CN1956491B - Method for driving semiconductor device, method and apparatus for driving load, and electronic apparatus - Google Patents
Method for driving semiconductor device, method and apparatus for driving load, and electronic apparatus Download PDFInfo
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- CN1956491B CN1956491B CN 200610164121 CN200610164121A CN1956491B CN 1956491 B CN1956491 B CN 1956491B CN 200610164121 CN200610164121 CN 200610164121 CN 200610164121 A CN200610164121 A CN 200610164121A CN 1956491 B CN1956491 B CN 1956491B
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Abstract
The invention provides a method for driving a semiconductor device, a method and an apparatus for driving a load, and an electronic apparatus. When a signal is read from a CCD solid-state image pickup element, the CCD solid-state image pickup element is driven with at least two driving voltages so that high-speed reading is performed with generation of noise due to interference between the driving voltages reduced. The CCD solid-state image includes a charge storage section between a vertical transfer register and a horizontal transfer register. By performing the transfer of charge in the direction of columns during an effective transfer period of the transfer in the direction of rows, signal charge of one row generated by a light receiving sensor is transferred to the charge storage section, and by performing the transfer outside the effective transfer period in the transfer in the direction of the row, the signal charge of onerow transferred to the charge storage section is transferred to the horizontal transfer register.
Description
Technical field
The present invention relates to be used for driving the method and apparatus of semiconductor device, implement the electronic equipment of this driving method and device with the capacitive load as the drive electrode of two-dimensional matrix charge coupled device (CCD) solid-state image pickup device.More particularly, the present invention relates to the image pick-up device of realizing high-speed frame frequency that reads in the process at signal.In addition, the driving method and the drive unit that the present invention relates to be used to drive load or have the load of induction reactance, and the electronic equipment of implementing this driving method and device with condensance.More particularly, the present invention relates to a kind of mechanism, be used to reduce various variations and environmental change, make the load output signal gentleness change when carrying out pulsed drive with predetermined instantaneous velocity with box lunch.
Background technology
The cross reference of related application
The present invention comprises Japanese patent application JP2005-286061 that submitted on September 30th, 2005 and the relevant theme of submitting on February 15th, 2006 of Japanese patent application JP2006-038448, and its full content is incorporated herein by reference.
High-speed image is caught and on the video camera that comprises the CCD solid-state image pickup device, slowly reset then and no matter the needs of television system constantly increase.The user is concerned about is when pixel number increases, take pictures the continuously decline of speed of the digital stillcamera that comprises the CCD solid-state image pickup device.Therefore the needs to the high speed image pickup device increase.
Electronic circuit and electronic equipment adopt various mechanism to have impedor load with the pulse signal driving.
For example, being widely used has the image pick-up device of two-dimensional matrix CCD solid-state image pickup device, and wherein each image pick-up element comprises the transfer electrode as condensance.Also used the motor that has as the winding coil of induction reactance.
The impedance component as load as condensance or induction reactance is driven by pulse signal usually.The phase place of driving pulse and transient response receive the influence of the relation between load and the driving element, more particularly, receive the change of load variations, element function and the influence of environmental change.The result is that load can not be driven rightly.When low velocity drove, the influence that phase place and transient response change possibly be unessential, but when high-speed the driving, a spot of variation will cause big performance change.
For example, when the pulse signal that moves slightly each other on by phase place when a plurality of loads drives, can not realize correct driving.When two loads during by the drive of anti-phase, slight differing will cause incorrect driving between the drive signal.
Instantiation is described below.High-speed image is caught and on the video camera that comprises the CCD solid-state image pickup device, slowly reset then and no matter the needs of television system constantly increase.The user is concerned about is when pixel number increases, take pictures the continuously decline of speed of the digital stillcamera that comprises the CCD solid-state image pickup device.So need increase to the high speed image pickup device.
Figure 22 A and 22B show the structure of known image pick-up device.Figure 22 A shows and realizes shifting between line (interline transfer, IT) major part of the known image pick device of the employing CCD solid-state image pickup device of system.Figure 22 B shows the driving method of CCD solid-state image pickup device.
This known image pick-up device 3 comprises CCD solid-state image pickup device 30, and the drive circuit 4 that is used for driven CCD solid-state image pickup device 30.
CCD solid-state image pickup device 30 comprises the two-dimensional matrix (determinant) as a plurality of optical receiving sensors 31 of pixel; And image pick-up section (light receiver) 30a with vertical transitions register 33, this vertical transitions register 33 has a plurality of CCD structures corresponding with optical receiving sensor 31.Each horizontal transfer register 34 that all has the CCD structure and be connected to the afterbody of each vertical transitions register 33 is arranged on the outside of image pick-up section (light receiver) 30a, and efferent 36 is connected to horizontal transfer register 34.
Four kinds of horizontal-extending vertical transfer electrodes 32 (its end is marked with suffix numeral _ 1, _ 2, _ 3 and _ 4) so that opening is arranged on the mode on the optical receiving surface of optical receiving sensor 31, in vertical direction with predetermined order setting.Vertical transfer electrode 32 is arranged on row (vertically) the upwardly extending vertical transitions registers 33 in side (optical receiving surface), and so whenever listing the vertical transitions register 33 that is positioned at same vertical position becomes one group.
Four kinds of vertical transfer electrodes 32 are installed like this, promptly make two vertical transfer electrodes 32 corresponding to single optical receiving sensor 31.Vertical transfer electrode 32 is driven into, utilizes four kinds of vertical transitions pulse Φ V_1, Φ V_2, Φ V_3 and Φ V_4 providing from drive circuit 4 transfer charge in vertical direction.Per two optical receiving sensors 31 (except its afterbody of horizontal transfer register 34 those sides) are paired into one group.Therefore to four vertical transfer electrodes 32 vertical transitions pulse Φ is provided respectively V_1, Φ V_2, Φ V_3 and Φ V_4 by drive circuit 4.
As shown in the figure, in horizontal transfer register 34 those sides, be that four vertical transitions registers 33 of one group are provided with vertical transfer electrode 32.Uppermost vertical transitions register 33 is corresponding to the vertical transfer electrode 32_1 that supplies to have vertical transitions pulse Φ V_1 in this group.Previous stage vertical transfer electrode 32_2 (more being close to horizontal transfer register 34) is provided vertical transitions pulse Φ V_2.Previous stage vertical transfer electrode 32_3 (more near horizontal transfer register 34) is provided vertical transitions pulse Φ V_3.Vertical transfer electrode 32_4 near horizontal transfer register 34 is provided vertical transitions pulse Φ V_4.
Vertical transitions register 33 is through one group of vertical transfer electrode 32 of afterbody, and promptly 32_1 is connected to horizontal transfer register 34 to 32_4 (being provided Φ V_1 to Φ V_4).
For horizontal transfer register 34, for single vertical transitions register 33 is provided with two horizontal transfer electrodes 35 (its end is marked with suffix _ 1 and _ 2).Horizontal transfer electrode 35 is provided to from two phase place horizontal drive pulse Φ H_1 that drive circuit 4 and Φ H_2, thus the horizontal transfer signal charge.
In the CCD solid-state image pickup device 30 that constitutes thus, the light that optical receiving sensor 31 opto-electronic conversion are received, and the amount of the light that received of response is come the storage signal electric charge.In the vertical blanking cycle, the signal charge of optical receiving sensor 31 is read in the vertical transitions register 33.Article one, each horizontal blanking cycle of horizontal signal charge is all by vertical transitions.The result is to carry out so-called vertical line displacement (vertical line shift), thereby signal charge is transferred in the horizontal transfer register 34.Transfer to signal charge in the horizontal transfer register 34 in the level of significance migration period by horizontal transfer, and output to the outside through efferent 36 then.
The vertical line of signal charge displacement is designed to during TV horizontal blanking cycle H b, carry out in response to vertical transitions pulse (Φ V_1 is to Φ V_4) in the known CCD solid-state image pickup device 30, shown in the driving sequential that the vertical line of Figure 25 B is shifted.More particularly; Shown in Figure 25 B; In the vertical line displacement of signal charge; In horizontal blanking cycle H b, be displaced to horizontal transfer register 34 in response to four vertical transitions pulse Φ V_1, Φ V_2, Φ V_3 and Φ V_4 corresponding to the signal charge that rests on vertical transfer electrode 32_2 and the 32_3 of Φ V_2 and Φ V_3.More particularly, on the trailing edge of the vertical drive pulse Φ of vertical transfer electrode 32_4 V_4, signal charge is transferred to the horizontal transfer electrode 35_1 that is provided horizontal drive pulse Φ H_1 of horizontal transfer register 34.
In the vertical line displacement; In horizontal blanking cycle H b; (Δ V representes voltage to the rising edge of vertical transitions pulse Φ V_1, Φ V_2, Φ V_3 and the Φ V_4 of 32_4 and the gradient delta V/ Δ T of trailing edge to be applied to vertical transfer electrode 32_1 respectively; Δ T express time), promptly instantaneous velocity (Δ V/ Δ T) equals in the vertical blanking cycle, to be applied to respectively the instantaneous velocity (Δ V/ Δ T) of vertical transfer electrode 32_1 to vertical transitions pulse Φ V_1, Φ V_2, Φ V_3 and the Φ V_4 of 32_4.It is the rectangular pulse with vertical lifting edge and vertical trailing edge that Figure 25 B illustrates driving pulse.
In the image pick-up device of the video camera that for example adopts the CCD solid-state image pickup device; Perhaps be applied to shift between the main feed line of broadcasting business in the CCD solid-state image pickup device of (FIT) system; When the electronic image stable operation, during the vertical blanking cycle, need the high speed vertical transitions.
The open No.2000-138943 of Japanese Unexamined Patent Application has proposed a kind of technology, and wherein the CCD solid-state image pickup device uses four kinds of vertical transitions pulses to carry out the vertical line displacement during the horizontal blanking cycle.
In CCD solid-state image pickup device 30, vertical line displacement and high speed vertical transitions are by the vertical drive scanning circuit of identical characteristics, that is, the vertical driver in the drive circuit 4 drives.Typically adopt its characteristic to be CMOS complementary metal-oxide-semiconductor (CMOS) type vertical driver at a high speed.If carry out vertical transitions in the scan period, so owing to the caused noise (coupled noise) of crosstalking in the CCD solid-state image pickup device 30 will take place when applying vertical transitions pulse (Φ V_1 is to Φ V_4) at level of significance.
More particularly; Crosstalk noise causes on ccd output signal; Occur as vertically-striped noise (streak noise); This is because the instantaneous velocity of the rising edge of drive waveforms and falling edge is high, that is, the gradient (Δ V/ Δ T) of the rising edge of vertical transitions pulse (Φ V_1 is to Φ V_4) and trailing edge is big when in horizontal scanning period, carrying out vertical transitions.In other words, in response to the high instantaneous velocity in the drive waveforms, picture quality has reduced (noise is arranged).To combine embodiments of the invention and carry out about the further discussion of this problem.The transient change that a reason of image degradation is a driving voltage on the electrode is disturbed the driving voltage on another electrode.
In order to prevent image degradation, vertical drive (vertical transitions) is carried out in the outside in the level of significance scan period in the prior art.More particularly, apply vertical transitions pulse (Φ V_1 is to Φ V_4), when carrying out the vertical line displacement, can not go wrong in the image so if in the horizontal blanking cycle, carry out.In known CCD solid-state image pickup device, in the horizontal blanking cycle, carry out the vertical transitions that is used for the vertical line displacement.
When TV method when being typical, the horizontal blanking cycle is limited this TV method, and if in the horizontal blanking cycle, to carry out the vertical line displacement just enough.Yet, if combined the design of many pixels with the design of high frame frequency and no matter during the TV method, the horizontal blanking cycle that is used for the vertical line displacement will become invalid, and promote high frame frequency to encounter difficulties when designing.
In order to combine high frame frequency design, need to shorten the horizontal blanking cycle.For this reason, need carry out the vertical line displacement at a high speed.In order to carry out the vertical line displacement at a high speed, need transfer electrode to have low resistance.As realizing low-resistance a kind of mode, expected widening electrode area.It is difficult widening transfer electrode in the horizontal direction.Need to increase the thickness of transfer electrode.If the thickness of transfer electrode increases too many, the shoulder height around the gauge hole will become excessive so.When rayed is come in, blocked the light that tilts to get into, make sensitivity descend, and produce shade.Therefore be difficult to increase vertical transitions speed.
Even in order in the electronic equipment that for example adopts not with the digital stillcamera of the compatible CCD solid-state image pickup device of TV method, to realize high frame frequency, increase the output rating of signal, the horizontal blanking cycle is also with elongated.Therefore be difficult to output rating is increased on the predetermined value.
The open No.2005-269060 of Japanese Unexamined Patent Application that transfers common assignee of the present invention discloses a kind of through shortening the mechanism that the horizontal blanking cycle realizes high frame frequency greatly.
In disclosed mechanism; (Δ V representes voltage to instantaneous velocity Δ V/ Δ T as rising edge and trailing edge; Δ T express time) drive clock waveform, that is, the level and smooth and pulse signal that relax of gradient offers the transfer electrode as condensance as shifting pulse.In high density CCD, the vertical transitions of carrying out in the cycle at effective pixel causes frame frequency high, and clock frequency is low.For this reason, need the pulse signal that gradient is level and smooth and mitigation is tilted.
Summary of the invention
Therefore, be desirable to provide a kind of mechanism, it allows to read at a high speed the signal with the noise that produces owing to the interference between the controlled driving voltage when driving the capacitive load of CCD solid-state image pickup device for example through at least two driving voltages.
As disclosed among the open No.2005-269060 of Japanese Unexamined Patent Application; Expect with the constant current driven capacitive load, keep the gradient of driving pulse constant as much as possible when driving capacitive load with the pulse signal (be potential pulse this moment) that box lunch is level and smooth with gradient and mitigation is tilted.Yet if only use constant current driven, constant current driven will receive variation and the variation in the drive unit manufacture process and the influence of environmental change in the load capacitance manufacture process, and can not carry out appropriate driving.If, can not carry out appropriate driving so owing to phase relation has been moved in the variation in variation in the load capacitance manufacturing and the drive unit manufacture process.This problem is also further described in the discussion of embodiment of the present invention in the back.
If use the inductive reactance opposite with condensance, this problem also possibly exist.For using the pulse signal that gradient is level and smooth and mitigation is tilted (being current impulse this moment) to keep the gradient of driving pulse constant as far as possible when driving inductive load, expected that the use constant voltage drives inductive load.Yet if only use constant voltage to drive, constant voltage drives variation, the variation in the drive unit manufacture process and the influence of environmental change that will receive in the load capacitance manufacturing, and can not carry out correct driving.If, can not carry out correct driving owing to phase relation has been moved in the variation in variation in the load inductance manufacture process and the drive unit manufacture process.
Therefore be desirable to provide a kind of mechanism, when it has the pulsed drive load of soft transient response in use, can reduce because the driveability that operation changes and environmental change caused descends.
In one embodiment of the invention; Semiconductor device comprises and is used to respond the charge generation portion that is arranged in matrix that the input electromagnetic wave produces signal charge; Be used for shifting continuously in one direction the first electric charge transfer portion of the signal charge that produces by charge generation portion; Be used on the other direction different, shifting the second electric charge transfer portion of the signal charge that shifts by the first electric charge transfer portion continuously, and be arranged on the charge storage portion between the first electric charge transfer portion and the second electric charge transfer portion with this direction.
Here, " direction " and " another direction " against each other.Generally speaking, a direction is corresponding to column direction that is used for low-velocity scanning or vertical direction, and another direction is corresponding to line direction that is used for high-velocity scanning or horizontal direction.For example, turn 90 degrees if screen revolves, so up and down and about relation change, and ranks or vertical-horizontal relation also change.This relation is not absolute.For example, if the first electric charge metastasis site on column direction, so the second electric charge metastasis site on line direction, and if the second electric charge metastasis site on column direction, the first electric charge metastasis site is on line direction so.Hereinafter, a direction is represented column direction or vertical direction, and another direction is represented line direction or horizontal direction.
Through driving the transfer on the column direction in the effective migration period on line direction; The signal charge of the scheduled unit (typically being delegation) on the line direction of charge generation portion generation is transferred to charge storage portion; Through drive signal electric charge beyond effective migration period of line direction, the signal charge that will transfer on the line direction in the charge storage portion of scheduled unit (typically being delegation) is transferred to the second electric charge transfer portion.
In one embodiment of the invention, realize the driving on the line direction in effective migration period with the drive signal of every group of drive signal alternative inversion, every group of drive signal is per at least two drive signals.Because two drive signal anti-phases, therefore the same anti-phase of noise contribution from drive signal produces cancels each other out.
In one embodiment of the invention, effectively the driving on the line direction in the migration period make with semiconductor substrate on the noise compensation signal of noise anti-phase offer the precalculated position on the semiconductor substrate.Therefore confirm to provide the correction signal of anti-phase, thereby reduce because the substrate noise that drive signal produces.
In one embodiment of the invention, drive signal is offered semiconductor substrate through the noise control circuit.The noise control circuit of the noise on the controlling and driving holding wire is arranged in the drive signal line between drive circuit and the semiconductor device.
In one embodiment of the invention, the capacitive function element is provided, thereby makes the earth resistance of semiconductor substrate be capacitive.As hereinafter will be specifically described, we find that the noise source of substrate noise is a substrate resistance.Drive current in response to drive signal flows through the substrate impedance.Through making drive current flow through the capacitive function element, can reduce substrate noise.
In one embodiment of the invention, the waveform shaping processor is carried out predetermined waveform processing to the input pulse signal, thereby drives load with input pulse.Pulse output signals in the load of drive pulse waveform shaping monitoring control devices, the regulated value of control waveform shaping processor, the transient response of the pulse output signals of feasible for example retardation and variation characteristic becomes predetermined properties.
Pulse output signals to initiatively producing in the load is carried out FEEDBACK CONTROL, makes pulse output signals have predetermined transient response.
According to embodiments of the invention, in the charge transfer process on column direction, use the drive signal of anti-phase.The noise compensation signal that phase place and substrate noise are opposite offers substrate.Drive signal provides through the noise control circuit.Make the substrate earth resistance be capacitive.Therefore reduced the crosstalk noise that produces in the charge transfer process on the column direction.
The combination of the foregoing description has reduced the crosstalk noise in the charge transfer process more.
Owing to monitored initiatively (active) pulse output signals,, made pulse output signals have predetermined transient response so can realize FEEDBACK CONTROL.Therefore, even semiconductor stands to change from the load characteristic that loads to load, element also can obtain constant transient response during to the drive characteristic variation of element and environmental change.
Owing to variation and the environmental change in the manufacture process of variation in the manufacture process that has load capacitance and drive unit, so this load is driven by the mitigation transient response with appropriate continuously phase delay and the pulse signal of gradient characteristic.
Description of drawings
Fig. 1 is the block diagram as the image pick-up device of an instance of electronic installation according to an embodiment of the invention;
Fig. 2 shows the layout instance of four kinds of vertical transfer electrodes of the CCD solid-state image pickup device of Fig. 1;
Fig. 3 A-3C shows the vertical transfer electrode of the CCD solid-state image pickup device of Fig. 1, the placement model of semiconductor substrate SUB and output amplifier;
Fig. 4 A-4C shows the equivalent electric circuit of vertical driver and the relation between the CCD solid-state image pickup device;
Fig. 5 A1-5B2 shows the step response of vertical transitions pulse Φ V;
Fig. 6 A and 6B are the sequential charts that illustrates according to the driving sequential of the CCD solid-state image pickup device of Fig. 1 of first embodiment of the invention;
Fig. 7 A and 7B are the sequential charts that illustrates according to the driving sequential of the CCD solid-state image pickup device that does not drive with the complementary drive method of first embodiment of the invention;
Fig. 8 A-8C illustrates the equivalent electric circuit of vertical driver and the relation between the CCD solid-state image pickup device;
Fig. 9 A and 9B show the principle that vertical driver reduces instantaneous velocity;
Figure 10 illustrates other advantage that complementary drive has;
Figure 11 illustrates first sequential chart that drives sequential;
Figure 12 illustrates second sequential chart that another drives sequential;
Figure 13 is the 3rd sequential chart that another driving sequential is shown;
Figure 14 illustrates the 4th sequential chart of a driving sequential again;
Figure 15 is the 5th sequential chart that another driving sequential is shown;
Figure 16 is the 6th sequential chart that another driving sequential is shown;
Figure 17 illustrates the 7th sequential chart of a driving sequential again;
Figure 18 is the 8th sequential chart that another driving sequential is shown;
Figure 19 illustrates the noise control method according to second embodiment of the invention;
Figure 20 A-20E illustrates the noise control method according to third embodiment of the invention;
Figure 21 A and 21B illustrate the noise control method according to fourth embodiment of the invention;
Figure 22 A and 22B illustrate the structure of known image pick-up device;
Figure 23 totally illustrates the pulse driver with the FEEDBACK CONTROL shaping feature that is used for drive pulse waveform;
Figure 24 A and 24B are the sequential charts that the pulse driver work of Figure 23 is shown;
Figure 25 A and 25B are the sequential charts of the gradient characteristic in the work that the pulse driver of Figure 23 is shown, the especially instantaneous process;
Figure 26 is shown specifically the pulse driver of the Figure 23 that drives the condensance load;
Figure 27 is the sequential chart of operation that the pulse driver of Figure 26 is shown;
Figure 28 is shown specifically the pulse driver of the Figure 23 that drives the inductive reactance load;
Figure 29 is the sequential chart of operation that the pulse driver of Figure 28 is shown;
Figure 30 is shown specifically phase delay adjustment device and the through-rate adjuster in the pulse driver of Figure 23;
Figure 31 is the sequential chart of operation of the pulse driver of Figure 30;
Figure 32 is shown specifically the phase delay adjustment device of Figure 23 and another instance of through-rate adjuster (distortion of the setting shown in Figure 17);
Figure 33 is shown specifically the drive pulse waveform shaping controller in the pulse driver of Figure 23;
Figure 34 A-34C is the sequential chart of operation that the pulse driver of Figure 33 is shown;
Figure 35 illustrates first kind of structure of the vertical driver of realizing pulse driver;
Figure 36 illustrates second kind of structure of the vertical driver of realizing pulse driver;
Figure 37 illustrates the third structure of the vertical driver of realizing pulse driver;
Figure 38 illustrates the 4th kind of structure of the vertical driver of realizing pulse driver; And
Figure 39 A and 39B illustrate the structure of known image pick-up device.
Embodiment
Below with reference to accompanying drawing embodiments of the invention are described.
With reference to accompanying drawing, image pick-up device 1 and 3 are shown, driving governor (drive circuit) 5, vertical transitions driver 7, horizontal transfer driver 8, CCD solid-state image pickup device 10 and 30; Image pick-up section 10a, optical receiving sensor 11, vertical transfer electrode 12, vertical transitions register 13, horizontal transfer register 14, output amplifier 16; Related dual-sampling circuit 17, the noise compensation signal provides circuit 200, memory gate electrode 21, negative circuit 210 keeps gate electrode 22; Waveform shaping circuit 220, capacitor 222, resistor 224 reads gate electrode 23, embedded groove 24; Gate insulator 25, image pick-up section 30a, optical receiving sensor 31, vertical driver 40 and 50, gauge hole 118; Light shielding layer 119, transistor 120, electrode 121, VSUB terminal 130, and PWELL earth terminal 131 and 132.What also illustrate is noise control circuit 310, capacitor 316, vertical transfer electrode 32, resistor 322, vertical transitions transistor 33, inductance 334; Horizontal transfer register 34, inductance 344, horizontal transfer electrode 35, efferent 36, drive circuit 4, capacitor 412; Vertical driver 50, inverter 51, level shift circuit 52 and 53, voltage efferent 54, impedance controller 55; Delay line 56 and 57, switch 58 and 59, CCD solid-state image pickup device 60 and 80, coupling capacitor C1, C2 and C3, resistor R o; Light shield resistor R 1, the equivalent resistance R10 of light shielding layer, protective resistor R12, substrate resistance device R2, and grounding resistor R61 and R81.That illustrate equally is the STG of storage grid portion, output impedance Zo, and impedance component Z58 reads gate portion ROG; Pulse driver 600, load 609, phase delay adjustment device 610; Pulse delay circuit 612, delayed clock counter register 614, through-rate adjuster 630; Electric current efferent 632, voltage efferent 633, and digital-to-analogue (D/A) transducer 634.What also illustrate is switch 636, DAC data register 638, load driver 650; Current mirror circuit 652, constant voltage output circuit 653, node (current summation point) 656; Voltage adder 657, load current detector 658, waveform shaping processor 660; Drive waveforms shaping controller 670, phase delay controller 672, and through-rate controller 674.What also illustrate is comparator 682 and 684, voltage comparator 682A and 684A, counter 682B and 684B, resolver 686, vertical driver 700; Switch 708, phase delay adjustment device 710, through-rate adjuster 730, distributing switch 740, load driver 750; Waveform shaping processor 760, drive pulse waveform shaping controller 770, phase delay controller 772, through-rate controller 774, operation control 790; Timing generator 810, AFE(analog front end) portion 820, video signal preprocessor 830, video calculates and processing unit 832; Video tape recorder 834, video display 836, switch 852,854 and 856, and selective signal generator 860.
The general structure of image pick-up device
Fig. 1 illustrates the conduct image pick-up device 1 of an instance of electronic equipment according to an embodiment of the invention.Image pick-up device 1 adopts the CCD solid-state image pickup device 10 that shifts (IT) system between line.
IT CCD solid-state image pickup device 10 comprises the two-dimensional matrix of a plurality of photocells (light receiver), a plurality of vertical transitions CCD between photronic vertical row (V register), and the horizontal transfer CCD that follows last column vertical transitions CCD.Describe image pick-up device 1 below in detail.
As shown in Figure 1, image pick-up device 1 of the present invention comprises that IT CCD solid-state image pickup device 10 and conduct drive the drive circuit 5 of the drive unit of IT CCD solid-state image pickup device 10.
CCD solid-state image pickup device 10 comprises image pick-up section 10a.Image pick-up section 10a comprises the two-dimensional matrix as the optical sensor (charge generation portion) 11 of pixel, and has the CCD structure and corresponding to optical sensor 11 vertically extending vertical transitions registers (instance of vertical transitions portion) 13.The light that optical sensor 11 will shine on it converts the signal charge corresponding with incident light quantity to and stores this electric charge.
Image pick-up section 10a also comprises laying respectively at and reads grid (ROG) 18 between vertical transitions register 13 and the optical sensor 11, and is positioned at the borderline raceway groove of each pixel (element cell) and blocks ST 19.
As an one of which characteristic, the CCD solid-state image pickup device 10 of present embodiment comprises the 10b of charge storage portion, and it is outside that the 10b of this charge storage portion is arranged on image pick-up section 10a, is used for the signal charge of interim storage from image pick-up section 10a vertical transitions.The horizontal transfer register 14 (instance of the second electric charge transfer portion) that will have the CCD structure is arranged to be connected to the 10b of charge storage portion.The main distinction between the CCD solid-state image pickup device 30 of CCD solid-state image pickup device 10 and Figure 22 is that CCD solid-state image pickup device 10 comprises the 10b of charge storage portion between image pick-up section 10a and horizontal transfer register 14.
Such just as image pick-up section 10a, the 10b of charge storage portion comprises the vertical transitions register 13 with CCD structure.Vertical transitions register 13 is arranged to dual structure.The part that comprises the image pick-up section 10a of part vertical transitions register 13 is called the STG of storage grid portion, and the part that comprises the horizontal transfer register 14 of part vertical transitions register 13 is called and keeps gate portion HLG.
The horizontal transfer register 14 that the delegation that extends to the right side from the left side of Fig. 1 has a CCD structure is connected to last column (that is, keeping gate portion HLG) of each vertical transitions register 13 of the 10b of charge storage portion.The output of horizontal transfer register 14 is connected to the output amplifier 16 that is used for signal charge is converted to the signal of telecommunication (being typically voltage signal) as electric charge detector (perhaps output unit), and the output of output amplifier 16 is connected to related two sampling (CDS) circuit 17.
Here CCD solid-state image pickup device 10 comprises CDS circuit 17.Replacedly, CDS circuit 17 can be arranged on outside the CCD solid-state image pickup device 10.
(end is marked with suffix _ 1 to four kinds of vertical transfer electrodes 12; _ 2; _ 3 and _ 4) be arranged on the vertical transitions register 13 (on the light-receiving side) on the position identical with predetermined order in vertical direction, so that form the hole (shown in Fig. 2 and 3A-3C) of the optical receiving surface of optical sensor 11 with vertical transitions register 13.Vertical transfer electrode 12 horizontal-extendings stride across image pick-up device 1, thereby this hole is formed on the light-receiving side of optical sensor 11.
Four kinds of vertical transfer electrodes 12 are provided with like this, make two vertical transfer electrodes 12 corresponding to single optical sensor 11.Four vertical transitions pulse Φ V_1, Φ V_2, Φ V_3 and Φ V_4 that provide from drive circuit 5 are the transfer signal electric charge in vertical direction.More particularly, per two optical sensors 11 are paired into one group (afterbody that comprises the 10b of charge storage portion), vertical transitions pulse Φ V_1, Φ V_2, Φ V_3 and Φ V_4 are provided for respectively four vertical transfer electrodes 12.
As shown in Figure 1, for every group of four vertical transitions registers 13 vertical transfer electrode 12 is set in vertical direction.The uppermost optical sensor 11 of vertical direction is corresponding to the vertical transfer electrode 12_1 that is provided with vertical transitions pulse Φ V_1.For vertical transitions pulse Φ being provided V_2 at the vertical transfer electrode 12_2 of previous stage (more near the 10b of charge storage portion).For at the vertical transfer electrode 12_3 of previous stage (more near the 10b of charge storage portion) vertical transitions pulse Φ being provided V_3 again.For near the vertical transfer electrode 12_4 of the 10b of charge storage portion vertical transitions pulse Φ being provided V_4.
Through last group vertical transfer electrode 12 (being provided with the transfer electrode of vertical transitions pulse Φ V_1 to Φ V_4), that is, 12_1 is connected to the 10b of charge storage portion vertical transitions register 13 subsequently to 12_4 with vertical transitions register 13.Comprising that memory gate electrode 21 and two kinds of transfer electrodes that keep gate electrode 22 are set in place in the vertical transitions register 13 common 10b of charge storage portion of same upright position goes up (on the same light receiving surface at image pick-up section 10a).Memory gate electrode 21 is arranged to level with maintenance gate electrode 22 and is striden across image pick-up device 1.
Memory gate electrode 21 and maintenance gate electrode 22 are arranged on the output of the vertical transfer electrode 12_4 (being provided with vertical transitions pulse Φ V_4) that forms on the vertical transitions register 13 as the output of image pick-up section 10a.Drive circuit 5 provides storage grid pulse Φ VSTC for memory gate electrode 21, keeps grid impulse Φ VHLG for keeping gate electrode 22 to provide.
For per two the horizontal transfer electrodes 15 (end is marked with suffix _ 1 and _ 2) that are used for each vertical transitions register 13 are provided with a horizontal transfer register 14.Horizontal transfer register 14 usefulness two phase place horizontal drive pulse Φ H_1 and Φ H_2 horizontal transfer signal charge.
The work general introduction of image pick-up device 1 as follows.When the pulse XSG (Φ ROG) that reads that sends from drive circuit 5 offers and reads grid ORG 18; When making grid potential high (deep), the signal charge that accumulates in each optical sensor 11 of CCD solid-state image pickup device 10 is read vertical transitions register 13 through reading grid ROG.Reading of signal charge from optical sensor 11 to vertical transitions register 13 is called a switching (field shift) specially.
The vertical transitions register 13 of image pick-up section 10a shifts driving by four vertical transitions pulse Φ V_1 corresponding to four vertical transfer electrodes 12 to Φ V_4.The STG of storage grid portion of the 10b of charge storage portion is driven by storage grid pulse Φ VSTG, keeps gate portion HLG by keeping grid impulse Φ VHLG to drive.Like this, the signal charge that reads from optical sensor 11 once uses a scan line to carry out vertical transitions, transfers to horizontal transfer register 14 then.
Unlike image pick-up section 10a, by the STG of storage grid portion and the 10b of charge storage portion that keeps gate portion HLG to form not the Considering Vertical pel spacing design.The electrode width of each can increase in storage grid 21 and the maintenance grid 22, so that introduce low resistance design in storage grid 21 in the grid 22 with keeping.This is quite favourable the high speed vertical electric charge from the 10b of charge storage portion to horizontal transfer register 14 shifts.
Like what will describe in detail at the back, vertical electric charge transfer (that is vertical line displacement) is different from the vertical line of carrying out usually in the part normal level blanking cycle and is shifted.Vertical line displacement among the image pick-up section 10a is carried out in the part in level of significance cycle, and the vertical line displacement among the 10b of charge storage portion is carried out in the part in horizontal blanking cycle.
Two phase place horizontal transfer pulse Φ H_1 and Φ H_2 that response is sent from drive circuit 5, horizontal transfer register 14 will be from the signal charge horizontal transfer of the delegation of a plurality of vertical transitions register 13 vertical transitions to output amplifier 16.
The layout structure of vertical transfer electrode
Fig. 2 shows instance of layout structure of four kinds of vertical transfer electrodes 12 of the CCD solid-state image pickup device 10 of Fig. 1.Wherein φ V1 is structurally identical with φ V3, φ V2 and φ V4.
As shown in Figure 2, a plurality of vertical transitions registers (V-CCD) 13 are arranged between the vertical line of two-dimensional matrix of optical sensor 11, will read gate portion ROG 18 and be inserted between optical sensor 11 and the vertical transitions register 13.Raceway groove blocks on the border that the CS of portion 19 is arranged on each pixel (element cell).
Four kinds of vertical transfer electrodes 12 being processed by horizontally extending polysilicon membrane are arranged on the optical receiving surface of vertical transitions register 13 (in the front side of diagram page), so that be that 13 in vertical transitions register on the same vertical position of every row is shared.Gauge hole 118 is stayed on the optical receiving surface of optical sensor 11.
The layout structure here allows two-layer and four drivings mutually.Be arranged on the ground floor vertical transfer electrode 12_2 that is provided with vertical transitions pulse Φ V_2 and Φ V_4 respectively and the 12_4 is respectively second layer vertical transfer electrode 12_1 and the 12_3 that is provided with vertical transitions pulse Φ V_1 and Φ V_3.
In every layer, the pattern of vertical transfer electrode 12 is basic identical each other.As shown in the figure; Ground floor vertical transfer electrode (second electrode) 12_2 and ground floor vertical transfer electrode (the 4th electrode) 12_4 pattern are mutually the same, and second layer vertical transfer electrode (first electrode) 12_1 and second layer vertical transfer electrode (third electrode) 12_3 pattern are mutually the same.Vertical transfer electrode 12_1 and vertical transfer electrode 12_2 overlap each other with double-layer structure, and vertical transfer electrode 12_3 and vertical transfer electrode 12_4 overlap each other in two-layer structure.Ground floor is different with second layer pattern.
Four kinds of vertical transfer electrodes 12 have covered the major part of the image pick-up section 10a of CCD solid-state image pickup device 10, and with the two-layer structure setting, between electrode, have big overlap capacitance.
Structure and equivalent electric circuit
Fig. 3 A-3C illustrates the layout pattern of vertical transfer electrode 12 of the CCD solid-state image pickup device 10 of Fig. 1, semiconductor substrate SUB (first semiconductor substrate), and output amplifier 16.Fig. 3 A is the plane graph of an optical sensor, and Fig. 3 B is formed in the plane graph of the MOS transistor part in the output amplifier 16, and Fig. 3 C is the cutaway view of the MOS transistor part among Fig. 3 B.
In image pick-up section 10a, PWELL-#2a (instance of second semiconductor substrate) is formed on the surface of silicon semiconductor substrate NSUB.On the direction from right to left of left side, be successively set on the PWELL-#2a is optical sensor 11; By the PN junction photodiode, read gate portion ROG, PWELL-#1; Be formed on the vertical transitions register 13 (BC representes by the V register) on the PWELL-#1, and raceway groove blocks portion.This board structure is identical with the IT-CCD structure.
Being arranged on these elements is the dielectric layer (not shown), is provided for the vertical transfer electrode 12 (12_1 or 12_3) of vertical transitions register 13 on it, thereby forms gauge hole 118.Light shielding layer 119 is formed on the dielectric layer (not shown) on the vertical transfer electrode 12 so that gauge hole 118 is formed on the mode on the optical sensor 11.Vertical transfer electrode 12 is provided with a kind of (Φ V_1 or the Φ V_3) in four kinds of vertical transitions pulses.
Usually the vertical transfer electrode 12 that covers CCD solid-state image pickup device 10 is limited the gauge hole on the optical sensor 11 118 with light shielding layer 119.Through this gauge hole 118, rayed is on optical sensor 11.
In output amplifier 16, PWELL-#2b (instance of second semiconductor substrate) is formed on the silicon semiconductor substrate NSUB, just as in image pick-up section 10a.Transistor 120 is formed on the PWELL-#2b.Also being arranged on the transistor 120 is electrode 121, and the dielectric layer (not shown) inserts therebetween.
The VSUB terminal 130 of semiconductor substrate NSUB shown in the cutaway view of Fig. 3 C, the terminal 131 of PWELL-#2a, and the terminal 132 of PWELL-#2b is provided with standard DC bias voltage Vbias.As shown in the figure, VSUB terminal 130 is provided with DC bias voltage Vbias, the terminal 131 of PWELL-#2a and PWELL-#2b and 132 ground connection.Terminal 131 and 132 also is known as PWELL earth terminal 131 and 132.
Shown in Fig. 3 C, in image pick-up section 10a, coupling capacitor C1 is formed between vertical transfer electrode 12 and the light shielding layer 119, and coupling capacitor C2 is formed between vertical transfer electrode 12 and the semiconductor substrate NSUB.Because back of the body matrix effect (back gate effect), in output amplifier 16 1 sides, coupling capacitor C3 is formed between the grid and semiconductor substrate NSUB of transistor 120.
Equivalent condenser CL between each vertical transfer electrode 12 and the CCD substrate is considered to approximate the parallelly connected component of coupling capacitor C1 and C2.The capacitor relevant with vertical transfer electrode 12 except that coupling capacitor C1 with the C2, with the electrode capacitor (seeing the C64 of Fig. 4 A and 8A) of other vertical transfer electrode 12.
The earth resistance that appears in the CCD solid-state image pickup device 10 comprises the light shielding layer resistor R 1 that is created between light shielding layer 119 and the ground GND, and the substrate resistance device R2 of semiconductor substrate NSUB.Whole earth resistance R is considered to approximate the parallelly connected component of light shielding layer resistor R 1 and substrate resistance device R2.
About light shielding layer 119 and the ground resistance between the GND, light shielding layer resistor R 1 also comprises the protective resistor R12 in hundreds of Europe to tens kilo-ohm of being intended to be used to prevent electrostatic breakdown except the equivalent resistance R10 that comprises light shielding layer 119.Because protective resistor R12 is through terminal 133 ground connection, so the equivalent resistor R10 of light shielding layer 119 is in light shielding layer 119 1 sides rather than in end 133 sub sides.Overall optical screen resistor R 1 is the equivalent resistor R10 of light shielding layer 119 and the parallelly connected component of protective resistor R12.Because the resistance value of protective resistor R12 is greater than the resistance value of the equivalent resistor R10 of light shielding layer 119, so earth resistance R is mainly limited substrate resistance device R2.
As not only being known from Fig. 2 but also from Fig. 3 A-3C, four kinds of vertical transfer electrodes 12 extensively cover the image pick-up section 10a of CCD solid-state image pickup devices 10.Therefore, substrate voltage is in response to the vertical transitions pulse Φ V fluctuation of supplying with vertical transfer electrode 12.In other words, on semiconductor substrate NSUB, produce noise Noise1.Owing to form the back of the body matrix effect of the transistor 120 of output amplifier 16 on the substrate, noise Noise1 is coupled on the transistor 120 through coupling capacitor C3 then.The result is that noise is added to and exports on the signal, has produced vertically-striped noise.
Because the noise Noise2 that the vertical transitions pulse Φ V on the supply vertical transfer electrode 12 causes makes the PWELL-#2b of output amplifier 16 fluctuate through coupling capacitor C1, light shielding layer 119, light shielding layer resistor R 1 and ground GND.Owing to form the back of the body matrix effect of the transistor 120 of output amplifier 16, noise Nosie2 causes on transistor 120, and on the output signal that is added to, thereby become vertically-striped noise.
How controlling the fluctuation of semiconductor substrate NSUB and the PWELL-#2b fluctuation of output amplifier 16 is very important in noise control.
The analysis of noise generation mechanism
Fig. 4 A-4C and Fig. 5 A1-5B2 from the viewpoint analysis of circuit analysis the fringes noise generation mechanism.Fig. 4 A-4C shows the relation between the equivalent electric circuit of vertical driver and CCD solid-state image pickup device 30.Fig. 5 A1-5B2 shows the step response of vertical transitions pulse Φ V.
In the side of image pick-up section 10a, between vertical transfer electrode 32 and light shielding layer, form coupling capacitor C1, between vertical transfer electrode 32 and semiconductor substrate NSUB, form coupling capacitor C2.In output amplifier 36 1 sides, because back of the body matrix effect, coupling capacitor C3 is formed between the transistorized grid and semiconductor substrate NSUB that forms output amplifier 36.These elements are not shown in Fig. 4 A-4C.
Equivalent condenser CL between each vertical transfer electrode 32 and the CCD substrate is considered to approximate the parallelly connected component of coupling capacitor C1 and coupling capacitor C2.Comprise except that coupling capacitor C1 and the C2 and electrode capacitance other vertical transfer electrode 32 with vertical transfer electrode 32 relevant electric capacity.
The earth resistance that exists in the CCD solid-state image pickup device 30 comprises the light shielding layer resistor R 1 that produces between light shielding layer 119 and the ground GND, and the substrate resistance device R2 of semiconductor substrate NSUB.Whole earth resistance R is considered to approximate the parallelly connected component of light shielding layer resistor R 1 and substrate resistance device R2.
Shown in Fig. 4 A-4C, CCD solid-state image pickup device 30 is illustrated as the CCD solid-state image pickup device 60 in the equivalent electric circuit, is driven by drive circuit 4.CCD solid-state image pickup device 60 in the equivalent electric circuit comprises the grounding resistor 61 as the equivalent resistor of CCD substrate, and it is corresponding to the earth resistance R of Fig. 3.Grounding resistor 61 approximates the parallelly connected component of light shielding layer resistor R 1 and substrate resistance device R2.Resistor R 62 is the electrode resistance of vertical transfer electrode 32 with R63.Capacitor C62 and C63 represent the equivalent condenser between vertical transfer electrode 12 and the CCD substrate.Capacitor C64 represents the equivalent condenser between the electrode.
Capacitor C62 and C63 represent the equivalent capacity that forms between vertical transfer electrode 12 and the CCD substrate; Corresponding to each vertical transfer electrode 12 among Fig. 3 and the equivalent capacity CL between the CCD substrate, and equal the parallelly connected component of coupling capacitor C1 and coupling capacitor C2.Capacitor C64 represents the equivalent capacity of electrode.
The equivalent capacity of electrode depends on that pixel quantity, used technology and layout structure change greatly in the ccd image pickup device.Usually, equivalent capacity CL (capacitor C62 and C63) arrives in the scope of 1000pF 100, and grounding resistor R61 is tens Europe.Among resistor R 62 and the R63 each arrives in the scope in hundreds of Europe tens.
For providing the vertical driver 40 of vertical transitions pulse Φ V, vertical transfer electrode 32 is arranged in the drive circuit 4.Vertical driver 40 produces vertical transitions pulse Φ V_1 to Φ V_4, ccd image pickup device 60 comprise respectively be provided with vertical transitions pulse Φ V_1 to the vertical transfer electrode 32_1 of Φ V_4 to 32_4.
Easy for explaining, shown in Fig. 4 A-4C, vertical driver 40 only produces single vertical transitions pulse Φ V (output voltage V out).In fact, CCD solid-state image pickup device 60 serves as that the basis is driven by a plurality of drivers (for example, by other vertical driver or other horizontal driver 70) with each transfer electrode.For example, quantity is configured to drive corresponding vertical transfer electrode 32 with the corresponding vertical driver 40 of kind (phase place) quantity of vertical transfer electrode 32.
We can find from the equivalent electric circuit of CCD solid-state image pickup device 60, if see from the angle of vertical driver 40, CCD solid-state image pickup device 60 (CCD solid-state image pickup device 30) is the capacitive reactance load.
The equivalent electric electrode capacitance of CCD solid-state image pickup device depends on pixel number, used technology and layout structure and is very different.Typically, equivalent capacity CL (capacitor C62 and C63) falls into 100 in the scope of 1000pF, and grounding resistor R61 is approximately tens Europe.Among resistor R 62 and the R63 each falls into tens in the scope in hundreds of Europe.
For providing the vertical driver 40 of vertical transitions pulse Φ V, vertical transfer electrode 32 is arranged in the drive circuit 4.Vertical driver 40 produces vertical transitions pulse Φ V_1 to Φ V_4, ccd image pickup device 60 comprise respectively be provided with vertical transitions pulse Φ V_1 to the vertical transfer electrode 32_1 of Φ V_4 to 32_4.Easy for explaining, shown in Fig. 4 A-4C, vertical driver 40 only produces single vertical transitions pulse Φ V (output voltage V out).In fact, CCD solid-state image pickup device 60 serves as that the basis is driven by a plurality of drivers (for example, by other vertical driver or other horizontal driver 70) with each transfer electrode.
Therefore vertical driver 40 offer end 401 and 402 from output 404 outputs one of constant voltage V1 and V2 as output voltage V out, and provide output voltage V out to CCD solid-state image pickup device 60.Voltage V1 can be high level, and voltage V2 can be low level.
CCD solid-state image pickup device 60 shows as at its equivalent electric circuit, and the output voltage V out that responds vertical drivers 40 by electrode 601 drives.For this reason, drive signal is applied on the grounding resistor R61 through the capacitor 62 as the equivalent capacity between electrode 601 and the CCD substrate.Therefore noise contribution in response to output voltage V out has appearred.
CCD solid-state image pickup device 60 shows as at its equivalent electric circuit, is also driven by other vertical driver or other horizontal driver (hereinafter being called driver 70).Therefore the transient changing interfere with electrode 601 of the driving voltage on another electrode 602, causes the for example image degradation of crosstalk noise.
Drive signal on another electrode 602 is applied to grounding resistor R61 through the capacitor 63 as the equivalent capacity that exists between electrode 602 and the CCD substrate, and 61 expressions of this resistor R approximate the equivalent resistance of CCD substrate of the parallelly connected component of light shielding layer resistor R 1 and substrate resistance device R2.Drive signal on another electrode 602 appears on the electrode 601 through the capacitor C64 as the equivalent electric interelectrode capacitance, is applied on the grounding resistor R61 through the capacitor C63 as the equivalent capacity between electrode 601 and the CCD substrate then.
Shown in Fig. 4 B, if the CCD solid-state image pickup device is driven by the different vertical transitions pulse Φ V of phase place, other VSUB of phase difference in response to output voltage V out changes and will occur so, and in image, noise contribution occurs.Below Fig. 4 C will be discussed.
The following effect of describing grounding resistor R61 in the vertical transfer electrode 12 with reference to figure 5A1-5B2 in more detail.When Fig. 5 A1 shows did not have grounding resistor R61 (resistance value of grounding resistor R61 is zero), the equivalent electric circuit of response was got on the rank that obtain output voltage V out.Fig. 5 A2 shows response wave shape.Fig. 5 B1 shows has grounding resistor R61 when (resistance of grounding resistor R61 is non-vanishing), and the rank that obtain output voltage V out are the equivalent electric circuit of response more.Fig. 5 B2 shows response wave shape.The response wave shape of Fig. 5 A2 and Fig. 5 B2 obtains in analogue test.
With reference to figure 5A1 and 5B1, resistor R 44 be vertical driver 40 output resistor (output impedance Ro) and as the resistor R 62 of the conductor resistance of vertical transfer electrode 12 with (Ro+R62).At this moment, the output resistance of vertical driver 40 mainly is the equivalent resistance (equiva lent impedance) of switch 48 and 49.
In the equivalent electric circuit shown in Fig. 4 A and 4B and Fig. 5 A1 and the 5B1, the rank of output voltage V out (being provided with the vertical transitions pulse Φ V of voltage magnitude V) are got over Response Table and are shown following equality (1):
Output voltage V out (t)=V [1-(Ro/ (Ro+R61)) exp (t/ (C62 (Ro+R61)))] ... (1)
When time t=0,, obtain t=0 output voltage V out constantly and be expressed as equality (2) t=0 substitution equality (1):
Output voltage V out (0)=V (R61/ (R61+Ro) ... (2)
Fig. 5 A2 shows does not have grounding resistor, i.e. the response wave shape of output voltage V out during R61=0.Fig. 5 B2 shows has grounding resistor, i.e. the response wave shape of R61 ≠ 0 o'clock output voltage V out.As shown in the figure; Line segment L1 representes to respond the rectangle vertical transitions pulse Φ V that supplies with vertical transfer electrode 12 (=V1) response wave shape; Response wave shape when the response wave shape when line segment L2 representes that resistor R o has small resistance value, line segment L3 represent that resistor R o has big resistance value.
Shown in Fig. 5 A2 and 5B2, if the equivalent resistor R61 of CCD substrate non-vanishing (non-vanishing under the normal condition), output voltage V out rises rapidly at the rising edge place of moment t=0.At the falling edge of moment t=1, output voltage V out descends rapidly.
At this moment, by producing in the represented electrode 601 of voltage in CCD solid-state image pickup device 60 of equality (1), cause the driving voltage of the response different to be supplied to another electrode 602 with the response of above-mentioned output voltage V out.Form differential circuit as the capacitor C64 of the electric capacity between electrode 601 and the electrode 602 and the output impedance of driver 70, make output voltage V out influence (interference) electrode 602 thus.When output voltage V out this effect when moment t=0 sharply rises quite remarkable.
If the equivalent resistor R61 of CCD substrate non-vanishing (normally non-vanishing) is represented by equality (3) at the observed voltage V603 in terminal 603 places (t).When moment t=0, voltage is through capacitor 603 influence (interference) electrodes 602.
V603(t)＝V·(R61/Ro+R61))·exp(-t/(062(Ro+R61)))…(3)
The transient changing of the driving voltage on electrode is disturbed the driving voltage on another electrode, therefore causes the for example picture degradation of crosstalk noise.In order to prevent image degradation, in the horizontal blanking cycle rather than level of significance in the prior art carry out vertical drive (vertical transitions) in the scan period.Be difficult to improve the transfer velocity in the CCD solid-state image pickup device like this.
A solution as noise problem; In open No.2005-269060 (Japanese patent application No.2004-076598) of Japanese Unexamined Patent Application and Japanese patent application No.2005-162034, proposed to adopt to have than the vertical transitions pulse Φ V that relaxes (milder) transient response to substitute the representative vertical transfer pulse Φ V with sharp-pointed transient response, these two applications all transfer common assignee of the present invention.More particularly, proposed to use mechanism's (perhaps adopting the driving method of slow instantaneous velocity) of the signal in the vertical transitions register 13 with the vertical transitions pulse Φ V transfer image pick-up section 10a that relaxes transient response.Yet we find that the driving method of low speed is not enough, and some noise problem is still unresolved.
The open No.2005-028606 of Japanese Unexamined Patent Application that transfers common assignee of the present invention has disclosed the complementary drive method that a kind of drive signal that adopts alternative inversion is used to drive the vertical transitions register; Every group of drive signal is the per two kinds of drive signals except that slow instantaneous velocity drives.
As noted earlier, owing to have grounding resistor (R61 ≠ 1), the response wave shape of output voltage V out rises rapidly at the rising edge at moment t=0 place, and descends rapidly at the trailing edge of moment t=1, and the effect of grounding resistor R61 is shown in Fig. 5 B2.This is because this fact, i.e. t=0 V603 (0)=V (R61/ (Ro+R61)) constantly in the equality (3), and when moment t=1, V603 (1)=V (1-(R61/ (Ro+R61))) does not discuss the process that draws this conclusion certainly here.This precipitous rising edge and precipitous trailing edge make and noise on image, occurs.
If carry out the complementary drive of two drive signals utilizing anti-phase, the noise contribution that in drive signal, occurs the so anti-phase that also becomes, thus cancel each other.Therefore reduced the crosstalk noise that on column direction, produces in the transfer charge process.
Be described below, comprised a kind of another mechanism that is used to strengthen noise control effect.
First embodiment (noise control technique)
Fig. 6 A and 6B and Fig. 7 A and 7B show the noise control method of first embodiment of the invention.Fig. 6 A and 6B are the sequential charts of driving sequential that is used to drive the CCD solid-state image pickup device 10 of Fig. 1 according to illustrating of first embodiment of the invention.Fig. 7 A and 7B are the sequential charts that the driving sequential of comparative example is shown.
The control method of first embodiment of the invention relates to four kinds of sequential of vertical transitions pulse Φ V, and said pulse Φ V offers vertical transfer electrode 12 and is used for vertical drive vertical transitions register 13.
In CCD solid-state image pickup device 10, receive signal charge and it is carried out opto-electronic conversion through optical sensor 11 response light quantities, then it is stored in the optical sensor 11.In the vertical blanking cycle, the signal charge of optical sensor 11 is read in the vertical transitions register 13 then.During vertical line displacement, with the signal charge of a horizontal line to 10b of charge storage portion and horizontal transfer register 14 vertical transitions.Therefore, signal charge is transferred to horizontal transfer register 14.Transfer to the signal charge of horizontal transfer register 14 and in the level of significance migration period, transfer to the outside with related dual-sampling circuit 17 through output amplifier 16.
The instantaneous driving of low speed
The characteristics of the vertical line displacement in the driving method of first embodiment are two perpendicular transfers.In the phase I of vertical transitions, carry out vertical transitions (vertical line displacement) with being provided with the vertical transfer electrode 12_1 of vertical transitions pulse Φ V1 to 12_4 respectively from image pick-up section 10a to the 10b of charge storage portion to Φ V4.In the second stage of vertical transitions, storage grid pulse Φ is provided VSTG for storage grid part STG, give to keep gate portion HLG that maintenance grid impulse Φ is provided VHLG.
Shown in Fig. 6 A; During level of significance scan period Hs; The vertical transitions pulse Φ V that employing has slow instantaneous velocity carries out low speed transient state driving (phase I vertical line displacement); And during horizontal blanking cycle H b, adopt the transfer pulse (storage grid pulse Φ VSTG and maintenance grid impulse Φ VHLG) with precipitous transient response to carry out High-speed transient and drive (displacement of second stage vertical line).By this way, reduce to appear at the noise during AP shows, shortened horizontal blanking cycle H b.The result is to have realized reading at a high speed.
As the two-stage mechanism that realizes the electric charge vertical transitions, comprise the STG of storage grid portion and keep the 10b of charge storage portion of gate portion HLG to be arranged between the transfer portion and horizontal transfer register 14 of the vertical transfer electrode 12_4 that comprises vertical transitions register 13 among the image pick-up section 10a.
When during level of significance scan period Hs, carrying out the vertical line displacement; Because vertical transitions pulse Φ V_1 influences to the crosstalk noise of Φ V_4 in the CCD transfer portion, that is, and transient phenomenon; Perhaps the effect of the rising edge Tr of these clock waveforms and the caused crosstalk noise of trailing edge Tf becomes important.According to the first embodiment of the present invention, the vertical transitions pulse Φ V_1 in the vertical line displacement reduces to the rising edge Tr of Φ V_4 and the gradient delta V/ Δ T of trailing edge Tf (Δ V is a pulse voltage, and Δ T is the time), thereby has slowed down instantaneous velocity, shown in Fig. 6 A.Instantaneous velocity Δ V/ Δ T slows to the degree that the crosstalk noise that produces to Φ V_4 owing to the vertical transitions pulse Φ V_1 that applies is eliminated by related dual-sampling circuit 17.
The test that the instantaneous velocity that vertical transitions pulse Φ V_1 is slowed down to Φ V_4 is carried out shows, if when instantaneous velocity Δ V/ Δ T is 50mV/ns or lower (not comprising zero), the crosstalk noise that in the vertical line displacement, produces is eliminated by related dual-sampling circuit 17.Even in level of significance scan period Hs, carry out the vertical line displacement, video noise (vertical ripple) also reduces the influence of CCD solid-state image pickup device output.More particularly, be that the crosstalk noise of the vertical drive pulse of 50mV/ns (do not comprise zero) does not comprise radio-frequency component in response to instantaneous velocity Δ V/ Δ T, and associated dual-sampling circuit 17 is removed fully.
The instantaneous velocity Δ V/ Δ T of vertical transitions pulse is about 1V volt/ns in the existing vertical line displacement, and the crosstalk noise that this vertical transitions pulse causes comprises the indelible radio-frequency component of CDS circuit.
Fig. 6 A shows in level of significance scan period Hs vertical transitions pulse Φ V_1 to the transient state period of the clock of Φ V_4 with ramp waveform.If the transient response of rising edge Tr and trailing edge Tf, that is, vertical transitions pulse Φ V_1 is little, so just enough to the gradient of the rising edge Tr of Φ V_4 and trailing edge Tf.Rising edge Tr and trailing edge Tf are not limited to ramp waveform, can rise and descend with index speed or stepped speed.If rising edge Tr and trailing edge Tf be with stepped rate variation, the rate of change of each ladder can be set to as far as possible for a short time so, in other words, can comprise a large amount of ladders.
According to first embodiment, be set at the instantaneous velocity that in the vertical line displacement, is applied to the vertical drive pulse in the transfer electrode during the level of significance scan period Hs low.Shown in Fig. 6 B, the instantaneous velocity that during vertical blanking cycle Vb, is applied to the vertical transitions pulse Φ V of transfer electrode is set at height, to realize high speed transfer.In the electronic image stabilisation operation of the high-speed camcorder that moves of needs, perhaps the frame in commercial use in the ranks transmits in the CCD solid-state image pickup device of (FIT), need in vertical blanking cycle Vb, carry out high-speed driving.High-speed driving during the vertical blanking cycle is carried out by the standard CMOS driver, this driver have the vertical transitions pulse Φ V_1 that is provided with having high instantaneous velocity to the vertical transfer electrode 12_1 of Φ V_4 to 12_4.
Can use the double speed driver to realize high-speed driving and the interior driven at low speed of level of significance scan period Hs in the vertical blanking cycle Vb.
Image pick-up section 10a carries out the low speed transient state and drives, and electric charge is transferred to the 10b of charge storage portion.Adopt the little gradient of vertical transitions pulse Φ V_1 to Φ V_4, that is, low instantaneous velocity Δ V/ Δ T carries out the vertical line displacement.Because the vertical transitions pulse Φ V_1 that applies can be eliminated by related dual-sampling circuit 17 to the caused crosstalk noise of Φ V_4.Therefore video noise (vertical ripple) is under control.
The 10b of charge storage portion carries out High-speed transient and drives, and with storage grid pulse Φ VSTG and maintenance grid impulse Φ VHLD electric charge is transferred to horizontal transfer register 14.Therefore can signal charge be transferred to horizontal transfer register 14 from the 10b of charge storage portion.Thereby shortened horizontal blanking cycle H b.Obtained high frame frequency.
Because the Considering Vertical pel spacing does not come design stores gate portion STG and keeps gate portion HLG, therefore can increase memory gate electrode 21 and the electrode width that keeps gate electrode 22.Reduced the resistance of electrode 21 and 22.Signal charge is transferred to horizontal transfer register 14 from the STG of storage grid portion easily.Wire wiring design easily, and combined low resistance electrode 21 and 22, also realized high speed transfer.Can in short horizontal blanking cycle H b, signal charge be transferred to horizontal transfer register 14.Even higher frame frequency also can be implemented.
Owing to combined low instantaneous velocity to drive, can carry out the vertical line displacement with the speed of between high speed and low speed, switching and drive.Even phase I vertical line displacement is carried out during level of significance scan period Hs, because vertical transitions pulse Φ V is a slow transients, therefore video noise (vertical stripes) can not appear yet.Owing to during horizontal blanking cycle H b, adopt the vertical transitions pulse (storage grid pulse Φ VSTG and maintenance grid impulse Φ VHLG) of high speed transient to carry out the displacement of second stage vertical line, so horizontal blanking cycle H b can reduce in time greatly.Obtained high frame frequency.This driving method can be applicable to high-speed applications, and for example operation of the electronic image stabilisation in the camcorder or commercial FIT use.
Complementary drive
In the driving method of first embodiment, every a plurality of vertical transfer electrode 12 composition groups, said group of vertical transitions pulse Φ V that is provided with alternative inversion.In other words, in complementarity method, adopt vertical transitions pulse Φ V.The driving method of first embodiment is that with the essence difference of the driving method of Fig. 7 A and 7B it provides four kinds of different driving pulses of phase place.
For example, the vertical transfer electrode 12 among the image pick-up section 10a of CCD solid-state image pickup device 10 has double-layer structure.The driving pulse of the vertical transfer electrode 12 usefulness complementary types that if structure is identical drives, and the voltage fluctuation that is produced by the coupling capacitance between vertical transfer electrode 12 and each PWELL-#2b and the semiconductor substrate SUB so can be cancelled out each other.
Complementary drive (anti-phase driving) allows the cycle of vertical transitions pulse Φ V to reduce by half, and the result is that the transient state period has increased by one times.Therefore can reduce instantaneous velocity, make crosstalk noise to reduce.
Because crosstalk noise reduces, even when output amplifier 16 is designed with high-gain, output amplifier 16 also can the preventing noise problem.Therefore high speed and high-gain performance can be provided.
The major advantage of complementary drive
Fig. 8 A-8C and Fig. 9 A and 9B show the major advantage of complementary drive.Fig. 8 A-8C illustrates the relation between the equivalent electric circuit of vertical driver and CCD solid-state image pickup device 30.Fig. 9 A and 9B show the principle of the vertical driver 50 that reduces instantaneous velocity.
Shown in Fig. 8 A, CCD solid-state image pickup device 10 is called CCD solid-state image pickup device 60 in the equivalent electric circuit shown in Fig. 4 A.CCD solid-state image pickup device 60 is driven by drive circuit 5.Drive circuit 5 comprises the vertical driver 50 that has only this embodiment just to have, and vertical driver 50 provides vertical transitions pulse Φ V, storage grid pulse Φ VSTG and keeps grid impulse Φ VHLG for vertical transfer electrode 12.
When electrode in the complementary drive of Fig. 8 A and 8B 68 was provided with vertical transitions pulse Φ V_1, electrode 69 was provided with the phase place vertical transitions pulse Φ V_3 opposite with vertical transitions pulse Φ V_1.When electrode 68 was provided with vertical transitions pulse Φ V_2, electrode 69 was provided with the phase place vertical transitions pulse Φ V_4 opposite with vertical transitions pulse Φ V_2.
Each switch 58 comprises impedance component.When switch 58 along with control signal Vg1 advances and during conducting, the parallel impedance value that is formed by switch 58 diminishes along delay line 56.The output impedance of the vertical driver of more particularly, seeing from output 504 50 reduces continuously.
Similar, an end of each switch 59 is connected to terminal 502 (voltage V2) jointly, and the other end of each switch 59 is connected to output 504 jointly.Switch 59 be arranged on every delay line 57 before with afterwards.When control signal Vg2 from level shift circuit 53 along delay line 57 when advancing, switch 59_1 is to 59_m conducting in succession, introduces to postpone.
Each switch 59 comprises impedance component.When switch 59 along with control signal Vg2 advances and during conducting, the parallel impedance value that is formed by switch 59 becomes littler along delay line 57.The output impedance of the vertical driver of more particularly, seeing from output 504 50 reduces continuously.
In vertical driver 50, control signal Din is through terminal 503 input, and level shift circuit 52 and 53 is provided for control signal Vg1 and the Vg2 of actuating switch 58 and 59 respectively to delay line 56 and 57.More particularly, inverter changes the input signal of one of level shift circuit 52 and 53 into high level, makes that therefore the signal of output is advanced along delay line from one of level shift circuit 52 and 53, and makes the conducting in succession of corresponding switch.
Because impedance controller 55 is controlled the output impedance of vertical drivers 50, therefore reduced the instantaneous velocity Δ V/ Δ T of output voltage V out.
Show the equivalent electric circuit of the step response of confirming output voltage V out corresponding to Fig. 8 A of Fig. 5 A1 and 5B1.Fig. 8 B corresponding to Fig. 5 A2 and 5B2 shows response wave shape.The response wave shape of Fig. 8 B obtains in the equivalent electric circuit that does not have capacitor 62.
Shown in Fig. 8 A, impedance Z 58 be the output impedance Zo that sees from the output of vertical driver 50 and as the resistor R 62 of the line resistance of vertical transfer electrode 12 with (Zo+R62).The Zo of vertical driver 50 mainly is the equiva lent impedance of each switch 58 and 59.The output impedance Zo of vertical driver 50 changes along with the time according to equality Zo (t)=rs0 exp (α t) (rs0: initial value=Zo (0), and α: constant).
The step response of output voltage V out in the equivalent electric circuit of Fig. 9 A (providing the vertical transitions pulse Φ V of voltage magnitude V) such as equality (4-1) are said to be confirmed.If ignore resistor R 62, obtain equality (4-2) as the line resistance of vertical transfer electrode 12.If do not comprise capacitor C62, obtain equality (4-3):
Output voltage V out (t)=V [1-(Z58 (t)/(Z58 (t)+R61)) exp (t/ (C62 (Z58 (t)+R61)))] ... (4-1)
Output voltage V out (t)=V [1-(Zo (t)/(Zo (t)+R61)) exp (t/ (C62 (Zo (t)+R61)))] ... (4-2)
Output voltage V out (t)=VR61/ (R61+Zo (t))=R61/ (R61+rs0exp (α t)) ... (4-3)
Particularly, when time t=0, with t=0 substitution equality (4-2) with (4-3), the output voltage V out when obtaining moment t=0 is expressed as equality (5):
Output voltage
Equality (5) and traditional output voltage V out (0)=VR61/ (R61+Ro) (seeing equality (2)) are compared the initial value rs0 of the output impedance Zo through regulating vertical driver 50, the value of the output voltage V out when more having reduced t=0 than prior art.For example, if rs0=8Ro, the value of the output voltage V out during t=0 is 1/8 of a prior art value so.Because the value of impedance Z 58 is big, therefore make that the transient response of output voltage V out is level and smooth, that is, reduced the instantaneous velocity of output voltage V out.
Also have such possibility, in the cycle of activity of vertical transitions pulse Φ V, instantaneous velocity excessively reduces, output voltage V out drop to fiduciary level (=V), and can not fully drive vertical transfer electrode 12.
In order to overcome this shortcoming, the output impedance Zo that makes vertical driver 50 is along with the time reduces.Reduce if the output impedance Zo of vertical driver 50 presses index, the transient response characteristic with output voltage V out (not comprising capacitor 62) is set at more mitigation so, shown in Fig. 9 B, more specifically, reduces the instantaneous velocity of output voltage V out.
In the equivalent electric circuit of Fig. 9 A, the output impedance Zo of vertical driver 50 is represented by exponential function.At t=0 constantly, initial value rs0 is playing the part of important factor aspect the instantaneous velocity that reduces output voltage V out, and representes that with exponential function the output impedance Zo of vertical driver 50 also is unnecessary.Yet the transmission characteristic of usually on time shaft, representing as the CCD solid-state image pickup device 60 of capacitive load has exponential factor.If the output impedance of vertical driver 50 also has exponential factor on time shaft, the transient response of output voltage V out becomes and relaxes more so.
According to the exponential factor of the transmission characteristic of the CCD solid-state image pickup device of representing on the time shaft 60, switch 58 and 59 impedance along with switch 58_1,58_2 ..., 58_m ideally index reduce.
The equivalent capacity of the electrode of CCD solid-state image pickup device greatly depends on the quantity of pixel, used technology and arrangement (the unified equipment energy characteristic that is called).Another CCD solid-state image pickup device is not necessarily best for the transient response of the driving voltage of the best known vertical driver of specific CCD solid-state image pickup device.Hope a kind of method of the transient response in response to CCD solid-state image pickup device controlling and driving voltage.
The output impedance Zo that is positioned at the vertical driver 50 of rising edge (t=0) and trailing edge (t=1) is set at greatly.Along with the past of time, output impedance Zo reduces.Even vertical transfer electrode 12 is driven by the driving pulse with low instantaneous velocity, still can keep output voltage V out (0)=V (R61/ (R61+rs0)) or output voltage V out (1)=V (1-(R61/ (R61+rs0))).In response to change in voltage, for example the vertical stripes of crosstalk noise appears on the screen, and the change in voltage of transient state period still appears on the screen.
8A-8C is said like earlier in respect of figures, is driven by vertical driver 50 as the electrode 601 of an electrode of the CCD solid-state image pickup device 60 in the equivalent electric circuit, and is driven by another driver 70 as the electrode 602 of another electrode.The driving voltage of the transient change interfere with electrode 601 in the driving voltage of another electrode 602.
According to the driving method that adopts the low instantaneous velocity of use that proposes among Japanese patent application No.2004-076598 and the No.2005-162034; This CCD solid-state image pickup device is driven by four kinds of different vertical transitions pulse Φ V of phase place, shown in Fig. 7 A and 8B.Even adopted vertical transitions pulse Φ V, also can occur still having crosstalk noise in response to other noise contribution of phase difference with low instantaneous velocity.
On the contrary; If per two vertical transfer electrodes, 12 composition groups; Vertical transitions pulse Φ V by in the complementary drive drives; That is, driven by the vertical transitions pulse Φ Va and the Φ Vb of alternative inversion, the change in voltage of the change in voltage of the electrode 601 that is driven by vertical transitions pulse Φ Va and the electrode 602 that driven by vertical transitions pulse Φ Vb cancels each other out.The result is, by the approximate vanishing of the caused voltage fluctuation of coupling capacitor between vertical transfer electrode 12 and each PWELL-#2b and the semiconductor substrate SUB.
For the change in voltage of the voltage of offsetting alternative inversion, the symmetry of electrode becomes the problem that we are concerned about., treat to comprise second layer vertical transfer electrode 12_1 and 12_3 and ground floor vertical transfer electrode 12_2 and 12_4 with during four drive mutually at two-layer electrode shown in Figure 2 by the vertical transfer electrode 12 of the driven of alternative inversion.Because the ground floor electrode is mutually the same on the pattern form and second layer electrode is mutually the same on pattern form, thus balance electric capacity, and the noise cancellation effect of complementary drive is very big.
Even the counter electrode structure through regulating the driving force of vertical driver 50, more particularly, still can make crosstalk noise minimize through the voltage magnitude of regulating driving pulse well.
Other advantage of complementary drive
Figure 10 shows other advantage of complementary drive.In the complementary drive of first embodiment of the invention; Carry out phase I vertical line displacement with the vertical transitions pulse Φ V_1 with low instantaneous velocity to Φ V_4, it is slower than the transient state driving method with low transient state that discloses among Japanese patent application No.2004-076598 and the No.2005-162034 wherein should to hang down instantaneous velocity.Therefore thin design can be incorporated into vertical transfer electrode 12_1 in 12_4.
Shown in figure 10, CCD solid-state image pickup device 10 comprises vertical transitions register 13 with optical sensor 11, reads the vertical transfer electrode 12 on gate portion ROG, embedded channel region 24 and the gate insulation layer 25.The thickness d 0 of vertical transfer electrode 12 forms thinner than the thickness d 1 described in thickness d 2 of the prior art or Japanese patent application No2004-076598 and the No.2005-162034.The shoulder height in limit sensor hole 118 reduces greatly, makes the BE of oblique incidence light ray (solid line) L0 minimize like this.
This layout has increased the size of gauge hole 118, has improved the light collecting effect of oblique incidence light ray, and causes high sensitivity.Owing to controlled the blocking-up of oblique incidence light ray, therefore also reduced the generation of shade.Oblique incidence light ray L1 (being represented by chain-dotted line) shows the disconnected state of photoresistance of Japanese patent application No.2004-076598 and the described thickness d 1 of No.2005-162034, and oblique incidence light ray L2 (being represented by two chain-dotted lines) shows the disconnected state of photoresistance of known oblique incidence light ray.
Drive the instance of sequential
Figure 11 to 18 shows other instance that drives sequential.In the superincumbent description, four kinds of vertical transitions pulse Φ V have been adopted.Vertical transitions pulse Φ V is not limited to these four kinds.For example, Figure 11 shows the eight-phase driving method of the routine of eight kinds of vertical transitions pulses of continuous employing Φ V.In contrast, Figure 12 shows two kinds of anti-phases of eight kinds of vertical transitions pulse Φ V.More particularly, vertical transitions pulse Φ V_1 and Φ V_3 are inverting each other, and vertical transitions pulse Φ V_2 and Φ V_4 are inverting each other; Vertical transitions pulse Φ V_3 and Φ V_5 are inverting each other; Vertical transitions pulse Φ V_4 and Φ V_6 are inverting each other, and vertical transitions pulse Φ V_5 and Φ V_7 are inverting each other, and vertical transitions pulse Φ V_6 and Φ V_8 are inverting each other; Vertical transitions pulse Φ V_7 and Φ V_1 are inverting each other, and vertical transitions pulse Φ V_8 and Φ V_2 are inverting each other.
Even when the moving image on the VGA pattern picks up and drives when adopting conventional eight-phase to drive method, also can be with two anti-phases in eight phase voltages, shown in figure 13.More particularly, vertical transitions pulse Φ V_1 and Φ V_4 are inverting each other, and vertical transitions pulse Φ V_2 and Φ V_5 are inverting each other; Vertical transitions pulse Φ V_3 and Φ V_6 are inverting each other; Vertical transitions pulse Φ V_4 and Φ V_7 are inverting each other, and vertical transitions pulse Φ V_5 and Φ V_8 are inverting each other, and vertical transitions pulse Φ V_6 and Φ V_1 are inverting each other; Vertical transitions pulse Φ V_7 and Φ V_2 are inverting each other, and vertical transitions pulse Φ V_8 and Φ V_3 are inverting each other.
Pseudo-complementary drive
In above-mentioned instance, in the driving two kinds inverting each other.Shown in Figure 14 and 15, the drive signal of a kind of drive signal and a plurality of other types makes up, and makes drive signal inverting each other as a whole.More particularly, per at least three kinds of drive signals are formed one group, make these three kinds of drive signals realize that anti-phase drives effect.Preferably, will hang down instantaneous velocity and the complementary drive method makes up.Shown in figure 14, instantaneous velocity is set at even lower.
Shown in Figure 14 and 15, with a drive signal and a plurality of other drive signal combination in groups to realize the anti-phase driving condition.Shown in figure 16, if the drive signal local interruption is acceptable.Figure 16 shows the pseudo-anti-phases of four phase places (complementation) and drives, and it uses when being applicable on mega pixel CCD solid-state image pickup device the drive movement image.
Figure 17 shows five, ten phase place Continuous Drive methods of the routine that adopts ten kinds of vertical drive pulse Φ V.Shown in figure 18, be set at inverting each other with predetermined two kinds in ten kinds.
Shown in Fig. 4 C, when being vertical transfer electrode 12 when the drive signal of essentially rectangular is provided in the prior art, the VSUB variation has been controlled in the use of the anti-phase driving method of first embodiment, has therefore controlled the video noise composition.Yet, exist slight phase shift to cause occurring possibility as the peak voltage fluctuation of video noise.
Second embodiment (noise control technique)
Figure 19 shows the noise control method according to second embodiment of the invention.The noise control method of second embodiment is relevant with the ACTIVE CONTROL method, and it is controlled at the noise that the crosstalk noise (coupled noise) that causes on PWELL-#2b and the semiconductor substrate SUB in the CCD solid-state image pickup device is caused on one's own initiative.
Conventional vertical driver 40 adopts the different vertical transitions pulse Φ V of the phase place with precipitous transient response such in the prior art as vertical driver.
Shown in the sectional view of Fig. 3 C, the VSUB end 130 on the semiconductor substrate NSUB is provided with DC bias voltage Vbias, and the PWELL earth terminal 132 of the PWELL-#2b on output amplifier 16 sides is connected to ground GND.Use these terminals, provide the noise compensation signal to offset coupled noise from the outside.
Shown in figure 19, the image pick-up device 1 of second embodiment comprises respectively CCD solid-state image pickup device identical with prior art 30 and vertical driver 40.In addition, image pick-up device 1 comprises the noise compensation signal supply circuit 200 as the characteristic of second embodiment of the invention.
This noise compensation signal supply circuit 200 comprises negative circuit (inverting amplifier 210), is used for the vertical transitions pulse Φ V that provides from vertical driver 40 is carried out anti-phase, thereby rp pulse is provided in VSUB end 130 and the PWELL earth terminal 132 each.Noise compensation signal supply circuit 200 also comprises waveform shaping circuit 220.Therefore this noise compensation signal supply circuit 200 provides phase place and the opposite waveform of noise that is transferred to PWELL-2#b and semiconductor substrate SUB from the output of vertical driver 40 for VSUB end 130 and PWELL earth terminal 132.
The output signal that this waveform shaping circuit 220 adopts from negative circuit 210 produces noise Noise1 noise compensation signal CompN1 and the CompN2 opposite with Noise2 that causes on phase place and PWELL-2#b and the semiconductor substrate SUB.Consider coupled noise with derivative characteristic; The series circuit of capacitor 222 and resistor 224 is arranged to; So that capacitor 222 is arranged on the outlet side of negative circuit 210 and the mode of the ground connection GND side that resistor 224 is arranged on negative circuit 210, form the CR differential circuit.The tie point of capacitor 222 and resistor 224 is connected in VSUB end 130 and the PWELL earth terminal 132 each.For VSUB end 130 provides DC bias voltage Vbias, resistor 224 is connected to ground GND through DC bias voltage Vbias.
According to second embodiment, the vertical transitions pulse Φ V that provides from the output of vertical driver 40 carries out anti-phase by negative circuit 210.Therefore waveform shaping circuit 220 with the output signal shaping of negative circuit 210 for PWELL-#2b and semiconductor substrate SUB on the noise Noise1 and the noise compensation signal CompN1 and the CompN2 of Noise2 anti-phase that cause, then noise compensation signal CompN1 and CompN2 are offered VSUB and hold 130 and PWELL earth terminal 132.Like this; Because PWELL-#2b in the CCD solid-state image pickup device and the coupled noise Noise1 and the Noise2 that crosstalk and cause on the semiconductor substrate SUB; Therefore can offset by the noise compensation signal CompN1 and the CompN2 of anti-phase, controlled vertically-striped noise.
Because the transient response that the coupled noise Noise1 that causes on PWELL-#2b and the semiconductor substrate SUB in the CCD solid-state image pickup device and Noise2 depend on equipment energy characteristic and vertical transitions pulse Φ V, so another CCD solid-state image pickup device is not necessarily the best for the CR time constant of the amplifier gain of the negative circuit 210 of given CCD solid-state image pickup device optimum and waveform shaping circuit 220.Can come resonance-amplifier gain and CR time constant according to the transient response of CCD solid-state image pickup device and vertical transitions pulse Φ V, produce the noise compensation signal CompN1 and the CompN2 of actual the best.
Noise compensation signal CompN1 and CompN2 use the combination results of inverting amplifier and CR differential circuit.Only this set is proposed from illustrative purpose.Can adopt other circuit setting.The waveform of the inversion signal that produces and the characteristic of actual coupled noise Noise1 and Noise2 coupling are very important.
Here known vertical driver 40 is used as vertical driver, adopts the different vertical transitions pulse Φ V of phase place with the such precipitous transient response of prior art.Can be with the phase place that discloses among Japanese patent application No.2004-076598 and the No.2005-162034 different and have the vertical transitions pulse Φ V of low instantaneous velocity and noise control method that low transient state anti-phase drives first embodiment makes up.
The 3rd embodiment (noise control technique)
Figure 20 A-20E shows the noise control method of third embodiment of the invention.The noise control method of the 3rd embodiment relates to the noise control circuit that for example is arranged on the low pass filter between vertical driver and the CCD solid-state image pickup device.The 3rd embodiment is greatly different with prior art, is should be transferred to vertical transfer electrode because be considered to importantly in the prior art with the approaching as far as possible form of its original shape from the drive signal of vertical driver.
If the vertical transitions pulse Φ V that provides from vertical driver 40 offers vertical transfer electrode through the noise control circuit; Even in the output of vertical driver, produce unforeseen spike noise so, because the crosstalk noise that spike noise causes also can be reduced.
Here adopt known vertical driver 40 as vertical driver, adopt the vertical transitions pulse Φ V that phase place is different and have precipitous transient response such in the prior art.The 3rd embodiment can be different with the phase place that discloses among Japanese patent application No.2004-076598 and the No.2005-12034 and vertical transitions pulse Φ V with low instantaneous velocity; Low transient state anti-phase drives the noise control method of first embodiment; And the noise control method that second embodiment of the opposite noise control signal of the noise that produces in phase place and the CCD solid-state image pickup device is provided, make up.
This noise control circuit itself can provide noise control effect, perhaps noise control effect can be provided with the element function combinations of vertical driver 40 and CCD solid-state image pickup device 80.
Figure 20 A shows the equivalent electric circuit of the connection between known vertical driver and the CCD solid-state image pickup device.Shown in Figure 20 A, CCD solid-state image pickup device 30 illustrates as the CCD solid-state image pickup device 80 in the equivalent electric circuit.Only consider identical among the CCD solid-state image pickup device 80 shown in this equivalence circuit and Fig. 4 A and the 8A from the viewpoint of electrode 601.Capacitor C82 has 100 to the interior electric capacity of 1000pF scope, and resistor R 1 is about tens ohm, and the wiring resistor R 82 of vertical transfer electrode 12 has tens ohm of resistance to hundreds of ohm.
In contrast, the noise control circuit 310 of Figure 20 B comprises holding wire and the ground capacitor 316 between the GND that vertical driver 40 is connected to vertical transfer electrode 12.Capacitor 316 forms the RC low pass filter with the output resistor Ro (perhaps output impedance Zo) of vertical driver 40.Even unforeseen spike noise appears in the output of vertical driver, therefore reduced in response to the crosstalk noise of this spike noise.
In first embodiment of Figure 20 B, the output resistor Ro of vertical driver 40 and capacitor 316 form low pass filter.Output resistor Ro has low resistance usually, for enough filter effects are provided, the capacitance of capacitor 316 is set at greater than the counterpart among second embodiment and the 3rd embodiment.
The noise control circuit 320 of conduct second instance shown in Figure 20 C comprises resistor 322 and capacitor 326; The resistance of this resistor 322 is greater than the output resistor Ro (perhaps output impedance Zo) in the holding wire that connects vertical driver 40 and vertical transfer electrode 12, and capacitor 326 is arranged on to extend and connects resistor 322 between the holding wire and ground GND of vertical transfer electrode 12.Resistor 322 forms the RC filter with capacitor 326.
Because resistance value forms the RC low-pass filter circuit greater than the resistor 322 of output resistor Ro (output impedance Zo) with capacitor 326 in a second embodiment; Even therefore the capacitance of capacitor 326 is set to the counterpart 316 less than first embodiment, also can form enough filters.Owing to inserted resistor 322, voltage drop appears between grounding resistor R1 and the wiring resistor R 82, and has such possibility, and the voltage magnitude that promptly offers the vertical transitions pulse Φ V of terminal 801 reduces, and makes driving force reduce.
The noise control circuit 330 of conduct the 3rd instance shown in Figure 20 D comprises and connects the inductor (coil) 334 of vertical driver 40 in the holding wire of vertical transfer electrode 12.The inductor 334 that forms L type structure has enough little equivalent resistance.Vertical transitions pulse Φ V is provided to vertical transfer electrode 12 from vertical driver 40 through inductor 334.
Capacitor C82 in inductor 334 and the CCD solid-state image pickup device 80 forms the LC low pass filter together.More specifically, because grounding resistor R1 appears in the CCD solid-state image pickup device 80 with wiring resistor R 82, therefore formed the RLC low pass filter.
Even unforeseen spike noise produces in the output of vertical driver 40, also can reduce because the caused crosstalk noise of this spike noise.Because the equivalent resistance of the inductor 334 that is inserted is little, therefore unlike second instance that adopts resistor 322, descending can not appear in driving force.
In the noise control circuit 340 of the 4th instance of the conduct shown in Figure 20 E, the inductor 334 with little equivalent resistance is arranged on and connects vertical driver 40 in the holding wire of vertical transfer electrode 12.Vertical transitions pulse Φ V is provided to vertical transfer electrode 12 from vertical driver 40 through inductor 344.In addition, capacitor 346 is arranged on connection inductor 344 between the holding wire and ground GND of vertical transfer electrode 12.Therefore LC is provided structure.
Inductor 344 has been combined to form the LC low pass filter with capacitor 346.Even when unforeseen spike noise produces in the output of vertical driver 40, also can reduce because the crosstalk noise that this spike noise caused.Because the equivalent resistance of the inductor 344 that is inserted is enough little, therefore unlike second instance that adopts resistor 322, descending can not appear in driving force.
Except that the structure of the 3rd instance, the 4th embodiment also comprises capacitor 346.Low-pass filter circuit is formed by the capacitor C82 in the CCD solid-state image pickup device 80 (more accurately, with grounding resistor R1 and 82 combinations of wiring resistor R).Except the filter effect of the 3rd instance, further filter effect is provided by capacitor 346 in addition.
Capacitor 346 is directly worked with inductor 344, and the capacitor C82 in the CCD solid-state image pickup device 80 works with inductor 344 with wiring resistor R 82 through grounding resistor R1.Therefore obtained damping.If the electric capacity of two capacitors is approximate identical, capacitor 346 provides more filter effect so.
The noise control circuit 310-340 of from first to the 4th instance, the 4th instance provide the minimum of driving force to descend and the highest filter effect.The 4th instance provides best setting as practical application, is the 3rd embodiment afterwards, and it provides few decline second from the bottom aspect driving force.
The 4th embodiment (noise control technique)
Figure 21 A and 21B show the noise control method of fourth embodiment of the invention.The noise control method of the 4th embodiment through with the substrate grounding resistor in equivalent electric circuit from the resistive capacitive that becomes, the acute variation of having improved that effect by substrate (SUB) grounding resistor causes at rising edge and the falling edge output voltage V out of vertical transitions pulse Φ V.
Here adopt known vertical driver 40 as vertical driver, and adopt the different vertical transitions pulse Φ V of phase place with the such precipitous transient response of prior art.The mechanism of the 4th embodiment can be different with the phase place that discloses among Japanese patent application No.2004-076598 and the No.2005-162034 and vertical transitions pulse Φ V and low transient state anti-phase with low instantaneous velocity drive in each the noise control method among first to the 3rd embodiment each make up.
Discuss like earlier in respect of figures 3A-3C and Fig. 5 A1-5B2, the light shielding layer resistor R 1 and the substrate resistance device R2 of semiconductor substrate NSUB that are formed between light shielding layer 119 and the ground GND exist as grounding resistor.Total grounding resistor R of these resistors is equivalent to the parallelly connected composition of light shielding layer resistor R 1 and substrate resistance device R2.
For make earth resistance in equivalent electric circuit from the resistive capacitive that becomes, can carry out three kinds of methods.In first method, make light shielding layer resistor R 1 be capacitive, in the second approach, make substrate resistance device R2 be capacitive, in the third method, first method and second method are made up.Figure 21 A and 21B show and are used for light shielding layer resistor R 1 from the resistive first method that becomes capacitive.
In first method, the noise Noise2 that is caused by the vertical transitions pulse Φ V that offers vertical transfer electrode 12 fluctuates the PWELL-#2b of output amplifier 16 through coupling capacitor C1, light shielding layer 119, light shielding layer resistor R 1 and ground GND.Because form the back of the body matrix effect of the transistor 120 of output amplifier 16, noise Noise2 has influenced transistor 120.The result is, first method prevents that noise is added on the output signal, has reduced vertically-striped noise.
In the second approach, on semiconductor substrate NSUB, produced noise Noise1, and owing to form the back of the body matrix effect of the transistor 120 of output amplifier 16, noise Noise1 has influenced transistor 120 through coupling capacitor C3.The result is that second method prevents that noise is superimposed upon on the output signal, thereby has reduced vertically-striped noise.
For with the substrate grounding resistor from the resistive capacitive that becomes, form the ground connection capacitive filter thereby capacitor and substrate grounding resistor be connected in parallel.For example, light shielding layer resistor R 1 mainly is considered to the equivalent resistor R10 of light shielding layer 119.It is difficult in the practice capacitor being connected to equivalent resistor R10 through terminal 133.On the other hand, as earlier in respect of figures 3C discusses, adopt terminal 133 that the protective resistor R12 that resistance value drops in the scope of hundreds of ohm to tens kilo-ohm is inserted between light shielding layer 119 and the ground GND, prevent electrostatic breakdown.Shown in Figure 21 A, if adopt terminal 133 that capacitor 412 is parallel-connected to protective resistor R12, so as the protective resistor R12 of light shielding layer resistor R 1 part in equivalent electric circuit from the resistive capacitive that becomes.
Because the cloth line resistor (as the protective resistor R12 of the part of light shielding layer resistor R 1), on the rising edge and trailing edge of vertical transitions pulse Φ V, the variation that output voltage V out (seeing Fig. 5 B2) appearance is violent.Through capacitor 412 is parallel-connected to protective resistor R12, the signal code that flows at rising edge and the falling edge of vertical transitions pulse Φ V deliberately consumes along capacitor 412.The result is that rapid change in voltage is under control.
Terminal except that terminal 133 can be used for connecting.Light shielding layer 119 covers CCD solid-state image pickup device 10 usually.If a large amount of capacitors 412 are connected to ground GND at many points, the equivalent electric circuit of Figure 21 A of gained comprises the coupling capacitor C1 that is connected light shielding layer 119 and the capacitor 412 between the ground.By this way, overall optical screen resistor R 1 always becomes capacitive at equivalent electric circuit.
Although because the cloth line resistor (as the protective resistor R12 of the part of light shielding layer resistor R 1); Rising edge and trailing edge at vertical transitions pulse Φ V; Rapid variation appears in output voltage V out (seeing Fig. 5 B2); But through capacitor 412 is parallel-connected to protective resistor R12, the signal code that flows at rising edge and the trailing edge of vertical transitions pulse Φ V consumes along capacitor 412.The result is that rapid change in voltage is under control.
Figure 21 A and 21B show light shielding layer resistor R 1 from the resistive first method that becomes capacitive.If a plurality of capacitor parallel connections are arranged between semiconductor substrate NSUB and the ground GND, substrate resistance device R2 can be from the resistive capacitive that becomes in equivalent electric circuit so.
The influence of variation and environment change
When the transfer electrode of CCD solid-state image pickup device 10 is driven by driving pulse, can reduce the instantaneous velocity of driving pulse, perhaps can adopt complementary drive.Like this, can realize the control of high-speed driving and noise simultaneously.
Driving circuit device by having the output stage of separating shown in Fig. 7 A and 7B and Fig. 8 A and 8B produces the driven at low speed pulse signal with low instantaneous velocity.At this moment, based on the unique time constant of the characteristic of the percent of pass (through rate) of for example output waveform is produced driving pulse, can not obtain guaranteeing the minimum output gradient of design capacity.Although the output driving force changes in response to load capacitance, the driving force at transient state starting point place is still constant.These possibly be problematic.
When and low speed pulse signal slight inclination level and smooth by gradient as the load of condensance drive; Only use the constant current driven load capacitance, thereby keep the gradient of the driving pulse that is disclosed like the open No.2005-269060 of Japanese Unexamined Patent Application.Only constant current driven does not have practical significance in image picking system.
The gradient of driving pulse also changes in response to the variation in variation in the load capacitance manufacturing and the driving element manufacturing.If when driving a plurality of raceway groove, there is variation in the relative drive characteristic of the load capacitance from the raceway groove to the raceway groove, and the gradient of pulse changes from the raceway groove to the raceway groove.
Possibly appear at the noise contribution in the transition process for what reduce spike for example, the impulse waveform that is input to the previous stage of drive circuit needs level and smooth.This caused the initial delay time before the transient state starting point of last pulse output.Depend on the variation of load capacitance and the variation of driving element this time of delay.
If the gradient variable of output is big, noise maybe be owing to CCD noise resistance characteristic remains on the image so.If the gradient of output diminishes, the transformation of electric current output can be overlapping with the transformation of next one output so, the transfer that possibly lead to errors.
In order to reduce the variation of variation and the driving element of load capacitance in making in making, consider that FEEDBACK CONTROL is effective.In FEEDBACK CONTROL, measure initiatively pulse signal, for example converge the transient response of expectation based on measurement result in response to the active transient response of output pulse waveform time of delay of input pulse and the percent of pass in the transition process.The waveform shaping function that FEEDBACK CONTROL is applied to the pulsed drive waveform is considered to effective.The circuit setting that comprises this function is described below.
The FEEDBACK CONTROL shaping feature of pulsed drive waveform
Figure 23 totally shows the pulse driver as an instance of the pulsed drive equipment with the FEEDBACK CONTROL shaping feature that is used for the pulsed drive waveform.Figure 25 A and 25B are the operations that the pulse driver of Figure 23 is shown, the sequential chart of the gradient characteristic that particularly changes.Figure 24 A and 24B show in detail phase-delay quantity.
Shown in figure 23, in pulse driver 600, the voltage V1 of the high level voltage of definition driving pulse is input to terminal 601, and the voltage V2 of the low level voltage of definition driving pulse is input to terminal 602.The input pulse Pin that is in logic level (for example, 0V/5V or 0V/3V) that provides from the pulse signal generator (not shown) is input to terminal 603, and the load 609 with condensance or inductive reactance is connected to terminal 604.Output pulse Pout appears at terminal 604.
Phase delay adjustment device 610, percent of pass adjuster 630 and load driver 650 constitute carries out the waveform shaping processor 660 that predetermined waveform shaping is handled to the input pulse signal.
Drive pulse waveform shaping controller 670 comprises the phase delay controller 672 as the function element of control phase delay modulator 610, and the percent of pass controller 674 that is used as the function element of control percent of pass adjuster 630.
Percent of pass controller 674 is carried out FEEDBACK CONTROL.More specifically; Percent of pass controller 674 provides percent of pass control signal P74 for percent of pass adjuster 630; So that when the output pulse Pout at monitoring terminal 604 places; The percent of pass of the variation characteristic of indication output pulse Pout converges desired value (typically, make the deviation vanishing that is worth described in the specification).
Phase delay adjustment device 610 will postpone externally or the time period of inner setting through the input pulse Pin of terminal 603 inputs, and the control signal P10 that will be postponed is provided to percent of pass adjuster 630.
Phase delay adjustment device 610 can be used as fixed amount and handles the retardation of once setting.Perhaps, phase delay adjustment device 610 can respond the dynamically control lag amount of retardation control signal P72 (in response to current state) from the phase delay controller 672 in the drive pulse waveform shaping controller 670.The mechanism of adjustment retardation will described subsequently.
The whole bag of tricks capable of using comes relative input pulse Pin to set the retardation of control signal P10.For example; Shown in Figure 24 A; The retardation tpdr1 of the transformation starting point Tsr1 of the rising edge of the output pulse Pout (the actual impulse waveform that drive load 609) of a kind of management by methods on from the rising edge of input pulse Pin to terminal 604, the retardation tpdf1 of the transformation starting point Tsf1 on perhaps from the trailing edge of input pulse Pin to the trailing edge of output pulse Pout.
Shown in Figure 24 B; The retardation tpdr2 of the predetermined voltage point Tsr2 (mid point voltage V1 and voltage V2) of another kind of management by methods from the rising edge of input pulse Pin to the rising edge of output pulse Pout, the retardation tpdf2 of the predetermined voltage point Tsf2 perhaps from the trailing edge of input pulse Pin to the trailing edge of exporting pulse Pout.
In this feedback control procedure; Phase delay controller 672 detects from the transformation of output pulse Pout and begins to the time of predetermined voltage point Tsr2 or Tsf2; The reference value of the result who is detected and inside or external setting-up is compared; P72 offers phase delay adjustment device 610 with the retardation control signal, makes error convergence become zero.Set point is renewable.
In the last method of Figure 24 A, the transformation starting point Tsr1 of effective impulse waveform and Tsf1 need be identified on the terminal 604.Shown in Figure 24 A, shown in dotted line, the pulse moderate change is difficult to accurately measure transformation starting point Tsr1 and Tsf1.In the back method of Figure 24 B, realize the measurement of predetermined voltage point Tsr2 and Tsf2 easily, predetermined voltage point Tsr2 and Tsf2 are relatively stable after changing starting point.
With any mode, retardation tpdr1 and tpdr2 and retardation tpdf1 and tpdf2 can set jointly or respectively.
The amplitude that percent of pass adjuster 630 is regulated the previous stage drive signal P30 that will offer load driver 650, thereby the percent of pass on the point (terminal 604) of regulating load driver 650 driving loads 609.
More particularly; In case detect the output transformation (starting point of rising edge or trailing edge) of regulating control signal P10 from the retardation of phase delay adjustment device 610 outputs; Percent of pass adjuster 630 provides previous stage drive signal P30 for load driver 650, and this drive signal P30 has the characteristic corresponding to the load driving ability of load driver 650.When load driver 650 drives load 609, consider the relation between load driver 650 and the load 609, adopt previous stage drive signal P30 to make the output pulse Pout on the terminal 604 have target percent of pass characteristic.If resistance is not only in load 609 and be condensance or inductive reactance, so just comprised integrated effect.Like Figure 24 A and 24B, and shown in Figure 25 A and the 25B, the signal that is applied to load 609 becomes usually and is different from original output pulse Pout.
Percent of pass adjuster 630 is handled and once was set at the fixedly percent of pass of percent of pass.Perhaps, the percent of pass adjuster 630 percent of pass control signal P74 that can respond from the percent of pass controller 674 in the drive pulse waveform shaping controller 670 dynamically regulates percent of pass (being in effective status).Use description to regulate the mechanism of percent of pass below.
Can make ins all sorts of ways sets the percent of pass of control signal P10.For example; Shown in Figure 25 A; Variation characteristic (percent of pass) SRr1 of a kind of management by methods from the voltage of the rising edge starting point Tsr1 of output pulse Pout to the voltage of rising edge end point Ter1, perhaps variation characteristic (percent of pass) SRf1 from the voltage on the output pulse Pout trailing edge starting point Tsf1 to the voltage of trailing edge end point Tef1.
Shown in Figure 25 B; Two predetermined voltage point Tsr2 (voltage between V1 and the V2 is 1/3 level place approximately down) of the rising edge of another kind of management by methods output pulse Pout and variation characteristic (percent of pass) SRr2 between the Ter2 (voltage between V1 and the V2 is gone up 1/3 level place approximately) perhaps export two predetermined voltage point Tsf2 (voltage between V1 and the V2 is gone up 1/3 level place approximately) and variation characteristic (percent of pass) SRf2 between the Tef2 (voltage between V1 and the V2 descends 1/3 level place approximately) of output pulse Pout of the trailing edge of pulse Pout.
Percent of pass controller 674 is carried out a kind of method in these methods in feedback control procedure.More particularly; Percent of pass controller 674 detects the amount of the rate of change between said two voltages that equal to export pulse Pout; The reference value of testing result and inside or external setting-up is compared, will offer percent of pass adjuster 630, make the error vanishing through control signal P74.This set point can be updated.
In a kind of method, the transformation starting point Tsr1 of the active impulse waveform at terminal 604 places and Tsf1 and transformation end point Ter1 and Tef1 need be identified before Figure 25 A.Tpdr1 is the same with trailing edge retardation tpdf1 difficulty as identification rise edge delay amount, and the accurate measurement of starting point and end point is difficult.Should be noted that output pulse Pout can begin rising edge and trailing edge lenitively, shown in the dotted line among Figure 25 A, possibly near changing starting point, high-frequency noise occur.In back a kind of method of Figure 25 B, corresponding to rise time delay amount tpdr2 and fall time delay amount tpdf2, the variation characteristic after changing beginning between stable two voltages is identified easily.
In either case, rising edge percent of pass SRr1 and SRr2 and trailing edge percent of pass SRf1 and SRf2 can together or respectively be provided with.
In the present embodiment, input pulse Pin carries out FEEDBACK CONTROL to retardation and the variation characteristic (percent of pass of transformation place) of the output pulse Pout on the terminal 604 relatively.If strict control lag amount and variation characteristic are unnecessary, can carry out FEEDBACK CONTROL to one in retardation and the variation characteristic so.
If the retardation at rising edge place and the inhomogeneous variation of the retardation of falling edge have so also influenced percent of pass.On the contrary, percent of pass can change rising edge characteristic and trailing edge characteristic, and the result is to have influenced retardation.In fact, retardation and variation characteristic influence each other.Therefore preferably retardation and variation characteristic are all carried out FEEDBACK CONTROL.
In pulse driver 600, load driver 650 drives load 609.Initiatively export pulse Pout on the drive pulse waveform shaping controller 670 monitoring terminals 604; And the execution FEEDBACK CONTROL, so that the conversion characteristic (for example exporting retardation and the variation characteristic of the relative input pulse Pin of pulse Pout) of output pulse Pout becomes desired value.
With the conversion characteristic of output pulse Pout be designed to load 609 manufacture processes in variation and the variation that is arranged in the manufacture process of driving element of output stage of load driver 650 irrelevant.Therefore with optimal transition characteristic pulsed drive load 609.In addition, the environmental change that conversion characteristic is designed to change with for example variations in temperature and humidity has nothing to do.
The characteristic of the driving force of load driver 650 and load 609 (equivalent input capacitance and equivalent input inductance) can be in response to variation in the manufacture process that can't expect parasitic antenna (for example parasitic capacitance and stray inductance), load 609 in the design phase and for example environmental change such as variations in temperature or humidity variation and changing.Under the sort of situation, the gradient of the retardation of the relative input pulse Pin of output pulse Pout and output pulse Pout can be regulated, and makes the conversion characteristic (for example retardation and percent of pass) that drives output fall in the scope of specification requirement.
Use mechanism of the present invention, drive signal has constant delay amount and constant gradient in the drive circuit of imaginary loading, and no matter the variation and the environmental change of load characteristic and drive characteristic.Even confirm output timing to satisfy the requirement of load in the systems technology requirement, drive waveforms has the repeatability of height, falls into the interior error minimum of scope of the specification requirement of retardation and percent of pass.
The load driver of condensance load
Figure 26 is the block diagram of load driver 650 of an instance of the pulse driver 600 of Figure 23.Load driver 650 drives the load 609 with condensance.Figure 27 is the sequential chart of operation that the pulse driver 600 of Figure 26 is shown.
When load 609 was the condensance load, load driver 650 comprised the current output circuit of current drives load 609.Percent of pass adjuster 630 designs like this, promptly makes the previous stage drive signal P30 be suitable for being undertaken by load driver 650 current drives offer load driver 650.
More particularly, percent of pass adjuster 630 comprises electric current efferent 632_H and 632_L.Electric current efferent 632_H and 632_L export previous stage drive signal P30_H and previous stage drive signal P30_L complimentary to one another to load driver 650, the reference current Is of the rising edge of the definite output of expression pulse Pout or the gradient of trailing edge.
The output stage 652_Lout of the output stage 652_Hout of current mirror circuit 652_H and current mirror circuit 652_L is connected to each other (corresponding to current adder) at tie point 656, and this tie point 656 is connected to load 609 through terminal 604 again.The input stage 652_Hin of current mirror circuit 652_H is connected to the electric current efferent 632_H of percent of pass adjuster 630, and the input stage 652_Lin of current mirror circuit 652_L is connected to the electric current efferent 632_L of percent of pass adjuster 630.
For percent of pass adjuster 630 provides respectively corresponding to the control signal P10_H of rising edge place retardation and corresponding to the control signal P10_L of falling edge retardation.
Percent of pass adjuster 630 provides previous stage drive signal P30_H for the input stage 652_Hin of current mirror circuit 652_H in response to control signal P10_H through electric current efferent 632_H, and responsive control signal P10_L provides previous stage drive signal P30_L for the input stage 652_Lin of current mirror circuit 652_L through electric current efferent 632_L.
Because this set, percent of pass adjuster 630 is exported previous stage drive signal P30_H and the P30_L that represents reference current Is to load driver 650, and wherein Is confirms the rising edge of output pulse Pout or the gradient of trailing edge.Comprise this load driver 650, the reference current Is multiplication by constants (xNH and xNL) of each in rising edge that in replica current, will produce by percent of pass adjuster 630 and the trailing edge to upper and lower current mirror circuit 652_H and 652_L.Then output current Iout is offered the load 609 with condensance.
In fact, with output current Iout_H (=+ Io) be provided to load 609 (power operation) from upside current mirror circuit 652_H, and downside current mirror circuit 652_L from load 609 absorb output current Iout_L (=-Io) (absorb operation).
The load voltage Vout that on terminal 604, produces, the integration of the output current Iout through will offering load 609 is confirmed divided by the capacitance of load 609.Shown in figure 27; If in the transformation period constant current is applied to the load 609 (capacitive load) with condensance continuously, load voltage Vout linear change is to the supply voltage V1 of current mirror circuit 652_H or the supply voltage V2 of current mirror circuit 652_L.
When load voltage Vout reached supply voltage V1, the output stage 652_Hout of upside current mirror circuit 652_H had lost its constant current characteristic, and is connected to supply voltage V1 through its equivalent resistor.Therefore load voltage Vout is fixed to supply voltage V1.When load voltage Vout arrived supply voltage V2, the output stage 652_Lout of downside current mirror circuit 652_L lost its constant current characteristic, and is connected to supply voltage V2 through its equivalent current.Therefore load voltage Vout is fixed to supply voltage V2.
Be provided to the previous stage drive signal P30_H of current mirror circuit 652_H as electric current efferent 632_H from percent of pass adjuster 630; During the starting point from the rising edge of output pulse Pout arrives supply voltage V1 to load voltage Vout (the practice; In absorbing operation) reference current Is is offered input stage 652_Hin reliably, and before current mirror circuit 652_L starts working, stop to provide reference current Is to input stage 652_Hin.
Be provided to the previous stage drive signal P30_L of current mirror circuit 652_L as electric current efferent 632_L from percent of pass adjuster 630; The starting point from the trailing edge of output pulse Pout arrive to load voltage Vout supply voltage V2 during (the practice; In power operation) reference current Is is offered input stage 652_Lin reliably, and before upside current mirror circuit 652_H starts working, stop to provide reference current Is to input stage 652_Lin.
The variation characteristic of output pulse Pout; Promptly; Load voltage Vout is limited the drive current Io that offers load 609 (source electric current I o and absorption current Io); Drive current Io is limiting from the electric current efferent 632_H of percent of pass adjuster 630 and the reference current Is (absorption current Is and source electric current I s) of 632_L output, and reference current Is is limited percent of pass control signal P74.In feedback control procedure, the variation characteristic of load voltage Vout (percent of pass) changes through regulating percent of pass control signal P74.
Therefore the drive circuit that is used to drive the condensance load of Figure 26 make drive signal (load voltage signal) have constant delay and change with constant gradient, and no matter the variation and the environment change of load capacitance and drive characteristic.Even output timing is confirmed as the requirement of satisfying load 609 in the systems technology requirement, drive waveforms also has the repeatability of height, and the error in the specification requirement scope of retardation and percent of pass is minimum.
The load driver of inductive reactance load
Figure 28 is the block diagram of load driver 650 of an instance of the driving pulse 600 of Figure 23.Load driver 650 drives the load 609 with inductive reactance.Figure 29 is the sequential chart of operation that the pulse driver 600 of Figure 28 is shown.
The drive circuit that is used to drive the load 609 with inductive reactance is the voltage follower circuit of driven load 609, and the load 609 that has condensance with current drives is opposite.Percent of pass adjuster 630 is designed to load driver 650 the previous stage drive signal P30 that is suitable for being undertaken by load driver 650 driven is provided.
More particularly, percent of pass adjuster 630 comprises voltage efferent 633_H and 633_L, is used to export previous stage drive signal P30_H and P30_L complimentary to one another, the reference voltage Vs of the rising edge of the definite output of representative pulse Pout or the gradient of trailing edge.
Can be provided for applying voltage V1 and to terminal 601, thereby constant current I1 is provided the circuit to constant voltage output circuit 653_H.Can be provided for applying voltage V2 and thereby constant current I2 is provided the circuit to constant voltage output circuit 653_L to terminal 602.
Can voltage adder 657 be arranged between the output stage 653_Lout of output stage 653_Hout and constant voltage output circuit 653_L of constant voltage output circuit 653_H.Voltage adder 657 with upside voltage and the addition of downside voltage and with voltage be provided to terminal 604.The input stage 653_Hin of constant voltage output circuit 653_H is connected to the voltage efferent 633_H of percent of pass adjuster 630.The input stage 653_Lin of constant voltage output circuit 653_L is connected to the voltage efferent 633_L of percent of pass adjuster 630.
Load current detector 658 is arranged between load driver 650 and the load 609.Adopt load current detector 658, the load driving electric current between drive pulse waveform shaping controller 670 monitoring load drivers 650 and the terminal 604.Therefore drive pulse waveform shaping controller 670 is carried out FEEDBACK CONTROL, makes that the positive transition characteristic (for example exporting the time of delay and the percent of pass of pulse Pout with respect to input pulse Pin on the terminal 604) in transition process converges the target transition characteristic.
Load current detector 658 is sent to drive pulse waveform shaping controller 670 in response to the load driving electric current with detected signal simply.Shown in the functional block diagram of Figure 28; Load current detector 658 can be carried out a kind of in the several different methods that comprises following method: Current Transformer directly detects electric current, perhaps adopts the current-voltage mapping function to insert current sensing resistor in the line and detects the voltage at resistor two ends.If detect electric current itself, drive pulse waveform shaping controller 670 becomes voltage signal with the current conversion that is detected.
If vertical driver is made up of integrated circuit (IC), in IC, be difficult to comprise current transformer so.It is very difficult that the circuit that all are relevant is included among the IC.In fact, current transformer is arranged between terminal 604 and the load 609, then the signal that is detected is offered the drive pulse waveform shaping controller 670 among the IC.If adopt, current sensing resistor can be inserted between voltage adder 657 and the terminal 604, and all relevant circuits can be included among the IC.
Constant voltage output circuit 653_H and 653_L, opposite with current mirror circuit 652_H and 652_L, input voltage and the constant number of input stage 653_Hin and 653_Lin multiplied each other, export the voltage of gained then respectively from output stage 653_Hout and 653_Lout.As long as can realize this function, any circuit setting all is fine.
Adopt this set, percent of pass adjuster 630 is to load driver 650 output previous stage drive signal P30_H and P30_L, and previous stage drive signal P30_H and P30_L represent reference voltage Vs and confirm the rising edge of output pulse Pout and the gradient of trailing edge.When duplicating voltage, the load driver of forming by upside and downside constant voltage output circuit 653_H and 653_L 650, each reference voltage Vs and constant multiply each other (xNH and xNL) in rising edge that will produce by percent of pass adjuster 630 and the trailing edge.Then output voltage V out is offered the load 609 with inductive reactance.
In fact, upside constant voltage outputting circuit 653_H be load 609 provide output voltage V out_H (=+ Vo) (source operation), and downside constant voltage outputting circuit 653_L to be load 609 provide output voltage V out_L (=-Vo) (absorb operation).
The integration of output voltage V out through will offering load 609 obtains the load current Iout that produces at terminal 604 divided by the inductance value of load 609.If between tour shown in Figure 29, constant voltage is applied to the load 609 with inductive reactance continuously, load current Iout linear change reaches up to load current Iout till the source current I2 of source current I1 or constant voltage output circuit 653_L of constant voltage output circuit 653_H.
When load current Iout reached source current I1, the output stage 653_Hout of upside constant voltage outputting circuit 653_H lost its constant voltage characteristic, and was connected to source current I1 through its equivalent resistance.Therefore load current Iout is fixed as source current I1.On the contrary, if load current Iout reaches source current I2, the output stage 653_Lout of constant voltage outputting circuit 653_L loses its constant voltage characteristic, and is connected to source current I2 through its equivalent resistance.Therefore load current Iout is fixed as source current I2.
As the previous stage drive signal P30_H that treats to offer constant voltage outputting circuit 653_H from the voltage efferent 633_H of percent of pass adjuster 630; Any voltage all is fine; As long as reach source current I1 (in fact up to load current Iout from the starting point of the rising edge of output pulse Pout; Absorb operation) till, reference voltage Vs is provided to input stage 653_Hin reliably, and before downside constant voltage outputting circuit 653_L starts working, stops to provide reference voltage Vs to input stage 653_Hin.
As the previous stage drive signal P30_L that treats to offer constant voltage outputting circuit 653_L from the voltage efferent 633_L of percent of pass adjuster 630; As long as reach source current I2 (in fact up to load current Iout from the starting point of the trailing edge of output pulse Pout; The source operation) till; Reference voltage Vs offers input stage 653_Lin reliably; And before upside constant voltage outputting circuit 653_H starts working, stop to provide reference voltage Vs to input stage 653_Lin, so any voltage all is fine.
Therefore the drive circuit that is used to drive the inductive reactance load of Figure 28 makes drive signal (load current signal) have constant delay and changes with constant gradient, and no matter the variation and the environmental change of load inductance and drive characteristic.Even output timing is confirmed as the requirement of satisfying load 609 (for example motor windings) in the systems technology requirement, drive waveforms also has the repeatability of height, and the error in the specification requirement scope of retardation and percent of pass is minimum.
The structure of phase delay adjustment device and percent of pass adjuster
Figure 30 mainly shows the phase delay adjustment device 610 and percent of pass adjuster 630 of the pulse driver 600 of Figure 23.Figure 31 is the sequential chart of operation that the pulse driver 600 of Figure 30 is shown.
Shown in figure 31, through delayed clock is counted CKD_H (=N1) (that is, N1/fCLK) obtain rise edge delay amount tpdr (tpdr1 among Figure 31) divided by the frequency f CLK of clock signal C K.Through delayed clock is counted CKD_L (=N2) (that is, N2/fCLK) obtain trailing edge retardation tpdf (tpdf1 among Figure 31) divided by the frequency f CLK of clock signal C K.Because retardation through regulating such as the such digital value of clock count, therefore realizes regulating easily.
The high attitude of pulse delay circuit 612 output effectively (active high) level controling signal P10_H (=Vs1) and with the effective control signal P10_L of high attitude of control signal P10_H logical inversion (=Vs1).Control signal P10_H rises at the point from the rise edge delay retardation tpdr of input pulse Pin, and the point that postpones retardation tpdf at the trailing edge from input pulse Pin descends.
Delayed clock counter register 614 can provide delayed clock counting CKD_H and CKD_L, for example the register initial set value CKD_Hini and the CKD_Lini of inside or external setting-up of setting continuously for pulse delay circuit 612.Perhaps, delayed clock counting CKD_H and the CKD_L retardation control signal P72 that can respond from the phase delay controller 672 of drive pulse waveform shaping controller 670 dynamically regulates.Register initial set value CKD_Hini and CKD_Lini can be stored in perhaps can be from external setting-up on the delayed clock counter register 614.
Term " dynamically " expression delayed clock counting can be depending on the testing result of the retardation (actual measured value or estimated value) of the relative input pulse Pin of actual output pulse Pout on the terminal 604.Phase delay controller 672 adopts retardation control signal P72 to increase or reduce delayed clock counting CKD_H and CKD_L, makes the actual amount remain target retard amount continuously.
In feedback control procedure, on such as the digital value of clock count, adjust retardation.Because the control information of control phase delay modulator 610 is handled with numerical data, regulate having become easily.
Percent of pass adjuster 630 comprises digital-to-analogue (DA) transducer 634_H and the switch 636_H that is used for rising edge control, and the DA transducer 634_L and the switch 636_L that are used for trailing edge control.
Percent of pass adjuster 630 also comprises DAC data register 638, is used for reference data DAC_H and the DAC_L of the reference current Is of area definition DA transducer 634_H and 634_L.DAC data register 638 is set the reference data DAC_H and the DAC_L of storage on DA transducer 634_H and 634_L.DA transducer 634_H and 634_L produce corresponding to the reference current of setting reference data DAC_H and DAC_L (Is of source and the Is that absorbs side).Source can be identical or different with the absolute value that absorbs the reference current on the side.
The electric current efferent 632_H (not shown among Figure 30) of Figure 26 is arranged in the output stage of DA transducer 634_H.The electric current efferent 632_L (not shown among Figure 30) of Figure 26 is arranged in the output stage of DA transducer 634_L.
DAC data register 638 can be DA transducer 634_H and 634_L provides setting reference data DAC_H and DAC_L such as register initial set value DAC_Hini and DAC_Lini.Reference data DAC_H and DAC_L can dynamically regulate in response to the percent of pass control signal P74 from the percent of pass controller 674 in the drive pulse waveform shaping controller 670.Register initial set value DAC_Hini and DAC_Lini can be stored on the DAC data register 638 in inside in advance or can set from the outside.
Term " dynamically " expression delayed clock counting can be depending on the testing result of the percent of pass of the relative input pulse Pin of actual output pulse Pout on the terminal 604.Percent of pass controller 674 increases in response to percent of pass control signal P74 or reduces reference data DAC_H and DAC_L, makes actual percent of pass remain desired value.
Output pulse Pout; Promptly; The variation characteristic of load voltage Vout is limited the drive current Io that offers load 609 (source electric current I o and absorption current Io); Drive current Io is limited the reference current Is (absorption current Is and source electric current I s) from DA transducer 634_H and 634_L output, and reference current Is is limited reference data DAC_H and DAC_L.The variation characteristic of load voltage Vout (percent of pass) depends on that drive current Io changes.
In feedback control procedure, offer drive current Io in the transition process of load voltage of load 609 in digital value adjusted such as the DAC data.Therefore regulated the percent of pass of load voltage Vout.Because the control information of control percent of pass adjuster 630 is handled with numerical data, regulates and becomes easy.
Only when switch 636_H and 636_L conducting, percent of pass adjuster 630 is that current mirror circuit 652_H and the 652_L in the corresponding load driver 650 provides previous stage drive signal P30_H and the P30_L (being reference current Is) that is produced by DA transducer 634_H and 634_L here.
DA transducer 634_H and 634_L have enough resolving powers (definition); This resolving power has covered the variation of characteristic of driving force and the load 609 of load driver 650; The variation that changes in the manufacture process owing to load 609 changes the environmental change of that kind as the variation in the manufacture process of the driving element of the output stage of load driver 650 and such as temperature change and humidity.More preferably, DA transducer 634_H and 634_L have the resolving power compatible with various load 609.
The delay tpdr1 that pulse delay circuit 612 adopts input pulse Pin rising edges with control signal P10_H (=Vs1) drive for high attitude effective.Output voltage V out on the terminal 604 rises in response to the high level of control signal P10_H.
When from the input pulse P10_H of pulse delay circuit 612 (=Vs1) change into when high from low; Switch 636_H conducting in the percent of pass adjuster 630, the previous stage drive signal P30_H that limits the reference current Is that is produced by DA transducer 634_H is provided for the current mirror circuit 652_H (absorbing operation) in the load driver 650.
Current mirror circuit 652H provides drive current Io to the load with condensance 609, and this drive current Io obtains through increasing the reference current Is (becoming NH doubly) that is represented by previous stage drive signal P30_H.Load voltage Vout changes high level with constant percent of pass into from low level so.When load voltage Vout reached supply voltage V1, even reference current Is offers the input stage 652_Hin of current mirror circuit 652_H continuously, the input stage 652_Hout of current mirror circuit 652_H also can lose its constant current characteristic.Load 609 is connected to supply voltage V1 through its equivalent resistance, and load voltage Vout is fixed as supply voltage V1.
When rising after the input pulse Pin, carry out aforesaid operations with opposite mode.More particularly, pulse delay circuit 612 adopt from the retardation tpdf1 of the trailing edge of input pulse Pin with control signal P10_H (=Vs1) drive to low, simultaneously with control signal P10_L drive for high attitude effective.Correspondingly, the load voltage Vout on the terminal 604 rises to the high level of control signal P10_L.
When from the input pulse Pin_L of pulse delay circuit 612 (=Vs2) change when high switch 636_L conducting in the percent of pass adjuster 630 into from low.Qualification is provided for the current mirror circuit 652_L (source operation) in the load driver 650 by the previous stage drive signal P30_L of the reference current Is that DA transducer 634_L produces.
Current mirror circuit 652_L is that the load 609 with condensance provides drive current Io, and drive current Io obtains through the reference current Is (to NH doubly) that increases by previous stage drive signal P30_L indication.Like this, load voltage Vout changes low level with constant percent of pass into from high level.When load voltage Vout reached supply voltage V2, even reference current Is offers the output stage 652_Lin among the current mirror circuit 652_L continuously, the output stage 652_Lout among the current mirror circuit 652_L also can lose its constant current characteristic.Load 609 is connected to supply voltage V2 through its equivalent resistance, and load voltage Vout is fixed as supply voltage V2.
The distortion of percent of pass adjuster
Figure 32 mainly shows phase delay adjustment device 610 and the distortion of percent of pass adjuster 630 (Figure 30) of the pulse driver 600 of Figure 23.
The difference of distortion shown in Figure 32 and the pulse driver of Figure 30 600 is: the DA transducer 634 in the percent of pass adjuster 630 allows to be undertaken by DA transducer 634A and 634B the two steps joint of coarse adjustment and fine setting.
DA transducer 634A_H and the 634A_L that is used for coarse adjustment produces corresponding to the rough reference current Is_Coarse (Is_Hcrs and Is_Lcrs) from the driving force coarse adjustment set point DAC_Coarse (rough DAC data DAC_Hcrs and DAC_Lcrs) of external setting-up, and this rough reference current Is_Coarse (Is_Hcrs and Is_Lcrs) is offered DA transducer 634B_H and the 634B_L that is used to finely tune.Rough DAC data do not receive the influence (not controlled by it) from the percent of pass control signal P74 of percent of pass controller 674; DA transducer 634A_H and 634A_L produce the rough reference current Is_Coarse in response to driving force coarse adjustment set point, and regardless of the percent of pass control signal P74 from percent of pass controller 674.
DA transducer 634B_H that is used to finely tune and 634B_L produce the reference current of being set by DAC data register 638 (Is of source and the Is that absorbs side) based on percent of pass control signal P74 in reference to the rough reference current Is_Coarse that is produced by DA transducer 634A_H and 634A_L.In this case, reference data DAC_H is corresponding with the driving force fine setting set point DAC_Fine in response to driving force coarse adjustment set point DAC_Coarse with DAC_L.
When producing reference current Is, can adopt a kind of in multiplication method and the addition method with reference to rough reference current Is_Coarse.In multiplication method, the rough reference current Is_Coarse that is produced by DA transducer 634A_H and 634A_L is used as reference current, through regulating amplification factor generation reference current Is according to reference data DAC_H and DAC_L.In addition method; Meticulous reference current Is_Fine (Is_Hfine and Is_Lfine) corresponding to reference data DAC_H and DAC_L produces at DA transducer 634B_H and 634BA_L, and meticulous reference current Is_Fine is added on the rough reference current Is_Coarse that is produced by DA transducer 634A_H and 634A_L.
Be to adopt a kind of or two kinds of methods of employing in two kinds of methods to confirm based on driving force and variation tendency.Although there is some exception, multiplication method provides wideer dynamic range than addition method, and DA transducer 634B_H and 634B_L preferably have the circuit setting that is used for multiplication method.
No matter multiplication method or addition method; Rough reference current Is_Coarse does not receive the influence of percent of pass control signal P74 in feedback control procedure, the percent of pass of load voltage Vout is mainly regulated by the DA transducer 634B_H and the 634B_L that are used to finely tune.
Even single-stage DA transducer 634 also has enough resolving powers; This resolving power has covered the variation of the driving force and load 609 characteristics of load driver 650; Owing to the variation that changes in load 609 manufacture processes; As the variation in the manufacture process of the driving element of the output stage of load driver 650, and the environmental change that changes that kind such as temperature change and humidity.More preferably, DA transducer 634_H and 634_L have the resolving power compatible with various load 609.
Yet; In fact; With variation in the manufacture process of load 609, as the variation in the manufacture process of the driving element of the output stage of load driver 650 and resemble temperature change and change such environmental change with humidity and compare, the variation of various loads 609 is bigger.The use of single-stage DA transducer 634 is owing to its unpractical resolving power becomes unrealistic.
With regard to system design, the specification requirement of the characteristic of the load 609 in the common known use (comprising input equivalent capacity, input equivalent inductance and driving frequency).Use the DA transducer 634A that is used for coarse adjustment if consider said characteristic, can realize the target drives ability so.
If the DA transducer 634B that will be used for finely tuning is designed to carry out FEEDBACK CONTROL to deal with the variation of use, percent of pass can adopt actual resolving power dynamically to regulate so.More particularly; Because be the Driven by Plan ability that the DA transducer 634A that is used for coarse adjustment sets, the driving force of load 609 (for example importing equivalent capacity) and characteristic maybe be owing to variation and variations in temperature in all unpredictable parasitic capacitance of design phase, manufacture process change.At this moment, have such possibility, that is, the percent of pass that drives output can not satisfy specification.But through the DA transducer 634B that is used to finely tune with 674 controls of percent of pass controller, the gradient of scalable output makes and can satisfy output percent of pass specification.
The structure of drive pulse waveform shaping controller
Figure 33 mainly shows the drive pulse waveform shaping controller 670 of the pulse driver 600 of Figure 23.Figure 34 is the sequential chart of operation that the pulse driver 600 of Figure 33 is shown.
Here phase delay adjustment device 610 is identical with the counterpart of Figure 32 with percent of pass adjuster 630.The counterpart that is used to drive the load 609 with condensance of load driver 650 and Figure 26, perhaps the counterpart that is used to drive the load 609 with inductive reactance of Figure 28 is identical.The above-mentioned discussion of phase delay adjustment device 610 and percent of pass adjuster 630 also is adaptable equally.
Drive pulse waveform shaping controller 670 comprises two comparators 682 and 684 and the resolver 686 that forms phase delay controller 672 and percent of pass controller 674.Two comparators 682 and 684 and the retardation controlled function of resolver 686 partly constitute phase delay controller 672.Two comparators 682 and 684 and the percent of pass controlled function of resolver 686 partly constitute percent of pass controller 674.Perhaps, two comparators 682 and 684 and resolver 686 can be arranged apart from phase delay controller 672 and percent of pass controller 674.
Be input to another input of comparator 682 corresponding to first reference voltage Vref 1 of the high level voltage of the output pulse Pout on the terminal 604 and the predetermined voltage between the low level voltage.Corresponding to second reference voltage Vref 2 of high level voltage and the predetermined voltage between the low level voltage of the output pulse Pout on the terminal 604 (＞Vref1) be input to another input of comparator 684.
Shown in Figure 34 A, two reference voltage Vref 1 and Vref2 are set at the appropriate voltage between the voltage of being taked by load voltage Vout (going up supply voltage V1 and following supply voltage V2).For example, from about 1/3 level of the voltage of V1 swing, second reference voltage Vref 2 be about 2/3 level of the voltage swung from V1 between V1 and the V2 to first reference voltage Vref 1 between V1 and V2.
In the comparator 682 and 684 of constructing like this, voltage comparator 682A and 684A compare with Vref2 reference voltage Vref 1 with the ramp portion of output pulse Pout.If becoming, two voltages are equal to each other, so voltage comparator 682 and 684 comparator output anti-phase.
As what count to get is the counting Nsr2 of identification electrical voltage point Tsr2 (corresponding to reference voltage Vref 1); The counting Ner2 of electrical voltage point Ter2 (corresponding to reference voltage Vref 2) in the rising edge process of identification output pulse Pout; The counting Nsf2 of identification electrical voltage point Tsf2 (corresponding to reference voltage Vref 2), and the counting Nef2 of the electrical voltage point Tef2 (corresponding to reference voltage Vref 1) in the trailing edge process of identification output pulse Pout.
What measure by this way is from the rising edge of input pulse Pin or trailing edge up to the output anti-phase of two comparator 682A and 684A (promptly; Reach among reference voltage Vref 1 and the Vref2 each up to the load voltage Vout that produces by load 609 response input pulse Pin) time period in clock count (count Nsr2; Ner2, Nsf2 and Nef2).Comparator 682 and 684 provides the measured resolver 686 that count down to.
The relation of each counting Nsr2, Ner2, Nsf2 and the Nef2 of the input pulse Pin that resolver 686 is calculated based on comparator 682 and 684; Utilize the clock cycle to calculate, and between reference voltage Vref 1 and Vref2, change the required time along the retardation of the predetermined voltage point on the slope of exporting pulse Pout (load voltage Vout).Therefore resolver 686 has been discerned retardation and the percent of pass of initiatively exporting the relative input pulse Pin of pulse Pout; Adopt retardation control signal P72 to control phase delay adjustment device 610; Adopt percent of pass control signal P74 to control percent of pass adjuster 630, make retardation and percent of pass can converge its desired value.
Shown in Figure 34 B, the delayed clock that the mean value of counting Nsr2 and Ser2 becomes the time of reference voltage Vref 1 and intermediate voltage point Vref2 of representative from the rising edge of input pulse Pin to output pulse Pout count CKD_H (=NH).Through delayed clock being counted the frequency f CLK (NH/fCLK) of CKD_H, and obtain retardation tpdr2 divided by clock signal C K.
The delayed clock that the mean value of counting Nsf2 and Nef2 becomes the time of reference voltage Vref 1 and intermediate voltage point Vref2 of representative from the trailing edge of input pulse Pin to output pulse Pout count CKD_L (=NL).Through delayed clock being counted the frequency f CLK (NL/fCLK) of CKD_L, obtain retardation tpdf2 divided by clock signal C K.
Difference between counting Nsr2 and the Ner2 is represented the percent of pass SRr2 at rising edge place, and the difference between counting Nsf2 and the Nef2 is represented the percent of pass SRf2 of falling edge.
Can adopt counting Nsr2 and Ner2 shown in Figure 34 C, estimate that expression is along the upside supply voltage V1 of the line stretcher of two reference voltage Vref 1 of representing qualification percent of pass SRr2 and Vref2 and the counting of downside supply voltage V2.In other words, can estimate to discern the counting Nsr1 of rising edge starting point Tsr1 and the counting Ner1 of identification rising edge end point Ter1.Counting Nsr1 become the time of the rising edge starting point Tsr1 of expression from the rising edge of input pulse Pin to output pulse Pout delayed clock counting CKD_H (=N1).Through delayed clock being counted the frequency f CLK (N1/fCLK) of CKD_H, obtain the retardation tpdr1 at rising edge place divided by clock signal C K.
Shown in Figure 34 C, expression limits the upside supply voltage V1 and the counting of downside supply voltage V2 of the line stretcher between two reference voltage Vref 1 and Vref2 2 of percent of pass SRf2 along representative, can adopt to count Nsf2 and Nef2 estimates.In other words, can estimate to discern the counting Nsf1 of rising edge starting point Tsf1 and the counting Nef1 of identification rising edge end point Tef1.Counting Nsf1 become the time of the trailing edge starting point Tsf1 of representative from the trailing edge of input pulse Pin to output pulse Pout delayed clock counting CKD_L (=N2).Through delayed clock being counted the frequency f CLK (N2/fCLK) of CKD_L, obtain the retardation tpdf1 of falling edge divided by clock signal C K.
The control information of control phase delay modulator 610 and percent of pass adjuster 630 is handled as numerical data.In addition, initiatively the conversion characteristic of (activated) output pulse Pout also carries out digital measurement or numeral estimation.Because adopt numerical data to handle whole feedback control system, measurement and adjusting have become easily.
Be applied to first kind of configuration of vertical driver
Figure 35 shows the first kind of configuration of vertical driver 50 that above-mentioned pulse driver 600 is applied to the vertical transfer electrode 12 of driven CCD solid-state image pickup device 10.Because load driver 650 drives the vertical transfer electrode 12 of condensance this moment, adopted the structure of Figure 26.Phase delay adjustment device 610 and percent of pass adjuster 630 are those among Figure 30.
Shown in figure 35; Image pick-up device 1 comprises CCD solid-state image pickup device 10; Be used to drive vertical transitions driver 7, be used for driving horizontal transfer driver 8 as a plurality of horizontal transfer registers 14 of the condensance of CCD solid-state image pickup device 10 as a plurality of vertical transfer electrodes 12 of condensance.
Shown in figure 35, the vertical transfer electrode 12_1 that is arranged in the CCD solid-state image pickup device 10 is represented to C12_z (for example, each arrives in the scope of 1000pF 100) by equivalent input capacitance C12_1 respectively to 12_z.See that from the angle of vertical driver 700 CCD solid-state image pickup device 10 is condensance loads.
Equivalent input capacitance C12 only shows an electrode in Fig. 4 A.In more detail, formed the series circuit of equivalent input capacitance 12 with cloth line resistance (tens ohm to hundreds of ohm) and earth resistance (tens ohm).
Image pick-up device 1 comprises the timing generator 810 of the pulse signal of each vertical driver 700 that is used for producing control vertical transitions driver 7 and horizontal transfer driver 8; Be used to carry out AFE(analog front end) (AFE) portion 820 of analog, and video signal preprocessor 830.Video signal preprocessor 830 comprises that video calculates and processing unit 832; This video calculates and processing unit 832 comprises the digital signal processor (DSP) that is used for picks up data is carried out predetermined Video processing; Be used on predetermined memory, storing the video recorder 834 of the video that picks up by CCD solid-state image pickup device 10, and the video display 836 that is used to show the video that picks up by CCD solid-state image pickup device 10.
Figure 35 shows the most appropriate instance of image pick-up device 1 (ccd image picking up system).The structure of image pick-up device 1 can be depending on semiconductor technology requirement and whole camera designing requirement and change.The present invention is not limited to this instance.All functions element shown in Figure 35 can comprise or be not included in the image pick-up device 1.Partial function element (for example, be used for monitor video display 836) can remove from system.Can in these function element, freely arrange the function response.For example, horizontal transfer driver 8 can be integrated in the unit with timing generator 810.
Image pick-up device 1 also comprises mechanism---the shutter of storage signal electric charge in the Sensor section (charge generators) that is used for stopping at CCD solid-state image pickup device 10; The lens that comprise the optical imagery that is used to collect object are caught the optical system of lens with the image of the aperture diaphragm with the light quantity of regulating optical imagery, and the controller (although not shown these elements) that is used to control entire image pick device 1.Timing generator 810 can comprise controller.
This controller comprises central processing unit (CPU).CPU reads the control program that is stored on disk, CD, magneto optical disk or the semiconductor memory through the Control Driver (not shown), and comes overall control image pick-up device 1 according to the instruction of the control program that reads or user's input.
This controller comprises the exposure control unit that is used to control shutter, and the brightness of image that keeps being sent to video signal preprocessor 830 is to the aperture diaphragm of optimum value, and the user through its input shutter regularly and the operating unit of other order.
CPU is operatively connected to the timing generator 810 of the bus of image pick-up device 1, video signal preprocessor 830 and exposure control unit.Timing generator 810 and video signal preprocessor 830 receiving system clocks and from other control signal of CPU.
In response to the pulse signal that provides from timing generator 810; AFE(analog front end) portion 820 carries out predetermined analog; For example the picture signal of catching of 16 outputs of the output amplifier from CCD solid-state image pickup device 10 is carried out the two samplings of association; Convert handled analog picture signal to numerical data, the numerical data that gained is provided is to video signal preprocessor 830.
Video calculates and processing unit 832 comprises digital signal processor (DSP), is used for the Digital Video Processing that view data is scheduled to of catching from 820 inputs of AFE(analog front end) portion.
The vertical driver 700 that is used for vertical transfer electrode 12 has the pulse driver 600 essentially identical structures with Figure 33.Vertical driver 700 comprises the phase delay adjustment device 710 corresponding to phase delay adjustment device 610; Percent of pass adjuster 730 corresponding to percent of pass adjuster 630; Load driver 750 corresponding to load driver 650; Corresponding to the phase delay controller 772 of phase delay controller 672, and corresponding to the percent of pass controller 774 of percent of pass controller 674.Drive pulse waveform shaping controller 770 comprises phase delay controller 772 and percent of pass controller 774.
Phase delay adjustment device 710, percent of pass adjuster 730 and load driver 750 constitute waveform shaping processor 760, are used for that the input pulse signal is carried out predetermined waveform shaping and handle.
With relevant with the transformation the VL to the voltage VM of Φ Vz from the vertical transitions pulse Φ V1 of vertical driver 700 outputs, it is relevant with the transformation between the VH to the voltage VM of Φ Vz with vertical transitions pulse Φ V1 to read clock ROG to Vz for vertical transfer clock V1.
When vertical transfer electrode in this set 12 is driven by the vertical transfer clock of out of phase; The pulse output signals of vertical transfer electrode 12 that is in its active state is monitored; And the execution FEEDBACK CONTROL makes each output pulse signal have predetermined conversion characteristic.Even the variation and the environmental change of the variation of the load characteristic (especially equivalent input capacitance C12) of the vertical transfer electrode 12 of existence from the element to the element, the drive characteristic of the load driver from the element to the element 750 have also obtained constant conversion characteristic continuously.
With the mode that variation in the manufacture process that does not receive capacitive load and environmental change influence, carry out appropriate driving continuously.Because it is almost nil that the variation of the conversion characteristic of driving output pulse is reduced to, and therefore can carry out high-speed driving.Change if in conversion characteristic, exist, need drive with the allowance of considering these variations.Owing to can carry out driving almost to be reduced to zero allowance, therefore can carry out high-speed driving.
Vertical transfer clock V1 to Vz, read clock ROG and vertical transitions pulse Φ V1 and only illustrate with schematic purpose to the logical relation of voltage level VH, VM and the VL of Φ Vz.The present invention is not limited to this logical relation, can set any logical relation according to system requirements.
In being provided with of vertical driver 700; Above-mentioned pulse driver 600 is used for producing the low speed pulse signal based on the vertical transfer clock V1 that offers terminal 703 to Vz, and this low speed pulse signal has variation characteristic slowly at vertical transitions pulse Φ V1 between the low level voltage VL of Φ Vz and intermediate level voltage VM.The switch 708 that is used for high level voltage VH directly causes the transformation between intermediate level voltage VM and the high level voltage VH based on reading clock ROG, and this set needn't provide the pulse of the low speed with slow variation characteristic.
In the characteristic and driving method of CCD solid-state image pickup device 10, the mild slope of the transformation between transformation between intermediate level voltage VM and the high level voltage VH and low level voltage VL and the high level voltage VH can adopt the structure of pulse driver 600 to realize.
Shown in figure 35, the same vertical driver 700 that provides in the semiconducter IC is used for individual drive vertical transfer electrode 12, each terminal 707 is provided with reading clock ROG.Not all vertical transfer electrode 12 all need read clock ROG, and in fact, timing generator 810 does not read clock ROG for all vertical drivers 700 provide on its terminal 707.
For example, in online the CCD solid-state image pickup device 10, V1 and the V3 of four phase place vertical transfer clock V1-V4 and read clock ROG and be combined to form vertical transitions pulse Φ V1 and the Φ V3 that adopts among three level VL, VM and the VH.Vertical transitions pulse Φ V1 and Φ V3 not only are used for the vertical transitions operation of original plan, and are used for signal charge and read.In all pixel reading out type CCD solid-state image pickup devices 10, the V1 among three phase place vertical transfer clock V1-V3 with read clock ROG and be combined to form one the vertical transitions pulse Φ V that adopts three level VL, VM and VH.Vertical transitions pulse Φ V1 not only is used for the vertical transitions operation of original plan, and is used for the signal charge read operation.
Be applied to second kind of structure of vertical driver
Figure 36 shows the second kind of structure that above-mentioned pulse driver 600 is applied to the vertical driver 50 of the vertical transfer electrode 12 in the driven CCD solid-state image pickup device 10.In second kind of structure, the pulse driver 600 of the vertical driver 700 in first kind of structure of Figure 35 is those shown in that rather than the Figure 30 shown in Figure 33. Comprise comparator 782 and 784 and resolver 786 corresponding to the drive pulse waveform shaping controller 770 of drive pulse waveform shaping controller 670. Comparator 782 and 784 is simplified in Figure 36.
Shown in figure 36, operation control 790 can be installed to vertical transitions driver 7 outsides.Perhaps, operation control 790 can be installed to vertical transitions driver 7 inside.At this moment, if adopt the single encapsulation IC that comprises each vertical driver 700, operation control 790 is included among the identical IC so.Provide in independent IC if drive the vertical driver 700 of vertical transfer electrode 12, operation control 790 is installed in each vertical driver 700 so.In the selectively actuatable controller 790 one.
In the standard pickup mode; Image pick-up device 1 adopts drive pulse waveform shaping controller 770 to stop FEEDBACK CONTROL through the valid pixel at CCD solid-state image pickup device 10 in the cycle; And only in the vertical blanking cycle that does not directly appear on the screen, adopt drive pulse waveform shaping controller 770 to start FEEDBACK CONTROL, make that the noise contribution that appears in the image is minimum.So image pick-up device 1 control lag amount and percent of pass, the feasible positive transition characteristic that drives the vertical transitions pulse of vertical transfer electrode 12 satisfies specification requirement.
When switching pickup mode, system stabilityization can be utilized the time of at least one screen.In cycle, start the FEEDBACK CONTROL that adopts drive pulse waveform shaping controller 770 at the valid pixel of a screen.Regulated time of delay and percent of pass like this, the feasible positive transition characteristic that drives the vertical transitions pulse of vertical transfer electrode 12 satisfies specification requirement.Therefore quick-recovery stable state soon.
Except that video synchronization signal, the signal that will be used for control system offers and is used to the vertical driver 700 that calculates and confirm.System flexibly is provided easily.
Be applied to the third structure (the first circuit technology of sharing of a plurality of loads) of vertical driver
Figure 37 shows the third structure that above-mentioned pulse driver 600 is applied to the vertical driver 50 of the vertical transfer electrode 12 in the driven CCD solid-state image pickup device 10.The same with first kind of structure of Figure 35, the third structure has comprised the structure of Figure 30 as pulse driver 600.The third structure adopts the first kind of technology that reduces hardware through the partial function of sharing a plurality of vertical transfer electrodes 12.
First kind of technology of sharing is based on such theory: if vertical transfer electrode 12 has identical equivalent input capacitance C12; With the logic input that drives a vertical transfer electrode 12 with to be used to drive the logic input of another vertical transfer electrode 12 relevant, can make that the regulated value of retardation and percent of pass of logic input is equal.Drive pulse waveform shaping controller 770 in the variation characteristic (percent of pass) of the retardation of the relative input pulse Pin of monitoring output pulse Pout and output pulse Pout, control phase delay modulator 710 and percent of pass adjuster 730.This drive pulse waveform shaping controller 770 can be shared by a plurality of vertical transfer electrodes with same equivalent input capacitance C12 12.
More particularly; In the vertical transitions driver 7A that carries out first kind of technology of sharing, the vertical transfer electrode 12 with same equivalent input capacitance C12 in a plurality of vertical transfer electrodes 12 in being used in CCD solid-state image pickup device 10 can be shared the structure corresponding to pulse driver 600 except that load driver 650.
More particularly; In the vertical driver 700A of vertical transitions driver 7A; 770 monitorings of drive pulse waveform shaping controller have the pulse output signals on one of a plurality of vertical transfer electrodes 12 of identical characteristics; Control the waveform shaping processor 760 corresponding to these a plurality of vertical transfer electrodes 12 then, feasible pulse output signals with a plurality of vertical transfer electrodes 12 of identical characteristics has identical conversion characteristic.
For example; Although adopted independent load driver 750A and the 750B that are connected respectively to two vertical transfer electrodes 12 with same equivalent input capacitance C12; But other element, for example phase delay adjustment device 710, percent of pass adjuster 730 and drive pulse waveform shaping controller 770 are shared by vertical transfer electrode 12.Percent of pass adjuster 730 comprises distributing switch 740A and 740B at the tie point of itself and load driver 750A and 750B, is used for distributing by the represented reference current Is of previous stage drive signal P30 from 734 outputs of DA transducer to load driver 750A and 750B.
Distributing switch 740 is used to distribute the reference current Is that is limited DA transducer 734, and said transducer 734 is used for being set to previous stage drive signal P30_Ha and the previous stage drive signal P30_Hb of P30_La and another vertical transfer electrode 12_b and the output driving force of P30_Lb of a vertical transfer electrode 12_a.
Electric current I s is assigned in two vertical transfer electrodes 12 with same capacitance.Perhaps, if adopt a plurality of vertical transfer electrodes 12, can electric current I s be distributed between the electrode of equal number so.
For example, in Fig. 1, be provided be used for four phase driven four kinds of vertical transfer electrode 12_1 to 12_4.Can expect that clock vertical transfer electrode 12_1 is driven by each four phase places vertical driver respectively to 12_4.Perhaps, each vertical transfer electrode can be divided into many lines, and every line can be driven by corresponding vertical driver.
For example, vertical transfer electrode functionally physics is divided into the first half and the Lower Half of image pick-up section 10a, and two output stages of vertical driver (corresponding to the load driver 750 here) are installed in upside and the downside of image pick-up section 10a.Upper vertical transfer electrode is driven by the upside output stage, and the downside vertical transfer electrode is driven by the downside output stage.
Because four kinds of vertical transfer electrode 12_1 are one to the line (line_a and line_b) of 12_4 originally in the case, so have only a target drives timing working.The signal that comes from single input pulse distributes between two output stages.The load capacitance of distribution target can be different.Be set at identical timing if will offer the signal (here corresponding to the previous stage drive signal P30 that gives load driver 750 to be supplied) of two lines, the driving timing after management distributes is very difficult.
The line that originally has identical figure also has identical equivalent input capacitance C12_a and C12_b.When the signal that obtains from an input pulse carries out the branch timing between the output stage of two lines, signal (corresponding to the previous stage drive signal P30 that the gives load driver 750 to be supplied) basically identical of giving output stage to be supplied.
Utilize first kind of technology of sharing; To offer pulse delay circuit 712 as the vertical transfer clock V1 that logic is imported 1a, thereby drive two line vertical transfer electrode 12_1a and the 12_1b of vertical transfer electrode 12_1 among the vertical driver 700A among the vertical transitions driver 7A.To offer switch 708 as the clock ROG that reads that logic is imported 2a (if necessary).
Vertical transitions driver 7A comprises and vertical driver 700A identical mechanism (not shown), is used to drive other vertical transfer electrode 12_2,12_3 and 12_4.
Each load voltage Vout that drive pulse waveform shaping controller 770 monitoring among the vertical driver 700A has a same equivalent input capacitance C12 (for example; Load voltage Vout1a on the vertical transfer electrode 12_1a) state of activation, and in response to logic input control lag amount and percent of pass.
The output of a line in two lines of waveform shaping signal processor 760 monitorings, that is, and the load voltage Vout1a on the vertical transfer electrode 12_1a (the perhaps load voltage Vout1b on the vertical transfer electrode 12_1b).Regulate like this, make that the load voltage Vout1a on the vertical transfer electrode 12_1a has predetermined delay amount and predetermined percent of pass in response to the vertical clock V1 as logic input 1a that provides from timing generator 810.Can regulate equally, make that the load voltage Vout1b on the vertical transfer electrode 12_1b has predetermined delay amount and predetermined percent of pass.
Because the symmetrical structure of the electrode of CCD solid-state image pickup device 10, being used to of in vertical transitions driver 7A, adopting realizes that the setting of first kind of technology of sharing is effective.Because an equivalent input capacitance C12 is designed to equal another equivalent input capacitance C12, the circuit that therefore can effectively eliminate drive pulse waveform shaping controller 670 is redundant.
Exist when having the vertical transfer electrode 12 of same equivalent input capacitance C12 at the vertical driver 7A that is used for carrying out first kind of technology of sharing, not only drive pulse waveform shaping controller 770 but also phase delay adjustment device 710 are all shared with percent of pass adjuster 730.Sharable circuit is not limited to these elements.Can various modifications be applied to system configuration and the structure of CCD solid-state image pickup device 10 and the technology of sharing in the characteristic of image pick-up device 1.This distortion is described below.
The modification of the third structure of vertical driver
When the complementary drive of execution graph 6A and 6B, can use first kind of technology of sharing.770 monitorings of drive pulse waveform shaping controller appear at the pulse output signals that occurs on the line of a plurality of vertical transfer electrodes 12 with identical characteristics.770 controls of drive pulse waveform shaping controller are corresponding to the waveform shaping processor 760 of a plurality of vertical transfer electrodes 12, and feasible pulse output signals with a plurality of vertical transfer electrodes 12 of identical characteristics has identical conversion characteristic.
When type CCD solid-state image pickup device 10 between line carried out four phase driven as said with reference to figure 2, CCD solid-state image pickup device 10 comprised that four kinds of vertical transfer electrode 12_1 corresponding to each phase place are to 12_4.Ground floor vertical transfer electrode (second electrode) 12_2 and ground floor vertical transfer electrode (the 4th electrode) 12_4 are basic identical on graphics shape, and second layer vertical transfer electrode (first electrode) 12_1 and second layer vertical transfer electrode (third electrode) 12_3 are basic identical on graphics shape.The ground floor electrode is different on graphics shape with second layer electrode.The equivalent input capacitance C12_1 of vertical transfer electrode 12_1 and 12_3 and C12_3 are equal basically each other, and the equivalent input capacitance C12_2 of vertical transfer electrode 12_2 and 12_4 and C12_4 are equal basically each other.Each is not equal among equivalent input capacitance C12_2 and the C12_4 each among equivalent input capacitance C12_1 and the C12_3.
Drive with the complementary drive method if having the vertical transfer electrode 12 of same equivalent input capacitance C12, the vertical transfer electrode 12 with same equivalent input capacitance C12 is provided the vertical transitions pulse with the phase place inverse variation.For example, in vertical transitions driver 7A, one among logic input 1a (vertical transfer clock V1) and the 1b (vertical transfer clock V2) offers pulse delay circuit 612, and DA transducer 734_H and 734_L provide it to export to distributing switch 740A and 740B.Distributing switch 740A and 740B provide its output current to load driver 750A and 750B.When distributing switch 740A and 740B provided its output current to load driver 750A and 750B, current phase can be by anti-phase.
More particularly, the output of DA transducer 734_H is offered current mirror circuit 752_H and the current mirror circuit 752_L among the load driver 750B among the load driver 750A.The output of DA transducer 734_L offers current mirror circuit 752_L and the current mirror circuit 752_H among the load driver 750B among the load driver 750A.
Because this mechanism adopts identical phase delay adjustment device 710 and identical percent of pass adjuster 730 to distribute in response to reference current Is equivalent between load driver 750A that is used for a plurality of vertical transfer electrodes 12 and load driver 750B that single input pulse Pin produces.If in the complementary drive process, do not exist when changing between equivalent input capacitance C12 and another, the rising edge characteristic of two lines and trailing edge characteristic be equilibrium accurately.
Two load drivers 750, that is, load driver 750A and load driver 750B are arranged to work with two vertical transfer electrodes 12 with same equivalent input capacitance C12.Two phase-delay networks 712 can be set in phase delay adjustment device 710, that is, and phase-delay network 712A and 712B.Two DA transducers 734 can be set in percent of pass adjuster 730, that is, and DA transducer 734A and 734B, and two switches 736, that is, and switch 736A and 736B.
Being arranged on the delayed clock counting CKD_H and the common retardation control signal P72 that responds from phase delay controller 772 of CKD_L that postpone in the mask register 714 is provided with in independent pulse delay circuit 712A and 712B.The reference data DAC_H and the common percent of pass control signal P74 that responds from percent of pass controller 774 of DAC_L that are arranged in the DAC data register 738 are provided with in single DA transducer 734A and 734B.
In this modification; Drive pulse waveform shaping controller 770 among the vertical driver 700B is monitored the state of activation of a load voltage Vout (for example, the load voltage Vout1 of vertical transfer electrode 12_1) of the vertical transfer electrode 12 with same equivalent input capacitance C12.Drive pulse waveform shaping controller 770 is based on monitoring result, in response to logic input (for example, the combination of vertical transfer clock V1 and V3) control lag amount and percent of pass then.
Regulate like this, make load voltage Vout1a on the vertical transfer electrode 12_1, have predetermined delay amount and predetermined percent of pass in response to the vertical clock V1 that provides from timing generator 810 as logic input 1a.Can regulate so equally, make that the load voltage Vout1b on the vertical transfer electrode 12_3 responds the vertical clock V3 as logic input 1b that provides from timing generator 810, have predetermined delay amount and predetermined percent of pass.
Input phase is different respectively is used to the logic input 1b (vertical transfer clock V3) that drives the logic input 1a (vertical transfer clock V1) of vertical transfer electrode 12_1 and be used to drive vertical transfer electrode 12_3.Vertical transfer electrode 12_1 has identical equivalent input capacitance C12 with 12_3.In vertical transfer electrode 12_1 and 12_3, obtain phase delay adjustment amount identical and identical percent of pass with load current regulated quantity (Io regulated quantity).
In response to phase delay adjustment device 710 (more particularly, delayed clock counter register 714), the phase-delay quantity at pulse delay circuit 712A and 712B place is controlled so as to has same amount.In response to the percent of pass control signal P74 of percent of pass adjuster 730 (more particularly, DAC data register 738), the percent of pass on DA transducer 734A and the 734B is controlled to has same amount.For vertical transfer electrode 12_1 and 12_3, therefore obtained the output pulse that phase-delay quantity and percent of pass satisfy specification requirement.
The 4th kind of structure of vertical driver (second kind of circuit technology of sharing of a plurality of loads)
Figure 38 shows the 4th kind of structure that above-mentioned pulse driver 600 is applied to the vertical driver 50 of the vertical transfer electrode 12 in the driven CCD solid-state image pickup device 10.Identical with first kind of structure of Figure 35, the 4th kind of structure adopted the setting of the Figure 30 that is used for pulse driver 600.The 4th kind of structure provides second kind of circuit technology of sharing of a plurality of vertical transfer electrodes 12 equally.
Identical with first kind of circuit technology of sharing; Use second kind of circuit technology of sharing; Drive pulse waveform shaping controller 770 monitoring output pulse Pout are with respect to the retardation of input pulse Pin and the variation characteristic (percent of pass) of output pulse, thus control phase delay modulator 710 and percent of pass adjuster 730.Drive pulse waveform shaping controller 770 is shared by a plurality of vertical transfer electrodes 12, thereby has reduced hardware.The difference of second kind of circuit technology of sharing and first kind of circuit technology of sharing is, no matter whether equivalent input capacitance C12 is identical, shares and used drive pulse waveform shaping controller 770 with time division way.
In the vertical driver 700C of the vertical transitions driver 7C that is used for implementing second kind of circuit technology of sharing, the pulse output signals that drive pulse waveform shaping controller 770 occurs on a plurality of vertical transfer electrodes 12 with the time division way monitoring.770 controls of drive pulse waveform shaping controller make the pulse output signals of vertical transfer electrode 12 have predetermined conversion characteristic corresponding to the waveform shaping processor 760 of corresponding vertical transfer electrode 12 like this.
In order to use drive pulse waveform shaping controller 770, be provided with the switch 852 that is used for the output selectivity of load driver 750 is input to drive pulse waveform shaping controller 770 with a plurality of vertical transfer electrodes 12 with time division way.The input of switch 852 is connected to the output line that between load driver 750 and terminal 704, extends, and the output of switch 852 is connected to phase delay controller 772 and percent of pass controller 774 in the drive pulse waveform shaping controller 770.
Drive pulse waveform shaping controller 770 also comprises switch 854 and switch 856.Switch 854 optionally provides retardation control signal P72 delayed clock counter register 714 to the phase delay adjustment device 710 from phase delay controller 772.Switch 856 optionally provides percent of pass control signal P74 DAC data register 738 to the percent of pass adjuster 730 from percent of pass controller 774.
Vertical transitions driver 7C comprises selective signal generator 860, is used to produce the selection signal P860A and the P860B of the selection operation of control switch 852,854 and 856.Selective signal generator 860 receives from timing generator 810 and is used to the logic input 1b (vertical transfer clock VB) that drives the logic input 1a (vertical transfer clock VA) of a vertical transfer electrode 12A and be used to drive another vertical transfer electrode 12B.
Selective signal generator 860 is through in response to logic input 1a and one of 1b activation selecting signal P860A and P860B, the channel of selecting to be controlled by drive pulse waveform shaping controller 770 (will be by waveform shaping about which vertical transfer electrode 12A and 12B).
More particularly, selective signal generator 860 outputs select signal P860A and P860B to switch 852,854 and 856, select to handle in order to vertical transfer electrode 12 is carried out.With selecting signal P860A to be input to the control input end of switch 852A, 854A and the 856A relevant with vertical transfer electrode 12A.With selecting signal P860B to be input to the control input end of switch 852B, 854B and the 856B relevant with another vertical transfer electrode 12B.
When drive pulse waveform shaping controller 770 is regulated retardation and the percent of pass of vertical transfer electrode 12A in FEEDBACK CONTROL; Selective signal generator 860 is imported 1b (vertical transfer clock VB) with reference to the logic input 1a (vertical transfer clock VA) that provides from timing generator 810 with logic, and activation selecting signal P860A only.Therefore switch 852A, 854A and 856A conducting.When drive pulse waveform shaping controller 770 was regulated retardation and the percent of pass of vertical transfer electrode 12B in FEEDBACK CONTROL, selective signal generator 860 is activation selecting signal P860B only.Therefore switch 852B, 854B and 856B conducting.
Structure at the vertical transitions driver 7C that is used for carrying out second kind of circuit technology of sharing is provided with switch 852,854 and 856.Drive pulse waveform shaping controller 770 switches channel to be controlled with time division way.Drive pulse waveform shaping controller 770 therefore monitoring is exported the retardation of the relative input pulse Pin of pulse Pout and the variation characteristic (percent of pass) of output pulse, with control phase delay modulator 710 and percent of pass adjuster 730.Drive pulse waveform shaping controller 770 is shared by a plurality of vertical transfer electrodes 12.Therefore reduced hardware.
Those skilled in the art will appreciate that according to designing requirement and other factors, can carry out various distortion, combination, branch combination and replacement, as long as they are in the scope of accompanying claims and equivalent thereof.
Claims (17)
1. a driving is used for the method for the semiconductor device of physical quantity distribution sensing; This semiconductor device comprises the charge generation portion that is arranged in matrix that produces signal charge in response to the input electromagnetic wave; Be used for shifting continuously in one direction the first electric charge transfer portion of the signal charge that produces by charge generation portion; Be used on another direction different, shifting continuously the second electric charge transfer portion of the signal charge that shifts by the first electric charge transfer portion with a said direction; And be arranged on the charge storage portion between the first electric charge transfer portion and the second electric charge transfer portion, said charge storage portion comprises storage grid portion and keeps gate portion that the method comprising the steps of:
In effective migration period of said other direction; Through being that the basis utilizes counter-rotating and the drive signal drive signal electric charge on a said direction that have relative low speed transient state of phase alternation with each drive signal group, will transfer to charge storage portion by the signal charge of generation of charge generation portion and a unit that will on said other direction, shift; And
Outside effective migration period of said another direction; Through respectively with have predetermined phase relation and drive signal that have relative High-speed transient drive in the said charge storage portion storage grid portion with keep gate portion, the signal charge of the scheduled unit of transferring to charge storage portion is transferred to the second electric charge transfer portion.
2. according to the method for claim 1; Wherein being provided with each drive signal group is the drive signal that transfer electrode drive signal, the said first electric charge transfer portion of basic alternative inversion is provided with having the alternative inversion of essentially identical amplitude and identical transient state; Wherein, Said transfer electrode comprises ground floor vertical transfer electrode and second layer vertical transfer electrode, and said ground floor vertical transfer electrode is mutually the same on the pattern form and second layer vertical transfer electrode is mutually the same on pattern form.
3. according to the method for claim 2, wherein said drive signal group comprises at least three drive signals, and these at least three drive signals alternative inversion as a whole.
4. a driving is used for the method for the semiconductor device of physical quantity distribution sensing; This semiconductor device comprises; In semiconductor substrate; Be arranged to the charge generation portion that is used for producing signal charge of matrix, be used for shifting continuously in one direction the first electric charge transfer portion of the signal charge that produces by charge generation portion, be used on the other direction different, shifting continuously the second electric charge transfer portion of the signal charge that shifts by the first electric charge transfer portion with this direction in response to the input electromagnetic wave; Be used for to convert into by the signal charge that the second electric charge transfer portion shifts the efferent of the signal of telecommunication; And be arranged on the charge storage portion between the first electric charge transfer portion and the second electric charge transfer portion, said charge storage portion comprises storage grid portion and keeps gate portion that the method comprising the steps of:
In effective migration period of said other direction; Through drive signal electric charge on a said direction; The signal charge of the scheduled unit on the said other direction of charge generation portion generation is transferred to charge storage portion; And through outside effective migration period of said another direction; Respectively with have predetermined phase relation and drive signal that have relative High-speed transient drive in the said charge storage portion storage grid portion with keep gate portion, the signal charge of the scheduled unit on said another direction of transferring to charge storage portion is transferred to the second electric charge transfer portion; And
Through drive signal electric charge in effective migration period of said another direction, provide on the precalculated position of semiconductor substrate with semiconductor substrate on the noise compensation signal of noise anti-phase.
5. according to the method for claim 4, wherein be that the semiconductor substrate in the first electric charge transfer portion provides the noise compensation signal.
6. according to the method for claim 4, wherein efferent is arranged on second semiconductor substrate that is provided with on first semiconductor substrate, and the noise compensation signal is provided for second semiconductor substrate of efferent.
7. a driving is used for the method for the semiconductor device of physical quantity distribution sensing; This semiconductor device comprises; In semiconductor substrate; Be arranged to the charge generation portion that is used for producing signal charge of matrix in response to the input electromagnetic wave; Be used for shifting continuously in one direction the first electric charge transfer portion of the signal charge that produces by charge generation portion, be used on another direction different, shifting the second electric charge transfer portion of the signal charge that shifts by the first electric charge transfer portion continuously, and be arranged on the charge storage portion between the first electric charge transfer portion and the second electric charge transfer portion with this direction; Said charge storage portion comprises storage grid portion and keeps gate portion that the method comprising the steps of:
Through filtering type noise control circuit is the drive signal that semiconductor substrate provides noise to reduce; And
Through in effective migration period of said other direction on a said direction drive signal electric charge; The signal charge of the scheduled unit on the said other direction of charge generation portion generation is transferred to charge storage portion; And through outside effective migration period of said other direction; Respectively with have predetermined phase relation and drive signal that have relative High-speed transient drive in the said charge storage portion storage grid portion with keep gate portion, the signal charge of the scheduled unit on the said other direction of transferring to charge storage portion is transferred to the second electric charge transfer portion.
8. a driving is used for the method for the semiconductor device of physical quantity distribution sensing; This semiconductor device comprises; In semiconductor substrate; Be arranged to the charge generation portion that is used for producing signal charge of matrix in response to the input electromagnetic wave; Be used for shifting continuously in one direction the first electric charge transfer portion of the signal charge that produces by charge generation portion, be used on the other direction different, shifting the second electric charge transfer portion of the signal charge that shifts by the first electric charge transfer portion continuously, and be arranged on the charge storage portion between the first electric charge transfer portion and the second electric charge transfer portion with this direction; Said charge storage portion comprises storage grid portion and keeps gate portion that the method comprising the steps of:
The capacitive function element is provided, is used to make the earth resistance of semiconductor substrate to be capacitive; And
Through in effective migration period of said other direction on a said direction drive signal electric charge; To transfer to charge storage portion by the signal charge of the scheduled unit on the said other direction of charge generation portion generation; And through outside effective migration period of said other direction; Respectively with have predetermined phase relation and drive signal that have relative High-speed transient drive in the said charge storage portion storage grid portion with keep gate portion, the signal charge of the scheduled unit on the said other direction of transferring to charge storage portion is transferred to the second electric charge transfer portion.
9. a driving is used for the drive unit of the semiconductor device of physical quantity distribution sensing; This semiconductor device comprises the charge generation portion that is arranged to matrix that is used for producing in response to the input electromagnetic wave signal charge; Be used for shifting continuously in one direction the first electric charge transfer portion of the signal charge that produces by charge generation portion; Be used on the other direction different, shifting continuously the second electric charge transfer portion of the signal charge that shifts by the first electric charge transfer portion with this direction; And be arranged on the charge storage portion between the first electric charge transfer portion and the second electric charge transfer portion; Said charge storage portion comprises storage grid portion and keeps gate portion that this drive unit comprises that being used for the drive signal group is the drive circuit of the drive signal of basis output alternative inversion
Wherein through in effective migration period of said other direction; Adopt alternative inversion and drive signal that have relative low speed transient state drive signal electric charge on a said direction, will transfer to charge storage portion by the signal charge of generation of charge generation portion and the scheduled unit that will on said other direction, shift; And
Wherein through outside effective migration period of said other direction; Through respectively with have predetermined phase relation and drive signal that have relative High-speed transient drive in the said charge storage portion storage grid portion with keep gate portion, the signal charge of the scheduled unit on the said other direction of transferring to charge storage portion is transferred to the second electric charge transfer portion.
10. a driving is used for the drive unit of the semiconductor device of physical quantity distribution sensing; This semiconductor device comprises; In semiconductor substrate; Be used for producing the charge generation portion that is arranged to matrix of signal charge, be used for shifting continuously in one direction the first electric charge transfer portion of the signal charge that produces by charge generation portion, be used on the other direction different, shifting continuously the second electric charge transfer portion of the signal charge that shifts by the first electric charge transfer portion with this direction in response to the input electromagnetic wave; Be arranged on the charge storage portion between the first electric charge transfer portion and the second electric charge transfer portion; And the efferent that is used for the signal charge that shifts from the second electric charge transfer portion is converted to the signal of telecommunication, said charge storage portion comprises storage grid portion and keeps gate portion that this drive unit comprises:
Drive circuit; It is used for through in effective migration period of said other direction on a said direction drive signal electric charge; This moment, this semiconductor device was provided with drive signal; The signal charge of the scheduled unit on the said other direction of charge generation portion generation is transferred to charge storage portion; And through outside effective migration period of said other direction respectively with have predetermined phase relation and drive signal that have relative High-speed transient drive in the said charge storage portion storage grid portion with keep gate portion, the signal charge of the scheduled unit on the said other direction of transferring to charge storage portion is transferred to the second electric charge transfer portion; And
The noise compensation signal provides circuit; It is used for through drive signal electric charge in effective migration period of said other direction produce with semiconductor on the noise compensation signal of noise anti-phase, and be used for providing this noise compensation signal in the precalculated position of semiconductor substrate.
11. a driving is used for the drive unit of the semiconductor device of physical quantity distribution sensing; This semiconductor device comprises; In semiconductor substrate; Be used for producing the charge generation portion that is arranged to matrix of signal charge in response to the input electromagnetic wave; Be used for shifting continuously in one direction the first electric charge transfer portion of the signal charge that produces by charge generation portion, be used on the other direction different, shifting the second electric charge transfer portion of the signal charge that shifts by the first electric charge transfer portion continuously, and be arranged on the charge storage portion between the first electric charge transfer portion and the second electric charge transfer portion with this direction; Said charge storage portion comprises storage grid portion and keeps gate portion that this drive unit comprises:
Drive circuit; Be used for through in effective migration period of said other direction on a direction drive signal electric charge; This moment, this semiconductor device was provided with drive signal; The signal charge of the scheduled unit on the said other direction of charge generation portion generation is transferred to charge storage portion; And through outside the effective period of said other direction respectively with have predetermined phase relation and drive signal that have relative High-speed transient drive in the said charge storage portion storage grid portion with keep gate portion, the signal charge of the scheduled unit on the said other direction of transferring to charge storage portion is transferred to the second electric charge transfer portion; And
Filtering type noise control circuit is used for carrying out noise control from the drive signal of drive circuit output, and the drive signal that noise has reduced is offered semiconductor device.
12. drive unit according to claim 11; Wherein said filtering type noise control circuit comprises LC type low pass filter, and this LC type low pass filter comprises inductive element and the capacitive element that is arranged on the holding wire that is connected the drive signal between drive circuit and the semiconductor device.
13. a driving is used for the drive unit of the semiconductor device of physical quantity distribution sensing; This semiconductor device comprises; In semiconductor substrate; Be used for producing the charge generation portion that is arranged to matrix of signal charge, be used for shifting continuously in one direction the first electric charge transfer portion of the signal charge that produces by charge generation portion, be used on the other direction different, shifting continuously the second electric charge transfer portion of the signal charge that shifts by the first electric charge transfer portion with this direction in response to the input electromagnetic wave; Be arranged on the charge storage portion between the first electric charge transfer portion and the second electric charge transfer portion; And the efferent that is used for the signal charge that shifts from the second electric charge transfer portion is converted to the signal of telecommunication, said charge storage portion comprises storage grid portion and keeps gate portion that this drive unit comprises:
Drive circuit; Be used for through in effective migration period of said other direction on a said direction drive signal electric charge; This moment, semiconductor device was provided with drive signal; The signal charge of the scheduled unit on the said other direction of charge generation portion generation is transferred to charge storage portion; And through outside effective migration period of said other direction respectively with have predetermined phase relation and drive signal that have relative High-speed transient drive in the said charge storage portion storage grid portion with keep gate portion, the signal charge of the scheduled unit on the said other direction of transferring to charge storage portion is transferred to the second electric charge transfer portion; And
The capacitive function element is used to make the earth resistance of semiconductor substrate to be capacitive.
14. a realization comprises the electronic equipment of the driving of the semiconductor device that is used for the physical quantity distribution sensing:
The said semiconductor device that is used for the physical quantity distribution sensing; This semiconductor device comprises; In semiconductor substrate; Be used for producing the charge generation portion that is arranged to matrix of signal charge, be used for shifting continuously in one direction the first electric charge transfer portion of the signal charge that produces by charge generation portion, be used on the other direction different, shifting continuously the second electric charge transfer portion of the signal charge that shifts by the first electric charge transfer portion with this direction in response to the input electromagnetic wave; And being arranged on the charge storage portion between the first electric charge transfer portion and the second electric charge transfer portion, said charge storage portion comprises storage grid portion and keeps gate portion; And
Drive circuit, being used for the drive signal group is the drive signal of basis output alternative inversion,
Wherein, Through in effective migration period of said other direction, adopting alternative inversion and drive signal that the have relative low speed transient state drive signal electric charge on a said direction that provides from drive circuit; The signal charge of the scheduled unit on the said other direction of charge generation portion generation is transferred to charge storage portion; And wherein through outside effective migration period of said other direction respectively with have predetermined phase relation and drive signal that have relative High-speed transient drive in the said charge storage portion storage grid portion with keep gate portion, the signal charge of the scheduled unit on the said other direction of transferring to charge storage portion is transferred to the second electric charge transfer portion.
15. a realization comprises the electronic equipment of the driving of the semiconductor device that is used for the physical quantity distribution sensing:
The said semiconductor device that is used for the physical quantity distribution sensing; This semiconductor device comprises; In semiconductor substrate; Be used for producing the charge generation portion that is arranged to matrix of signal charge in response to the input electromagnetic wave; Be used for shifting continuously in one direction the first electric charge transfer portion of the signal charge that produces by charge generation portion, be used on the other direction different, shifting continuously the second electric charge transfer portion of the signal charge that shifts by the first electric charge transfer portion, be arranged on the charge storage portion between the first electric charge transfer portion and the second electric charge transfer portion with this direction; And the efferent that is used for the signal charge that shifts from the second electric charge transfer portion is converted to the signal of telecommunication, said charge storage portion comprises storage grid portion and keeps gate portion; And
The drive unit that comprises drive circuit and noise compensation signal supply circuit; This drive circuit through in effective migration period of said other direction on a said direction drive signal electric charge; This moment, semiconductor device was provided with drive signal; The signal charge of the scheduled unit on the said other direction of charge generation portion generation is transferred to charge storage portion; And through outside effective migration period of said other direction respectively with have predetermined phase relation and drive signal that have relative High-speed transient drive in the said charge storage portion storage grid portion with keep gate portion, the signal charge of the scheduled unit on the said other direction of transferring to charge storage portion is transferred to the second electric charge transfer portion; Noise compensation signal supply circuit through drive signal electric charge in effective migration period of said other direction produce with semiconductor on the noise compensation signal of noise anti-phase, and this noise compensation signal is provided in the precalculated position of semiconductor substrate.
16. a realization comprises the electronic equipment of the driving of the semiconductor device of physical quantity distribution sensing:
The said semiconductor device that is used for the physical quantity distribution sensing; This semiconductor device comprises; In semiconductor substrate; Be used for producing the charge generation portion that is arranged to matrix of signal charge, be used for shifting continuously in one direction the first electric charge transfer portion of the signal charge that produces by charge generation portion, be used on the other direction different, shifting continuously the second electric charge transfer portion of the signal charge that shifts by the first electric charge transfer portion with this direction in response to the input electromagnetic wave; And being arranged on the charge storage portion between the first electric charge transfer portion and the second electric charge transfer portion, said charge storage portion comprises storage grid portion and keeps gate portion; And
The drive unit that comprises drive circuit and filtering type noise control circuit; This drive circuit through in effective migration period of said other direction on a said direction drive signal electric charge; This moment, semiconductor device was provided with drive signal; The signal charge of the scheduled unit on the said other direction of charge generation portion generation is transferred to charge storage portion; And through outside effective migration period of said other direction respectively with have predetermined phase relation and drive signal that have relative High-speed transient drive in the said charge storage portion storage grid portion with keep gate portion, the signal charge of the scheduled unit on the said other direction of transferring to charge storage portion is transferred to the second electric charge transfer portion; Filtering type noise control circuit is to carrying out noise control from the drive signal of drive circuit output, and the drive signal that noise has reduced is offered semiconductor device.
17. a realization comprises the electronic equipment of the driving of the semiconductor device that is used for the physical quantity distribution sensing:
The said semiconductor device that is used for the physical quantity distribution sensing; This semiconductor device comprises; In semiconductor substrate; Be used for producing the charge generation portion that is arranged to matrix of signal charge in response to the input electromagnetic wave; Be used for shifting continuously in one direction the first electric charge transfer portion of the signal charge that produces by charge generation portion; Be used on the other direction different shifting continuously the second electric charge transfer portion of the signal charge that shifts by the first electric charge transfer portion with this direction, the efferent that is arranged on the charge storage portion between the first electric charge transfer portion and the second electric charge transfer portion and is used for the signal charge that shifts from the second electric charge transfer portion is converted to the signal of telecommunication, said charge storage portion comprises storage grid portion and keeps gate portion;
The capacitive function element is used to make the earth resistance of semiconductor substrate to be capacitive; And
The drive unit that comprises drive circuit; This drive circuit through in effective migration period of said other direction on a said direction drive signal electric charge; This moment, semiconductor device was provided with drive signal; The signal charge of the scheduled unit on the said other direction of charge generation portion generation is transferred to charge storage portion; And through outside effective migration period of said other direction respectively with have predetermined phase relation and drive signal that have relative High-speed transient drive in the said charge storage portion storage grid portion with keep gate portion, the signal charge of the scheduled unit on the said other direction of transferring to charge storage portion is transferred to the second electric charge transfer portion.
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005286061 | 2005-09-30 | ||
| JP2005-286061 | 2005-09-30 | ||
| JP2005286061A JP4453640B2 (en) | 2005-09-30 | 2005-09-30 | Driving method and driving apparatus for driving semiconductor device having capacitive load, and electronic apparatus |
| JP2006038448A JP4506684B2 (en) | 2006-02-15 | 2006-02-15 | Driving method and driving apparatus for driving load, and electronic apparatus |
| JP2006-038448 | 2006-02-15 | ||
| JP2006038448 | 2006-02-15 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200910129362 Division CN101527788B (en) | 2005-09-30 | 2006-09-30 | Load driving method, device and electronic apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1956491A CN1956491A (en) | 2007-05-02 |
| CN1956491B true CN1956491B (en) | 2012-12-26 |
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|---|---|---|---|
| CN 200610164121 Expired - Fee Related CN1956491B (en) | 2005-09-30 | 2006-09-30 | Method for driving semiconductor device, method and apparatus for driving load, and electronic apparatus |
| CN 200910129362 Expired - Fee Related CN101527788B (en) | 2005-09-30 | 2006-09-30 | Load driving method, device and electronic apparatus |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200910129362 Expired - Fee Related CN101527788B (en) | 2005-09-30 | 2006-09-30 | Load driving method, device and electronic apparatus |
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| JP (1) | JP4453640B2 (en) |
| CN (2) | CN1956491B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP4991415B2 (en) * | 2007-06-27 | 2012-08-01 | キヤノン株式会社 | Imaging device |
| JP5113460B2 (en) * | 2007-09-06 | 2013-01-09 | キヤノン株式会社 | Imaging system |
| JP5258372B2 (en) * | 2008-05-08 | 2013-08-07 | キヤノン株式会社 | Imaging apparatus and control method thereof |
| US7880782B2 (en) * | 2008-05-30 | 2011-02-01 | Eastman Kodak Company | Image sensor clocking method |
| JP5523131B2 (en) * | 2010-02-08 | 2014-06-18 | キヤノン株式会社 | Solid-state imaging device |
| CN102833497B (en) * | 2012-08-03 | 2014-11-19 | 昆山锐芯微电子有限公司 | Image sensor and image processing system |
| JP6112963B2 (en) * | 2013-05-10 | 2017-04-12 | キヤノン株式会社 | Imaging device |
| US11575853B2 (en) * | 2020-09-29 | 2023-02-07 | Shenzhen GOODIX Technology Co., Ltd. | Image sensor having high resolution analog to digital converter |
| CN114594817B (en) * | 2020-12-07 | 2023-10-27 | 中移物联网有限公司 | Circuit and method for adjusting driving capability of input/output chip |
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| US6801256B1 (en) * | 1998-06-02 | 2004-10-05 | Kabushiki Kaisha Toshiba | High-speed solid-state imaging device capable of suppressing image noise |
| CN1573888A (en) * | 2003-06-12 | 2005-02-02 | 精工爱普生株式会社 | Electro-optical apparatus and electronic system |
| JP2005269060A (en) * | 2004-03-17 | 2005-09-29 | Sony Corp | Drive method of ccd solid-state imaging element |
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- 2005-09-30 JP JP2005286061A patent/JP4453640B2/en not_active Expired - Fee Related
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- 2006-09-30 CN CN 200610164121 patent/CN1956491B/en not_active Expired - Fee Related
- 2006-09-30 CN CN 200910129362 patent/CN101527788B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6801256B1 (en) * | 1998-06-02 | 2004-10-05 | Kabushiki Kaisha Toshiba | High-speed solid-state imaging device capable of suppressing image noise |
| US20040233309A1 (en) * | 1998-06-02 | 2004-11-25 | Yoshitaka Egawa | High-speed solid-state imaging device capable of suppressing image noise |
| CN1573888A (en) * | 2003-06-12 | 2005-02-02 | 精工爱普生株式会社 | Electro-optical apparatus and electronic system |
| JP2005269060A (en) * | 2004-03-17 | 2005-09-29 | Sony Corp | Drive method of ccd solid-state imaging element |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4453640B2 (en) | 2010-04-21 |
| CN101527788A (en) | 2009-09-09 |
| CN101527788B (en) | 2013-09-18 |
| JP2007097018A (en) | 2007-04-12 |
| CN1956491A (en) | 2007-05-02 |
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