CN1915572B

CN1915572B - Laser irradiation method and laser irradiation device and method of manufacturing semiconductor device

Info

Publication number: CN1915572B
Application number: CN 200610126206
Authority: CN
Inventors: 田中幸一郎; 宫入秀和; 志贺爱子; 下村明久; 矶部敦生
Original assignee: Semiconductor Energy Laboratory Co Ltd
Current assignee: Semiconductor Energy Laboratory Co Ltd
Priority date: 2001-09-25
Filing date: 2002-09-25
Publication date: 2012-11-14
Anticipated expiration: 2022-09-25
Also published as: CN1915572A; CN100446181C; CN1828834A

Abstract

The present invention is characterized in that by laser beam being slantly incident to the convex lens, an aberration such as astigmatism or the like is occurred, and the shape of the laser beam is made linear on the irradiation surface or in its neighborhood. Since the present invention has a very simple configuration, the optical adjustment is easier, and the device becomes compact in size. Furthermore, since the beam is slantly incident with respect to the irradiated body, the return beam can be prevented.

Description

Laser irradiating method and laser irradiation device and the method for making semiconductor devices

The application is for dividing an application, and the application number of its female case application is: 02143428.X, and its applying date is on September 25th, 2002, its denomination of invention is " laser irradiating method and laser irradiation device and a method of making semiconductor devices ".

Technical field

The present invention relates to a kind of laser irradiation and a kind of laser irradiation device (this device comprises laser instrument and the photosystem that is used for laser instrument emitted laser bundle is directed to irradiated object) that is used to use this method.In addition, the present invention relates to a kind of manufacturing approach that comprises the semiconductor devices of laser beam irradiating step.Notice that semiconductor devices described herein comprises a photoelectric device such as liquid crystal display device or luminescent device and an electronic device that comprises photoelectric device as parts.

Background technology

Recent years, a kind of technology is by broad research, and wherein carry out laser annealing and handle being formed at semiconductive thin film on the insulating substrate such as glass, so that the film crystallization, thereby improve its crystallinity, to obtain crystalline semiconductor film or activator impurity element.Notice that crystalline semiconductor film in this specification representes wherein to exist the semiconductive thin film of crystal region, also comprise the semiconductive thin film of whole crystallization.

Form pulse laser beam through optical system by excimer laser etc.; So that form one several centimetres square spot or the linear shape more than the length 100mm on illuminated object surface, and scanning laser beam (or corresponding to by irradiation position of the laser beam that relatively moves according to the surface) is advantageous and also be fabulous technically in large-scale production with the method for carrying out annealing in process." linear shape " described herein is not to refer to proper one " line ", but the rectangle (or ellipse of a prolate) that length-width ratio is bigger.For example, its expression length-width ratio is 2 or greater than 2 shape (preferred 10-10000).Notice that adopting linear shape is in order to obtain illuminated object to be carried out the desired energy density of abundant annealing in process.

Fig. 7 is a kind of embodiment of structure of the optical system that is used for forming on illuminated object surface linear laser beam.This kind structure is quite common.All optical systems described above are all based on structure shown in Figure 7.According to this structure, the cross sectional shape of laser beam is converted into wire, and laser beam is being become evenly according to the energy density distribution of shining on the surface simultaneously.In a word, be used to make the optical system of laser beam energy density homogenising to be called as the bundle homogenizer.

Be divided into direction by laser instrument 71 emitted laser bundles by a lens pillar group 73, determine the length of linear laser beam thus in vertical direction perpendicular to its direction of propagation.This direction is called as first direction in this manual.Suppose that first direction is along with being changed by the crooked radiation direction of mirror when in optical system, inserting mirror.In this structure, column lens array is divided into seven parts.Then through lens pillar 74 on illuminated object surface synthesized laser beam, make linear laser beam in energy density distribution homogenising longitudinally thus.

Then, with describing the structure shown in Fig. 7 side view.By the direction that lens arra 72a and 72a are divided into vertical its direction of propagation and first direction, determine the length of linear laser beam by laser instrument 71 emitted laser bundles thus at width.This direction is called as second direction in this specification.Suppose in optical system, to insert mirror, second direction along with by mirror crooked light direction and change.In this structure, column lens array 72a and 72a are divided into four parts respectively.Separated laser beam is synthetic by lens pillar 74 temporarily.After this, laser beam is focused on by dual lens pillar 78 then, thereby forms single laser beam once more in shone thing surface 79 by mirror 77 reflections.Dual lens pillar 78 is made up of two lens pillars.Laser beam is determined in the length of width at the homogeneous energy Density Distribution and the linear laser beam of width like this.

For example, what be used as laser instrument 71 is a kind of excimer laser, and wherein laser window is of a size of 10mm * 30mm (being respectively the half the of laser beam section width), and laser beam is produced by the optical system with structure shown in Fig. 7 A and the 7B.Thus, can obtain having the homogeneous energy Density Distribution on illuminated object 79 surfaces and the linear laser beam that is of a size of 125mm * 0.4mm.

At this moment, for example when during as the base material of all optical systems, obtaining high transmission rates with quartz.Note preferably optical system being applied, under the frequency of used excimer laser, can obtain 99% or above transfer rate like this.

Then, use the linear laser beam overlapping irradiation when laterally moving gradually that forms by said structure.Like this, when the whole surface of amorphous semiconductor film being carried out the laser annealing processing, the amorphous semiconductor film can be by crystallization, and its crystallinity can be enhanced and obtain the crystal semiconductor film, and impurity element is activated.

Summary of the invention

Yet as shown in Figure 7, the optical system that is used to form linear laser beam is very complicated.The problem that such optical system exists is to be difficult to carry out optical adjustment, because footprint (footprint) becomes big, device is increased in addition.

Under the situation of the laser beam that its reflectivity of the relative irradiated object of this external use is higher, when aforementioned laser beam impinges perpendicularly on illuminated object, produce so-called Returning beam, its identical light path when inciding illuminated object with light beam is returned.Returning beam becomes the factor that destruction of laser instrument output and change of frequency and laser pole etc. is had adverse effect.

Therefore; An object of the present invention is to provide a kind of laser irradiation device; Wherein form linear laser beam through using than the simpler optical system of conventional optical systems; And use such linear laser beam can more effectively carry out annealing in process, and a kind of laser irradiating method that uses this laser irradiation device.In addition, another object of the present invention provides a kind of manufacturing approach of semiconductor devices, comprises the aforementioned laser illuminating method in its operating procedure.

The invention is characterized in by laser beam to produce, and produce linear laser beam at irradiating surface or in its peripheral region such as aberrations such as astigmatisms with respect to the convex lens oblique incidence.

Relating in this manual, the structure of the present invention of disclosed a kind of laser irradiation device is characterised in that; It has a laser instrument and convex lens, and these convex lens are obliquely installed and make the shape of the aforementioned laser bundle on the irradiating surface or in its peripheral region to become wire with respect to the direction of propagation of aforementioned laser device emitted laser bundle.

In addition; As for other structure of the present invention that relates to laser irradiation device; It is a laser irradiation device with laser instrument and convex lens; The direction of propagation of the relative aforementioned laser device of these convex lens emitted laser bundle is obliquely installed and makes the shape of the aforementioned laser bundle on the irradiating surface or in its peripheral region to become the wire shape; Its characteristic is following: the width of supposition measured laser beam when the laser instrument emitted laser incides formed illuminated object on the substrate through aforementioned convex lens is w, and the thickness of aforementioned substrate is d, the aforementioned laser bundle with respect to aforementioned irradiated object to satisfy the incidence angle θ incident of following formula:

θ≥arctan(w/(2×d))

In above-mentioned each structure, the aforementioned laser device is characterised in that it is solid-state laser, gas laser or the metal laser device of continuous oscillation or impulse hunting.Should be noted that as aforementioned solid-state laser, listed YAG laser instrument, the YVO of continuous oscillation or impulse hunting ₄Laser instrument, YLF Lasers device, YAlO ₃Laser instrument, amorphous laser, ruby laser, alaxadrite laser, Ti: sapphire laser etc.; As aforementioned gas laser, listed excimer laser, Ar laser instrument, Kr laser instrument, the CO of continuous oscillation or impulse hunting ₂Laser instrument etc., and, list He-Cd laser device, copper-vapor laser, golden vapor laser etc. as the aforementioned metal laser instrument.

In addition, in above-mentioned each structure, desirable is that the aforementioned laser bundle is changed into higher hamonic wave by a kind of nonlinear optical element.For example, known a kind of YAG laser instrument emission wavelength laser beam that is 1065nm is as first-harmonic.This laser beam is very low with respect to the absorption coefficient of silicon fiml, if therefore keep its wavelength constant, is difficult to make the amorphous silicon film crystallization of one of semiconductor film from technical standpoint.Yet, adopt nonlinear optical element can make this laser beam change shorter wavelength into, and, listed second higher hamonic wave (532nm), the 3rd higher hamonic wave (355nm), the 4th higher hamonic wave (266nm) and the 5th higher hamonic wave (213nm) as higher hamonic wave.Because these higher hamonic waves have high absorption coefficient with respect to amorphous silicon film, they can be used to the crystallization of amorphous silicon film.

In addition, in above-mentioned each structure, aforementioned convex lens are characterised in that it is a non-spherical lens.In addition, as convex lens, meniscus shaped lens, biconvex lens, planoconvex spotlight etc. have been listed; And as convex lens of the present invention, can be in these lens any one, and the incidence surface of laser beam can be in convex lens two surfaces any one.

In addition, in said structure,, can adopt glass substrate, quartz substrate, silicon chip, plastic substrate, metal substrate, stainless covering substrate, flexible substrate etc. for aforementioned substrate.As aforementioned glass substrate, can be the substrate that constitutes by barium borosilicate glass, aluminium borosilicate glass etc.In addition, flexible substrate refers to the membranaceous substrate that is made up of PET, PES, PEN, acrylic resin etc., if semiconductor chip adopts the flexible substrate preparation, is expected to alleviate its weight.If on the surface of flexible substrate or on its surface and the back side, form the barrier layer of single or multiple lift by formations such as aluminium film (AlON, AlN, AlO etc.), carbon film (DLC (diamond-like-carbon) etc.), SiN, desirable is that durability etc. is enhanced.

In addition; The characteristics that relate to the structure of the present invention of disclosed laser irradiating method in this specification are; Through with respect to the tilted-putted convex lens in the laser beam direction of propagation; Shone on the surface or in its peripheral region, forming linear beam, aforementioned linear beam relatively moves with respect to illuminated object and shines.In addition, the characteristics that relate to other structure of the present invention of laser irradiation are, through with respect to the tilted-putted convex lens in the laser beam direction of propagation, are being shone on the surface or in its peripheral region, are forming linear beam.The width of supposing light beam measured when aforementioned linear beam incides formed illuminated object on the substrate is w, and the thickness of aforementioned substrate is d, and aforementioned linear beam incides illuminated object with the incidence angle θ that satisfies following formula:

θ≥arctan(w/(2×d))

And aforementioned linear beam shone when aforementioned linear beam relatively moved with respect to aforementioned illuminated object.In above-mentioned each structure, the characteristics of aforementioned laser device are that it is the metal laser device of solid-state laser, gas laser or continuous oscillation or impulse hunting.Should be noted that as aforementioned solid-state laser, listed YAG laser instrument, YVO ₄Laser instrument, YLF Lasers device, YAlO ₃The Ti of laser instrument, amorphous laser, ruby laser, alaxadrite laser, continuous oscillation or impulse hunting: sapphire laser etc.; As aforementioned gas laser, listed the CO of excimer laser, Ar laser instrument, Kr laser instrument, continuous oscillation or impulse hunting ₂Laser instrument etc., and, list He-Cd laser device, copper-vapor laser and golden vapor laser etc. as the aforementioned metal laser instrument.In addition, in above-mentioned each structure, desirable is that the aforementioned laser bundle is changed into higher hamonic wave by a kind of nonlinear optical element.In addition, in above-mentioned each structure, the characteristics of aforementioned convex lens are that it is a non-spherical lens.In addition, as convex lens, meniscus shaped lens, biconvex lens, planoconvex spotlight etc. are arranged; And as convex lens of the present invention, can be in these lens any one, and the incidence surface of laser beam can be in convex lens two surfaces any one.

In addition, in said structure,, can adopt glass substrate, quartz substrate, silicon chip, plastic substrate, metal substrate, stainless covering substrate, flexible substrate etc. for aforementioned substrate.

In addition; The characteristics that relate to the structure of the present invention of the method for disclosed manufacturing semiconductor devices in this specification are; Through with respect to the tilted-putted convex lens in the laser beam direction of propagation; Shone on the surface or in its peripheral region, forming linear beam, aforementioned linear beam shone when aforementioned linear beam relatively moved with respect to semiconductor film.

In addition, the characteristics that relate to other structure of the present invention of the method for making semiconductor devices are, through with respect to the tilted-putted convex lens in the laser beam direction of propagation, are being shone on the surface or in its peripheral region, are forming linear beam.The width of supposing linear beam measured when aforementioned linear beam incides formed semiconductor film on the substrate is w, and the thickness of aforementioned substrate is d, aforementioned linear beam with respect to semiconductor film to satisfy the incidence angle θ incident of following formula:

θ≥arctan(w/(2×d))

And aforementioned linear beam shines simultaneously, and aforementioned linear beam moves with respect to the aforesaid semiconductor film.In above-mentioned each structure, the characteristics of aforementioned laser bundle are that it is the metal laser device of solid-state laser, gas laser or continuous oscillation or impulse hunting.Should note having listed YAG laser instrument, YVO as aforementioned solid-state laser ₄Laser instrument, YLF Lasers device, YAlO ₃The Ti of laser instrument, amorphous laser, ruby laser, alaxadrite laser, continuous oscillation or impulse hunting: sapphire laser etc.; As aforementioned gas laser, listed the CO of excimer laser, Ar laser instrument, Kr laser instrument, continuous oscillation or impulse hunting ₂Laser instrument etc., and, list He-Cd laser device, copper-vapor laser and golden vapor laser etc. as the aforementioned metal laser instrument.In addition, in above-mentioned each structure, desirable is that the aforementioned laser bundle is changed into higher hamonic wave by a kind of nonlinear optical element.In addition, in above-mentioned each structure, the characteristics of aforementioned convex lens are that it is a non-spherical lens.In addition, as convex lens, meniscus shaped lens, biconvex lens, planoconvex spotlight etc. are arranged; And as convex lens of the present invention, can be in these lens any one, and the incidence surface of laser beam can be in convex lens two surfaces any one.

In each structure, the aforesaid semiconductor film is desirable for containing silicon fiml.Because the present invention has the structure of simplifying very much, light is regulated easily, and device dimensions shrink.In addition, even under the situation of using a plurality of laser beams to shine, because optical system is simplified, it is identical shaped all laser beams to be had.Handle in order to carry out uniform annealing, it is very important making a plurality of laser beams keep identical shaped.If use so a plurality of laser beams, when light beam irradiates when having large-area substrate, can improve production capacity.In addition, can use through synthesizing the light beam of a plurality of laser instruments.Moreover, because laser beam with respect to the irradiated body oblique incidence, can prevent Returning beam,, structure is simplified more among the present invention owing to spacer need be set.Therefore, can reduce cost.In addition, can effectively shine, and adopt such semiconductor that the variation of prepared TFT electrical property is reduced for the semiconductor film that forms on the substrate.Thereby also possibly use the semi-conductive operating characteristics of such TFT preparation and reliability to obtain increasing.

Description of drawings

In the accompanying drawing:

Fig. 1 is the diagrammatic sketch that the instance of optical system of the present invention is shown;

Fig. 2 illustrates the diagrammatic sketch that obtains laser beam incident angle θ with respect to illuminated object;

Fig. 3 is the instance diagrammatic sketch that the shape of the laser beam that on irradiating surface, forms according to the present invention is shown;

Fig. 4 is the instance diagrammatic sketch that is illustrated in an optical system of the present invention under the situation of using a plurality of laser beams;

Fig. 5 is the instance diagrammatic sketch that is illustrated in an optical system of the present invention under the situation of using a plurality of laser beams;

Fig. 6 is the instance diagrammatic sketch that is illustrated in an optical system of the present invention under the situation of using a plurality of laser beams;

Fig. 7 is the instance diagrammatic sketch that a conventional optical systems is shown;

Fig. 8 A is to be used to explain that a kind of pixel TFT and a kind of is used for the cross-sectional view of manufacturing step of the TFT of drive circuit to 8C;

Fig. 9 A is to be used to explain that a kind of pixel TFT and a kind of is used for the cross section circle of manufacturing step of the TFT of drive circuit to 9C;

Figure 10 is used to explain that a kind of pixel TFT and a kind of is used for the cross-sectional view of manufacturing step of the TFT of drive circuit;

Figure 11 is the vertical view that is used to explain the pixel TFT structure;

Figure 12 is a kind of cross-sectional view of active-matrix liquid crystal display device;

Figure 13 is a kind of drive circuit of luminescent device and the cross-sectional structure diagrammatic sketch of pixel portion;

Figure 14 A is the diagrammatic sketch that the semiconductor devices instance is shown to 14F;

Figure 15 A is the diagrammatic sketch that the semiconductor devices instance is shown to 15D;

Figure 16 A is the diagrammatic sketch that the semiconductor devices instance is shown to 16C;

Figure 17 illustrates the instance diagrammatic sketch that utilizes the present invention to carry out the operation of semiconductor film crystallization and pass through SEM observation semiconductor film;

Figure 18 illustrates the instance diagrammatic sketch that utilizes the present invention to carry out semiconductor film crystallization operation and examine semiconductor film through SEM at present;

Figure 19 A is that the instance diagrammatic sketch that utilizes the present invention to make TFT is shown to 19H;

Figure 20 A is that the instance diagrammatic sketch that utilizes the present invention to make TFT and measure electrical property is shown to 20B;

Figure 21 A is that the instance diagrammatic sketch that utilizes the present invention to make TFT is shown to 21C;

Figure 22 A is that the instance diagrammatic sketch that utilizes the present invention to make TFT and measure electrical property is shown to 22B;

Figure 23 A is that the instance diagrammatic sketch that utilizes the present invention to make TFT and measure electrical property is shown to 23B; And

Figure 24 illustrates the diagrammatic sketch of optical system instance of the present invention;

Figure 25 A is the ID-VG performance of TFT to be shown and to the curve map of channel length dependence to 25C, this TFT in crystallization process through with the laser beam irradiation with use the thermal crystallization of nickel to combine manufacturing with catalytic action;

Figure 26 A is to be illustrated in the crystallization process ID-VG performance of using the TFT that the laser beam irradiation makes and to the curve map of channel length dependence to 26C;

Figure 27 illustrates the curve map of ID-VG performance that the thickness of inhibition type fully is the TFT of 66nm;

Figure 28 illustrates the curve map of ID-VG performance that part depletion type thickness is the TFT of 150nm.

The specific embodiment

The embodiment pattern

In embodiment of the invention pattern, below will the method that form linear beam be described with reference to figure 1 and Fig. 2.

Go into to inject convex lens 103 by laser instrument 101 emitted laser bundles through minute surface (mirror) 102.As laser instrument 101, use the metal laser device of solid-state laser, gas laser or continuous oscillation or impulse hunting here.Should note having listed YAG laser instrument, YVO as aforementioned solid-state laser ₄Laser instrument, YLF Lasers device, YAlO ₃Laser instrument, amorphous laser, ruby laser, alaxadrite laser, Ti: sapphire laser etc.; As aforementioned gas laser, listed the CO of excimer laser, Ar laser instrument, Kr laser instrument, continuous oscillation or impulse hunting ₂Laser instrument etc., and, list He-Cd laser device, copper-vapor laser, golden vapor laser etc. as the aforementioned metal laser instrument.Then, the oscillating laser from laser instrument 101 can be converted to higher hamonic wave through a non-linear element.In addition, place expander between laser instrument 101 and the minute surface 102 or between minute surface 102 and convex lens 103, than length direction with than short beam spread to institute is being hoped size respectively.Optical beam expander is especially effective under the very little situation of the shape of laser instrument emitted laser bundle.In addition, minute surface can be do not placed, maybe a plurality of minute surfaces can be placed.

Laser beam is with respect to convex lens 103 oblique incidences.Through incident in this way,, can in according to surface or its peripheral region, form linear beam 106 owing to be moved such as the aberration focal position of astigmatism.Should be noted that if lens 103 are made up of synthetic quartz glass, is desirable, because obtain the high grade of transparency.In addition, for the coating that convex lens 103 surfaces provide, desirablely be to use wavelength with respect to the use laser beam can obtain 99% or the coating of higher transparency.In addition, for convex lens, the non-spherical lens that uses its spherical lens aberrations to be revised.If use non-spherical lens, optically focused performance increase, and length-width ratio and energy density distribution also are increased.

Then; When the linear beam 106 of formation like this shone, for example, it can be through relatively moving with respect to irradiated body 104; For example move in direction shown in the reference number 107 or reference number 108, direction shown in 109, and the institute's desired area or the whole zone of irradiation irradiated body 104." relatively move " and in fact be meant " operation places the irradiated body on the table top ".

Yet, according to the wavelength of laser beam, the lip-deep folded light beam of irradiated body with its on form between the folded light beam at the back side of substrate 105 of irradiated body 104 and mutual interference mutually possibly occur.Among Fig. 2,, shown an instance as irradiated body 04.Wherein on substrate 10, form semiconductor 11.If it is overlapping that the reflecting bundle 13 at the semiconductor film 11 lip-deep reflecting bundles 14 and substrate 10 back sides does not have, can not take place because the interference of these light beams.

In the case; When one perpendicular to being that the plane that comprises one of the rectangular long limit that is assumed to long light beam or plane of minor face is defined as the plane of incidence according to surface and it; It is desirable that the incidence angle of laser beam satisfies θ >=arctan (W/2d); Wherein W is contained in the long limit of incidence surface or the length of minor face, and d is the thickness of the substrate transparent with respect to laser beam.This W is W=(W ₁+ W ₂)/2, W at this moment ₁Be the length 15 that incides by according to surperficial laser beam, W ₂Be length from the next laser beam of the back return reflection surface of substrate 10.It should be noted that the track that on incidence surface, does not have laser beam, the projected footprint incidence angle on the incidence surface is defined as θ.If laser beam is with incidence angle θ incident, the light beam that is reflected on the substrate surface is not interfered with the folded light beam from substrate back, thereby makes laser beam uniform irradiation.Further, be the Brewster angle through the incidence angle that is set in the irradiated body surface, reflectivity reduces to minimum and laser beam is used effectively.In the above, the refractive index of substrate is 1.In the reality, the refractive index of most substrates is 1.5.When considering this value, obtain calculated value greater than top calculating gained angle.Yet because the energy on the both sides of the length direction of linear laser beam is attenuated, interference effect is very little in this section, and can be disturbed the reduction effect fully for the aforementioned calculation value.

In addition, can prevent reflectance coating in the formation of irradiated body surface.

When adopting such laser irradiation device to carry out the annealing in process of semiconductor film, corresponding semiconductor film can be obtained crystal semiconductor and can carry out the activation of impurity element through strengthening crystallinity by crystallization.

The shape that should note laser beam is according to the kind of laser instrument emission laser and difference, even laser beam is formed by optical system, it also is subject to the influence of original-shape and is easy to its change.For example, by the rectangle that is shaped as of XeCl quasi-molecule laser emitted laser bundle, and for the shape of solid-state laser emitted laser bundle, if bar be shaped as column, then become ring-type, and if be tabular, then become rectangle.The present invention is applicable to Any shape.

The present invention who comprises said structure will further describe through following illustrated embodiment.

Embodiment

Embodiment 1

In the present embodiment, will the instance that is wherein formed linear beam by the present invention be described with reference to following Fig. 1 and Fig. 3.

As laser instrument 101, use the YAG laser instrument.Suppose that the oscillating laser bundle from laser instrument 101 is converted to second higher hamonic wave by a nonlinear optical element that is contained in the laser instrument 101, at this moment, suppose that laser beam is in the TEMoo pattern, and have the beam diameter of 2.25mm and the extended corner of 0.35mrad.

Subsequently, laser beam is with respect to the incidence angle φ incident of the convex lens 103 with the burnt length of 20mm with 20 degree.Then, in the present embodiment, to being parallel to being simulated of convex lens placement according to the shape of the laser beam that forms on the surface.The result is shown in Fig. 3.By Fig. 3, can understand formed the linear laser beam of long 420 μ m, wide 40 μ m according to the surface.In addition, the Energy distribution of linear laser beam is a Gaussian distribution.

From analog result, can confirm formed linear laser beam according to the surface or in its peripheral region according to the present invention.Then, when using such laser irradiation device that semiconductor film is carried out annealing in process, corresponding semiconductor film can be obtained the crystal semiconductor film through strengthening crystallinity, and can carry out the activation of impurity by crystallization.

Embodiment 2

In the present embodiment, will describe an instance with reference to figure 4, wherein the irradiation of laser beam adopts a plurality of laser beams to carry out.As the 111a-111c laser instrument, adopt the YAG laser instrument, these laser beams are converted to second higher hamonic wave by a nonlinear optical element.Then, when by after being equipped with laser beam and passing minute surface 112a～112c of laser instrument 111a-111c emission, these laser beams are with respect to convex lens 113a～113c oblique incidence.Through oblique incidence,, formed linear beam according to surface or its peripheral region owing to be moved such as aberration focal positions such as astigmatisms.In addition, as convex lens, it is desirable using non-spherical lens.Should be noted that and placing optical beam expander between laser instrument 111a～111c and the minute surface 112a～112c or between minute surface 112a～112c and convex lens 113a～113c, hope size and the vertical and horizontal of light beam are extended to institute respectively.In addition, minute surface can be do not placed, maybe a plurality of minute surfaces can be placed.

Then, when the linear laser beam irradiation that forms thus,, for example move, can shine the institute's desired area or the whole zone of irradiated body in direction shown in the reference number 107 or reference number 108, direction shown in 109 through relatively moving with respect to irradiated body 104.

Because in the present invention, the optical system that forms linear beam has very simple structure, is easy to make a plurality of laser beams to form according to the surface at quilt and has identical shaped linear laser beam.Therefore, owing to carry out identical annealing in process with any linear laser beam irradiation arbitrary surfaces, the whole surface of irradiated body reaches and has uniform physical properties and production capacity raising.

Should notice among the present invention that though the for example clear instance that uses the light beam of three laser instruments, the quantity of laser instrument is not limited thereto, and can not use similar laser instrument.For example, also possibly use a plurality of different laser devices, desirable zone is by desirable laser illumination, and formation has the semiconductor film of different physical characteristics and on same substrate, prepares the TFT with different performance.

Embodiment 3

In the present embodiment, describe an enforcement, wherein use a plurality of laser instruments to carry out the laser beam irradiation from the both sides of irradiated body below with reference to Fig. 5.

As

laser instrument

121a, 121b, adopt the YVO of continuous oscillation ₄Laser instrument is converted into second higher hamonic wave through the nonlinear optical element laser beam.Then, after each laser beam by

laser instrument

121a, 121b emission passes

minute surface

122a, 122b, with respect to convex lens 123a, 123b oblique incidence.Through oblique incidence,, formed linear beam according to surface or its peripheral region owing to be moved such as aberration focal positions such as astigmatisms.In addition, as convex lens, it is desirable using non-spherical lens.

Should be noted that and placing optical beam expander between

laser instrument

121a, 121b and minute surface 122a, the 122b or between

minute surface

122a, 122b and convex lens 123a, 123b, hope size and the vertical and horizontal of light beam are extended to institute respectively.In addition, minute surface can be do not put, maybe a plurality of minute surfaces can be placed.

Then, when the linear laser beam irradiation that forms thus,, for example move, can shine the institute's desired area or the whole zone of irradiated body 104 in direction shown in the reference number 107 or reference number 108, direction shown in 109 through relatively moving with respect to irradiated body 104.

Because in the present invention, the optical system that forms linear beam has very simple structure, is easy to make a plurality of laser beams to form according to the surface at quilt and has identical shaped linear laser beam.Therefore, a plurality of laser beams are easy to superpose each other.Even using under the laser condition with low output according to irradiated body, it can be suitable for fully according to present embodiment.

Should note in the present invention, though the for example clear instance that uses the light beam of two laser instruments.But the quantity of laser instrument is not limited thereto, and can use the variety classes laser instrument.

Present embodiment can combine to carry out with embodiment 2 in addition.

Embodiment 4

In the present embodiment, will an instance be described, wherein through adopting a plurality of laser instruments and light beam being shone in the stack of irradiated body surface with reference to figure 6.

As laser instrument 131a, 131b, adopt the YLF Lasers device of continuous oscillation, be converted into the 3rd higher hamonic wave through the nonlinear optical element laser beam.Then, after by each laser beam of laser instrument 131a, 131b emission with respect to convex lens 133a, 133b oblique incidence.Through oblique incidence,, formed linear beam according to surface or its peripheral region owing to be moved such as aberration focal positions such as astigmatisms.In addition, as convex lens, it is desirable using non-spherical lens.

Should be noted that between laser instrument 131a, 131b and convex lens 133a, 133b and place optical beam expander, and extending to institute respectively than length direction and shorter direction and hope size light beam.In addition, minute surface can be do not placed, maybe a plurality of minute surfaces can be placed.

Should note among the present invention, though the for example clear instance that uses the light beam of two laser instruments.But the quantity of laser instrument is not limited thereto, and can use the variety classes laser instrument.In addition, though laser beam after being synthesized according to the surface, synthesizing, can form linear beam through optical system.

Present embodiment can freely combine with

embodiment

2 or 3 in addition.

Embodiment 5

Utilize Fig. 8～11 to explain a kind of manufacturing approach of active array type substrate in the present embodiment.For simplicity, a kind ofly form cmos circuit, drive circuit jointly on it, and the substrate with TFT pixel and pixel portion of certain volume (hoding capacity) is called the active array type substrate.

Fig. 8 A illustrates the formation of formation, first conducting film and second conducting film of formation, the dielectric film of formation, the semiconductor layer of basilar memebrane.

Use the substrate 400 that constitutes by glass such as barium borosilicate glass or aluminium borosilicate glass at first, in the present embodiment.Note quartz substrate, silicon chip, metal substrate, and also can be used as substrate 400 at the stainless steel substrate of its substrate surface formation dielectric film.In addition, the plastic substrate that has the resistive properties that can bear the treatment temperature of using in the present embodiment also can use.Because the present invention can be easy to form the linear beam that energy even distributes, and possibly handle large area substrates effectively through using a plurality of linear beams.

Secondly, utilize known method, on substrate 400, form by dielectric film such as silicon oxide film, silicon nitride film, or the basilar memebrane 401 that constitutes of silicon oxynitride film.In the present embodiment, basilar memebrane 401 adopts double-decker, but also can use above-mentioned individual layer dielectric film, also can use the structure of two-layer above film stack.

Secondly, on basilar memebrane, form semiconductor layer.At first, be 25～200nm (semiconductor film of preferred 30～150nm) through known method (like sputtering method, LPCVD method, and plasma CVD method) formation thickness.Then, through the laser crystallization method with the semiconductor film crystallization.As the laser crystallization method,, the semiconductor film laser beam is shone through the combination of application implementation example 1～4 any one method or embodiment 1～4 any one method.The preferred use continuously or impulse hunting solid-state laser, gas laser, or metal laser device.Note, YAG laser instrument, YVO being arranged as solid-state laser ₄Laser instrument, YLF Lasers device, YAlO ₃Laser instrument, amorphous laser, ruby laser, alaxadrite laser, Ti: sapphire laser etc.As gas laser, excimer laser, Ar laser instrument, Kr laser instrument, the CO of continuous oscillation or impulse hunting can be arranged ₂Laser instrument etc.And, He-Cd laser device, copper-vapor laser can be arranged, or golden vapor laser as the metal laser device.Certainly, not only other any known crystallization method of laser crystallization method (RTA utilizes the thermal crystallisation method of electric furnace annealing, utilizes the thermal crystallisation method of the metallic element that promotes crystallization) also can be used in combination.Semiconductor film possibly be a kind of amorphous semiconductor film, micro-crystallization semiconductor film or a kind of crystal semiconductor film.Perhaps, semiconductor film can be the compound semiconductor film with impalpable structure, like amorphous silicon germanium film.

In the present embodiment, use plasma CVD method to form the amorphous silicon film of thick 50nm, then this amorphous silicon film is used thermal crystallisation method and the laser crystallization method of utilizing the metallic element that promotes crystallization.Nickel is used as metallic element, and is imported into amorphous silicon film through the solution coatings method.Carry out 500 ℃, 5 hours heat treatment then, obtain first crystal silicon film thus.Subsequently, by the continuous oscillation YVO that is output as 10w ₄Laser instrument emitted laser bundle is converted to second higher hamonic wave by nonlinear optical element; And form linear laser beam and irradiation by one of optical system shown in the embodiment 1～4 or by the optical system that these embodiment of combination form then, obtain second crystal silicon film thus.Illuminating laser beam is to first crystal silicon film, and first crystal silicon film is changed into the crystallinity that second crystal silicon film improves second crystal silicon film.This moment, essential about 0.01～100MW/cm ²(preferred 0.1～10MW/cm ²) energy density.Table top is by the laser beam that relatively moves with the speed of 0.5～2000cm/s, and the laser beam irradiation forms crystal silicon film then.When the excimer laser that uses impulse hunting, preferred 300Hz frequency and 100～1000mj/cm ²(representative value is 200～800mj/cm ²) laser energy density.This moment, but laser beam energy repeatedly 50～98%.

Certainly, though can be through using first crystal silicon film formation TFT, because second crystalline film has the crystallinity of improvement, and the electrical property of TFT is enhanced therefore preferential second crystalline film formation TFT that uses.For example, though when forming TFT through use first crystalline film, mobility almost is 300cm ²/ Vs, but when using second crystalline film, mobility improves greatly and is about 500～600cm ²/ Vs.

Utilize photoetching method to form semiconductor layer 402～406 through on the gained semiconductor film, carrying out graphical treatment.

Be the threshold value of control TFT, after forming semiconductor layer 402～406, can carry out the doping of small amount of impurities element (boron or phosphorus).

Next forms gate insulating film 407, covers semiconductor layer 402～406.Gate insulating film 407 is to utilize plasma CVD or sputter to be formed by the silicon insulating film that contains of thick 40～150nm.In the present embodiment, film thickness is that the silicon oxynitride film of 110nm forms through the plasma CVD method.Gate insulating film is not limited to silicon oxynitride film certainly, and in individual layer or laminated construction, can use other to contain silicon insulating film.

In addition, if use silicon oxide film, can adopt TEOS (tetraethyl orthosilicate) and O through plasma CVD method ₂Mixture, reaction pressure 40Pa, substrate temperature are decided to be 300～400 ℃ of formation, and pass through at 0.5～0.8w/cm ²High frequency (13.56MHz) electrical power density transfer electric forming.Through subsequently the silicon oxide film of manufacturing like this being carried out 400～500 ℃ thermal anneal process, can obtain the high-performance gate insulating film.

Second conducting film 409 of first conducting film 408 of thick 20～100nm, and thick 100～400nm then forms and is laminated on the gate insulating film 407.First conducting film 408 that constitutes by the TaN film of thickness 30nm in the present embodiment and be formed and range upon range of by second conducting film 409 that the W film of thick 370nm constitutes.The TaN film is formed by sputter, and sputtering under the blanket of nitrogen of Ta target carried out.In addition, the W film utilizes the sputter of W target to form.In addition, W film tungsten hexafluoride (WF also capable of using ₆) form through the hot CVD method.No matter use any method, for use must can be made as the low resistance film as grid, and preferred W film is made resistivity less than 20 μ Ω cm.

Though notice that first conducting film 408 is that the TaN film and second conducting film 409 are W films in the present embodiment, conducting film do not had particular restriction.First conducting film 408 and second conducting film 409 also can be formed by a kind of element that is selected from the group that Ta, W, Mo, Ti, Al, Cu, Cr and Nd element form; Or by forming as the alloy material of mainly forming with one of above-mentioned element, or the compound of being made up of these elements forms.In addition, semiconductor film, typically, a kind of doping therein also can be used like the polycrystalline crystal silicon film of the element of phosphorus, also can use the AgPdCu alloy.

Next step utilizes photoetching method to form mask 410～415 by resist, and carries out first etching technics in order to form electrode and wiring.First etching technics carries out according to first and second etching conditions (Fig. 8 B illustrates first etching technics).In the present embodiment, use ICP (inductively coupled plasma) etching method as first etching condition.Etching gas uses CF ₄, Cl ₂And O ₂Mist, gas flow rate are set at 25: 25: 10 respectively (sccm), under 1Pa pressure, produce plasma for a coiled type electrode through applying 500W RF (13.56MHz) electrical power, and carry out etching.Also apply 150W RF (13.56MHz) electrical power in substrate one side (sample stage), applied a negative automatic bias in fact thus.The W film is etching under first etching condition, and the marginal portion of first conductive layer is etched to taper.

Do not remove the mask 410～415 that constitutes by resist, first etching condition is become second etching condition.Etching gas is CF ₄And Cl ₂Mist, gas stream element is set at 30: 30 respectively (sccm), under 1Pa pressure, produces plasma for a coiled type electrode through applying 500W RF (13.56MHz) electrical power, and about 30s etching.Also apply 20W RF (13.56MHz) electrical power in substrate one side (sample stage), applied a negative automatic bias in fact thus.The W film is all used CF according to identical order through second etching condition with the TaN film ₄And Cl ₂Mist corrosion.Attention is not stayed the etching on the gate insulating film in order there to be residue, and etch period possibly increase about 10～20%.

Meet above mentioned first etching condition through the shape that makes Etching mask, according to the bias effect that is applied to substrate, the marginal portion of first conductive layer and second conductive layer is made into taper.The angle of tapering part is 15～45 °.Form the first shape conductive layer 417～422 (first conductive layer 417a～422a, the second conductive layer 417b～422b) through first etching technics by first conductive layer and second conductive layer like this.Reference number 416 indicates gate insulating film, is not thinned about 20～50nm by the first shape conductive layer, 417～422 region covered through etching.

Do not remove the mask that resist is processed then, carry out second etching technics (Fig. 8 C illustrates second etching technics/first doping process).Here, through using CF ₄, Cl ₂And O ₂As etchant gas the W film is carried out selective corrosion.Form second conductive layer 428b～433b through second etching technics this moment.On the other hand, first conductive layer 417a～422a almost is not etched and 428～433 formation of the second shape conductive layer.

Do not remove the mask that resist processes then and carry out first doping process, be added low concentration n-type impurity element in the semiconductor layer.Doping process carries out through ion doping method or ion implantation.The process conditions of ion doping are: dopant dose is decided to be 1 * 10 ¹³～5 * 10 ¹⁴/ cm ², and accelerating potential is set in 40～80Kev.Dopant dose is decided to be 1.5 * 10 in the present embodiment ¹³/ cm ², accelerating potential is set in 60Kev and mixes.A kind of element that belongs to 15 families typically is phosphorus (P) or arsenic (As) is used as n-type doped chemical.Adopt phosphorus (P) here.In this case, conductive layer 428～433 plays the mask effect with respect to n-type conductiving doping element, and doped region 423～427 forms with self-aligned manner.N-type impurity element is added to 423～427 zones, and concentration range is 1 * 10 ¹¹～1 * 10 ²⁰/ cm ³

Secondly, remove the mask that resist is processed, form mask 434a～434c that new resist is processed, and be higher than at accelerating potential and carry out second doping process under first doping process.The process conditions that ion doping carries out are: dopant dose is decided to be 1 * 10 ¹³～1 * 10 ¹⁵/ cm ², and accelerating potential is set in 60～120Kev.Doping process carries out as mask with second conductive layer 428b～432b, and the semiconductor layer below the first conductive layer tapering part is added impurity element.Then will speed up voltage drop and be low to moderate and be lower than second doping process, carry out the 3rd doping process, and obtain state (Fig. 9 A illustrates second doping process/the 3rd doping process) shown in Fig. 9 A.The condition of ion doping method is: dopant dose is made as 1 * 10 ¹⁵～1 * 10 ¹⁷/ cm ², and accelerating potential is set in 50～100Kev.The low concentration doping district 436,422 and 448 overlapping with first conductive layer is added doped chemical, and this doped chemical is 1 * 10 ¹⁸～5 * 10 ¹⁹/ cm ²Forming the n-type through the second and the 3rd doping process in the concentration range, is 1 * 10 and add concentration range ¹⁹～5 * 10 ²¹/ cm ²N-type doped chemical form high-concentration dopant district 435,441,444 and 447.

Certainly, have suitable accelerating potential through making technology, the second and the 3rd doping process can once be accomplished, and possibly form low concentration doping zone and high-concentration dopant zone.

Secondly, remove the mask that resist is processed, form mask 450a～450c that new resist is processed, and carry out the 4th doping process.In the semiconductor film of the active layer that becomes p-channel-type TFT, form doped region 453,454,459 and 460 according to the 4th doping process, wherein added the doped chemical of conduction type and above-mentioned conductivity type opposite.With respect to doped chemical, second conductive layer 429b～432b is used as mask, and p-type electric conductivity doped chemical is added into self-aligned manner formation doped region.(Fig. 9 B illustrates the 4th doping process) adopted diborane (B in the present embodiment ₂H ₆) form doped region 453,454,459 and 460 through the ion doping method.When carrying out the 4th doping process, be used to form mask 450a～450c that the semiconductor layer of n-channel-type TFT processed by resist and cover.Through first to the 3rd doping process, phosphorus is added doped region 439 and 447 with variable concentrations.Yet, become 1 * 10 in each regional concentration through making p-type electric conductivity doped chemical ¹⁹～5 * 10 ²¹Atom/cm ³Doping, when making these zones become source region and the drain region of p-channel-type TFT, can not go wrong.

Through step so far, form impurity range at each semiconductor layer.

Secondly, remove the mask 450a～450c that processes by resist after, first interlayer dielectric 461 is formed.This first interlayer dielectric is processed by containing silicon insulating film, and thickness is 100～200nm, forms through plasma CVD or sputtering method.Formed the silicon oxynitride film of thick 150nm in the present embodiment through plasma CVD method.As individual layer or laminated construction, first interlayer dielectric is not limited only to silicon oxynitride film certainly, also can use other to contain silicon insulating film.

Subsequently, through laser beam irradiation, shown in Fig. 9 C (Fig. 9 C illustrates the formation/laser beam irradiation/heat treatment of first interlayer dielectric), carry out the crystalline recovery of semiconductor layer and be doped to the activation of the impurity element of each semiconductor layer.For laser active, through one of in the application implementation example 1～4 or with the independent assortment of these embodiment, illuminating laser beam is to semiconductor film.The preferred use continuously or impulse hunting solid-state laser, gas laser or metal laser device.Attention can have YAG laser instrument, the YVO of continuous oscillation or impulse hunting as solid-state laser ₄Laser instrument, YLF Lasers device, YAlO ₃Laser instrument, amorphous laser, ruby laser, alaxadrite laser, Ti: sapphire laser etc.As gas laser, continuous oscillation or impulse hunting excimer laser, Ar laser instrument, Kr laser instrument, CO can be arranged ₂Laser instrument etc.And, He-Cd laser device, copper-vapor laser or golden vapor laser can be arranged as the metal laser device.If use the continuous oscillation laser instrument this moment, essential about 0.01～100MW/cm ²(preferred 0.1～10MW/cm ²) laser beam energy density.Substrate moves relative to the speed of laser beam with about 0.5～2000cm/s.And if used the pulsed oscillation laser device, preferred frequency of utilization would be 300Hz and 50～1000mj/cm ²(representative value is 50～500mj/cm ²) laser energy density.Laser beam overlapping 50～98% this moment.Except that the laser annealing processing method, can use thermal annealing method or rapid thermal annealing method (RTA method) etc.

In addition, activate also and can before first interlayer dielectric forms, carry out.Yet, the same if used wiring material is thermo-labile as in the present embodiment, in order to protect wiring etc., activate again after being preferably formed interlayer dielectric (making the main dielectric film that constitutes, the for example silicon nitride formed) with silicon.

Then, also can heat-treat (300～550 ℃, 1～12 hour), and possibly carry out hydrogenation treatment.This technology is a kind ofly to stop the method for dangling bonds in the semiconductor layer through being contained in hydrogen in first interlayer dielectric 461.No matter whether first interlayer dielectric exists, and semiconductor layer all can be hydrogenated.Plasma hydrogenization (hydrogen that using plasma excites), and the heat treatment of in hydrogeneous 3～100% atmosphere, carrying out 300～450 ℃, 1～12 hour also can be used as other hydrogenation means and is used.

Subsequently, on first interlayer dielectric 461, form second interlayer dielectric of processing by inorganic insulating material or organic insulation 462.Formed the acrylic resin film of thickness 1.6 μ m in the present embodiment, and material therefor can have the viscosity of 10～1000cp, preferred value is 40～200cp.Use forms scraggly material on its surface.

In order to stop the minute surface reflection, in the present embodiment,, make the surface of pixel electrode become rough and uneven in surface through forming scraggly second interlayer dielectric in surface.In addition, pixel electrode surface can be made into rough and uneven in surface and have light scattering characteristic, and therefore the zone of below pixel electrode forms convex portions.Convex portions also can form through the photomask same with forming TFT, and it can form not increasing under the processing step situation.Notice that convex portions also can roughly form on the substrate of the pixel portion of removing wiring and TFT.Thus, rough and uneven in surface along what in the dielectric film surface that covers convex portions, form, in pixel electrode surface, form rough and uneven in surface.

Film with horizontal surface also can be used as second interlayer dielectric 462.In the case, preferentially use additional process such as known sand-blast or etching technics to form surface irregularity,, and therefore increase whiteness through scattered reflection light with the prevention flat mirror reflects.

In drive circuit 506, be formed for being electrically connected the wiring 463～467 of each impurity range then.Attention is in order to form wiring, and the stack membrane of the Ti film of thick 50nm and the alloy film of thick 500nm (Al and Ti alloy) is carried out graphically.Certainly, be not limited to double-layer structure, single layer structure or the laminated construction more than three layers also are acceptables.In addition, wiring material is not limited to Al and Ti.For example, on the TaN film, form Al and Cu, and also form wiring (Figure 10) through the graphical Ti of formation stack membrane.

In addition, form pixel electrode 470, grating routing 469 in pixel portion 507, and connection electrode 468.Form the electrical connection of pixel TFT and source wiring through connection electrode 468.In addition, grating routing 469 forms with the grid of pixel TFT and is electrically connected.The drain region 444 of pixel electrode 470 and pixel TFT forms and is electrically connected, and in addition, is electrically connected with semiconductor layer 459 formation as the electrode of a formation holding capacitor.The preferential material that uses with high reflectance, as with Al and Ag as its film of mainly forming, or the stack membrane as pixel electrode 470.

Can on same substrate, form the cmos circuit of forming by n-channel TFT 501 and p-channel TFT 502, drive circuit 506 like this with n-channel TFT 503, and the pixel portion 507 with pixel TFT 504 and holding capacitor 505.Accomplish active matrix substrate thus.

The n-channel TFT 501 of drive circuit 506 has: channel formation region 437; With the overlapping low concentration impurity district 436 of the first conductive layer 428a as a formation grid part; And as the high concentration impurities district 452 in source region or drain region.P-channel TFT 502, it has through being electrically connected and n-channel TFT 501 and electrode 466 formation cmos circuits; Channel formation region 455; Low concentration impurity district 454; And the impurity range 453 of wherein introducing n-type and p-type impurity element.In addition, n-type TFT503 has: channel formation region 443; With the overlapping low concentration impurity district 442 (Jin Qu) of the first conductive layer 430a that constitutes a grid part; And as the high concentration impurities district 441 in source region or drain region.

The pixel TFT 504 of pixel portion has: channel formation region 446; Be formed at the low concentration impurity district 445 (LDD district) in the grid outside; And as the high concentration impurities district 458 in source region or drain region.In addition, n-type and p-type impurity element are added in the semiconductor layer as an electrode of holding capacitor 505.Holding capacitor 505 is made up of electrode (lamination of 432a and 432b) and semiconductor layer, and dielectric film 416 is as dielectric.

For the dot structure of present embodiment, the overlapping placement of the marginal portion of pixel electrode and source wiring, so that the shielding of the gap between pixel electrode light, and needn't use black matrix (blackmatrix).

The upper surface of the pixel portion of the active matrix substrate of making in the present embodiment is shown in figure 11.Attention is represented with identical reference symbol corresponding to the part of Fig. 8～11.Chain-dotted line A-A among Figure 10 cuts the cross-sectional view that obtains corresponding to Figure 11 along chain-dotted line A-A '.In addition, the cross-sectional view that chain-dotted line B-B ' obtains along chain-dotted line B-B ' cutting corresponding to Figure 11 among Figure 10.

Embodiment 6

Below explain the technology of the active matrix substrate manufacturing reflection LCD of making by embodiment 5 in the present embodiment.Use Figure 12 in the explanation.

Active matrix substrate under Figure 10 state at first obtains according to embodiment 5, at least one pixel electrode 470 on the active matrix substrate of circle 10, forms alignment films 567 then, and polishes (rubbing) technology.Note,, form in the present embodiment before the alignment films 567,, form column isolating pad 572 in institute's desired location through being organic resin such as acrylic resin film figuresization for keeping the gap between substrate.In addition, substitute the column isolating pad and also can form spherical isolating pad on the whole surface of substrate.

Next prepares relative substrate 569.Forming color layer 570 and 571 on the substrate 569 relatively then, and leveling film 573.Red color layer 570 overlaps to form the light shield part with blue chromatograph 571.In addition, also can form the light shield part through red color layer and green layer are overlapped.

Use substrate shown in the embodiment 5 in the present embodiment.Therefore; Vertical view for the pixel portion of embodiment 5 shown in figure 11; Have at least necessity to make the gap of 468 of gap, grid wiring 469 and the connection electrode of 470 of grid wiring 469 and pixel electrodes, and the gap of 470 of connection electrode 468 and pixel electrodes does not receive illumination.Each color layer is so arranged so that the shading light part that the lamination of chromatic colour layer makes must illumination penetrate less than the position form, link together with relative substrate then.

The feasible like this shading light part that is made up of the color layer lamination through use carries out the light shield of each interpixel gap, and needn't form such as light shielding layers such as black masks to reduce processing step becomes possibility.

At least on the leveling film 573 on the pixel portion, form the comparative electrode of processing by nesa coating 576, form alignment films 574 on the whole surface of relative substrate, and polish technology.

The active matrix substrate that forms pixel portion and drive circuit on it is formed, and is connected with relative substrate through encapsulant 568 then.Sneak into filler in the encapsulant 568, and two substrates are connected, keep uniform gap according to filler and column isolating pad simultaneously.Between two substrates, inject liquid crystal material 575 then, and substrate is through using sealant (not expressing among the figure) by sealing fully.A kind of known liquid crystal material can be used as liquid crystal material 575.Accomplish reflective type liquid crystal display device shown in Figure 12 thus.Active matrix substrate or relative substrate are cut into institute's desirable shape if necessary then.In addition, only adhering to a polarising sheet (not shown) on the substrate relatively.Utilize known technology to adhere to FPC then.

The LCD of being processed by said method has the TFT that makes through the semiconductor film of thorough annealing in process through using, because the unusual laser beam uniformly of Energy distribution is used to irradiation.It might become and has a kind of of enough operating features and reliability in the LCD above-mentioned.Such LCD can be used as the display part of different electronic installations.

It is possible that attention freely is used in combination present embodiment with embodiment 1～5.

Embodiment 7

In the present embodiment, the instance that a manufacturing approach that is used to form the TFT of active matrix substrate through use is made luminescent device has been described.In this manual, luminescent device is to comprising the display floater that is formed on the on-chip light-emitting component between aforementioned substrate and the cover and to the general designation of the display module of the aforementioned assembling TFT that has an aforementioned display floater.By way of parenthesis, light-emitting component has the layer of an inclusion compound, wherein through applying electric field (luminescent layer), anode and negative electrode, can obtain electroluminescent.Simultaneously, the electroluminescent in the organic compound comprises from singlet excited and turns back to the light (fluorescence) of ground state emission and turn back to the light (phosphorescence) of ground state emission from triplet excited state, comprises wherein any one or two kinds and all comprises.

In this explanation, all layers that between the negative electrode of light-emitting component and anode, form are defined as organic luminous layer.Luminescent layer, hole injection layer, electron injecting layer, hole transport layer, and electron transport layer etc. is also contained in the organic luminous layer in fact.Light-emitting component has the structure of anode layer, luminescent layer and cathode layer order lamination basically.Except that this structure, light-emitting component also has the structure of anode layer, hole injection layer, luminescent layer and cathode layer sequential cascade or the structure of sequential cascades such as anode layer, hole injection layer, luminescent layer, hole transport layer and cathode layer.

Figure 13 is the sectional drawing of a luminescent device of present embodiment.Among Figure 13, the switching TFT 603 of configuration on the substrate 700 forms through the n-channel TFT 503 of using Figure 10.Thereby, about the explanation of structure, be gratifying with reference to explanation about n-channel TFT 503.

By way of parenthesis, though this instance is a double-grid structure that is formed by two channel regions, also possibly use device of single gate structure that forms by a channel region or three grid structures that form by three channel regions.

The drive circuit of configuration forms through the cmos circuit of Figure 10 on the substrate 700.Thereby, about the explanation of structure, be gratifying with reference to the explanation of n-channel TFT 601 and p-channel TFT 602.By way of parenthesis, though present embodiment is a device of single gate structure, might use double-grid structure or three grid structures.

Simultaneously, wiring 701,703 is connected up as the source wiring of cmos circuit and 702 is leak routing.Simultaneously, wiring 704 is as the electric connection line in the source region of source wiring 708 and switching TFT, and 705 electric connection lines as the drain region of leak routing 709 and switching TFT that connect up.

By way of parenthesis, form Current Control TFT604 through the p-channel TFT 502 of using Figure 10.Therefore, about the explanation of structure, can be satisfied with referring to explanation about p-channel TFT 502.Incidentally, though present embodiment is a device of single gate structure, it is possible adopting double-grid structure or three grid structures.

Simultaneously, wiring 706 is source wirings of Current Control TFT (with respect to electric current supplying wire), 707 is electrodes that are electrically connected to pixel electrode 711 and connect up.

Simultaneously, reference number 711 is represented one by the film formed pixel electrode of electrically conducting transparent (anode of light-emitting component).As nesa coating, can use the compound of indium oxide and tin oxide, the compound of indium oxide and zinc oxide, zinc oxide, tin oxide or indium oxide perhaps add the above-mentioned nesa coating of gallium.Pixel electrode 711 is formed on the plane interlayer dielectric 710 prior to wiring and forms.In the present embodiment, through using resin planarization film 710 to make because the step complanation that TFT produces is very important.The luminescent layer that forms subsequently, because its very thin thickness, because the existence of step possibly cause weak light emission, desirable is before forming pixel electrode, to carry out complanation, to form flat as far as possible luminescent layer.

After forming wiring 701～707, formation dykes and dams shown in figure 13 (bank) 712.Dykes and dams 712 can form through siliceous organic resin film or the dielectric film of graphical thick 100～400nm.

By way of parenthesis, because dykes and dams 712 are dielectric films, the electrostatic breakdown of the element of taking every caution against error in the deposition process.In the present embodiment, add carbon granule or metallic particles, reduce resistivity thus and suppress generation of static electricity at the insulating film material that is used for dykes and dams 712.In the case, the addition of scalable carbon or metallic particles is to obtain 1 * 10 ⁶～1 * 10 ¹²Ω m (preferred 1 * 10 ⁸～1 * 10 ¹⁰Ω m) resistivity.

On pixel electrode 711, form luminescent layer 713.By way of parenthesis, though Figure 13 only demonstrates a pixel, present embodiment forms the luminescent layer corresponding to different colours R (redness), G (green) and B (blue look) respectively.Simultaneously, formed the organic luminous layer of low molecular wt in the present embodiment through depositing technics.Especially, this is a laminated construction, has (CuPc) film of the copper phthalocyanine as hole injection layer and the thick 70nm of thick 20nm three (oxine base) aluminium (tris-8-qyuinolinolato aluminium) compound (Alq as luminescent layer on it ₃) film.Radiative color can be passed through at Alq ₃Middle interpolation fluorchrome such as quinoline a word used for translation ketone, perylene or DCMl control.

But previous embodiment is the embodiment of organic light-emitting material as luminescent layer, and not necessarily is limited to this material.Through luminescent layer, charge-transport layer and electron injecting layer freely being combined form luminescent layer (this layer is used for light emission and carrier moving).For example, use the embodiment of organic light-emitting material of low molecular wt, can use the luminous organic material of intermediate molecular weight or HMW as luminescent layer though present embodiment has shown.In addition, do not distil and have 20 or less than 20 molecular number or have 10 μ m or be used as the intermediate molecular weight luminous organic material less than the luminous organic material of the chain molecule of 10 μ m.For the luminous organic material that uses HMW; Form the thick polythiophene as hole injection layer (PEDOT) film of 20nm through spin-coating method, and formation possibly be good as the thick laminated construction that gathers contraposition phenylethylene (paraphenylenvinylene PPV) film of the 100nm of luminescent layer on it.Through using π covalent type polymer P PV, can select emission wavelength from red to orchid.Simultaneously, can use inorganic material such as carborundum as electron transport layer or electric charge injection layer.But these organic light-emitting materials or phosphor known materials.

Secondly, on luminescent layer 713, form the negative electrode 714 of conducting film.In the present embodiment, use aluminium and lithium alloy film as conducting film.Certainly, known MgAg film (alloy film of magnesium and silver) also can use.Belong in the periodic table first or the conducting film that forms of the element of second family or the conducting film that adds these elements can be used as cathode material.

Until forming negative electrode 714, light-emitting component completes.By way of parenthesis, the light-emitting component 715 here refers to have the diode of pixel electrode (anode) 711, luminescent layer 713 and negative electrode 714.

It is effectively that the passivating film 716 of a complete covering luminous element 715 is provided.Passivating film is formed by the dielectric film that contains carbon film, silicon nitride film or silicon oxynitride film, and employed is the dielectric film of individual layer or composite lamainated structure.

In the case, the preferential film that helps covering that uses is as passivating film.It is effective using carbon film, particularly DLC (diamond-like-carbon) film.The DLC film can form be no more than 100 ℃ scope from room temperature in deposit, can easily be deposited on the luminescent layer 713 of low thermal resistance.Simultaneously, the DLC film has high blocking effect to oxygen, and it is oxidized to suppress luminescent layer 713.Therefore, can prevent the problem of oxidation of luminescent layer 713 in below the seal process.

In addition, seal 717 is provided on passivating film 716, is used to weld cover 718.But employed seal 717 can be a ultraviolet curable resin.It is effective that a kind of material with hygroscopic effect or antiopxidant effect is provided therein.Simultaneously, in the present embodiment, for cover 718 employings are glass substrate, quartz substrate or the plastic substrates (comprising plastic foil) that form carbon films (preferred class diamond film) on its two surface.Except that carbon film, aluminium film (like AlON, AlN and AlO), SiN etc. are used.

Like this, the luminescent device that has a structure shown in Figure 13 is done.By way of parenthesis, the deposition apparatus through using multicell scheme (or (in-line) scheme of embarking on journey) is not exposed to atmosphere after forming dykes and dams 712, and it is effective forming passivating film 712 technologies continuously.In addition,, can not expose atmosphere, proceed technology up to welding cover 718 for further preparation.

In this way, on substrate 700, form n-channel TFT 601 and 602, switching TFT (n-channel TFT) 603 and Current Control TFT604 (p-channel TFT).

In addition, illustrated as Figure 13, through providing, can form the n-channel TFT of the damage that the heatproof carrier effect causes through the impurity range of dielectric film in grid overlap joint.Therefore, can obtain the luminescent device of high reliability.

Simultaneously, present embodiment has only shown the structure of pixel portion and drive circuit.Yet,,, can on identical insulating part, form like logic circuits such as signal packet circuit, D/A converter, operational amplifier, checking gamma circuits except that these according to the manufacturing process of present embodiment.In addition, can form memory or microprocessor.

The luminescent device that forms through said method has the film formed TFT of semiconductor that uses thorough annealing in process, because the irradiation semiconductor film has very excellent homogeneous energy distribution with laser beam.Therefore, above-mentioned luminescent device obtains enough operating characteristic and reliability.Such luminescent device can be used as the display part of various electronic equipments.

By way of parenthesis, present embodiment can with embodiment 1～5 any combination.

Embodiment 8

In the present embodiment, describe through using optical system to carry out the embodiment of semiconductor film crystallization with reference to figure 1 and Figure 17.

In the present embodiment, through plasma CVD method form on as the glass-film of basilar memebrane thick 400nm silicon oxynitride film (proportion of composing is Si=32%, O=59%, N=7%, H=2%).Subsequently, through plasma CVD method, form the amorphous silicon film of thick 150nm on as the basilar memebrane of semiconductor film.The hydrogen that is contained in the semiconductor film is removed through 500 ℃ of heat treatments of 3 hours.Handle the crystallization of carrying out semiconductor film through laser annealing then.The crystallization of semiconductor film is carried out under the condition of laser annealing facture, in this method, uses YVO ₄The second harmonic of laser instrument is made laser beam, and laser beam is set to 18 ° with respect to the incidence angle φ of the convex lens 103 of optical system shown in Figure 1, and to form the rectangle laser beam, the speed mobile substrate with 50cm/s shines semiconductor film thus.

Crystal semiconductor film to obtaining thus carries out the seco-etching processing, utilizes the result on 1000 times SBM (ESEM) observation crystal semiconductor film surface to be shown in Figure 17.Notice that the seco solution in the seco-etching is a kind of use K ₂Cr ₂O ₇As HF: H ₂O=2: 1 additive makes solution.Figure 17 is through the relative scanning of direction shown in arrow laser beam acquisition in the drawings, and Figure 17 has shown the pattern that has formed bulky grain size crystal grain in the direction perpendicular to the scanning direction.

Therefore, owing in semiconductor film, formed bulky grain size crystal grain, wherein crystallization the application of the invention is carried out, and when making TFT through the use semiconductor film, the number of grain boundaries that possibly be contained in channel formation region possibly be reduced.In addition, because single crystal grain has the crystallinity that in fact can be considered to monocrystalline, can obtain to be equal to or greater than the transistorized high mobility (field-effect mobility) that uses single crystal semiconductor.

In addition, because the crystal grain that forms becomes complete in a direction, the quantity that carrier crosses crystal boundary significantly reduces.Therefore, can reduce ON state current value (flowing into the drain current value under the TFT ON state), off-state current value (flowing into the drain current value under the TFT OFF state), threshold voltage, S value, and the variation of field-effect mobility.Electrical characteristics are improved greatly.

Embodiment 9

Present embodiment is described with reference to figure 1 and Figure 18 and is utilized the method that is different from embodiment 8 to carry out the instance of semiconductor film crystallization.

According to embodiment 8, form amorphous silicon film as semiconductor film.In addition; Through using the method for Japan Patent Laid-open NO.Hei7-183540 record; Adopt spin-coating method with hydration nickel acetate solution (weight conversion concentration 5ppm; Volume 10ml) is applied to the semiconductor film surface, to carry out following 500 ℃ of heat treatments of 1 hour of blanket of nitrogen and following 550 ℃ of heat treatments of 12 hours of blanket of nitrogen.Handle through laser annealing subsequently and carry out the crystalline improvement of semiconductor film.The crystalline improvement of semiconductor film is under the condition of laser annealing facture, to carry out, and promptly uses YVO ₄The second harmonic of laser instrument is made laser beam, and laser beam is set to 18 ° with respect to the incidence angle φ of the convex lens 103 of optical system shown in Figure 1, and to form the rectangle laser beam, the speed mobile substrate with 50cm/s shines semiconductor film thus.

Crystal semiconductor film to obtaining thus carries out the seco-etching, and utilizes 1000 times SBM that the surface of crystal semiconductor film is observed.Observed result is shown in Figure 18.The observed result of Figure 18 obtains through relative scanning laser beam along the direction of arrow in the figure, and Figure 18 has shown the pattern that has formed bulky grain size crystal grain in the direction perpendicular to the scanning direction.It is characterized in that crystal grain shown in Figure 180 is forming less crystal boundary with laser beam relative scanning direction is crisscross than crystal grain shown in Figure 17.

In addition, because the crystal grain that forms becomes complete in a direction, the quantity that carrier crosses crystal boundary significantly reduces.Therefore, can reduce ON state current value, off-state current value, threshold voltage, S value, and the variation of field-effect mobility.And electrical characteristics are improved greatly.

Embodiment 10

Present embodiment will be described through adopting optical system of the present invention to carry out the semiconductor film crystallization and passing through to use semiconductor film to make the instance of TFT with reference to figure 1, Figure 19 and Figure 20.Wherein Figure 19 A illustrates the formation of underlying insulation film and the formation of semiconductor film; Figure 19 B illustrates the crystallization of semiconductor film, and Figure 19 C illustrates first doping process, and Figure 19 D illustrates first etching technics, dielectric film forms and the formation of conducting film; Figure 19 E illustrates second etching technics and second doping process; Figure 19 F illustrates the 3rd doping process, and Figure 19 G illustrates illustrating of first interlayer dielectric and heat treatment, and Figure 19 H illustrates the formation of formation, hydrogenation process and the wiring of second interlayer dielectric.

In the present embodiment, glass-film is used as substrate 20, utilizes silicon oxynitride film (the proportion of composing Si=32% of plasma CVD method with thick 50nm; O=27%, N=24%, H=17%); And the silicon oxynitride film of thick 100nm (proportion of composing Si=32%; O=59%, N=7% H=2%) is layered on the glass substrate.Subsequently, form the amorphous silicon film of thick 150nm on as the basilar memebrane 21 of semiconductor film 22 through plasma CVD method.Hydrogeneous through institute in 500 ℃ of 3 hours heat treatments removal semiconductor films.Then, use YVO ₄The second harmonic of laser instrument is made the laser beam laser beam and is set to 18 ° with respect to the incidence angle φ of the convex lens 103 of optical system shown in Figure 1, and to form the rectangle laser beam, the speed mobile substrate with 50cm/s scans semiconductor film (Figure 19 B) thus.

Carry out first doping process subsequently.First doping process is the channel doping of control threshold value.First doping process is through using B ₂H ₆As material gas, gas flow rate is set at 30sccm, and current density is 0.05A, and accelerating potential is that 60KV and dopant dose are 1 * 10 ¹⁴/ cm ²Carry out (Figure 19 C) under the condition.

Subsequently, carry out graphical semiconductor film 24, form as the be etched silicon oxynitride film of thick 115nm of gate insulating film 27 of semiconductor film of covering through plasma CVD method then according to reservation shape.Subsequently, be laminated in (Figure 19 D) on the gate insulating film 27 as the TaN film 28 of the thick 30nm of conducting film and the W film 29 of thick 370nm.

Form the mask (not shown) processed by resist with etching W film, TaN film and gate insulating film through photoetching.

Subsequently, remove the mask of processing by resist, form new mask 33, thus n-type impurity element is introduced semiconductor film to carry out second doping process.In the case, conductive layer 30 and 31 becomes mask respectively with respect to n-type impurity element, and forms impurity range 34 through self-aligned manner.In the present embodiment and since the thickness of semiconductor film very thick be 150nm, so second doping process is divided into two kinds of conditions and carries out.In the present embodiment, at first second doping process under the first condition is through using hydrogen phosphide (PH ₃) as material gas, and the setting dopant dose is 2 * 10 ¹³/ cm ²Accelerating potential is to carry out under the 90KV condition.Second doping process under the second condition is to be 5 * 10 through setting dopant dose then ¹⁴/ cm ²Accelerating potential is to carry out (Figure 19 E) under the 10KV condition.

Subsequently, remove the mask of processing by photoresist 33, form the new mask of forming by resist 35, and carry out the 3rd doping process.Through the 3rd doping process, a kind of impurity element of conductivity type opposite is added to impurity range 36.Impurity range 36 forms in the semiconductor film of the active layer that becomes the p-channel TFT.Conductive layer 30 and 31 is used as the mask of impurity element and adds p-type impurity element to form impurity range 36 through self-aligned manner.In the present embodiment and since the thickness of semiconductor film very thick be 150nm, so the 3rd doping process also is divided into two kinds of conditions and carries out.In the present embodiment, the 3rd doping process under the first condition is through using hydrogen phosphide (PH3) as material gas, and to set dopant dose be 2 * 10 ¹³/ cm ²Accelerating potential is to carry out under the 90KV condition.The 3rd doping process under the second condition is to be 1 * 10 through setting dopant dose then ¹⁵/ cm ²Accelerating potential is to carry out (Figure 19 F) under the 10KV condition.

Through step so far, in each semiconductor layer, form impurity range 34 and 36.

Secondly, the mask of being processed by resist 35 is removed, and (proportion of composing Si=32.8%, O=63.7% is H=3.5%) as first interlayer dielectric 37 to form the silicon oxynitride film of thick 50nm through plasma CVD method.

Secondly, carry out the crystalline recovery of semiconductor layer through heat treatment and add the activation of the impurity element of each semiconductor layer to.In the present embodiment, heat treatment is through the thermal anneal process method, uses annealing furnace in blanket of nitrogen, to carry out (Figure 19 G) in 550 ℃ under 4 hours.

Secondly, on first interlayer dielectric 37, form second interlayer dielectric 38 that constitutes by organic insulation membrane material or inorganic insulating material.In the present embodiment, form the silicon nitride film of thick 50nm, form the silicon oxide film of thick 400nm then through the CVD method.

Secondly, can carry out dehydrogenating technology after the heat treatment.In the present embodiment, heat treatment is carried out under 1 hour in 410 ℃ in blanket of nitrogen through using annealing furnace.

Subsequently, form the wiring 39 that is electrically connected to each impurity range.In the present embodiment, graphically form the stack membrane that the Ti film of Al-Si film and the thick 50nm of the Ti film of thick 50nm, thick 500nm is formed.Certainly, being not limited to double-layer structure, also can be single layer structure or the laminated construction more than three layers or three layers.In addition, wiring material is not limited to Al and Ti.For example, wiring can be through forming Al or Cu and the stack membrane that forms the Ti film on it graphically being formed (Figure 19 H) on the TaN film.

As stated, n-channel TFT 51 and p-channel TFT 52 have been formed.

Through measuring electrical characteristics, the electrical property of n-channel TFT 51 is shown in Figure 20 A, and the electrical property of p-channel TFT 52 is shown in Figure 20 B.As the measuring condition of electrical characteristics, measurement point is assumed to 2 points, and grid voltage (Vg) is set to-and 16～16V and drain voltage be set to 1V and 5V.In addition, in Figure 20 A and Figure 20 B, drain current (ID) and grid current (ID) are represented with solid line, and mobility (μ FE) is represented with chain-dotted line.

Figure 20 A and 20B show that the electrical characteristics of the TFT of the application of the invention manufacturing significantly improve.When using semiconductor film to make TFT, the grain boundary quantity that is contained in channel formation region possibly reduce, and this is that these large scale crystal grain are that the application of the invention forms owing in semiconductor film, form large scale crystal grain.In addition, because crystal grain forms at equidirectional, can significantly reduce the quantity of the carrier that crosses crystal boundary.Therefore, the mobility in the n-channel TFT is 524cm ²/ Vs, the mobility in the p-channel TFT is 205cm ²/ Vs.When semiconductor devices used such TFT to make, its mobility characteristics and reliability can be enhanced.

Embodiment 11

In the present embodiment, will be with reference to figure 1,21A～21C, 22A～22B, and 23A～23B describes through the method that is different from embodiment 10 and carries out the semiconductor film crystallization and through using semiconductor film to make the instance of TFT.

According to embodiment 10, form an amorphous silicon film as semiconductor film.In addition; Through using the method for Japan Patent Laid-open NO.Hei7-183540 record; Adopt spin-coating method that hydration nickel acetate solution (weight conversion concentration 5ppm, volume 10ml) is applied to the semiconductor film surface, form a metal-containing layer 41 (Figure 21 A illustrates the formation of metallic layer) thus.Carry out following 500 ℃ of heat treatments of 1 hour of blanket of nitrogen and following 550 ℃ of heat treatments of 12 hours of blanket of nitrogen (Figure 21 B illustrates heat treatment) then.Handle through laser annealing subsequently and carry out the crystalline improvement of semiconductor film.The crystalline improvement of semiconductor film is under the condition of laser annealing facture, to carry out, and promptly uses YVO ₄The second harmonic of laser instrument is made laser beam; Laser beam is set to 18 ° with respect to the incidence angle φ of the convex lens 103 of optical system shown in Figure 1; To form the rectangle laser beam, the speed mobile substrate with 20cm/s or 50cm/s shines the crystallinity (Figure 21 C illustrate laser annealing) of semiconductor film to improve semiconductor film thus.

According to embodiment 10, after this form a n-channel TFT 51 and p-channel TFT 52.Measure the electrical characteristics of n-channel TFT 51 and p-channel TFT 52; Then respectively; In the laser annealing treatment step, the electrical characteristics of the n-channel TFT 51 that makes with the speed mobile substrate of 20cm/s are shown in Figure 22 A, and the electrical characteristics of the p-channel TFT 52 that makes with the speed mobile substrate of 20cm/s are shown in Figure 22 B; The electrical characteristics of the n-channel TFT 51 that makes with the speed mobile substrate of 50cm/s are shown in Figure 23 A, and the electrical characteristics of the p-channel TFT 52 that makes with the speed mobile substrate of 50cm/s are shown in Figure 23 B.As the measuring condition of electrical characteristics, measurement point is assumed to 2 points, and grid voltage (Vg) and drain voltage (Vd) are set at respectively-16～16V and 1.5V.In addition, in Figure 22 A～22B and Figure 23 A～23B, drain current (ID) and grid current (ID) are represented with solid line, and mobility (μ FE) is represented with chain-dotted line.

Figure 22 A～22B and Figure 23 A～23B show that the electrical characteristics of the TFT of the application of the invention manufacturing significantly improve.When using semiconductor film to make TFT, the number of grain boundaries that is contained in channel formation region possibly reduce, and this is that these large scale crystal grain are that the application of the invention forms owing in semiconductor film, form large scale crystal grain.In addition, since formed crystal grain become complete and, can significantly reduce the quantity of the carrier that crosses crystal boundary in direction almost not having crystal boundary to form with laser relative scanning direction is crisscross.Therefore, the mobility in the n-channel TFT is 510cm among Figure 22 A～22B ²Mobility in/Vs and the p-channel TFT is 200cm ²/ Vs, and the mobility in the n-channel TFT is 595cm among Figure 23 A～23B ²Mobility in/Vs and the p-channel TFT is 199cm ²/ Vs is understandable, and these mobilities are very good.When semiconductor devices used such TFT to make, its mobility characteristics and reliability can be enhanced.

Embodiment 12

In embodiment 10 and 11, shown the embodiment that wherein makes TFT through the crystallization method that differs from one another.In present embodiment 12, considered from the difference between the crystallinity of TFT characteristic.

TFT (after this being called PG6) is through combining laser beam and in crystallization process, using the thermal crystallisation manufactured of the nickel with catalytic action according to embodiment 11.Figure 25 representes the dependence of drain current-grid voltage characteristic curve (ID-VG) of TFT (PG6) to channel length.On the other hand, (after this be called (LG6) only makes with the laser beam irradiation according to embodiment 10 TFT.Figure 26 representes the dependence of drain current-grid voltage characteristic curve (ID-VG) of TFT (LG6) to channel length.Channel length is 1.5 μ m (A) and 2.0 μ m (B) and 3.0 μ m (C).Should note all using in any case in the present embodiment n-channel TFT.

In Figure 25 and Figure 26, the thickness of the semiconductor film of sample is 66nm, can operate under the depletion type fully with this thickness.Through two figure relatively clearly, little during in channel length to 2 μ m, find marked difference closing the district.Promptly in TFT LG6, observe drain current and go up the jumping phenomenon unusually.Be proved this phenomenon and depend on channel doping dosage.Under any circumstance, prove along with channel length shortens, with regard to the withstand voltage between source electrode and drain electrode, PG6 becomes and is better than LG6.

In complete depletion type, in source electrode and drain electrode withstand voltage, find significant difference with little semiconductor thickness.Measure to understand in part depletion type, whether having similar trend with 150nm semiconductor thickness.In Figure 27 and 28, the ID-VG characteristic curve is shown.On OFF state district drain current unusual, jumping influenced by drain voltage.When the source voltage increase, unusual the going up of drain current jumped significantly.Yet,, prove that PG6 is better with regard to the withstand voltage between source electrode and drain electrode even consider and should influence.And in the part depletion type, the withstand voltage of PG6 between source electrode and drain electrode is high certainly.

The said structure suggestion is to minimize under the situation of submicron order in the TFT component size, uses PG6 suitable.

Embodiment 13

Through use the present invention can form various semiconductor devices (active matrix liquid crystal display device, active matrix light emitting device or, active array type EC display device).Especially, the present invention can be applicable to the electronic installation of any kind, wherein comprises such electric-optical appliance in the display part.

Such electronic installation is video camera, digital camera, projecting apparatus, head-mounted display (goggles formula display), car navigation system, automobile audio, personal computer, personal digital assistant device (like mobile computer, mobile phone or e-book etc.); Figure 14 A～14F, 15A～15D and 16A～16C have shown one of example.

Figure 14 A shows personal computer, and it comprises, and main body 3001, image input section divide 3002, display part 3003, keyboard 3004 etc.Personal computer of the present invention can be through 3003 accomplishing the semiconductor device application of manufacturing of the present invention in the display part.

Figure 14 B shows video camera, and it comprises main body 3101, display part 3102, sound importation 3103, console switch 3104, battery 3105 and image receiving unit 3106 etc.Video camera of the present invention can be through 3102 accomplishing the semiconductor device application of manufacturing of the present invention in the display part.

Figure 14 C shows mobile computer, and it comprises main body 3201, camera part 3202, visual receiving unit 3202, console switch 3204, display part 3205 etc.Mobile computer of the present invention can be through 3205 accomplishing the semiconductor device application of manufacturing of the present invention in the display part.

Figure 14 D shows goggles formula display, and it comprises main body 3301, display part 3302, handel part 3303 etc.Goggles formula display of the present invention can be through 3302 accomplishing the semiconductor device application of manufacturing of the present invention in the display part.

Figure 14 E has shown the player of the recording medium (after this claiming recording medium) that adopts logging program on it, and player comprises main body 3401, display part 3402, speaker portion 3403, recording medium 3404, console switch 3405 etc.This player uses DVD (digital versatile disk [Sony]), CD etc. as recording medium, and can make user's music appreciating, film, plays games and surf the Net.Recording medium of the present invention can be through 3402 accomplishing the semiconductor device application of manufacturing of the present invention in the display part.

Figure 14 F has shown digital camera, and it comprises main body 3501, display part 3502, eyepiece part 3503, console switch 3504, visual receiving unit (not shown) etc.Digital camera of the present invention can be through 3502 accomplishing the semiconductor device application of manufacturing of the present invention in the display part.

Figure 15 A demonstrates just throwing type projecting apparatus, and it comprises projection device 3601 and screen 3602 etc.Just throwing type projecting apparatus can be accomplished with other drive circuit through using as the liquid crystal display device 3808 of projection device 3601 parts.

Figure 15 B demonstrates the rear projection type projecting apparatus, and it comprises main body 3701, projection device 3702, level crossing 3703, screen 3704 etc.The rear projection type projecting apparatus can be accomplished with other drive circuit through using as the liquid crystal display device 3808 of projection device 3702 parts.

Figure 15 C demonstrates the instance of each self-structure of the projection device 3601 that is shown in Figure 15 A and 15B respectively and 3702.

Projection device

3601 and 3702 by light source optical system 3803,

level crossing

3802 and 3804 to 3806, dichroism level crossing 3803, prism 3807, LCD 3808, differ plane 3809 and projection optical system 3810 and constitute.Projection optical system 3810 is by being made up of the optical system that comprises projecting lens.Present embodiment is one three a plane instance, but is not limited to this instance, also can be the monoplane type.In addition, perhaps those people that the present invention is specialized possibly route shown by arrows dispose an optical system such as optical lens, the film with polarization, the film that is used to regulate differ, IR film etc. in Figure 15 C.

Figure 15 D is the embodiment view of the structure of the light source optical system 3801 of expression shown in Figure 15 C.In the present embodiment, light source optical system 3801 is made up of reflector 3811, light source 3812, set of

lenses

3813 and 3814, polarization conversion device 3815 and focus lamp 3816.By way of parenthesis, the light source optical system that is shown in Figure 15 D is an embodiment, and the present invention be not particularly limited to shown in structure.For example, those people that the present invention is specialized possibly suitably dispose a optical system such as optical lens, have polarization film, be used to regulate the film that differs, IR film etc.

The projecting apparatus that is shown in Figure 15 A～15D is to use the projector type of transparent type electric-optical appliance, but the embodiment that wherein the present invention is applied to reflection-type electric-optical appliance and luminescent device is not shown.

Figure 16 A shows mobile phone, and it comprises main body 3901, voice output part 3902, sound importation 3903, display part 3904, console switch 3905, antenna 3906 etc.Mobile phone of the present invention can be through 3904 accomplishing the semiconductor device application of manufacturing of the present invention in the display part.

Figure 16 B shows mobile books (mobile book) (e-book), and it comprises main body 4001,

display part

4002 and 4003, storage medium 4004, console switch 4005, antenna 4006 etc.Mobile books of the present invention can be through 4002 and 4003 accomplishing the semiconductor device application of manufacturing of the present invention in the display part.

Figure 16 C illustrates display, and it comprises main body 4101, supporting seat 4102, display part 4103 etc.Display of the present invention can be through 4103 accomplishing the semiconductor device application of manufacturing of the present invention in the display part.The present invention has superiority to large screen display especially, and the display with 10 inches or above (especially 30 inches or more than) Diagonal Dimension is had superiority.

Aforementioned description clearly, range of application of the present invention is quite wide, and the present invention can be applicable to the electronic installation of any kind.According to electronic installation of the present invention can through use by embodiment 1～6 and 8～11 or embodiment 1～5 and 7～11 in the structure that constitutes of any several combinations realize.

Embodiment 14.

In the present embodiment, below will describe an embodiment, and wherein use convex lens used in diffraction light (diffraction grating) alternate embodiment 1 to form linear beam with reference to Figure 24.

In Figure 24, laser instrument 401, level crossing 402, diffraction optical device 403, linear beam 406, non-irradiated body 104 and glass substrate 105 are described.In addition, reference number 107,108 and 109 expression substrate moving directions.When laser instrument 401 emitted laser bundles go into to inject diffraction optical device 403 through level crossing 402, can formed linear laser beam 406 according to surface or its peripheral region.The shape of linear laser beam can be through suitably design diffraction optical device formation.In addition, shone the surface, can prevent to disturb if linear beam tilts to inject.

Should note between laser instrument 401 and level crossing 402, or place optical beam expander between level crossing 402 and the diffraction optical device 403, the direction in length and breadth of laser beam can be expanded respectively hope size.In addition, level crossing can be do not put and maybe a plurality of level crossings can be placed.

Then, when the irradiation of the linear beam of formation like this, it can be through moving with respect to irradiated body, for example moves the institute's desired area or the whole surface of irradiation irradiated body 104 in direction shown in the reference number 107 or reference number 108, direction shown in 109.

Because in the present invention, the optical system that forms linear beam has very simple structure, is easy to produced a plurality of identical shaped linear laser beams that have according to the surface.Therefore, owing to carry out identical annealing in process in any zone of any linear beam irradiation, the whole surface of irradiated body reaches and has uniform physical property, and productivity ratio improves.

Should note in embodiment 2～4,, use diffraction optical device and non-lenticular as at present embodiment.

Should note present embodiment optical system can with embodiment 5～7 independent assortments.

The structure of the application of the invention can obtain basic meaning as follows:

(a) because it is a very simple structure, so the easy and device dimensions shrink of light adjusting, similarly, under the situation of using a plurality of laser instruments of the same race or a plurality of not laser instruments of the same race, light is regulated easily and device size diminishes.

(b) because with respect to a plurality of laser instrument oblique incidences, Returning beam can be prevented from, and makes structure simpler.

(c) even using a plurality of laser beams to carry out under the situation of laser radiation, because optical system is simplified, it is identical shaped all laser beams to be had.Therefore can carry out homo genizing annelaing to illuminated object handles.This is particularly effective under the big situation of chip area.

(d) it has simplified the synthetic of a plurality of laser beams greatly.Therefore, even the laser instrument of low output also can use completely through using a plurality of this laser instruments.

(e) can increase production capacity.

(f) except that having above-mentioned advantage, can be implemented in active array type crystal display device is to realize the operating characteristics of semiconductor devices and the enhancing of reliability in the semiconductor devices of representative.In addition, can realize the reduction of semiconductor device manufacturing cost.

Claims

1. laser irradiation device comprises:

Laser instrument; With

Convex lens,

It is characterized in that

Incide obliquely on the convex lens from laser instrument emitted laser bundle,

The semiconductor film that laser beam shines on substrate to be provided through convex lens,

The shape of laser beam makes the shape of laser beam on the illuminated surface of semiconductor film, be linear shape through convex lens distortion, and wherein said linear shape refers to that to have length-width ratio be 2 or greater than 2 rectangle,

Place like this on illuminated surface, makes the laser beam that passes through said convex lens propagation with respect to said illuminated surface tilt incident, and

The minor face or the length on long limit that are included in the incidence surface of the said laser beam that incides semiconductor film are w, and said substrate thickness is d, and the incidence angle θ of the said laser beam of said laser beam incident to the semiconductor film satisfies following expression formula:

θ≥arctan(w/(2×d))。

2. laser irradiation device comprises:

Laser instrument; With

Diffraction optical device,

It is characterized in that

The semiconductor film that shines on substrate to be provided through diffraction optical device from laser instrument emitted laser bundle,

Use diffraction optical device to make the warpage of laser beam, make the shape of laser beam on the illuminated surface of semiconductor film, be linear shape, wherein said linear shape refers to that to have length-width ratio be 2 or greater than 2 rectangle,

Diffraction optical device is placed like this, makes the laser beam that passes through said diffraction optical device propagation with respect to said illuminated surface tilt incident, and

θ≥arctan(w/(2×d))。

3. according to the device of claim 1 or 2, wherein said laser instrument is solid-state laser, gas laser or the metal laser device of continuous oscillation or impulse hunting.

4. according to the device of claim 1 or 2, wherein said laser instrument is selected from YAG laser instrument, the YVO of continuous oscillation or impulse hunting ₄Laser instrument, YLF Lasers device, YAlO ₃Laser instrument, amorphous laser, ruby laser, alaxadrite laser, Ti: sapphire laser one of them.

5. according to the device of claim 1 or 2, wherein said laser instrument is selected from Ar laser instrument, Kr laser instrument and CO ₂Laser instrument one of them.

6. according to the device of claim 1 or 2, wherein said laser instrument be selected from continuous oscillation or impulse hunting He-Cd laser device, copper-vapor laser and golden vapor laser one of them.

7. according to the device of claim 1 or 2, wherein utilize the nonlinear optical element that is included in the said laser instrument to convert the said laser beam of said laser instrument emission to higher hamonic wave.

8. according to the device of claim 1, wherein convex lens are non-spherical lenses.

9. laser irradiating method comprises:

From laser instrument emission laser beam;

It is characterized in that

Make laser beam incide convex lens obliquely,

Make the warpage of laser beam through convex lens, make the shape of laser beam on the illuminated surface that is provided on the substrate, be linear shape, wherein said linear shape refers to that to have length-width ratio be 2 or greater than 2 rectangle, and

Through convex lens laser beam is shone on the illuminated surface, the said laser beam and the said illuminated surface of said linear shape relatively move simultaneously, and

The minor face or the length on long limit that are included in the incidence surface of the said laser beam that incides illuminated surface are w, and said substrate thickness is d, and said laser beam incident satisfies following expression formula to the incidence angle θ of illuminated lip-deep said laser beam:

θ≥arctan(w/(2×d))。

10. laser irradiating method comprises:

From laser instrument emission laser beam;

It is characterized in that

Use diffraction optical device to make the warpage of laser beam, make the shape of laser beam on the illuminated surface that is provided on the substrate, be linear shape, wherein said linear shape refers to that to have length-width ratio be 2 or greater than 2 rectangle,

Said laser beam with respect to said diffraction optical device incident is provided with like this, makes said laser beam with respect to said illuminated surface tilt incident,

Through diffraction optical device laser beam is shone on the illuminated surface, the said laser beam and the said illuminated surface of said linear shape relatively move simultaneously, and

θ≥arctan(w/(2×d))。

11. according to the method for claim 9 or 10, wherein said laser beam is generated by the vibration of solid-state laser, gas laser or the metal laser device of continuous oscillation or impulse hunting.

12. according to the method for claim 9 or 10, wherein said laser beam is by the YAG laser instrument, the YVO that are selected from continuous oscillation or impulse hunting ₄Laser instrument, YLF Lasers device, YAlO ₃Laser instrument, amorphous laser, ruby laser, alaxadrite laser, Ti: one of them the vibration of laser instrument of sapphire laser generates.

13. according to the method for claim 9 or 10, wherein said laser beam is by being selected from Ar laser instrument, Kr laser instrument and CO ₂One of them the vibration of laser instrument of laser instrument generates.

14. according to the method for claim 9 or 10, wherein said laser beam is generated by one of them the vibration of laser instrument of the He-Cd laser device that is selected from continuous oscillation or impulse hunting, copper-vapor laser and golden vapor laser.

15. according to the method for claim 9 or 10, the said laser beam of wherein through the nonlinear optical element that is included in the said laser instrument said laser instrument being launched converts higher hamonic wave to.

16. according to the method for claim 9 or 10, surface that wherein said illuminated surface is a semiconductor film and semiconductor film are by the laser beam crystallization.

17. according to the method for claim 9 or 10,

Wherein said illuminated surface is the surface of semiconductor film,

Wherein said method also comprises adds impurity element to said semiconductor film, and

Wherein laser beam activates said impurity element.

18. according to the method for claim 9 or 10,

Wherein said illuminated surface is the surface of semiconductor film, and

Wherein semiconductor film is the film that comprises silicon.