DE102005043910A1 - Flip-chip module comprises a semiconductor chip having contact columns on a surface, a substrate with contact sites joined to the free ends of the contact columns and a rigid spacer arranged between the substrate and chip - Google Patents

Abstract

Flip-chip module comprises a semiconductor chip (2) having contact columns (4) on a surface (3), a substrate (8) with contact sites (7) joined to the free ends of the contact columns and a rigid spacer (10) arranged between the substrate and chip. The spacer and substrate are connected to each other at sites distributed over its contact surfaces. An independent claim is also included for a method for producing a flip-chip module.

Description

The The invention relates to a flip-chip module and a method for generating Such a flip-chip module, wherein the flip-chip module, a semiconductor chip, the on a surface provided with contact posts is, and includes a substrate, and contact points of the substrate with free ends of the contact posts soldered are.

Such a flip-chip module is out of the US 6,578,754 B1 known. The contact posts consist of a section containing substantially copper and a shorter section consisting of the solder material associated with the contact pads of the substrate. The length of the copper section is at least 50 microns. With these contact columns contact points should be contactable, which are arranged in a regular grid whose pitch is less than 100 microns, preferably in the range of 80 to 100 microns. By providing defined contact columns, considerable advantages are achieved in comparison to conventional flip-chip modules, which lie in the fact that the risk of a short circuit between adjacent contact points is far lower than with conventional flip-chip modules, in which alone spherical contact elements made of solder material, the connection between the substrate and the semiconductor chip is accomplished. Therefore, it is possible to reliably contact pads in a pitch of less than 100 μm.

It will also be on the US 6,550,666 B2 and the US 6,592,019 B2 referenced, in which further embodiments of the above-described flip-chip module are set forth.

Farther This flip-chip module has all the advantages of conventional Flip-chip modules opposite wire connections (Wire-bonding). In particular, the path of the electrical line between the semiconductor chip and the substrate and thus the signal path very short.

As it is already in the US 6,578,754 B1 and the US 6,592,019 B2 can lead to considerable shear stresses between the substrate and the semiconductor chip, which can even lead to distortion on the semiconductor chip and on the substrate (see, for example, US Pat. 4a of the US 6,578,754 B1 ).

Also in the US 6,592,019 B2 Shear voltages within the flip-chip module are explained. These shear stresses are caused by different thermal expansion coefficients between the semiconductor chip and the substrate, since when soldering the contact columns with the substrate, the entire module is placed in a Lötoffen and, for example, heated to about 230 ° C. At this temperature, the solder melts and connects the contact posts to the corresponding pads of the substrate. The temperature is then lowered, wherein approximately at 200 ° C, the solder solidifies. As the temperature is further lowered to room temperature, the substrate contracts stronger than the semiconductor chip, causing strains in the flip-chip module.

This As a result, in such flip-chip modules with a variety of contact columns due to the voltages within the flip-chip module the solder joints between the contact columns and the substrate break up or Kontaksäulen from the semiconductor chip can break out or even the semiconductor chip can be damaged. Therefore it is not possible large semiconductor chips, such as For example, to provide DRAM memory chips in such a flip-chip module.

however There is a considerable need for DRAM memory chips by means of a Flip-chip module directly without the detour of an additional one Wiring level to contact, firstly because of the variety the connection the conventional one Contact by wires virtually impossible to carry out is and the other desired Data transfer rates with conventional Wire connections not possible are.

The Contact points of these DRAM memory chips are at a pitch less than 100 μm arranged, which is referred to in the jargon as "fine pitch". Such a fine pitch can be contacted with the contact columns explained above become. conventional Contacting technologies for Flip-chip modules are not suitable for this purpose. Furthermore, it has to be considered that for the interconnects within the chip are increasingly materials with lower dielectricity (low k passivation materials) that are mechanically weak why a force applied to such a semiconductor chip mechanical Tension to cracks and breaks in the passivation layer leads. Current semiconductor chips are thus very susceptible to voltage, which their use in the above-mentioned flip-chip module with Contact columns difficult.

The invention has for its object to further develop a flip-chip module with the contact columns explained above so that fewer errors are caused by the tension within the flip-chip module. Another object of the invention is to provide a method for producing such a flip-chip module fen.

The The object is achieved by a flip-chip module with the features of the claim 1 and solved by a method having the features of claim 16. advantageous Embodiments of the invention are specified in the respective subclaims.

• – einen Halbleiterchip, der an einer Fläche Kontaktsäulen aufweist, die etwa senkrecht zu dieser Fläche angeordnet sind,
• – ein Substrat, das Kontaktstellen aufweist, die mit jeweils einem freien Ende einer der Kontaktsäulen verbunden sind, wobei das Substrat einen anderen thermischen Ausdehnungskoeffizienten als der Halbleiterchip aufweist, und
• – einen Abstandshalter, der zwischen dem Substrat und dem Halbleiterchip angeordnet ist und dessen thermischer Ausdehnungskoeffizienten sich weniger von dem thermischen Ausdehnungskoeffizienten des Halbleiterchips als von dem thermischen Ausdehnungskoeffizienten des Substrates unterscheidet, wobei, der Abstandshalter und das Substrat zumindest an mehreren über ihren Kontaktflächen verteilten Stellen miteinander verbunden sind.

The flip-chip module according to the invention comprises

• A semiconductor chip having contact pillars on a surface, which are arranged approximately perpendicular to this surface,
• A substrate having contact points connected to a respective free end of one of the contact pillars, the substrate having a different thermal expansion coefficient than the semiconductor chip, and
• A spacer which is arranged between the substrate and the semiconductor chip and whose coefficient of thermal expansion differs less from the coefficient of thermal expansion of the semiconductor chip than from the coefficient of thermal expansion of the substrate, wherein the spacer and the substrate at least at a plurality of points distributed over their contact surfaces with each other are connected.

There the spacer is connected to the substrate and the thermal Expansion coefficient of the spacer closer to the thermal expansion coefficient of the semiconductor chip as the thermal expansion coefficient of the substrate, the tensions occur between the substrate and the spacer and not between the substrate and the semiconductor chip on. The spacer thus decreases by the different thermal expansion caused strain of the substrate. The spacer, which does not have any electrical functional elements has, is stiff, so that this tension is not on be transmitted to the sensitive semiconductor chip.

The Substrate, usually from a provided with copper interconnects plastic or ceramic material is formed, it is so stable that it is these mechanical stresses can record permanently. Because of the substrate and the spacer existing unit is much stiffer than the substrate alone, The tension does not cause any or significantly fewer bends produced in the substrate, whereby the mechanical stress of solder joints between the contact columns and the substrate substantially lower than in the previously known Flip-chip modules is.

By the provision of the rigid spacers will risk damaging the solder joints between the contact columns and the substrate and the risk of damage to the semiconductor chip significantly reduced.

Preferably For example, the spacer and the semiconductor chip are distributed at least at a plurality over their contact surfaces Connect with each other. Through the mechanical connection between the semiconductor chip and the spacer, respectively a similar one have thermal expansion coefficient, the semiconductor chip also during the the soldering process occurring temperature changes held in shape and there will be any curvature counteracted. The deviations of the thermal expansion coefficient of the spacer with respect to the thermal expansion coefficient of the semiconductor chip are preferably less than 40% and in particular less than 20% or 10% of the difference between the thermal expansion coefficient of the semiconductor chip and the thermal expansion coefficient of the substrate. The better the thermal expansion coefficient between the semiconductor chip and the spacer match, the smaller are those occurring on the semiconductor chip, through the thermal stress caused forces.

At the inventive method To generate a flip-chip module, a spacer is first inserted between the semiconductor chip and the substrate is arranged and then the Soldering the Contact columns executed with the contact points of the substrate.

hereby the distance between the substrate and the semiconductor chip becomes exact set. This distance is intended to be the average height of all contact columns including theirs solder joints correspond.

The Inventors of the present invention have found that in the previously known method has the problem that the distance either too short or between the substrate and the semiconductor chip is too long. If the distance is too short, the solder becomes from the intermediate area between the contact column and the corresponding one Pad of the substrate pushed out, so that only one very thin Bonding layer of soldering material between the contact column and the contact point remains. This thin connection layer is However, they are mechanically weak, making them fast in case of tension can break up.

If the distance between the semiconductor chip and the substrate is too large, the result is a correspondingly large gap between the contact column and the contact point of the substrate. Through this gap, the solder material is stretched, resulting in Resulting constrictions at the solder joint. Such constrictions, in turn, are mechanically weak and prone to rupture under stress. This means that both too large and too small distances between the semiconductor chip and the substrate mechanically weak solder joints are generated, which tend to thermal breakup in the flip-chip module to break up.

By the inventive method the distance between the semiconductor chip and the substrate becomes very large exactly adhered to, which considerably reduces the risk that mechanically weak solder joints be generated. Thus, with the method of the invention produced flip-chip module absorb thermal stresses better and the risk of damage of the flip-chip module is significantly reduced.

Preferably will be explained above Flip-chip module according to the invention with the spacer coupled to the substrate in the method according to the invention produced.

The Invention will become more apparent below explained by way of example with reference to the drawings. The drawings show in:

1a to 1c schematically in cross section the steps of assembling a flip-chip module according to the invention;

2a to 2c in each case a section through a flip-chip module according to the invention in the region of a solder joint, wherein during the Lötvorgan ges different distances between the respective substrate and the semiconductor chip have been complied with;

3a and 3b each schematically a semiconductor chip with contact pillars and a spacer in a view from below;

4a an inventive flip-chip module in plan view; and

4b the flip-chip module off 4a in a sectional view along the line AA.

An inventive flip-chip module 1 ( 1c ) comprises a semiconductor chip 2 that is on a side surface 3 I / O has contact points. At the I / O pads are contact posts 4 arranged, each perpendicular to the side surface 3 stand.

These contact posts are generated according to a method as described in US Pat US 6,578,754 B1 ; US 6,550,666 B2 or the US 6,592,019 B2 is described. It is therefore incorporated herein by reference in its entirety and incorporated in the present application.

The contact columns 4 are formed of two sections, namely a metal column 5 and a soldering section 6 ( 1a ). The metal column 5 is mainly made of copper and / or gold, is directly on the semiconductor chip 2 arranged and is in electrical contact with a conductor track of the semiconductor chip 2 , The soldering sections 6 are at the of the semiconductor chip 2 distant ends of the contact posts 4 arranged and serve for mechanical and electrical connection with contact points 7 of a substrate 8th , As long as the contact columns 4 not with the contact points 7 of the substrate 8th soldered form the soldering sections 6 free ends of the contact columns 4 ( 1a . 1b ).

The solder material of the soldering sections 6 is for example a tin / lead alloy or may also be a lead-free solder material.

That in the 1a to 1c illustrated embodiment has a contact area 9 on, in which the contact columns 4 are arranged and the center of the semiconductor chip 2 is trained. In the 1a to 1c are shown only to simplify the representation of three contact columns. Typically, semiconductor chips of a flip-chip module according to the invention have between 40 and 200 contact posts. It has been shown that with the flip-chip module according to the invention semiconductor chips with more than 100 or more than 200 or more than 500 or up to a few thousand contact columns can be contacted directly on a substrate. The center distance between two adjacent contact columns 4 is typically 20 μm to 200 μm. The contact posts may be arranged in one or more rows along a center-pinning line or in one or more rows along the edges of the semiconductor die

In the in the 1a to 1c illustrated method for generating a flip-chip module according to the invention is first in a first step ( 1a ) a spacer 10 adjacent to the contact posts 4 arranged, with respect to the contact columns 4 aligned and with the side surface 3 of the semiconductor chip 2 connected. The connection between the spacer 10 and the semiconductor chip 2 done by gluing, with the spacer 10 possibly on the entire contact surface with the semiconductor chip 2 be glued to this. Instead of an adhesive connection and a solder joint can be provided. It is not necessary to perform the connection over the entire surface. It may also be appropriate to individual over the pads distributed dots the spacer 10 with the semiconductor chip 2 connect to.

When connecting the spacer 10 with the semiconductor chip 2 this is still part of a wafer. After the spacer 10 with the wafer or the semiconductor chip 2 is connected, the semiconductor chip is cut from the wafer by a conventional cutting method (not shown). The resulting assembly comprising the semiconductor chip 2 and the spacer 10 , is on the substrate 8th ( 1b ) with the free ends of the contact posts 4 or with the soldering sections 6 on the contact points 7 of the substrate.

The contact points 7 are pre-treated solderable copper contacts. The substrate 8th with the spacer arranged thereon 10 and semiconductor chip 2 is placed in a Lötoffen in which the entire assembly via a temperature profile to a brazing temperature of z. B. 230 ° C is heated. As a result, the soldering material melts the soldering sections 6 and wets both the lower ends of the metal columns 5 of the semiconductor chip 2 as well as the contact points 7 of the substrate 8th , Upon cooling, the solder material solidifies and thus permanently connects both electrically and mechanically the contact columns 4 of the semiconductor chip 2 with the contact points 7 of the substrate 8th ( 1c ).

Preferably, at the same time as soldering, the spacer is also used 10 mechanically with the substrate 8th connected by means of an adhesive or solder joint. However, it is also possible that the connection between the spacer 10 and the substrate 8th before soldering is performed. The connection between the spacer 10 and the substrate 8th is suitably over the entire area of the contact surfaces of the spacer 10 with the substrate 8th educated.

By providing the spacer 10 between the substrate 8th and the semiconductor chip 2 During the soldering process, a predetermined distance between the substrate 8th and the semiconductor chip 2 exactly maintained. The height or thickness of the spacer is determined by means of a measurement of the metal column height after the manufacturing process. The provision of the spacer increases the quality of the solder joint substantially, as described below with reference to 2a to 2c which each show a flip-chip module in the region of a contact column.

In 2a is the distance between the semiconductor chip 2 and the substrate 8th too small during the soldering process. As a result, an essential part of the soldering material from the area between the contact point 7 and the metal column 5 pushed out. This has the consequence that only a thin layer of solder between the contact point 7 and the metal column 5 located. This thin layer is mechanically weak and can easily break at the input voltages explained. In addition, there is a risk that soldering material over the contact point 7 out and comes into contact with an adjacent copper track. This creates a short circuit

On the other hand, is the distance between the semiconductor chip 2 and the substrate 8th too large ( 2c ), then there is a correspondingly large gap between the metal column 5 and the contact point 7 of the substrate 8th , Through this gap, the solder material is stretched, resulting in a constriction 11 results. This constriction is again mechanically weak and tends to break up under mechanical stress. An alloy forms between the solder material and the copper of the contact pillar or of the substrate. This alloy is initially a good electrical conductor and immediately after the production of the flip-chip module can not be determined by means of electrical tests that there is such an alloy here. However, when an electric current is applied, the constituents of the alloy can preferably separate in the area of the constriction, whereby the cross-section of the conductor tracks can be further reduced or the electrical connections can even be interrupted. In addition, the material becomes brittle over time (Kirkendale voids).

When the distance between the semiconductor chip 2 and the substrate 8th is set correctly, results in a mechanically stable solder joint between the contact column 4 and the contact point 7 of the substrate 8th ( 2 B ). By providing the spacer according to the invention 10 between the substrate 8th and the semiconductor chip 2 Thus solder joints are obtained in the desired quality. For this it is not necessary that the spacer 10 mechanically with the substrate and / or the semiconductor chip 2 However, such a mechanical connection is preferred, as will be explained in more detail below.

The spacer 10 is made of a stiff material, such. As fiber-reinforced plastic or a coated steel alloy (Invar ^® ) formed with a low coefficient of thermal expansion. Suitable reinforcing fibers for the fiber-reinforced plastic are carbon fibers and aramid fibers ( ^Kevlar® ).

The material of the spacer has a coefficient of thermal expansion that differs less from the thermal expansion coefficient of the semiconductor chip than from the thermal expansion coefficient of the substrate. That is, the thermal expansion of the Ab stand holder 10 rather the semiconductor chip 2 as the substrate 8th equivalent. Is the spacer 10 mechanically to the substrate 8th coupled, so are the thermal stresses between the substrate and the spacer 10 from the spacer 10 taken and not on the semiconductor chip 2 transfer. The spacer 10 has no electrical functional elements and is made of a rigid material, so that the thermal stresses lead to no or at most slight distortion. The substrate 8th is usually made of one with copper conductor tracks 12 formed plastic or ceramic material is formed, which is so stable that it can absorb these mechanical stresses permanently. Although thermal stresses exist between the substrate and the spacer, they do not interfere with the continuous operation of the flip-chip module of the present invention.

To that forms the from the substrate 8th and the spacer 10 existing unit such a rigid body that no or at most slight curvatures can occur in the substrate.

So that the spacer 10 must absorb the generated thermal stresses, he must mechanically to the substrate 8th be coupled. This coupling is preferably carried out with a flat adhesive connection. However, it is sufficient in principle that the spacer 10 and the substrate 8th are connected to each other at least at several distributed over their contact areas.

Preferably, the spacer are also 10 and the semiconductor chip 2 connected to each other at least at several distributed over their contact areas. Due to the mechanical connection between the semiconductor chip 2 and the spacer 10 , each having a similar thermal expansion coefficient, the semiconductor chip 2 Even in the temperature changes occurring during the soldering process held in its form and it is counteracted possible curvatures.

The deviation of the thermal expansion coefficient of the spacer with respect to the thermal expansion coefficient of the semiconductor chip are preferably less than 40% and in particular less than 20% or 10% and 5% of the difference between the thermal expansion coefficient of the semiconductor chip 2 and the thermal expansion coefficient of the substrate 8th , The better the thermal expansion coefficients of the semiconductor chip 2 and the spacer 10 match, the lower are those on the semiconductor chip 2 occurring forces caused by the thermal stresses.

So Thermal expansion coefficients typically result for the Spacers 10 to 100 times smaller than the substrate, which is, for example, an epoxy-glass fiber circuit board.

With the spacer according to the invention 10 at least mechanically to the substrate 8th coupled, the curvatures in the flip-chip module according to the invention as in known flip-chip modules are reduced or even completely avoided, whereby the risk of damage to the solder joints between the contact posts 4 and the substrate 8th or damage to the semiconductor chip 2 be significantly reduced. This makes it possible, even semiconductor chips that are sensitive to mechanical stresses, such. As the newest generation of DRAM memory chips to connect by means of contact columns electrically and mechanically with a substrate. The flip-chip module according to the invention is suitable for semiconductor chips with up to a few thousand contact columns.

The in the 1a and 1b shown semiconductor chip 2 is in the 3a in a view from below together with the spacer 10 shown. It can be seen that this spacer has a frame around the contact area 9 forms, in which the contact columns 4 are arranged. This frame is formed in one piece.

Within the scope of the invention it is also possible the spacer 10 form of several separate parts, the distance or even adjacent to each other on the semiconductor chip 2 be provided. 3b shows an alternative Ausfüh tion form, wherein the contact columns 4 circumferentially on the edge of the semiconductor chip 2 are arranged and centrally a rectangular spacer 10 is provided.

4a shows a further embodiment of a flip-chip module according to the invention 1 in the plan view. 4b shows a section along the line AA in 4a , This flip-chip module 1 in turn has a semiconductor chip 2 a spacer 10 , a substrate 8th and contact columns 4 connected to corresponding contact points of the substrate 8th mechanically and electrically connected. This flip-chip module is characterized in that the spacer 10 on the side of the semiconductor chip 2 protrudes and a circumferential, upward projection 13 has, which then the side edges of the semiconductor chip 2 encloses. The lead 13 is preferably in front of the surface of the semiconductor chip, so that the spacer 10 forms a basin in which the semiconductor chip 2 can be cast with a synthetic resin. As a result, the semiconductor chip 2 through the spacer 10 laterally protected. Within the scope of the invention it is possible to also provide a cover which either directly on the semiconductor chip 2 is glued or mechanically to the semiconductor chip 2 laterally projecting spacer 10 is connected.

The above-explained flip-chip modules according to the invention can be placed as a unit on a printed circuit board, wherein located on the circuit board pads are electrically connected. With such use of the flip-chip module, the substrates become 8th referred to as "chip carrier", which at the semiconductor chip 2 pointing surface a grid of contact points 7 in the fine pitch and on the semiconductor chip 2 opposite side contact points 14 in a coarser grid. One contact point each 14 is with a contact point 7 electrically connected. The contact points 14 can be electrically and mechanically connected by conventional soldering with provided in a corresponding grid on a circuit board pads. The substrate 8th serves as a kind of translation from a contact point grid in fine pitch to a much coarser contact grid.

The Flip-chip modules according to the invention can also comprise a plurality of semiconductor chips, all on a common Substrate are arranged.

The flip-chip modules according to the invention are suitable especially for the production of SIMM modules (Single Inline Memory Modules) or DIMM modules (Dual Inline Memory Module). Such Flip-chip module is provided on the substrate with a connector strip, by means of which it by inserting in a corresponding mating connector strip a circuit board of a computer to be contacted with this can.

The invention can be briefly summarized as follows:
The invention relates to a flip-chip module with a contact-containing semiconductor chip, wherein the contact columns are electrically and mechanically connected to a substrate. Between the substrate and the semiconductor chip, a spacer is provided, which is mechanically coupled at least to the substrate. As a result, thermal stresses in the flip-chip module are absorbed by the spacer and prevented from the semiconductor chip.

Farther the invention relates to a method for producing a flip-chip module, being first a spacer between the semiconductor chip and the substrate is arranged and then the contact columns with the contact points soldered to the substrate become. With the provision of the spacer, the distance between the semiconductor chip and the substrate exactly adjusted, whereby the quality the solder joints be improved.

1

Flip-chip module

2

Semiconductor chip

3

side surface

4

Contact columns

5

metal column

6

soldering section

7

contact point

8th

substratum

9

contact area

10

spacer

11

constriction

12

Copper conductor

13

head Start

14

contact point

Claims (20)

Flip-chip module comprising - a semiconductor chip ( 2 ) located on a surface ( 3 ) Contact columns ( 4 ) which is approximately perpendicular to this surface ( 3 ), - a substrate ( 8th ), the contact points ( 7 ), each having a free end of one of the contact columns ( 4 ), wherein the substrate ( 8th ) a different thermal expansion coefficient than the semiconductor chip ( 2 ), and - a rigid spacer ( 10 ) located between the substrate ( 8th ) and the semiconductor chip ( 2 ) and whose coefficient of thermal expansion is less of the thermal expansion coefficient of the semiconductor chip ( 2 ) as different from the thermal expansion coefficient of the substrate, wherein the spacer and the substrate are connected to each other at least at a plurality of distributed over their contact surfaces. Flip-chip module according to claim 1, characterized in that the spacer ( 10 ) and the substrate ( 8th ) are connected to each other flat at their contact surfaces. Flip-chip module according to claim 1 or 2, characterized in that the spacer ( 10 ) and the semiconductor chip ( 8th ) are connected to each other at their contact surfaces. Flip-chip module according to one of Claims 1 to 3, characterized in that a contact region ( 9 ), in which the contact columns ( 4 ) are arranged approximately centrally of the semiconductor chip ( 2 ), and the spacer ( 10 ) the contact area ( 9 ) encloses. Flip-chip module according to claim 4, characterized ge indicates that the spacer ( 10 ) at the edges of the semiconductor chip ( 2 ) and a circumferential lead ( 13 ) having. Flip-chip module according to one of Claims 1 to 3, characterized in that a contact region ( 9 ), in which the contact columns ( 4 ) are arranged, at the edge region of the semiconductor chip ( 2 ) is formed circumferentially, and the spacer ( 10 ) within the contact area ( 9 ) is arranged. Flip-chip module according to one of claims 1 to 6, characterized in that the deviation of the coefficient of thermal expansion of the spacer ( 10 ) with respect to the thermal expansion coefficient of the semiconductor chip ( 2 ) is less than 40% and preferably less than 20% of the difference between the thermal expansion coefficient of the semiconductor chip ( 2 ) and the thermal expansion coefficient of the substrate ( 8th ). Flip-chip module according to one of claims 1 to 7, characterized in that the spacer ( 10 ) is formed of fiber-reinforced plastic or a coated steel alloy with a low coefficient of thermal expansion. Flip-chip module according to one of claims 1 to 8, characterized in that the thickness of the spacer ( 10 ) about the average height of the contact column ( 4 ) and the respective solder joint corresponds. Flip-chip module according to one of claims 1 to 9, characterized in that the contact columns ( 4 ) are arranged in a regular grid and the distance between adjacent contact columns is less than or equal to 100 microns. Flip-chip module according to one of claims 1 to 10, characterized in that the number of contact columns ( 4 ) of the semiconductor chip ( 2 ) is at least 50, preferably at least 100 or 200. Flip-chip module according to one of Claims 1 to 11, characterized in that the contact pillars ( 4 ) from a metal column ( 5 ) and a soldering section ( 6 ), wherein the metal column ( 5 ) directly on the semiconductor chip ( 2 ) is arranged and the soldering portion ( 6 ) on the semiconductor chip ( 2 ) far end of the metal column ( 5 ) is trained. Flip-chip module according to claim 12, characterized in that the metal column ( 5 ) is formed essentially of copper and / or gold. Flip-chip module according to one of claims 1 to 13, characterized in that the substrate is made of a plastic or ceramic material is formed, provided on the conductor tracks are. Flip-chip module according to one of claims 1 to 14, characterized in that the flip-chip module comprises a plurality of semiconductor chips includes. Method for producing a flip-chip module with - a semiconductor chip ( 2 ) located on a surface ( 3 ) Contact columns ( 4 ) which is approximately perpendicular to this surface ( 3 ), - a substrate ( 8th ), the contact points ( 7 ), each having a free end of one of the contact columns ( 4 ) are to be soldered, characterized in that first a spacer ( 10 ) between the semiconductor chip ( 2 ) and the substrate ( 8th ) and then the contact posts ( 4 ) with the contact points ( 7 ) of the substrate are soldered. A method according to claim 16, characterized in that first the spacer ( 10 ) with the semiconductor chip ( 2 ) and the unit comprising the semiconductor chip ( 2 ) and the spacer ( 10 ) for soldering the contact columns ( 4 ) with the contact points ( 7 ) of the substrate ( 8th ) on the substrate ( 8th ) is arranged. A method according to claim 17, characterized in that simultaneously with the soldering of the contact columns ( 4 ) with the contact points ( 7 ) of the substrate ( 8th ) of spacers ( 10 ) with the substrate ( 8th ) is connected. Method according to claim 18, characterized in that the bonding between the substrate ( 8th ) and the spacer ( 10 ) is performed by soldering or gluing. Method according to one of Claims 16 to 19, characterized that a flip-chip module according to a the claims 1 to 15 is generated.