CN1890845A - 具精确工作范围的小型阵列接触 - Google Patents
具精确工作范围的小型阵列接触 Download PDFInfo
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Abstract
一种安排在连接器元件阵列中的连接器元件之接触,同时具有所欲机械和电性质,如强健的工作范围所界定。一阵列节距较佳在约0.05mm至约1.27mm之范围,且较佳在约0.05mm至约1mm之范围。此接触包含一基部和一弹性可变形部,系从包含此基部之平面突出,且提供约0.0mm至约1.0mm之工作范围。
Description
本申请依35U.S.C.§120,主张下列通申请中且共让渡之专利申请:Dirk D.Brown等人于2003年12月8日申请之美国专利申请10/731,669号,名称为“A Connector for Making contact at Semiconductor Scales”;DirkD.Brown等人于2004年4月9日申请之PCT申请US2004/011074号,名称为“Electrical Connector and Method for Making”;以及Dirk D.Brown等人于2004年10月8日申请的美国专利号10/960,043,名称为“Small Arraycontact With Precision Working Range”。
技术领域
本发明大体系关于电连接器,尤其关于用以结合电子组件之弹性电连接器。
背景技术
用来连接如印刷电路板之组件的传统电连接器,系利用广泛种类之技术加以制造。常见方法之一系使用复数个模锻(stamped)金属弹簧,其形成后接着被个别插入一绝缘载体,以形成电连接元件的阵列。其他制作电连接器的方法包含使用非等向导电黏着剂、射出成型导电黏着剂、束线导电元件、以及小金属块。
当想要提高装置性能时,驱使封装技术朝向缩小各电连接器(亦称做“接脚(lead)”)间的间隔(或节距[pitch]),因此存在着缩小个别连接器元件尺寸的需求。同时,每个封装件的连接器总数一直在增加。举例而言,现有积体电路封装件可具有1mm或更小之节距,以及600或更多的连接。再者,积体电路装置系设计以于持续增高的频率操作。举例而言,使用在计算、电信通讯、以及网路应用的积体电路装置,可造作在几十亿赫(GHz)之频率。电子装置之操作频率、封装尺寸、以及装置封装的接脚数,对用来测试或连接这些电子装置的互连系统带来严厉的要求。
特别是互连系统之机械、电、和可靠度性能准则变得益发严苛。要用在高速、小尺寸和大量接脚数的积体电路装置的电和机械可靠度规格,会开出上述传统互连技术无法轻易满足之要求。一般而言,电性能最佳化的传统连接器系统具有不良的机械和可靠度性质,而机械性能最佳化和改良的可靠度的连接器系统具有不良的电特性。
近日的互连系统遭遇的特别问题是,欲连接的电子组件中接脚的不共面性(non-coplanarity)。举例而言,一平面封装件中元件的共面性存在于那些元件位在一共同参考几何平面时。于传统封装件中,导致封装件之连接器元件(或接脚)不共面性的因素包含制程差异和基板翘曲(warpage)。对安排为一阵列之传统连接器元件而言,封装件中各处的共面性差异可能超过连接器元件之垂直公差(tolerance),而导致一些元件中电连接失效。
共面性问题不限于积体电路封装件,亦可能存在于这些积体电路封装件要附接的印刷电路板中。共面性问题可能存在于一PC板上之一区域(area)阵列的基板栅格阵列垫(land grid array pads),此乃由于PC板基板翘曲。一般传统PC板中平坦度(flattness)之偏差,为每英寸75至125微米或更多的等级。
此外,电连接器阵列的电路板、封装、和其他组件中的平面性之偏差,常不随其他尺寸(如阵列间隔和连接器大小)的缩小而下降。因此,举例而言,电路板或其他具有小节距的元件,按触之位置甚至会产生大的垂直偏差。对连接器接触间的节距小于约2毫米的传统连接器而言,当节距下降,更难生产可弥补此类的共面性偏差,且仍要能实现可接受电接触特性(如低电阻和低电感)的弹性接触。
附图说明
图1系为本发明之一连接器元件中一接触的性质图。
图2系一示意图,显示一例示完全形成的单侧旋梁接触200的平面图。
图2b系一示意图,描绘图2之接触沿线A-A’之剖面。
图3系一示意图,例示在制程中间阶段之图2之单侧旋梁接触。
图3b系一示意图,例示图3之接触的立体图。
图4系一例示的单侧旋梁接触之电阻和负载对位移图。
图5系应用于一例示延伸的旋梁接触的负载-位移图。
图6系一示意图,为一例示双侧凸缘接触的平面图。
图6b为具有根据图6之接触结构及1.27mm阵列节距的接触,dB损耗为频率之函数的图式。
图6c为具有根据图6之接触结构的双侧凸缘接触,负载和电阻对位移的图。
图7描绘负载和电阻对位移图,其为安排于0.5mm节距之阵列,且具有图2接触结构形状之接触。
图8为负载-位移资料图,其为安排于127mm节距阵列之“半硬”接触,且具有图2和2b揭露之结构。
图9是一示意图,显示设计用以接触焊料球之一例示三凸缘接触。
图9b系负载-位移图,例示9之接触的三个负载-卸载循环。
图10例示根据本发明之一配置,形成阵列接触之制程涉及的范例步骤。
图11a至11h例示根据本发明之另一配置,形成阵列接触之另一制程涉及的范例步骤。
[具体实施方式]
本发明特征之一为一连接器元件之一或更多接触的工作范围(working range),连接器元件系安排在连接器元件阵列中,其中阵列间隔(亦称做节距,意指分隔最接近的相邻连接器中心的距离)在约0.05mm至约5mm之范围中,且较佳在约0.05mm至2mm之范围中。术语“连接器元件”文中系指可在导电元件间形成导电路经的任何实体(entity)。每一连接器元件包含一接触,其可更包含复数个接触部,其中至少一个接触部在一位移范围(a range of displacement)实质上为可弹性地变形。如文中使用,术语“工作范围”表示一性质或性质群组符合预定准则之范围。工作范围是可变形接触部可机械地移开之距离(位移)范围,而符合预定性能准则,包括单不限于,物理特性(如弹性和空间记忆(spatial memory)),以及电性质,如电阻、阻抗、电感、电容及/或弹性行为。
于一配置中,接触位于一连接器元件共面阵列之一连接器元件中,此连接器共面阵列包含一平面连接器。较佳地,每一接触除了一弹性可变形部外,尚具一基部系包含导电材料,此弹性可变形部包含导电材料系延伸自基部,并突出于含有连接器阵列之平面的表面上方。
籍着使用镀膜(film coating)、微影图案化、蚀刻和成形技术,制造可变形弹性部和基部一体成形的一接触。本发明之许多配置可形成阵列中的小接触,具有约0.05mm至约5mm范围的节距,且如文中所示,为约0.5mm至约1.27mm范围的节距,而提供传统科技无法达到的工作范围。本发明之一配置中,接触的横向尺寸在约0.5mm至约100mm范围内于另一配置中,如文中所示,可变形接触部显示一适合的工作范围,约0.0mm至约1.0mm范围内。于另一配置中,一单侧接触之可变形接触部正规化(normalized)工作范围约为0.20至约0.44范围,而双侧接触则约为0.40至约0.88范围。双侧接触系在一基板相对表面上具有接触。双侧连接器可使用文中所述技术制造,且可形成于一电路中。如文中使用,术语“正规化工作范围”为一无因次(dimensionless)量,代表一接触之工作范围除以接触所在之连接器阵列的阵列节距。
图1系本发明之一连接器元件中一接触的性质图。此图绘出一电连接器元件之电阻和所加外力相对接触位移的图。对给定的应用而言,连接器元件可能需要满足一特定阻值,其一般由可容忍电阻之上限界定。此外,对大部分弹性连接器件元件之应用而言,一施加位移应不超过一值,超过此值弹性接触部则不表现弹性方式。因此,图1之范围中,一工作范围可界定为施加位移范围的绝对值,此范围是连接器元件具有低于可容忍电阻的阻值范围,且是弹性部对施加位移或力维持弹性反映的范围。
图1中,可容忍电阻限制由Rmax代表。如所绘示,测量的电阻随接触位移增加而减少,且在Dmin时,电阻达到Rmax之值。因此工作范围的下限可设定在位移值Dmin,超过时连接器电阻就减少于Rmax。
力曲线Force1在接触位移高达标为Dplastic之值的范围内,显示可再现的(reproducible)行为。于此线性范围中,位移或力可以施加于一接触,当外部位移移走时,此接触具有可变形接触部之完全弹性回复。如例示,在位移超过Dplastic时,增加接触位移伴随少量增加或没有增加施加力,此表示塑性变形(plastic deformation)之开始。因此,解除经历超过Dplastic之变形会显现永久的变形,当负载移除也无法恢复,因此降低接触部的弹性范围。
因此,所示范例中,工作范围上限WR1设在低于Dplastic点的位移值,已确保外部位移不会导致弹性接触部之不可恢复位移。举例而言,此限制可设在Dplastic值之容限(margin)下的位移值,以确保可靠的接触性能。选替地,如图1例示,可利用施加于接触的最大夹力(clamping force)设定工作范围之上限Dmax1。举例而言,对包含电连接基板栅格阵列和印刷电路板的弹性接触之连接器阵列而言,可指明以最大总夹力。总最大夹力接着对应连接器阵列每一弹性接触可用的一最大夹力Fmax。
在连接器阵列使用之传统模锻弹簧技术中(曲线Force2),对于约2mm的节距而言,弹簧硬性(stiffness)非常地大。因此,引致小的位移需要大的施加力,结果所需施加力在较低的位移值达到Fmax。因此,对传统模锻弹簧而言,在低位移值达到工作范围之上限Dmax2。假设传统模锻弹簧有类似的Dmin,如图所示,相对于WR1,工作范围WR2大幅减少。
图2显示根据本发明之一配置,一示例完全形成的单侧旋梁接触200(rolling beam contact)的平面图。于此配置中,图2之旋梁接触200形成为一连接器元件共面阵列之一连接器元件(未绘示)之一部分。图2例示之平面图系从垂直(normal)含共面接触元件之平面的观点。接触200包含一基部202,其包含一金属材料且位于一平面中,且沿互相正交(orthogonal)的‘X’和‘Y’轴之尺寸分别为约0.4mm和0.5mm。弹性可变形部(文后一般亦称为“弹性部”或”弹簧部”)204一体成形地和基部202连续,且包含相同金属材料。此配置中,弹性部204包含单侧金属悬梁,其每一沿此梁之最长方向之实际尺寸为约1.5mm。
图2b描绘图2沿线A-A’之一剖面,如图2b中例示,悬梁204形成一向上曲形,并延伸与包含基部202之平面上方,相对于垂直包含基部202之平面的一线,悬梁204之一末端(distal end)206位在平面上大约0.6mm的高度H。从图2之观点,在线A-A’之方向,独立悬梁204之突出梁长度Lp约为1.16mm。
图3例示部分形成的单侧旋梁接触300之一平面图,在制程中间阶段对应于完全形成的接触200(图2)。如图3b中例示,基部302和梁部304为共面。图3显示突出梁长度Lp为1.5mm,等于沿其长轴之实际梁长度。再次参考图2,本发明之一配置中,梁204之形状、高度H、以及Lp系由一“成形”制程决定,其中图3所示,原平面的横梁304系变形为嵌于一平面表面中三维本体。此变形制程赋予图2和2b中例示的形状。因此,具有0.63mm高度的1.5mm悬梁可形成为外部(基)尺寸为约2.1×2.1mm之接触。因为接触200系用习知有效界定次微米尺寸特征的微影和蚀刻技术形成,包含接触200之阵列中的节距,可轻易设定在仅标称地(nominally)大于接触大小的尺寸。此系因用以形成接触200的微影和蚀刻技术之次微米公差(tolerances)小于实际接触大小甚多。
例示实验结果
以下小标题提出使用本发明之接触执行的量测结果。实验资料系由设计以侦测负载(以克为单位)、位移(以密耳(mils)为单位)、和电阻(以欧姆为单位)的简单负载-位移-电阻装置所量测与收集。
在以下范例中,工作范围之上限,系对应于对应塑性变形开始的位移、接触之位移限制、或负载值大于50克。
此外,对量测接触之电阻之范例而言,工作范围之下限界定在一位移值,高于此位移值时,每一量测循环中,电阻对位移描绘出一实质上不变的曲线;且高于此位移值时,电阻变化比低位移值时较不迅速。因此,以下范例中,工作范围之下限由电性量测典型之L形电阻对位移资料中的一“膝点(knee)”界定(见图1中点K),而非由一绝对电阻值界定。
最后,除图9b外,所有以下图式例示之资料系得自于厚度约2密耳之接触。
大工作范围之单侧悬梁接触
图4系根据本发明之一范例配置形成的单侧悬梁接触之电阻和负载,对位移图。测量出图4的旋梁接触具有图2和2b揭露之接触200的结构,且形成为节距1.27mm之连接器元件阵列的一部分。
图4之资料代表从一接触取的100次循环。每一量测中,量测装置于梁部204之表面约0密耳,而在垂直基部202平面方向上,达到约20密耳的位移。对每一量测而言,当透过连接器元件建立电接触时,电阻迅速下降。对大于约5密耳的位移而言,电阻降到约0.04mΩ以下,并维持于此值以下。
如图4中所示,在最大位移20密耳时,负载从零值增加至约41克。从负载-位移资料中明白的是,在标为A之初始量测后,所有量测描绘一类似曲线。遍及100次量测循环中,负载-位移资料的可再现性表示悬梁接触在20密耳范围中,仅仅显示弹性行为。
图4之范例中,可界定旋梁接触的可接受阻值及包含可接受机械性能之工作范围。利用0.04Ω之Rmax值,工作范围之下限可标为F,在大约6密耳位移处,在此处所有量测的R值实质上在Rmax之下。因为负载-位移资料在高达20密耳量测的位移处,并未指出塑性流动(plastic flow)的开始,若利用塑性流动的开始作为界定的准则,工作范围之上限系对应20密耳之位移限制。选替地,若利用50克之最大可容许施加负载作为准则,在20密耳位移尚未达到最大值。无论哪种情形,假设实验资料描绘高达接触位移限制的接触行为,工作范围之上限系对应约20密耳位移。因此,图4之接触存在着约14密耳之工作范围(6+密耳和20密耳位移间的范围),图4之接触形成在1.27mm(50密耳)节距之阵列上。此所欲工作范围特性持续至少100次量测循环,如图4所示。
量测得到图4资料的接触所得的工作范围可以选替地以正规化工作范围表示。再一次重申,正规化工作范围意指为,得自给定的接触之位移值除以此接触所在之阵列的节距。此范例中,对单侧旋梁而言,正规化工作范围系大约(14密耳)/(50密耳)或0.28。
高耐久性延伸旋梁接触
图5系应用于图2b例示之本发明的一范例延伸旋梁接触的负载-位移图。于此延伸旋梁接触中,一弹性部形为一旋梁,具形状实质上类似图2和2b,且沿最长方向L有一实际尺寸为1.5mm,如图3所示。藉由交插(interleaving)两组梁元件,此旋梁接触长度做得比节距大。图5量测之范例接触系为一极高的机械耐久性设计。延伸旋梁接触安排于1.27mm节距之连接器阵列。
显示于图5之资料系取自约40,000次量测循环,包含负载和卸载(增加位移和减少位移)。明显地,所有资料系于非常狭窄之变化内,本质上描绘出相同的曲线。如图4中,在量测使用之位移范围中,显示一近乎理想的弹性行为。
禁得起数万次测试循环并维持一可再现弹性行为之能力,使此接触适于如测试插座(sockets)之应用,其中一连接器可连接和分离类似次数。再一次重申,传统连接器在如此小节距设计上,并没有此类的机械耐久性。更确切地说,对类似尺寸之模锻弹簧连接器而言,在约30-40次循环后,可观察到负载-位移曲线之变化,表示弹簧机械行为之劣化。
高频低损耗之接触
图6提供根据本发明之一配置,显示一范例双侧凸缘(flanged)接触结构的平面图。图6b为具有与图6接触类似结构之1.27mm节距接触,描绘dB损耗为频率之函数的图。图6c系具有根据图6之接触结构的接触之负载和电阻相对于位移的关系图。
如图6中所示,接触600包含二个曲弹性部602,延伸自基板604之一平面。接触600形成于节距1.12mm之阵列中。弹性部602具短的电路径长度,界定为通过包含此接触之连接器时,电流行经弹性部602之长度。所示范例中,电路径长度为约1.14mm。
因为短电路径长度,接触600在高频提供非常低的dB损耗,以符合高频应用的要求。如图6b例示,在10GHz,dB损耗保持在0.8之值下,表示即使接触操作在非常高频率,仍有非常低的损耗。
图6c资料中,为高达约9密耳位移之最大值的电阻和负载相对于位移的测量。在一初始插入(insertion)曲线(A)后,后续负载(B)和卸载(C)曲线靠近地聚集在一起,有一磁滞(hysterrsis)出现负载和卸载循环间。使用一Rmax值为0.08mΩ,一工作范围之下限可表示为D,在约2.5mm位移处,此值之上所有测得R值系于Rmax之下。大约8密耳之值对应工作范围位移之上值,此位移之上施加力超过50克。
因此,对图6形成在1.12mm阵列节距之接触600而言,存在一工作范围约5.5密耳。因此本发明可提供一种接触元件,高达10GHz仍具低dB损耗,以及对于1.12mm节距可有5.5密耳之工作范围。对应低电阻值和稳定弹性行为,传统接触无法达到这样的工作范围,而保持10GHz时这样低的dB损耗。在此范例中,正规化工作范围为大约0.13。
精细节距(fine-pitch)旋梁接触
图7描绘负载和电阻对位移图,其属于一接触具有和接触结构200之基部202与弹性部204(图2)大体相同结构,但具较小的尺寸且安排于0.5mm节距之阵列。描绘二个循环的负载和卸载。即使在0.5mm节距(约等于19.7密耳),对应于施加位移给约5密耳和大约13.7密耳之间的接触,此配置获得约8.7密耳的工作范围,其中观察到可接受的电阻和可再现弹性行为。选替地,可计算图7之接触的正规化工作范围,对一单侧接触而言,约等于(8.7密耳)/(19.7密耳)或约0.44,而对一双侧接触而言约为0.88。
单侧旋梁接触之硬化
图8例示一单侧旋梁接触安排于1.27mm节距阵列,且具图2和2b揭露之结构的负载-位移资料。此范例中,此接触包含“半硬(half-hard)”金属铜合金,其于量测前未经热处理。图8中,执行超过18,000次负载和卸载的循环。在给定的移位所需的负载中,观察到一平滑、渐变、和对称位移(shift)。此行为系因旋梁接触中金属材料之工作硬化,其肇因自负载与卸载,接着导致梁元件较硬(stiffer)的弹性性质。图8中显示的此行为知识,容许根据包含此接触之连接器的应用修改接触。举例而言,若一应用不需含此接触之连接器的多次机械负载和卸载,可藉抑制接触之热处理达到更顺应的接触。
焊料球接触之超薄三接触凸缘
图9为根据本发明另一配置,例示三凸缘(弹性接触部)接触900,设计以接触焊料球901。凸缘902安排为沿一圆形开口之弧以约120度分隔。在所示范例中,接触900安排于具1.27mm节距之接触阵列。接触900包含薄金属,具有约1密耳之厚度。因此,基部904和凸缘902之厚度约1密耳。
图9b系负载-位移图,例示具接触900结构和尺寸之一接触的三个负载-卸载循环。图9b之负载-位移曲线的斜率表示图9之三凸缘接触的一顺应的弹簧“常数”。藉着减少制造具接触900结构的接触之金属层(或“箔”)之厚度,可增加接触之弹性部的顺应性(compliance),因此对给顶的接触大小,可负担更大位移(即工作范围)。
工作范围之讨论
以上范例中,工作范围特征系以位移或外力为工作范围的变化参数之情形描述。例示接触之工作范围值系基于位移范围显示,其中电接触之电阻在可接受范围。已显示对具0.5至1.27mm节距之阵列中的接触而言,可达约6-14密耳或更大的大工作范围。在图6b之范例中,例示双凸缘接触在高频的低dB损耗。因此,于本发明之配置中,工作范围可包含一接触位移范围,藉其同时满足数个不同性质(例如,于图6-6c中:弹性反应、低电阻、可容忍范围中之施加力、以及高频之低损耗)。
图10例示形成一接触阵列之制程中,本发明之范例步骤。步骤1002中,制造一导电层(或片)。视片厚度而定,导电层可形成为独立或形成于基板上。一范例中,选择一导电金属,其可提供所欲弹性给一弹性接触部。导电金属可包含钛作为一支撑结构,其于额外步骤中可被电镀,以得到所欲电及/或弹性行为。选替地,导电金属包含铜合金或多层金属片,如不锈钢镀以铜-镍-金之多层金属片。更具体地,导电金属可包含第一层含有小粒铜铍(CuBe)镀上无电(electroless)镍-金(Ni/Au),以提供不氧化表面。适当选择材料可提高导电层形成之接触的工作范围。
于选用的步骤1004中,执行导电金属片之热处理。举例而言,某些金属材料之热处理将材料自半硬态转化为硬态。
步骤1006中,接着应用微影敏感光阻膜于导电金属片。干膜可用在范围1至20密耳之较大特征尺寸,而液态光阻可用在小于1密耳的特征尺寸。
步骤1008中,根据接触之预定设计图案化微影敏感光阻膜。具体而言,紫外光透过包含预定设计之遮罩,用以曝光此光阻膜,其后显影光阻以界定接触特征在光阻中。欲蚀刻的部分未受遮罩保护。使用微影制程界定接触特征,使得接触之打印(printing)具有精细的解析度,类似于半导体制程。一范例中,遮罩含有特征阵列,每一特征根据所欲节距间隔。较佳地,节距为1.5mm或更小。
步骤1010中,于特别为此导电材料选择的溶液中蚀刻此片。可为此片选择之每一个别材料一般具有特定的蚀刻化学以提供最佳蚀刻特性,如蚀刻速率(即此溶液实施此蚀刻多好与多快)。蚀刻剂之选择亦影响其他特性,如经蚀刻的接触特征之侧壁外形(profile),亦即,从剖面看一特征的蚀刻轮廓(contour)的形状。蚀刻剂的范例包含氯化铜(cupricchloride)、氯化铁(ferric chloride)、及氢氧化硫(sulfurichydroxide)。蚀刻后,在剥除制程中移除光阻层之剩余部分,留下片中的蚀刻特征。蚀刻特征可包含特征弹性部,如图3b的梁部304。
步骤1012中,含接触特征之图案化导电金属片经历一成形制程,例如使用一批次(batch)成形工具。批次成形工具可依待成形接触阵列之所欲节距加以设计。一范例中,批次成形工具包含复数个滚珠轴承(ballbearings)安排成阵列形式,较佳地放置于一支撑表面中的开口阵列。滚珠轴承可为不同尺寸,以施加不同力于接触特征,藉此给予同一片上的接触不同机械特征。滚珠轴承之曲率(curvature)用以将接触特征(或凸缘)推离导电片之平面。藉由应用成形工具于此片,接触之凸缘为三维,以产生所欲弹性接触部。
步骤1014中,成形接触片应用于一基板上,较佳为一平面绝缘材料,使得弹性接触部突出于平面基板之表面。
步骤1016中,应用单一化(singulation)制程,形成一阵列的独立(分离的)接触,使得这些接触彼此电隔离。
图11a-11h例示根据本发明另一配置形成一接触之范例制程步骤,举例而言,如图2至2b的接触200。参照图11a,提供一基板1100,且接触元件将位于其上。基板1100可为例如矽晶圆或陶瓷晶圆,且可包含一介电层形成在其上(图11a中未示)。例如为蓝宝石上矽(SOS)、玻璃上矽(SOG)、硼磷四乙基正矽酸盐(BPTEOS)、或四乙基正矽酸盐(TEOS)之介电层可形成于基板1100上,供隔离接触元件与基板1100。一支撑层1102形成在基板1100上。支撑层1102可为沉积的介电层,如氧化物或氮化物层、旋涂(spin-on)介电质、聚合物、或任何其他适合的可蚀刻材料。支撑层1102可由几个不同制程沉积,包含化学气相沉积、电浆气相沉积(plasma vapor deposition,PVD)、旋转涂布制程、或当基板1100未覆有介电层或导电粘着层时,支撑层1102可利用半导体制程常使用的氧化制程成长。
支撑层1102沉积后,一遮罩层1104形成于支撑层1102之顶表面上。遮罩层1104结合传统微影制程,使用遮罩层1104界定一图案于支撑层1102上。在遮罩层打印与显影后(图11b),包含区域1104a至1104c之遮罩图案形成在支撑层1102之表面上,界定支撑层1102受保护免于后续蚀刻之区域。
参照图11c,利用区域1104a至1104c作为遮罩,执行非等向蚀刻制程。非等向蚀刻制程的结果是,移除未被图案化遮罩层覆盖的支撑层1102。因此,形成支撑区域1102a至1102c。接着移除包含区域1104a至1104c的遮罩图案,以暴露支撑区域(图11d)。
支撑区域1102a至1102c接着经历等向蚀刻制程。等向蚀刻制程以实质相同的蚀刻速率,在垂直和水平方向移除受蚀刻材料。因此,等向蚀刻之结果是,削圆支撑区域1102a至1102c的顶角,如图11e所示。等向蚀刻制程可包含使用SF6、CHF6、CF4、或其他蚀刻介电材料常用的习知化学组成之电浆蚀刻制程。选替地,等向蚀刻制程为湿蚀刻制程,例如使用缓冲氧化物蚀刻(BOE)之湿蚀刻制程。
参照图11f,一金属层1106形成于基板1100之表面和支撑区域1102a至1102c之表面上。金属层1106可为铜层、铜合金层或多层金属沉积,如钨镀以铜-镍-金(Cu/Ni/Au)。较佳地,接触元件系利用以下形成:一小粒铜-铍合金接着镀上无电镍-金,以提供不氧化表面。金属层1106可以化学气相沉积制程、电镀、溅镀、电浆气相沉积,或使用其他传统金属膜沉积技术沉积。利用传统微影制程,沉积一遮罩层且图案化为遮罩区域1108a至1108c。遮罩区域1108a至1108c界定金属层1106受保护免于后续蚀刻之区域。
图11F中的结构接着经历蚀刻制程,以移除未被遮罩区域1108a至1108c覆盖的金属层之部分。结果,形成金属部1106a至1106c,如图11g所示。每一金属部1106a至1106c包含一基部形成在基板1100上,以及一曲弹性部形成在个别的支撑区域(1102a至1102c)上。因此,当从剖面看时,每一金属部之曲弹性部采取和底下支撑区域实质上相同的形状,突出于基板1100的表面上。
图11H的步骤中,移除支撑区域1102a至1102c,例如藉由使用湿蚀刻、非等向电浆蚀刻、或其他蚀刻制程。若支撑层使用氧化层形成,可使用缓冲氧化物蚀刻剂移除支撑区域。结果,形成独立(free standing)弹性接触部1110a至1110c于基板1100上。
本发明配置提出的前述揭露为例示和说明之目的。其不欲为穷举(exhaustive)或限制发明为所揭露确切形式。文中所述配置之许多变化和修改,鉴于上述揭露,对熟此技艺者是明显的。发明之范畴只由所附申请专利范围及其均等物界定。
举例而言,图4至9中的资料系取自阵列间隔范围约0.5-1.27mm的接触。然而,亦考虑其他小到包含阵列节距约0.05mm的接触阵列配置。因为本发明配置中使用的微影制程可用于至少小到65-90奈米的平面尺寸,也考虑本发明之配置具有类似横向(平面中)尺寸的接触元件。此外,用以形成基部和弹性接触部的金属膜之膜厚可减到至少约10奈米,而仍给予由之形成的接触低电阻。最后,三维本体(bodies)之规则阵列可制造为10微米那么小,以形成一模板(template),让类似整体尺寸的三维弹性接触部可由之制造。鉴于上述,对以次毫米、微米、次微米阵列节距制造的电接触而言,可实现大工作范围和大正规化工作范围。
本发明的另一配置中,具提升工作范围的一弹性接触包含一弹性接触部,此弹性接触部沿接触之一平面中之接触部的长方向,具有渐细(tapered)的形状。弹性部靠近基部的区域具有第一宽度,而一末端区域具有第二宽度,第二宽度实质上较第一宽度为窄。弹性接触部藉包含较窄的末端,可增加接触的顺应性。
本发明的另一配置中,一弹性接触包含一弹性接触部,弹性接触部沿接触部之长方向,具有渐细的厚度。弹性部靠近基部之区域具有第一宽度,而一末端区域具有第二宽度,第二宽度实质上较第一宽度为窄,以增加接触的顺应性。
本发明另一配置中,一弹性接触包含具一片(fillet)梁形状的弹性接触部。片梁形状包含一弹性梁之片区域,此区域位近一基部。
此外,虽然于以上讨论之范例接触中,一基部环绕一弹性部,本发明可有其他配置操作,其中以任何形式安排弹性部和基部,其提供一平面基部和一突出弹性部间电连续性。
再者,本发明叙述代表配置中,说明书可能呈现本发明之方法及/或制程为特定顺序之步骤。然而,该方法或制程不依赖文中提出特定顺序之步骤的程度,该方法和制程不应限于描述之特定顺序。如熟此技艺者理解其他步骤顺序是可能的。因此,说明书中提出步骤之特定顺序不应理解为对申请专利范围之限制。此外,针对本发明之方法及/或制程的申请专利范围不应限于依所写顺序之步骤的执行,且熟此技艺者可轻易理解顺序可变化,而仍在本发明之精神与范畴内。
【主要元件符号说明】
200接触 202基部 204弹性可变形部
206远端
300接触 302基部 304梁部
600接触 602弹性部 604平面
900接触 901焊料球 902凸缘
1100基板 1102支撑层
1102a、1102b、1102c支撑区域
1104遮罩层 1104a、1104b、1104c区域
1106金属层 1106a、1106b、1106c金属部
1108a、1108b、1108c遮罩区域
1110a、1110b、1110c独立弹性接触部
Claims (21)
1.一种于一接触阵列中之电接触,该阵列具一节距小于约1.5mm,该接触之设置系满足包含一工作范围之特定设计要求,该接触之制造步骤包含:微影图案化及蚀刻一导电层,电镀导电材料于该图案化导电层上,以及实施一成形制程于该图案化导电层上,以形成一弹性接触部。
2.一种于一电连接器中之接触,包含:
一基部实质上位于包含一接触阵列之一平面中,该阵列具一节距于约0.05mm至约5.0mm之范围中;以及
一弹性部与该基部为一整体,突出于该基部之该平面上,且供产生一工作范围约0.0至约1.0mm。
3.如权利要求2所述之接触,该工作范围之一上限对应于50克之一施加力。
4.如权利要求2所述之接触,该工作范围之特性之一下限由一电阻对位移曲线中的一膝点所决定。
5.如权利要求2所述之接触,该工作范围之一下限对应于一位移,于该位移以上,该接触之一量测电阻小于15mΩ。
6.如权利要求2所述之接触,该工作范围包含一范围,其中在频率高达约10GHz时,一接触dB损耗约小于1。
7.如权利要求2所述之接触,该接触具有一接触电路径长度小于约0.7倍之该阵列节距。
8.如权利要求2所述之接触,该接触之制造步骤包含:
提供一基板,供形成该接触于其上;
形成一导电层于该基板上,该导电层提供一第一表面;
蚀刻该导电层,以界定该基部和该弹性部;以及
变形该弹性部之至少一部分,该弹性部配置为从该第一表面突出,以于该基部和该弹性部间提供一可变形的导电路径。
9.一种一连接器阵列之旋梁接触,包含:
一基部实质上位于包含一接触阵列之一平面中,该阵列具一节距于约0.05mm至约1.27mm之范围中;以及
一弹性部包含一或更多旋梁,与该基部为一整体,且以一向上曲形突出于该基部之该平面上,该旋梁接触提供一工作范围约0.0mm至约1.0mm。
10.如权利要求9所述之旋梁接触,该旋梁接触于20之位移范围中,承受超过100次负载-卸载循环而不改变弹性行为。
11.如权利要求9所述之旋梁接触,该旋梁接触之制造步骤包含:
提供一基板,供形成该旋梁接触于其上;
形成一导电层于该基板上,该导电层提供一第一表面;
蚀刻该导电层,以界定该基部和该弹性部;以及
变形该弹性部之至少一部分,该弹性部配置为从该第一表面突出,以于该基部和该弹性部间提供一可变形的导电路径。
12.一种一连接器阵列之多凸缘焊料球接触,包含:
一基部实质上位于包含一接触阵列之一平面中,该阵列具一节距于约0.05mm至约1.27mm之范围中;以及
一弹性部包含复数个凸缘,与该基部为一整体,且从该基部之一实质上圆形内缘突出于该基部之该平面上,并供接合一焊料球,该接触提供一位移约为0.0mm至约1.0mm。
13.如权利要求12所述之多凸缘焊料球接触,该复数个凸缘包含三个凸缘。
14.如权利要求13所述之多凸缘焊料球接触,该节距约为1.27mm,而该接触为约5密耳之一位移的弹性可变形。
15.如权利要求12所述之多凸缘焊料球接触,多凸缘焊料球接触籍以下制造:
提供一基板,供形成该凸缘焊料球接触于其上;
形成一导电层于该基板上,该导电层提供一第一表面;
蚀刻该导电层,以界定该基部和该弹性部;以及
变形该弹性部之至少一部分,该弹性部配置为从该第一表面突出,以于该基部和该弹性部间提供一可变形的导电路径。
16.一种于一电连接器中的接触,包含:
一基部实质上位于包含一接触阵列之一平面中,该阵列具一节距于约0.05mm至约1.27mm之范围中;以及
一弹性部与该基部为一整体,突出于该基部之该平面上,并供产生一正规化工作范围约为0.1至约0.44。
17.如权利要求16所述之接触,一位移之一上限用以界定该正规化工作范围对应于50克之一施加力。
18.如权利要求16所述之接触,一位移之一下限用以界定该正规化工作范围,由一电阻对位移曲线中的一膝点所决定。
19.如权利要求16所述之接触,一位移之一下限用以界定该正规化工作范围,对应于一位移,该位移以上该接触之一量测电阻小于大约15mΩ。
20.一种在一基板之相对侧具有接触之一电连接器中的双侧接触,每一接触包含:
一基部实质上位于包含一接触阵列之一平面中,该阵列具一节距于约0.05mm至约1.27mm之范围中;以及
一弹性部与该基部为一整体,突出于该基部之该平面上,该双侧接触提供产生一正规化工作范围约为0.2至约0.88。
21.一种于一接触阵列中制造电接触的方法,包含:
设计一接触之一尺寸和形状,该接触包含根据特定设计要求之一弹性部,该设计要求包含一阵列节距小于约1.5mm以及一所欲工作范围;
使用根据该接触经设计的形状与尺寸之一微影图案,界定该接触;
使用该微影图案,蚀刻一导电层,以产生一接触结构;
成形该接触结构,以产生一弹性部具设计以达到该所欲工作范围的一预定位移;
电镀该接触结构,以给予满足该特定设计要求之性质;以及
单一化该接触结构,以形成一接触位于一基板上,并与该接触阵列中其他接触电隔离。
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2003
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2004
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- 2004-12-07 CN CNB2004800364746A patent/CN100511853C/zh active Active
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Cited By (1)
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CN103918359A (zh) * | 2011-11-07 | 2014-07-09 | 罗伯特·博世有限公司 | 用于接触与方向相关的电气和/或电子构件的装置和对应的构件组件 |
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CN100474572C (zh) | 2009-04-01 |
US7244125B2 (en) | 2007-07-17 |
US7989945B2 (en) | 2011-08-02 |
US20050124181A1 (en) | 2005-06-09 |
CN100511853C (zh) | 2009-07-08 |
CN1890806A (zh) | 2007-01-03 |
US20070275572A1 (en) | 2007-11-29 |
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