CN1767380A - 压电薄膜谐振器及使用该压电薄膜谐振器的滤波器 - Google Patents
压电薄膜谐振器及使用该压电薄膜谐振器的滤波器 Download PDFInfo
- Publication number
- CN1767380A CN1767380A CNA2005101170072A CN200510117007A CN1767380A CN 1767380 A CN1767380 A CN 1767380A CN A2005101170072 A CNA2005101170072 A CN A2005101170072A CN 200510117007 A CN200510117007 A CN 200510117007A CN 1767380 A CN1767380 A CN 1767380A
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- Prior art keywords
- thin film
- piezoelectric thin
- piezoelectric
- bottom electrode
- top electrode
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Links
- 239000010409 thin film Substances 0.000 title claims abstract description 73
- 239000012528 membrane Substances 0.000 claims abstract description 82
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 239000010408 film Substances 0.000 claims description 45
- 239000013589 supplement Substances 0.000 claims description 33
- 238000000605 extraction Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 230000001788 irregular Effects 0.000 claims description 3
- 230000037431 insertion Effects 0.000 claims 2
- 238000003780 insertion Methods 0.000 claims 2
- 239000004411 aluminium Substances 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 210000004379 membrane Anatomy 0.000 description 54
- 238000004519 manufacturing process Methods 0.000 description 7
- 229910017083 AlN Inorganic materials 0.000 description 6
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 238000010897 surface acoustic wave method Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000006872 improvement Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 210000002469 basement membrane Anatomy 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
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- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
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- 238000000034 method Methods 0.000 description 1
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- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02149—Means for compensation or elimination of undesirable effects of ageing changes of characteristics, e.g. electro-acousto-migration
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02118—Means for compensation or elimination of undesirable effects of lateral leakage between adjacent resonators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
- H03H9/132—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials characterized by a particular shape
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/174—Membranes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
- H03H2003/0421—Modification of the thickness of an element
- H03H2003/0428—Modification of the thickness of an element of an electrode
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
Claims (17)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004313727A JP4535841B2 (ja) | 2004-10-28 | 2004-10-28 | 圧電薄膜共振子及びこれを用いたフィルタ |
JP2004313727 | 2004-10-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1767380A true CN1767380A (zh) | 2006-05-03 |
CN100505531C CN100505531C (zh) | 2009-06-24 |
Family
ID=35655698
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005101170072A Active CN100505531C (zh) | 2004-10-28 | 2005-10-28 | 压电薄膜谐振器及使用该压电薄膜谐振器的滤波器 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7884527B2 (zh) |
EP (2) | EP2259425A1 (zh) |
JP (1) | JP4535841B2 (zh) |
KR (1) | KR100753705B1 (zh) |
CN (1) | CN100505531C (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102931942A (zh) * | 2011-08-09 | 2013-02-13 | 太阳诱电株式会社 | 声波器件 |
CN111106812A (zh) * | 2019-12-30 | 2020-05-05 | 武汉大学 | 一种高性能薄膜体声波谐振器及其制备方法 |
CN113098426A (zh) * | 2021-03-15 | 2021-07-09 | 武汉大学 | 高频低损耗滤波器、谐振器及制备方法 |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005073175A (ja) * | 2003-08-27 | 2005-03-17 | Fujitsu Media Device Kk | 圧電薄膜共振子及びその製造方法 |
JP4719623B2 (ja) * | 2006-05-31 | 2011-07-06 | 太陽誘電株式会社 | フィルタ |
JP5027534B2 (ja) * | 2006-07-07 | 2012-09-19 | 日本碍子株式会社 | 圧電薄膜デバイス |
JP4968900B2 (ja) | 2006-10-17 | 2012-07-04 | 太陽誘電株式会社 | ラダー型フィルタの製造方法 |
JP4838093B2 (ja) | 2006-10-25 | 2011-12-14 | 太陽誘電株式会社 | 圧電薄膜共振器およびフィルタ |
JP2008182543A (ja) * | 2007-01-25 | 2008-08-07 | Ube Ind Ltd | 薄膜圧電共振器とそれを用いた薄膜圧電フィルタ |
JP5080858B2 (ja) * | 2007-05-17 | 2012-11-21 | 太陽誘電株式会社 | 圧電薄膜共振器およびフィルタ |
WO2009011022A1 (ja) | 2007-07-13 | 2009-01-22 | Fujitsu Limited | 圧電薄膜共振素子及びこれを用いた回路部品 |
JP5563739B2 (ja) * | 2008-02-20 | 2014-07-30 | 太陽誘電株式会社 | 圧電薄膜共振器、フィルタ、デュープレクサ、通信モジュール、および通信装置 |
CN101960717B (zh) | 2008-03-04 | 2014-04-23 | 太阳诱电株式会社 | 压电薄膜谐振器、滤波器、通信模块及通信装置 |
JP5226409B2 (ja) * | 2008-07-17 | 2013-07-03 | 太陽誘電株式会社 | 共振デバイス、通信モジュール、通信装置、共振デバイスの製造方法 |
US8242664B2 (en) * | 2008-12-26 | 2012-08-14 | Nihon Dempa Kogyo Co., Ltd. | Elastic wave device and electronic component |
JP4944145B2 (ja) * | 2009-03-19 | 2012-05-30 | 太陽誘電株式会社 | 圧電薄膜共振子、フィルタ、通信モジュール、通信装置 |
JP5319491B2 (ja) | 2009-10-22 | 2013-10-16 | 太陽誘電株式会社 | 圧電薄膜共振子 |
KR101856060B1 (ko) | 2011-12-01 | 2018-05-10 | 삼성전자주식회사 | 체적 음향 공진기 |
US20130280557A1 (en) * | 2012-04-24 | 2013-10-24 | Electronics And Telecommunications Research Institute | Ultrasonic rechargeable battery module and ultrasonic rechargeable battery apparatus of polyhedral structure including the same |
JP6336712B2 (ja) * | 2013-01-28 | 2018-06-06 | 太陽誘電株式会社 | 圧電薄膜共振器、フィルタおよびデュプレクサ |
JP5591977B2 (ja) * | 2013-04-30 | 2014-09-17 | 太陽誘電株式会社 | 圧電薄膜共振器、フィルタ、デュープレクサ、通信モジュール、および通信装置 |
JP6325799B2 (ja) | 2013-11-11 | 2018-05-16 | 太陽誘電株式会社 | 圧電薄膜共振器、フィルタおよびデュプレクサ |
JP6325798B2 (ja) | 2013-11-11 | 2018-05-16 | 太陽誘電株式会社 | 圧電薄膜共振器、フィルタおよびデュプレクサ |
JP6333540B2 (ja) * | 2013-11-11 | 2018-05-30 | 太陽誘電株式会社 | 圧電薄膜共振子、フィルタ、及び分波器 |
JP6368298B2 (ja) * | 2015-12-14 | 2018-08-01 | 太陽誘電株式会社 | 圧電薄膜共振器、フィルタおよびデュプレクサ |
JP6668201B2 (ja) | 2016-08-31 | 2020-03-18 | 太陽誘電株式会社 | 圧電薄膜共振器、フィルタおよびマルチプレクサ。 |
US10256788B2 (en) * | 2017-03-31 | 2019-04-09 | Avago Technologies International Sales Pte. Limited | Acoustic resonator including extended cavity |
CN114301411B (zh) * | 2021-09-23 | 2023-02-17 | 武汉敏声新技术有限公司 | 一种体声波谐振器和体声波滤波器 |
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US3382381A (en) * | 1965-05-27 | 1968-05-07 | Piezo Technology Inc | Tab plateback |
JPS60149215A (ja) * | 1983-12-29 | 1985-08-06 | Nec Corp | 圧電薄膜複合振動子 |
JP2644855B2 (ja) | 1988-10-24 | 1997-08-25 | 株式会社日立製作所 | 弾性波フィルタ、及びそれを用いたアンテナ分波器 |
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US6150703A (en) * | 1998-06-29 | 2000-11-21 | Trw Inc. | Lateral mode suppression in semiconductor bulk acoustic resonator (SBAR) devices using tapered electrodes, and electrodes edge damping materials |
JP2000165187A (ja) | 1998-11-30 | 2000-06-16 | Kyocera Corp | 圧電共振子 |
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JP2005236337A (ja) * | 2001-05-11 | 2005-09-02 | Ube Ind Ltd | 薄膜音響共振器及びその製造方法 |
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JP3939939B2 (ja) * | 2001-07-17 | 2007-07-04 | 富士通株式会社 | 圧電薄膜共振素子の製造方法 |
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EP1533896B1 (en) * | 2003-11-20 | 2011-11-02 | Panasonic Corporation | Piezoelectric element, composite piezoelectric element, and filter, duplexer and communication equipment using the same |
-
2004
- 2004-10-28 JP JP2004313727A patent/JP4535841B2/ja active Active
-
2005
- 2005-10-11 KR KR1020050095651A patent/KR100753705B1/ko active IP Right Grant
- 2005-10-26 EP EP10170336A patent/EP2259425A1/en not_active Ceased
- 2005-10-26 EP EP05256649A patent/EP1653612A3/en not_active Ceased
- 2005-10-27 US US11/259,347 patent/US7884527B2/en active Active
- 2005-10-28 CN CNB2005101170072A patent/CN100505531C/zh active Active
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102931942A (zh) * | 2011-08-09 | 2013-02-13 | 太阳诱电株式会社 | 声波器件 |
CN102931942B (zh) * | 2011-08-09 | 2015-10-21 | 太阳诱电株式会社 | 声波器件 |
US9184725B2 (en) | 2011-08-09 | 2015-11-10 | Taiyo Yuden Co., Ltd. | Acoustic wave device |
CN111106812A (zh) * | 2019-12-30 | 2020-05-05 | 武汉大学 | 一种高性能薄膜体声波谐振器及其制备方法 |
CN113098426A (zh) * | 2021-03-15 | 2021-07-09 | 武汉大学 | 高频低损耗滤波器、谐振器及制备方法 |
Also Published As
Publication number | Publication date |
---|---|
CN100505531C (zh) | 2009-06-24 |
US20060091764A1 (en) | 2006-05-04 |
JP2006128993A (ja) | 2006-05-18 |
KR20060052188A (ko) | 2006-05-19 |
KR100753705B1 (ko) | 2007-08-30 |
EP1653612A2 (en) | 2006-05-03 |
EP2259425A1 (en) | 2010-12-08 |
US7884527B2 (en) | 2011-02-08 |
EP1653612A3 (en) | 2007-06-27 |
JP4535841B2 (ja) | 2010-09-01 |
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