DE102011100743A1 - Semiconductor device and a method for producing a semiconductor device - Google Patents

Abstract

The invention relates to a semiconductor component (1) with a plurality of emission areas (10), in which at least one emission area (10) has a semiconductor body (2) with an active area (20) intended to generate radiation, and with a carrier (3 ), which has a mounting surface (34). The semiconductor body (2) is arranged on one (3) and a deflection device (6) is provided between the active area (20) and the mounting surface (34), which is intended to move the active area (20) relative to the mounting surface (34 ) deflect. A method for producing a semiconductor component is also specified.

Description

The present application relates to a semiconductor device and a method for manufacturing a semiconductor device.

In the case of light sources based on light-emitting diodes (LEDs), the emission characteristic is generally predetermined by the configuration of the semiconductor chips of the LEDs, if appropriate in conjunction with a primary optics associated with the LEDs. For applications in which the radiation characteristic is to be varied, for example for an adaptive headlight system (AFS), this can be achieved by a mechanical adjustment of a secondary optics and / or by switching on and off of individual semiconductor chips. However, this is comparatively complicated and costly.

An object is to specify a semiconductor component in which a spatial radiation characteristic can be varied in a simple manner during operation. Furthermore, a method is to be specified with which such a semiconductor device can be produced inexpensively and reliably.

This object is achieved by a semiconductor component or a method having the features of the independent patent claims. Embodiments and developments are the subject of the dependent claims.

According to one embodiment, a semiconductor component has a plurality of emission regions, which are preferably spaced apart from one another in a lateral direction and furthermore preferably are arranged next to one another. At least one emission region has a semiconductor body with an active region provided for generating radiation. The semiconductor component has a carrier with a mounting surface, wherein the semiconductor body is arranged on a side of the carrier facing away from the mounting surface, and a deflection device is formed between the active region and the mounting surface. The deflection device is provided for deflecting, in particular tilting, the active region during operation of the semiconductor component relative to the mounting surface.

By means of the deflection device integrated in the semiconductor component, in particular in the carrier as part of the semiconductor component, a spatial radiation characteristic of the semiconductor component can be varied in its operation. A mechanical adjustability of a secondary optics downstream of the semiconductor component in a radiation direction for varying the emission characteristic may be dispensed with.

Preferably, a plurality of the emission regions, particularly preferably each of the emission regions, has a semiconductor body with an active region provided for generating radiation and a deflection device assigned to the respective semiconductor body.

By means of the deflection device, a main emission axis of the respective emission region, which preferably extends perpendicularly to a main extension plane of the active region, can be deflected relative to the assembly plane.

Further preferably, a plurality of the semiconductor bodies, particularly preferably all the semiconductor bodies, are arranged on a common carrier. The semiconductor bodies furthermore preferably proceed from a common, in particular epitaxial, semiconductor layer sequence with the active region.

In a preferred embodiment, the deflection device is formed by means of a columnar region of the carrier. The columnar region has at least one laterally extending direction, preferably along two laterally and mutually perpendicular directions, a smaller extent than the active region.

Preferably, an extension of the columnar area along a lateral direction between 10% and 90% inclusive, more preferably between 10% and 60% inclusive, is the extent of the semiconductor body along that direction. The larger the cross-section of the columnar region in view of the semiconductor component, the lower the thermal resistance for lost heat generated in operation in the active regions. At the same time, however, the reversible bendability decreases with increasing lateral expansion.

The carrier preferably has a base region. The base region preferably extends continuously in a lateral direction over the semiconductor body in a lateral direction.

On the side facing away from the base region of the columnar region, the carrier preferably has a deflection region, on which the respective semiconductor body is arranged and preferably fixed. The deflection region preferably projects beyond the columnar region at least along one direction, particularly preferably on all sides.

Further preferably, the carrier has a carrier body, which is preferably formed in one piece. In particular, the carrier body, the pedestal region, the columnar region and the Forming deflection range. The support body can furthermore form the pedestal region, the respective columnar region and preferably also the respective deflection region for at least two emission regions, in particular for all emission regions.

In a preferred embodiment, the carrier, in particular the carrier body, contains a semiconductor material. In particular, the carrier body can consist of a semiconductor material. Silicon is particularly suitable due to its good microstructure, its large-scale and cost-effective availability and its high thermal conductivity. Deviating from this, however, it is also possible to use another semiconductor material, for example gallium arsenide or germanium.

Further preferably, the columnar region is arranged between the base region of the carrier and the active region. The columnar region is preferably arranged centrally to the associated semiconductor body. That is, in plan view of the semiconductor device is a center of gravity of the semiconductor body within the columnar region. Preferably, a center of gravity of the columnar region and a center of gravity of the associated semiconductor body lie on one another or substantially one another, for example with a deviation of at most 10% of the maximum lateral extent of the semiconductor body.

In a preferred embodiment, the deflection device has an electrode arrangement on a side of the base region facing the semiconductor body and a counter electrode arrangement arranged between the electrode arrangement and the active region, in particular on the deflection region of the carrier.

Preferably, the electrode assembly and the counter electrode assembly each comprise a pair of electrodes, wherein the electrodes of the pair of electrodes are respectively disposed on opposite sides of the columnar portion.

By applying an electrical voltage between the electrode arrangement and the counter-electrode arrangement, the associated active area can be deflected relative to the mounting surface, in particular tilted. A deflection angle relative to the mounting plane is preferably continuously adjustable via the applied voltage. In terms of the mounting surface, a deflection angle is preferably between 0 ° and 45 °, inclusive.

For a deflection of the semiconductor body in two obliquely or vertically extending directions, the deflection device can have a further electrode arrangement and a further counter-electrode arrangement.

In a preferred embodiment, the carrier has a via, with which the active region can be electrically contacted by the mounting surface. A front side, ie radiation side, electrical contacting of the semiconductor body is thus not required.

In a further preferred refinement, the semiconductor body is connected in a material-bonded manner to the carrier. In a cohesive connection, the, preferably prefabricated, connection partners are held together by means of atomic and / or molecular forces. A cohesive connection can be achieved, for example, by means of a bonding layer, for example an adhesive layer or a solder layer.

The carrier serves for the mechanical stabilization of the semiconductor body. A growth substrate for the semiconductor layer sequence of the semiconductor body is no longer necessary for this and can thus be removed. Alternatively, it is also conceivable that the growth substrate itself forms the carrier.

In a further preferred refinement, the semiconductor body has a beam-shaping element on a side facing away from the carrier. The beam-shaping element can be integrated into the semiconductor body or can be applied to the semiconductor body in the form of a particularly prefabricated optical element. In particular, the beam-shaping element may be formed as a photonic crystal. Directed radiation of the radiation generated in the active region is thus simplified.

In a further preferred refinement, a spatial emission characteristic of the semiconductor component can be adjusted by means of an electrically induced deflection of the at least one active region, in particular by application of an electrical voltage. Mechanical elements are therefore not required for setting the emission characteristic.

A radiation source, which is provided for a spatially variable radiation during operation, preferably has at least one semiconductor component described above. The radiation source can be designed, in particular, as an adaptive headlight, an intelligent flash, ie a flash whose emission characteristic is adjustable depending on the scene to be illuminated, or as a display device, in particular a 3D display device for displaying a three-dimensional appearing image.

In a preferred embodiment, the active region is arranged between a first semiconductor layer facing away from the carrier and a second semiconductor layer. The semiconductor body further preferably has at least one recess which extends through the second semiconductor layer and the active region. The first semiconductor layer is preferably electrically conductively connected to a first connection layer which extends through the recess. Between the carrier and the second semiconductor layer, a second connection layer is preferably arranged, with which the second semiconductor layer is electrically conductively connected. The second connection layer extends in regions between the first connection layer and the carrier. Such a semiconductor body can be contacted on the carrier side in a simple manner with two electrical contacts.

In a method for producing a semiconductor component having a plurality of emission regions which are arranged on a carrier with a mounting surface, according to one embodiment a semiconductor layer sequence with an active region provided for generating radiation is arranged on a side of the carrier facing away from the mounting surface. A plurality of semiconductor bodies is formed from the semiconductor layer sequence. At least one deflection device is formed, which is assigned to an emission region and provided for deflecting the active region of the emission region relative to the mounting surface.

The carrier is preferably already pre-structured before arranging the semiconductor layer sequence and preferably has contact surfaces which are respectively assigned to the semiconductor bodies.

In a preferred embodiment, the deflection device is produced after arranging the semiconductor layer sequence by means of selective removal of a sacrificial layer of the carrier. During the attachment of the semiconductor layer sequence, the sacrificial layer can therefore serve for mechanical stabilization. Subsequently, by removing the sacrificial layer, a columnar region of the carrier can be formed.

In a further preferred embodiment, the semiconductor layer sequence is deposited on a growth substrate and the growth substrate, in particular after attachment to the carrier removed.

The method described is particularly suitable for producing a semiconductor component described above. In the context of the semiconductor device executed features can therefore also be used for the process and vice versa.

Further features, embodiments and expediencies will become apparent from the following description of the embodiments in conjunction with the figures.

The same, similar or equivalent elements are provided in the figures with the same reference numerals.

The figures and the proportions of the elements shown in the figures with each other are not to be considered to scale. Rather, individual elements may be exaggerated in size for better representability and / or better understanding.

Show it:

1A an exemplary embodiment of a semiconductor device in the idle state ( 1A ) and in a deflected state ( 1B ), in each case in a schematic sectional view;

2 a second embodiment of a semiconductor device in a schematic sectional view;

3A to 3D A third exemplary embodiment of a semiconductor component in a schematic side view for various operating states ( 3A to 3C ) and in supervision ( 3D );

4A and 4B a fourth embodiment of two different operating conditions in a schematic side view; and

5A to 5E an embodiment of a method for producing a semiconductor device based on intermediate steps schematically shown in sectional view.

The same, similar or equivalent elements are provided in the figures with the same reference numerals.

The figures and the proportions of the elements shown in the figures with each other are not to be considered to scale. Rather, individual elements, in particular layer thicknesses, can be shown exaggeratedly large for better representability and / or better understanding.

In the 1A and 1B is each an emission area 10 according to a first embodiment of a semiconductor device shown. The semiconductor device has a plurality of such in the lateral direction next to each other arranged emission regions, which may be arranged, for example, line-like, matrix-like or honeycomb-like.

The emission area 10 has a semiconductor body 2 with an area active for generating electromagnetic radiation 20 on. The semiconductor body 2 is on a carrier 3 arranged and mechanically stable connected by means of a connecting layer, such as a solder layer or an adhesive layer with this (not explicitly shown). The semiconductor body, in particular the active region, preferably contains a III-V compound semiconductor material.

The carrier 3 has an integrally formed carrier body 30 with a columnar area 31 , a pedestal area 32 and a deflection area 33 on. The columnar area is between the pedestal area 32 and the deflection area 33 arranged the carrier.

On one of the semiconductor body 2 facing away from the carrier 3 a mounting surface 34 on, which is intended for attachment of the semiconductor device and preferably also for the electrical contacting.

In a lateral direction, ie in a direction parallel to the mounting surface 34 extending direction has the columnar area 31 a smaller extent than the semiconductor body 2 , The semiconductor body 2 is arranged centrally to the columnar area.

Conveniently, the lateral extent of the columnar region 31 formed such that the carrier 3 a sufficiently low thermal resistance for in operation in the semiconductor body 2 has generated waste heat and at the same time has a sufficiently high flexibility for the voltage-induced deflection. Preferably, the extension of the columnar region between 10% and 90% inclusive, more preferably between 10% and 60% inclusive, is the extent of the semiconductor body along that direction.

In the carrier 3 is still a via 37 formed over which the semiconductor body 2 from the mounting surface 34 can be contacted externally electrically. The electrical contacting of the semiconductor body 2 is related to 2 explained in more detail.

On the pedestal area 32 is an electrode assembly 35 educated. The electrode assembly has a first electrode 351 and one on the first electrode 351 opposite side of the columnar region 31 arranged second electrode 352 on.

The electrode assembly 35 is a counter electrode arrangement 36 assigned. The counter electrode arrangement has a first counterelectrode 361 and a second counter electrode 362 on and is at the deflection area 33 of the carrier body 30 educated. In supervision of the emission area 10 overlap the first electrode 351 and the first counter electrode and the second electrode 352 and the second counter electrode.

By means of the columnar area 31 , the electrode assembly and the counter electrode assembly is a deflection device 6 educated. By applying an electrical voltage between the electrode assembly 35 and the counter electrode assembly 36 can, as in 1B shown, the semiconductor body 2 , especially the active area 20 , relative to the mounting surface 34 be deflected by an angle α. Due to the deflection becomes a perpendicular to a main extension plane of the active area 20 extending Hauptabstrahlrichtung with respect to a mounting surface 34 vertically tilted vertical direction, so that the spatial radiation characteristic of the semiconductor device by varying the main emission directions of the emission regions 10 is adjustable during operation.

One from the carrier 3 remote radiation exit surface 201 of the semiconductor body 2 has a beam-shaping element 29 in the embodiment shown as one in the semiconductor body 2 trained photonic grating is executed. By means of the beam-shaping element, a directional radiation of the radiation generated during operation can be conveyed in the direction of the main emission direction. Deviating from the exemplary embodiment described, the beam-shaping element can also be designed as one on the semiconductor body 2 arranged optical element, for example, as a beam-focusing lens, be formed. On the beam-shaping element can also be dispensed with.

The carrier body 30 is preferably based on or consists of a semiconductor material. In particular, silicon is suitable. Gallium arsenide or germanium can also be used for the carrier.

The semiconductor body 2 with the active area 20 may also be deflectable relative to the mounting surface in two obliquely or mutually perpendicular directions. In particular, the deflection device can, on a side of the base region facing the semiconductor body, have a further electrode arrangement and one between the further electrode arrangement and the active electrode Having arranged region further counter-electrode arrangement, wherein the electrode assemblies and the counter electrode arrangements are arranged such that the semiconductor body is deflectable in two obliquely or perpendicular to each other extending directions.

Relative to the mounting surface 34 of the semiconductor device 1 The emission ranges are tilted preferably in an angular range between 0 ° and 45 °.

A second embodiment of a semiconductor device 1 is in 2 schematically shown in sectional view, again only one emission area 10 is shown. Already described in connection with the first embodiment elements may be similar, unless explicitly described deviating.

The semiconductor body 2 has an active area 20 on the one between the carrier 3 remote first semiconductor layer 21 and one to the wearer 3 facing second semiconductor layer 22 is arranged.

The semiconductor body 2 has recesses 25 up, extending from the carrier 3 forth through the second semiconductor layer 22 and the active area 20 through into the first semiconductor layer 21 extend into it.

Between the semiconductor body 2 and the carrier 3 is a first connection layer 23 arranged, extending through the recess 25 extends through and with the first semiconductor layer 21 is electrically connected, further is between the carrier 3 and the semiconductor body 2 a second connection layer 24 arranged, which is electrically conductive with the second semiconductor layer 22 connected is. The second connection layer 24 partially extends between the semiconductor body 2 and the first terminal layer 23 , The second connection layer 24 directly adjoins the second semiconductor layer 22 and is preferably for those in the active area 20 generated radiation mirroring. For example, the second connection layer 24 or a sub-layer thereof containing silver, aluminum or palladium or consist of such a material.

Between the first connection layer 23 and the second terminal layer 24 is an insulation layer to avoid an electrical short circuit 26 arranged.

The semiconductor body 2 is by means of a bonding layer 27 , For example, a solder or an electrically conductive adhesive layer, cohesively with the carrier 3 connected. The carrier 3 serves for the mechanical stabilization of the semiconductor body 2 , A growth substrate for the epitaxial semiconductor body 2 This is no longer necessary and therefore removed.

The carrier has two vias 37 on, extending in a vertical direction through the carrier body 30 extend through. By means of the bonding layer 27 is the first connection layer 23 with a first contact layer 41 and the second terminal layer 24 over a partial layer 241 with a second contact layer 42 electrically connected. By applying an external electrical voltage between the first contact layer 41 and the second contact layer 42 can be done by applying an external electrical voltage from the mounting surface 34 Charge carriers from different sides into the active area 20 be injected and recombine there under emission of radiation. On the of the carrier 3 opposite side of the semiconductor body 2 So no external electrical contacts are required, which would complicate the deflection of the semiconductor body and reduce the usable area for the radiation emission.

The pedestal area 32 is preferably integral to all emission ranges 10 of the semiconductor device 1 educated.

The contact layers 41 . 42 are by means of a further insulation layer 39 electrically from the carrier body 30 isolated.

For the insulation layers 26 . 39 For example, an oxide such as silicon oxide, a nitride such as silicon nitride, or an oxynitride such as silicon oxynitride is suitable.

Of course, deviating from the described embodiment, other contacting geometries, with which the first semiconductor layer 21 and the second semiconductor layer 22 from the radiation exit surface 201 opposite side is electrically contacted, find application.

A first embodiment of a radiation source 100 is based on the 3A to 3D shown, wherein the radiation source as a display device for displaying three-dimensional appearing images (3D display) is formed.

The radiation source has a semiconductor component 1 preferably as related to 1A . 1B and 2 is described described. For simplified illustration is for each emission range 10 in each case only simplified, the semiconductor body and the columnar region shown, wherein for each emission region in each case one Arrow illustrates the associated main radiation direction of the active area. The semiconductor device is on a connection carrier 5 arranged. About driving points 51 the individual emission regions can be controlled independently of one another so that both the radiation power and the main emission direction can be individually adjusted during operation by means of the deflection device for the emission regions.

As in 3D are the individual emission ranges 10 honeycomb-shaped and arranged side by side in the lateral direction. Deviating from this, however, another, in particular polygonal, for example rectangular or square, form can be used for the emission ranges.

Preferably, the deflection device is designed such that the axes of movement about which the deflection takes place are arranged radially symmetrically, so that a radially symmetrical deflection of the semiconductor bodies of the emission regions 10 he follows.

as in 3A shown, the main emission directions of the individual emission regions run 10 in the rest position of the deflection device parallel to each other and perpendicular to the mounting surface of the semiconductor device.

By a deflection of the semiconductor bodies of the outer emission regions, an adaptive and dynamic adjustment of the focal point can take place during operation of the display device. This is in the 3B in which the outer emission regions are deflected toward the center of the display device, and in the 3C in which a deflection takes place away from the center of the display device, shown schematically.

In the emission direction, the display device may be followed by secondary optics (not explicitly shown).

A second embodiment of a radiation source is in the 4A and 4A shown schematically. This second exemplary embodiment is suitable, for example, as an intelligent flash or as an adaptive headlight, wherein in turn the semiconductor component 1 in the direction of radiation secondary optics may be arranged downstream (not explicitly shown).

As related to the 3A to 3C can be described by applying an electrical voltage to the deflection of the emission areas 10 the spatial radiation characteristic, for example, be adjusted during operation for a flash so that the total generated radiation power of the semiconductor device in comparison to a uniform radiation amplified in the direction of an object to be illuminated 7 in front of a background 71 done so that the total on the object 7 incident radiation power is increased at the same generated radiation power of the semiconductor device.

In a headlight can be suitably varied by means of the deflection means, the spatial radiation of the headlamp, for example, when driving through curves and / or to regulate the beam range.

During operation, the deflection device integrated in the semiconductor component can be used to adapt the emission characteristic without a mechanical movement of downstream elements, for example, without downstream mechanically movable secondary optics. The mechanical structure of the radiation sources is thereby simplified. Furthermore, the radiation sources can be made more compact.

An exemplary embodiment of a method for producing a semiconductor component is shown in FIGS 5A to 5E schematically illustrated, a semiconductor layer 200 with an active region provided for generating radiation 20 is on a growth substrate 28 , for example a silicon substrate or a sapphire substrate, epitaxially deposited, for example by means of MOCVD or MBE (US Pat. 5A ). The process has been improved for the purpose of producing a single emission region only 10 shown in which out of the semiconductor layer sequence 200 a semiconductor body 2 evident.

The semiconductor layer sequence 200 comes with the from the growth substrate 28 facing away from a carrier 3 with a carrier body 30 attached, preferably on at least one contact layer arranged on the carrier (not explicitly shown). As a growth substrate, for example, a silicon substrate is suitable.

At the in 5B illustrated preparation of a composite with the growth substrate 28 and the carrier 3 the wearer has a sacrificial layer 38 which mechanically stabilizes the carrier. For example, a dielectric layer is suitable as a sacrificial layer, such as silicon oxide or silicon nitride. The carrier preferably already has plated-through holes during production of the composite 37 on.

After the mechanically stable connection with the carrier 3 becomes the growth substrate 28 away ( 5C ). This can be done mechanically, for example by means of grinding, lapping or polishing, chemically, for example by wet-chemical or dry-chemical etching, or by means of coherent radiation, for example laser radiation. Deviating from this, the growth substrate can also be removed before the composite is produced.

As in 5D can be shown after removing the growth substrate 28 the sacrificial layer to form the columnar regions 31 be removed. This is done for example by wet chemical etching. The risk of mechanical damage to the wearer 3 , in particular the comparatively thin columnar regions 31 During the removal of the growth substrate can be reduced as much as possible.

Below is on a pedestal area 32 of the carrier body 30 an electrode assembly 35 and on one of the pedestal area 32 opposite deflection range 33 a counter electrode arrangement opposite the electrode arrangement 36 formed, for example by means of vapor deposition or sputtering. The completed semiconductor device is in 5E shown.

The invention is not limited by the description with reference to the embodiments. Rather, the invention encompasses any novel feature as well as any combination of features, which in particular includes any combination of features in the patent claims, even if this feature or combination itself is not explicitly stated in the patent claims or the exemplary embodiments.

Claims (15)

Semiconductor device ( 1 ) having a plurality of emission regions ( 10 ), in which at least one emission region comprises a semiconductor body ( 2 ) with an active region provided for generating radiation ( 20 ), and with a carrier ( 3 ), which has a mounting surface ( 34 ), wherein the semiconductor body is arranged on a side facing away from the mounting surface of the carrier and between the active region and the mounting surface a deflection device ( 6 ), which is designed to deflect the active region during operation of the semiconductor component relative to the mounting surface is formed. Semiconductor component according to claim 1, wherein the deflection device is formed by means of a columnar region ( 31 ) of the carrier, wherein the columnar region between a base region ( 32 ) of the carrier and the active region and along at least one direction has a smaller lateral extent than the active region. Semiconductor component according to claim 2, wherein the carrier has an integrally formed carrier body ( 30 ) which forms the columnar region and the base region for at least two emission regions. Semiconductor component according to Claim 2 or 3, wherein the deflection device has an electrode arrangement (11) on a side of the base region facing the semiconductor body. 35 ) and a counter electrode arrangement arranged between the electrode arrangement and the active region ( 36 ) having. Semiconductor component according to one of the preceding claims, wherein the carrier has a through-connection ( 37 ), with which the active area is electrically contacted by the mounting surface. Semiconductor component according to one of the preceding claims, wherein the carrier comprises a semiconductor material. Semiconductor component according to one of the preceding claims, wherein the semiconductor body is integrally connected to the carrier and a growth substrate ( 28 ) is removed for the semiconductor body. Semiconductor component according to one of the preceding claims, wherein the semiconductor body on a side facing away from the carrier side a beam-shaping element ( 29 ) having. Semiconductor component according to one of the preceding claims, wherein a spatial radiation characteristic of the semiconductor device by means of an electrically induced deflection of the at least one active region is adjustable. Semiconductor component according to one of the preceding claims, wherein - the active region between a first semiconductor layer facing away from the carrier ( 21 ) and a second semiconductor layer ( 22 ) is arranged; - The semiconductor body at least one recess ( 25 ) extending through the second semiconductor layer and the active region; The first semiconductor layer with a first connection layer ( 23 ) is electrically connected, which extends through the recess therethrough; Between the carrier and the second semiconductor layer, a second connection layer ( 32 ) is arranged, with which the second semiconductor layer is electrically conductively connected; and - the second connection layer extends in regions between the first connection layer and the carrier. Radiation source with a semiconductor device according to one of the preceding claims, wherein the radiation source is designed as an adaptive headlight, an adaptive flash or a 3D display device. Method for producing a semiconductor component ( 1 ) having a plurality of emission regions ( 10 ) mounted on a support ( 3 ) with a mounting surface ( 34 ), comprising the steps of: a) arranging a semiconductor layer sequence ( 200 ) with an active region provided for generating radiation ( 20 ) on one of the mounting surfaces ( 34 ) facing away from the carrier; b) forming a plurality of semiconductor bodies ( 2 ) from the semiconductor layer sequence; and c) forming at least one deflection device ( 6 ) associated with an emission area and designed to deflect the active area of the emission area relative to the mounting area. The method of claim 12, wherein the deflection device after arranging the semiconductor layer sequence by means of selectively removing a sacrificial layer. 38 ) of the carrier. Method according to Claim 12 or 13, in which the semiconductor layer sequence is deposited on a growth substrate ( 28 ) and the growth substrate is removed after attachment to the carrier. Method according to one of claims 12 to 14, wherein a semiconductor device according to any one of claims 1 to 10 is produced.

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