CN1802807A - A light source of lasing that is wavelength locked by an injected light signal - Google Patents
A light source of lasing that is wavelength locked by an injected light signal Download PDFInfo
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- CN1802807A CN1802807A CNA038268272A CN03826827A CN1802807A CN 1802807 A CN1802807 A CN 1802807A CN A038268272 A CNA038268272 A CN A038268272A CN 03826827 A CN03826827 A CN 03826827A CN 1802807 A CN1802807 A CN 1802807A
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04J—MULTIPLEX COMMUNICATION
- H04J14/00—Optical multiplex systems
- H04J14/02—Wavelength-division multiplex systems
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/25—Arrangements specific to fibre transmission
- H04B10/2587—Arrangements specific to fibre transmission using a single light source for multiple stations
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/50—Transmitters
- H04B10/501—Structural aspects
- H04B10/506—Multiwavelength transmitters
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04J—MULTIPLEX COMMUNICATION
- H04J14/00—Optical multiplex systems
- H04J14/02—Wavelength-division multiplex systems
- H04J14/0227—Operation, administration, maintenance or provisioning [OAMP] of WDM networks, e.g. media access, routing or wavelength allocation
- H04J14/0241—Wavelength allocation for communications one-to-one, e.g. unicasting wavelengths
- H04J14/0242—Wavelength allocation for communications one-to-one, e.g. unicasting wavelengths in WDM-PON
- H04J14/0245—Wavelength allocation for communications one-to-one, e.g. unicasting wavelengths in WDM-PON for downstream transmission, e.g. optical line terminal [OLT] to ONU
- H04J14/0246—Wavelength allocation for communications one-to-one, e.g. unicasting wavelengths in WDM-PON for downstream transmission, e.g. optical line terminal [OLT] to ONU using one wavelength per ONU
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04J—MULTIPLEX COMMUNICATION
- H04J14/00—Optical multiplex systems
- H04J14/02—Wavelength-division multiplex systems
- H04J14/0227—Operation, administration, maintenance or provisioning [OAMP] of WDM networks, e.g. media access, routing or wavelength allocation
- H04J14/0241—Wavelength allocation for communications one-to-one, e.g. unicasting wavelengths
- H04J14/0242—Wavelength allocation for communications one-to-one, e.g. unicasting wavelengths in WDM-PON
- H04J14/0249—Wavelength allocation for communications one-to-one, e.g. unicasting wavelengths in WDM-PON for upstream transmission, e.g. ONU-to-OLT or ONU-to-ONU
- H04J14/025—Wavelength allocation for communications one-to-one, e.g. unicasting wavelengths in WDM-PON for upstream transmission, e.g. ONU-to-OLT or ONU-to-ONU using one wavelength per ONU, e.g. for transmissions from-ONU-to-OLT or from-ONU-to-ONU
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04J—MULTIPLEX COMMUNICATION
- H04J14/00—Optical multiplex systems
- H04J14/02—Wavelength-division multiplex systems
- H04J14/0278—WDM optical network architectures
- H04J14/0282—WDM tree architectures
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04J—MULTIPLEX COMMUNICATION
- H04J14/00—Optical multiplex systems
- H04J14/02—Wavelength-division multiplex systems
- H04J14/0226—Fixed carrier allocation, e.g. according to service
Abstract
Various methods, systems, and apparatuses are described in which a light source (101) capable of lasing is wavelength locked by an injected light signal. The light source (101) capable of lasing, such as a Fabry-Perot laser diode, may have antireflective coating on one or more facets of the light source (101) capable of lasing. The light source (101) capable of lasing receives a spectral slice of a light signal from a broadband light source (113) to wavelength lock the output wavelength of the light source (101) capable of lasing within the bandwidth of the injected light signal. A current pump (141) may bias the light source (101) capable of lasing to operate as a reflective regenerate semiconductor optical amplifier so that the injected light is reflected back out a front facet after being amplified and wavelength locked. The current pump (141) may also bias the light source (101) capable of lasing such that the externally injected narrow-band light signal into the light source (101) capable of lasing suppresses the lasing modes outside of the bandwidth of injected incoherent light.
Description
Technical field
Embodiments of the invention relate to Wave division multiplexing passive optical network.More particularly, embodiments of the invention relate to by injecting the light source that can launch laser that light signal carries out wavelength locking.
Background technology
Has accurate wavelength alignment the signal wavelength of the equipment of some Wave division multiplexing passive optical network (WDM PON) need be from the reflector of central office to the remote station that signal is distributed to the subscriber.In EPON, the distant-end node that comprises the signal discharge device is usually located at the open air without any power supply.The transport tape of the wavelength of outdoor signal discharge device can change according to the variation of external temperature.In this signal, introduced extra insertion loss at the operative wavelength of the equipment of distribute signals and the wavelength misalignment between institute's transmission signals.
The feedback laser diode (DFB LD) that is to use narrow linewidth to distribute the minimized a kind of possible method of this misalignment satisfies the wavelength alignment condition thereby always drop on basically as this laser diode of optical transmitting set within the skew bandwidth of multiplexer.But, so because each solution that is not a kind of economy by the higher this arrangement of price of accurately stable DFB LD.
Some PONS also uses the optical transmitting set that has high bit rate and be used to support the suitable amount of gain of high bit rate.Some EPON can use broad-band illumination diode (LED) as optical transmitting set.But the modulation bandwidth of LED may be narrower, thereby feasible being difficult to sends data with high bit rate.And, owing to export, be difficult in EPON, grow Distance Transmission with LED from the relevant weak power of LED.
Carried out some signal has been injected into trial in the laser.But the standard laser chip length about 300 microns may not produce enough gains, and this is owing to do not have overlapping between the chamber mould (cavity mode) of the bandwidth of injecting signal and laser.And when considering manufacturing tolerance and temperature drift, the laser of some standard can not produce suitable gain to support enough signal qualitys on operational frequency range.
Summary of the invention
The invention describes diverse ways, system and equipment, wherein can launch the light source of laser and carry out wavelength locking by injecting light signal.On one or more end faces of the light source that can launch laser, has antireflecting coating such as fabry-Perot laser diode light source (Fabry-Perot laserdiode, FP LD), that can launch laser.Can launch the spectral slice of the light source of laser, thereby the output wavelength wavelength locking of light source that can launch laser is in injecting the bandwidth of light signal from the wideband light source receiving optical signals.Current pump can be setovered the light source that can launch laser with as reflective regenerate semiconductor optical amplifier operation, thereby after light amplification of will be injected and wavelength locking it is reflected back and launch from front end face.Current pump can also be setovered and can be launched the light source of laser, makes Laser emission pattern outside the outside is injected into the bandwidth that narrowband optical signal the light source that can launch laser suppresses the incoherent light that injects.
By accompanying drawing and following detailed description, other characteristics of the present invention and advantage will become obvious.
Description of drawings
Illustrate that by example but the present invention the present invention is not limited to the legend in the accompanying drawing, wherein in the accompanying drawings, identical Reference numeral indication components identical, wherein:
Fig. 1 shows use by injecting the block diagram of embodiment of Wave division multiplexing passive optical network that light signal carries out the optical transmitting set of wavelength locking;
Fig. 2 shows the block diagram of the embodiment with light source one or more end faces and chip of laser, that can launch laser;
Fig. 3 shows the embodiment for the light source that can launch laser, injects the schematic diagram of the input power spectrum density relative wavelength of light signal;
Fig. 4 shows the embodiment for the light source that can launch laser, the schematic diagram of power relative wavelength before injecting light signal and after injecting light signal; With
Fig. 5 a and 5b show the embodiment for the light source that can launch laser, such as the gain shape of light source FPLD, that can the launch laser schematic diagram with respect to wavelength.
Specific embodiment
Below the Different Light that can launch laser will be described.For an embodiment, on one or more end faces of fabry-Perot laser diode, has antireflecting coating such as light source fabry-Perot laser diode, that can launch laser.Fabry-Perot laser diode is from certain spectral slice of wideband light source receiving optical signals, so that the output wavelength wavelength locking of fabry-Perot laser diode is arrived within the bandwidth of injecting light signal.Current pump is setovered fabry-Perot laser diode, and with as reflective regenerate semiconductor optical amplifier operation, thereby the light that is injected is reflected back after amplifying and launches from front end face.This regenerative amplification process makes effectively with the injection spectral slice of fabry-Perot laser diode wavelength locking to wideband light source.The current pump fabry-Perot laser diode of also setovering makes Laser emission pattern outside the outside is injected into the bandwidth that narrowband optical signal the fabry-Perot laser diode suppresses the incoherent light that injects.And, can select to inject the bandwidth of light signal and in the length of the chip of laser of fabry-Perot laser diode, thereby make at one or more chambeies mould of the wavelength of the bandwidth of injection light signal and fabry-Perot laser diode overlapping usually.And, the chip of laser of fabry-Perot laser diode can have the gain bandwidth value greater than the enhancing of 40 nanometers, thereby when with the data stream modulates fabry-Perot laser diode, support that on the valid function scope of system wavelength locking keeps operable signal quality simultaneously.
Fig. 1 shows the block diagram of the embodiment of the Wave division multiplexing passive optical network that uses the optical transmitting set that is injected into the wavelength of optical signal locking.Wave division multiplexing passive optical network 100 comprises primary importance such as the central office, such as the second place and a plurality of subscribers position away from primary importance of distant-end node.
The example central office comprises first group of optical transmitting set 101-103 of the light signal in emission first wavelength band, first group of optical receiver 104-106, first group of band splitting filter 107-109, Wavelength-tracking element 130, one 1 * n bidirectional optical multiplexer/demultiplexer 112, optical coupler 115, first wideband light source 114 and second wideband light source 113 of the light signal in reception second wavelength band.
First optical multiplexer/demultiplexer 112 will carry out spectrum from first wavelength band that first wideband light source 114 receives to be cut apart, and will carry out multichannel from second wavelength band that second optical multiplexer/demultiplexer 116 receives and decompose.The band splitting filter of cutting apart filter 107 such as first broadband with the signal segmentation of first wavelength band and second wavelength band to different ports.First multiplexer/demultiplexer 112 is coupled to first group of band splitting filter 107-109.Each optical transmitting set in first group of optical transmitting set 101-103 receives the signal discrete, that spectrum is cut apart in first wavelength band, and the operative wavelength of this optical transmitting set is registered to the wavelength within the bandwidth of the signal that the spectrum that received cuts apart.
Such as each optical transmitting set of fabry-Perot laser diode can with such as the current pump of first current pump 141 with such as the modulator cooperation of first modulator 140.First current pump 141 biasing, first optical transmitting set 101, thus Laser emission pattern outside the outside is injected into the bandwidth that narrowband optical signal first optical transmitting set 101 suppresses the incoherent light that injects made.First modulator, 140 usefulness data flow are directly modulated the output signal that is produced by optical transmitting set.
First optical transmitting set 101 has one or more end faces that have antireflecting coating and the chip of laser that has one or more chambeies mould.First current pump 141 can be setovered first optical transmitting set 101 to operate as the reflective regenerate semiconductor optical amplifier.The front end face receiving spectrum fragment light signal of first optical transmitting set 101, with the output wavelength wavelength locking of first optical transmitting set 101 within the bandwidth of injecting light signal.First optical transmitting set 101 reflects back it after the light that injects is exaggerated and launches from front end face.The signal of emission modulation on unique wavelength of first optical transmitting set 101 in first wavelength band.
Each band splitting filter 107-109 is coupled to given optical transmitting set and the given optical receiver in first group of optical receiver 104-106 in first group of optical transmitting set 101-103.Each optical receiver in first group of optical receiver 104-106 is received in the signal that the discrete multichannel in second wavelength band is decomposed.
Comprise Wavelength-tracking element 130 electricity or luminous power add up device 110 and temperature controller 111.Add up device 110 of power is measured the intensity of the output signal of one or more optical receiver 104-106, to determine the difference in the transmission wavelength band between first multiplexer/demultiplexer 112 and second multiplexer/demultiplexer 116.The operating temperature of temperature controller 111 control first optical multiplexer/demultiplexers 112 is with will be from the intensity maximization of the measured output signal of optical receiver 104-106.When the transmission wavelength band of first multiplexer/demultiplexer 112 and second multiplexer/demultiplexer 116 coupling, be in its maximum from the intensity of the measured output signal of optical receiver 104-106.Therefore, the transmission wavelength that the multiplexed/multichannel that is positioned at the optical multiplexer/demultiplexer 112,116 of central office and distant-end node is decomposed can be locked to each other.
Example remote node comprises 21 * n bidirectional optical multiplexer/demultiplexer 116.21 * n bidirectional optical multiplexer/demultiplexer 116 is connected to the central office via single optical fiber 128.The broadband optical signal that 21 * n optical multiplexer/demultiplexer 116 will comprise first wavelength band carries out two-way multiplexed and multichannel decomposition with the broadband optical signal both who comprises second wavelength band.21 * n optical multiplexer/demultiplexer 116 will carry out spectrum to be cut apart from second wavelength band of second wideband light source 113.
Usually, multiplexed is that the optical information of a plurality of channels is merged into single light signal.It is that single light signal is decomposed into a plurality of discrete signal that comprises optical information channel that multichannel is decomposed.It is the wavelength band that wide wavelength band is divided into small pieces that spectrum is cut apart.
Each example subscriber location, the first subscriber position for example, the optical transmitting set 123 and being used for that comprise band splitting filter 117, is used for launching the light signal of second wavelength band receives the optical receiver 120 of the light signal of first wavelength band.Second multiplexer/demultiplexer 116 carries out first wavelength band multichannel decomposition and second wavelength band is carried out spectrum cutting apart.Second multiplexer/demultiplexer sends these signals to each band splitting filter 117-119.Band splitting filter 117-119 is used for according to the input signal band input signal being divided into output port.Each optical transmitting set such as second optical transmitting set 123 receives the signal that the spectrum in second wavelength band is cut apart, and its operative wavelength is aligned in wavelength in the signal that spectrum cuts apart for this optical transmitting set.Communication is carried out in different spectral slice and central office that each subscriber is used within second wavelength band.
Similar with the central office, each optical transmitting set and modulator, current pump and controller are cooperated.For example, second current pump, 144 biasings, second optical transmitting set 123, thereby the Laser emission pattern outside the bandwidth of the coherent light that the outside narrowband optical signal inhibition that is injected into second optical transmitting set 123 is injected.Second modulator, 143 usefulness data flow are directly modulated the output signal that is produced by second optical transmitting set 123.Second controller 145 is also cooperated with second optical transmitting set, it is overlapping with the bandwidth of the light signal that is injected that the electric current that temperature by changing second optical transmitting set or change are applied to second optical transmitting set is offset one or more chambeies mould of this optical transmitting set, thereby the gain of optimization is provided for the light signal that injects.
Second optical transmitting set 123 can have one or more end faces that have antireflecting coating and the chip of laser that has two or more chambeies mould.Injecting the bandwidth of light signal and the size of chip of laser can mate, do not rely on external equipment roughly to make wavelength in injecting the bandwidth of light signal be overlapped in one or more chambeies mould of second optical transmitting set, be offset with pattern with second optical transmitting set such as second controller 145.Therefore; the bandwidth of injection signal comprises at least one chamber mould of optical transmitting set or drops between two chamber moulds; but be in close proximity to the chamber mould of the correspondence of FP LD at the wavelength that injects place, light signal band two ends, to such an extent as to the output wavelength of the reflection at this place, wavelength band two ends is on signal strength signal intensity at least than the big 3dB of other Fabry-Perot patterns of laser.
And, be coupled to optical transmitting set input end face such as the optical fiber of first optical fiber 146 can the alignment light reflector to realize the coupling efficiency between 10% to 100%.Coupling efficiency can be measured as by the power of the measurement of coupling divided by the value of power of the measurement of coupling not.Optical fiber can be the monomode fiber that is coupled to the front end face of optical transmitting set.Be coupled back this monomode fiber optical transmitting set output wavelength power can+3dBm (luminous power of measuring with decibel with respect to 1 milliwatt) and-20dBm between.
Such as first wideband light source 114 of the spontaneous emission source that amplifies the light of first wavelength band is offered given optical transmitting set in first group of optical transmitting set 101-103 via first multiplexer/demultiplexer 112, thereby the transmission wavelength band of this optical transmitting set is carried out wavelength locking.Therefore, be injected into each of these optical transmitting sets in first group of optical transmitting set 101-103 by the signal that these spectrum are cut apart, the operating wavelength range of this group optical transmitting set 101-103 in the central office is complementary with operative wavelength at the first via multiplexer/demultiplexer 112 of central office.The wavelength locking of each optical transmitting set in the special spectrum fragment by the band splitting filter, has been solved the problem of the bigger power loss on downstream signal in 1 * n multiplexer/demultiplexer 112.By this way, will be from the wavelength of the signal of optical transmitting set 101-103 and the misalignment between the transmission wavelength band of the multiplexer/demultiplexer 112 of central office and the bigger minimum power losses that causes.
Similarly, second wideband light source 113 is provided to given optical transmitting set 123-125 with second wavelength band of light and carries out wavelength locking with the transmission wavelength band with second group of optical transmitting set.Therefore be injected into each of second group of these optical transmitting set in the optical transmitting set by the signal that these spectrum are cut apart, be complementary at the operative wavelength of second group of optical transmitting set 123-125 of subscriber this locality and the operating wavelength range of second multiplexer/demultiplexer 116.The wavelength locking of each optical transmitting set has been solved following problems in the special spectrum fragment by the band splitting filter, promptly because the wavelength that temperature dependent changes in the equipment of distant-end node imbalance power loss greatly that cause, in 1 * n optical multiplexer/demultiplexer 116 on upstream signal.By this way, will be from the wavelength of the signal of optical transmitting set 123-125 and the misalignment between the transmission wavelength band of the multiplexer/demultiplexer 116 of distant-end node and the bigger minimum power losses that causes.By using no hot multiplexer/ demultiplexer 112 and 116 or control by the temperature of multiplexer/demultiplexer 112, can realize the wavelength alignment between multiplexer/demultiplexer 112 and the multiplexer/demultiplexer 116, thereby the loss between central office and the subscriber is minimized.
Fig. 2 shows the block diagram of the embodiment of the light source that can launch laser with one or more end faces and chip of laser (laser chip) gain media.Optical transmitting set such as fabry-Perot laser diode has antireflecting coating on one or more end faces 250,251 of fabry-Perot laser diode 201.Because the antiradar reflectivity of front end face 250 can obtain extinction ratio preferably so have the fabry-Perot laser diode 201 of antireflecting coating, and have the better error rate than the uncoated fabry-Perot laser diode of standard.And, because cause FP LD 201 to have lower insertion loss, so fabry-Perot laser diode 201 can have better side mode suppression ratio owing to input end face 250 has this antireflecting coating.Therefore, inject light signal and can have lower value and the gain of FP LD201 can be provided with lower, thus the energy starvation environment (energy starved environment) that causes not the limit mould of not expecting with fabry-Perot laser diode 201 to amplify.
The front end face 250 of fabry-Perot laser diode 201 can be coated antireflecting coating to reduce reflectivity.The light reflectivity value of front end face 250 can be in 0.1% to 25% scope.Thereby can not apply rear end face 251 and have about 30% reflectivity.Perhaps, rear end face 251 is applied to has the light reflectivity of scope in 10% to 100%.
The size of adjusting chip of laser 252 with respect to the bandwidth of injecting light signal helps to reduce the interval of the chamber mould related with fabry-Perot laser diode 201.This has increased the probability of following situation, and the wavelength that promptly injects the bandwidth of light signal will be overlapping with one or more chambeies mould of fabry-Perot laser diode 201.The increase of the chip length of chip of laser 252 can be between 450 microns to 1200 microns scope.Normally about 300 microns of the chip length of standard fabry-Perot laser diode.
The gain region of chip of laser 252 can have one or more quantum well of warbling (chirped quantum well), the one or more strained quantum wells in this gain region (strainedquantum well), the one or more quantum dots in this gain region (quantum dot) in this gain region, the doping of the increase of mixing of being above standard in this gain region or other enhancement measures, increases the gain bandwidth of fabry-Perot laser diode 201 to improve FP LD.The gain bandwidth that strengthens is supported the wideer wavelength locking scope of FD LD.
Fabry-Perot laser diode 201 can be used as the operation of reflective regenerate semiconductor optical amplifier.Inject noise signal even produce the arrowband between two kinds of chamber moulds of this laser, fabry-Perot laser diode 201 can also amplify the light signal that injects as regeneration semiconductor amplifier work.As discussed, thus the size of injecting the bandwidth of light signal and chip of laser 252 can mate and make that roughly one or more chambeies mould of the wavelength of the bandwidth of injecting light signal and FP LD 201 is overlapping.Wavelength at the place, two ends of the bandwidth of injecting the light signal band is in close proximity to the chamber mould of the correspondence of FP LD, to such an extent as to the wavelength of the amplification at this place, wavelength band two ends is on signal strength signal intensity at least than the big 3dB of other limit moulds of fabry-Perot laser diode 201.Perhaps, controller change the operating temperature of FP LD 201 or electric current that change is applied to FP LD 201 come with the bandwidth of injecting light/noise signal with the chamber mould of skew FP LD overlapping, thereby the gain that optimization is provided is to injecting signal.Fabry-Perot laser diode 201 is reflection and amplification noise signal that inject, that spectrum is cut apart usually.
Fig. 3 shows the embodiment for the light source that can launch laser, injects the schematic diagram of the input power spectrum density of light signal with respect to wavelength.The input power spectrum density (power of every wavelength band) 354 of injection light signal 355 that is sent to the front end face of FP LD can have-and the 10dBm/0.1nm bandwidth is to the power spectral density the between-30dBm/0.1nm bandwidth.Can intercept the bandwidth of spectral slice 356 at value place as spectral width than low (for example)-3dB of peak value.Can also than peak value low-bandwidth of the value place of 20dB intercepting spectral slice 356 is as spectral width.Owing to inject the low-power of light signal 355 actual needs,, the saturated level of laser and accurate Laser emission behavior (quasi-lasing action) therefore suppressed sideband because having reduced noise.
The spectral bandwidth 356 that signal 355 is injected in the arrowband input that is received on input end face can change from 5GHz to 500GHz.Owing on one or more end faces, scribble antireflecting coating, have the sideband rejection ratio of 3dB to the value between the 35dB so fabry-Perot laser diode produces.The sideband rejection ratio is that pattern in injecting bandwidth is for the ratio of the optical output power of injecting the pattern outside the bandwidth.
Wideband light source can produce the light signal with many polarization states about equally.The input optical signal 355 that is injected in the laser diode is not polarized usually, thereby presents the polarization state with the polarization state of this laser diode coupling.Can have 0dB to the degree of polarization between the 3dB at the injection light signal 355 that receives on the input end face of fabry-Perot laser diode.Degree of polarization is meant the maximum power ratio between any two vertical input polarization states.Therefore, the scope of the degree of polarization of injecting power can be from 0dB to 3dB.
Fig. 4 shows the embodiment for the light source that can launch laser, and before injecting light signal and after injecting light signal, power is with respect to the schematic diagram of wavelength.For last figure, solid line shows the output spectrum that can launch the light source of laser when bias current on the Laser emission threshold current and when not injecting.Being shown in dotted line of last figure be injected into the spectrum of the broadband light in the light source that can launch laser.For figure below, solid line shows the output spectrum that has the light source that can launch laser that injects light signal.Being shown in dotted line when when arriving the bias current of FP LD in figure below can be launched the output spectrum of the light source of laser.The spectrum of reflected light of the broadband light that its expression is injected.When not having input signal to be injected in the laser, current pump biasing fabry-Perot laser diode with near the Laser emission threshold value or on operate.When being injected into light signal in the laser, the gain of this laser is suppressed to the gain of the laser that is lower than free-running operation (free-running).The scope of the operating pumps electric current of FP LD can be 0.9 to 1.5 times of Laser emission threshold value of the laser of free-running operation.By external narrowband signal is injected in the fabry-Perot laser diode and near its free-running operation laser threshold the operating pumps electric current, can realize that the condition of maximum reflection gain is suppressed at the Laser emission of injecting the Fabry-Perot pattern outside the wavelength band simultaneously.
Fabry-Perot pattern outside the bandwidth of the incoherent light that injects causes 3dB to the sideband rejection ratio between the 35dB.Add antireflecting coating to sideband rejection ratio that the FP LD with fixed pump electric current has increased this FP LD.
Modulator can immediate data be modulated the output signal that is produced by fabry-Perot laser diode.Directly the extinction ratio of Tiao Zhi signal can be greater than 5dB.The scope of data modulation rates can be from 100Mbps to 175Mbps, 600 to 650Mbps and 1000 to 1500Mbps (megabits per second).The amplification of bigger sideband and noise suppressed and injection light signal is combined and is allowed the higher transmission bit rate of WDM PON.
Fig. 5 a and 5b show the embodiment for the light source that can launch laser, such as the gain shape of the light source that can launch laser of the FP LD schematic diagram with respect to wavelength.With reference to Fig. 5 a, solid line is represented the nominal gain curve 580 of fabry-Perot laser diode, and rectangular box is represented effective practical operation scope (Δ λ
O) 579, when with light source data stream modulates such as FP LD, that can launch laser, in described practical operation scope, there is the appropriate signal quality.Horizontal line is represented wavelength locking scope (Δ λ
L) 581, when with data stream modulates FP LD, in this scope, there is the appropriate signal quality.Be shown in dotted line potential center wavelength shift 582 in the gain curve of the FP LD that may cause owing to manufacturing tolerance.Dotted line shows may be because potential center wavelength shift 583 in the gain curve of the FP LD that the skew of the temperature drift of manufacturing tolerance and FP LD generation causes.Chain-dotted line shows and comprises having the not gain curve 587 of the fabry-Perot laser diode of the chip of laser of improved gain region.
When being injected among the FP LD, incoherent signal has wavelength locking scope (Δ λ when importing
L) 581, when with data stream modulates FP LD, on this scope, there is the appropriate signal quality.For standard FP LD, the wavelength locking scope approximately can be (Δ λ
L)=± 15 nanometers (nm).For using the typical WDM-PON system configuration of 32 channels of 0.8 nanometer at interval, need approximately be ± 13nm with FP LD wavelength locking needed system bandwidth thereon.But standard FP LD oneself may not suitably cover needed system bandwidth.In WDM PON system, because temperature and manufacturing tolerance may make the center wavelength variation of FP LD.
If because variations in temperature or manufacturing tolerance make the not center among this system bandwidth of FP LD, then effective practical operation scope 581 of FP LD will reduce.Expression has been described this relation between the various parameters, and diagram illustrates with reference to Fig. 5 a.
Δλ
L＝Δλ
O+Δλ
C+Δλ
T
Δ λ wherein
LBe the needed lock-in range of FP laser diode, Δ λ
OBe the valid function scope of FP LD after the variation of considering temperature and manufacturing tolerance, Δ λ
CBe because the variation at the gain curve center that causes of manufacturing tolerance, and Δ λ
TBe because the skew of the gain curve that the variations in temperature of FP LD causes.
For example, the controlled operating temperature range of consideration ± 10C, Δ λ
CThe manufacturing tolerance of=± 5nm and Δ λ
OThe needed system bandwidth of=± 13nm (valid function scope).Because the typical tuning factor of the gain curve of FP LD can be 0.5nm/C, so ± the 10C temperature range is corresponding to Δ λ
TThe center wavelength variation of=± 5nm.The needed lock-in range that is used for this exemplary laser diode becomes Δ λ
L=± 23nm (± 13nm, ± 5nm, ± 5nm).So since standard FP LD have approximately ± lock-in range of 15nm this just produced problem.If the not controlled temperature range of WDM PON use ± 25C and ± the standard manufacture tolerance of 10nm, then this problem also can increase.When with the data stream modulates fabry-Perot laser diode, needed lock-in range becomes Δ λ
L=± 35.5nm is to support operable signal quality.
WDM PON can solve this problem in many ways.
A kind of scheme is to use the FP LD that has than the bigger wavelength locking scope of wavelength locking scope (by wideer nominal gain curve 580) of standard value, comes the influence for the center of gain spectra of predicted temperature drift and manufacturing tolerance.FP LD can use the non-standard chip of laser of its gain bandwidth greater than the gain bandwidth of the standard value of pact ± 15nm.Can make the laser diode of these types to produce wideer nominal gain curve 580 by the gain region that improves chip of laser.Some method that is used for increasing the gain bandwidth of semiconductor laser comprises: the doping, the quantum well of warbling that is used for gain region, the strained quantum well that is used for gain region or the use that increase gain region are used for the quantum dot of gain region, perhaps other similar approach.
The chip of laser of fabry-Perot laser diode with gain region of enhancing has greater than 40 nanometers (± 20nm) gain bandwidth value, after being injected into the input incoherent signal, to be supported in the wavelength locking on this bandwidth, when with the data stream modulates fabry-Perot laser diode, also support spendable signal quality simultaneously.After modulated, the spendable output signal that FP LD is produced has the acceptable error rate in the opereating specification of being modulated.
With reference to Fig. 5 b, another solution that improves the wavelength locking operation is to use polytype laser diode.Every kind of fabry-Perot laser diode has the chip of laser that has not improved gain region 587.Make every kind of FP LD with different offset center wavelength 585,586.The certain wavelengths zone is arrived in laser grouping (bin), thereby two or more different lasers can be merged the different piece that is used for channel approach.
With reference to Fig. 1, be coupling in the output of second multiplexer/demultiplexer 116 such as the 3rd optical transmitting set 124a and a plurality of light sources the 4th optical transmitting set 124b, that can launch laser.The 3rd optical transmitting set 124a and the 4th optical transmitting set 124b are with roughly the same wavelength emission output signal, and the narrowband optical signal of being cut apart by the spectrum that injects locks each output signal.The 3rd optical transmitting set 124a can comprise the chip of laser with first centre wavelength.The 4th optical transmitting set 124b can comprise second chip of laser with second centre wavelength.Second centre wavelength is deviated from first centre wavelength.Can launch the bandwidth of wavelength locking scope of first light source of laser and the bandwidth of wavelength locking scope that can launch the secondary light source of laser and merge, with the opereating specification that is equal to or greater than system bandwidth, because center wavelength variation that manufacturing tolerance produces and because the skew sum of the gain curve that temperature change produces.
And, the optical transmitting set at the subscriber place can be divided into two or more groups, thereby two or more different lasers can be merged to cover whole system bandwidths.First group comprises a port in chip of laser with first centre wavelength and the first half port that is connected to multiplexer/demultiplexer independently.For example, second optical transmitting set 123 can comprise the chip of laser with first centre wavelength and be connected to first port in the first half port of multiplexer/demultiplexer 116.Second group comprises a port in chip of laser with second centre wavelength and the latter half port that is connected to multiplexer/demultiplexer independently.For example, the 5th optical transmitting set 125 can comprise the N port in chip of laser with second centre wavelength and the latter half port that is connected to multiplexer/demultiplexer 116 independently.
With reference to Fig. 5 b, use a plurality of FP LD to allow needed system bandwidth is divided into less zone or group, thereby each laser necessary operations scope has also just diminished with different centre wavelengths 585,586.For example, if needed system bandwidth be ± 13nm and we use two kinds of different lasers to cover this zone, then each laser necessary operations scope can be Δ λ
O=± 6.5nm.By reducing the opereating specification of various lasers, can reduce necessary lock-in range Δ λ.Though only use two groups in the above example, can also use more group.The maximum quantity of group can equal the quantity of employed WDM channel in communication system.Dissimilar FPLD of grouping and chip of laser with gain bandwidth of enhancing are carried out in conjunction with the trade-off problem that also helps between technical solution restriction and the cost.
With reference to Fig. 1, Wave division multiplexing passive optical network 100 can use different wavelength bands in downstream signal with in the upstream signal, such as use first wavelength band for downstream signal, use second wavelength band for upstream signal.Downstream signal is represented the signal from the optical transmitting set 101-103 of central office to the subscriber, and upstream signal is represented the signal from subscriber's optical transmitting set 123-125 to the central office.The wavelength of downstream signal for example can be λ 1, λ 2 ...., λ n, and the wavelength of upstream signal for example can be the λ 1 that carries in different wavelength bands
*, λ 2
*, λ n
*, wherein separate λ 1 and λ 1 by the Free Spectral Range of multiplexer/demultiplexer
*
As mentioned above, 1 * n optical multiplexer/demultiplexer 116 has the function that the light signal multichannel from the left-hand end mouth is decomposed n the port on right side.And, will arrive a port in left side from the optical signal multiplexer of a right side n port simultaneously.1 * n optical multiplexer/demultiplexer 116 is divided into narrow spectral wavelength width with the second wavelength band spectrum.Because can on more than two wavelength band, operate optical multiplexer/demultiplexer, thus can be simultaneously multiplexed and multichannel decompose the upstream signal and the downstream signal of two-way propagation on the different wave length band.One or more intervals of the Free Spectral Range of each the wavelength band offset light multiplexer/demultiplexer that optical multiplexer/demultiplexer can be operated thereon.
For an embodiment, upstream band of wavelengths can be in the wave-length coverage from 1520nm to 1620nm.This be since for example available higher-wattage ASE source in this wave-length coverage such as erbium-doped fiber amplifier cause.Downstream band of wavelengths can be in the bandwidth range from 1250nm to 1520nm.Use for the arrowband, the wave-length coverage of upstream and downstream can be respectively 1525～1565nm and 1570～1610nm.Perhaps, second wavelength band can be the wavelength band with the spectral separation between the peak wavelength 5-100 of first wavelength band nanometer.Spectral separation between first wavelength band and second wavelength band should be large enough to prevent disturb between downstream signal of cutting apart to the spectrum of subscriber's filtering and the upstream signal from this subscriber's filtering.
Note, specific reference number should be interpreted as according to literal order, be different from second wavelength band but be construed as first wavelength band.Therefore, described specific detail only is exemplary.Some other embodiment can comprise following situation.Individual equipment can provide the function of first wideband light source and second wideband light source.WDM PON can use more than two different wavelength bands.Each multiplexer/demultiplexer can be the waveguide optical grating of no hot type row.Each multiplexer/demultiplexer only is to cut apart the light signal that input optical signal rather than spectrum are cut apart input.Existence is more than one distant-end node.Optical transmitting set can be modulated with continuous wave operation and by external modulator etc.The receiver input power can change from-27dBm to-36dBm to about 170Mb/s for 100Mb/s.Fiber lengths between central office and the distant-end node can grow to 20 kilometers.Fiber lengths between distant-end node and the subscriber can grow to 15 kilometers.Can for example directly modulate each optical transmitting set so that information is embedded on the specific wavelength that is sent by optical transmitting set by current-modulation.Each optical transmitting set comprises the light source that can launch laser.One or more optical transmitting sets can be the Fabry-Perot semiconductor lasers that has injected the broadband incoherent light of cutting apart from the spectrum that amplifies spontaneous emission light source.One or more optical transmitting sets can be wavelength seeding (wavelength-seeded) reflective semiconductor image intensifers (SOA).One or more optical transmitters support high bit rate modulation and long Distance Transmission.Reflection SOA can also be as modulating equipment work.Can use the wavelength seeding that optical transmitting set is modulated and wavelength locking, this optical transmitting set provide signal gain can for the wavelength within the spectral slice and increase extinction ratio between the wavelength that injects outside wavelength and this spectral slice.Wideband light source can be based on light source, the light source based on the rare earth ion doped optical fiber amplifier, light-emitting diode or the similar devices of semiconductor optical amplifier.Wideband light source can provide the light that has any characteristic, such as relevant or incoherent light.
Can be by comprising the integrated waveguide grating, using the waveguide optical grating of arrangement of device, diffraction grating or the similar device of film filter to realize optical multiplexer/demultiplexer.Optical multiplexer/demultiplexer can also be dielectric interference filter or similar device.Multiplexer/demultiplexer can have independently between the wavelength channel, 25 gigahertzs are to the wavelength interval between 400 gigahertzs.The temperature controlled use of laser diode has limited the wavelength shift of laser.Can use near the little heater of laser temperature and be controlled between 40 degrees centigrade to 50 degrees centigrade them.This has limited wavelength shift and has reduced the required lock-in range of laser diode.Can also use the temperature range of other values.
EPON comprise the Passive Optical Components that is not provided power supply and between central office and light subscriber without any active equipment.The topological structure of Optical Distribution Network can be a Star topology, it comprises the distant-end node with optical multiplexer/demultiplexer that close subscriber places, and be used for by single fiber relaying and central office communication also the optical fiber by a plurality of users oneself to/from each subscriber's distribute signals.Second multiplexer/demultiplexer can be at remote location, thereby surrounding environment is enough different with the environment of first multiplexer/demultiplexer, to change the transmission wavelength band of second multiplexer/demultiplexer when the transmission wavelength band coupling of the transmission wavelength band of second multiplexer/demultiplexer and first multiplexer/demultiplexer fully.
In above-mentioned discussion, the present invention has been described with reference to example embodiment of the present invention.But clearly under the situation of the spirit and scope that do not depart from the described broad of the present invention of claims, can carry out various modifications and variations to it.Therefore specification and accompanying drawing should be used as illustrative rather than restrictive.
Claims (48)
1. equipment comprises:
Can launch the light source of laser, on can launching one or more end faces of light source of laser, this has antireflecting coating, wherein this can launch the spectral slice of the light source of laser from the wideband light source receiving optical signals, with the output wavelength wavelength locking of the light source that this can be launched laser within the bandwidth of injecting light signal; With
Current pump is used to setover and can launches the light source of laser, so that be injected into the Laser emission pattern outside the bandwidth of light signal that the light signal of the light source that can launch laser suppresses this injection.
2. equipment according to claim 1, the wherein said light source that can launch laser is a fabry-Perot laser diode.
3. equipment according to claim 2 also comprises:
Fabry-Perot laser diode, it has the chip of laser that has two or more chambeies mould, wherein inject the bandwidth of light signal and the size of chip of laser and mate, roughly to make one or more chambeies mould of wavelength in injecting the bandwidth of light signal and fabry-Perot laser diode overlapping.
4. equipment according to claim 3, the size of wherein said chip of laser has the chip length greater than 450 microns.
5. equipment according to claim 2, the light reflectivity that wherein is used for front end face have can from 0.1% to 25% value that changes.
6. equipment according to claim 2, the light reflectivity that wherein is used for rear end face have can from 10% to 100% value that changes.
7. equipment according to claim 2, wherein said current pump biasing fabry-Perot laser diode is to operate as the reflective regenerate semiconductor optical amplifier.
8. equipment according to claim 2, wherein said fabry-Perot laser diode have antireflecting coating and have side mode suppression ratio greater than the value of 3dB with generation on one or more end faces.
9. equipment according to claim 2 also comprises:
Controller, be used for temperature by changing fabry-Perot laser diode one or more chambeies mould of fabry-Perot laser diode is offset to the bandwidth of injecting light signal overlapping, thereby provide the gain of optimization for injecting light signal.
10. equipment according to claim 2 also comprises:
Controller, the electric current that is used for being applied to fabry-Perot laser diode by change is offset to one or more chambeies mould of fabry-Perot laser diode with the bandwidth of injecting light signal overlapping, thereby provides the gain of optimization for injecting light signal.
11. equipment according to claim 1, wherein said equipment are the parts of EPON, this equipment also comprises:
Wideband light source, the light signal that is used for comprising first wavelength band offers multiplexer/demultiplexer, and wherein fabry-Perot laser diode is coupled to the port of multiplexer/demultiplexer with the spectral slice from this wideband light source receiving optical signals.
12. equipment according to claim 11, wherein said multiplexer/demultiplexer independently has between the wavelength channel at 25 Gigahertzs to the wavelength interval between 400 Gigahertzs at each.
13. equipment according to claim 2 also comprises:
Modulator, be used to use data flow to come the output signal of data-modulated by the fabry-Perot laser diode generation, wherein the chip of laser of fabry-Perot laser diode has the gain bandwidth value greater than 40 nanometers, after being injected into input optical signal, to support the wavelength locking on this bandwidth, with the data stream modulates fabry-Perot laser diode time, still support operable signal quality simultaneously.
14. equipment according to claim 2, wherein the gain region of chip of laser has the one or more quantum well of warbling in the gain region of this chip of laser.
15. equipment according to claim 2, wherein the gain region of chip of laser has the one or more strained quantum wells in the gain region of this chip of laser.
16. equipment according to claim 2, wherein the gain region of chip of laser has the one or more quantum dots in the gain region of this chip of laser.
17. equipment according to claim 2 is wherein made amendment the gain region of described chip of laser, to pass through the doping above the increase of the doping of the standard in the gain region of this chip of laser, increases the gain bandwidth of fabry-Perot laser diode.
18. equipment according to claim 2, the wherein said pump pump electric current of will setovering offers fabry-Perot laser diode, and the value of this biasing pump electric current is 0.9 to 1.5 times of the Laser emission threshold current that takes place when input optical signal not being injected into laser.
19. equipment according to claim 2 also comprises:
Modulator is used for the output signal that the immediate data modulation is produced by fabry-Perot laser diode, and the extinction ratio of the signal of wherein said direct modulation is greater than 5dB.
20. equipment according to claim 2 also comprises:
Optical fiber, it is coupled to the input end face of fabry-Perot laser diode and aims to realize the coupling efficiency greater than 20% with described input end face.
21. equipment according to claim 2 also comprises:
The input end face of fabry-Perot laser diode; Wherein has negative 10dBm/0.1nm bandwidth to the power spectral density between the negative 30dBm/0.1nm bandwidth at the injection light signal that receives on the described input end face.
22. equipment according to claim 2 also comprises:
Monomode fiber, first end face that it is coupled to fabry-Perot laser diode, the power of the output wavelength of the fabry-Perot laser diode of the described monomode fiber that wherein is coupled back can+3dBm and-20dBm between.
23. equipment according to claim 2 also comprises:
The input end face of fabry-Perot laser diode wherein has 0dB to the degree of polarization between the 3dB at the injection light signal that receives on the described input end face.
24. equipment according to claim 2 also comprises:
The input end face of fabry-Perot laser diode, the bandwidth of the injection light signal that wherein receives on described input end face is less than 500 Gigahertzs.
25. equipment according to claim 2, wherein said current pump is not when being injected into this laser with input optical signal, the biasing fabry-Perot laser diode is to operate on this Laser emission threshold value, and when light signal is injected into described fabry-Perot laser diode, the gain of this laser is suppressed to the gain of the fabry-Perot laser diode that is lower than free-running operation.
26. an equipment comprises:
Can launch the light source of laser, the chip of laser that it has one or more end faces and has one or more chambeies mould, wherein this first end face of light source that can launch laser is from the spectral slice of wideband light source receiving optical signals, with the output wavelength wavelength locking of the light source that this can be launched laser within the bandwidth of injecting light signal, and be exaggerated with wavelength locking after described injection light signal be reflected back and launch from first end face;
Current pump, be used to setover can launch laser light source to operate as the reflective regenerate semiconductor optical amplifier, the size of wherein injecting the bandwidth of light signal and chip of laser cooperates roughly to make one or more chambeies mould of wavelength in the bandwidth of this injection light signal and this light source that can launch laser overlapping, does not influence external equipment this light source that can launch laser, that be offset the pattern of this light source that can launch laser and rely on.
27. equipment according to claim 26, the wherein said light source that can launch laser is a fabry-Perot laser diode.
28. equipment according to claim 27,
Monomode fiber, first end face that it is coupled to fabry-Perot laser diode, the power of the output wavelength of the fabry-Perot laser diode of the described monomode fiber that wherein is coupled back can be at+3dBm between-the 20dBm.
29. equipment according to claim 27, wherein said current pump is not when being injected into this laser with input optical signal, the biasing fabry-Perot laser diode is to operate on this Laser emission threshold value, and when light signal is injected into described fabry-Perot laser diode, the gain of this laser is suppressed to the gain of the fabry-Perot laser diode that is lower than operation.
30. equipment according to claim 27, the wherein said pump pump electric current of will setovering offers fabry-Perot laser diode, and the value of this biasing pump electric current is 0.9 to 1.5 times of the Laser emission threshold current that takes place when input optical signal not being injected into laser.
31. equipment according to claim 27 also comprises:
Modulator is used for the output signal that the immediate data modulation is produced by fabry-Perot laser diode, and the extinction ratio of the signal of wherein said direct modulation is greater than 5dB.
32. equipment according to claim 27 also comprises:
Modulator is used to use data flow immediate data modulation fabry-Perot laser diode; Wherein the chip of laser of fabry-Perot laser diode has the gain bandwidth value greater than 40 nanometers, after being injected into input optical signal, to support the wavelength locking on this bandwidth, with the data stream modulates fabry-Perot laser diode time, support operable signal quality simultaneously.
33. equipment according to claim 27, wherein at least one end face has antireflecting coating.
34. equipment according to claim 27, wherein said equipment are the parts of EPON, this equipment also comprises:
Wideband light source, the light signal that is used for comprising first wavelength band offers multiplexer/demultiplexer, and wherein fabry-Perot laser diode is coupled to the port of multiplexer/demultiplexer with the spectral slice from this wideband light source receiving optical signals.
35. equipment according to claim 27, wherein the gain region of chip of laser has the one or more quantum well of warbling in the gain region of this chip of laser.
36. equipment according to claim 27, wherein the gain region of chip of laser has the one or more strained quantum wells in the gain region of this chip of laser.
37. equipment according to claim 27, wherein the gain region of chip of laser has the one or more quantum dots in the gain region of this chip of laser.
38. equipment according to claim 27 is wherein made amendment the gain region of described chip of laser, the doping of the increase of mixing with the standard of the gain region by surpassing this chip of laser increases the gain bandwidth of fabry-Perot laser diode.
39. equipment according to claim 27, the described pump electric current of the fabry-Perot laser diode that wherein is used to setover has side mode suppression ratio greater than the value of 3dB for the Fabry-Perot mode producing outside the bandwidth of injecting light signal.
40. equipment according to claim 27, the size of wherein said chip of laser has the chip length of being longer than 450 microns.
41. equipment according to claim 27 also comprises:
The input end face of fabry-Perot laser diode wherein has 0dB to the degree of polarization between the 3dB at the injection light signal that receives on the described input end face.
42. equipment according to claim 27 also comprises:
The input end face of fabry-Perot laser diode, the bandwidth of the injection narrowband optical signal that wherein receives on described input end face is less than 500 Gigahertzs.
43. equipment according to claim 27 also comprises:
The input end face of fabry-Perot laser diode, wherein have at the injection narrowband optical signal that receives on the described input end face-the 10dBm/0.1nm bandwidth is to the power spectral density the between-30dBm/0.1nm bandwidth.
44. a multichannel EPON wavelength-division multiplex system comprises:
Wideband light source produces broadband optical signal;
Demultiplexer, it carries out spectrum with broadband optical signal cuts apart to produce a plurality of narrowband optical signals;
First light source, first output that it can be launched laser and be coupling in demultiplexer, first light source that wherein can launch laser comprises first chip of laser with first centre wavelength, and the narrowband optical signal of being cut apart by first spectrum that injects carries out wavelength locking; With
Secondary light source, second output that it can be launched laser and be coupling in demultiplexer, wherein, the secondary light source that can launch laser comprises second chip of laser with second centre wavelength, and the narrowband optical signal of being cut apart by second spectrum that injects carries out wavelength locking.
45. according to the described multichannel EPON of claim 44 wavelength-division multiplex system, the bandwidth and the bandwidth of wavelength locking scope that can launch the described secondary light source of laser of wavelength locking scope that wherein can launch described first light source of laser merge the opereating specification of the bandwidth that is equal to or greater than described system, because center wavelength variation that manufacturing tolerance causes and because the gain curve skew sum that variations in temperature causes.
46., also comprise according to the described multichannel EPON of claim 44 wavelength-division multiplex system:
Current pump, be used to setover can launch laser first light source to operate as the reflective regenerate semiconductor optical amplifier.
47., wherein be injected into first in first light source that to launch laser and inject narrowband optical signal and be suppressed at described first Laser emission of injecting the Fabry-Perot pattern outside the bandwidth of narrowband optical signal according to the described multichannel EPON of claim 44 wavelength-division multiplex system.
48. according to the described multichannel EPON of claim 44 wavelength-division multiplex system, the side mode suppression ratio that the Fabry-Perot mode producing outside the bandwidth of the wherein said first injection narrowband optical signal is at least 3 decibels.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/US2003/017201 WO2004107628A1 (en) | 2003-05-29 | 2003-05-29 | A light source cable of lasing that is wavelength locked by an injected light signal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1802807A true CN1802807A (en) | 2006-07-12 |
| CN1802807B CN1802807B (en) | 2011-01-12 |
Family
ID=33488797
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN038268272A Expired - Fee Related CN1802807B (en) | 2003-05-29 | 2003-05-29 | A light source of lasing that is wavelength locked by an injected light signal |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP1634398A4 (en) |
| JP (1) | JP2006526307A (en) |
| CN (1) | CN1802807B (en) |
| AU (1) | AU2003238859A1 (en) |
| WO (1) | WO2004107628A1 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008116357A1 (en) * | 2007-03-28 | 2008-10-02 | Xi'an Institute Of Optics And Precision Mechanics Of Chinese Academy Of Sciences | A method for producing an externally injected gain switch laser ultrashort pulse |
| CN101207443B (en) * | 2007-11-29 | 2012-05-30 | 华为技术有限公司 | System, apparatus and method for locking injection of light source |
| CN107332624A (en) * | 2017-06-20 | 2017-11-07 | 武汉光迅科技股份有限公司 | A kind of DML devices for completing linear modulation mode |
| CN109428832A (en) * | 2017-08-25 | 2019-03-05 | 格芯公司 | Based on the data stream management in VCSEL optical communication system |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100325687B1 (en) | 1999-12-21 | 2002-02-25 | 윤덕용 | A low-cost WDM source with an incoherent light injected Fabry-Perot semiconductor laser diode |
| KR100955129B1 (en) | 2003-05-30 | 2010-04-28 | 정보통신연구진흥원 | wavelength-division multiple access passive optical network using the incoherent broadband light source |
| US7313157B2 (en) | 2003-12-19 | 2007-12-25 | Novera Optics, Inc. | Integration of laser sources and detectors for a passive optical network |
| KR100566293B1 (en) * | 2004-01-02 | 2006-03-30 | 삼성전자주식회사 | Bidirectional wavelength division multiplexing self-healing passive optical network |
| KR100703388B1 (en) * | 2004-12-29 | 2007-04-03 | 삼성전자주식회사 | Optical transceiver and passive optical network using the same |
| KR100706874B1 (en) * | 2005-08-19 | 2007-04-12 | 한국과학기술원 | The apparatus for varying decision threshold level in the receiver of light communication system |
| KR100698766B1 (en) | 2005-09-07 | 2007-03-23 | 한국과학기술원 | Apparatus for Monitoring Failure Positions in Wavelength Division Multiplexing-Passive Optical Networks and Wavelength Division Multiplexing-Passive Optical Network Systems Having the Apparatus |
| KR100785436B1 (en) | 2005-09-20 | 2007-12-13 | 한국과학기술원 | Wavelength division multiplexing passive optical network for convergence broadcasting service and communication service |
| US8571410B2 (en) | 2006-10-11 | 2013-10-29 | Novera Optics, Inc. | Mutual wavelength locking in WDM-PONS |
| EP2372936A1 (en) * | 2010-03-29 | 2011-10-05 | Alcatel Lucent | Photonic integrated transmitter |
| JP5895558B2 (en) * | 2012-01-27 | 2016-03-30 | 富士通株式会社 | Optical transmission system |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100325687B1 (en) * | 1999-12-21 | 2002-02-25 | 윤덕용 | A low-cost WDM source with an incoherent light injected Fabry-Perot semiconductor laser diode |
| US6614822B2 (en) * | 2000-02-03 | 2003-09-02 | The Furukawa Electric Co., Ltd. | Semiconductor laser devices, and semiconductor laser modules and optical communication systems using the same |
| US6587484B1 (en) * | 2000-10-10 | 2003-07-01 | Spectrasensor, Inc,. | Method and apparatus for determining transmission wavelengths for lasers in a dense wavelength division multiplexer |
| CN1343029A (en) * | 2001-09-26 | 2002-04-03 | 天津大学 | Actively mode-locking optical fibre ring laser insensible to polarization with stable cavity length for wavelength locking device |
-
2003
- 2003-05-29 AU AU2003238859A patent/AU2003238859A1/en not_active Abandoned
- 2003-05-29 EP EP03734316A patent/EP1634398A4/en not_active Withdrawn
- 2003-05-29 CN CN038268272A patent/CN1802807B/en not_active Expired - Fee Related
- 2003-05-29 JP JP2005500433A patent/JP2006526307A/en active Pending
- 2003-05-29 WO PCT/US2003/017201 patent/WO2004107628A1/en active Application Filing
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008116357A1 (en) * | 2007-03-28 | 2008-10-02 | Xi'an Institute Of Optics And Precision Mechanics Of Chinese Academy Of Sciences | A method for producing an externally injected gain switch laser ultrashort pulse |
| CN101207443B (en) * | 2007-11-29 | 2012-05-30 | 华为技术有限公司 | System, apparatus and method for locking injection of light source |
| CN107332624A (en) * | 2017-06-20 | 2017-11-07 | 武汉光迅科技股份有限公司 | A kind of DML devices for completing linear modulation mode |
| CN107332624B (en) * | 2017-06-20 | 2019-09-10 | 武汉光迅科技股份有限公司 | A kind of DML device of achievable linear modulation mode |
| CN109428832A (en) * | 2017-08-25 | 2019-03-05 | 格芯公司 | Based on the data stream management in VCSEL optical communication system |
| CN109428832B (en) * | 2017-08-25 | 2022-05-03 | 马维尔亚洲私人有限公司 | Data flow management in VCSEL-based optical communication systems |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2006526307A (en) | 2006-11-16 |
| AU2003238859A1 (en) | 2005-01-21 |
| WO2004107628A1 (en) | 2004-12-09 |
| CN1802807B (en) | 2011-01-12 |
| EP1634398A4 (en) | 2008-08-20 |
| EP1634398A1 (en) | 2006-03-15 |
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