CN1789110A - 微机电系统到有源电路的晶片接合 - Google Patents

微机电系统到有源电路的晶片接合 Download PDF

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CN1789110A
CN1789110A CNA200510117764XA CN200510117764A CN1789110A CN 1789110 A CN1789110 A CN 1789110A CN A200510117764X A CNA200510117764X A CN A200510117764XA CN 200510117764 A CN200510117764 A CN 200510117764A CN 1789110 A CN1789110 A CN 1789110A
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托马斯·E·邓根
罗纳德·S·法齐欧
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Abstract

本发明公开了一种单个集成晶片封装，包括微机电系统晶片、有源器件晶片和密封环。微机电系统晶片具有第一表面并在其第一表面上包括至少一个微机电系统部件。有源器件晶片具有第一表面并在其第一表面上包括有源器件电路。密封环与微机电系统晶片的第一表面相邻使得绕微机电系统部件形成密封。在晶片封装上设置外部触头。外部触头可从外部访问晶片封装且电耦合到有源器件晶片的有源器件电路。

Description

微机电系统到有源电路的晶片接合
技术领域
本发明涉及在晶片级的电器件的制造，更具体地，涉及微机电系统部件在晶片级被接合到有源半导体部件。
背景技术
许多电器件是非常敏感的而且需要保护以免遭苛刻的外部条件和环境中的有害污染。对于诸如薄膜体声波谐振器(FBAR)、表面安装声波谐振器(SMR)、和表面声波(SAW)器件之类的微机电系统(MEMS)器件尤其如此。传统地，将这样的MEMS器件隔绝在气密封装中或者通过在MEMS器件之上设置微盖层以将器件从周围环境气密密封。
这样气密密封的MEMS器件必须也设置入口点使得可以进行电连接到MEMS器件。例如，在晶片封装中配置有微盖的FBAR器件必须设置有穿过微盖或其他地方的孔或过孔，使得可以将晶片封装内的FBAR器件进行电连接到诸如半导体部件之类的其他外部电部件。由于MEMS器件和有源半导体器件两者都需要专用的制造程序，所以将MEMS器件和有源电路两者直接构造在单个晶片上需要在性能、制造性和成本上有很大折衷。
由于这些及其他原因，存在对本发明的需求。
发明内容
本发明的一个方面提供了一种单个集成晶片封装，包括微机电系统(MEMS)晶片、有源器件晶片、和密封环。MEMS晶片具有第一表面并在其第一表面上包括至少一个MEMS部件。有源器件晶片具有第一表面并在其第一表面上包括有源器件电路。密封环与MEMS晶片的第一表面相邻使得围绕微机电系统部件形成气密密封。在晶片封装上设置外部触头。外部触头可从外部访问晶片封装且电耦合到有源器件晶片的有源器件电路。
附图说明
包括附图以提供对本发明的进一步理解且附图被结合并组成此说明书的一部分。附图图示了本发明的实施例并与说明一起用于解释本发明的原理。当通过参考以下详细说明而使本发明更好理解时，将容易察觉到本发明的其他实施例和本发明的许多预期优点。附图的元件不必按照相对于彼此的比例绘制。相似的标号标示对应的相似部分。
图1图示了根据本发明，包括MEMS晶片和有源器件晶片的单个集成晶片封装的剖视图。
图2A-2C图示了根据本发明，用于制造图1的单个集成晶片封装的处理步骤。
图3图示了根据本发明，包括MEMS晶片和有源器件晶片的其他单个集成晶片封装的剖视图。
图4A-4C图示了根据本发明，用于制造图3的单个集成晶片封装的处理步骤。
图5图示了根据本发明，包括MEMS晶片和有源器件晶片的其他单个集成晶片封装的剖视图。
图6图示了图5的单个集成晶片封装的俯视图。
图7A-7C图示了根据本发明，用于制造图5的单个集成晶片封装的处理步骤。
具体实施方式
在以下详细描述中，对附图进行参考，附图形成为本文的一部分，且其中通过图解示出了本发明可以实现的具体实施例。在这点上，参考正被描述的一个或多个图的方向，使用方位术语，例如“顶”、“底”、“前”、“后”、“顶端”、“尾端”等等。由于本发明实施例的部件可以定位在多个不同方向上，所以方位术语用于解释的目的而非限制。应理解的是，可以利用其他实施例且可以进行结构或逻辑的变化而不偏离本发明的范围。因此，采用以下详细说明并不意味着限制，而本发明的范围由所附权利要求界定。
图1图示了根据本发明的单个集成晶片级封装10。晶片封装10包括MEMS晶片12、微盖14、和有源器件晶片16。在一个实施例中，MEMS晶片12是薄膜体声波谐振器(FBAR)衬底晶片而有源晶片12是互补金属氧化物半导体(CMOS)衬底晶片。晶片封装10将MEMS晶片12和有源器件晶片16结合为单个集成晶片封装，同时每个仍然在晶片级。晶片封装10接着包括外部触头(以下进一步讨论的40和46)，其可从外部访问晶片封装10，这使得晶片封装10可以电耦合到其他外部部件。
在一个实施例中，MEMS晶片12在第一表面11上包括诸如第一FBAR 20和第二FBAR 22之类的MEMS部件。第一MEMS晶片触头24和第二MEMS晶片触头26也在MEMS晶片12的第一表面11上，并分别电耦合到第一FBAR 20和第二FBAR 22。最后，MEMS晶片12的第一表面11包括绕MEMS晶片12的第一表面11的外周延伸的外周焊盘28。
微盖14包括第一表面13和第二表面15。第一微盖过孔32和第二微盖过孔34从第一表面13延伸穿过微盖14到第二表面15。第一微盖触头32A在第一过孔32内延伸并沿着第二表面15延伸。类似地，第二微盖触头34A在第二过孔34内延伸并沿着第二表面15延伸。
有源器件晶片16包括承载诸如CMOS电路之类的有源器件电路的第一表面17。第一有源晶片内侧焊盘42和第二有源晶片内侧焊盘44与第一表面17相邻，且第一有源晶片外侧焊盘40和第二有源晶片外侧焊盘46与第一表面17相邻。焊盘42至46提供到有源器件晶片16的有源器件电路的电连接。第一有源晶片柱36和第二有源晶片柱38在有源器件晶片16的第一表面17与微盖14的第二表面15之间。
在晶片封装10中，微盖14保护MEMS晶片12，并还提供与有源器件晶片16的电连接。根据本发明，在晶片级制造晶片封装10使得当单一化晶片封装10时MEMS晶片12与有源器件晶片16已经电耦合。这样，从而免除了在单一化之后将MEMS晶片12电耦合到有源器件晶片16的步骤。
微盖14对MEMS晶片12的第一FBAR 20和第二FBAR 22提供保护和密封。在一个实施例中，所提供的密封是气密密封。具体地，密封环30在MEMS晶片12与微盖14之间绕它们的与MEMS晶片12的焊盘28紧邻的外周延伸。这样，密封环30围绕第一FBAR 20和第二FBAR 22。因此，在一个实施例中，密封环30、MEMS晶片12的第一表面11、和微盖14的第一表面13的组合形成了密封室，其气密地密封第一FBAR 20和第二FBAR 22。可以以现有技术中已知的各种方式与微盖14协同形成密封环30。为了帮助抵靠密封环30来密封，微盖14可以具有与MEMS晶片12的焊盘28类似的焊盘或垫圈。
MEMS晶片12包括导电的第一触头24和第二触头26。第一触头24电耦合到第一FBAR 20且第二触头26电耦合到第二FBAR 22。通孔或过孔32和34分别设置有触头32A和34A，其分别电耦合到第一触头24和第二触头26。过孔32和34以及对应的触头32A和34A提供了穿过微盖14与第一FBAR 20和第二FBAR 22的电连接。柱36和38接着分别与触头32A和34A电连接。柱36和38还电耦合到有源器件晶片16。具体地，第一内侧焊盘42和第二内侧焊盘44分别耦合到柱36和38。这样，微盖14提供了在MEMS晶片12和有源器件晶片16之间的电连接，同时也密封和保护第一FBAR 20和第二FBAR 22。第一外侧焊盘40和第二外侧焊盘46设置在有源器件晶片16上以提供有源器件晶片16到外部器件的电连接。
可以以与本发明相容的各种方式制造晶片封装10。图2A-2C中图示了根据一个示例性制造程序的晶片封装10的制造。在图2A中，图示了MEMS晶片12被耦合到微盖14。在制造程序的此步骤中，图示了在薄化之前的微盖14。第一过孔32和第二过孔34被刻蚀到微盖14的面向MEMS晶片12的第一表面11的表面13中。第一过孔32和第二过孔34与MEMS晶片12的第一表面11上的焊盘对准。因为微盖14还未被薄化，所以在此步骤过孔32和34被切口到表面13中而未穿通微盖14。
图2B图示了制造程序的随后的步骤，其中微盖14已经被薄化从而通过微盖14的第二表面15曝露第一过孔32和第二过孔34。在微盖14被薄化到其最终尺寸之后界定第二表面15。接着在曝露的过孔32和34内形成电触头32A和34A。然后在触头32A和34A之上分别形成第一柱36和第二柱38。
可以通过任何凸块技术形成第一柱36和第二柱38。例如，柱36和38可以是倒装焊接凸块或铜柱桩。在一个实施例中，使用焊剂球将柱36和38形成为凸块。在此情况下，焊剂的半球被镀覆附装到微盖14(或到其上的触头32A和34A)，且然后熔融焊剂的球体以(在微盖14的触头32A和34A与有源器件晶片16的内侧焊盘42和44之间)进行连接。在另一个实施例中，柱36和38形成为桩。在此情况下，铜首先镀覆到一定高度。这提供了从微盖14到有源器件晶片16的一定的分离距离。
图2C图示了用于晶片封装10的制造程序的进一步步骤。在图2C中(和在图1中)，图示了器件被定向为从图2A和图2B所示的那些旋转180°。图2C图示在如何在晶片级制造晶片封装10。从图2C所示的更长的晶片可以切割出多个晶片封装(也称作“管芯”或“多个管芯”)10。例如，切割线C1-C7指示了为移除单个晶片封装10所需的局部锯口的位置。切割线C1、C2、C3、和C4用于切出单个晶片封装10。
如所示的，切割线C1和C2相对于切割线C3和C4偏移。在晶片封装10的一个实施例中，使用这些偏移的切割线使得通过局部锯口提供避开距离。换言之，在沿着切割线C1、C2、C3、和C4进行切割之后，微盖14和MEMS晶片12窄于有源器件晶片16。这样，在微盖14/MEMS晶片12与有源器件晶片16之间的避开距离使得外侧焊盘40和46是可访问的来用于将晶片封装10与外部电子器件连接。例如，可以通过导线焊接到外侧焊盘40和46进行到外侧焊盘40和46的这样的连接。
在图2A-2C所示的处理步骤中，第一柱36和第二柱38图示为形成在微盖14被薄化之后的其第二表面15上。可选地，第一柱36和第二柱38可以已经形成在有源器件晶片16的第一表面17上，该表面在有源器件晶片16和微盖14接合时面对微盖14。而且，MEMS晶片12可以在附装到有源器件晶片16之后，在沿着各个切割线切锯之前或之后被薄化。
在图1和图2中晶片封装10图示为包括其是FBAR的MEMS晶片12。具体地，图示了第一FBAR 20和第二FBAR 22。但是，本领域的技术人员将认识到可以与本发明相容地使用各种MEMS器件。而且，根据本发明，可以使用单个的FBAR或诸如表面安装声波谐振器(SMR)之类的其他MEMS器件，也可以使用多个其他MEMS器件。微盖14提供了用于密封MEMS器件同时将这些器件电耦合到诸如CMOS晶片之类的有源器件的手段。
图3图示了根据本发明其他实施例的单个集成晶片级封装50。晶片封装50包括MEMS晶片52、微盖54、和有源器件晶片56。在一个实施例中，MEMS晶片52是FBAR衬底晶片且有源器件晶片56是CMOS衬底晶片。晶片封装50将MEMS晶片52和有源器件晶片56结合为单个集成晶片封装，同时每个晶片仍然在晶片级。晶片封装接着包括外部触头(以下进一步讨论的88和89)，其可从外部访问晶片封装50，这使得晶片封装50可以电耦合到其他外部部件。
在一个实施例中，MEMS晶片52在第一表面51上包括诸如第一FBAR 60和第二FBAR 62之类的MEMS部件。单个MEMS部件、多个MEMS部件、或其他MEMS部件，例如SMR可以也设置在或可选地设置在第一表面51上。第一MEMS晶片触头64和第二MEMS晶片触头66也在第一表面51上，并分别电耦合到第一FBAR 60和第二FBAR 62。MEMS晶片52的第一表面51还包括绕第一FBAR 60和第二FBAR 62的外周延伸的MEMS晶片内焊盘68，和绕第一表面51的外周延伸的MEMS晶片外焊盘69。最后，MEMS晶片52的第一表面51包括从第一表面51延伸到第二表面53的第一MEMS晶片过孔90和第二MEMS晶片过孔92。MEMS晶片电触头90A和92A分别形成在第一过孔90和第二过孔92内并沿着第二表面53延伸。第一MEMS晶片外柱88和第二MEMS晶片外柱89分别电耦合到第一触头90A和第二触头92A。
微盖54包括第一表面55和第二表面57。第一微盖过孔74、第二微盖过孔76、第三微盖过孔78、和第四微盖过孔79从第一表面55延伸穿过微盖54到第二表面57。第一微盖电触头74A、第二微盖电触头76A、第三微盖电触头78A、和第四微盖电触头79A形成在各个触头过孔74、76、78、和79内，并接着每个沿着第二表面57延伸。
MEMS晶片52与微盖54对准并连接使得微盖54对MEMS晶片的第一FBAR 60和第二FBAR 62提供保护和密封。在一个实施例中，所提供的密封是气密密封。具体地，内密封环70在MEMS晶片52与微盖54之间绕与MEMS晶片52的内焊盘68紧邻的第一FBAR 60和第二FBAR 62延伸。这样，内密封环70围绕第一FBAR 60和第二FBAR 62。因此，在一个实施例中，内密封环70、MEMS晶片52的第一表面51、和微盖54的第一表面55的组合形成了密封室，其气密地密封第一FBAR 60和第二FBAR 62。
在一个实施例中，外密封环71在MEMS晶片52与微盖54之间绕它们的与MEMS晶片52的外焊盘69紧邻的外周延伸，提供了额外的密封。可以以现有技术中已知的各种方式与微盖54协同形成内密封环70和外密封环71。在其他实施例中，外密封环71可以不绕MEMS晶片52和微盖54的外周延伸，而是帮助将MEMS晶片52和微盖54接合。
以与本发明相容的各种方式提供通过微盖54到MEMS晶片52的电接触。例如，微盖54的第一触头74A电耦合到MEMS晶片52的第一触头90A，且微盖54的第四触头79A电耦合到MEMS晶片52的第二触头92A。也可以绕在通过触头耦合到MEMS晶片52处的过孔74、76、78、和79中的每个设置垫圈或密封。
有源器件晶片56包括承载诸如CMOS电路之类的有源器件电路的第一表面59。第一有源晶片外焊盘94和第二有源晶片外焊盘99、以及第一有源晶片内焊盘96和第二有源晶片内焊盘98与有源器件晶片56的第一表面59相邻。焊盘94至99提供到有源器件晶片56的有源器件电路的电连接。第一有源晶片外柱80和第二有源晶片外柱86以及第一有源晶片内柱82和第二有源晶片内柱84形成在有源器件晶片56的第一表面59与微盖54的第二表面57之间，且它们与内外焊盘94至99对准。
在晶片封50中，微盖54提供密封来保护MEMS晶片52，并还提供与有源器件晶片56的电连接。根据本发明，在晶片级制造晶片封装50使得当单一化晶片封装50时MEMS晶片52与有源器件晶片56已经电耦合。这样，从而免除了在单一化之后将MEMS晶片52电耦合到有源器件晶片56的步骤。
在一个实施例中，晶片封装50设置有外部电触头使得晶片封装50准备好附装到电路。可以以与本发明相容的各种方式完成这样到其他器件的附装。可以使用导线焊接来进行到封装的电接触，且在这种情况下，在外焊盘上的桩或凸块是不必要的。此外，柱88和89可以直接耦合到电路板或其他应用。其他的凸块焊接、桩焊接、和其他类型的焊接可以将晶片封装50电连接到外部元件。
可以以与本发明相容的各种方式制造晶片封装50。图4A-4C中图示了根据一个示例性制造程序的晶片封装50的制造。图4A图示了紧邻微盖54的MEMS晶片封装52。在图4A中，微盖54还未被薄化。图示了第一过孔74、第二过孔76、第三过孔78、和第四过孔79被刻蚀到微盖54的与MEMS晶片52的第一表面51相邻的第一表面55中。过孔74至79相对于MEMS晶片52对准使得可以穿过它们进行到MEMS晶片52的最终电接触。因为微盖54还未被薄化，所以在此步骤过孔74、76、78和79被切口到表面13中而未穿通微盖54。
在可选处理中，可以使用背侧过孔。在此情况下，因为从顶侧制造过孔，所以可以利用或不利用薄化。如果使用薄化，可以在刻蚀过孔之前或之后完成薄化。
图4B图示了根据一个实施例用于制造晶片封装50的制造程序的随后步骤。在图4B中，其微盖54已经被薄化而曝露第一至第四过孔74至79使得它们在微盖54的面向远离MEMS晶片52方向的第二表面57上开口。第一电触头74A、第二电触头76A、第三电触头78A、和第四电触头79A分别形成在曝露的过孔74、76、78、和79中。然后，在触头74A和79A上分别形成第一外柱80和第二外柱86，并在触头76A和78A上分别形成第一内柱82和第二内柱84。这样，进行了从MEMS晶片52穿过微盖54到内外柱80至86的电接触。
图4C图示了根据一个实施例用于晶片封装50的制造程序中的进一步步骤。如图4B所示的MEMS晶片52和微盖54在图4C中被旋转180°并与有源器件晶片56相邻放置。可选地，可以旋转有源器件晶片56。如所示的，第一外柱80和第二外柱86分别与第一外焊盘94和第二外焊盘99对准，且第一内柱82和第二内柱84分别与第一内焊盘96和第二内焊盘98对准。这样，进行了从有源器件晶片56穿过微盖54到MEMS晶片52的电连接，其全部都在晶片级别。
在进一步的制造步骤中，接着薄化MEMS晶片52，且第一MEMS晶片过孔90和第二MEMS晶片过孔92(图3中所示)通过MEMS晶片52的第二表面53增加到MEMS晶片52。此外，触头90A和92A分别增加到第一过孔90和第二过孔92中。最后，在触头90A和92A上分别制造第一外柱88和第二外柱89。
参考图3，图示了晶片封装50提供了经由第一外柱88和第二外柱89到有源器件晶片56的外部电连接。在第一外柱88处，到有源器件晶片56的电连接提供到触头90A、到触头74A、到第一外柱80、并到有源器件晶片56的第一外焊盘94。类似地，在第二外柱89处，到有源器件晶片56的电连接提供到触头92A、到触头79A、到第二外柱86、并到有源器件晶片56的第二外焊盘99。本领域的技术人员将理解的是，这些连接是说明性的并且一些实施例将包括多于两个连接。
此外，也提供了在有源器件晶片56和MEMS晶片52之间的电连接。经由有源器件晶片56上的第一内触头96、到第一内柱82、到触头76A、到接着又耦合到第一FBAR 60的触头64来设置第一接触路径。经由有源器件晶片56的第二内焊盘98、到第一内柱84、到触头78A、到耦合到第二FBAR 62的触头66来设置第二接触路径。如本领域的技术人员将认识到的，对FBAR至少需要两个连接，其并未在附图中具体图示。FBAR可以彼此连接以提供连接之一，或者可以类似于所图示的这些来提供额外的连接。当晶片封装50被组装为单个部件时，从外部触头到有源器件电路的电连接和在有源器件电路和MEMS部件之间的电连接全部都在晶片级提供。
与图1所示的晶片封装10不同，晶片封装50不需要具有避开距离来允许访问有源器件的局部锯口。取而代之的是，设置外柱88和89用于电连接到其他外部器件。可选地，可以免除外柱88和89而可以将外部连接直接进行到触头90A和92A。内柱82、84和外柱80、86如上所述作为有源晶片柱，其如图4B所示在放置在有源器件晶片56上之前形成在微盖54上。可选地，柱80至86可以形成在有源器件晶片56上，并接着可以将微盖54耦合到有源器件晶片56。
柱80至86以及柱88和89中的每个可以通过各种凸块技术形成。例如，柱80至89可以是倒装焊接凸块或铜柱桩。在一个实施例中，使用焊剂球将柱80至89形成为凸块。在此情况下，焊剂的半球被首先镀覆并附装，且然后熔融焊剂的球体以进行连接。在另一个实施例中，柱80至89形成为桩。在此情况下，铜首先镀覆到一定高度。这提供了与该表面的一定的分离距离。
图5和图6图示了根据本发明的其他实施例的单个集成晶片级封装100。图6以俯视图图示了晶片封装100，而图5图示了沿图6中的线5-5所取的剖视图。晶片封装100包括MEMS晶片102和有源器件晶片104。在图6中已经移除了有源器件晶片104使得可以观察在有源器件晶片104之下的那些物体。
MEMS晶片102具有第一表面101和第二表面103。MEMS晶片102在第一表面101上包括诸如第一FBAR 110和第二FBAR 112之类的MEMS部件。单个MEMS部件、多个MEMS部件、或其他MEMS部件，例如SMR可以也设置在或可选地设置在第一表面101上。MEMS晶片102还包括第一MEMS晶片外焊盘114和MEMS晶片外焊盘122、第一MEMS晶片内焊盘118和第二MEMS晶片内焊盘120、以及MEMS晶片环焊盘116，全部都在MEMS晶片102的第一表面101上。环焊盘116围绕第一FBAR110和第二FBAR112，如图6所示。
MEMS晶片102还包括第一MEMS晶片过孔130和第二MEMS晶片过孔132，其在MEMS晶片102的第一表面101和第二表面103之间延伸。第一MEMS晶片触头130A和第二MEMS晶片触头132A分别形成在第一过孔130和第二过孔132内，并沿着第二表面103延伸。第一MEMS晶片内焊盘135和第二MEMS晶片内焊盘137也设置在MEMS晶片102的第二表面103上。最后，第一MEMS晶片外柱134和第二MEMS晶片外柱139设置在MEMS晶片102的第二表面103上，与触头130A和132A相邻，且第一内MEMS晶片柱136和第二内MEMS晶片柱138设置在MEMS晶片102的第二表面103上，与第一内焊盘135和第二内焊盘137相邻。
有源器件晶片104包括承载诸如CMOS电路之类的有源器件电路的第一表面105。第一有源晶片外焊盘150和第二有源晶片外焊盘158、第一有源晶片内焊盘154和第二有源晶片内焊盘156以及有源晶片环焊盘152全部设置在有源器件晶片104的第一表面105上，且每个可以提供到有源器件晶片104中的有源器件电路的电连接。第一有源晶片外柱140和第二有源晶片外柱148、第一有源晶片内柱144和第二有源晶片内柱146、以及有源晶片环柱142设置在有源器件晶片104的第一表面105与MEMS晶片102的第一表面101之间。在一个实施例中，如图6所示，环柱142围绕第一FBAR 110和第二FBAR 112，并形成为与有源器件晶片104的环焊盘152和MEMS晶片102的环焊盘116相邻。第一外柱140和第二外柱148形成为与有源器件晶片104的外焊盘150和158以及MEMS晶片102的外焊盘114和112相邻。第一内柱144和第二内柱146形成为与有源器件晶片104的内焊盘154和156以及MEMS晶片102的内焊盘118和120相邻。焊连接的数量根据每个应用而不同，且所图示的这些仅意味着示例性的而不意味着以任何方式来限制。
内柱144和146以及外柱140和148提供了在有源器件晶片104和MEMS晶片102之间(在有源器件晶片104的焊盘150、154、156、和158与MEMS晶片102的焊盘114、118、120、和122之间)的电耦合。环柱142是提供绕第一FBAR 110和第二FBAR 112的密封的环状结构。在一些实施例中，环柱142也提供绕第一FBAR 110和第二FBAR 112的气密密封。在一些实施例中，环柱142也可以提供在有源器件晶片104与MEMS晶片102之间(在有源器件晶片104的焊盘152与MEMS晶片102的焊盘116之间)的电耦合。
由环柱142提供的密封是否是气密性的通常取决于MEMS器件。在MEM设备被钝化的情况下，由环柱142提供的密封不需要是气密性的。在MEMS设备是未钝化的FBAR的情况下，由环状142提供的密封将需要是气密性的。
内MEMS晶片柱136和138以及外MEMS晶片柱134和139为晶片封装100提供外部触头。这样的外部触头提供了连接到诸如电路板之类的其他外部设备的手段。第一MEMS晶片外柱134和第二MEMS晶片外柱139提供了到有源器件晶片104以及其上承载的有源器件电路的外部连接。具体地，第一外柱134耦合到触头130A、到第一外柱140、到有源器件晶片104的第一外焊盘150。这样，第一外柱134提供了到有源器件晶片104上的有源器件电路的电连接。类似地，第二外柱139耦合到触头132A、到第二外柱148、到有源器件晶片104的第二外焊盘158。本领域的技术人员将理解的是，这些连接是说明性的并且一些实施例将包括多于或少于四个连接。
第一MEMS晶片内柱136和第二MEMS晶片内柱138提供到有源器件晶片104的额外的外部连接。可选地，可以免除柱134、136、138、139的任何一个或其组合且外部连接可以直接进行到触头130A、135、137、和132A的一个或其组合。在图6中，迹线和额外的端柱(图示为虚线)被图示为提供到有源器件晶片104以及其上的有源器件电路的额外的电连接通路。
晶片封装100为承载在MEMS晶片102上的图示为第一FBAR 110和第二FBAR 112的MEMS部件提供密封。在图5所示的实施例中，密封设置在MEMS晶片102、有源器件晶片104、和环柱142之间使得不需要额外的微盖。在一个实施例中，所设置的密封是气密密封。此外，晶片封装100提供外部接头(内柱136和138以及外柱134和139)用于将外部设备电耦合到在有源器件晶片104上的有源器件电路。
在晶片封装100中，MEMS晶片102、有源器件晶片104、和环柱的组合保护了MEMS部件FBAR 110和112，并还提供了与有源器件晶片104的电连接。根据本发明，在晶片级制造晶片封装100使得得当单一化晶片封装100时MEMS晶片102和有源器件晶片104已经电耦合。这样，从而免除了在单一化之后将MEMS晶片102电耦合到有源器件晶片104的步骤。
可以以与本发明相容的各种方式制造晶片封装100。图7A至7C中图示了根据一个示例性制造程序的晶片封装100的制造。在图7A中，图示了有源器件晶片104，第一有源晶片外焊盘150和第二有源晶片外焊盘158、第一有源晶片内焊盘154和第二有源晶片内焊盘156以及有源晶片环焊盘152全部设置在有源器件晶片104的第一表面105上。此外，第一有源晶片外柱140和第二有源晶片外柱148、第一有源晶片内柱144和第二有源晶片内柱146、以及有源晶片环柱142设置在有源器件晶片104的第一表面105上的各个焊盘150至158上。
如前所述的实施例，可以通过各种凸块技术形成柱140至148中的每个。例如，它们可以是倒装焊接凸块或铜柱桩。在一个实施例中，使用焊剂球将柱140至148形成为凸块。在此情况下，焊剂的半球被首先附装并镀覆，且然后熔融焊剂的球体以进行连接。在另一个实施例中，柱140至148形成为桩。在此情况下，铜首先镀覆到一定高度。这提供了与该表面的一定的分离距离。
在图7B中，图示了MEMS晶片102，第一FBAR 110和第二FBAR112、第一MEMS晶片外焊盘114和第二MEMS晶片外焊盘122、第一MEMS晶片内焊盘118和第二MEMS晶片内焊盘120以及MEMS晶片环焊盘116全部在MEMS晶片102的第一表面101上。在此步骤，MEMS晶片102还未被薄化，且其未连接到有源器件晶片104。类似于前述实施例，柱140至148可以形成在MEMS晶片102上，而作为可选方案可以将它们形成在有源器件晶片104上。
在图7C所示的一个实施例中，在薄化MEMS晶片102之前将MEMS晶片102与有源器件晶片104连接。如以上参考图5和图6所述，为了提供在有源器件晶片104和MEMS晶片102之间的电耦合，内柱144和146与外柱140和148以及环柱142全部与有源器件晶片104的焊盘150至158以及MEMS晶片102的焊盘114至122对准。在其他实施例中，在最初选定了所期望的厚度的情况下将不需要薄化。
在随后的制造步骤中，薄化MEMS晶片102并形成第一MEMS晶片过孔130和第二MEMS晶片过孔132。在其他实施例中，可以在连接MEMS晶片102和有源器件晶片104之前薄化MEMS晶片102并形成过孔130和132。接着在第一过孔130和第二过孔132内形成第一触头130A和第二触头132A，增加第一内焊盘135和第二内焊盘137，并与触头130A和132A以及内焊盘135和137相邻地增加内外柱134至139。可以通过多种凸块或桩技术中的任何一种形成柱134至139，如形成柱140至148中的每个那样。
晶片封装100提供到有源器件晶片104的电连接，以及在MEMS晶片102和有源器件晶片104之间的电连接。经由耦合到触头130A的第一外柱134、到第一外柱140、到有源器件晶片104的第一外焊盘150来设置第一接触路径。经由耦合到触头132A的第二外柱139、到第二外柱148、到有源器件晶片104的第二外焊盘158来设置第二接触路径。当晶片封装100被组装为单个部件时，从外部触头到有源器件电路的电连接和在有源器件电路和MEMS部件之间的电连接全部都在晶片级提供。
本领域的技术人员也将明白，也可以不在MEMS晶片102中而在有源器件晶片104中置入过孔，或者除了在MEMS晶片102中外还在有源器件晶片104中置入过孔。这样，可以通过MEMS晶片102和/或有源器件晶片104中的过孔实现到外部部件的连接。
与前述晶片封装10和50不同，晶片封装100不需要微盖晶片。其还设置了外部触头而无需具有避开距离的局部锯口来允许访问有源器件。为电连接到其他外部器件设置了外部触头内外柱134至139。
虽然此处已经图示并描述了具体实施例，但本领域的普通技术人员应该理解到的是多个变化和/或等价实施方式可以代替所示和所述的具体实施例而不偏离本发明的范围。此申请意图覆盖此处讨论的具体实施例的任何改造或变化。因此，意味着本发明仅由权利要求和其等价物所限。
本发明申请涉及与本申请同日提交，标题为微机电系统和有源电路的集成的共同转让的发明专利申请号No.11/012,574，代理卷号no.10041008-1，其通过引用包含于此。

Claims (25)

1.一种单个集成晶片封装，包括：
具有第一表面的微机电系统晶片，所述微机电系统晶片在其第一表面上具有至少一个微机电系统部件；
具有第一表面的有源器件晶片，所述有源器件晶片在其第一表面上具有有源器件电路；
与所述微机电系统晶片的所述第一表面相邻使得绕所述微机电系统部件形成密封的密封环；和
到所述晶片封装的外部触头，其中所述外部触头可从外部访问所述晶片封装且电耦合到所述有源器件晶片的所述有源器件电路。
2.如权利要求1所述的晶片封装，其中绕所述微机电系统部件形成的所述密封包括气密密封。
3.如权利要求1所述的晶片封装，其中所述微机电系统部件是下述群组中的一个，所述群组包括薄膜体声波谐振器和固态安装声波谐振器。
4.如权利要求1所述的晶片封装，其中所述密封环也与所述有源器件晶片的所述第一表面相邻使得由所述密封环、所述有源器件晶片的所述第一表面、和所述微机电系统晶片的所述第一表面的组合形成所述密封。
5.如权利要求4所述的晶片封装，其中所述形成的密封是气密密封。
6.如权利要求4所述的晶片封装，其中在所述微机电系统晶片和所述有源器件晶片之间的所述密封环是围绕所述微机电部件并将所述晶片耦合在一起使得它们形成单个集成部件的铜柱环。
7.如权利要求1所述的晶片封装，其中所述微机电系统晶片还包括至少一个过孔，通过所述过孔进行在所述外部触头与包括所述有源器件电路和所述微机电系统部件的群组中的至少一个之间的电连接。
8.如权利要求1所述的晶片封装，其中所述有源器件晶片还包括至少一个过孔，通过所述过孔进行在所述外部触头与包括所述有源器件电路和所述微机电系统部件的群组中的至少一个之间的电连接。
9.如权利要求7所述的晶片封装，其中在所述微机电系统晶片和所述有源器件晶片之间形成至少一个柱，所述柱与所述过孔对准使得所述柱帮助在所述有源器件电路和所述外部触头之间的电连接。
10.如权利要求8所述的晶片封装，其中在所述微机电系统晶片和所述有源器件晶片之间形成至少一个柱，所述柱与所述过孔对准使得所述柱帮助在所述微机电系统晶片和所述外部触头之间的电连接。
11.如权利要求1所述的晶片封装，还包括耦合在所述微机电系统晶片和所述有源器件晶片之间的微盖晶片，且其中所述密封环夹在所述微机电系统晶片和所述微盖晶片之间从而提供绕所述微机电系统部件的密封。
12.如权利要求11所述的晶片封装，其中绕所述微机电系统部件形成的所述密封包括气密密封。
13.如权利要求11所述的晶片封装，其中所述微机电系统晶片还包括至少一个过孔，通过所述过孔进行在外部附件与包括所述有源器件电路和所述微机电系统部件的群组中的至少一个之间的电连接。
14.如权利要求11所述的晶片封装，其中所述有源器件晶片还包括至少一个过孔，通过所述过孔进行在外部附件与包括所述有源器件电路和所述微机电系统部件的群组中的至少一个之间的电连接。
15.一种用于制造晶片封装的方法，包括：
提供具有第一表面的有源器件晶片，所述有源器件晶片在其第一表面上具有有源器件电路；
提供具有第一表面的微机电系统晶片，所述微机电系统晶片在其第一表面上具有至少一个微机电系统部件；
与所述微机电系统晶片相邻地附装微盖和密封环，使得所述密封环和所述微盖密封所述微机电系统部件；
在所述微盖中形成过孔；
在所述过孔内制造电耦合到所述微机电系统晶片的触头；
在所述有源器件晶片和所述触头之间制造柱从而电耦合所述有源器件晶片和所述微机电系统晶片；和
对所述晶片封装设置可从外部访问所述晶片封装的电接触点。
16.如权利要求15所述的方法，其中绕所述微机电系统部件形成的所述密封包括气密密封。
17.如权利要求15所述的方法，其中所述微机电系统部件是下述群组中的一个，所述群组包括薄膜体声波谐振器和固态安装声波谐振器。
18.如权利要求15所述的方法，还包括在所述有源器件晶片中形成过孔以将电连接提供到包括所述有源器件电路和所述微机电系统部件的群组中的至少一个。
19.如权利要求18所述的方法，还包括在所述有源器件晶片的所述过孔内制造触头，所述触头电耦合到包括所述有源器件电路和所述微机电系统部件的群组中的至少一个。
20.如权利要求19所述的方法，还包括在所述微机电系统晶片中形成过孔以将电连接提供到包括所述有源器件电路和所述微机电系统部件的群组中的至少一个。
21.一种用于制造晶片封装的方法，包括：
提供具有第一表面的有源器件晶片，所述有源器件晶片在其第一表面上具有有源器件电路；
将微机电系统晶片以其第一表面与所述有源器件晶片的所述第一表面相邻地放置，所述微机电系统晶片在其第一表面上具有至少一个微机电系统部件；
在所述有源器件晶片和所述微机电系统晶片之间制造柱从而电耦合所述有源器件电路和所述微机电系统晶片，包括在所述有源器件晶片和所述微机电系统晶片之间形成围绕并从而密封所述微机电系统部件的环柱；
在包括所述微机电系统晶片和所述有源器件晶片的群组中的至少一个中形成至少一个过孔；
在所述过孔内制造电耦合到所述柱中的至少一个的过孔触头；和
设置耦合到所述过孔触头的外部触头，其中所述外部触头可从外部访问所述晶片封装并电耦合到包括所述微机电系统部件和所述有源器件电路的群组中的至少一个。
22.如权利要求21所述的方法，环柱不是完整连续的而使得其包括间隙。
23.如权利要求22所述的方法，其中所述微机电系统部件是钝化的。
24.如权利要求21所述的方法，其中绕所述微机电系统部件形成的所述密封包括气密密封。
25.如权利要求21所述的方法，其中所述微机电系统部件是下述群组中的一个，所述群组包括薄膜体声波谐振器和固态安装声波谐振器。
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