07-14 Oki Electric Industry Co., Ltd. Non-volatile semiconductor memory cell and method for production thereof
US5729641A (en) 1996-05-30 1998-03-17 Sdl, Inc. Optical device employing edge-coupled waveguide geometry
US5733641A (en) 1996-05-31 1998-03-31 Xerox Corporation Buffered substrate for semiconductor devices
US5729566A (en) * 1996-06-07 1998-03-17 Picolight Incorporated Light emitting device having an electrical contact through a layer containing oxidized material
SE518132C2 (sv) 1996-06-07 2002-08-27 Ericsson Telefon Ab L M Metod och anordning för synkronisering av kombinerade mottagare och sändare i ett cellulärt system
US5838851A (en) 1996-06-24 1998-11-17 Trw Inc. Optical-loop signal processing using reflection mechanisms
JP3193302B2 (ja) 1996-06-26 2001-07-30 ティーディーケイ株式会社 膜構造体、電子デバイス、記録媒体および強誘電体薄膜の製造方法
JP3082671B2 (ja) * 1996-06-26 2000-08-28 日本電気株式会社 トランジスタ素子及びその製造方法
US6039803A (en) 1996-06-28 2000-03-21 Massachusetts Institute Of Technology Utilization of miscut substrates to improve relaxed graded silicon-germanium and germanium layers on silicon
US5863326A (en) 1996-07-03 1999-01-26 Cermet, Inc. Pressurized skull crucible for crystal growth using the Czochralski technique
US6367699B2 (en) 1996-07-11 2002-04-09 Intermec Ip Corp. Method and apparatus for utilizing specular light to image low contrast symbols
US5858814A (en) 1996-07-17 1999-01-12 Lucent Technologies Inc. Hybrid chip and method therefor
US6051858A (en) 1996-07-26 2000-04-18 Symetrix Corporation Ferroelectric/high dielectric constant integrated circuit and method of fabricating same
IL119006A (en) 1996-08-04 2001-04-30 B G Negev Technologies And App Optical filters with adjustable stay line
US6023082A (en) 1996-08-05 2000-02-08 Lockheed Martin Energy Research Corporation Strain-based control of crystal anisotropy for perovskite oxides on semiconductor-based material
US5830270A (en) 1996-08-05 1998-11-03 Lockheed Martin Energy Systems, Inc. CaTiO3 Interfacial template structure on semiconductor-based material and the growth of electroceramic thin-films in the perovskite class
US5734672A (en) 1996-08-06 1998-03-31 Cutting Edge Optronics, Inc. Smart laser diode array assembly and operating method using same
AU3632697A (en) 1996-08-12 1998-03-06 Energenius, Inc. Semiconductor supercapacitor system, method for making same and articles produced therefrom
US5987011A (en) 1996-08-30 1999-11-16 Chai-Keong Toh Routing method for Ad-Hoc mobile networks
JP4114709B2 (ja) * 1996-09-05 2008-07-09 株式会社神戸製鋼所 ダイヤモンド膜の形成方法
US5767543A (en) 1996-09-16 1998-06-16 Motorola, Inc. Ferroelectric semiconductor device having a layered ferroelectric structure
US5838053A (en) * 1996-09-19 1998-11-17 Raytheon Ti Systems, Inc. Method of forming a cadmium telluride/silicon structure
US5789733A (en) 1996-09-20 1998-08-04 Motorola, Inc. Smart card with contactless optical interface
US5764676A (en) 1996-09-26 1998-06-09 Xerox Corporation Transversely injected multiple wavelength diode laser array formed by layer disordering
JPH10126350A (ja) 1996-10-15 1998-05-15 Nec Corp 光ネットワーク、光分岐挿入ノードおよび障害回復方式
US5725641A (en) 1996-10-30 1998-03-10 Macleod; Cheryl A. Lightfast inks for ink-jet printing
US5953468A (en) 1996-11-01 1999-09-14 Mendez R&D Associates Scalable, quantized, delay-line array based on nested, generalized spirals
DE69720041T2 (de) 1996-11-14 2004-01-08 Affymetrix, Inc., Santa Clara Chemische amplifizierung zur synthese von musterordnungen
US5719417A (en) * 1996-11-27 1998-02-17 Advanced Technology Materials, Inc. Ferroelectric integrated circuit structure
JPH10223929A (ja) 1996-12-05 1998-08-21 Showa Denko Kk ＡｌＧａＩｎＰ発光素子用基板
US5912068A (en) 1996-12-05 1999-06-15 The Regents Of The University Of California Epitaxial oxides on amorphous SiO2 on single crystal silicon
US6320238B1 (en) 1996-12-23 2001-11-20 Agere Systems Guardian Corp. Gate structure for integrated circuit fabrication
US5741724A (en) 1996-12-27 1998-04-21 Motorola Method of growing gallium nitride on a spinel substrate
US5778116A (en) 1997-01-23 1998-07-07 Tomich; John L. Photonic home area network fiber/power insertion apparatus
JP3414227B2 (ja) * 1997-01-24 2003-06-09 セイコーエプソン株式会社 インクジェット式記録ヘッド
US5812272A (en) 1997-01-30 1998-09-22 Hewlett-Packard Company Apparatus and method with tiled light source array for integrated assay sensing
US5937115A (en) * 1997-02-12 1999-08-10 Foster-Miller, Inc. Switchable optical components/structures and methods for the fabrication thereof
US5864543A (en) 1997-02-24 1999-01-26 At&T Wireless Services, Inc. Transmit/receive compensation in a time division duplex system
TW422994B (en) 1997-02-28 2001-02-21 Asahi Kasei Denshi Kk Magnetic field sensor
US5952695A (en) 1997-03-05 1999-09-14 International Business Machines Corporation Silicon-on-insulator and CMOS-on-SOI double film structures
US5872493A (en) 1997-03-13 1999-02-16 Nokia Mobile Phones, Ltd. Bulk acoustic wave (BAW) filter having a top portion that includes a protective acoustic mirror
US6211096B1 (en) 1997-03-21 2001-04-03 Lsi Logic Corporation Tunable dielectric constant oxide and method of manufacture
EP0993027A4 (en) 1997-03-28 2002-05-29 Sharp Kk PROCESS FOR MANUFACTURING SEMICONDUCTOR COMPOUNDS
US6114996A (en) 1997-03-31 2000-09-05 Qualcomm Incorporated Increased bandwidth patch antenna
US6008762A (en) 1997-03-31 1999-12-28 Qualcomm Incorporated Folded quarter-wave patch antenna
FR2761811B1 (fr) 1997-04-03 1999-07-16 France Telecom Technologie sans gravure pour integration de composants
CN1131548C (zh) * 1997-04-04 2003-12-17 松下电器产业株式会社 半导体装置
CA2258080C (en) 1997-04-11 2007-06-05 Nichia Chemical Industries, Ltd. Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor device
US5998781A (en) * 1997-04-30 1999-12-07 Sandia Corporation Apparatus for millimeter-wave signal generation
US5857049A (en) 1997-05-05 1999-01-05 Lucent Technologies, Inc., Precision alignment of optoelectronic devices
AU2712597A (en) 1997-05-13 1998-12-08 Mitsubishi Denki Kabushiki Kaisha Piezoelectric thin film device
US6103403A (en) 1997-05-15 2000-08-15 University Of Kentucky Research Foundation Intellectual Property Development Clathrate structure for electronic and electro-optic applications
US5984190A (en) 1997-05-15 1999-11-16 Micron Technology, Inc. Method and apparatus for identifying integrated circuits
US5926493A (en) 1997-05-20 1999-07-20 Sdl, Inc. Optical semiconductor device with diffraction grating structure
US5937285A (en) 1997-05-23 1999-08-10 Motorola, Inc. Method of fabricating submicron FETs with low temperature group III-V material
DE69734871D1 (de) 1997-05-30 2006-01-19 St Microelectronics Srl Verfahren zur Herstellung eines Germanium-implantierten bipolaren Heteroübergangtransistors
US6150239A (en) 1997-05-31 2000-11-21 Max Planck Society Method for the transfer of thin layers monocrystalline material onto a desirable substrate
KR100243294B1 (ko) 1997-06-09 2000-02-01 윤종용 반도체장치의 강유전체 메모리 셀 및 어레이
DE19725900C2 (de) 1997-06-13 2003-03-06 Dieter Bimberg Verfahren zur Abscheidung von Galliumnitrid auf Silizium-Substraten
DE69827824T3 (de) 1997-06-24 2009-09-03 Massachusetts Institute Of Technology, Cambridge Kontrolle der verspannungsdichte durch verwendung von gradientenschichten und durch planarisierung
US5869845A (en) 1997-06-26 1999-02-09 Texas Instruments Incorporated Resonant tunneling memory
US5852687A (en) 1997-07-09 1998-12-22 Trw Inc. Integrated optical time delay unit
US6153454A (en) 1997-07-09 2000-11-28 Advanced Micro Devices, Inc. Convex device with selectively doped channel
JP3813740B2 (ja) 1997-07-11 2006-08-23 Ｔｄｋ株式会社 電子デバイス用基板
US5831960A (en) * 1997-07-17 1998-11-03 Motorola, Inc. Integrated vertical cavity surface emitting laser pair for high density data storage and method of fabrication
US5963291A (en) 1997-07-21 1999-10-05 Chorum Technologies Inc. Optical attenuator using polarization modulation and a feedback controller
US6078717A (en) 1997-07-22 2000-06-20 Fuji Xerox Co., Ltd. Opical waveguide device
US6020243A (en) * 1997-07-24 2000-02-01 Texas Instruments Incorporated Zirconium and/or hafnium silicon-oxynitride gate dielectric
US5962069A (en) 1997-07-25 1999-10-05 Symetrix Corporation Process for fabricating layered superlattice materials and AB03 type metal oxides without exposure to oxygen at high temperatures
US6222654B1 (en) 1997-08-04 2001-04-24 Lucent Technologies, Inc. Optical node system for a ring architecture and method thereof
US5940691A (en) 1997-08-20 1999-08-17 Micron Technology, Inc. Methods of forming SOI insulator layers and methods of forming transistor devices
US5907792A (en) 1997-08-25 1999-05-25 Motorola,Inc. Method of forming a silicon nitride layer
JP4221765B2 (ja) 1997-08-29 2009-02-12 ソニー株式会社 光集積化酸化物装置および光集積化酸化物装置の製造方法
US6002375A (en) 1997-09-02 1999-12-14 Motorola, Inc. Multi-substrate radio-frequency circuit
US5981400A (en) 1997-09-18 1999-11-09 Cornell Research Foundation, Inc. Compliant universal substrate for epitaxial growth
US6184144B1 (en) 1997-10-10 2001-02-06 Cornell Research Foundation, Inc. Methods for growing defect-free heteroepitaxial layers
US6265749B1 (en) 1997-10-14 2001-07-24 Advanced Micro Devices, Inc. Metal silicide transistor gate spaced from a semiconductor substrate by a ceramic gate dielectric having a high dielectric constant
JP4204108B2 (ja) * 1997-11-06 2009-01-07 エピフォトニクス株式会社 光導波路素子およびその製造方法
US5987196A (en) * 1997-11-06 1999-11-16 Micron Technology, Inc. Semiconductor structure having an optical signal path in a substrate and method for forming the same
US6376337B1 (en) * 1997-11-10 2002-04-23 Nanodynamics, Inc. Epitaxial SiOx barrier/insulation layer
JP3658160B2 (ja) 1997-11-17 2005-06-08 キヤノン株式会社 モールドレス半導体装置
US6058131A (en) 1997-11-17 2000-05-02 E-Tek Dynamics, Inc. Wavelength stabilization of laser source using fiber Bragg grating feedback
US6277436B1 (en) 1997-11-26 2001-08-21 Advanced Technology Materials, Inc. Liquid delivery MOCVD process for deposition of high frequency dielectric materials
US6197503B1 (en) 1997-11-26 2001-03-06 Ut-Battelle, Llc Integrated circuit biochip microsystem containing lens
US6049702A (en) 1997-12-04 2000-04-11 Rockwell Science Center, Llc Integrated passive transceiver section
JP3092659B2 (ja) 1997-12-10 2000-09-25 日本電気株式会社 薄膜キャパシタ及びその製造方法
US6069368A (en) 1997-12-15 2000-05-30 Texas Instruments Incorporated Method for growing high-quality crystalline Si quantum wells for RTD structures
US6020222A (en) 1997-12-16 2000-02-01 Advanced Micro Devices, Inc. Silicon oxide insulator (SOI) semiconductor having selectively linked body
US5966323A (en) 1997-12-18 1999-10-12 Motorola, Inc. Low switching field magnetoresistive tunneling junction for high density arrays
EP0926739A1 (en) 1997-12-24 1999-06-30 Texas Instruments Incorporated A structure of and method for forming a mis field effect transistor
US6093302A (en) 1998-01-05 2000-07-25 Combimatrix Corporation Electrochemical solid phase synthesis
US5977567A (en) 1998-01-06 1999-11-02 Lightlogic, Inc. Optoelectronic assembly and method of making the same
US6140696A (en) * 1998-01-27 2000-10-31 Micron Technology, Inc. Vertically mountable semiconductor device and methods
US6278523B1 (en) 1998-02-13 2001-08-21 Centre National De La Recherche Scientifique-Cnrs Optical sensor on a silicon substrate and application for the in situ measurement of a fluorescent marker in the small bronchia
US6069581A (en) 1998-02-20 2000-05-30 Amerigon High performance vehicle radar system
GB2334594A (en) 1998-02-20 1999-08-25 Fujitsu Telecommunications Eur Arrayed waveguide grating device
DE59801853D1 (de) 1998-02-20 2001-11-29 Stocko Contact Gmbh & Co Kg Vertikal montierbarer, kurzbauender Chipkartenleser
US6011646A (en) 1998-02-20 2000-01-04 The Regents Of The Unviersity Of California Method to adjust multilayer film stress induced deformation of optics
JPH11274467A (ja) 1998-03-26 1999-10-08 Murata Mfg Co Ltd 光電子集積回路素子
CA2268997C (en) 1998-05-05 2005-03-22 National Research Council Of Canada Quantum dot infrared photodetectors (qdip) and methods of making the same
JPH11330411A (ja) 1998-05-13 1999-11-30 Matsushita Electric Ind Co Ltd 半導体記憶装置及びその製造方法
US6055179A (en) 1998-05-19 2000-04-25 Canon Kk Memory device utilizing giant magnetoresistance effect
US6064078A (en) 1998-05-22 2000-05-16 Xerox Corporation Formation of group III-V nitride films on sapphire substrates with reduced dislocation densities
EP0961371B1 (en) 1998-05-25 2001-09-12 Alcatel Optoelectronic module containing at least one optoelectronic component and temperature stabilising method
FI108583B (fi) 1998-06-02 2002-02-15 Nokia Corp Resonaattorirakenteita
US6372356B1 (en) 1998-06-04 2002-04-16 Xerox Corporation Compliant substrates for growing lattice mismatched films
US6113690A (en) 1998-06-08 2000-09-05 Motorola, Inc. Method of preparing crystalline alkaline earth metal oxides on a Si substrate
JPH11354820A (ja) 1998-06-12 1999-12-24 Sharp Corp 光電変換素子及びその製造方法
FR2779843A1 (fr) 1998-06-16 1999-12-17 Busless Computers Composant memoire multiport serie et application a un ordinateur
US6338756B2 (en) * 1998-06-30 2002-01-15 Seh America, Inc. In-situ post epitaxial treatment process
KR20000003975A (ko) 1998-06-30 2000-01-25 김영환 필드 산화막을 구비한 본딩형 실리콘 이중막 웨이퍼 제조방법
US6121642A (en) 1998-07-20 2000-09-19 International Business Machines Corporation Junction mott transition field effect transistor (JMTFET) and switch for logic and memory applications
US6128178A (en) 1998-07-20 2000-10-03 International Business Machines Corporation Very thin film capacitor for dynamic random access memory (DRAM)
JP3450713B2 (ja) * 1998-07-21 2003-09-29 富士通カンタムデバイス株式会社 半導体装置およびその製造方法、マイクロストリップ線路の製造方法
US6103008A (en) 1998-07-30 2000-08-15 Ut-Battelle, Llc Silicon-integrated thin-film structure for electro-optic applications
US6393167B1 (en) 1998-07-31 2002-05-21 Monica K. Davis Fast, environmentally-stable fiber switches using a Sagnac interferometer
US6392253B1 (en) * 1998-08-10 2002-05-21 Arjun J. Saxena Semiconductor device with single crystal films grown on arrayed nucleation sites on amorphous and/or non-single crystal surfaces
US6278138B1 (en) 1998-08-28 2001-08-21 Sony Corporation Silicon-based functional matrix substrate and optical integrated oxide device
US6300615B1 (en) 1998-08-31 2001-10-09 Canon Kabushiki Kaisha Photoelectric conversion apparatus
US6022410A (en) 1998-09-01 2000-02-08 Motorola, Inc. Alkaline-earth metal silicides on silicon
JP3289683B2 (ja) 1998-09-04 2002-06-10 株式会社村田製作所 半導体発光素子
JP3159255B2 (ja) 1998-09-16 2001-04-23 日本電気株式会社 強誘電体容量で用いる電極のスパッタ成長方法
US6191011B1 (en) 1998-09-28 2001-02-20 Ag Associates (Israel) Ltd. Selective hemispherical grain silicon deposition
US6252261B1 (en) 1998-09-30 2001-06-26 Nec Corporation GaN crystal film, a group III element nitride semiconductor wafer and a manufacturing process therefor
TW399309B (en) 1998-09-30 2000-07-21 World Wiser Electronics Inc Cavity-down package structure with thermal via
US6343171B1 (en) 1998-10-09 2002-01-29 Fujitsu Limited Systems based on opto-electronic substrates with electrical and optical interconnections and methods for making
JP3592553B2 (ja) 1998-10-15 2004-11-24 株式会社東芝 窒化ガリウム系半導体装置
JP3430036B2 (ja) 1998-10-29 2003-07-28 松下電器産業株式会社 薄膜の形成方法及び半導体発光素子の製造方法
US6355939B1 (en) 1998-11-03 2002-03-12 Lockheed Martin Corporation Multi-band infrared photodetector
US6255198B1 (en) 1998-11-24 2001-07-03 North Carolina State University Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby
JP3408762B2 (ja) * 1998-12-03 2003-05-19 シャープ株式会社 Ｓｏｉ構造の半導体装置及びその製造方法
FR2786887B1 (fr) 1998-12-08 2001-01-26 Cit Alcatel Modulateur de phase a semi-conducteur
JP3050542B1 (ja) 1998-12-18 2000-06-12 有限会社新城製作所 穴付き頭部をもつねじ及びそのドライバビット
US6143366A (en) 1998-12-24 2000-11-07 Lu; Chung Hsin High-pressure process for crystallization of ceramic films at low temperatures
US6173474B1 (en) 1999-01-08 2001-01-16 Fantom Technologies Inc. Construction of a vacuum cleaner head
JP4511739B2 (ja) 1999-01-15 2010-07-28 ザ リージェンツ オブ ザ ユニヴァーシティ オブ カリフォルニア マイクロ電子機械システムを形成するための多結晶シリコンゲルマニウム膜
US6180486B1 (en) 1999-02-16 2001-01-30 International Business Machines Corporation Process of fabricating planar and densely patterned silicon-on-insulator structure
US6248459B1 (en) * 1999-03-22 2001-06-19 Motorola, Inc. Semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon
US6241821B1 (en) * 1999-03-22 2001-06-05 Motorola, Inc. Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon
TW460717B (en) 1999-03-30 2001-10-21 Toppan Printing Co Ltd Optical wiring layer, optoelectric wiring substrate mounted substrate, and methods for manufacturing the same
US6143072A (en) 1999-04-06 2000-11-07 Ut-Battelle, Llc Generic process for preparing a crystalline oxide upon a group IV semiconductor substrate
DE10017137A1 (de) 1999-04-14 2000-10-26 Siemens Ag Silizium-Aufbau und Verfahren zu dessen Herstellung
JP4631103B2 (ja) 1999-05-19 2011-02-16 ソニー株式会社 半導体装置およびその製造方法
US6312819B1 (en) 1999-05-26 2001-11-06 The Regents Of The University Of California Oriented conductive oxide electrodes on SiO2/Si and glass
JP3748011B2 (ja) 1999-06-11 2006-02-22 東芝セラミックス株式会社 ＧａＮ半導体結晶成長用Ｓｉウエーハ、それを用いたＧａＮ発光素子用ウエーハ及びそれらの製造方法
US6372813B1 (en) 1999-06-25 2002-04-16 Motorola Methods and compositions for attachment of biomolecules to solid supports, hydrogels, and hydrogel arrays
JP2000068466A (ja) 1999-07-01 2000-03-03 Seiko Epson Corp 半導体記憶装置
US6270568B1 (en) 1999-07-15 2001-08-07 Motorola, Inc. Method for fabricating a semiconductor structure with reduced leakage current density
US6319730B1 (en) 1999-07-15 2001-11-20 Motorola, Inc. Method of fabricating a semiconductor structure including a metal oxide interface
US6107721A (en) 1999-07-27 2000-08-22 Tfr Technologies, Inc. Piezoelectric resonators on a differentially offset reflector
US6275122B1 (en) 1999-08-17 2001-08-14 International Business Machines Corporation Encapsulated MEMS band-pass filter for integrated circuits
US6238946B1 (en) 1999-08-17 2001-05-29 International Business Machines Corporation Process for fabricating single crystal resonant devices that are compatible with integrated circuit processing
US6389209B1 (en) 1999-09-07 2002-05-14 Agere Systems Optoelectronics Guardian Corp. Strain free planar optical waveguides
EP1085319B1 (en) 1999-09-13 2005-06-01 Interuniversitair Micro-Elektronica Centrum Vzw A device for detecting an analyte in a sample based on organic materials
US6306668B1 (en) 1999-09-23 2001-10-23 Ut-Battelle, Llc Control method and system for use when growing thin-films on semiconductor-based materials
JP2001102676A (ja) * 1999-09-27 2001-04-13 Toshiba Electronic Engineering Corp 光集積ユニット、光ピックアップ及び光記録媒体駆動装置
US6326637B1 (en) 1999-10-18 2001-12-04 International Business Machines Corporation Antiferromagnetically exchange-coupled structure for magnetic tunnel junction device
US6340788B1 (en) 1999-12-02 2002-01-22 Hughes Electronics Corporation Multijunction photovoltaic cells and panels using a silicon or silicon-germanium active substrate cell for space and terrestrial applications
US6291319B1 (en) 1999-12-17 2001-09-18 Motorola, Inc. Method for fabricating a semiconductor structure having a stable crystalline interface with silicon
US6479173B1 (en) 1999-12-17 2002-11-12 Motorola, Inc. Semiconductor structure having a crystalline alkaline earth metal silicon nitride/oxide interface with silicon
US6268269B1 (en) 1999-12-30 2001-07-31 United Microelectronics Corp. Method for fabricating an oxide layer on silicon with carbon ions introduced at the silicon/oxide interface in order to reduce hot carrier effects
US6251738B1 (en) 2000-01-10 2001-06-26 International Business Machines Corporation Process for forming a silicon-germanium base of heterojunction bipolar transistor
US6404027B1 (en) 2000-02-07 2002-06-11 Agere Systems Guardian Corp. High dielectric constant gate oxides for silicon-based devices
US20010013313A1 (en) 2000-02-10 2001-08-16 Motorola, Inc. Apparatus for fabricating semiconductor structures and method of forming the structures
US6392257B1 (en) * 2000-02-10 2002-05-21 Motorola Inc. Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
US6731585B2 (en) * 2000-03-03 2004-05-04 Matsushita Electric Industrial Co., Ltd. Optical pick-up head with semiconductor laser
JP2001251283A (ja) * 2000-03-06 2001-09-14 Hitachi Ltd インターフェース回路
US6348373B1 (en) 2000-03-29 2002-02-19 Sharp Laboratories Of America, Inc. Method for improving electrical properties of high dielectric constant films
US6313486B1 (en) 2000-06-15 2001-11-06 Board Of Regents, The University Of Texas System Floating gate transistor having buried strained silicon germanium channel layer
US20020008234A1 (en) 2000-06-28 2002-01-24 Motorola, Inc. Mixed-signal semiconductor structure, device including the structure, and methods of forming the device and the structure
US20020030246A1 (en) 2000-06-28 2002-03-14 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices not lattice matched to the substrate
US6521996B1 (en) * 2000-06-30 2003-02-18 Intel Corporation Ball limiting metallurgy for input/outputs and methods of fabrication
US6427066B1 (en) * 2000-06-30 2002-07-30 Motorola, Inc. Apparatus and method for effecting communications among a plurality of remote stations
US6477285B1 (en) * 2000-06-30 2002-11-05 Motorola, Inc. Integrated circuits with optical signal propagation
US6410941B1 (en) * 2000-06-30 2002-06-25 Motorola, Inc. Reconfigurable systems using hybrid integrated circuits with optical ports
JP2002023123A (ja) 2000-07-11 2002-01-23 Fujitsu Ltd 非主要光を導波する光導波路を備える光回路
US6432546B1 (en) * 2000-07-24 2002-08-13 Motorola, Inc. Microelectronic piezoelectric structure and method of forming the same
US6224669B1 (en) 2000-09-14 2001-05-01 Motorola, Inc. Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon
US6563118B2 (en) 2000-12-08 2003-05-13 Motorola, Inc. Pyroelectric device on a monocrystalline semiconductor substrate and process for fabricating same
US6528374B2 (en) * 2001-02-05 2003-03-04 International Business Machines Corporation Method for forming dielectric stack without interfacial layer
US6297598B1 (en) * 2001-02-20 2001-10-02 Harvatek Corp. Single-side mounted light emitting diode module
JP4056226B2 (ja) 2001-02-23 2008-03-05 株式会社ルネサステクノロジ 半導体装置
US6788839B2 (en) 2001-03-19 2004-09-07 General Instrument Corporation Time slot tunable all-optical packet data routing switch
US20020195610A1 (en) * 2001-06-20 2002-12-26 Motorola, Inc. Structure and method for fabricating a semiconductor device with a side interconnect
US6462360B1 (en) 2001-08-06 2002-10-08 Motorola, Inc. Integrated gallium arsenide communications systems
JP2003142479A (ja) * 2001-11-02 2003-05-16 Fujitsu Ltd 半導体装置、エピタキシャル膜の製造方法、およびレーザアブレーション装置

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