CN1821788A - Embedded type micro contact element and its producing method - Google Patents
Embedded type micro contact element and its producing method Download PDFInfo
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- CN1821788A CN1821788A CN 200510051674 CN200510051674A CN1821788A CN 1821788 A CN1821788 A CN 1821788A CN 200510051674 CN200510051674 CN 200510051674 CN 200510051674 A CN200510051674 A CN 200510051674A CN 1821788 A CN1821788 A CN 1821788A
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Abstract
This invention relates to an inserted micro-contact element processed by a micro-electromechanical technology, in which, said element includes a cantilever capable of defining a first long side edge and a second long side edge backed to it, a pinpoint part connected with one end of the first long side edge and extended along the vertical direction to said cantilever and an inserted part extended along the vertical direction to the second long side edge.
Description
Technical field
The present invention is relevant with micro-contact element, more detailed a kind of embedded type micro contact element and the manufacture method thereof of being meant.
Background technology
When test high density or electric device at a high speed such as LSI or VLSI circuit, must use probe Probe Card with a large amount of micro-contact element probes, with by having flexible by this micro-contact element for one and the electric conductor characteristic of electric connection can being provided, as and thing to be tested between the element of electrically conducting, as usefulness as the test contact element of LSI and VLSI wafer, semiconductor crystal wafer, wafer pre-burning, package semiconductor device and printed circuit board (PCB).Certainly, micro-contact element also can be in order to the usefulness as the IC lead-in wire of IC encapsulation.But for ease of follow-up explanation, its micro-contact element is narrated with the probe as probe.
General micro-contact element has different aspects in response to its demand, and a kind of overarm contact element that declines that is is wherein arranged, and overarm declines contact element owing to have higher elasticity, and tolerable contacts with foreign object and produces and still can keep the state connected when being offset.
With probe, patent case as United States Patent (USP) US6268015 number, as shown in Figure 1, it is to go out the structure of probe by piling layer by micro-electromechanical technology in the mode of plated metal, or is assembled with juncture after in the plated metal mode each unit being made respectively again; The precision that engages the assembling processing procedure is than the optical graving path difference, joint repeatedly will because of accumulation for several times bit errors cause the deviations of needle point 1 to amplify or the abutment error of semi-girder 2 and pillar 3, and then cause the needle point detecting location not good with shortcoming such as probe consistency of performance reduction.
Just like the U.S. US20010012739 number patent case is disclosed in addition, it is by produced the structure of probe in the plated metal mode by micro-electromechanical technology equally, and its needle point is to engage with welding manner, and its pillar (be pin at the bottom of) is with the routing mode structure of plated metal pillar reinforce externally, its with the routing mode make pillar not only volume production speed suitable slowly, and processing procedure is complicated, needs accurate precision to be controlled and makes it to make difficulty.
The patent case of United States Patent (USP) US6399900 number for another example, also be to make probe structure with depositional mode by micro-electromechanical technology, its needle point closes with welding manner and needle body one termination, the other end of needle body then attaches with the surface of base version and engages, its steadiness is relatively poor, down may be in repetitiousness operation because of fatigue of materials produce the facts that breaks away from the base version, and needle point needs weld in quite accurate mode, will cause the inhomogeneous of needle point contact force if any the skew on the welding position.
Moreover as United States Patent (USP) US6414501 patent case, it is by being made probe by micro-electromechanical technology in the mode of etching silicon base material, and engages with the base version after plating conductive film in the outside of probe again; But, the probe portion major part is made by silicon substrate, what the thickness of conductive film was suitable approaches, the made probe structure surface of silicon-coating base material only, so not high demand that can't meet high flow capacity of tolerance of its electric current, and because the flexible structure of probe be its material with monocrystalline silicon mainly, easy embrittlement and can't repairing.
Secondly, patent case with United States Patent (USP) US4961052, US5172050, US5723894 number, it all is in the mode of the silica-based version of direct etching, produces probe with the monocrystalline silicon material, plates a conductive film again outside the probe made by silica-based version and is electrically connected to provide; But because conductive film can't tolerate the demand of high flow capacity, and probe is its material with monocrystalline silicon mainly, the shortcoming that has easy embrittlement to repair.
In addition, with United States Patent (USP) US5974662 patent case, it is a kind of plane adjusting mechanism, it is to utilize the fine setting on some planes to make it to carry out the adjustment of level when assembling, and, must between probe and electronics base version, increase the elastic probe of several layers for making that all circuit still can keep the excellent contact state when adjusting; But, since this structure too the transmission path of complexity and circuit is long and be not suitable for the transmission of high frequency.
Summary of the invention
In view of this, fundamental purpose of the present invention is that a kind of embedded type micro contact element and manufacture method thereof are being provided, and is to make tip position identical with the positioning reference of junction, with the single juncture overall package precision is improved, and promotes the overall performance consistance.
Another object of the present invention is that a kind of embedded type micro contact element and manufacture method thereof are being provided, and its micro-contact element is that precision is higher by one-body molded.
A further object of the present invention is that a kind of embedded type micro contact element and manufacture method thereof are being provided, and its micro-contact element is to be embedded in the base version, preferable anchorage force can be provided and the auxiliary positioning effect is provided.
Another purpose of the present invention is that a kind of embedded type micro contact element and manufacture method thereof are being provided, and the electric current tolerance of its micro-contact element is bigger.
Of the present invention time a purpose is that a kind of embedded type micro contact element and manufacture method thereof are being provided, and its probe has high conductivity and fatigue resistence.
Next purpose of the present invention is that a kind of embedded type micro contact element and manufacture method thereof are being provided, and the signal transmission of its micro-contact element is shorter, is beneficial to high-frequency transmission.
For reaching above-mentioned purpose, a kind of embedded type micro contact element provided by the present invention, be that this embedded type micro contact element includes by made by micro electronmechanical processing procedure: a cantilever, this cantilever can define one first long side and second long side back on this first long side; One needle tip is to be connected in this first long side, one end and to be to extend in vertical direction with this cantilever to form; One Embedded Division is that vertical extension of institute forms on this second long side.
Further understand and approval for having, enumerate following preferred embodiment now feature of the present invention and purpose, and after conjunction with figs. is illustrated in.
Description of drawings
Fig. 1 is a kind of existing probe structure synoptic diagram;
Fig. 2 a to Fig. 2 ff is the manufacturing process synoptic diagram of the present invention's first preferred embodiment;
Fig. 3 a to Fig. 3 k is the manufacturing process synoptic diagram of the present invention's second preferred embodiment;
Fig. 4 is the stereographic map of the present invention's second preferred embodiment;
Fig. 5 is that shown in Figure 4 another implemented the stereographic map of aspect;
Fig. 6 to Fig. 7 is the assembling flow path synoptic diagram of the present invention's the 3rd preferred embodiment;
Fig. 8 is the synoptic diagram of the present invention's the 4th preferred embodiment;
Fig. 9 is the synoptic diagram of the present invention's the 5th preferred embodiment;
Figure 10 is the synoptic diagram of the present invention's first preferred embodiment;
Figure 11 to Figure 13 is the different synoptic diagram of implementing aspect of the present invention;
Figure 14 is the stereographic map of the present invention's the 3rd preferred embodiment;
Figure 15 to Figure 17 is the synoptic diagram of different embodiments of the invention aspect.
Embodiment
Seeing also Fig. 2 a to Fig. 2 ff, is the manufacture method of the present invention's first preferable enforcement embedded type micro contact element that provides, and its step includes:
(A) shown in Fig. 2 a, get a base version 11, this base version 11 is single silicon wafer version.
(B) shown in Fig. 2 b, deposition one dielectric film 12 on base version 11.This dielectric film 12 is a kind of by the made film of silicon nitride material, is can be by being coated by the mode of low pressure chemical vapor phase deposition (LPCVD).
(C) shown in Fig. 2 c, coating one first shielding layer 13 on this dielectric film 12, and make this first shielding layer 13 form an opening, promptly carry out the lithographic process in the micro image etching procedure manufacture of semiconductor.
(D) shown in Fig. 2 d, remove the dielectric film 12 in the opening.Its removing method can utilize reactive ion etching (RIE).
(E) shown in Fig. 2 e, remove first shielding layer 13 and with anisotropic etching, as potassium hydroxide (KOH), etching and processing is carried out at base version 11 positions that not covered by dielectric film 12, make this base version 11 be formed with a breach 111 that is the inverted pyramid type.
(F) shown in Fig. 2 f, remove dielectric film 12.Can utilize hot phosphoric acid etch processing procedure or reactive ion etching processing procedure (RIE) to remove dielectric film 12, etching material and condition can't have any influence to the base version through selecting.
(G) shown in Fig. 2 g, be coated with a conductive film 14 in the top layer of this base version 11.Wherein the material of this conductive film can be titanium, and the mode of coating conductive film 14 can be by being finished by modes such as depositional mode such as sputter, evaporation and plating.
(H) shown in Fig. 2 h, be coated with one second shielding layer 15 in the top layer of this conductive film 14, and this second shielding layer 15 is formed with an opening corresponding to these base version 11 breach 111.
(I) shown in Fig. 2 i, be arranged in the reinforcement film 16 of one to several layers of coatings on the conductive film 14 of this breach 111 in this second shielding layer 15 and this.This reinforcement film 16 has abrasion resisting, low characteristic of being stained with viscosity, satisfactory electrical conductivity, as rhodium metal.
(J) shown in Fig. 2 j, remove second shielding layer 15.This second shielding layer 15 can be by being removed by etched mode, and the reinforcement film of coating on this second shielding layer 15 16 is also removed in the lump.
(K) shown in Fig. 2 k, on the local location of this conductive film 14, form one the 3rd shielding layer 17.Wherein the 3rd shielding layer 17 is to be formed on two local locations that reach the same side on this breach 111.
(L) as shown in figure 21, on this conductive film 14, one first propping material 18 is deposited on the conductive film 14, wherein, this first propping material 18 can be copper metal material or macromolecular material, and its depositional mode can be modes such as sputter, evaporation, electroforming or coating.
(M) shown in Fig. 2 m, remove to hinder the 3rd shielding layer 17, make to form in this first propping material 18 and remove the formed recess 19 in back by the 3rd shielding layer 17.
(N) shown in Fig. 2 n, deposition one first electroforming material 21 in the recess 19 of this first propping material 18, wherein this first electroforming material 21 can be the nickel metal.
(O) shown in Fig. 2 o, the top layer of this first electroforming material 21 and first propping material 18 is flattened simultaneously.
(P) shown in Fig. 2 p, on first electroforming material 21 above the breach 111, be coated with one the 4th shielding layer 22 in the position, be to produce patterned the 4th shielding layer 22 of this tool with existing micro image etching procedure.
(Q) shown in Fig. 2 q, lay a sacrifice layer 23 with depositional mode in top layer, wherein this sacrifice layer 23 can be titanium.Wherein depositional mode can be modes such as sputter, evaporation, plating.
(R) shown in Fig. 2 r, remove the 4th shielding layer 22, only make uncoated sacrifice layer 23 above first electroforming material 21 of position in this breach 111.
(S) shown in Fig. 2 s, coating one is continuously and have the 5th shielding layer 24 of opening between these first electroforming material, 21 tops again.
(T) shown in Fig. 2 t, in the opening of the 5th shielding layer 24, lay one second propping material 25 in the mode of electroforming in top layer.
(U) shown in Fig. 2 u, remove the 5th shielding layer 24.
(V) shown in Fig. 2 v, deposition one second electroforming material 26 in removing the formed groove in the 5th shielding layer 24 backs, and with this second electroforming material 26 and these second propping material, 25 grinding levelings.
(W) shown in Fig. 2 w, on top layer, lay one the 6th shielding layer 27, and the 6th shielding layer 27 be formed with opening with respect to the second place and the 3rd position part.
(X) shown in Fig. 2 x, deposition one jointing metal layer 28 in this opening of the 6th shielding layer 27.Wherein this jointing metal layer 28 can by one or several metal materials that possess good adhesion made, and this jointing metal layer 28 also can be made of single or several layers of material.The depositional mode of this jointing metal layer 28 can be gimmicks such as evaporation, sputter or plating.
(Y) shown in Fig. 2 y, remove to hinder the 6th shielding layer 27.
(Z) shown in Fig. 2 z, lay one the 7th shielding layer 29 in 28 on the jointing metal layer of the jointing metal layer 28 of this second place and the 3rd position, and the 7th shielding layer 29 and in the ora terminalis that slightly is covered in each jointing metal layer 28.
(AA) shown in Fig. 2 aa, deposit one the 3rd propping material 31.
(BB) shown in Fig. 2 bb, remove the 7th shielding layer 29.
(CC) shown in Fig. 2 cc, in the 3rd propping material 31, deposit one the 3rd electroforming material 32 in the formed shrinkage pool in removing the 7th shielding layer 29 backs, and ground leveling the 3rd propping material 31 and the 3rd electroforming material 32 upper surfaces.
(DD) shown in Fig. 2 dd, heavily cover (Z) to (C1) processing procedure several times, be stacked to predetermined height to electroforming material.
(EE) shown in Fig. 2 ee, remove each propping material, just can get embedded type micro contact element.Shown in Fig. 2 ff, be the stereographic map of the embedded type micro contact element after being shaped.With conductive film 14 etching offs, just the embedded type micro contact element after being shaped can be separated with its base version again.
Specify that at this first to the 7th above-mentioned shielding layer is can be made by photoresist.
Shown in Fig. 2 ff, this embedded type micro contact element 100 has one by the formed cantilever 41 of electroforming material, and this cantilever 41 can define one first long side 411 and second long side 412 back on this first long side 411; One is connected in these cantilever 41 first long sides, 411 1 ends and is the needle point pedestal 42 that extends in vertical direction with this cantilever 41; One is formed at the needle tip 43 that is taper on these needle point pedestal 41 free ends; Two engage assisted parts 44 with this needle tip 43 extends in the same way, and this respectively to engage assisted parts 44 be to be positioned on the other end of this first long side 411; One Embedded Division 45 is to extend on this second long side 412, and is positioned on the extension line of 44 of this two joints assisted parts; Two junction surfaces 46 are to be formed on the dual-side of this Embedded Division 45.
Wherein, this cantilever 41 also can be made of the multiple layer metal layer, can make this metal cantilever possess good electrical conductivity and anti-mechanical fatigue characteristic simultaneously.
In addition, also can be in the processing procedure that this cantilever forms, change with or add the polysilicon material of electricity slurry enhanced chemical vapor deposition (PECVD) deposition, because of the polysilicon material possesses good resistance mechanical fatigue characteristic, the shortcoming that can supply general satisfactory electrical conductivity metal.
Moreover, also can make signal transmission skin possess the above insulation shielding layer of one deck and the conductive layer of a ground connection in this cantilever outer stack metal and dielectric material, maybe this cantilever is made with macromolecular material.
Seeing also Fig. 3 a to Fig. 3 k, is the manufacture method that the present invention's second preferred embodiment provides a kind of embedded type micro contact element pedestal 200, and its step includes:
(A) shown in Fig. 3 a, get a silica-based version 51, and the inside of this silica-based version 51 has also formed a silicon dioxide interlayer 56 (SI02) by the mode by deposition, on this top of silica-based edition 51, bottom surface, lay one first shielding layer 52 respectively again, this first shielding layer 52 is to can be materials such as silicon dioxide, photoresist, silicon nitride or aluminum metal, and this first shielding layer 52 can be laid by the lithographic process in the manufacture of semiconductor.Wherein this includes the silica-based version 51 of silicon dioxide interlayer 56, is to form by by a silicon dioxide layer Silicon Wafer of two monocrystalline being bonded with each other.
(B) shown in Fig. 3 b, laying one possesses second shielding layer 53 of graphical opening on first shielding layer 52 of these silica-based version 51 end faces.This second shielding layer 53 can be photoresist.
(C) shown in Fig. 3 c,, make first shielding layer 52 that is arranged in second shielding layer, 53 openings by etching off with first shielding layer 52 of reactive ion etch (RIE) end face; And after etching, this second shielding layer 53 is removed.
(D) shown in Fig. 3 d, on this silica-based version 51, lay patterned the 3rd shielding layer 54.Laying patterned the 3rd shielding layer routine package contains:
Prior to being coated with one by silicon dioxide on these silica-based version 51 end faces, photoresist, the original continuous layer that silicon nitride or aluminum metallic material constituted, on the precalculated position that desire stays this original continuous layer, lay a cover layer again, and carry out reactive etching and will be covered the original continuous layer that covered of layer and remove, and behind the original continuous layer of removing the precalculated position, should cover layer removes, only stay the original continuous layer that is laid on the silica-based version precalculated position, make it become the 3rd shielding layer that possesses graphical opening, therefore only be discussed slightly slightly because this processing procedure that forms graphical the 3rd shielding layer is to be prior art.
(E) shown in Fig. 3 e, first shielding layer 52 of graphical silica-based version 51 bottom surfaces, in other words, first shielding layer 52 that is about to these silica-based version 51 bottom surfaces forms a breach.
(F) shown in Fig. 3 f, on these silica-based version 51 end faces, lay one the 4th shielding layer 55, and the 4th shielding layer 55 is formed with the opening of an opening subtend in 54 of the 3rd shielding layers, promptly the opening of the 4th shielding layer 55 directly is communicated with this silicon substrate 51.The 4th shielding layer can be laid by the lithographic process in the manufacture of semiconductor.
(G) shown in Fig. 3 g, the silica-based version 51 so that the ion etching of induction coupled plasma is not covered by the 4th shielding layer 55 till silicon dioxide interlayer 56 exposes, makes these silica-based version 51 end faces form an embedded groove 511.
(H) shown in Fig. 3 h, be positioned at the silicon dioxide interlayer 56 of this embedded groove 511 with reactive ion etching, and remove the 4th shielding layer 55.
(I) shown in Fig. 3 i, with the silica-based version 51 of induction type electricity slurry ion etching, the embedded groove 511 of silica-based version 51 is added be deep to a predetermined degree of depth, and silica-based version 51 end faces are not subjected to the first and the 3rd shielding layer 52,54 positions that covered also to be subjected to etching, till silicon dioxide interlayer 56 exposes, be formed with a tank 512 and make on this end face of silica-based edition 51.
(J) shown in Fig. 3 j, the 3rd shielding layer 54 and the silicon dioxide interlayer 56 that exposed are afterwards removed with reactive ion etch.
(K) shown in Fig. 3 k, end face with the silica-based version 51 of induction type electricity slurry ion etching, make the apical margin periphery of this embedded groove 511 form an engaging groove 513, this embedded groove 511 and the degree of depth of this tank 512 are deepened, and wherein this embedded groove 511 is to its bottom surface from this end face eating thrown of silica-based edition 51.
So just finish the processing procedure of embedded type micro contact element pedestal 200, see also shown in Figure 4ly, be the stereographic map of this pedestal 200.
Certainly, as shown in Figure 5, pedestal 200 also can make this pedestal 200 become the circuit board that a surface possesses the assembling groove by by make the required groove of assembling on the base version of finishing wiring on existing ceramic base platemaking technology and the organic material base version with Machining Technology.Also can pile up the surface above ceramic base version or organic material base version at the collocation semiconductor technology is more can include wiring 62 in ceramic base version or organic material base version by the positioning architecture 61 of dielectric property.
See also Fig. 6 to Fig. 7, it is the combination of 200 of the 3rd preferred embodiment embedded type micro contact element 100 provided by the present invention and embedded type micro contact element pedestals, please consult Fig. 6 earlier, at first the Embedded Division 45 with this embedded type micro contact element 100 directly penetrates in this embedded groove 511 in the engaging groove 513 by this embedded type micro contact element pedestal 200, utilize welding manner to engage with embedded type micro contact element pedestal 200 on jointing metal layer 28 simultaneously, by the media of jointing metal layer 28 as this embedded type micro contact element 100 and 200 electric connections of this embedded type micro contact element pedestal.See also Fig. 7 again, utilize etching that the sacrifice layer 23 of this embedded type micro contact element 100 is removed again, its base version 11 is reached to separate with cantilever 41 and needle tip 43 with assist in engagement portion 44.
Thus, embedded type micro contact element 100 just can be partially submerged into the mode in this embedded type micro contact element pedestal 200, does firm combining with this embedded type micro contact element pedestal 200.
So far, embedded type micro contact element of the present invention, not only have between needle point and embedded type micro contact element pedestal and engage spots localization precision advantage of higher, its main contact is near top layer, and needle body conceals into the top layer, can not damage needle body in the time of can making maintenance change the pin operation, have the advantage of easy maintenance operation.Simultaneously, it is made that the cantilever of embedded type micro contact element of the present invention and needle point are all electric conductor, and the tolerance of its electric current is good.
Certainly, as shown in Figure 8, when Embedded Division 45 curtailments of embedded type micro contact element run through the groove 511 of embedded type micro contact element pedestal 200, can in the embedded groove 511 of embedded type micro contact element pedestal 200, fill a conductive material 63, enable the media that is communicated with external circuit 70 as this embedded type micro contact element 100.
Also can be as shown in Figure 9, when being provided with wiring 64 as these embedded type micro contact element pedestal 200 inside, then can be connected with this wiring 64 by the jointing metal layer 28 of embedded type micro contact element 100, with with external circuit 70 conductings, this moment, embedded groove 511 can select not run through the structure of the bottom surface of silica-based version 51, and its degree of depth is enough to hold Embedded Division 45 and gets final product.
See also Figure 10 to Figure 13, the Embedded Division 45 (as shown in figure 10) of embedded type micro contact element 100 wherein of the present invention, also can change and adopt to possessing flexible elastomer structure 45 ', 45 "; 45 (extremely shown in Figure 13); its elastic deformation direction will be perpendicular to base version plane as Figure 11; but this elastomer structure processing procedure can utilize the similar processing procedure of first preferred embodiment shown in Figure 2; pile up formation via multilayer electroforming and planarization step; just seldom give unnecessary details this elastic construction 45 ' at this, 45 "; 45 more can be further with the circuit in the external world to contact or juncture is done one and electrically led to.
See also Figure 14 to shown in Figure 17, the cantilever 41 of embedded type micro contact element 100 wherein of the present invention, also can by the cuboid of rigidity change into its stage casing be have the pivot structure 41 ', 41 that can adjust the cantilever rigidity ", 41 (as Figure 15 to shown in Figure 17); thus; too small or gauge is limited; and during the needle point deformation quantity of wishing to reach bigger; can accept under the situation that its needle point contact force diminishes, just can utilize cantilever to reach this purpose with pivot structure when spendable design area; Also can be by reduce the rigidity of whole cantilever design by pivot structure, the rigidity of adjusting the embedded type micro contact element of different size makes it reach consistent.
Claims (58)
1. the manufacture method of an embedded type micro contact element is characterized in that, step includes:
Get a base version, and on this base version, deposit a dielectric film;
Formation one has first shielding layer of opening on this dielectric film;
Remove the dielectric film in the opening;
Remove first shielding layer;
Base version position so that anisotropic etching is not covered by dielectric film makes this base version form a breach;
Remove dielectric film;
Be coated with a conductive film in the top layer of this base version;
Be coated with one second shielding layer in the top layer of this conductive film, and this second shielding layer is formed with the breach of an opening corresponding to this base version;
Film is strengthened in coating one on the conductive film that is arranged in this breach;
Remove second shielding layer;
On the local location of this conductive film, form patterned the 3rd shielding layer of a tool;
Coating one first propping material on this conductive film;
Remove to hinder the 3rd shielding layer, make in this first propping material and form some recesses;
In the recess of this first propping material, deposit one first electroforming material, and this first electroforming material and first propping material are ground leveling simultaneously;
On first electroforming material above this base version breach, be coated with one the 4th shielding layer in the position;
Deposit a sacrifice layer;
Remove the 4th shielding layer, only make uncoated this sacrifice layer above first electroforming material of position in this breach;
The 5th shielding layer that has opening in this first electroforming material top coating one;
Mode with electroforming forms one second propping material in the 5th shielding layer opening;
Remove the 5th shielding layer;
After removing the 5th shielding layer, in this second propping material, deposit one second electroforming material in the formed groove, and this second electroforming material and this second propping material are ground leveling simultaneously;
Lay the 6th shielding layer of the graphical opening of a tool;
Deposition one jointing metal layer in the opening of the 6th shielding layer;
Remove the 6th shielding layer;
Lay patterned the 7th shielding layer of a tool, and the 7th shielding layer slightly is covered in the ora terminalis of jointing metal layer;
Deposit one the 3rd propping material;
Remove the 7th shielding layer;
After removing the 7th shielding layer, deposition one the 3rd electroforming material in the formed shrinkage pool in the 3rd propping material, and ground the upper surface that flattens the 3rd propping material and the 3rd electroforming material;
Remove first, second and third propping material simultaneously;
Remove conductive film.
2. according to the manufacture method of the described embedded type micro contact element of claim 1, it is characterized in that described this dielectric film is a silicon nitride.
3. according to the manufacture method of the described embedded type micro contact element of claim 1, it is characterized in that described first to the 7th shielding layer is a photoresist.
4. according to the manufacture method of the described embedded type micro contact element of claim 1, it is characterized in that the mode of described laying first to the 7th graphical opening of shielding layer is an existing lithographic process in the manufacture of semiconductor.
5. according to the manufacture method of the described embedded type micro contact element of claim 1, it is characterized in that described this conductive film is a titanium.
6. according to the manufacture method of the described embedded type micro contact element of claim 1, it is characterized in that described this first to the 3rd propping material is the copper metal.
7. according to the manufacture method of the described embedded type micro contact element of claim 1, it is characterized in that described this first to the 3rd propping material includes macromolecular material.
8. according to the manufacture method of the described embedded type micro contact element of claim 1, it is characterized in that, is to form this first to the 3rd propping material by sputtering way.
9. according to the manufacture method of the described embedded type micro contact element of claim 1, it is characterized in that, is to form this first to the 3rd propping material by the evaporation mode.
10. according to the manufacture method of the described embedded type micro contact element of claim 1, it is characterized in that, is to form this first to the 3rd propping material by the electroforming mode.
11. the manufacture method according to the described embedded type micro contact element of claim 1 is characterized in that, is to form this first to the 3rd propping material by coating method.
12. the manufacture method according to the described embedded type micro contact element of claim 1 is characterized in that, described this sacrifice layer is a titanium.
13. the manufacture method according to the described embedded type micro contact element of claim 1 is characterized in that, the depositional mode of described this sacrifice layer is a sputtering way.
14. the manufacture method according to the described embedded type micro contact element of claim 1 is characterized in that, the depositional mode of described this sacrifice layer is the evaporation mode.
15. the manufacture method according to the described embedded type micro contact element of claim 1 is characterized in that, the depositional mode of described this sacrifice layer is for electroplating.
16. the manufacture method according to the described embedded type micro contact element of claim 1 is characterized in that, described this jointing metal layer comprises one and possesses the metal material of good adhesion to several.
17. the manufacture method according to the described embedded type micro contact element of claim 1 is characterized in that, described this jointing metal layer is made of one to several layers material.
18. the manufacture method according to the described embedded type micro contact element of claim 1 is characterized in that, the depositional mode of described this jointing metal layer is the evaporation mode.
19. the manufacture method according to the described embedded type micro contact element of claim 1 is characterized in that, the depositional mode of described this jointing metal layer is a sputtering way.
20. the manufacture method according to the described embedded type micro contact element of claim 1 is characterized in that, the depositional mode of described this jointing metal layer is a plating mode.
21. the manufacture method according to the described embedded type micro contact element of claim 1 is characterized in that, described should the base version be monocrystalline silicon.
22. the manufacture method according to the described embedded type micro contact element of claim 1 is characterized in that, described this dielectric film is to be deposited on this base version by the mode by the low pressure chemical vapor phase deposition.
23. the manufacture method according to the described embedded type micro contact element of claim 1 is characterized in that, the mode of described this dielectric film of removal is to utilize reactive ion etching.
24. the manufacture method according to the described embedded type micro contact element of claim 1 is characterized in that, described this reinforcement film has abrasion resisting, low characteristic of being stained with viscosity, satisfactory electrical conductivity.
25. the manufacture method according to the described embedded type micro contact element of claim 1 is characterized in that, the described film of should strengthening is the handcuffs metal.
26. the manufacture method according to the described embedded type micro contact element of claim 1 is characterized in that, described this first and the 3rd electroforming material is the nickel metal.
27. the manufacture method according to the described embedded type micro contact element of claim 1 is characterized in that, described this first to the 3rd electroforming material is the nickel metal.
28. an embedded type micro contact element is characterized in that, includes:
One cantilever, this cantilever can define one first long side and second long side back on this first long side;
One needle tip is to be connected in this first long side, one end and to be to extend in vertical direction with this cantilever to form;
One Embedded Division is that vertical extension of institute forms on this second long side.
29., it is characterized in that described this cantilever is made by the polysilicon material according to the described embedded type micro contact element of claim 28.
30., it is characterized in that described this cantilever is made by the monocrystalline silicon material according to the described embedded type micro contact element of claim 28.
31., it is characterized in that described this cantilever is made by dielectric material according to the described embedded type micro contact element of claim 28.
32., it is characterized in that described this cantilever is made by macromolecular material according to the described embedded type micro contact element of claim 28.
33., it is characterized in that the material of the property led and the material of good resistance fatigue strength are constituted described this cantilever simultaneously by possessing very according to the described embedded type micro contact element of claim 28.
34., it is characterized in that described this cantilever is piled up by the structure of several unlike materials to be formed according to the described embedded type micro contact element of claim 28.
35. according to the described embedded type micro contact element of claim 28, it is characterized in that, described this cantilever external packets is covered with the conductive layer of an insulation shielding layer and a ground connection so that the good signal capture-effect to be provided, and improves the signal quality via the transmission of cantilever inner materials.
36., it is characterized in that described this needle tip is to be taper according to the described embedded type micro contact element of claim 28, and be connected with this cantilever by the needle point pedestal that forms by body one by one.
37., it is characterized in that according to the described embedded type micro contact element of claim 28, more include two junction surfaces, be on the dual-side of this Embedded Division, to extend respectively and form.
38., it is characterized in that described this Embedded Division is for possessing flexible elastic body according to the described embedded type micro contact element of claim 28.
39., it is characterized in that described this cantilever stage casing includes the pivot structure that can adjust the cantilever rigidity according to the described embedded type micro contact element of claim 28.
40. the manufacture method of an embedded type micro contact element pedestal is characterized in that, step includes:
Include in one and to lay one first shielding layer on the silica-based Ban Ding bottom surface of a silicon dioxide interlayer;
Laying one possesses second shielding layer of graphical opening on first shielding layer of this silica-based version end face;
Etching is arranged in first shielding layer of the second shielding layer opening;
Remove second shielding layer;
On this silica-based version end face, lay the 3rd shielding layer of the graphical opening of a tool;
First shielding layer of graphical silica-based version bottom surface;
On this silica-based version end face, lay one the 4th shielding layer, and the 4th shielding layer is formed with an opening subtend in the opening of the 3rd shielding layer;
The silica-based version that etching is not covered by the 4th shielding layer till the silicon dioxide interlayer exposes, makes this silica-based version end face form an embedded groove;
Remove the 4th shielding layer, and etching is positioned at the silicon dioxide interlayer of this embedded groove;
The silica-based version of etching is deepened embedded groove, and silica-based version end face also is not subjected to etching till the silicon dioxide interlayer exposes in the position that covered of the first and the 3rd shielding layer, and makes this silica-based edition end face be formed with a tank;
Remove the 3rd shielding layer and the silicon dioxide interlayer that exposed afterwards;
The end face of the silica-based version of etching makes this groove apical margin periphery form an engaging groove, and the degree of depth of this embedded groove and tank is deepened.
41. the manufacture method according to the described embedded type micro contact element pedestal of claim 40 is characterized in that, described this includes the silica-based version of silicon dioxide interlayer, is to form by by this silicon dioxide layer the Silicon Wafer of two monocrystalline being bonded with each other.
42. the manufacture method according to the described embedded type micro contact element pedestal of claim 40 is characterized in that, described this first shielding layer is the silicon dioxide material.
43. the manufacture method according to the described embedded type micro contact element pedestal of claim 40 is characterized in that, described this first shielding layer is a photoresist.
44. the manufacture method according to the described embedded type micro contact element pedestal of claim 40 is characterized in that, wherein this first shielding layer is the silicon nitride material.
45. the manufacture method according to the described embedded type micro contact element pedestal of claim 40 is characterized in that, described this first shielding layer is the aluminum metal material.
46. the manufacture method according to the described embedded type micro contact element pedestal of claim 40 is characterized in that, described this second shielding layer is a photoresist.
47. the manufacture method according to the described embedded type micro contact element pedestal of claim 40 is characterized in that, described the 3rd shielding layer is the silicon dioxide material.
48. the manufacture method according to the described embedded type micro contact element pedestal of claim 40 is characterized in that, described the 3rd shielding layer is a photoresist.
49. the manufacture method according to the described embedded type micro contact element pedestal of claim 40 is characterized in that, described the 3rd shielding layer is the silicon nitride material.
50. the manufacture method according to the described embedded type micro contact element pedestal of claim 40 is characterized in that, described the 3rd shielding layer is the aluminum metal material.
51. the manufacture method according to the described embedded type micro contact element pedestal of claim 40 is characterized in that, described the 3rd shielding layer and first shielding layer are unlike material.
52. the manufacture method according to the described embedded type micro contact element pedestal of claim 40 is characterized in that, the laying mode of described this first and the 4th shielding layer is a lithographic process.
53. the manufacture method according to the described embedded type micro contact element pedestal of claim 40 is characterized in that, described this embedded groove is to silica-based version bottom surface from silica-based version end face eating thrown.
54. the package assembly of embedded type micro contact element and embedded type micro contact element pedestal is characterized in that, includes:
One embedded type micro contact element has a cantilever, a needle tip and an Embedded Division; This cantilever can define one first long side and second long side back on this first long side, this needle tip is to be connected in this first long side, one end and to extend in vertical direction with this cantilever to form, and this Embedded Division is that vertical extension of institute forms on this second long side;
One embedded type micro contact element pedestal has a base version, an embedded groove, a tank and an engaging groove; This tank is to extend a predetermined width and a distance downwards to form from end face one place of this base version, and this engaging groove is to extend downwards from another place of the end face of this base version to form, and this embedded groove is to extend downwards in the bottom of engaging groove institute to form; The Embedded Division of this embedded type micro contact element is penetrated in this embedded groove, and this cantilever then part is placed in this engaging groove, and the part that this cantilever is not placed in this engaging groove is suspended in this tank.
55. package assembly according to described embedded type micro contact element of claim 54 and embedded type micro contact element pedestal, it is characterized in that, be filled with a conductive material in the embedded groove of described this embedded type micro contact element pedestal, enable the media that is communicated with external circuit as this embedded type micro contact element.
56. package assembly according to described embedded type micro contact element of claim 55 and embedded type micro contact element pedestal, it is characterized in that described this embedded type micro contact element and embedded type micro contact element pedestal are by being stable on the element that possesses external circuit by this conductive material.
57. package assembly according to described embedded type micro contact element of claim 54 and embedded type micro contact element pedestal, it is characterized in that, described this embedded type micro contact element base interior is provided with some wirings, makes this embedded type micro contact element can be by being connected with this wiring and the circuit turn-on in the external world.
58. the package assembly according to described embedded type micro contact element of claim 57 and embedded type micro contact element pedestal is characterized in that, described this embedded type micro contact element pedestal possesses the circuit board of assembling groove for the surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510051674 CN1821788B (en) | 2005-02-16 | 2005-02-16 | Embedded type micro contact element and its producing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510051674 CN1821788B (en) | 2005-02-16 | 2005-02-16 | Embedded type micro contact element and its producing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1821788A true CN1821788A (en) | 2006-08-23 |
| CN1821788B CN1821788B (en) | 2010-05-26 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200510051674 Expired - Fee Related CN1821788B (en) | 2005-02-16 | 2005-02-16 | Embedded type micro contact element and its producing method |
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| Country | Link |
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| CN (1) | CN1821788B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102595826A (en) * | 2011-01-14 | 2012-07-18 | 和硕联合科技股份有限公司 | Electronic device |
| CN101311733B (en) * | 2007-05-24 | 2012-11-14 | 旺矽科技股份有限公司 | Electrical contact device manufacture method |
| CN101358999B (en) * | 2007-08-02 | 2013-04-24 | 木本军生 | Probe assembly |
| CN101614755B (en) * | 2008-06-24 | 2013-06-26 | 旺矽科技股份有限公司 | Integrative formed micro-stretching type spring needle |
| CN106990271A (en) * | 2015-12-16 | 2017-07-28 | 旺矽科技股份有限公司 | Micro-electromechanical probe, manufacturing method thereof and probe group structure |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3838381B2 (en) * | 1995-11-22 | 2006-10-25 | 株式会社アドバンテスト | Probe card |
| US6520778B1 (en) * | 1997-02-18 | 2003-02-18 | Formfactor, Inc. | Microelectronic contact structures, and methods of making same |
| US6255126B1 (en) * | 1998-12-02 | 2001-07-03 | Formfactor, Inc. | Lithographic contact elements |
-
2005
- 2005-02-16 CN CN 200510051674 patent/CN1821788B/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101311733B (en) * | 2007-05-24 | 2012-11-14 | 旺矽科技股份有限公司 | Electrical contact device manufacture method |
| CN101358999B (en) * | 2007-08-02 | 2013-04-24 | 木本军生 | Probe assembly |
| CN101614755B (en) * | 2008-06-24 | 2013-06-26 | 旺矽科技股份有限公司 | Integrative formed micro-stretching type spring needle |
| CN102595826A (en) * | 2011-01-14 | 2012-07-18 | 和硕联合科技股份有限公司 | Electronic device |
| CN102595826B (en) * | 2011-01-14 | 2014-10-15 | 和硕联合科技股份有限公司 | Electronic device |
| CN106990271A (en) * | 2015-12-16 | 2017-07-28 | 旺矽科技股份有限公司 | Micro-electromechanical probe, manufacturing method thereof and probe group structure |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1821788B (en) | 2010-05-26 |
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