DE10218990B4 - Nichtflüchtiges Speicherbauelement und Verfahren zur Herstellung sowie zum Programmieren, Lesen und Löschen von Daten - Google Patents

Nichtflüchtiges Speicherbauelement und Verfahren zur Herstellung sowie zum Programmieren, Lesen und Löschen von Daten Download PDF

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Publication number
DE10218990B4
DE10218990B4 DE10218990A DE10218990A DE10218990B4 DE 10218990 B4 DE10218990 B4 DE 10218990B4 DE 10218990 A DE10218990 A DE 10218990A DE 10218990 A DE10218990 A DE 10218990A DE 10218990 B4 DE10218990 B4 DE 10218990B4
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Prior art keywords
programming
reading
making
memory device
volatile memory
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Expired - Fee Related
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DE10218990A
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DE10218990A1 (de
Inventor
Seong-Gyun Kim
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66833—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a charge trapping gate insulator, e.g. MNOS transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • G11C16/0475—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS] comprising two or more independent storage sites which store independent data
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • H01L29/7923—Programmable transistors with more than two possible different levels of programmation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
DE10218990A 2001-04-25 2002-04-24 Nichtflüchtiges Speicherbauelement und Verfahren zur Herstellung sowie zum Programmieren, Lesen und Löschen von Daten Expired - Fee Related DE10218990B4 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR10-2001-0022389A KR100389130B1 (ko) 2001-04-25 2001-04-25 2비트 동작의 2트랜지스터를 구비한 불휘발성 메모리소자

Publications (2)

Publication Number Publication Date
DE10218990A1 DE10218990A1 (de) 2002-11-07
DE10218990B4 true DE10218990B4 (de) 2007-05-16

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DE10218990A Expired - Fee Related DE10218990B4 (de) 2001-04-25 2002-04-24 Nichtflüchtiges Speicherbauelement und Verfahren zur Herstellung sowie zum Programmieren, Lesen und Löschen von Daten

Country Status (5)

Country Link
US (6) US6768681B2 (de)
JP (1) JP4412881B2 (de)
KR (1) KR100389130B1 (de)
DE (1) DE10218990B4 (de)
TW (1) TW541693B (de)

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Also Published As

Publication number Publication date
US20040223356A1 (en) 2004-11-11
US20020196665A1 (en) 2002-12-26
US6912162B2 (en) 2005-06-28
US20050002226A1 (en) 2005-01-06
KR20020082668A (ko) 2002-10-31
JP4412881B2 (ja) 2010-02-10
DE10218990A1 (de) 2002-11-07
US20040219734A1 (en) 2004-11-04
US20040218445A1 (en) 2004-11-04
JP2003017600A (ja) 2003-01-17
US6768681B2 (en) 2004-07-27
TW541693B (en) 2003-07-11
US20050218444A1 (en) 2005-10-06
US6861699B2 (en) 2005-03-01
US7075144B2 (en) 2006-07-11
US6900089B2 (en) 2005-05-31
KR100389130B1 (ko) 2003-06-25
US6922361B2 (en) 2005-07-26

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