DE102005048482A1 - Method for coating electrically insulating surfaces by CVD or PVD e.g. for materials research, involves forming micro-heating elements on ceramic substrate - Google Patents
Method for coating electrically insulating surfaces by CVD or PVD e.g. for materials research, involves forming micro-heating elements on ceramic substrate Download PDFInfo
- Publication number
- DE102005048482A1 DE102005048482A1 DE200510048482 DE102005048482A DE102005048482A1 DE 102005048482 A1 DE102005048482 A1 DE 102005048482A1 DE 200510048482 DE200510048482 DE 200510048482 DE 102005048482 A DE102005048482 A DE 102005048482A DE 102005048482 A1 DE102005048482 A1 DE 102005048482A1
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- Germany
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- cvd
- pvd
- ceramic substrate
- substrate
- micro
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00349—Creating layers of material on a substrate
- B81C1/0038—Processes for creating layers of materials not provided for in groups B81C1/00357 - B81C1/00373
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5873—Removal of material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
- B81C2201/0176—Chemical vapour Deposition
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
- B81C2201/0181—Physical Vapour Deposition [PVD], i.e. evaporation, sputtering, ion plating or plasma assisted deposition, ion cluster beam technology
Abstract
Description
Die Erfindung betrifft ein Verfahren zur Beschichtung von elektrisch isolierenden Oberflächen mittels CVD (Chemical Vapour Depositon, chemische Dampfphasenabscheidung) oder PVD (Physical Vapour Deposition, physikalische Dampfphasenabscheidung). Sie betrifft weiterhin ein mittels CVD oder PVD beschichtetes Substrat mit einer elektrisch isolierenden Oberfläche und dessen Verwendung.The The invention relates to a method for the coating of electrical insulating surfaces by means of CVD (Chemical Vapor Deposit, Chemical Vapor Deposition) or PVD (Physical Vapor Deposition). It further relates to a CVD or PVD coated substrate with an electrically insulating surface and its use.
Miniaturisierte
Heizelemente oder Mikroheizelemente sind als Sensorelemente bekannt
und werden beispielsweise in der
Die
Aufgabe der Erfindung ist es, ein verbessertes Verfahren zur Beschichtung von elektrisch isolierenden Oberflächen mittels CVD oder PVD zu schaffen.task The invention is an improved process for coating of electrically insulating surfaces by CVD or PVD too create.
Diese Aufgabe wird erfindungsgemäß dadurch gelöst, daß vor dem CVD- bzw. PVD-Beschichtungsvorgang Mikroheizelemente auf einem keramischen Substrat ausgebildet werden, über die während des CVD- bzw. PVD-Beschichtungsvorgangs Energie auf der zu beschichtenden Oberfläche des Substrates freigesetzt wird.These Task is inventively characterized solved, that before the CVD or PVD coating process Micro heating elements are formed on a ceramic substrate, over the while the CVD or PVD coating process energy to be coated on the surface of the substrate is released.
Die Erfindung beruht auf der Erkenntnis, daß bei der CVD oder PVD die Oberflächentemperatur einen bedeutenden Einfluß auf die Mikrostruktur der aufgebrachten. Beschichtung hat. Mit dem von der Oberflächentemperatur abhängigen Kristallisationsgrad (z.B. amorph, polykristallin, monokristallin) können Materialeigenschaften (z.B. elektrische, mechanische und optische Größen) innerhalb eines weiten Bereiches variiert werden. Durch lokale Variation der Oberflächentemperatur während des CVD- bzw. PVD-Prozesses kann somit die Mikrostruktur der abgeschiedenen Schicht beeinflußt werden. Vorteile der auf einem keramischen Substrat mit sehr geringer Wärmeleitfähigkeit angeordneten Mikroheizelemente sind insbesondere geringe Wärmeverluste in das Substrat in vertikaler Richtung (geringe Heizleistung) und eine erhöhte örtliche Beschränkung in lateraler Richtung (im Hinblick auf das maskenlose Verfahren). Im Bereich der Mikroheizelemente ist der erzielte Grad der Kristallinität der aufgebrachten Beschichtung höher als in den übrigen Bereichen.The Invention is based on the finding that in the CVD or PVD the surface temperature a significant influence on the microstructure of the applied. Has coating. With the of the surface temperature dependent Degree of crystallinity (e.g., amorphous, polycrystalline, monocrystalline) can Material properties (e.g., electrical, mechanical and optical Sizes) within be varied over a wide range. By local variation of the surface temperature while of the CVD or PVD process can thus the microstructure of the deposited Layer affected become. Advantages of being on a ceramic substrate with very low thermal conductivity arranged micro heaters are in particular low heat losses in the substrate in the vertical direction (low heat output) and an increased local restriction in the lateral direction (with regard to the maskless method). In the field of micro heaters, the degree of crystallinity achieved is the one applied Coating higher than in the rest Areas.
Eine Weiterbildung der Erfindung besteht darin, daß nach dem CVD- bzw. PVD-Beschichtungsvorgang die Oberfläche des Substrates einem Ätzschritt unterzogen wird.A Development of the invention is that after the CVD or PVD coating process the surface of the substrate an etching step is subjected.
Da mit der oben angesprochenen höheren Kristallinität im Bereich der Mikroheizelemente auch die Ätzresistivität der dort aufgebrachten Beschichtung ansteigt, ist es möglich, durch einen nachfolgenden Ätzschritt die (amorphe oder zumindest feinkörnigere) Beschichtung in den übrigen Bereichen selektiv zu entfernen.There with the above-mentioned higher crystallinity in the range the micro heaters also the etch resistance of there applied coating increases, it is possible by a subsequent etching step the (amorphous or at least finer grained) coating in the remaining areas selectively remove.
Erfindungsgemäß ist vorgesehen, daß die Mikroheizelemente mittels Dünnfilmtechnologie oder mittels Dickfilmtechnologie hergestellt werden.According to the invention, it is provided that the micro heaters using thin-film technology or by thick film technology.
Bevorzugte Ausbildungen der Erfindung bestehen darin, daß als keramisches Substrat eine LTCC-Keramik (Low Temperature Cofired Ceramics) oder eine HTTC-Keramik (High Temperature Cofired Ceramics) verwendet wird.preferred Embodiments of the invention are that as a ceramic substrate a LTCC (Low Temperature Cofired Ceramics) or HTTC ceramic (High Temperature Cofired Ceramics).
Diese keramischen Werkstoffe zeichnen sich durch eine besonders geringe Wärmeleitfähigkeit im Vergleich zu Silizium (Si: ~150 W/mK, LTTC: ~3 W/mK) aus.These Ceramic materials are characterized by a particularly low thermal conductivity compared to silicon (Si: ~ 150 W / mK, LTTC: ~ 3 W / mK).
Es ist vorteilhaft, daß die elektrische Verdrahtung für die Mikroheizelemente in das keramische Substrat integriert bzw. auf dessen Oberfläche angeordnet wird.It is advantageous that the electrical wiring for the micro-heating elements integrated into the ceramic substrate or arranged on the surface becomes.
Durch die Integration der elektrischen Verdrahtung in Form von Leiterbahnen, welche in das chemisch stabile Substrat integriert sind, wird es möglich, die Mikroheizelemente von der Rückseite her anzuschließen. Durch diesen Lösungsansatz wird eine Beeinflussung des Abscheidevorgangs durch auf der Vorderseite angebrachte elektrische Anschlüsse, wie z.B. Bonddrähte, ausgeschlossen. Gleichzeitig wird die elektrische Verdrahtung während des Abscheidevorgangs und während des späteren Betriebs des Bauelementes vor z.B. korrosiver Umgebung geschützt.By the integration of the electrical wiring in the form of printed conductors, which are integrated into the chemically stable substrate, it becomes possible, the Micro heaters from the back to join. Through this approach is an influence on the deposition process by on the front attached electrical connections, such as. Bonding wires, locked out. At the same time, the electrical wiring during the Deposition process and during later Operation of the device before e.g. protected against corrosive environment.
Eine weitere zweckmäßige Ausbildung der Erfindung besteht darin, daß in das keramische Substrat eine Membranstruktur eingebracht wird.A further appropriate training the invention is that in the ceramic substrate is introduced into a membrane structure.
Diese Membranstruktur dient dazu, die Wärmeverluste während des Heizvorgangs der Mikroheizelemente zu reduzieren.These Membrane structure serves to reduce the heat losses during the To reduce heating of the micro heaters.
Weiterhin ist vorgesehen, daß vor dem CVD- bzw. PVD-Beschichtungsvorgang eine dielektrische Schicht auf der zu beschichtenden Oberfläche des Substrates angeordnet wird.Farther is provided that before the CVD or PVD coating process, a dielectric layer on the surface to be coated of the substrate is arranged.
Zur Erfindung gehörig ist auch ein mittels CVD oder PVD beschichtetes Substrat mit einer elektrisch isolierenden Oberfläche, wobei die Beschichtung auf Mikroheizelemente aufgebracht ist, die wiederum auf einem keramischen Substrat angeordnet sind.to Invention belongs is also a CVD or PVD coated substrate with a electrically insulating surface, wherein the coating is applied to micro heaters, the are again arranged on a ceramic substrate.
Erfindungsgemäß ist hierbei vorgesehen, daß das keramische Substrat eine LTCC-Keramik (Low Temperature Cofired Ceramics) oder eine HTTC-Keramik (High Temperature Cofired Ceramics) ist.According to the invention here is provided that the ceramic substrate a LTCC (Low Temperature Cofired Ceramics) ceramic or HTTC (High Temperature Cofired Ceramics) ceramics.
Es ist zweckmäßig, daß die elektrische Verdrahtung für die Mikroheizelemente in das keramische Substrat integriert bzw. auf dessen Oberfläche angeordnet ist.It is appropriate that the electrical Wiring for the micro-heating elements integrated into the ceramic substrate or arranged on the surface is.
Es kann auch vorgesehen sein, daß in das keramische Substrat eine Membranstruktur eingebracht ist.It can also be provided that in the ceramic substrate has a membrane structure introduced.
Schließlich ist es sinnvoll, daß zwischen der mit Mikroheizelementen versehenen Oberfläche des keramischen Substrates und der mittels CVD oder PVD aufgebrachten Beschichtung eine dielektrischen Schicht angeordnet ist.Finally is it makes sense that between the provided with Mikroheizelementen surface of the ceramic substrate and the CVD or PVD deposited coating is a dielectric Layer is arranged.
Im Rahmen der Erfindung liegt weiterhin die Verwendung von erfindungsgemäßen mittels CVD oder PVD beschichteten Substraten als Mikrosensoren oder Mikroaktoren.in the The invention further provides the use of means according to the invention CVD or PVD coated substrates as microsensors or microactuators.
Nachfolgend wird ein Ausführungsbeispiel der Erfindung anhand einer Zeichnung beschrieben.following is an embodiment of Invention described with reference to a drawing.
Es zeigtIt shows
Wie
aus
Auf
die Mikroheizelemente
Während des
dargestellten Aufbringen einer Beschichtung
Da feinkörnigere Phasen aufgrund der größeren Anzahl von Korngrenzen und Defekten eine höhere Ätzrate zeigen als die entsprechende kristalline Phase, ist die Ätzsensibilität der ersteren höher, so daß es möglich ist, in einem (z.B. wäßrigen) Ätzschritt die Beschichtung außerhalb der Mikroheizelemente zu entfernen und diejenige auf den Mikroheizelemente zu belassen. Es wird auf diese Weise möglich, eine maskenlose Oberflächenstrukturierung mittels CVD- bzw. PVD-Verfahren durchzuführen.There fine-grained Phases due to the larger number of grain boundaries and defects show a higher etch rate than the corresponding one crystalline phase, is the etch sensitivity of the former higher, so that it possible in an (e.g., aqueous) etching step the coating outside remove the micro heaters and those on the micro heaters to leave. It is possible in this way, a maskless surface structuring using CVD or PVD method.
Die
Mikroheizelemente
Neben
der Verwendung als Sensor (Drucksensor, Temperatursensor, etc.)
kann die erzeugte Struktur auch in der Mikroaktorik verwendet werden, da
die erzeugte Struktur über
die Mikroheizelemente
Claims (13)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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DE200510048482 DE102005048482A1 (en) | 2005-10-07 | 2005-10-07 | Method for coating electrically insulating surfaces by CVD or PVD e.g. for materials research, involves forming micro-heating elements on ceramic substrate |
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DE200510048482 DE102005048482A1 (en) | 2005-10-07 | 2005-10-07 | Method for coating electrically insulating surfaces by CVD or PVD e.g. for materials research, involves forming micro-heating elements on ceramic substrate |
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DE102005048482A1 true DE102005048482A1 (en) | 2007-04-12 |
Family
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DE200510048482 Ceased DE102005048482A1 (en) | 2005-10-07 | 2005-10-07 | Method for coating electrically insulating surfaces by CVD or PVD e.g. for materials research, involves forming micro-heating elements on ceramic substrate |
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3804805A1 (en) * | 1988-02-16 | 1989-08-24 | Max Planck Gesellschaft | CVD METHOD FOR DEPOSITING A LAYER ON A THIN-LAYER METAL STRUCTURE |
US4953387A (en) * | 1989-07-31 | 1990-09-04 | The Regents Of The University Of Michigan | Ultrathin-film gas detector |
US5296255A (en) * | 1992-02-14 | 1994-03-22 | The Regents Of The University Of Michigan | In-situ monitoring, and growth of thin films by means of selected area CVD |
EP0795625A1 (en) * | 1996-03-11 | 1997-09-17 | Tokyo Gas Co., Ltd. | Thin film deposition method and gas sensor made by the method |
US20030164371A1 (en) * | 2002-03-01 | 2003-09-04 | Board Of Control Of Michigan Technological University | Induction heating of thin films |
-
2005
- 2005-10-07 DE DE200510048482 patent/DE102005048482A1/en not_active Ceased
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3804805A1 (en) * | 1988-02-16 | 1989-08-24 | Max Planck Gesellschaft | CVD METHOD FOR DEPOSITING A LAYER ON A THIN-LAYER METAL STRUCTURE |
US4953387A (en) * | 1989-07-31 | 1990-09-04 | The Regents Of The University Of Michigan | Ultrathin-film gas detector |
US5296255A (en) * | 1992-02-14 | 1994-03-22 | The Regents Of The University Of Michigan | In-situ monitoring, and growth of thin films by means of selected area CVD |
EP0795625A1 (en) * | 1996-03-11 | 1997-09-17 | Tokyo Gas Co., Ltd. | Thin film deposition method and gas sensor made by the method |
US20030164371A1 (en) * | 2002-03-01 | 2003-09-04 | Board Of Control Of Michigan Technological University | Induction heating of thin films |
Non-Patent Citations (3)
Title |
---|
Appl. Phys. Lett. 66(7), 13.02.1995, S. 812-814 * |
IEEE Electron Device Letters, Vol. 16, No. 6, Juni 1995, S. 217-219 * |
Thin Solid Films, 217 (1992), S. 187-192 * |
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