CN1794572A - 用选择性金属蚀刻提高声共振器的性能 - Google Patents
用选择性金属蚀刻提高声共振器的性能 Download PDFInfo
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Abstract
一种声共振器，包括衬底、第一电极、压电材料层和第二电极。衬底具有第一表面并且第一电极与该表面相邻。压电材料层与第一电极相邻，第二电极与压电材料层相邻，且位于第一平面内并具有边缘。压电材料层具有相邻于第二电极边缘的凹槽结构。
Description
相关申请的交叉引用
本申请与名为“ACOUSTIC RESONATOR PERFORMANCEENHANCEMENT USING RECESSED REGION”的美国专利申请相关，该申请的申请号为10/867,540，申请日为2004年6月14日，代理文件编号为10040525-1，该申请与本申请被共同转让给相同的受让人。
背景技术
对电子设备降低成本和减小尺寸的需求要求更小的单个滤波元件。薄膜体声共振器(Thin-Film Bulk Acoustic Resonators，FBAR)和多层薄膜体声波共振器(Stacked Thin-Film Bulk Acoustic Resonators，SBAR)代表了一类符合上述要求的有潜力的滤波元件。这些滤波器可以共同称之为FBAR。FBAR是利用在薄膜压电(PZ)材料中的体纵向声波的声共振器。通常，FBAR包括夹在两个金属电极之间的PZ材料。PZ材料和电极的组合通过支承其周边而悬挂于空中或者置于声反射镜上。
当两个电极之间产生电场时，PZ材料以声波的形式将部分电能转化为机械能。声波沿电场方向传播并且在某些频率下在电极-空气或者电极-声反射镜界面上反射，这些频率中包括共振频率。在共振频率下，此器件可以用作电子共振器。可以将多个FBAR进行组合，使其中的每一个作为RF滤波器的元件。
理想情况下，滤波元件中的共振能量被完全“俘获”在共振器中。然而，实际上却存在着频散模式。这些模式可以导致滤波器的品质因子(Q)有所降低。
由于上述及其它的原因，存在着对本发明的需求。
发明内容
本发明的一个方面提供了一种声共振器，该声共振器包括衬底(substrate)、第一电极、压电材料层和第二电极。衬底具有第一表面并且第一电极与该表面相邻。压电材料层与第一电极相邻。第二电极与压电材料层相邻，位于第一平面中并具有边缘。压电材料层具有与第二电极边缘相邻的凹槽结构。
附图说明
图1是FBAR的俯视图。
图2是FBAR的剖视图。
图3是本发明的一个实施例中的FBAR的剖视图。
图4是图3所示FBAR的一个实施例的俯视图。
图5是图3所示FBAR的另一个实施例的俯视图。
图6是两个在史密斯圆图(Smith chart)上绘出的示意性FBAR的品质因子圆(Q Circle)。
图7是本发明的一个实施例中的FBAR的剖视图。
图8是本发明的另一个实施例中的FBAR的剖视图。
图9是本发明的另一个实施例中的FBAR的剖视图。
图10是本发明的另一个实施例中的FBAR的剖视图。
具体实施方式
下面的详细描述以附图(附图作为其中的一部分)为参考，体现了本发明能够实现的具体实施例。鉴于此，方向术语，例如“顶”、“底”、“正”、“背”、“前”和“后”等以被描述的图的取向为参考。由于本发明实施例的组件能以不同方向放置，为了便于描述而使用了方向术语，但这些术语不是限制性的。应该理解，在不脱离本发明范围的前提下，可以使用其它实施例并作结构或逻辑上的修改。因此，下面的详细描述没有限制意图，而且本发明的范围由所附的权利要求书来确定。
图1和图2分别为FBAR 10的俯视图和剖视图。FBAR 10包括衬底12、凹腔14、第一电极16、压电(PZ)层18、第二电极20和钝化层22。在图1中，除去了钝化层22，而且第一电极16和凹腔14并不可见。第二电极20具有如图1所示的五边形边界。通常，触点连接在第一电极16和第二电极20上。这些触点使第一电极16和第二电极20易于连接到电压源上。俯视图1和剖视图2还示出了第二电极20边界上的两个位置：第一边缘20a和第二边缘20b。
第一电极16、PZ层18、第二电极20和钝化层22共同构成FBAR薄膜23。FBAR薄膜23与衬底12相邻并悬于凹腔14之上，从而提供了电极-空气界面。在一个实施例中，通过蚀刻掉一部分衬底12而形成凹腔14。凹腔14足够深以致在FBAR薄膜23下面形成足够的电极-空气界面。
在另一个实施例中，FBAR薄膜23可以与衬底12内部形成的声反射镜(图1和图2中未显示)相邻。这样就形成了电极-声反射镜界面。如此形成的共振器为固态装配共振器(SMR)。
在一个实施例中，衬底12由硅(Si)制成且PZ层18由氮化铝(AlN)制成。或者，PZ层18也可采用其它压电材料。在一个实施例中，第一电极16和第二电极20可由钼(Mo)制成。或者，电极也可用其它材料制作。在一个实施例中，触点由金(Au)制成。或者，触点也可用其它材料制作。
图1和图2所示的FBAR10被配置成利用在PZ层内传播的体压缩(bulk compression)或陡峭(sheer)声波。当通过外加电压在第一电极16和第二电极20之间形成电场时，PZ层18的压电材料以声波的形式将部分电能转化为机械能。如此设计使FBAR 10呈现了频散模式，导致其品质因子(Q)下降。
图3是本发明的一个实施例中的FBAR 40的剖视图。FBAR 40包括衬底42、凹腔44、第一电极46、压电(PZ)层48、第二电极50和钝化层52。通常，触点(图3中未显示)连接在第一电极46和第二电极50上。这些触点使第一电极46和第二电极50易于连接到电压源上。第一电极46、PZ层48、第二电极50和钝化层52共同构成FBAR薄膜53，如前所述，该薄膜可置于凹腔44之上或者声反射镜之上。FBAR薄膜53与衬底42相邻并悬于凹腔44之上，从而提供电极-空气界面。如上述实施例，使用根据本发明的SMR设计也可得到电极-声反射镜界面。
第二电极50和钝化层52可以具有各种边界形状。例如，类似于上述FBAR 10，每个边界的形状可以为五边形。也可以是各种多边形、圆形或者各种不规则形状。剖视图3示出了第二电极50边界上的两个位置：第一边缘50a和第二边缘50b。在一个实施例中，钝化层52的边缘通常与第二电极50的边缘在竖直方向上对齐，如图3中的FBAR 40所示。
在图3所示的FBAR 40中，凹槽60是在PZ层48上进行选择性蚀刻而形成并且与第二电极50的第一边缘50a和第二边50边缘相邻。当第二电极50的第一边缘50a和第二边缘50b被看作是竖直(如图3所示取向)方向时，在水平方向，凹槽60位于第二电极50的第一边缘50a和第二边缘50b的“外部”。(与此相比，在水平方向，凹腔44可被看作位于第二电极50的第一边缘50a和第二边缘50b的“内部”。)
凹槽60提高了FBAR 40的性能，因而改善了插入损耗并提高了FBAR 40的共振器品质因子Q。FBAR 40的总品质因子Q成比例地依赖于一个称为Rp的电阻参数。对于FBAR 40，Rp可以通过凹槽60得以改善。
通过外加电压在第一电极46和第二电极50之间形成电场，PZ层48的压电材料以声波的形式将部分电能转化为机械能。FBAR 40中的某些声波为任意模式的纵向声波，而其余声波为压缩或者陡峭(sheer)模式的横向声波。作为期望的共振器模式，FBAR 40被设计成利用整体压缩或者陡峭声波在PZ层48内纵向传播。然而，提供了凹槽60的FBAR 40减少或者抑制了能量损耗，因此提高了滤波器的Q。凹槽60也有利于抑制滤波器的噪声。
凹槽60在PZ层48中的深度的量级可为几百至几千埃，其宽度量级可以为几分之一微米到几微米或者更大，直至PZ层48延展出第二电极50的第一边缘50a和第二边缘50b的宽度。在一个实施例中，选择性蚀刻PZ层48以形成凹槽60，其宽度为几分之一微米至几微米至数十微米，深度为数百至数千埃。在一个实施例中，凹槽60相对于第二电极50的第一边缘50a和第二边缘50b偏移几分之一微米至几微米。换言之，凹槽60在第二电极50的第一边缘50a和第二边缘50b的外侧几分之一微米至几微米。
图4和图5为根据本发明另一个实施例的图3所示的FBAR 40的俯视图。如图4和图5所示，FBAR 40包括衬底42、压电(PZ)层48、第二电极50。在图4和图5中，除去了钝化层52，并且第一电极46和凹腔44也不可见。通常，触点(图中未显示)连接到第一电极46和第二电极50上。
在图4和图5中，凹槽60与第二电极50的边界相邻。图中，第二电极50的边界通常是具有五条较直的边缘的五边形，但是也可以是多边形、圆形或者任何其它光滑或不规则形状。在图4中，凹槽60相邻于第二电极50外测并且沿着该五边形电极五条边缘中的四条延展。由于触点通常附着于该电极(标示为50)的第五边缘，凹槽60并未沿该边延展。图5示出了FBAR 40的另一个实施例，其中凹槽60相邻于第二电极50并沿着该五边形电极五条边缘中的两条延展。
本领域的技术人员能够理解，本发明容许提供与第二电极50边缘相邻的任何其它凹槽60。如上所述，凹槽60可以沿着第二电极50的某些或者所有的边缘连续延展，也可以含有不沿边缘连续延展的较小的段，而且凹槽60可以采用其它形状和结构，特别是当第二电极50为不同于五边形的其它形状时。
图6是两个示意性的FBAR的Q圆的史密斯圆图，表明在其中一个FBAR中改善了Rp从而提高了Q。众所周知，史密斯圆图是复数阻抗的极坐标图(以下用于显示s11和s22散射参数的测量)。此s11和s22散射参数表示反射波和前进波复振幅的比率。借助史密斯圆图可将反射系数转换为阻抗，并且它可将局部阻抗映射至单位圆中。
图6所示的Q圆表明了FBAR 40的性能有所提高。图6示出了示意性的蚀刻装置的S参数测量，例如具有凹槽60的FBAR40的测量结果为凹槽60宽度为14.5μm、深度为3000并与第二电极50相距0.5μm。如图所示，蚀刻装置(虚线标示的S11)与对比装置(实线标示的S22)相比，Rp明显改善。
一般地，穿过单位圆的水平轴表示真实阻抗，该轴上方区域表示感抗、下方区域表示容抗。史密斯圆图的左部零电抗表示串联共振频率(fs)并且出现在Q圆与史密斯圆图左侧实轴的交叉位置。图的左部还表明了电阻参数Rs。图右部零电抗表示并联共振频率(fp)并且出现在Q圆与史密斯圆图右侧实轴的交叉位置。图的右部还表明了电阻参数Rp。在史密斯圆图上，FBAR滤波器的特性图离史密斯圆图边界越近，则该FBAR的Q越高。而且，曲线越光滑，则FBAR的噪声越低。
图6中，滤波器FBAR 40的性能以虚线Q圆s11表示，而无凹槽的现有技术FBAR的性能以实线Q圆s22表示。显然，在电阻Rp附近，FBAR40的品质得以提高。FBAR 40，如Q圆s11所示，更接近于圆并且是低噪声和低损耗设备的代表，用于滤波器时可以提高FBAR 40的性能。
图7是本发明另一个实施例所述的FBAR 40的剖视图。FBAR 40基本上与图3所示相同，其包括衬底42、凹腔44、第一电极46、压电(PZ)层48、第二电极50和钝化层52。图中还示出了第二电极边界的第一边缘50a和第二边缘50b。此外，图7所示的FBAR 40具有在PZ层48表面形成的凹槽60，但是该表面与图3中形成凹槽的表面相对。在描述图3中的FBAR40时，凹槽60是在PZ层48的“顶”面，然而当描述图7中的FBAR 40时，凹槽60是在PZ层48的“底”面。与描述图3的凹槽60一样，图7中的凹槽60也是在第二电极50的第一边缘50a和第二边缘50b的外部。图7所示FBAR 40的性能可以与前述图3中的FBAR 40相同。在PZ层48“底”面上的凹槽60可以用本领域技术人员已知的各种方法获得，其中包括但不限于，牺牲材料的释放。
图8是本发明另一个实施例所述的FBAR 40的剖视图。FBAR 40基本上与图3所示相同，其包括衬底42、凹腔44、第一电极46、压电(PZ)层48、第二电极50和钝化层52。此外，图8所示FBAR 40还包括填入图3所示凹槽60的填充材料61。填入凹槽60的填充材料61可以进一步提高FBAR 40的性能，从而改善其插入损耗并提高共振器品质因子Q。
在一个实施例中，填充材料61与第二电极50所用材料相同。此时，填充材料61会具有与PZ层48剩余材料(如AlN)不同的频散特性。加入频散特性不同的材料可以改善FBAR 40的插入损耗和提高振器品质因子Q。例如，填充材料可以如第一电极46和第二电极50一样由Mo制成，或着由金属例如Pt、W、Cu、Al、Au或Ag制成。在另一个实施例中，填充材料61也可由其它材料制成，例如聚酰亚胺、BCB、SiO2、Si3N4或其它电介质，AlN、ZnO、LiNbO3、PZT、LiTaO3、Al2O3或其它压电材料。
图9示出了本发明另一个实施例所述的FBAR 70。FBAR 70包括衬底72、凹腔74、第一电极76、压电(PZ)层78、第二电极80和钝化层82。通常，触点(图9中未显示)连接到第一电极76和第二电极80上。触点使第一电极76和第二电极80易于连接到电压源上。第一电极76、压电(PZ)层78、第二电极80和钝化层82共同形成FBAR薄膜83，如前所述，该薄膜可置于凹腔74之上或者声反射镜之上。FBAR薄膜83与衬底72相邻并悬于凹腔74之上从而提供电极-空气界面。如前面的实施例，使用根据本发明的SMR设计也可得到电极-声反射镜界面。
第二电极80的第一边缘80a和第二边缘80b在水平方向上与钝化层82的边缘对齐。与这些边缘相邻，在钝化层82内形成凹槽90。如同前述关于FBAR 40的凹槽60，凹槽90提高了FBAR 70的性能，使其插入损耗改善及共振器品质因子Q提高。
图10是本发明另一个实施例所述的FBAR 70的剖视图。FBAR 70基本上与图9所示相同，其包括衬底72、凹腔74、第一电极76、压电(PZ)层78、第二电极80和钝化层82。此外，图10所示FBAR 70还包括填入图9所示凹槽90的填充材料91。填入凹槽90的填充材料91可以进一步提高FBAR 70的性能，使其插入损耗改善及共振器品质因子Q提高。此外，填入钝化层82上凹槽90内的填充材料91影响FBAR 70局部区域的共振器质量负载。这进而改变了该局部区域的共振行为。器件的总性能随着填充材料的尺寸和量而改变。
在一个实施例中，填充材料91与第二电极80所用材料相同。此时，填充材料91会具有与PZ层78剩余材料(如AlN)不同的频散特性。加入频散特性不同的材料可以改善FBAR 70的插入损耗和提高振器品质因子Q。例如，填充材料可以如第一电极76和第二电极80一样由Mo制成，或着由金属例如Pt、W、Cu、Al、Au或Ag制成。在另一个实施例中，填充材料91也可由其它材料制成，例如聚酰亚胺、BCB、SiO2、Si3N4或其它电介质，AlN、ZnO、LiNbO3、PZT、LiTaO3、Al2O3或其它压电材料。
可以通过与本发明相容的各种方法制造FBAR 40和FBAR 70。在一个实施例中，FBAR 40或者FBAR 70由规则场蚀刻(regular field etch)步骤的标准流程制造，即先将FBAR覆盖掩模以形成蚀刻结构，再进行蚀刻，然后将抗蚀掩模剥离从而完成规则场蚀刻。在此，场蚀刻指的是主压电层的蚀刻。
在另一个实施例中，FBAR 40或者FBAR 70由规则场蚀刻步骤的标准流程制造，即先将FBAR覆盖掩模以形成蚀刻结构，然后进行蚀刻，再将抗蚀掩模剥离。接着放上可剥离掩模(lift-off mask)，将填充材料沉积在蚀刻结构中，再将该掩模剥离从而完成规则场蚀刻。
在另一个实施例中，FBAR 40或者FBAR 70由规则场蚀刻步骤的标准流程制造，即先将FBAR覆盖掩模以形成蚀刻结构，然后进行蚀刻，再将抗蚀掩模剥离。接着将填充材料沉积在蚀刻结构中，放置对填充材料进行蚀刻的掩模，然后蚀刻填充材料，剥离蚀刻掩模从而完成规则场蚀刻。
FBAR 70的凹槽可用蚀刻步骤制作，但也可以通过剥离法制成。另外，在某些情况下，FBAR 70的凹槽可在场蚀刻之前形成。
虽然在此阐明和描述了具体实施例，但是本领域的普通技术人员应该认识到，在不脱离本发明范围的情况下，还存在各种替代的或等价的实施方式可以代替上述具体实施例。本申请旨在覆盖所述具体实施例的任何变通或变异形式。因此，本发明仅由权利要求及其等价形式所限制。
Claims (23)
1.一种声共振器，包括：
衬底；
与衬底相邻的第一电极；
与第一电极相邻的压电层，所述压电层包括凹槽结构；和
与压电层相邻的第二电极，所述第二电极具有边缘。
2.如权利要求1所述的声共振器，其中衬底内形成一凹腔，并且第一电极跨越该凹腔。
3.如权利要求1所述的声共振器，其中衬底内形成一声反射镜，并且第一电极跨越该声反射镜。
4.如权利要求1所述的声共振器，还包括与第二电极相邻的钝化层，该钝化层位于通常平行于第一平面的第二平面上，并具有边缘。
5.如权利要求1所述的声共振器，其中压电层的凹槽结构位于第二电极边缘外部。
6.如权利要求1所述的声共振器，还包括压电层的凹槽结构内的填充材料。
7.如权利要求6所述的声共振器，其中第二电极包含与凹槽结构内的填充材料相同的材料。
8.如权利要求6所述的声共振器，其中填充材料选自电介质、金属、压电材料、Mo、Pt、Al、Cu、W、Au、Ag、聚酰亚胺、BCB、SiO2、Si3N4、AlN、ZnO、LiNbO3、PZT、LiTaO3和Al2O3。
9.如权利要求5所述的声共振器，其中凹槽结构环绕着第二电极边界的主要部分延展。
10.如权利要求1所述的声共振器，其中压电层内的凹槽结构的深度为数百至数千埃数量级，宽度为几分之一微米到几微米数量级。
11.如权利要求5所述的声共振器，其中凹槽结构与第二电极边缘相距零至数十微米。
12.一种声共振器，包括：
具有第一表面的衬底；
与衬底第一表面相邻的第一电极；
与第一电极相邻的压电材料层；
与压电材料层相邻的第二电极，所述第二电极位于第一平面内并具有边缘；和
与第二电极相邻的钝化层，所述钝化层位于通常平行于第一平面的第二平面内，并具有边缘；
其中所述压电材料层具有与第二电极边缘相邻的凹槽结构。
13.如权利要求12所述的声共振器，其中衬底的第一表面上形成一凹腔，并且第一电极跨越该凹腔。
14.如权利要求12所述的声共振器，其中衬底的第一表面上形成一声反射镜，并且第一电极跨越该声反射镜。
15.如权利要求12所述的声共振器，还包括压电材料层的凹槽结构内的填充材料。
16.如权利要求15所述的声共振器，其中第二电极包含与凹槽结构内的填充材料相同的材料。
17.如权利要求15所述的声共振器，其中填充材料选自电介质、金属、压电材料、Mo、Pt、Al、Cu、W、Au、Ag、聚酰亚胺、BCB、SiO2、Si3N4、AlN、ZnO、LiNbO3、PZT、LiTaO3和Al2O3。
18.如权利要求12所述的声共振器，其中压电层的凹槽结构位于第二电极边缘外部。
19.一种声共振器，包括：
衬底；
与衬底相邻的第一电极；
与第一电极相邻的压电材料层；
与压电材料层相邻的第二电极；
与第二电极相邻的钝化层，所述钝化层包含凹槽结构；和
所述钝化层的凹槽结构内的填充材料。
20.如权利要求19所述的声共振器，其中第二电极包含与凹槽结构内的填充材料相同的材料。
21.如权利要求19所述的声共振器，其中填充材料选自电介质、金属、压电材料、Mo、Pt、Al、Cu、W、Au、Ag、聚酰亚胺、BCB、SiO2、Si3N4、AlN、ZnO、LiNbO3、PZT、LiTaO3和Al2O3。
22.如权利要求19所述的声共振器，其中钝化层内的凹槽结构的深度为十至数千埃数量级，宽度为几分之一微米至几微米数量级。
23.如权利要求19所述的声共振器，其中凹槽结构环绕着钝化层边界的主要部分延展。
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| US11/021,085 US7791434B2 (en) | 2004-12-22 | 2004-12-22 | Acoustic resonator performance enhancement using selective metal etch and having a trench in the piezoelectric |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN1794572B (zh) | 2012-05-09 |
| US20060132262A1 (en) | 2006-06-22 |
| GB2424775B (en) | 2009-05-13 |
| GB0525884D0 (en) | 2006-02-01 |
| US8188810B2 (en) | 2012-05-29 |
| GB2424775A (en) | 2006-10-04 |
| US20100277257A1 (en) | 2010-11-04 |
| US7791434B2 (en) | 2010-09-07 |
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