CN2492947Y - Amorphous Al-In-Ga nitride LED unit - Google Patents
Amorphous Al-In-Ga nitride LED unit Download PDFInfo
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- CN2492947Y CN2492947Y CN01231805U CN01231805U CN2492947Y CN 2492947 Y CN2492947 Y CN 2492947Y CN 01231805 U CN01231805 U CN 01231805U CN 01231805 U CN01231805 U CN 01231805U CN 2492947 Y CN2492947 Y CN 2492947Y
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Abstract
The utility model relates to a non-crystal system AlInGaN (Aluminum Nitride Indium Gallium) light-emitting diode device. Multiple layers of single-crystal system or multi-crystal system compound semiconductor layers are formed on the base material of gallium nitride or sapphire by the method of vapor phase growth, and are respectively added with i-type, p-type and / or n-type impurities to form a light-emitting diode component structure, thus realizing the effect of a high luminous rate.
Description
Invention field
The utility model relates to a kind of amorphous AlInGaN (aluminum indium nitride gallium) light-emitting diode assembly, it is to form a p type monocrystalline or polycrystalline series compound semiconductor layer in regular turn on the p type amorphous compound semiconductor layer with amorphous aluminum indium nitride gallium (AlInGaN) light-emitting diode component, one monocrystalline or polycrystalline series compound semiconductor impurity doped layer, one p/n monocrystalline or polycrystalline series compound semiconductor layer and a n type monocrystalline or polycrystalline series compound semiconductor layer form a p/n monocrystalline or polycrystalline series compound semiconductor layer in regular turn on n type amorphous compound semiconductor layer, one monocrystalline or polycrystalline series compound semiconductor impurity doped layer, one the 2nd p type monocrystalline or polycrystalline series compound semiconductor layer and one the one p type monocrystalline or polycrystalline series compound semiconductor layer.
Background technology
At present, traditional amorphous AlInGaN light-emitting diode assembly, see also Fig. 1, Fig. 2, wherein shown in Figure 1 is to form one the one p type amorphous compound semiconductor layer 102, one the 2nd p type amorphous compound semiconductor layer 104, an amorphous compound semiconductor impurity doped layer 106, a p/n amorphous compound semiconductor layer 108 and a n type amorphous compound semiconductor layer 110 in regular turn at a p type gallium nitride base board 100;
Shown in Figure 2 is to form a n type amorphous compound semiconductor layer 202, a p/n amorphous compound semiconductor layer 204, an amorphous compound semiconductor impurity doped layer 206, one the 2nd p type amorphous compound semiconductor layer 208 and one the one p type amorphous compound semiconductor layer 210 on a sapphire substrate 200 in regular turn;
By providing p/n to connect face betwixt, to realize high luminous efficiency and to reduce cost.
But it can not be useful in monocrystalline system or polycrystalline series AlInGaN light-emitting diode.
Summary of the invention
The utility model is intended to make further improvement design at said apparatus, and it is to form a p type monocrystalline or polycrystalline series compound semiconductor layer, a monocrystalline or polycrystalline series compound semiconductor impurity doped layer, a p/n monocrystalline or polycrystalline series compound semiconductor layer and a n type monocrystalline or polycrystalline series compound semiconductor layer in regular turn on a p type amorphous compound semiconductor layer of amorphous AlInGaN light-emitting diode assembly.
Another purpose of the present utility model, be to provide the light-emitting diode component structure that can finish the high luminous efficiency effect, it is to form a p/n monocrystalline or polycrystalline series compound semiconductor layer, a monocrystalline or polycrystalline series compound semiconductor impurity doped layer, one the 2nd p type monocrystalline or polycrystalline series compound semiconductor layer and one the one p type monocrystalline or polycrystalline series compound semiconductor layer in regular turn on the n type amorphous compound semiconductor layer with amorphous AlInGaN light-emitting diode assembly.
For achieving the above object, the utility model proposes a kind of amorphous aluminum indium nitride gallium light-emitting diode assembly, it forms one the one p type amorphous compound semiconductor layer, one the 2nd p type monocrystalline or polycrystalline series compound semiconductor layer, a monocrystalline or polycrystalline series compound semiconductor impurity doped layer, a p/n monocrystalline or polycrystalline series compound semiconductor layer and a n type monocrystalline or polycrystalline series compound semiconductor layer in regular turn on a p type nitrogenize mirror substrate;
Whereby, to form the light-emitting diode component structure, reach the high luminous efficiency effect.
A kind of amorphous aluminum indium nitride gallium light-emitting diode assembly, it forms one the one n type amorphous compound semiconductor layer, a p/n monocrystalline or polycrystalline series compound semiconductor layer, a monocrystalline or polycrystalline series compound semiconductor impurity doped layer, one the 2nd p type monocrystalline or polycrystalline series compound semiconductor layer and one the one p type monocrystalline or polycrystalline series compound semiconductor layer in regular turn on a sapphire substrate.
Whereby, to form the light-emitting diode component structure, reach the high luminous efficiency effect.
In sum, the structure by the utility model amorphous AlInGaN light-emitting diode assembly can form high luminous efficiency.
Description of drawings:
Fig. 1, Fig. 2 are the schematic diagrames of traditional amorphous AlInGaN light-emitting diode assembly;
Fig. 3 is the structure chart that the utility model first is implemented assembly;
Fig. 4 is the structure chart that the utility model second is implemented assembly.
Embodiment
For finishing above-mentioned purpose and structure, technological means that the utility model adopted and effect thereof, existing describe its structure in detail with regard to embodiment of the present utility model in conjunction with the accompanying drawings and function as follows so that understand fully.
Seeing also Fig. 3, is the structure chart of first embodiment of the utility model amorphous AlInGaN light-emitting diode assembly.It is on a p type gallium nitride base board 100, with modes such as vapour phase growth grow up in regular turn one the one p type amorphous compound semiconductor layer 102, one the 2nd p type monocrystalline or polycrystalline series compound semiconductor layer 103, a monocrystalline or polycrystalline series compound semiconductor impurity doped layer 105, a p/n monocrystalline or polycrystalline series compound semiconductor layer 107 and a n type monocrystalline or polycrystalline series compound semiconductor layer 109.
Wherein a p type amorphous compound semiconductor layer 102 is as resilient coating; The 2nd p type monocrystalline or polycrystalline series compound semiconductor layer 103 are as the downside cover layer, and monocrystalline or polycrystalline series compound semiconductor impurity doped layer 105 are as luminescent layer; P/n monocrystalline or polycrystalline series compound semiconductor layer 107 are as the upside cover layer; N type monocrystalline or polycrystalline series compound semiconductor layer 109 be as electrode, and provide p/n to connect face.
Above-mentioned p type impurity can be zinc, magnesium, beryllium, strontium and/or cadmium.N type impurity can be silicon, germanium, tin, sulphur, tellurium and/or selenium.And after adding impurity, can carry out temperature 600-1200 ℃, 1-50 minute heating, annealing or electron beam sequence of fire (electron-beam shooting).
Vapour phase growth gas comprises ammonia (ammonia), diamine (hydrazine) or ammonia one diamine (ammonia-hydrazine) in conjunction with trimethyl aluminium (trimethyl aluminum) in addition, and adds trimethyl gallium (trimethyl gallium) and/or triethyl-gallium (triethylgallium).Or vapour phase growth gas comprises diethyl zinc (diethyl-zinc), trimethyl zinc (trimethyl-zinc), trimethyl indium (trimethyl-indium), the cyclopentadienyl group magnesium (cyclopentadienyl-magnesium) that mixes the back use.
Seeing also Fig. 4, is the structure chart of second embodiment of the utility model amorphous AlInGaN light-emitting diode assembly.It is on a sapphire substrate 200, with modes such as vapour phase growth grow up in regular turn one the one n type amorphous compound semiconductor layer 202, a p/n monocrystalline or polycrystalline series compound semiconductor layer 203, a monocrystalline or polycrystalline series compound semiconductor impurity doped layer 205, one the 2nd p type monocrystalline or polycrystalline series compound semiconductor layer 207 and one the one p type monocrystalline or polycrystalline series compound semiconductor layer 209.
Wherein, n type amorphous compound semiconductor layer 202 is as resilient coating; P/n monocrystalline or polycrystalline series compound semiconductor layer 203 are as the downside cover layer; Monocrystalline or polycrystalline series compound semiconductor impurity doped layer 205 are as luminescent layer; The 2nd p type monocrystalline or polycrystalline series compound semiconductor layer 207 are as the upside cover layer; The one p type monocrystalline or polycrystalline series compound semiconductor layer 209 are as electrode layer and provide p/n to connect face.
Above-mentioned D type impurity can be zinc, magnesium, beryllium, strontium and/or cadmium.N type impurity can be silicon, germanium, tin, sulphur, tellurium and/or selenium.And after adding impurity, can carry out temperature 600-1200 ℃, 1-50 minute heating, annealing or electron beam sequence of fire (electron-beam shooting).
Vapour phase growth gas comprises ammonia (ammonia), diamine (hydrazine) or ammonia-diamine (ammonia-hydrazine) in conjunction with trimethyl aluminium (trimethyl aluminum) in addition, and adds trimethyl gallium (trimethyl galliuln) and/or triethyl-gallium (triethyl gallium).Or vapour phase growth gas comprises diethyl zinc (diethyl-zinc), trimethyl zinc (trimethyl-zinc), trimethyl indium (trimethyl-indium), the cyclopentadienyl group magnesium (cyclopentadienyl-magnesium) that mixes the back use.
The above; it only is one of the best of the present utility model specific embodiment; but structural feature of the present utility model is not limited thereto; any people who is familiar with this technology in field of the present utility model, can think easily and variation or modify all can covered in the protection range of claim of the present utility model.
Claims (2)
1. an amorphous aluminum indium nitride gallium light-emitting diode assembly is characterized in that: form one the one p type amorphous compound semiconductor layer, one the 2nd p type monocrystalline or polycrystalline series compound semiconductor layer, a monocrystalline or polycrystalline series compound semiconductor impurity doped layer, a p/n monocrystalline or polycrystalline series compound semiconductor layer and a n type monocrystalline or polycrystalline series compound semiconductor layer in regular turn on a p type nitrogenize mirror substrate.
2. an amorphous aluminum indium nitride gallium light-emitting diode assembly is characterized in that: form one the one n type amorphous compound semiconductor layer, a p/n monocrystalline or polycrystalline series compound semiconductor layer, a monocrystalline or polycrystalline series compound semiconductor impurity doped layer, one the 2nd p type monocrystalline or polycrystalline series compound semiconductor layer and one the one p type monocrystalline or polycrystalline series compound semiconductor layer in regular turn on a sapphire substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN01231805U CN2492947Y (en) | 2001-07-18 | 2001-07-18 | Amorphous Al-In-Ga nitride LED unit |
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| Application Number | Priority Date | Filing Date | Title |
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| CN01231805U CN2492947Y (en) | 2001-07-18 | 2001-07-18 | Amorphous Al-In-Ga nitride LED unit |
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| CN2492947Y true CN2492947Y (en) | 2002-05-22 |
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| CN01231805U Expired - Fee Related CN2492947Y (en) | 2001-07-18 | 2001-07-18 | Amorphous Al-In-Ga nitride LED unit |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1316567C (en) * | 2003-04-16 | 2007-05-16 | 方大集团股份有限公司 | Preparation f green light fallium nitride base LED epitaxial wafer by adopting multiquantum well |
| CN100358166C (en) * | 2004-09-16 | 2007-12-26 | 璨圆光电股份有限公司 | Nitride stacked crystal layer structure and its producing method |
| US8222650B2 (en) | 2001-12-24 | 2012-07-17 | Crystal Is, Inc. | Nitride semiconductor heterostructures and related methods |
| US8323406B2 (en) | 2007-01-17 | 2012-12-04 | Crystal Is, Inc. | Defect reduction in seeded aluminum nitride crystal growth |
| CN101331249B (en) * | 2005-12-02 | 2012-12-19 | 晶体公司 | Doped aluminum nitride crystals and methods of making them |
| US9028612B2 (en) | 2010-06-30 | 2015-05-12 | Crystal Is, Inc. | Growth of large aluminum nitride single crystals with thermal-gradient control |
| US9034103B2 (en) | 2006-03-30 | 2015-05-19 | Crystal Is, Inc. | Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them |
| US9299880B2 (en) | 2013-03-15 | 2016-03-29 | Crystal Is, Inc. | Pseudomorphic electronic and optoelectronic devices having planar contacts |
| US9447521B2 (en) | 2001-12-24 | 2016-09-20 | Crystal Is, Inc. | Method and apparatus for producing large, single-crystals of aluminum nitride |
| US9771666B2 (en) | 2007-01-17 | 2017-09-26 | Crystal Is, Inc. | Defect reduction in seeded aluminum nitride crystal growth |
| US10074784B2 (en) | 2011-07-19 | 2018-09-11 | Crystal Is, Inc. | Photon extraction from nitride ultraviolet light-emitting devices |
| US10446391B2 (en) | 2007-01-26 | 2019-10-15 | Crystal Is, Inc. | Thick pseudomorphic nitride epitaxial layers |
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2001
- 2001-07-18 CN CN01231805U patent/CN2492947Y/en not_active Expired - Fee Related
Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9447521B2 (en) | 2001-12-24 | 2016-09-20 | Crystal Is, Inc. | Method and apparatus for producing large, single-crystals of aluminum nitride |
| US8222650B2 (en) | 2001-12-24 | 2012-07-17 | Crystal Is, Inc. | Nitride semiconductor heterostructures and related methods |
| CN1316567C (en) * | 2003-04-16 | 2007-05-16 | 方大集团股份有限公司 | Preparation f green light fallium nitride base LED epitaxial wafer by adopting multiquantum well |
| CN100358166C (en) * | 2004-09-16 | 2007-12-26 | 璨圆光电股份有限公司 | Nitride stacked crystal layer structure and its producing method |
| US9525032B2 (en) | 2005-12-02 | 2016-12-20 | Crystal Is, Inc. | Doped aluminum nitride crystals and methods of making them |
| CN101331249B (en) * | 2005-12-02 | 2012-12-19 | 晶体公司 | Doped aluminum nitride crystals and methods of making them |
| US8747552B2 (en) | 2005-12-02 | 2014-06-10 | Crystal Is, Inc. | Doped aluminum nitride crystals and methods of making them |
| US9447519B2 (en) | 2006-03-30 | 2016-09-20 | Crystal Is, Inc. | Aluminum nitride bulk crystals having high transparency to untraviolet light and methods of forming them |
| US9034103B2 (en) | 2006-03-30 | 2015-05-19 | Crystal Is, Inc. | Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them |
| US8834630B2 (en) | 2007-01-17 | 2014-09-16 | Crystal Is, Inc. | Defect reduction in seeded aluminum nitride crystal growth |
| US8323406B2 (en) | 2007-01-17 | 2012-12-04 | Crystal Is, Inc. | Defect reduction in seeded aluminum nitride crystal growth |
| US9624601B2 (en) | 2007-01-17 | 2017-04-18 | Crystal Is, Inc. | Defect reduction in seeded aluminum nitride crystal growth |
| US9670591B2 (en) | 2007-01-17 | 2017-06-06 | Crystal Is, Inc. | Defect reduction in seeded aluminum nitride crystal growth |
| US9771666B2 (en) | 2007-01-17 | 2017-09-26 | Crystal Is, Inc. | Defect reduction in seeded aluminum nitride crystal growth |
| US10446391B2 (en) | 2007-01-26 | 2019-10-15 | Crystal Is, Inc. | Thick pseudomorphic nitride epitaxial layers |
| US9028612B2 (en) | 2010-06-30 | 2015-05-12 | Crystal Is, Inc. | Growth of large aluminum nitride single crystals with thermal-gradient control |
| US9580833B2 (en) | 2010-06-30 | 2017-02-28 | Crystal Is, Inc. | Growth of large aluminum nitride single crystals with thermal-gradient control |
| US10074784B2 (en) | 2011-07-19 | 2018-09-11 | Crystal Is, Inc. | Photon extraction from nitride ultraviolet light-emitting devices |
| US9299880B2 (en) | 2013-03-15 | 2016-03-29 | Crystal Is, Inc. | Pseudomorphic electronic and optoelectronic devices having planar contacts |
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| CF01 | Termination of patent right due to non-payment of annual fee |