CN1992168A - 第iii族氮化物晶体物质的制造方法和制造装置 - Google Patents
第iii族氮化物晶体物质的制造方法和制造装置 Download PDFInfo
- Publication number
- CN1992168A CN1992168A CNA2006101725174A CN200610172517A CN1992168A CN 1992168 A CN1992168 A CN 1992168A CN A2006101725174 A CNA2006101725174 A CN A2006101725174A CN 200610172517 A CN200610172517 A CN 200610172517A CN 1992168 A CN1992168 A CN 1992168A
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- crystalline solid
- reative cell
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/38—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C23C16/303—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4488—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by in situ generation of reactive gas by chemical or electrochemical reaction
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
Abstract
Description
Claims (5)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005-379917 | 2005-12-28 | ||
JP2005379917 | 2005-12-28 | ||
JP2005379917 | 2005-12-28 | ||
JP2006218475A JP2007197302A (ja) | 2005-12-28 | 2006-08-10 | Iii族窒化物結晶の製造方法および製造装置 |
JP2006218475 | 2006-08-10 | ||
JP2006-218475 | 2006-08-10 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201110308166.6A Division CN102315103B (zh) | 2005-12-28 | 2006-12-26 | 第iii族氮化物晶体物质的制造方法和制造装置 |
Publications (2)
Publication Number | Publication Date |
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CN1992168A true CN1992168A (zh) | 2007-07-04 |
CN1992168B CN1992168B (zh) | 2011-12-07 |
Family
ID=37808103
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
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CN2006101725174A Active CN1992168B (zh) | 2005-12-28 | 2006-12-26 | 第iii族氮化物晶体物质的制造方法和制造装置 |
CN201110308166.6A Expired - Fee Related CN102315103B (zh) | 2005-12-28 | 2006-12-26 | 第iii族氮化物晶体物质的制造方法和制造装置 |
Family Applications After (1)
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CN201110308166.6A Expired - Fee Related CN102315103B (zh) | 2005-12-28 | 2006-12-26 | 第iii族氮化物晶体物质的制造方法和制造装置 |
Country Status (7)
Country | Link |
---|---|
US (4) | US7589000B2 (zh) |
EP (2) | EP2145987B1 (zh) |
JP (1) | JP2007197302A (zh) |
KR (1) | KR101347411B1 (zh) |
CN (2) | CN1992168B (zh) |
DE (1) | DE602006012274D1 (zh) |
TW (1) | TW200732522A (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102414801A (zh) * | 2009-08-27 | 2012-04-11 | 应用材料公司 | 在原位腔室清洁后的处理腔室去污方法 |
CN103137439A (zh) * | 2013-01-21 | 2013-06-05 | 华灿光电股份有限公司 | 一种GaN基外延片衬底的回收方法 |
CN106191989A (zh) * | 2016-07-30 | 2016-12-07 | 东莞市中镓半导体科技有限公司 | 一种hvpe设备用镓舟反应器 |
CN107723790A (zh) * | 2016-08-12 | 2018-02-23 | 上海新昇半导体科技有限公司 | 一种外延设备、设备制作方法及外延方法 |
Families Citing this family (35)
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JPWO2007023722A1 (ja) * | 2005-08-25 | 2009-02-26 | 住友電気工業株式会社 | GaxIn1−xN(0≦x≦1)結晶の製造方法、GaxIn1−xN(0≦x≦1)結晶基板、GaN結晶の製造方法、GaN結晶基板および製品 |
JP2007197302A (ja) * | 2005-12-28 | 2007-08-09 | Sumitomo Electric Ind Ltd | Iii族窒化物結晶の製造方法および製造装置 |
US8728234B2 (en) * | 2008-06-04 | 2014-05-20 | Sixpoint Materials, Inc. | Methods for producing improved crystallinity group III-nitride crystals from initial group III-nitride seed by ammonothermal growth |
US8236267B2 (en) | 2008-06-04 | 2012-08-07 | Sixpoint Materials, Inc. | High-pressure vessel for growing group III nitride crystals and method of growing group III nitride crystals using high-pressure vessel and group III nitride crystal |
DE102006017621B4 (de) * | 2006-04-12 | 2008-12-24 | Schott Ag | Vorrichtung und Verfahren zur Herstellung von multikristallinem Silizium |
JP4941172B2 (ja) * | 2007-08-22 | 2012-05-30 | 日立電線株式会社 | Iii−v族窒化物半導体自立基板及びiii−v族窒化物半導体自立基板の製造方法 |
JP4732423B2 (ja) * | 2007-11-13 | 2011-07-27 | 株式会社デンソー | 炭化珪素半導体装置の製造方法 |
US20100180913A1 (en) * | 2007-12-20 | 2010-07-22 | Chantal Arena | Methods for in-situ chamber cleaning process for high volume manufacture of semiconductor materials |
US7655543B2 (en) * | 2007-12-21 | 2010-02-02 | Asm America, Inc. | Separate injection of reactive species in selective formation of films |
EP2245218B1 (en) * | 2008-02-25 | 2019-06-19 | SixPoint Materials, Inc. | Method for producing group iii nitride wafers and group iii nitride wafers |
JP5209395B2 (ja) * | 2008-07-25 | 2013-06-12 | 大陽日酸株式会社 | 気相成長装置 |
WO2010045567A1 (en) * | 2008-10-16 | 2010-04-22 | Sixpoint Materials, Inc. | Reactor design for growing group iii nitride crystals and method of growing group iii nitride crystals |
WO2010060034A1 (en) * | 2008-11-24 | 2010-05-27 | Sixpoint Materials, Inc. | METHODS FOR PRODUCING GaN NUTRIENT FOR AMMONOTHERMAL GROWTH |
JP5045955B2 (ja) * | 2009-04-13 | 2012-10-10 | 日立電線株式会社 | Iii族窒化物半導体自立基板 |
WO2010129718A2 (en) | 2009-05-05 | 2010-11-11 | Sixpoint Materials, Inc. | Growth reactor for gallium-nitride crystals using ammonia and hydrogen chloride |
US20110263111A1 (en) * | 2010-04-21 | 2011-10-27 | Yuriy Melnik | Group iii-nitride n-type doping |
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- 2006-12-04 DE DE602006012274T patent/DE602006012274D1/de active Active
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Cited By (5)
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CN102414801A (zh) * | 2009-08-27 | 2012-04-11 | 应用材料公司 | 在原位腔室清洁后的处理腔室去污方法 |
CN103137439A (zh) * | 2013-01-21 | 2013-06-05 | 华灿光电股份有限公司 | 一种GaN基外延片衬底的回收方法 |
CN106191989A (zh) * | 2016-07-30 | 2016-12-07 | 东莞市中镓半导体科技有限公司 | 一种hvpe设备用镓舟反应器 |
CN107723790A (zh) * | 2016-08-12 | 2018-02-23 | 上海新昇半导体科技有限公司 | 一种外延设备、设备制作方法及外延方法 |
CN107723790B (zh) * | 2016-08-12 | 2020-07-07 | 上海新昇半导体科技有限公司 | 一种外延设备、设备制作方法及外延方法 |
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TW200732522A (en) | 2007-09-01 |
EP2145987B1 (en) | 2013-11-20 |
US7589000B2 (en) | 2009-09-15 |
CN102315103B (zh) | 2014-10-08 |
EP2145987A1 (en) | 2010-01-20 |
EP1803839B1 (en) | 2010-02-17 |
US20130244406A1 (en) | 2013-09-19 |
US20100009526A1 (en) | 2010-01-14 |
JP2007197302A (ja) | 2007-08-09 |
CN102315103A (zh) | 2012-01-11 |
US20110065265A1 (en) | 2011-03-17 |
US7858502B2 (en) | 2010-12-28 |
EP1803839A1 (en) | 2007-07-04 |
DE602006012274D1 (de) | 2010-04-01 |
KR20070070070A (ko) | 2007-07-03 |
CN1992168B (zh) | 2011-12-07 |
KR101347411B1 (ko) | 2014-01-02 |
US20070148920A1 (en) | 2007-06-28 |
US8404569B2 (en) | 2013-03-26 |
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