DE102008015550A1 - Optoelectronic protection device for projecting letters or pictograms on projection surface, comprises optoelectronic semiconductor component, which comprises luminescence diode chip - Google Patents

Abstract

The optoelectronic protection device (1) comprises an optoelectronic semiconductor component (2), which comprises a luminescence diode chip (3). A screen (4) is provided, which comprises a radiation-opaque area (4a) and a radiation-transparent area (4b), where the screen is an image providing element of the protection device. A base body is provided, which is made of glass or plastic, and the structured radiation-transparent layer has a metal, particularly aluminum. An independent claim is included for a method for manufacturing an optoelectronic protection device.

Description

It an optoelectronic projection device is specified.

A to be solved The object is an optoelectronic projection device indicate with which it is possible is simple patterns like geometric figures, pictures, signs, To represent letters or pictograms on a projection screen. A more to be solved The object is an optoelectronic projection device specify which is particularly easy to produce and especially space is saving.

At least an embodiment of the Optoelectronic projection device includes the optoelectronic Projection device at least one optoelectronic semiconductor device, which comprises at least one luminescence diode chip. In the luminescence diode chip For example, it is a LED chip or a Laser diode chip.

The Optoelectronic semiconductor component comprises in addition to the LED chip preferably external connection points over which electrically contacts the optoelectronic semiconductor component can be.

For example this is the optoelectronic semiconductor component to a light emitting diode or to a laser diode. The optoelectronic Semiconductor device is suitable in operation, electromagnetic Generate radiation.

Preferably the optoelectronic semiconductor component is suitable, electromagnetic Radiation from the wavelength range to produce visible light. The optoelectronic semiconductor component In operation, for example, then colored light or white light produce.

At least an embodiment of the Optoelectronic projection device includes the optoelectronic Projection device a diaphragm. The aperture includes at least a radiopaque Area and at least one radiation-transmissive area. That is, through a part of the diaphragm can be exposed to electromagnetic radiation, from another part of the aperture becomes electromagnetic radiation absorbed and / or reflected, so this area of the aperture radiopaque is. The diaphragm preferably forms the image-giving element the optoelectronic projection device. That is, through the at least one radiation-transmissive region of the diaphragm can electromagnetic radiation occur. The electromagnetic radiation is thereby shaped by the aperture in a certain way, so that the image to be generated of the optoelectronic projection device results.

At least an embodiment of the Optoelectronic projection device occurs generated during operation electromagnetic radiation of the optoelectronic semiconductor component through the at least one radiation-transmissive region of the diaphragm. Preferably, that of the optoelectronic semiconductor device generated electromagnetic radiation only through the at least one radiation-transmissive area the aperture occur. This means, there are for the generated by the optoelectronic semiconductor device in operation electromagnetic radiation no other way, the projection device leave as through the at least one radiation-transmissive area of the Cover.

At least an embodiment of the Optoelectronic projection device includes these at least an optoelectronic semiconductor component which has at least one Luminescence diode chip comprises. The diaphragm further comprises at least a radiolucent Area and at least one radiopaque area, wherein the aperture the image giving element of the optoelectronic projection device is. The of the optoelectronic semiconductor device in operation generated electromagnetic radiation occurs through the at least a radiolucent Area of the aperture.

The is called, in the optoelectronic semiconductor component, for example generates visible light to a luminescence diode chip. This light meets the aperture and can there through structured, radiation-permeable areas exit from the aperture. The aperture forms the image-giving element the optoelectronic projection device.

The radiolucent Areas of the diaphragm are structured, for example, such that they form a given pattern. This will be positive for you projection displayed. On the other hand, it is also possible that the displayed Pattern through the radiopaque areas of the panel is formed. In this case, the pattern turns negative on one projection displayed. In other words, the pattern is through the shadow formed, which generates from the radiopaque region of the diaphragm becomes.

The projection device described here is characterized in particular by the fact that it is particularly easy to manufacture and very space-saving. The projection device may, for example, be used in mobile devices, such as mobile telephones, laptops or game consoles. It can be introduced for advertising purposes, for example in pens, which can then project a company logo on a projection screen. With the combination of several of these opto-electronic projection devices, more complex information such as words can be reproduced, which can then form simple scoreboards. Furthermore, the use of such projection devices in toys is conceivable. Also, the use of the projection device for decoration, such as in the projection of pictograms such as stars, smileys, flowers or the like in different colors on walls is conceivable. Furthermore, characters, such as arrows, letters or logos, can be projected onto walls.

At least an embodiment of the Optoelectronic projection device, the aperture is mechanical firm and unsolvable connected to the optoelectronic semiconductor device. That is, the Aperture is not interchangeable. A removal of the aperture from the optoelectronic Semiconductor device would to injury the optoelectronic semiconductor component and / or the diaphragm to lead. By way of example, the diaphragm is with the optoelectronic semiconductor component bonded. In this case, the aperture on a housing of the optoelectronic Be glued semiconductor device. But it is also possible that the aperture directly on the at least one Lumineszenzdiodenchip the optoelectronic semiconductor device is glued.

At least an embodiment of the Optoelectronic projection device is the at least one radiopaque Area of the aperture formed reflective, such that on the at least one radiopaque region impinging electromagnetic Radiation reflected back into the optoelectronic semiconductor device becomes. This means, generated by the optoelectronic semiconductor device in operation Electromagnetic radiation is partly due to the at least one radiopaque Area of the aperture. This is at least part of this radiation formed reflective, so that at least a part of this radiation reflected back into the opto-electronic semiconductor device becomes.

At least an embodiment of the Optoelectronic projection device meets at least a part the reflected back Radiation on the at least one Lumineszenzdiodenchip and is there photons-recycled or turn in the direction of the aperture reflected back. This means, the electromagnetic reflected back to the LED chip Radiation can be reabsorbed by this and for re-generation be used by radiation. Furthermore, it is possible for the luminescence diode chip reflective surfaces as having a mirror or a partially reflecting outer surface, so that the electromagnetic radiation striking him was thrown back becomes.

At least an embodiment of the Optoelectronic projection device meets at least a part the reflective trained radiopaque region the panel reflected back electromagnetic radiation on a reflector of the optoelectronic Semiconductor device and is reflected back from there to the aperture. The at least one optoelectronic semiconductor component can thereby for example, a housing with reflective sidewalls include, in which the at least one LED chip inserted is. These reflective side walls form a reflector, which can reflect incident radiation back to the aperture.

At least an embodiment of the Optoelectronic projection device includes the aperture a Body, made of a radiolucent Material exists, wherein on the body a structured radiopaque layer is applied, which forms the at least one radiopaque region. For example, a radiopaque layer over the entire surface one side of a disk-like base body can be applied and subsequently for example, by photolithographic methods in radiopaque and radiation-transmissive areas be structured. In particular, it is possible that the main body a Contains glass or a transparent plastic or of these materials consists. The structured radiopaque layer may then be Metal, in particular aluminum, included. Such a radiopaque layer is characterized by the fact that, for example, by vapor deposition can be made very easily. Furthermore, a metallic layer a good reflectivity for electromagnetic Radiation in the wavelength range for visible Light up.

At least an embodiment is at the aperture at its the optoelectronic semiconductor device opposite side an optical element, in particular an aspherical lens, arranged. This means, generated by the optoelectronic semiconductor device in operation Electromagnetic radiation first passes through the aperture, which forms the image to be displayed. This image is then taken from the optical Element which follows the aperture in the emission direction, on a projection projected. The optical element may also be suitable change the main radiation direction of the radiation, so for example a rotation of the main emission by 90 ° can take place.

In accordance with at least one embodiment The optical element is glued with an optical adhesive directly to the panel. This allows a particularly simple and cost-effective production of the optoelectronic projection device.

At least an embodiment of the Optoelectronic projection device is the aperture directly on a radiation exit surface the at least one LED chip applied. That is, the Aperture is, for example, directly on the radiation exit surface of LED chips anodically bonded or glued. This allows one particularly space-saving construction of the optoelectronic projection device. An optical element can then be glued directly to the panel, so in total for the optoelectronic projection device a particularly flat and thus space-saving construction results.

It gets over it In addition, a method for producing a plurality of optoelectronic projection devices specified.

At least an embodiment of the Procedure will be first a variety of optoelectronic semiconductor devices, the each comprise at least one luminescence diode chip provided. In a subsequent process step, a disc with a body made of radiolucent Material on the variety of optoelectronic semiconductor devices applied. Before applying or after applying the disc becomes at least one radiopaque region per optoelectronic semiconductor device on the body the disc produced. For example, the main body of the Disc before or after applying the disc to the plurality of Optoelectronic semiconductor devices are coated with a metal. Subsequently can on the coated disc radiation-transmissive areas, for example produced by photolithographic processes.

Of the Advantage of making the radiopaque and radiopaque regions after applying the disc is that the areas then in a simple manner very closely to the associated optoelectronic semiconductor device can be structured.

In a final one The method step is the arrangement of optoelectronic semiconductor components and disc for optoelectronic projection devices with each isolated at least one optoelectronic semiconductor device.

The isolated disc with the radiopaque areas forms after the separation of the arrangement then the aperture of the optoelectronic Projection device, which at least one radiopaque region and at least one radiation-transmissive region.

at this method it is possible that the radiopaque and the radiation-transmissive Areas for each of the optoelectronic semiconductor devices designed the same are. This means, It then becomes a variety of optoelectronic projection devices generated, which all have the same image-giving element and thus project the same image during operation. However, it is also possible, that the radiopaque and the radiation-transmissive Areas per optoelectronic semiconductor device to each other different, so various optoelectronic projection devices be generated by the method, each of which project different images.

In Variation of the method, it is also possible that on each optoelectronic Semiconductor component is applied a single aperture. The is called, in this case, no disc is applied, which then to the aperture is separated, but each optoelectronic semiconductor device is equipped from the outset with its own aperture.

through the method of manufacturing a variety described herein of optoelectronic projection devices is preferred one of the optoelectronic projection devices described here produced.

At least an embodiment of the The process is the disc on a variety of optoelectronic Semiconductor devices or LED chips applied, which exist in the network.

The Luminescence diode chips can in this case, for example, in the wafer composite. That is, the Luminescence diode chips are grown epitaxially in the wafer composite. The wafer thus produced with a growth substrate or a carrier and the LED chip is connected to the disk. By the subsequent one Separate optoelectronic projection devices with Luminescence diode chips and diaphragms generated.

In addition, it is also possible for the optoelectronic semiconductor components to be present in a composite. For this purpose, luminescence diode chips can be applied to a common carrier. For example, the carrier may be act a circuit board on which the LED chips are electrically connected. The circuit board may comprise, for example, a base body made of ceramic or silicon, on which strip conductors of electrically conductive material are structured.

Further Is it possible, that the plurality of LED chips in so-called QFN (Quad Flat No leads) - Housings introduced is. Preferably, then in each QFN housing exactly one Lumineszenzdiodenchip brought in.

in the The following are the optoelectronic projection devices described here as well as the methods described here for the production of optoelectronic Projection devices based on embodiments and the associated figures explained in more detail.

The 1A . 1B . 1C show schematic views of an optoelectronic projection device described here according to a first embodiment.

The 2 shows a schematic side view of an optoelectronic projection device described here according to a second embodiment.

The 3A and 3B show optoelectronic projection devices described here in schematic sectional views according to further embodiments.

The 3C shows a diaphragm for an optoelectronic projection device described here.

The 4A and 4B show schematic sectional views of further embodiments of optoelectronic projection devices described here.

The 5A to 5E show schematic perspective views of a first embodiment of a method described here.

The 6A and 6B show a schematic sectional views of a second embodiment of a method described herein.

In the embodiments and figures are the same or equivalent components respectively provided with the same reference numerals. The illustrated elements are not to scale to look at, rather Exaggerated individual elements for better understanding be.

The 1A shows a schematic sectional view through an optoelectronic projection device described here according to a first embodiment. The optoelectronic projection device 1 includes an optoelectronic semiconductor device 2 , The optoelectronic semiconductor component 2 has a basic body 20 on. The main body 20 has a recess and forms a housing for a luminescence diode chip 3 , The main body 20 is formed for example of a plastic or a ceramic material.

By way of example, the optoelectronic semiconductor component is concerned 2 around a light-emitting diode. For example, it may be a TopLED or a Dragon LED of Osram Opto Semiconductors.

The main body 20 of the optoelectronic semiconductor component 2 includes reflective sidewalls, which are a reflector 22 form. In the recess of the body 20 is a luminescence diode chip 3 , Present a light-emitting diode chip introduced, which is in operation electromagnetic radiation 5 radiates. The luminescence diode chip 3 can be potted with a potting material.

On the optoelectronic semiconductor device 2 is a blind 4 applied. The aperture 4 is in radiopaque areas 4a and radiation-transmissive areas 4b structured. From the luminescence diode chip 3 in operation generated electromagnetic radiation 5 can the opto-electronic projection device 1 through the radiation-transmissive areas 4b leave the aperture.

At the aperture 4 it may, for example, be a structured layer of reflective, for example metallic, material, which acts directly on the optoelectronic semiconductor component 2 is applied. In addition, it may be at the aperture 4 to act a metal plate, are introduced in the breakthroughs, which are the radiation-transmissive areas 4b form. In addition, it is possible that the aperture 4 , as in connection with the schematic sectional view of 3C represented, a basic body 41 made of a radiation-transmissive material such as glass or plastic. On the main body 41 is a structured coating 42 applied, which consists for example of a metal.

In the embodiment of 1A is the aperture 4 at their radiopaque areas 4a formed reflective, so that - as in 1A shown - electromagnetic radiation 5 at the radiopaque areas 4a is reflected back into the opto-electronic semiconductor device. There, the radiation either hits the reflector 22 or the luminescence diode chip 3 from which the radiation 5 reflected or reabsorbed and recycled.

In conjunction with the 1B is a plan view of the optoelectronic projection device according to the first embodiment shown. In this embodiment, through the radiation-transmissive area 4b the letter "A" formed. That is, in operation of the optoelectronic projection device when the LED chip 3 ie electromagnetic radiation 5 is generated by the aperture 4 the letter "A" shown. The aperture 4 is the image-giving element of the optoelectronic projection device.

The 1C shows a bottom view of the opto-electronic projection device 1 according to the first embodiment. The optoelectronic projection device comprises at its the aperture 4 opposite bottom side connection points 21 , via which the optoelectronic projection device can be mounted, for example, by means of soldering on a printed circuit board and electrically connected.

The 2 shows an optoelectronic projection device described here 1 according to a second embodiment. In this embodiment, the optoelectronic semiconductor device 2 , as for example in connection with the 1A to 1C is described, an optical element 6 downstream. In the optical element 6 it is a lens, which is the projection of the through the aperture 4 improved image on a screen. For example, the lens is a silicone lens having a refractive index of about 1.41. The lens has of the mounting surface of the LED chip 3 a height of 8.2 mm at its highest point and a diameter of 6.6 mm. The aspherically curved surface of the lens is formed by a second order curve. With the help of the optical element 6 is it possible for that from the aperture 4 Picture created on a wall in distance of 2 to 100 cm can be projected particularly well. Projections to more distant areas are possible, but with increasing distance to the projection surface, the brilliance of the projected image decreases.

In the embodiment, as in connection with the 2 is explained is between aperture 4 and optical element 6 an air gap arranged. In this way, that of the aperture 4 facing radiation entrance surface of the optical element 6 be used as an optical surface, whereby the radiation characteristic of the projection device can be adjusted particularly well.

In conjunction with the 3A is another embodiment of an optoelectronic projection device described here 1 shown. The optoelectronic projection device comprises a light emitting diode as an optoelectronic semiconductor component 2 , The semiconductor device 2 is a blind 4 downstream. On the aperture 4 is unlike in conjunction with the 2 described embodiment, the optical element 6 applied directly, for example glued.

In conjunction with the 3B a further embodiment of a projection device described here is explained in more detail. Unlike in conjunction with the 3A described embodiment is the optical element in this embodiment 6 formed as a lens which has no rotational symmetry. The lens is shaped to be the main emission direction 5a the optical projection device, which in the embodiment of the 3A perpendicular to the radiation exit surface of the LED chip 3 stands, turns by a certain angle. In this way, that can be done by the aperture 4 generated image "around the corner" are projected. This can be as space-saving installation of the optoelectronic projection device 1 in a small device such as a mobile phone.

In conjunction with the 3C is an aperture on the basis of a schematic sectional view 4 described how it can be used in an optoelectronic projection device described here. The aperture 4 includes a main body 41 made of radiation-permeable material such as glass. On the the Lumineszenzdiodenchip 3 remote surface of the body 41 is a layer 42 applied, which is for example reflective and consists of a metal. The layer 42 is in radiopaque areas 4a and radiation-transmissive areas 4b structured.

The 4A and 4B show further embodiments of an optoelectronic projection device described here. Unlike in conjunction with the 3A and 3B The exemplary embodiments shown are the optical element 6 spaced here from the optoelectronic semiconductor device 2 arranged. In this way, the optical element 6 in addition to a radiation exit surface on a radiation entrance surface, which is optically usable. For example, the radiation entrance surface of the optical element 6 be parabolic. The radiation exit surface can then be hyperbolic.

In conjunction with the 5A to 5E is a first embodiment of a method described here for producing an optoelectronic Projection device explained in more detail with reference to schematic perspective views.

In conjunction with the 5A a first process step is shown. In this method step, a multiplicity of optoelectronic semiconductor components are provided in combination. The optoelectronic semiconductor components comprise a main body 20 , which may be formed, for example, by a silicon carrier or a ceramic carrier, on which conductor tracks for electrical contacting of the LED chips 3 are structured. In the LED chips 3 they may be light emitting diodes or surface emitting semiconductor laser diodes. The LED chips 3 each have a radiation exit surface 3a on.

In conjunction with the 5B a further method step is described. In this process step becomes a disc 7 made of radiation-permeable material - for example made of glass - on the variety of optoelectronic semiconductor devices 2 applied. For example, the disc 7 on the optoelectronic semiconductor components 2 glued on. The disc 7 includes on its the LED chips 3 opposite side a radiopaque coating 42 , which is formed for example by a metal.

In conjunction with the 5C is shown as after applying the disc 7 to the optoelectronic semiconductor devices by structuring the metal layer 42 Radiation-permeable areas 4b and radiopaque areas 4a can be generated. In concluding process steps, the composite produced in this way can be separated into individual optoelectronic projection devices, each of which has at least one luminescence diode chip 3 include, 5D ,

In conjunction with the 5E is shown on the aperture 4 an optical element 6 is applied. In the optical element 6 For example, it is a lens like the one in the 2 . 3A . 3B . 4A , or 4B is shown. The optical element may, for example, by means of a transparent adhesive on the panel 4 to be glued. Furthermore, it is possible for the optical element and diaphragm to be connected to one another by means of anodic bonding.

In conjunction with the 6A and 6B is explained in more detail with reference to schematic sectional views of a second embodiment of a method described herein. In this embodiment, a plurality of basic bodies 20 provided, each having a recess, in each of which at least one luminescence diode chip 3 is introduced. For example, it is the basic bodies 20 around QFN housing. The basic body 20 each include a reflector 22 for the of the LED chips 3 in operation generated electromagnetic radiation 5 at least partially reflective. The basic body 20 with LED chips 3 represent optoelectronic semiconductor devices in combination.

On the main body is a disc 7 applied, in or on the radiopaque areas 4a and radiation-transmissive areas 4b are structured. The disc 7 can at the same time a cover for the LED chips 3 form, so that a potting of the LED chips 3 optional can be omitted.

As indicated by the dashed lines in the 6B indicated, the composite can be made of disc 7 and optoelectronic semiconductor devices 2 to individual optoelectronic projection devices 1 to be isolated.

The The invention described herein is not by the descriptions the embodiments and limited to the figures. Rather, the invention encompasses every new feature as well as every combination of features, in particular any combination of features in Claims includes even if this feature or this combination of features is not itself explicitly in the claims or embodiments is specified.

Claims (12)

Optoelectronic projection device ( 1 ) with - at least one optoelectronic semiconductor component ( 2 ), the at least one luminescence diode chip ( 3 ), - an aperture ( 4 ) comprising at least one radiopaque region ( 4a ) and at least one radiation-transmissive region ( 4b ), wherein the diaphragm ( 4 ) is the imaging element of the projection device, and - wherein the optoelectronic semiconductor device ( 2 ) electromagnetic radiation generated during operation ( 5 ) through the at least one radiation-transmissive region ( 4b ) occurs. An optoelectronic projection device according to the preceding claim, wherein the at least one radiation-impermeable region ( 4a ) the aperture ( 4 ) is formed reflecting, such that on the at least one radiation-impermeable region ( 4a ) appropriate electromagnetic radiation ( 4 ) in the optoelectronic semiconductor component ( 2 ) is reflected back. Optoelectronic projection device ge according to the previous claim, wherein at least part of the back-reflected radiation ( 5 ) in the at least one luminescence diode chip ( 3 ) and photons are recycled or reflected there. An optoelectronic projection device according to claim 2 or 3, wherein at least part of the back-reflected radiation ( 5 ) on a reflector ( 22 ) of the optoelectronic semiconductor component ( 2 ) and reflected there. Optoelectronic projection device according to one of the preceding claims, in which the diaphragm ( 4 ) a basic body ( 41 consisting of a radiation-transmissive material and to the base body a structured radiopaque layer ( 42 ), which forms the at least one radiation-impermeable region. An optoelectronic projection device according to the preceding claim, wherein the base body ( 41 ) contains a glass or a plastic and the structured radiation-transmissive layer ( 42 ) contains a metal, in particular aluminum. Opto-electronic projection device according to one of the preceding claims, in which the diaphragm ( 4 ) at its the at least one luminescence diode chip ( 3 ) facing away from an optical element ( 6 ), in particular an aspherical lens, follows. Optoelectronic projection device according to the preceding claim, in which the optical element ( 6 ) on the aperture ( 4 ) is glued. Optoelectronic projection device according to one of the preceding claims, in which the diaphragm ( 4 ) directly onto a radiation exit surface ( 3a ) of the at least one LED chip ( 3 ) is applied. Method for producing a multiplicity of optoelectronic projection devices, comprising the steps of: providing a multiplicity of optoelectronic semiconductor components ( 2 ) each having at least one luminescence diode chip ( 3 ), - applying a disc ( 7 ) with a basic body ( 41 ) of radiation-transmissive material on the plurality of optoelectronic semiconductor components, - producing at least one radiation-impermeable region ( 4a ) per optoelectronic semiconductor component on the disk, - separation of the arrangement of optoelectronic semiconductor components ( 2 ) and disc ( 7 ) to optoelectronic projection devices ( 1 ) each having at least one optoelectronic semiconductor component ( 2 ). Method according to the preceding claim, wherein at least An optoelectronic projection device according to claims 1 to 9 is produced. Method according to one of the preceding claims, wherein the disk is applied to a multiplicity of luminescence diode chips ( 3 ) is applied, which are present in the composite.