DE102015220144A1 - Optical system and lithography system - Google Patents

Abstract

An optical system (138) for a lithography system (100) is disclosed, comprising an obscuration diaphragm (200) for blocking at least a region (204) of a beam path (206), and a manipulation device (202) for manipulating a position, tilting, a size and / or shape of the obscuration panel (200).

Description

The present invention relates to an optical system for a lithography apparatus, a lithography apparatus and a method for producing a semiconductor element.

Lithography is used to fabricate micro- and nanostructured devices such as integrated circuits. The lithography process is performed with a lithography system having an illumination system and a projection system. The image of a mask (reticle) illuminated by means of the illumination system is projected by the projection system onto a substrate (eg a silicon wafer) coated with a photosensitive layer (photoresist) and arranged in the image plane of the projection system in order to apply the mask structure to the photosensitive layer Transfer coating of the substrate.

Driven by the quest for ever smaller structures in the manufacture of integrated circuits, EUV lithography systems are currently being developed which use light with a wavelength in the range of 0.1 nm to 30 nm, in particular 13.5 nm. In such EUV lithography equipment, because of the high absorption of most materials of light of this wavelength, reflective optics, that is, mirrors, must be used instead of - as before - refractive optics, that is, lenses.

Modern lithography systems have very high demands on the position accuracy and scale accuracy of the imaged structures. To meet these requirements, optical systems for lithography equipment can be designed telecentric. Accordingly, the beams (more precisely: the main beams of the beams) impinge perpendicularly on the image plane (ie the wafer) in all field points. This ensures that the defocusing of the image plane, the lateral position of the pixels is maintained and so the structures are blurred, but still displayed in the correct position and with the correct scale. Such defocusing can not be avoided and occurs e.g. due to inaccuracies in the mounting of the substrate (English: waferstage) or by the wafer topology itself. Telecentricity is thus subject to tight specifications as an important performance variable.

In lithography systems, the telecentricity of optical systems can be influenced by an aperture stop and, if present, an obscuration stop.

The US 8,421,998 B2 discloses a manipulatable aperture stop.

Against this background, it is an object of the present invention to provide an improved optical system, an improved lithography apparatus and an improved method for producing a semiconductor element.

Accordingly, an optical system for a lithography system is provided which has an obscuration diaphragm for blocking at least a portion of a beam path and a manipulation device for manipulating a position, a tilt, a size and / or a shape of the obscuration diaphragm.

Because the manipulation device can change the position, the tilt, the size and / or the shape of the obscuration diaphragm, it is possible to adapt the obscuration diaphragm to the beam path such that the optical system enables a telecentric imaging, in particular a telecentric image on the image side.

The obscuration diaphragm is a diaphragm which blocks a portion of the beam path. The obscuration diaphragm is arranged exclusively within the beam path. In particular, the obscuration diaphragm can be designed as a flat element.

The manipulation of the obscuration stop, i. the change in obscuration aperture in position, tilt, size and / or shape can reduce a telecenter error. The telecentricity error is the deviation from an optimal telecentric imaging of an optical system.

In particular, the manipulation device can change the position of the obscuration diaphragm. For this purpose, the obscuration diaphragm in the three translational degrees of freedom can be moved by the manipulation device.

Furthermore, the manipulation device can tilt the obscuration diaphragm in particular. For this purpose, the obscuration diaphragm can be tilted by the manipulation device in two rotational degrees of freedom. The axes about which the obscuration diaphragm can be tilted are perpendicular to the direction of the beam path.

Furthermore, the manipulation device can reduce or enlarge the size of the obscuration diaphragm. The size of the obscuration diaphragm corresponds to the area of the beam path which is blocked by the obscuration diaphragm.

Furthermore, the manipulation device can change the shape of the obscuration diaphragm. For example, the obscuration diaphragm can have one or more planar elements, so that the shape of the obscuration diaphragm results from the superimposed forms of the planar elements.

According to one embodiment of the optical system, the manipulation device has an actuator, in particular a piezoelectric element, for deforming, tilting and / or displacing the obscuration diaphragm. Advantageously, the obscuration diaphragm can be displaced by means of an actuator. As a result, the position of the obscuration diaphragm relative to the beam path can be changed. Furthermore, the obscuration diaphragm can be deformed by means of an actuator. The deformation causes a change in the size of the area of the beam path blocked by the obscuration diaphragm.

According to a further embodiment of the optical system, the obscuration diaphragm has a first element and a second element. In this case, the second element is displaceable relative to the first element by means of the manipulation device for changing the region of the beam path blocked by means of the obscuration diaphragm. By allowing the second element to be displaced relative to the first element, it is possible to change the size of the obscuration plate. Thus, the size of the blocked area in the beam path can be changed by means of the obscuration diaphragm.

According to a further embodiment of the optical system, the manipulation device has at least one rod-shaped element with the actuator. By means of the at least one rod-shaped element, the obscuration diaphragm can be displaced relative to the beam path. In the event that the obscuration diaphragm is formed from a deformable material, or that the obscuration diaphragm has a plurality of mutually displaceable elements, the shape of the obscuration diaphragm can be changed by means of the deflection of the rod-shaped element.

According to a further embodiment of the optical system, this further comprises a holder, wherein the at least one rod-shaped element is connected to the obscuration diaphragm and to the holder. Advantageously, the at least one rod-shaped element is connected to the holder, so that a force caused by the deflection of the rod-shaped element can be transmitted to the obscuration diaphragm in order to deform and / or displace it.

According to a further embodiment of the optical system, a plurality of rod-shaped elements, in particular two, three, four, five, six, seven or eight rod-shaped elements are provided. Advantageously, the rod-shaped elements can be arranged so that they do not interfere with the beam path.

According to a further embodiment of the optical system, the latter furthermore has at least one sensor for determining the position, the tilt, the size and / or the shape of the obscuration diaphragm. Advantageously, it can be determined by means of the at least one sensor whether the obscuration diaphragm is suitably arranged. It may be meant to be suitably arranged that a telecentricity error is minimized.

According to a further embodiment of the optical system, the latter furthermore has a control device for activating the manipulation device. Because a control device is provided, the manipulation device can readjust the position, the tilt, the size and / or the shape of the obscuration diaphragm constantly during operation of the lithography system.

According to a further embodiment of the optical system, the control device is set up to control the manipulation device on the basis of a telecentric measurement and / or on the basis of the position, tilt, size and / or shape of the obscuration diaphragm determined by the at least one sensor. Advantageously, the control device receives data of a telecentric measurement and / or data or signals from the at least one sensor. With this information, the control device can control the manipulation device so that the position, tilt, size and / or shape of the obscuration diaphragm is suitably adjusted. In this case, suitably adjusted means that a telecentricity error is minimized.

According to a further embodiment of the optical system, the control device is set up to control the manipulation device in accordance with the beam path in order to adapt the position, tilt, size and / or shape of the obscuration diaphragm to the beam path. The illumination settings and the mask structures can influence the beam path. Accordingly, consideration of the beam path can lead to a consideration of the illumination settings and the mask structures. In particular, in the so-called scanning mode, i. In the operating mode of the lithography system in which the radiation of the lithography system travels over the wafer, the illumination settings can be decisive.

According to a further embodiment of the optical system, the manipulation device is set up, the position, the tilt, the Size and / or change the shape of the obscuration iris continuously or discontinuously. Particularly in the scan mode, telecentricity errors (possibly field-dependent) may occur, structure-width errors due to a change in uniformity or variation of the illumination distribution and / or structural asymmetries. In principle, each of the errors mentioned along the scanning path, ie the path on the wafer, can change by more than 10% or by more than 20% or by more than 50%. Advantageously, the manipulation device can react thereto and manipulate the obscuration diaphragm continuously or discontinuously, for example within fixed time intervals.

According to a further embodiment of the optical system, the latter furthermore has a first optical device and a second optical device, wherein the obscuration diaphragm is arranged between the first and the second optical device. Advantageously, the obscuration diaphragm is arranged at a suitable location of the optical system.

According to a further embodiment of the optical system, the first optical device and / or the second optical device have a mirror. In particular, EUV systems may have mirrors.

According to a further embodiment of the optical system, this further comprises an aperture diaphragm for limiting the beam path, wherein the obscuration diaphragm is arranged within the aperture diaphragm. The aperture stop is also called aperture stop and limits the optical path of an optical system. In contrast, the obscuration diaphragm blocks part of the beam path. The obscuration aperture may be located in the center of the aperture defined by the aperture stop. In particular, the obscuration diaphragm can be fastened to the aperture diaphragm.

According to a further embodiment of the optical system, the aperture diaphragm has a plurality of movable elements. In this case, the manipulation device is set up to move the movable elements continuously or discontinuously. By means of the movable elements, the size and shape of the opening of the aperture diaphragm can be adjusted. In particular, the opening of the aperture diaphragm can be adjusted during operation of the lithography system.

According to a further embodiment of the optical system, the manipulation device is set up, the position, the tilt, the size and / or the shape of the obscuration diaphragm in a time period below 100 ms, preferably below 40 ms and even more preferably below 20 ms to reach a telecentric image of the optical system adapted and / or the manipulation device is adapted to adjust the movable elements of the aperture in a period of time below 100 ms, preferably below 40 ms and even more preferably below 20 ms to achieve a telecentric imaging of the optical system ,

Due to the fact that the obscuration diaphragm and / or the aperture stop can be changed in said short periods of time, it is possible to react quickly enough to the changes in the beam path which result during a scanning operation of the lithography system.

Furthermore, a lithography system, in particular EUV or DUV lithography system, with an optical system, as described, provided. EUV stands for "extreme ultraviolet" and denotes a working light wavelength between 0.1 and 30 nm. DUV stands for "deep ultraviolet" and denotes a working light wavelength between 30 and 250 nm.

Further provided is a method of manufacturing a semiconductor element using an optical system as described or a lithography apparatus as described.

The embodiments and features described for the proposed optical system apply correspondingly to the proposed lithographic system and the proposed method.

Further possible implementations of the invention also include not explicitly mentioned combinations of features or embodiments described above or below with regard to the exemplary embodiments. The skilled person will also add individual aspects as improvements or additions to the respective basic form of the invention.

Further advantageous embodiments and aspects of the invention are the subject of the dependent claims and the embodiments of the invention described below. Furthermore, the invention will be explained in more detail by means of preferred embodiments with reference to the attached figures.

1A shows a schematic view of an EUV lithography system;

1B shows a schematic view of a DUV lithography system;

2A shows a schematic view of an optical system;

2 B shows a schematic view of the optical system 2A in a disturbed state;

3A shows a schematic view of another optical system;

3B shows a schematic view of the further optical system 3A with bent obscuration panel;

4A shows a schematic view of another optical system;

4B shows a schematic view of the further optical system 4A with enlarged obscuration diaphragm;

5 shows a schematic view of another optical system;

6A to 6I show different intensity distributions in the illumination pupil; and

7 shows a schematic view of another optical system.

Unless otherwise indicated, like reference numerals in the figures denote like or functionally identical elements. It should also be noted that the illustrations in the figures are not necessarily to scale.

1A shows a schematic view of an EUV lithography system 100A which is a beam shaping and illumination system 102 and a projection system 104 includes. EUV stands for "extreme ultraviolet" (Engl.: Extreme ultraviolet, EUV) and refers to a working light wavelength between 0.1 and 30 nm. The beam shaping and illumination system 102 and the projection system 104 are each provided in a vacuum housing, wherein each vacuum housing is evacuated by means of an evacuation device, not shown. The vacuum housings are surrounded by a machine room, not shown, in which the drive devices are provided for the mechanical method or adjustment of the optical elements. Furthermore, electrical controls and the like may be provided in this engine room.

The EUV lithography system 100A has an EUV light source 106A on. As an EUV light source 106A For example, a plasma source or a synchrotron can be provided, which radiation 108A in the EUV range (extreme ultraviolet range), ie in the wavelength range from 0.1 nm to 30 nm, for example. In the beam-forming and lighting system 102 becomes the EUV radiation 108A bundled and the desired operating wavelength from the EUV radiation 108A filtered out. The from the EUV light source 106A generated EUV radiation 108A has a relatively low transmissivity by air, which is why the beam guiding spaces in the beam-forming and lighting system 102 and in the projection system 104 are evacuated.

This in 1A illustrated beam shaping and illumination system 102 has five mirrors 110 . 112 . 114 . 116 . 118 on. After passing through the beam shaping and lighting system 102 becomes the EUV radiation 108A on the photomask (English: reticle) 120 directed. The photomask 120 is also designed as a reflective optical element and can be outside the systems 102 . 104 be arranged. Next, the EUV radiation 108A by means of a mirror 136 be directed to the photomask. The photomask 120 has a structure which, by means of the projection system 104 reduced to a wafer 122 or the like is mapped.

The projection system 104 has six mirrors M1-M6 for imaging the photomask 120 on the wafer 122 on. In this case, individual mirrors M1-M6 of the projection system 104 symmetrical to the optical axis 124 of the projection system 104 be arranged. It should be noted that the number of mirrors of the EUV lithography system 100A is not limited to the number shown. It can also be provided more or less mirror. Furthermore, the mirrors are usually curved at the front for beam shaping.

1B shows a schematic view of a DUV lithography system 100B which is a beam shaping and illumination system 102 and a projection system 104 includes. DUV stands for "deep ultraviolet" (English: deep ultraviolet, DUV) and denotes a wavelength of the working light between 30 and 250 nm. The beam shaping and illumination system 102 and the projection system 104 are surrounded by a machine room, not shown, in which the drive devices are provided for the mechanical method or adjustment of the optical elements. The DUV lithography system 100B also has a control device 126 for controlling various components of the DUV lithography system 100B on. In this case, the control device 126 with the beam shaping and illumination system 102 , a DUV light source 106B , a holder 128 the photomask 120 (English: reticle stage) and a holder 130 of the wafer 122 (Engl .: wafer stage) connected.

The DUV lithography system 100B has a DUV light source 106B on. As a DUV light source 106B For example, an ArF excimer laser can be provided, which radiation 108B in the DUV area 193 nm emitted.

This in 1B illustrated beam shaping and illumination system 102 directs the DUV radiation 108B on a photomask 120 , The photomask 120 is designed as a transmissive optical element and can be outside the systems 102 . 104 be arranged. The photomask 120 has a structure which, by means of the projection system 104 reduced to a wafer 122 or the like is mapped.

The projection system 104 has several lenses 132 and / or mirrors 134 for imaging the photomask 120 on the wafer 122 on. This can be individual lenses 132 and / or mirrors 134 of the projection system 104 symmetrical to the optical axis 124 of the projection system 104 be arranged. It should be noted that the number of lenses and mirrors of the DUV lithography system 100B is not limited to the number shown. There may also be more or fewer lenses and / or mirrors. In particular, the beamforming and illumination system 102 the DUV lithography system 100B several lenses and / or mirrors. Furthermore, the mirrors are usually curved at the front for beam shaping.

The EUV lithography system 100A in 1A and the DUV lithography system 100B in 1B each show an optical system 138 with an obscuration diaphragm, which in the respective projection system 104 is arranged. The optical system 138 However, it can also be located elsewhere in the respective projection systems 104 or in the respective lithography plants 100A . 100B be arranged.

2A shows a schematic view of an optical system 138 , The optical system 138 has an obscuration shutter 200 and a manipulation device 202 on. The Obskurationsbrende blocked 200 at least one area 204 a beam path 206 , The manipulation device 202 may be a position, a tilt, a size, and / or a shape of the obscuration panel 200 manipulate.

Optionally, the optical system 138 a first optical device 208 and a second optical device 210 exhibit. The obscuration panel is here 200 between the first and second optical devices 208 . 210 arranged. Next, the first optical device 208 and / or the second optical device 210 have one or more mirrors.

In 2A is a picture-side telecentric figure shown. The exit pupil lies in the infinite. An object from the object plane 212 becomes an image in the image plane 214 displayed. This is where the main rays meet 216 perpendicular to the image plane 214 ,

The optical system 138 can, as in 1A represented, may be arranged. In this case, the photomask 120 in the object plane and the wafer 122 in the image plane of the optical system 138 lie. In particular, the optical system 138 the projection system 104 be.

Next, the manipulation device 202 an actor 218 exhibit. The actor 218 used to deform and / or move the obscuration 200 , In particular, the actuator 218 a piezo element 220 exhibit the movement of the actuator 218 to realize. In addition, the optical system 138 optionally an aperture stop 222 exhibit.

Furthermore, the optical system 138 with a sensor 224 be provided. The sensor 224 is used to determine the position, tilt, size and / or shape of the obscuration panel 200 , Alternatively, you can also use several sensors 224 be provided.

Next, the optical system 138 a control device 226 for driving the manipulation device 202 exhibit. In this case, the control device 226 with the sensor 224 and with the manipulation device 202 be connected. The connections can be realized via electrical lines and / or by radio. 2A shows an electrical line 228 which the control device 226 with the sensor 224 combines. The control device 226 and the manipulation device 202 are in 2A connected via a radio link.

2 B shows a schematic view of the optical system 138 out 2A in disturbed condition. During operation or during assembly of the lithography system 100 occurring disturbances can the imaging quality of the lithography 100 influence negatively. Manipulators can be installed to minimize wavefront aberrations. Both the disturbances themselves and the manipulator movements can lead to how 2 B illustrates that the beam paths 206 in the disturbed optical system 138 in comparison to the undisturbed optical system 138 are shifted. The main rays 216 therefore no longer meet perpendicular to the image plane 214 and the exit pupil is no longer in the infinite. In the disturbed optical system 138 stands the obscuration panel 200 no longer in the optimal position, so that a telecentric error arises.

The control device 226 can the manipulation device 202 so drive that the obscuration 200 is manipulated such that a telecentric imaging of the optical system 138 preserved. For the control device 226 the manipulation device 202 on the basis of a telecentric measurement of the optical system 138 and / or based on that of the sensor 224 determined position, tilt, size and / or shape of Obskurationsbrende 200 drive. In particular, the obscuration aperture 200 be tilted by the tilt angle α.

3A shows a schematic view of another optical system 138 , You can see an obscuration panel 200 with a manipulation device arranged thereon 202 , The obscuration panel 200 is not curved and has a diameter D1 for the blocked area 204 on. For a circular obscuration screen 200 the diameter D1 defines the size of the obscuration diaphragm when perpendicular to the beam path 206 is arranged.

3B shows a schematic view of the further optical system 138 out 3A with curved obscuration diaphragm 200 , By means of the manipulation device 202 can the obscuration shutter 200 to be bent. The blocked area 204 , ie the size of the curved obscuration diaphragm 200 , has a diameter D2, wherein the diameter D2 is smaller than the diameter D1. Accordingly, by means of the manipulation device 202 the size D1, D2 and / or shape of the obscuration diaphragm 200 to be changed.

4A shows a schematic view of another optical system 138 , Shown is the obscuration panel 200 , The manipulation device 202 lies behind the obscuration panel 200 and is therefore not visible. The obscuration panel 200 has a first element 400 and a second element 402 on. The second element 402 lies behind the first element 400 and therefore can not be seen.

4B shows a schematic view of the further optical system 138 out 4A with enlarged obscuration diaphragm 200 , The second element 402 can be compared to the first element 400 by means of the manipulation device 202 be moved. The displacement of the second element 402 results in a change in the size and shape of the obscuration diaphragm 200 and thus to a change of the blocked area 204 of the beam path 206 ,

5 shows a schematic view of another optical system 138 , The manipulation device 202 can have four rod-shaped elements 500 exhibit. In this case, each rod-shaped element 500 with an actor 502 be provided. The actors 502 In particular, in each case a piezoelectric element 504 exhibit the position, tilt, size and / or shape of the obscuration shutter 200 to change.

The optical system 138 can continue a bracket 506 exhibit. In this case, the rod-shaped elements 500 with the bracket 506 and with the obscuration panel 200 be connected. It can have one or more rod-shaped elements 500 be provided. In particular, one, two, three, four, five, six, seven, eight, nine or ten rod-shaped elements 500 be provided.

Another telecentricity error results in the scanning operation of the lithography system 100 , ie in the operating mode of the lithography system 100 in which the radiation of the lithography system 100 over the wafer 122 migrates, from that the wafer 122 is tilted. Along a scan path, the focal position changes for a given point on the wafer 122 , Together with the telecentric error, a distortion contribution occurs.

6A to 6I show different intensity distributions 600 in the lighting pupil 602 who are looking for a lighting system 102 with honeycomb condenser. 6A shows the illumination of the illumination pupil 602 at the beginning of the scan path and 6I shows the illumination of the illumination pupil 602 at the end of the scan path. How to do that 6A to 6I only part of the illumination pupil can be seen at the beginning and at the end of the scan path 602 illuminated and the Y-dipole is present only in the middle of the scan path. This corresponds to an energetic telecentric error. In combination with a tilted wafer 122 it comes to a distortion contribution.

The effects described above can affect the beam path 206 of the optical system 138 impact. Accordingly, the control device 226 the manipulation device 202 according to the beam path 206 Control the position, tilt, size and / or shape of the obscuration shutter 200 optimally adapted to the beam path. It can optimally to the beam path 206 Adjust mean that the telecentricity error is minimized.

Next, the manipulation device 202 the position, tilt, size, and / or shape of the obscuration panel 200 change continuously or at fixed time intervals. This can be the obscuration 200 at any time during operation of the lithography system 100 be adjusted.

7 shows a schematic view of another optical system 138 , This in 7 shown optical system 138 additionally has an aperture stop 222 for limiting the beam path 206 on. This can be the obscuration 200 within the aperture stop 222 be arranged. Next, the aperture diaphragm 222 and the obscuration panel 200 lie in one plane.

The aperture stop 222 can have several moving elements 700 exhibit. The arrow 702 in 7 indicates that the moving elements 700 can move in the radial direction. Next, the manipulation device 202 the moving elements 700 move continuously or at fixed time intervals. This can be the limitation of the aperture 222 at any time during operation of the lithography system 100 be adjusted.

The obscuration panel 200 and the aperture stop 222 can be manipulated very quickly to scan in the lithography system 100 to fix the telecentric errors. The manipulation device 202 can be the position, the tilt, the size and / or the shape of the obscuration 200 in a period below 100 ms, below 40 ms or below 20 ms. Next, the manipulation device 202 the moving elements 700 the aperture stop 222 in a period below 100 ms, below 40 ms or below 20 ms.

The manipulation in a period below 100 ms, below 40 ms or below 20 ms can be achieved by means of highly dynamic hexapods. It can be a special design with solid joints are used, which completely dispenses with rolling and rubbing elements, thereby allowing a backlash-free movement without mechanical noise.

The described manipulations of the obscuration diaphragm 200 can be combined and done simultaneously. In particular, the obscuration aperture 200 , as in 2 B shown, tilted and in addition, as in 3B shown, curved.

Although the invention has been described with reference to various embodiments, it is by no means limited thereto, but variously modifiable.

LIST OF REFERENCE NUMBERS

100

 lithography system

100A

 EUV lithography system

100B

 DUV lithography system

102

 Beam shaping and lighting system

104

 projection system

106A

 EUV-light source

106B

 DUV light source

108A

 EUV radiation

108B

 DUV radiation

110

 mirror

112

 mirror

114

 mirror

116

 mirror

118

 mirror

120

 photomask

122

 wafer

124

 optical axis of the projection system

126

 control device

128

 Holder of the photomask

130

 Holder of the wafer

132

 lens

134

 mirror

136

 mirror

138

 optical system

200

 obscuration

202

 manipulation device

204

 Area

206

 beam path

208

 first optical device

210

 second optical device

212

 object level

214

 image plane

216

 main beam

218

 actuator

220

 piezo element

222

 aperture

224

 sensor

226

 control device

228

 electrical line

400

 first element

402

 second element

500

 rod-shaped element

502

 actuator

504

 piezo element

506

 bracket

600

 intensity distribution

602

 illumination pupil

700

 movable element

702

 arrow

M1-M6

 mirror

D1

 Diameter, size

D2

 Diameter, size

α

 tilt

QUOTES INCLUDE IN THE DESCRIPTION

This list of the documents listed by the applicant has been generated automatically and is included solely for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions.

Cited patent literature

• US 8421998 B2 [0006]

Claims (15)

Optical system ( 138 ) for a lithography plant ( 100 ), having an obscuration diaphragm ( 200 ) for blocking at least one area ( 204 ) of a beam path ( 206 ), and a manipulation device ( 202 ) for manipulating a position, a tilt (α), a size (D1, D2) and / or a shape of the obscuration diaphragm ( 200 ). Optical system according to claim 1, wherein the manipulation device ( 202 ) an actor ( 218 ), in particular a piezo element ( 220 ), for deforming, tilting and / or shifting the obscuration diaphragm ( 200 ) having. Optical system according to claim 1 or 2, wherein the obscuration diaphragm ( 200 ) a first element ( 400 ) and a second element ( 402 ) and wherein the second element ( 402 ) compared to the first element ( 400 ) by means of the manipulation device ( 202 ) for changing by means of the obscuration diaphragm ( 200 ) blocked area ( 204 ) of the beam path ( 206 ) is displaceable. Optical system according to one of claims 2 or 3, wherein the manipulation device ( 202 ) at least one rod-shaped element ( 500 ) with the actuator ( 502 ) having. An optical system according to claim 4, further comprising a holder ( 506 ), wherein the at least one rod-shaped element ( 500 ) with the obscuration diaphragm ( 200 ) and with the bracket ( 506 ) connected is. Optical system according to one of claims 1 to 5, further comprising at least one sensor ( 224 ) for determining the position, the tilt (α), the size (D1, D2) and / or the shape of the obscuration diaphragm ( 200 ). An optical system according to any one of claims 1 to 6, further comprising a control device ( 226 ) for driving the manipulation device ( 202 ). Optical system according to claim 7, wherein the control device ( 226 ), the manipulation device ( 202 ) on the basis of a telecentric measurement and / or on the basis of the at least one sensor ( 224 ), tilt (α), size (D1, D2) and / or shape of the obscuration diaphragm ( 200 ) to control. Optical system according to claim 7 or 8, wherein the control device ( 226 ), the manipulation device ( 202 ) according to the beam path ( 206 ) to control the position, tilt (α), size (D1, D2) and / or shape of the obscuration diaphragm ( 200 ) to the beam path ( 206 ). Optical system according to one of claims 1 to 9, wherein the manipulation device ( 202 ), the position, the tilt (α), the size (D1, D2) and / or the shape of the obscuration diaphragm ( 200 ) continuously or discontinuously. An optical system according to any one of claims 1 to 10, further comprising an aperture stop ( 222 ) for limiting the beam path ( 206 ), whereby the obscuration diaphragm ( 200 ) within the aperture diaphragm ( 222 ) is arranged. An optical system according to claim 11, wherein the aperture diaphragm ( 222 ) several movable elements ( 700 ) and wherein the manipulation device ( 202 ) is adapted to the moving elements ( 700 ) to move continuously or discontinuously. Optical system according to one of claims 1 to 12, wherein the manipulation device ( 202 ), the position, the tilt (α), the size (D1, D2) and / or the shape of the obscuration diaphragm ( 200 ) in a time of less than 100 ms, preferably less than 40 ms, and even more preferably less than 20 ms, for achieving a telecentric imaging of the optical system ( 138 ) and / or wherein the manipulation device ( 202 ), the movable elements ( 700 ) the aperture diaphragm ( 222 ) in a time of less than 100 ms, preferably less than 40 ms, and even more preferably less than 20 ms, for achieving a telecentric imaging of the optical system ( 138 ). Lithography plant ( 100 ) with an optical system ( 138 ) according to one of claims 1 to 13. Method for producing a semiconductor element ( 122 ) using an optical system ( 138 ) according to one of claims 1 to 13 or a lithographic system ( 100 ) according to claim 14.

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