DE102004040465A1 - Paketanordnung für elektronische Einrichtung und Verfahren zum Herstellen der Paketanordnung - Google Patents
Paketanordnung für elektronische Einrichtung und Verfahren zum Herstellen der Paketanordnung Download PDFInfo
- Publication number
- DE102004040465A1 DE102004040465A1 DE102004040465A DE102004040465A DE102004040465A1 DE 102004040465 A1 DE102004040465 A1 DE 102004040465A1 DE 102004040465 A DE102004040465 A DE 102004040465A DE 102004040465 A DE102004040465 A DE 102004040465A DE 102004040465 A1 DE102004040465 A1 DE 102004040465A1
- Authority
- DE
- Germany
- Prior art keywords
- package assembly
- manufacturing
- electronic device
- buffer layer
- avoided
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 abstract 3
- 238000012858 packaging process Methods 0.000 abstract 1
- 238000012856 packing Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/058—Holders; Supports for surface acoustic wave devices
- H03H9/059—Holders; Supports for surface acoustic wave devices consisting of mounting pads or bumps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
- H03H9/1078—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a foil covering the non-active sides of the SAW device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05568—Disposition the whole external layer protruding from the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05573—Single external layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16235—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a via metallisation of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8112—Aligning
- H01L2224/81136—Aligning involving guiding structures, e.g. spacers or supporting members
- H01L2224/81138—Aligning involving guiding structures, e.g. spacers or supporting members the guiding structures being at least partially left in the finished device
- H01L2224/8114—Guiding structures outside the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/812—Applying energy for connecting
- H01L2224/81201—Compression bonding
- H01L2224/81205—Ultrasonic bonding
- H01L2224/81207—Thermosonic bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
- H01L2224/81801—Soldering or alloying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01068—Erbium [Er]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19042—Component type being an inductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19043—Component type being a resistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Acoustics & Sound (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Erfindungsgemäß werden eine Pufferschicht auf einem Substrat gebildet und dann elektronische Einrichtungen auf die Pufferschicht gepackt, und Probleme einer geringen hermetischen Abdichtung und eines komplexen Prozesses nach dem Stand der Technik können vermieden werden. Die Erfindung liefert eine Packungsstruktur und ein Packungsverfahren mit einer besseren hermetischen Abdichtung und einem einfacheren Prozeß. Mittels der Pufferschicht können insbesondere die Planarisierung für Flip-Chip-Bonden verbessert und negative Effekte des Packungsprozesses vermieden werden.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/671,334 US7239023B2 (en) | 2003-09-24 | 2003-09-24 | Package assembly for electronic device |
US10/671,334 | 2003-09-24 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE102004040465A1 true DE102004040465A1 (de) | 2005-05-04 |
DE102004040465B4 DE102004040465B4 (de) | 2009-07-30 |
Family
ID=34313921
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE102004040465A Active DE102004040465B4 (de) | 2003-09-24 | 2004-08-20 | Gehäuseanordnung für elektronische Bauelemente und Verfahren zum Verpacken elektronischer Bauelemente |
Country Status (3)
Country | Link |
---|---|
US (1) | US7239023B2 (de) |
CN (1) | CN1300843C (de) |
DE (1) | DE102004040465B4 (de) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102007058951A1 (de) * | 2007-12-07 | 2009-06-10 | Epcos Ag | MEMS Package |
DE102008025202A1 (de) * | 2008-05-27 | 2009-12-10 | Epcos Ag | Hermetisch geschlossenes Gehäuse für elektronische Bauelemente und Herstellungsverfahren |
DE102008030843A1 (de) * | 2008-06-30 | 2009-12-31 | Osram Opto Semiconductors Gmbh | Optoelektronische Anordnung sowie Verfahren zur Herstellung einer optoelektronischen Anordnung |
DE102010054782A1 (de) * | 2010-12-16 | 2012-06-21 | Epcos Ag | Gehäustes elektrisches Bauelement |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU2003228512A1 (en) * | 2002-04-10 | 2003-10-27 | Instasolv, Inc. | Method and system for managing computer systems |
US7397067B2 (en) | 2003-12-31 | 2008-07-08 | Intel Corporation | Microdisplay packaging system |
DE102004005668B4 (de) * | 2004-02-05 | 2021-09-16 | Snaptrack, Inc. | Elektrisches Bauelement und Herstellungsverfahren |
KR20060115095A (ko) * | 2005-05-04 | 2006-11-08 | 삼성전기주식회사 | 기밀특성이 우수한 표면탄성파 소자 패키지 |
KR100691160B1 (ko) * | 2005-05-06 | 2007-03-09 | 삼성전기주식회사 | 적층형 표면탄성파 패키지 및 그 제조방법 |
US20070015300A1 (en) * | 2005-07-15 | 2007-01-18 | Yu-Chuan Liu | Method for fabricating a light-emitting device |
KR100722635B1 (ko) * | 2005-09-27 | 2007-05-28 | 삼성전기주식회사 | 와이어 본딩 패드면과 볼패드면의 회로층이 다른 두께를갖는 반도체 패키지 기판 및 그 제조방법 |
US8283756B2 (en) * | 2007-08-20 | 2012-10-09 | Infineon Technologies Ag | Electronic component with buffer layer |
JP5537081B2 (ja) | 2009-07-28 | 2014-07-02 | 浜松ホトニクス株式会社 | 加工対象物切断方法 |
US8021930B2 (en) | 2009-08-12 | 2011-09-20 | Stats Chippac, Ltd. | Semiconductor device and method of forming dam material around periphery of die to reduce warpage |
US8143110B2 (en) * | 2009-12-23 | 2012-03-27 | Intel Corporation | Methods and apparatuses to stiffen integrated circuit package |
TWI427753B (zh) * | 2010-05-20 | 2014-02-21 | Advanced Semiconductor Eng | 封裝結構以及封裝製程 |
JP6116120B2 (ja) * | 2012-01-24 | 2017-04-19 | 太陽誘電株式会社 | 弾性波デバイス及び弾性波デバイスの製造方法 |
US8575767B1 (en) * | 2012-10-06 | 2013-11-05 | Ixys Corporation | Reflow of thermoplastic sheet for passivation of power integrated circuits |
KR102003881B1 (ko) * | 2013-02-13 | 2019-10-17 | 삼성전자주식회사 | 반도체 소자 및 그 제조 방법 |
US9622356B2 (en) | 2013-03-14 | 2017-04-11 | Lockheed Martin Corporation | Electronic package mounting |
TWI575682B (zh) * | 2015-04-02 | 2017-03-21 | 南茂科技股份有限公司 | 晶片封裝結構及堆疊式晶片封裝結構 |
DE102015109764A1 (de) * | 2015-06-18 | 2016-12-22 | Infineon Technologies Ag | Eine Laminarstruktur, ein Halbleiterbauelementund Verfahren zum Bilden von Halbleiterbauelementen |
US10689248B2 (en) * | 2017-03-16 | 2020-06-23 | Advanced Semiconductor Engineering, Inc. | Semiconductor device package and method of manufacturing the same |
DE102017212796A1 (de) * | 2017-07-26 | 2019-01-31 | Robert Bosch Gmbh | Elektrische Baugruppe |
WO2020047315A1 (en) | 2018-08-30 | 2020-03-05 | Skyworks Solutions, Inc. | Packaged surface acoustic wave devices |
CN111003682A (zh) * | 2018-10-08 | 2020-04-14 | 凤凰先驱股份有限公司 | 电子封装件及其制法 |
CN110542455B (zh) * | 2019-09-16 | 2021-11-05 | 中北大学 | 一种压力/振动同步测量的htcc复合微传感器及其制备方法 |
US11244876B2 (en) | 2019-10-09 | 2022-02-08 | Microchip Technology Inc. | Packaged semiconductor die with micro-cavity |
Family Cites Families (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4545610A (en) * | 1983-11-25 | 1985-10-08 | International Business Machines Corporation | Method for forming elongated solder connections between a semiconductor device and a supporting substrate |
GB8727926D0 (en) * | 1987-11-28 | 1987-12-31 | British Aerospace | Surface mounting leadless components on conductor pattern supporting substrates |
US5120678A (en) * | 1990-11-05 | 1992-06-09 | Motorola Inc. | Electrical component package comprising polymer-reinforced solder bump interconnection |
US5136366A (en) * | 1990-11-05 | 1992-08-04 | Motorola, Inc. | Overmolded semiconductor package with anchoring means |
US5220200A (en) * | 1990-12-10 | 1993-06-15 | Delco Electronics Corporation | Provision of substrate pillars to maintain chip standoff |
US5557150A (en) * | 1992-02-07 | 1996-09-17 | Lsi Logic Corporation | Overmolded semiconductor package |
CA2089435C (en) * | 1992-02-14 | 1997-12-09 | Kenzi Kobayashi | Semiconductor device |
US5834339A (en) * | 1996-03-07 | 1998-11-10 | Tessera, Inc. | Methods for providing void-free layers for semiconductor assemblies |
US5523628A (en) * | 1994-08-05 | 1996-06-04 | Hughes Aircraft Company | Apparatus and method for protecting metal bumped integrated circuit chips during processing and for providing mechanical support to interconnected chips |
US5633535A (en) * | 1995-01-27 | 1997-05-27 | Chao; Clinton C. | Spacing control in electronic device assemblies |
US5659203A (en) * | 1995-06-07 | 1997-08-19 | International Business Machines Corporation | Reworkable polymer chip encapsulant |
JP3825475B2 (ja) * | 1995-06-30 | 2006-09-27 | 株式会社 東芝 | 電子部品の製造方法 |
JP3982876B2 (ja) * | 1997-06-30 | 2007-09-26 | 沖電気工業株式会社 | 弾性表面波装置 |
JP3196693B2 (ja) * | 1997-08-05 | 2001-08-06 | 日本電気株式会社 | 表面弾性波装置およびその製造方法 |
US6324069B1 (en) * | 1997-10-29 | 2001-11-27 | Hestia Technologies, Inc. | Chip package with molded underfill |
US5942798A (en) * | 1997-11-24 | 1999-08-24 | Stmicroelectronics, Inc. | Apparatus and method for automating the underfill of flip-chip devices |
DE19806818C1 (de) | 1998-02-18 | 1999-11-04 | Siemens Matsushita Components | Verfahren zur Herstellung eines elektronischen Bauelements, insbesondere eines mit akustischen Oberflächenwllen arbeitenden OFW-Bauelements |
JPH11239037A (ja) * | 1998-02-20 | 1999-08-31 | Nec Corp | 弾性表面波装置 |
US5969461A (en) * | 1998-04-08 | 1999-10-19 | Cts Corporation | Surface acoustic wave device package and method |
JP2000114918A (ja) * | 1998-10-05 | 2000-04-21 | Mitsubishi Electric Corp | 表面弾性波装置及びその製造方法 |
JP2000299330A (ja) * | 1999-04-14 | 2000-10-24 | Matsushita Electric Ind Co Ltd | ベアチップ実装基板、ベアチップ実装方法及びベアチップ実装装置 |
US6516104B1 (en) * | 1999-06-25 | 2003-02-04 | Kabushiki Kaisha Toshiba | Optical wiring device |
US6448635B1 (en) * | 1999-08-30 | 2002-09-10 | Amkor Technology, Inc. | Surface acoustical wave flip chip |
FR2799883B1 (fr) * | 1999-10-15 | 2003-05-30 | Thomson Csf | Procede d'encapsulation de composants electroniques |
US6214650B1 (en) * | 2000-02-01 | 2001-04-10 | Lockheed Martin Corporation | Method and apparatus for sealing a ball grid array package and circuit card interconnection |
JP3631956B2 (ja) * | 2000-05-12 | 2005-03-23 | 富士通株式会社 | 半導体チップの実装方法 |
KR100443504B1 (ko) * | 2001-06-12 | 2004-08-09 | 주식회사 하이닉스반도체 | 볼 그리드 어레이 패키지 구조 및 그 제조방법 |
DE10136743B4 (de) | 2001-07-27 | 2013-02-14 | Epcos Ag | Verfahren zur hermetischen Verkapselung eines Bauelementes |
JP3860000B2 (ja) * | 2001-09-07 | 2006-12-20 | Necエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP4000960B2 (ja) * | 2001-10-19 | 2007-10-31 | 株式会社村田製作所 | 分波器、通信装置 |
KR100431180B1 (ko) * | 2001-12-07 | 2004-05-12 | 삼성전기주식회사 | 표면 탄성파 필터 패키지 제조방법 |
JP3891838B2 (ja) * | 2001-12-26 | 2007-03-14 | 株式会社ルネサステクノロジ | 半導体装置およびその製造方法 |
JP3956199B2 (ja) * | 2002-02-20 | 2007-08-08 | シャープ株式会社 | 固体撮像装置の製造方法およびその製造方法において使用するマスク |
US7047633B2 (en) * | 2003-05-23 | 2006-05-23 | National Starch And Chemical Investment Holding, Corporation | Method of using pre-applied underfill encapsulant |
US20050056946A1 (en) * | 2003-09-16 | 2005-03-17 | Cookson Electronics, Inc. | Electrical circuit assembly with improved shock resistance |
-
2003
- 2003-09-24 US US10/671,334 patent/US7239023B2/en not_active Expired - Lifetime
-
2004
- 2004-08-20 DE DE102004040465A patent/DE102004040465B4/de active Active
- 2004-09-02 CN CNB2004100686987A patent/CN1300843C/zh not_active Expired - Fee Related
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102007058951A1 (de) * | 2007-12-07 | 2009-06-10 | Epcos Ag | MEMS Package |
DE102007058951B4 (de) * | 2007-12-07 | 2020-03-26 | Snaptrack, Inc. | MEMS Package |
DE102008025202A1 (de) * | 2008-05-27 | 2009-12-10 | Epcos Ag | Hermetisch geschlossenes Gehäuse für elektronische Bauelemente und Herstellungsverfahren |
DE102008025202B4 (de) * | 2008-05-27 | 2014-11-06 | Epcos Ag | Hermetisch geschlossenes Gehäuse für elektronische Bauelemente und Herstellungsverfahren |
DE102008030843A1 (de) * | 2008-06-30 | 2009-12-31 | Osram Opto Semiconductors Gmbh | Optoelektronische Anordnung sowie Verfahren zur Herstellung einer optoelektronischen Anordnung |
DE102008030843B4 (de) | 2008-06-30 | 2021-08-19 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronische Anordnung sowie Verfahren zur Herstellung einer optoelektronischen Anordnung |
DE102010054782A1 (de) * | 2010-12-16 | 2012-06-21 | Epcos Ag | Gehäustes elektrisches Bauelement |
WO2012079927A1 (de) * | 2010-12-16 | 2012-06-21 | Epcos Ag | Gehäustes elektrisches bauelement |
US9844128B2 (en) | 2010-12-16 | 2017-12-12 | Snaptrack, Inc. | Cased electrical component |
US10154582B2 (en) | 2010-12-16 | 2018-12-11 | Snaptrack, Inc. | Method for producing a cased electrical component |
Also Published As
Publication number | Publication date |
---|---|
US20050062167A1 (en) | 2005-03-24 |
CN1645599A (zh) | 2005-07-27 |
US7239023B2 (en) | 2007-07-03 |
CN1300843C (zh) | 2007-02-14 |
DE102004040465B4 (de) | 2009-07-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE102004040465A1 (de) | Paketanordnung für elektronische Einrichtung und Verfahren zum Herstellen der Paketanordnung | |
WO2020231545A8 (en) | Package structure and fabrication methods | |
HK1149631A1 (en) | Wafer level packaging using flip chip mounting | |
WO2016209668A3 (en) | Structures and methods for reliable packages | |
SG171518A1 (en) | Semiconductor device and method of forming protective material between semiconductor die stacked on semiconductor wafer to reduce defects during singulation | |
CN104201189B (zh) | 一种有机发光显示装置及有机发光二极管的封装方法 | |
TW200717862A (en) | Method of removing the growth substrate of a semiconductor light-emitting device | |
TW200713528A (en) | Semiconductor device and a manufacturing method of the same | |
ATE551722T1 (de) | Verkapseltes halbleiterprodukt und verfahren zu seiner herstellung | |
ATE509378T1 (de) | Verkapselte vorrichtungen und herstellungsverfahren dafür | |
SG165235A1 (en) | Semiconductor device and method of providing z-interconnect conductive pillars with inner polymer core | |
CN102903642A (zh) | 一种将芯片底部和周边包封的芯片级封装方法 | |
WO2009142391A3 (ko) | 발광소자 패키지 및 그 제조방법 | |
TW200623350A (en) | Filling paste structure and process for wl-csp | |
EP2610905A3 (de) | Verpackungsverfahren für elektronische Komponenten unter Verwendung eines dünnen Substrats | |
CN105510526B (zh) | 具有框架通路的气体传感器设备和相关方法 | |
US20130119538A1 (en) | Wafer level chip size package | |
US8486803B2 (en) | Wafer level packaging method of encapsulating the bottom and side of a semiconductor chip | |
ATE551720T1 (de) | Weiterverteilungsschicht für die waferebenen- kapselung auf chipmassstab und verfahren dafür | |
EP2477244A3 (de) | Verpackung für lichtemittierende Vorrichtung auf Waferebene und Verfahren zu deren Herstellung | |
MY154178A (en) | Optoelectronic part producing method,optoelectronic part producing system,and optoelectronic part | |
EP2952886A8 (de) | Herstellungsverfahren für Gassensorpaket | |
EP2947683A3 (de) | Rekonstituiertes interposer-halbleitergehäuse | |
TW200715503A (en) | Semiconductor packaging process and carrier for semiconductor package | |
TW200729429A (en) | Semiconductor package structure and fabrication method thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
OP8 | Request for examination as to paragraph 44 patent law | ||
8125 | Change of the main classification |
Ipc: H01L 23/12 AFI20051017BHDE |
|
8364 | No opposition during term of opposition |