CN2613054Y - Base plate structure of LED wafer - Google Patents

Base plate structure of LED wafer Download PDF

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Publication number
CN2613054Y
CN2613054Y CNU03240526XU CN03240526U CN2613054Y CN 2613054 Y CN2613054 Y CN 2613054Y CN U03240526X U CNU03240526X U CN U03240526XU CN 03240526 U CN03240526 U CN 03240526U CN 2613054 Y CN2613054 Y CN 2613054Y
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CN
China
Prior art keywords
circuit board
led wafer
substrate
board
emitting diode
Prior art date
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Expired - Fee Related
Application number
CNU03240526XU
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Chinese (zh)
Inventor
呼惟明
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CHINA SEMICONDUCTOR Corp
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CHINA SEMICONDUCTOR Corp
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Priority to CNU03240526XU priority Critical patent/CN2613054Y/en
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Publication of CN2613054Y publication Critical patent/CN2613054Y/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/32257—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic the layer connector connecting to a bonding area disposed in a recess of the surface of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48464—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Abstract

A basic board structure of a light emitting diode mainly comprises a pressed and overlapped basic board and circuit board, wherein the basic board is an aluminum board or a copper plate structure, the basic board is pressed by a fixed circuit board with the surface equipped with a printing circuit layer, the suitable position on the circuit board surface is equipped with above one concave cup, the concave cup is punctured to the basic board by the printing circuit layer, when being composed and used, the concave cup is fixedly equipped with a light emitting diode chip, the light emitting diode chip is equipped with a wire to be connected to the printing circuit layer on the surface and is sealed and fixed by transparent colloid, when the light emitting diode emits light, the generated heat is conducted to the basic board for radiation directly by the concave cup bottom with a better radiation function.

Description

The base plate structure of LED wafer
Technical field
The utility model relates to a kind of base plate structure of LED wafer, refer in particular to and a kind ofly pressing superimposed making with metal substrate and circuit board, again LED wafer is disposed in the recessed cup that is through to metal substrate, can strengthens effect the LED wafer heat radiation.
Background technology
General light-emitting diode has very long useful life and lower power consumption power, so the application of light-emitting diode is just tending to generalization, for example electronic board of large-scale demonstration, traffic lights and directing light of automobile etc.Again, present light-emitting diode industry just strides forward towards the target of high brightness, low light loss, so that light-emitting diode is enough to replace traditional lighting.Will improve the brightness of light-emitting diode and power etc. at present, except improving from the material of the packaging structure of light-emitting diode and housing, the heat radiation situation of light-emitting diode influences it especially and uses the power and the key in life-span.
As shown in Figure 4, structure for traditional light-emitting diode, wherein light-emitting component is to be provided with one recessed glass of a11 in two ends that connect the pin a1 among pin a1, the a2, fix a LED wafer b in recessed cup a1 bottom surface, and this LED wafer b also is connected to the top of another pin a2 with a gold thread c, to form electric loop, be a transparent shell d in two pin a1, the encapsulation of a2 top encapsulating of above-mentioned light-emitting component more thereafter, to constitute a light-emitting diode.Its major defect is:
Above-mentioned traditional LED wafer b can generate heat when work, and LED wafer b is installed in the recessed cup a11 on pin a1 top, and be encapsulated in fully in the transparent shell d, causing its heat sinking function is on duty mutually, even can't dispel the heat fully, so traditional LED wafer b easily causes damage under the environment that is in high temperature for a long time, and makes the working voltage of LED wafer b and electric current be limited in the very state of low order, cause and to promote its use power and brightness.
As shown in Figure 5, be other traditional lumination of light emitting diode component construction, it is the LED wafer b that directly is provided with on a PC circuit board e more than or, and LED wafer b is connected on the printed circuit e1 of PC circuit board e with gold thread c again, and then forms with transparent resin f encapsulation.The PC circuit board e of this conventional construction is the insulation material, its no heat conduction and radiating effect, though conventional P C circuit board e bottom surface is provided with the electrode of the printed circuit e1 of copper platinum e2 and end face in addition and is conducted, cause LED wafer b directly to be bonded on the printed circuit e1 of PC circuit board e, and utilize its heat conduction to copper platinum e2, in the hope of reaching preferable radiating effect.Its major defect is:
It is actively little to conduct to the path surface of copper platinum e2 by printed circuit e1 in this conventional construction, and the volume of copper platinum e2 is minimum, it is little to cause its endothermic effect, its radiating effect that can reach also reduces thereupon, generally also can install a shell still more in this light-emitting component outside additional and form a confined space, so its radiating effect is difficulty especially, so to necessity of improvement is arranged in fact.
Summary of the invention
Main purpose of the present utility model provides a kind of base plate structure of LED wafer, wherein the substrate with aluminium matter or copper structure is an aggregate, pressing insulation board (being the PC circuit board) more thereon with layer printed circuit board, LED wafer is directly to be fixed on the recessed cup of substrate, with the heat that can be produced when luminous, be directly conducted to the substrate heat radiation, reach the purpose that strengthens heat radiation function.
The purpose of this utility model is achieved in that a kind of base plate structure of LED wafer, it comprises that a substrate and a circuit board pressing superimposed making, it is characterized in that: this substrate is aluminium sheet or copper coin structure, pressing fixing circuit board surface to have layer printed circuit board on this substrate, this circuit board surface appropriate location is provided with more than one recessed cup at least, and this recessed cup is through to this substrate by layer printed circuit board.
The insulating barrier of the circuit board of this substrate is isolated the layer printed circuit board on it fully, and not conducting mutually.
When being used in combination, in above-mentioned recessed cup internal fixation one LED wafer is arranged, sealing is fixed after routing on the LED wafer is connected to the layer printed circuit board on surface again, when this LED wafer is luminous, the heat that it produced can directly conduct to substrate by the LED wafer bottom surface, to reach the effect of preferable heat radiation.
Describe in detail below in conjunction with the preferred embodiment conjunction with figs..
Description of drawings
Fig. 1 is the base plate structure decomposing schematic representation of LED wafer of the present utility model.
Fig. 2 is a generalized section of the present utility model.
Fig. 3 is a combination generalized section of the present utility model.
Fig. 4 is traditional led configurations generalized section.
Fig. 5 is another kind of traditional led configurations combination generalized section.
Embodiment
Consult Fig. 1-shown in Figure 2, structure of the present utility model comprises that mainly a substrate 10 and a circuit board 20 pressing superimposed making, it is characterized in that: this substrate 10 is aluminium sheet or copper coin structure, on substrate 10, pressing fixing circuit board 20 surfaces to have layer printed circuit board 21, and be provided with more than one recessed cup 30 at least in circuit board 20 surperficial appropriate locations, this recessed cup 30 is through to substrate 10 by layer printed circuit board 21.
Consult shown in Figure 3, when being used in combination the utility model, in the recessed cup 30 that is through to metal substrate 10, be fixed with a LED wafer 40 with elargol, be connected on the positive pole and negative pole circuit of layer printed circuit board 21 in routing on the LED wafer 40 again, fix with transparent colloid 50 involutions more thereafter; When these LED wafer 40 conducting galvanoluminescences, the heat that it produced can directly conduct to substrate 10 by LED wafer 40 bottoms, to reach best radiating effect.
Consult shown in Figure 1 again, planning has anodal 21a and negative pole 21b circuit in the layer printed circuit board 21 on circuit board 20 surfaces in the present embodiment, and the substrate 10 of these circuit and bottom is isolated by the insulating barrier 22 of circuit board 20 fully, during use, then be passed in hole 23 (this hole is to get out after substrate and circuit board are pressed into one) on substrate and the circuit board with lead 60, respectively power supply is connected to this printed circuit positive and negative electrode input, as shown in Figure 3; Structure of the present utility model can directly be fixed on the metal lamp holder 70 of light fixture, and substrate 10 wherein can be contacted with metal lamp holder 70, increasing the effect of its heat radiation, and can not produce leaky, and can more promote its practical effect.
As above-mentioned circuit board 20, the utility model also directly is connected with control IC thereon or/and voice IC (because its conventional art, so do not show in graphic), can expand its scope of application.
The base plate structure of LED wafer of the present utility model has following advantage at least:
1, utilizes the direct and substrate contacts in LED wafer bottom surface in the utility model, provide element good heat radiation approach.
2, substrate has bigger heat absorption volume and bigger area of dissipation in the utility model, and the heat that LED wafer is discharged leaves as soon as possible.
Though the utility model discloses as above with a preferred embodiment; right its is not in order to limiting protection range of the present utility model, anyly has the knack of this skill person, in not breaking away from spirit and scope of the present utility model; institute is used for a variety of modifications and variations, and all belongs within the protection range of the present utility model.

Claims (2)

1, a kind of base plate structure of LED wafer, it comprises that a substrate and a circuit board pressing superimposed making, it is characterized in that: this substrate is aluminium sheet or copper coin structure, pressing fixing circuit board surface to have layer printed circuit board on this substrate, this circuit board surface appropriate location is provided with more than one recessed cup at least, and this recessed cup is through to this substrate by layer printed circuit board.
2, the base plate structure of LED wafer according to claim 1 is characterized in that: the insulating barrier of the circuit board of this substrate is isolated the layer printed circuit board on it fully, and not conducting mutually.
CNU03240526XU 2003-03-12 2003-03-12 Base plate structure of LED wafer Expired - Fee Related CN2613054Y (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CNU03240526XU CN2613054Y (en) 2003-03-12 2003-03-12 Base plate structure of LED wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNU03240526XU CN2613054Y (en) 2003-03-12 2003-03-12 Base plate structure of LED wafer

Publications (1)

Publication Number Publication Date
CN2613054Y true CN2613054Y (en) 2004-04-21

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100430795C (en) * 2004-10-30 2008-11-05 乐金显示有限公司 Light emitting diode backlight unit and liquid crystal display device using the same
CN102130110A (en) * 2010-12-24 2011-07-20 哈尔滨工业大学 Multi-chipset high-power LED encapsulation structure
CN101714597B (en) * 2006-04-05 2011-11-16 三星Led株式会社 Fabrication method for a light emitting diode package
CN104241461A (en) * 2014-07-23 2014-12-24 无锡来德电子有限公司 Method for manufacturing LED package module and LED package module
CN104425683A (en) * 2013-08-21 2015-03-18 无锡来德电子有限公司 LED packaging support with all-metal structure

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100430795C (en) * 2004-10-30 2008-11-05 乐金显示有限公司 Light emitting diode backlight unit and liquid crystal display device using the same
US7633577B2 (en) 2004-10-30 2009-12-15 Lg Display Co., Ltd. Light emitting diode backlight unit and liquid crystal display device using the same
CN101714597B (en) * 2006-04-05 2011-11-16 三星Led株式会社 Fabrication method for a light emitting diode package
CN102130110A (en) * 2010-12-24 2011-07-20 哈尔滨工业大学 Multi-chipset high-power LED encapsulation structure
CN104425683A (en) * 2013-08-21 2015-03-18 无锡来德电子有限公司 LED packaging support with all-metal structure
CN104241461A (en) * 2014-07-23 2014-12-24 无锡来德电子有限公司 Method for manufacturing LED package module and LED package module
CN104241461B (en) * 2014-07-23 2019-05-24 无锡来德电子有限公司 A kind of LED package module production method

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C19 Lapse of patent right due to non-payment of the annual fee
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