|Numéro de publication||CN1821788 B|
|Type de publication||Octroi|
|Numéro de demande||CN 200510051674|
|Date de publication||26 mai 2010|
|Date de dépôt||16 févr. 2005|
|Date de priorité||16 févr. 2005|
|Autre référence de publication||CN1821788A|
|Numéro de publication||200510051674.5, CN 1821788 B, CN 1821788B, CN 200510051674, CN-B-1821788, CN1821788 B, CN1821788B, CN200510051674, CN200510051674.5|
|Exporter la citation||BiBTeX, EndNote, RefMan|
|Citations de brevets (3), Classifications (3), Événements juridiques (4)|
|Liens externes: SIPO, Espacenet|
嵌入式微接触元件及其制造方法 Embedded micro-contact device and manufacturing method
技术领域 Technical Field
 本发明是与微接触元件有关，更详而言之是指一种嵌入式微接触元件及其制造方法。  The present invention is concerned with micro-contact element, it is more detailed in terms of device and manufacturing method refers to an embedded micro-contact.
 在测试高密度或高速的电气装置如LSI或VLSI电路时，必须使用具有大量微接触元件探针的探针卡Probe Card,以通过由该微接触元件为一具有挠性且可提供电性连接的导电体特性，作为与待测试物间电气导通的元件，如作为LSI及VLSI晶片、半导体晶圆、晶片预烧、封装的半导体装置及印刷电路板的测试接触元件之用。  When the electrical device to test high-density or high-speed circuit such as LSI or VLSI, you must contact element having a large number of micro probe card probe Probe Card, through the micro-contact element is made of a flexible and can provide a electrically conductive properties of the connection, as the object to be tested between the electrically conductive elements, such as LSI and VLSI chips, semiconductor wafers, wafer burn-in, with a test contact element of the packaged semiconductor devices and printed circuit boards. 当然，微接触元件，亦可用以作为IC封装的IC引线之用。 Of course, the micro-contact element can also be used as an IC package IC lead purposes. 但，为便于后续的说明，其微接触元件主要是以作为探针卡的探针加以叙述。 However, for ease of subsequent description, which micro-contact member mainly used as a probe of the probe card be described.
 —般微接触元件因应其需求而有不同的态样，其中有一种为悬梁式微接触元件，悬梁式微接触元件由于具有较高的弹性，可容许与外物接触而产生偏移时仍能保持接通的状态。  - as micro-contact element in response to their needs and have a different kind of state, in which there is a decline of cantilever contact elements, cantilever micro contact element due to the high flexibility and an offset allowable contact with foreign objects remain to maintain the ON state.
 以探针而言，如美国专利第US6268015号的专利案，如图1所示，其是通过由微机电技术以沉积金属的方式堆层出探针的结构，或分别以沉积金属方式将各一单元制出后再以接合方式加以组装；接合组装制程的精度较光刻制程差，多次的接合将因累积数次对位误差造成针尖1的定位偏差放大或悬臂梁2与支柱3的接合点误差，进而造成针尖探测位置不佳与探针性能一致性降低等缺点。  In terms of the probe, as described in U.S. Patent No. Patent No. US6268015 case shown in Figure 1, which is made by MEMS technology way to deposit metal stack structure of the probe, or respectively to deposit metal Each unit prepared a way out and then assembled to engage manner; engaging assembly process accuracy than the lithography poor, many of engagement will be several times due to the accumulation of bit error caused by an enlarged positional deviation tip or cantilever 2 Pillar 3 junction error, thus resulting in poor detection of the position of the probe tip and decreased consistency of performance shortcomings.
 另有如美国公开第US20010012739号的专利案，其同样是通过由微机电技术以沉积金属方式制作出探针的结构，且其针尖是以焊接方式接合，而其支柱（即针底）是以打线方式在外部电镀金属强化支柱的结构，其以打线方式制作支柱不仅量产速度相当的缓慢，且制程繁复，需精确的精度加以控制使之制造困难。  Another such as US Patent Publication No. US20010012739 case, which is also by the MEMS technology to deposit metal manner, a structure of the probe, and the welding tip is engaged, and its pillars (ie pin end) is a hit-line in the outer plating metal reinforcing structure pillar, which to hit line production pillar not only the production speed is quite slow and complicated process required precise accuracy to make it make it difficult to control.
 再如美国专利第US6399900号的专利案，亦是由微机电技术以沉积方式制作探针结构，其针尖以焊接方式与针体一端接合，针体的另一端则与基版的表面贴附接合，其稳固性较差，于反覆操作下可能因材料疲劳而产生与基版脱离的情事，且针尖需以相当精准方式焊接，如有焊接位置上的偏移将导致针尖接触力的不均匀。  Another example is US Patent No. US6399900 patent case number, also by way of MEMS technology for the production of probes deposited structure by welding tip engagement with the needle end, the other end of the needle and the surface of the base plate attaching engagement, its stability is poor, probably due to material fatigue arising from the base version of the circumstances under repeated operations, and the need to tip quite accurate way welding, welding position if offset will cause the tip contact force uneven.
 再者，如美国专利第US6414501号专利案，其是通过由微机电技术以蚀刻硅基材的方式加以制造探针，并于探针的外部镀上导电薄膜后再与基版接合；但，探针部分大部分由硅基材制成，导电薄膜的厚度相当的薄，仅涂布硅基材所制成的探针结构表面，因此其电流的耐受性不高无法符合高流量的需求，且由于探针的挠性结构主要以单晶硅为其材料，容易脆裂而无法修复。  Furthermore, as described in U.S. Patent No. US6414501 patent case, which is by the MEMS technology to etch silicon substrate manner of manufacturing the probe and the probe of the external plating on the conductive film and the base version before joining ; however, most part of the probe is made of a silicon substrate, corresponding to the thickness of the conductive thin film, only the structure of the surface of a substrate made of a silicon probe coated, so the resistance is not high current can not meet the high traffic demand, and because of the flexible structure of the probe mainly for single-crystal silicon material, easy to rattle and can not be repaired.
 其次，以美国专利第US4961052、 US5172050、 US5723894号的专利案而言，其皆是以直接蚀刻硅基版的方式，以单晶硅材质制作出探针，再于由硅基版所制成的探针外镀上一导电薄膜以提供电气连接；但，由于导电薄膜无法耐受高流量的需求，且探针主要以单晶硅为其材料，有容易脆裂无法修复的缺点。  Secondly, the United States Patent No. US4961052, US5172050, US5723894 number of patent cases, its all based on direct etching the silicon version of the way to produce single crystal silicon material probe, and then at the silicon-based version of the The probe is made of a conductive thin film on the outer coating to provide electrical connections; however, since the conductive film can not tolerate high traffic demand, mainly in the single-crystal silicon and the probe for material, there is likely to rattle the shortcomings can not be repaired.
3 另外，以美国专利第US5974662号专利案，是一种平面调整机构，其是可于组装时利用若干平面的微调使之进行水平的调整，且为使得于调整时所有的电路仍能保持良好的接触状态，必须在探针与电子基版间增加若干层的弹性探针；但，由于此结构过于复杂且线路的传输路径较长并不适用于高频的传输。 3  In addition, US Patent No. US5974662 patent case, a plane adjusting mechanism, which is available to fine-tune several planes at the time of assembly so as to adjust the level, and so on all the circuits are still adjustments can maintain a good contact state, the probe must be increased several elastic layers between the probe and the electronic version of the group; however, since this structure is too complicated and long lines of the transmission path is not applicable to high-frequency transmission.
 有鉴于此，本发明的主要目的乃在提供一种嵌入式微接触元件及其制造方法，是  In view of this, the main object of the present invention is to provide an embedded micro-contact device and manufacturing method, is
可使针尖位置与接合部位的定位基准相同，以单次接合方式使整体组装精度提高，增进整体性能一致性。 The same position with the joint can pinpoint positioning reference, joining in a single way to improve the overall assembly accuracy, enhance overall performance consistency.
 本发明的另一目的乃在提供一种嵌入式微接触元件及其制造方法，其微接触元件  Another object of the present invention is to provide an embedded micro-contact device and manufacturing method, micro contact element
是由一体成型，精度较高。 It is formed by an integral, high precision.
 本发明的再一目的乃在提供一种嵌入式微接触元件及其制造方法，其微接触元件是嵌入于基版中，可提供较佳的支撑力及提供辅助定位效果。  A further object of the present invention is to provide an embedded micro-contact device and manufacturing method, micro-contact element is embedded in the base version, it provides better support force and provide additional positioning effect.
 本发明的又一目的乃在提供一种嵌入式微接触元件及其制造方法，其微接触元件的电流耐受性较大。  Another object of the present invention is to provide an embedded micro-current contact element and its manufacturing method, micro contact element greater tolerance.
 本发明的次一目的乃在提供一种嵌入式微接触元件及其制造方法，其探针具有高导电性及抗疲劳性。  A second object of the present invention is to provide an embedded micro-contact device and manufacturing method, the probe has a high electrical conductivity and resistance to fatigue.
 本发明的下一目的乃在提供一种嵌入式微接触元件及其制造方法，其微接触元件的信号传输较短，利于高频传输。  The next object of the present invention is to provide an embedded micro-contact device and manufacturing method, the signal transmission micro contact element is short, beneficial frequency transmission.
 为达上述目的，本发明所提供一种嵌入式微接触元件，是通过由微机电制程所制成，该嵌入式微接触元件包含有：一悬臂，该悬臂可界定出一第一长侧边及一背向于该第一长侧边的第二长侧边；一针尖部，是连接于该第一长侧边一端且呈与该悬臂呈垂直方向延伸而成；一嵌入部，是自该第二长侧边上所垂直延伸而成。  To achieve the above object, the present invention provides an embedded micro-contact element, is made by the MEMS process, the embedded micro-contact element comprising: a boom having to define a first long side side and a back to the first long side of a second long sides; a tip portion is connected to the first end of the long sides and showed extends from the boom in a vertical direction; a fitting portion, is Since on the second long side of the vertically extending from.
 为能对本发明的特征及目的有更进一步的了解与认同，兹列举以下较佳的实施例，并配合附图说明于后。  to be able to features and objects of the invention have a better understanding and recognition, hereby include the following preferred embodiments, and with the accompanying drawings illustrate the post.
附图说明 Brief Description
 图 1是一种现有的探针结构示意图；  FIG. 1 is a schematic structural view of a prior probe;
 图 2a至图2ff是本发明第一较佳实施例的制造流程示意图  Figures 2a 2ff is the manufacturing process of the first preferred embodiment of the present invention schematic
 图 3a至图3k是本发明第二较佳实施例的制造流程示意图;  Figures 3a-3k is a manufacturing process of the present invention, a schematic view of a second preferred embodiment;
 图 4是本发明第二较佳实施例的立体图；  FIG. 4 is a perspective view of a second preferred embodiment of the present invention;
 图 5是图4所示另一实施态样的立体图；  FIG. 5 is a diagram of another embodiment shown in perspective view in FIG 4 aspect;
 图 6至图7是本发明第三较佳实施例的组装流程示意图；  FIG. 6 to 7 are assembling process of the present invention is a schematic diagram of a third preferred embodiment;
 图 8是本发明第四较佳实施例的示意图；  FIG. 8 is a schematic diagram of a fourth preferred embodiment of the present invention;
 图 9是本发明第五较佳实施例的示意图；  FIG. 9 is a schematic view of a fifth preferred embodiment of the present invention;
 图 10是本发明第一较佳实施例的示意图；  FIG. 10 is a diagram showing a first preferred embodiment of the present invention;
 图 11至图13是本发明不同实施态样的示意图；  Figures 11 to 13 is a different aspect of the present invention, a schematic embodiment;
 图 14是本发明第三较佳实施例的立体图；  FIG. 14 is a perspective view of a third preferred embodiment of the present invention;
 图 15至图17是本发明不同实施例态样的示意图。  FIG 15 to FIG 17 is a different embodiment of the present invention, a schematic embodiment aspect. 具体实施方式 DETAILED DESCRIPTION
 请参阅图2a至图2ff，是本发明第一较佳实施所提供嵌入式微接触元件的制造方法，其步骤包含有：  Please refer to FIG. 2a to FIG 2ff, is a manufacturing method of the first preferred embodiment of the present invention provides an embedded micro contact element, comprising the steps of:
 (A)如图2a所示，取一基版ll，此一基版11为单硅晶版。  (A) shown in Figure 2a, take a base version ll, this base version 11 is a single silicon crystal version.
 (B)如图2b所示，于基版ll上沉积一介电薄膜12。  (B) shown in Figure 2b, in the base version of the dielectric film 12 is deposited ll. 该介电薄膜12为一种由氮化硅材质所制的薄膜，是可通过由低压化学气象沉积（LPCVD)的方式涂布于上。 The dielectric film 12 of silicon nitride as a material prepared by a thin film is formed by coating by a low pressure chemical vapor deposition (LPCVD) on the way.  (C)如图2c所示，于该介电薄膜12上涂布一第一遮蔽层13，并使该第一遮蔽层13形成一开口，即进行微影蚀刻制程半导体制程中的光刻制程。  (C) shown in Figure 2c, a first light-shielding coating layer 13 on the dielectric film 12, and the first shielding layer 13 is formed an opening, namely, photolithography etching process in the semiconductor manufacturing process lithography.
 (D)如图2d所示，去除开口中的介电薄膜12。  (D) shown in Figure 2d, the removal opening 12 in the dielectric film. 其去除方式可利用反应性离子蚀刻(RIE)。 Mode can be removed by reactive ion etching (RIE).
 (E)如图2e所示，去除第一遮蔽层13并以非等向性蚀刻，如氢氧化钾（K0H)，对未受介电薄膜12所覆盖的基版11部位进行蚀刻加工，使该基版11形成有一呈倒金字塔型的  (E) shown in Figure 2e, removing the first masking layer 13 and anisotropic etching, such as potassium hydroxide (K0H), on the dielectric film were not covered by the portion of the base 12 version 11 is etched processing, so that the base version 11 is formed with a inverted pyramid
缺nm。 Lack nm.
 (F)如图2f所示，去除介电薄膜12。  (F) as shown in Figure 2f, the dielectric film 12 is removed. 可利用热磷酸蚀刻制程或反应性离子蚀刻制 You can use hot phosphoric acid etching process or a reactive ion etch
程（RIE)去除介电薄膜12，蚀刻材料及条件经过选择，并不会对基版有任何影响。 Cheng (RIE) to remove the dielectric film 12 is etched through the choice of materials and conditions, the base version will not have any effect.
 (G)如图2g所示，于该基版11的表层涂布一导电薄膜14。  (G) as shown in FIG 2g, was applied to the surface 11 of the base version of a conductive thin film 14. 其中该导电薄膜的材 Wherein the material of the conductive film
料可为钛金属，而涂布导电薄膜14的方式可通过由沉积方式如溅镀、蒸镀与电镀等方式加 Material for titanium metal, and coated with a conductive film 14 can be produced by way of deposition methods such as sputtering, evaporation and plating, etc. plus
以完成。 To finish.
 (H)如图2h所示，于该导电薄膜14的表层涂布一第二遮蔽层15，且该第二遮蔽层15形成有一对应于该基版11缺口111的开口。  (H) as shown in Figure 2h, on the surface coated with a conductive thin film layer 14 of the second shutter 15, and the second shielding layer 15 is formed in a corresponding notch in the base version of the 11 opening 111.
 (I)如图2i所示，于该第二遮蔽层15及该位于该缺口111中的导电薄膜14上涂布一至数层的强化薄膜16。  (I) shown in FIG. 2i, to the second shielding layer 15 is located in the notch 111 and the conductive film 14 coated with a thin film 16 to the number of reinforcing layers. 该强化薄膜16具有抗磨耗、低沾粘性、良好导电性的特性，如铑金属。 The reinforcing film 16 with anti-wear, low sticking properties, good electrical conductivity properties, such as rhodium metal.
 (J)如图2j所示，去除第二遮蔽层15。  (J) as shown in Figure 2j, a second masking layer 15 is removed. 该第二遮蔽层15可通过由蚀刻的方式去除，涂布于该第二遮蔽层15上的强化薄膜16亦一并去除。 The second shielding layer 15 may be removed by the etching by the way, also be applied to the removal of 15 to strengthen the film 16 on the second shielding layer.
 (K)如图2k所示，于该导电薄膜14的局部位置上形成一第三遮蔽层17。  (K) as shown in Fig. 2k, forming a third masking layer 17 to the conductive film 14 on the local position. 其中该第三遮蔽层17是形成于该缺口111上及同一侧的两局部位置上。 Wherein the third shielding layer 17 is formed in two parts 111 and the position of the notch on the same side.
 (L)如图21所示，在该导电薄膜14上将一第一支撑材料18沉积于导电薄膜14上，其中，该第一支撑材料18可为铜金属材料或高分子材料，而其沉积方式可为溅镀、蒸镀、电铸或涂布等方式。  (L) shown in Figure 21, the conductive film 14 will be a first support material 18 is deposited on the conductive film 14, wherein the first support material 18 may be a copper material or a polymer material, The mode can be deposited by sputtering, evaporation, coating, casting or other means.
 (M)如图2m所示，去阻第三遮蔽层17，使该第一支撑材料18中形成出由第三遮蔽层17去除后所形成的凹口19。  (M) as shown in Figure 2m, to the third barrier shielding layer 17, so that the first support member 18 to form a recess after removing the third masking layer 17 is formed by the 19.
 (N)如图2n所示，于该第一支撑材料18的凹口19中沉积一第一电铸材料21，其中该第一电铸材料21可为镍金属。  (N) shown in FIG. 2n, 19 of the recess 18 of the first electroformed depositing a material 21 to the first support material, wherein the first material 21 may be electroformed nickel metal.
 (0)如图2o所示，将该第一电铸材料21与第一支撑材料18的表层同时加以整平。  (0) as shown in Figure 2o, the cast material 21 and the first surface of the support material 18 to the first power while leveling.  (P)如图2p所示，于位在缺口111上方的第一电铸材料21上涂布一第四遮蔽层22，是以现有的微影蚀刻制程产生该具图形化的第四遮蔽层22。 A fourth shielding layer 22, based on existing lithography etching process to produce  (P) as shown in Figure 2p, in the position at the top of the notch 111 of the first electroformed material 21 is coated with the graphical tool The fourth masking layer 22.
 (Q)如图2q所示，以沉积方式于顶层布设一牺牲层23，其中该牺牲层23可为钛金属。  (Q) as shown in Figure 2q, to deposit a sacrificial manner in laying the top layer 23, in which the sacrificial layer 23 may be titanium. 其中沉积方式可为溅镀、蒸镀、电镀等方式。 Which may be a sputtering deposition method, vapor deposition, plating, etc..
 (R)如图2r所示，去除第四遮蔽层22，使仅位在该缺口111中的第一电铸材料21 上方未涂布牺牲层23。  (R) as shown in Figure 2r, fourth masking layer 22 is removed, so only place in the notch 111 in the top 21 of the first electroformed material uncoated sacrificial layer 23.
 (S)如图2s所示，再于该第一电铸材料21上方间涂布一连续并具有开口的第五遮蔽层24。  (S) as shown in FIG 2s, then cast in between the first electrode 21 above the coating material and a continuous shielding layer 24 having a fifth opening.
 (T)如图2t所示，于顶层以电铸的方式于该第五遮蔽层24的开口中布设一第二支撑材料25。  (T) as shown in Figure 2t, on the top floor with electroforming opening the way to the fifth shielding layer 24 in a second support material 25 is laid.
 (U)如图2u所示，去除第五遮蔽层24。  (U) as shown in Figure 2u, fifth masking layer 24 is removed.
 (V)如图2v所示，于去除第五遮蔽层24后所形成的凹槽中沉积一第二电铸材料26，并将该第二电铸材料26与该第二支撑材料25研磨整平。  (V) as shown, in the shielding layer is removed after the fifth groove 24 formed in a second deposition 2v electroforming material 26, and the second electroformed material 26 and the second support material 25 grinding leveling.
 (W)如图2w所示，于顶层上布设一第六遮蔽层27，且该第六遮蔽层27的相对于第二位置与第三位置之处形成有开口。  (W) as shown in FIG 2w, laid on top of a sixty-shielding layer 27, and the sixth shielding layer 27 at a second position relative to the position of the third opening is formed.
 (X)如图2x所示，于该第六遮蔽层27的该开口中沉积一接合金属层28。  (X) as shown in Fig 2x, depositing a metal layer 28 is bonded to the sixth shielding layer 27 in the opening. 其中该接合金属层28可由一或数种具备良好附着性的金属材质所制成，且该接合金属层28亦可由单一或数层材质所构成。 Wherein the bonding metal layer 28 may be one or several species have good adhesion to the metal material made, and the bonding metal layer 28 may also be composed of a single or several layers of material of the composition. 该接合金属层28的沉积方式可为蒸镀、溅镀或电镀等手法。 The bonding metal layer deposition pattern 28 may be vapor deposition, sputtering or plating technique.  (Y)如图2y所示，去阻第六遮蔽层27。  (Y) as shown in Fig 2y, sixth shielding layer 27 to the barrier.
 (Z)如图2z所示，于该第二位置的接合金属层28及该第三位置的接合金属层28 间布设一第七遮蔽层29，且该第七遮蔽层29并于略为覆盖于各接合金属层28的端缘。  (Z) as shown, in the second bonding metal layer 28 and the position of bonding metal layer 28 to the third position 2z laid a seventh shielding layer 29, and the shielding layer 29 and on the seventh slightly covering the edge of each bonding metal layer 28.  (AA)如图2aa所示，沉积一第三支撑材料31 。  (AA) shown in FIG. 2aa, a third support material 31 is deposited.  (BB)如图2bb所示，去除第七遮蔽层29。  (BB) as shown in Figure 2bb removed seventh shielding layer 29.
 (CC)如图2cc所示，于去除第七遮蔽层29后在第三支撑材料31中所形成的凹孔中沉积一第三电铸材料32，并加以研磨整平第三支撑材料31与该第三电铸材料32上表面。  (CC) as shown, for removing a seventh concave hole 29 after the third shielding layer 31 formed in the support material is deposited in a third electroforming 2cc material 32, and is ground leveling third support Materials 31 and 32 on the third electroforming surface material.  (DD)如图2dd所示，重覆（Z)至（Cl)制程若干次，至电铸材料堆叠至预定的高度。  (DD) as shown in FIG. 2dd, repeat (Z) to (Cl) process several times, until the electroforming material stacked to a predetermined height.  (EE)如图2ee所示，去除各支撑材料，便可得嵌入式微接触元件。  (EE) as shown in Figure 2ee remove all support material, it can have an embedded micro-contact element. 如图2ff所示， 是成形后的嵌入式微接触元件的立体图。 FIG 2ff shown, is embedded after forming a micro perspective view of the contact element. 再将导电薄膜14蚀去，便可将成形后的嵌入式微接触元件与其基版分离。 Embedded then etched conductive film 14, it will be a micro-contact element after forming its base version of the separation.
 在此特别说明，上述的第一至第七遮蔽层是可由光阻材料所制成。  In this particular description, the above-described first to seventh shielding layer is formed by the photoresist.  如图2ff所示，该嵌入式微接触元件100具有一由电铸材料所形成的悬臂41，且该悬臂41可界定出一第一长侧边411及一背向于该第一长侧边411的第二长侧边412 ;—连接于该悬臂41第一长侧边411 一端且呈与该悬臂41呈垂直方向延伸的针尖基座42 ;—形成于该针尖基座41自由端上呈锥状的针尖部43 ;二与该针尖部43同向延伸的接合辅助部44，且该各接合辅助部44是位于该第一长侧边411的另一端上；一嵌入部45是自该第二长侧边412上所延伸，且位于该二接合辅助部44间的延伸线上；两接合部46是形成于该嵌入部45的两侧边上。  As shown in FIG 2ff, the embedded micro-contact 100 having a cantilever formed by the electroforming material 41, and the arm 41 may define a first long side 411 and a back to the first elongate member The second long side 411 side 412; - is connected to the first arm 41 and the long side was 411, and the end of the boom 41 vertically extending tip base 42; - the base 41 is formed on the free end of the needle tip the tapered tip portion 43; two with 43 engaging with extending tip portion of the auxiliary unit 44, and the auxiliary unit 44 each engagement is on the other end of the long sides of the first 411; a fitting portion 45 is from the second side edge 412 extends long and is located in the second connecting portion 44 extending auxiliary line; two joint 46 is formed on both sides of the edge of the insert portion 45.
 其中，该悬臂41亦可由多层金属层所构成，可使该金属悬臂同时具备良好的导电性与抗机械疲劳特性。  wherein the cantilever 41 may also be constituted by a multi-layer metal layer, the metal arm at the same time can have a good electrical conductivity and resistance to mechanical fatigue properties.
 另外，亦可于该悬臂形成的制程中，改以或加入电浆增强式化学气相沉积（PECVD) 沉积的多晶硅材质，因多晶硅材质具备良好抗机械疲劳特性，可补足一般良好导电性金属的缺点。  In addition, the process can also be formed in the cantilever, changed or added to the plasma-enhanced chemical vapor deposition (PECVD) deposited polysilicon material, due to the polysilicon material with good resistance to mechanical fatigue properties, can complement the general good conductivity disadvantage of metal.  再者，亦可于该悬臂外层叠金属与介电材料，使信号传输外层具备一层以上的绝缘遮蔽层及一接地的导电层，或将该悬臂以高分子材料制成。  Furthermore, also in the cantilever outer laminate metal and dielectric material, so that the signal transmission with the outer layer of insulation over the shielding layer and a grounded conductive layer, or the boom in polymer materials.
 请参阅图3a至图3k，是本发明第二较佳实施例所提供一种嵌入式微接触元件基座200的制造方法，其步骤包含有：  Please refer to FIG. 3a to 3k, is a manufacturing method of the second preferred embodiment of the present invention provides an embedded micro base 200 of the contact elements, comprising the steps of:
 (A)如图3a所示，取一硅基版51，且该硅基版51的内部并已通过由沉积的方式形成一二氧化硅夹层56 (SI02)，再于该硅基版51的顶、底面上分别布设一第一遮蔽层52，该第一遮蔽层52是可为二氧化硅、光阻材料、氮化硅或铝金属等材料，该第一遮蔽层52可由半导体制程中的光刻制程所布设。  (A) shown in Figure 3a, take a silicon version 51, and the inside of the silicon substrate 51 and has adopted a version formed by the deposition of a silicon dioxide interlayer way 56 (SI02), and then to the silicon top plate 51, the bottom surface of each laid a first shielding layer 52, the first light-shielding layer 52 is silicon dioxide, photoresist, silicon nitride or aluminum metal and other materials, the first light-shielding layer 52 may be a semiconductor The process laid by lithography. 其中该包含有二氧化硅夹层56的硅基版51，是可通过由一二氧化硅层将两单晶的硅晶圆相互接合而成。 Wherein the silica comprises silicon interlayer 56 version 51, is composed of a silicon dioxide layer by two single crystal silicon wafers are joined together.
 (B)如图3b所示，于该硅基版51顶面的第一遮蔽层52上布设一具备图形化开口的第二遮蔽层53。  (B) shown in Figure 3b, the first shielding layer 52 on the silicon surface of the printing plate 51 includes a graphic layout of the opening 53 of the second shielding layer. 该第二遮蔽层53可为光阻材料。 The second shielding layer 53 may be a photoresist material.
 (C)如图3c所示，以反应式离子蚀刻（RIE)顶面的第一遮蔽层52，使位于第二遮蔽层53开口中的第一遮蔽层52被蚀去；并于蚀刻后将该第二遮蔽层53去除。  (C) shown in Figure 3c, to reactive ion etching (RIE) the top surface of the first shielding layer 52, so that the second shielding layer 53 located at the opening of the first shielding layer 52 is etched; and in After the etching the second shielding layer 53 removed.  (D)如图3d所示，于该硅基版51上布设一图形化的第三遮蔽层54。  (D) shown in Figure 3d, on the silicon Version 51 laid in a pattern of a third shielding layer 54. 布设图形化的第三遮蔽层程序包含有： Graphical layout program third shielding layer comprises:
 先于该硅基版51顶面上涂布一由二氧化硅、光阻材料、氮化硅或铝金属材料所构  prior to version 51 of the silicon surface coated with a silicon dioxide, photoresist, silicon nitride or aluminum material structure
成的原始连续层，再于欲将该原始连续层留下的预定位置上布设一罩层，并进行反应性蚀 Into the original continuous layer, and then to want a cap layer laid the original continuous layer of the predetermined position on the left, and the reaction of the eclipse
刻将未受罩层所遮覆的原始连续层去除，并于去除预定位置的原始连续层后，将该罩层去 After the unaffected engraved cover layer masking the original continuous layer is removed, and for the removal of the original continuous layer of a predetermined position, the cover layer to
除，仅留下布设在硅基版预定位置上的原始连续层，使其成为具备图形化开口的第三遮蔽 In addition, leaving only laid in a predetermined position on the silicon version of the original continuous layer, making it the third opening with a graphical shelter
层由于此形成图形化第三遮蔽层的制程乃为现有技术，因此仅略为稍作论述。 Because this layer is patterned masking layer of the third process is for the prior art, thus only slightly a little discussion.
 (E)如图3e所示，图形化硅基版51底面的第一遮蔽层52，换言之，即将该硅基版  (E) as shown in FIG. 3e, patterning the bottom surface 51 of the first version of the silicon masking layer 52, in other words, i.e. the silicon Edition
51底面的第一遮蔽层52形成出一缺口。 51 bottom surface of the first shielding layer 52 is formed out of a gap.
 (F)如图3f所示，于该硅基版51顶面上布设一第四遮蔽层55，且该第四遮蔽层55 形成有一开口对向于该第三遮蔽层54间的开口，即该第四遮蔽层55的开口直接与该硅基板51连通。  (F) as shown in Fig. 3f, on the surface of the silicon Version 51 laid a fourth shielding layer 55, and the fourth shielding layer 55 is formed with an opening opposing to the third inter-shielding layer 54 opening, that is, the fourth masking layer 55 opening direct communication with the silicon substrate 51. 该第四遮蔽层可由半导体制程中的光刻制程所布设。 The fourth shielding layer may be formed in the semiconductor manufacturing process laid by lithography.
 (G)如图3g所示，以感应耦合电浆离子蚀刻未受第四遮蔽层55所遮覆的硅基版51，直到二氧化硅夹层56暴露为止，使该硅基版51顶面形成出一嵌入槽511。  (G) as shown in FIG. 3g, inductively coupled plasma ion etching unaffected fourth shielding layer 55 masking silicon version 51, up until the exposed silicon dioxide interlayer 56, so that the silicon Edition 51 the top surface is formed out of a 511 fitted into the groove.  (H)如图3h所示，以反应性离子蚀刻位于该嵌入槽511内的二氧化硅夹层56，并去除第四遮蔽层55。  (H) as shown in Figure 3h, to the reactive ion etching of silicon dioxide interlayer 56 located in the insert within groove 511, and a fourth masking layer 55 is removed.
 (I)如图3i所示，以感应式电浆离子蚀刻硅基版51，使硅基版51的嵌入槽511加深至一预定的深度，且硅基版51顶面未受第一与第三遮蔽层52、54所遮覆的部位亦受蚀刻，直到二氧化硅夹层56暴露为止，而使该硅基版51的顶面上形成有一容槽512。  (I) shown in FIG. 3i, inductive plasma ion etching to a silicon version of 51, 511 so that fitting groove 51 of the silicon version deepened to a predetermined depth, and the silicon surface were not the first version 51 a shielding layer and third portions 52, 54 are also subject to masking etched until silicon dioxide interlayer 56 exposed so far, leaving the top surface of the silicon substrate 51 is formed with a version of the pockets 512.  (J)如图3j所示，以反应式离子蚀刻将第三遮蔽层54与后来暴露出的二氧化硅夹层56去除。  (J) as shown in Figure 3j, reactive ion etching in the third interlayer shielding layer 54 and silicon dioxide 56 is removed later exposed.
 (K)如图3k所示，以感应式电浆离子蚀刻硅基版51的顶面，使该嵌入槽511的顶缘周边形成出一接合槽513，同时使该嵌入槽511与该容槽512的深度加深，而其中该嵌入槽511是自该硅基版51的顶面蚀穿至其底面。  (K) as shown in FIG 3k to the top surface of the inductive plasma ion etching of the silicon version 51, so that the top edge of the fitting groove 511 is formed out of a periphery of the engaging groove 513, while the insert groove 511 and The depth deeper pockets 512, of which the insert groove 511 is etched from the top surface of the silicon version 51 through to its bottom surface.
 如此便完成嵌入式微接触元件基座200的制程，请参阅图4所示，即为该基座200 的立体图。  so complete embedded micro-contact element 200 of the base process, see Figure 4 is a perspective view of the pedestal 200.  当然，如图5所示，基座200亦可通过由在现有的陶瓷基版技术与有机材料基版上以机械加工技术在已完成电路布线的基版上制作组装所需的沟槽，使该基座200成为一表面具备组装沟槽的电路板。  Of course, as shown in FIG. 5, the base 200 may also be assembled by mechanical processing technology on a wiring substrate has been completed on the existing version of the production version of technical ceramic matrix material with an organic base version required grooves, so that the surface of the base 200 becomes a circuit board with the assembly grooves. 亦可在搭配半导体技术在陶瓷基版或有机材料基版上方堆叠出表面为介电特性的定位架构61，更可于陶瓷基版或有机材料基版中包含有电路布线62。 Also in semiconductor technology with a ceramic base plate or an organic material over the base version brings out the surface of the dielectric properties of the positioning framework 61, but may be included in a ceramic base plate or organic material base version with a circuit wiring 62.  请参阅图6至图7，是本发明所提供第三较佳实施例嵌入式微接触元件100与嵌入式微接触元件基座200间的结合方式，请先参阅图6，首先将该嵌入式微接触元件100的嵌入部45直接由该嵌入式微接触元件基座200的接合槽513中穿入于该嵌入槽511内，同时将接合金属层28与嵌入式微接触元件基座200利用焊接方式接合，由接合金属层28作为该嵌入式微接触元件100与该嵌入式微接触元件基座200电性连接的媒介。  See Figure 6 to 7, is embedded micro-contact element 100 and the base 200 of the third preferred embodiment of the binding mode embedded micro-contact element of the present invention provides, please refer to Figure 6, the first to embed the decline of the contact element is embedded portion 45,100 by the direct contact with the embedded micro base element engagement grooves 513 200 penetrates embedded within the tank 511, while the bonding metal layer 28 and the embedded micro-contact element engages the base 200 by welding , the bonding metal layer 28 as an intermediary for the embedded micro contact element 100 into contact with the micro-embedded element 200 is electrically connected to the base. 再请参阅图7，再利用蚀刻将该嵌入式微接触元件100的牺牲层23去除，使其基版11及与辅助接合部44可与悬臂41及针尖部43分离。 Referring again to FIG. 7, and then etching the embedded micro-contact element 23 of the sacrificial layer 100 is removed so that the base version of the 11 and 44 can be separated from the auxiliary junction 41 and the tip of the boom 43.
 如此一来，嵌入式微接触元件100便可以部分嵌入于该嵌入式微接触元件基座200中的方式，与该嵌入式微接触元件基座200作一稳固的结合。  Thus, embedded micro-contact element 100 can be partially embedded in the way the embedded micro-contact elements of the base 200, a strong combination with the embedded micro-contact element 200 as a base.
 至此，本发明的嵌入式微接触元件，不仅具有针尖与嵌入式微接触元件基座间接合部位定位精度较高的优点，其主要接点接近顶层，且针体隐入表层，可使维修换针操作时不会损伤针体，具有容易维修操作的优势。  Thus, the present invention embedded micro-contact element, not only has an embedded micro-contact element tip and the base portion of the positioning accuracy of the advantages of higher indirect cooperation, the main contacts close to the top, and the hidden needle into the skin, can repair exchange needle operation will not damage the needle, has the advantage of easy maintenance operations. 同时，本发明嵌入式微接触元件的悬臂与针尖皆为导电体所制成，其电流的耐受性良好。 Meanwhile, the present invention is embedded with micro-cantilever tip contacts the conductor member are all made, the current well tolerated.
 当然，如图8所示，当嵌入式微接触元件的嵌入部45长度不足贯穿嵌入式微接触元件基座200的凹槽511时，可于嵌入式微接触元件基座200的嵌入槽511中填充一导电材料63，使能作为该嵌入式微接触元件100与外部电路70连通的媒介。  Of course, as shown in Figure 8, when the lack of embedded micro contact element 45 is embedded throughout the length of the base when the contact elements embedded micro grooves 511 200, can be embedded micro-contact element fits into the groove 511 of the base 200 filled with a conductive material 63, so that can be used as an intermediary for the embedded micro-contact element 100 and the external circuit 70 connected.  亦可如图9所示，如该嵌入式微接触元件基座200内部已设有电路布线64时，则可由嵌入式微接触元件100的接合金属层28与该电路布线64连接，以与外部电路70导通， 此时嵌入槽511可选择不贯穿硅基版51的底面的结构，其深度足以容纳嵌入部45即可。 Bonding metal layer  is also shown in Figure 9, the embedded microprocessor 64 such as when the contact element has a base 200 with an internal circuit wiring can be embedded by the micro-contact member 100 is connected to the wiring 28 64, with the an external circuit 70 turns on, then embedded in the bottom surface of the groove 511 may choose not to penetrate the structure of the silicon version 51, which is deep enough to accommodate the embedded portion 45.  请参阅图10至图13，其中本发明的嵌入式微接触元件100的嵌入部45(如图10 所示），亦可改采为具备弹性的弹性体结构45'、45"、45"'(如图ll至图13所示），其弹性变形方向将垂直于基版平面，但该弹性体结构制程可利用图2所示第一较佳实施例的类似制程，经由多层电铸与平整化步骤堆叠构成，在此便不多作赘述，该弹性结构45'、45"、45"' 更可进一步与外界的电路以接触或接合方式做一电性通连。  Please refer to FIGS. 10 to 13, in which the present invention embedded micro-contact element is embedded portion 45 100 (Figure 10), can also be taken as a change with a resilient elastomeric structure 45 ', 45 ", 45 "'(as shown in Figure ll to FIG. 13), the elastic deformation direction perpendicular to plane of the base version, but the elastic structure can be used similar to the process of the first preferred embodiment of the process shown in Figure 2, via the electrical multi- Cast and planarization step stacked configuration, this will not get more say, the elastic structure 45 ', 45', 45 '' more further contact or engaging way to make an electrical circuit Tonglian with the outside world.
 请参阅图14至图17所示，其中本发明的嵌入式微接触元件100的悬臂41 ，亦可由刚性的矩形体改变为其中段呈具有可调整悬臂刚性的转枢结构41'、41"、41'"(如图15至图17所示），如此一来，当可使用的设计面积过小或厚度尺寸受限，且希望达到较大的针尖形变量时，在可接受其针尖接触力变小的情况下，便可利用具有转枢结构的悬臂来达成此一目的；亦可通过由转枢结构减少整体悬臂结构的刚性，调整不同尺寸的嵌入式微接触元件的刚性使其达到一致。  Please refer to FIG. 14 to FIG. 17, the present invention wherein the embedded micro-contact 41 of the boom member 100, may also be changed by a rigid rectangular body having its middle form rigid Hinge adjustable cantilever structure 41 ', 41 '41' '(shown in Figure 15 to 17), this way, that can be used when designing the area is too small or the thickness is limited, and you want to reach a larger tip deformation when the needle tip at acceptable Under the contact force becomes small, you can use the cantilever structure having a rotation pivot to achieve this purpose; rigid structure may also be adopted by a pivot turn reduce the overall rigidity of the cantilever structure, adjustment of different sizes embedded micro-contact element to reach agreement.
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|23 août 2006||C06||Publication|
|18 oct. 2006||C10||Request of examination as to substance|
|26 mai 2010||C14||Granted|
|18 avr. 2012||C17||Cessation of patent right|