CN2323117Y - 格子窗户的杆件连接器 - Google Patents
格子窗户的杆件连接器 Download PDFInfo
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- CN2323117Y CN2323117Y CN97229514U CN97229514U CN2323117Y CN 2323117 Y CN2323117 Y CN 2323117Y CN 97229514 U CN97229514 U CN 97229514U CN 97229514 U CN97229514 U CN 97229514U CN 2323117 Y CN2323117 Y CN 2323117Y
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0276—Photolithographic processes using an anti-reflective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
Abstract
一种用以在格子窗户中水平地和垂直地将多个杆件进行连接的杆件连接器,以便极其便利地应用在同形状的杆件上,而组装杆件的各线条的时间能得到缩短,该杆件连接器包括:多个用以将多个杆件插入其中的插入部件,该插入部件突伸地设置在该杆件连接器的至少一个侧边上;一个具有中空部分以便减轻其质量的连接器主体及一个覆盖该中空部分的盖件。
Description
本实用新型一般地说涉及格子窗户,更具体地说涉及在窗框中具有多个杆件的格子窗户的杆件连接器。
格子窗户通常构造成具有多个水平和垂直地固定安装在窗户一侧的窗框内部的杆件,该格子窗户安置成能以滑动方式打开或关闭。
在格子窗户中的杆件可在其连接点通过杆件连接器便利地进行安装。这种结构已由本实用新型的申请人于1995年5月31日以申请号为95-12269的韩国实用新型向韩国专利局提出申请。
图1中示出在该韩国实用新型95-12269中公开的该杆件连接器。该杆件连接器包括连接器12,该连接器12具有多个多向性延伸插入部件12a,该插入部件12a则可插入在杆件14中形成的孔14a,从而可构成如图2所示的格子窗户的杆组件10。
该杆组件10与窗玻璃20一起插置在窗户的框格30中。再将该框格30插入到窗框40中,以便将该框格30在该窗框40中水平移动。
然而,该现有技术的杆件连接器存在着一个问题,即该杆件连接器插入到该杆件14以便只形成杆件的线条或其只用在将两条杆件连接的一个连接点上,其对各种形状的杆组件的应用则受到限制。该杆件连接器还具有一个问题,因其只用以杆件的线条的连接,故对其他形状的连接则需耗费很多时间,且也难以进行组装。
本实用新型是为了解决上述问题而提出的,因此本实用新型的目的在于提供一种适宜于便利地组装各种形状的杆件而可缩短杆件的组装时间的杆件连接器。
按照本实用新型所提供的一种用以在格子窗户中水平地和垂直地将多个杆件进行连接的杆件连接器,其包括:
多个用以将多个杆件插入其中的插入部件,该插入部件突伸地设置在该杆件连接器的至少一个侧边上;
一个具有中空部分以便减轻其质量的连接器主体;及
一个覆盖该中空部分的盖件。
为完全了解本实用新型的特征和目的,下文中将参照附图对本实用新型作详细说明。
图1为传统的格子窗户的透视图,其中示出一个杆件连接器和待连接的一个杆件处于分离的状态;
图2为连接以现有技术的的杆件连接器的格子窗户的正视图;
图3为本实用新型的一个实施例的格子窗户中的杆件连接器的分解透视图;
图4为本实用新型的实施例的杆件连接器和杆件处于分离状态的的透视图;
图5为采用本实用新型的实施例的杆件连接器制成的格子窗户的正视图。
下文将参照附图对本实用新型的实施例作详细说明。
如示于图3和图4中,本实用新型的杆件连接器50包括一个连接器主体60和一个盖件70,该盖件70用以插入到该连接器主体60的一个侧边。
该连接器主体60在其两个侧边设置有多个突伸的插入部件61和插入部件61’,该插入部件61和该插入部件61’皆用以插入到杆件80中。在两个插入部件中间部分设置有间隔壁63以便形成多个方形通孔62。该间隔壁63有凹腔部分63a以便减轻其重量,而该凹腔部分63a于其底部设置有一个联接钳口63b,以便将该盖件70以其一个(下文将叙述的)联接突伸件与其联接。
该连接器主体60的该插入部件61和该插入部件61’通常分别设置在该连接器主体60呈“L”字形的两侧边的一个侧边上。每一个插入部件61和每一个插入部件61’沿其长度方向上分别垂直地设置有多个弹性突伸环61a和弹性突伸环61a’,以便将该插入部件61和该插入部件61’牢固地保持插入在该杆件80的中空部分81中。
该盖件70为一块正方形的板块,其中间部份设置有一个正方形通孔72,该通孔72与该连接器主体60的相对应的通孔62对齐,从而使该盖件70的一个肋部分73可与该间隔壁63接触。
该肋部分73在其不同的位置处设置有突伸件对73a,以便将之紧密地导引在该凹腔部分63a的两侧边上,该肋部分73还设置有多个联接突伸件73b,以便与该凹腔部分63a的对应的联接钳口63b相互联接。
应当注意到,该杆件连接器50是由具有弹性性能的合成树脂制造。而设置在该连接器主体60的插入部件也可设置在其三个方向或四个方向的侧边上使之呈“T”形或“十”字形。
在如此构造而成的格子窗户的杆件连接器中,当将该盖件70的该突伸件对73a插入在该连接器主体60的该凹腔部分63a,且同时,将该盖件70的该联接突伸件73b插入在该凹腔部分63a的底部区域处形成的该联接钳口63b后,便可将该杆件连接器中50牢固地组装起来。
此外,当将如上组装的该杆件连接器中50的该插入部件61和该插入部件61’牢固地插入该杆件80的中空部分81中时,便可形成如示于图5的各种窗格子杆组件。
与此同时,在该插入部件61和该插入部件61’插入该杆件80的该中空部分81中时,在该插入部件61和该插入部件61’上设置的该弹性突伸环61a便牢固地黏附在该杆件80的该中空部分81中并使该插入部件61和该插入部件61’牢固地插入于其中,如此将多个杆件同时插在该杆件连接器50的各侧边的各该插入部件61和各该插入部件61’上,以便形成各种形状的窗户格子,从而缩短其组装时间。
将杆件90与该窗玻璃20一起插置在窗户的框格30中,而该框格可在该窗框40中水平滑动。
从上所述可清楚地看到,本实用新型的该格子窗户的杆件连接器的优点在于,该杆件连接器在其至少一个侧边突伸地设置有多个用以插置多个杆件的插入部件,使得该杆件连接器可极其便利地应用在各种不同形状的杆件上,而组装杆件的各线条的时间能得到缩短。
Claims (1)
1.一种格子窗户的杆件连接器,其包括:
多个用以将多个杆件插入其中的插入部件,该插入部件突伸地设置在该杆件连接器的至少一个侧边上;
一个具有中空部分以便减轻其质量的连接器主体;
一个覆盖该中空部分的盖件。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960048139A KR100243266B1 (ko) | 1996-10-24 | 1996-10-24 | (Ge,Si)Nx반사방지막및이를이용한패턴형성방법 |
KR48139/96 | 1996-12-12 |
Publications (1)
Publication Number | Publication Date |
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CN2323117Y true CN2323117Y (zh) | 1999-06-09 |
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ID=19478828
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN97229514U Expired - Fee Related CN2323117Y (zh) | 1996-10-24 | 1997-10-29 | 格子窗户的杆件连接器 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5986318A (zh) |
JP (1) | JP3545180B2 (zh) |
KR (1) | KR100243266B1 (zh) |
CN (1) | CN2323117Y (zh) |
TW (1) | TW413865B (zh) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
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US5926740A (en) * | 1997-10-27 | 1999-07-20 | Micron Technology, Inc. | Graded anti-reflective coating for IC lithography |
KR19990019538A (ko) * | 1997-08-29 | 1999-03-15 | 윤종용 | 하이드로 카본계의 가스를 사용한 반사방지막 형성방법 |
US7804115B2 (en) | 1998-02-25 | 2010-09-28 | Micron Technology, Inc. | Semiconductor constructions having antireflective portions |
US6274292B1 (en) * | 1998-02-25 | 2001-08-14 | Micron Technology, Inc. | Semiconductor processing methods |
US6316167B1 (en) * | 2000-01-10 | 2001-11-13 | International Business Machines Corporation | Tunabale vapor deposited materials as antireflective coatings, hardmasks and as combined antireflective coating/hardmasks and methods of fabrication thereof and application thereof |
US6268282B1 (en) * | 1998-09-03 | 2001-07-31 | Micron Technology, Inc. | Semiconductor processing methods of forming and utilizing antireflective material layers, and methods of forming transistor gate stacks |
US6828683B2 (en) | 1998-12-23 | 2004-12-07 | Micron Technology, Inc. | Semiconductor devices, and semiconductor processing methods |
KR100307629B1 (ko) * | 1999-04-30 | 2001-09-26 | 윤종용 | 하이드로 카본계의 가스를 이용한 반사방지막의 형성 및 적용방법 |
US6890448B2 (en) * | 1999-06-11 | 2005-05-10 | Shipley Company, L.L.C. | Antireflective hard mask compositions |
US7060584B1 (en) | 1999-07-12 | 2006-06-13 | Zilog, Inc. | Process to improve high performance capacitor properties in integrated MOS technology |
KR100304708B1 (ko) * | 1999-07-14 | 2001-11-01 | 윤종용 | 이중층 반사방지막을 갖는 반도체소자 및 그 제조방법 |
US6440860B1 (en) * | 2000-01-18 | 2002-08-27 | Micron Technology, Inc. | Semiconductor processing methods of transferring patterns from patterned photoresists to materials, and structures comprising silicon nitride |
US6423474B1 (en) * | 2000-03-21 | 2002-07-23 | Micron Technology, Inc. | Use of DARC and BARC in flash memory processing |
JP3698984B2 (ja) * | 2000-11-10 | 2005-09-21 | ヤマウチ株式会社 | シュープレス用ベルト |
KR100563819B1 (ko) * | 2003-07-03 | 2006-03-28 | 동부아남반도체 주식회사 | 반도체소자의 반사방지막 제조방법 |
JP4189822B2 (ja) * | 2003-07-22 | 2008-12-03 | エルジー エレクトロニクス インコーポレーテッド | 指紋センサシステム |
JP5151312B2 (ja) * | 2007-08-21 | 2013-02-27 | 大日本印刷株式会社 | カラーフィルタの製造方法 |
JP5151344B2 (ja) * | 2007-09-19 | 2013-02-27 | 大日本印刷株式会社 | カラーフィルタの製造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4870322A (en) * | 1986-04-15 | 1989-09-26 | Hoya Corporation | Electroluminescent panel having a layer of germanium nitride between an electroluminescent layer and a back electrode |
JP2843331B2 (ja) * | 1988-03-25 | 1999-01-06 | ソニー株式会社 | レジスト膜の露光方法 |
US5834125A (en) * | 1993-06-16 | 1998-11-10 | Integrated Device Technology, Inc. | Non-reactive anti-reflection coating |
US5378659A (en) * | 1993-07-06 | 1995-01-03 | Motorola Inc. | Method and structure for forming an integrated circuit pattern on a semiconductor substrate |
US5418019A (en) * | 1994-05-25 | 1995-05-23 | Georgia Tech Research Corporation | Method for low temperature plasma enhanced chemical vapor deposition (PECVD) of an oxide and nitride antireflection coating on silicon |
TW388083B (en) * | 1995-02-20 | 2000-04-21 | Hitachi Ltd | Resist pattern-forming method using anti-reflective layer, resist pattern formed, and method of etching using resist pattern and product formed |
US5750442A (en) * | 1995-09-25 | 1998-05-12 | Micron Technology, Inc. | Germanium as an antireflective coating and method of use |
US5741626A (en) * | 1996-04-15 | 1998-04-21 | Motorola, Inc. | Method for forming a dielectric tantalum nitride layer as an anti-reflective coating (ARC) |
US5841179A (en) * | 1996-08-28 | 1998-11-24 | Advanced Micro Devices, Inc. | Conductive layer with anti-reflective surface portion |
-
1996
- 1996-10-24 KR KR1019960048139A patent/KR100243266B1/ko not_active IP Right Cessation
-
1997
- 1997-06-28 TW TW086109080A patent/TW413865B/zh not_active IP Right Cessation
- 1997-10-23 US US08/956,776 patent/US5986318A/en not_active Expired - Lifetime
- 1997-10-24 JP JP31002097A patent/JP3545180B2/ja not_active Expired - Fee Related
- 1997-10-29 CN CN97229514U patent/CN2323117Y/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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TW413865B (en) | 2000-12-01 |
US5986318A (en) | 1999-11-16 |
JP3545180B2 (ja) | 2004-07-21 |
KR100243266B1 (ko) | 2000-03-02 |
KR19980028944A (ko) | 1998-07-15 |
JPH10163107A (ja) | 1998-06-19 |
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