DE10244447A1 - Strahlungsemittierendes Halbleiterbauelement mit vertikaler Emissionsrichtung und Herstellungsverfahren dafür - Google Patents

Strahlungsemittierendes Halbleiterbauelement mit vertikaler Emissionsrichtung und Herstellungsverfahren dafür Download PDF

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Publication number
DE10244447A1
DE10244447A1 DE2002144447 DE10244447A DE10244447A1 DE 10244447 A1 DE10244447 A1 DE 10244447A1 DE 2002144447 DE2002144447 DE 2002144447 DE 10244447 A DE10244447 A DE 10244447A DE 10244447 A1 DE10244447 A1 DE 10244447A1
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DE
Germany
Prior art keywords
layer
semiconductor
reflector
contact
semiconductor component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE2002144447
Other languages
German (de)
English (en)
Other versions
DE10244447B4 (de
Inventor
Georg Dr. Brüderl
Alfred Lell
Dominik Dr. Eisert
Hans-Jürgen Dr. Lugauer
Johannes Dr. Baur
Uwe Dr. Strauss
Stephan Dr. Kaiser
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to DE2002144447 priority Critical patent/DE10244447B4/de
Publication of DE10244447A1 publication Critical patent/DE10244447A1/de
Application granted granted Critical
Publication of DE10244447B4 publication Critical patent/DE10244447B4/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H01L33/105—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector with a resonant cavity structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H01L33/465—Reflective coating, e.g. dielectric Bragg reflector with a resonant cavity structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
DE2002144447 2002-09-24 2002-09-24 Strahlungsemittierendes Halbleiterbauelement mit vertikaler Emissionsrichtung und Herstellungsverfahren dafür Expired - Lifetime DE10244447B4 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE2002144447 DE10244447B4 (de) 2002-09-24 2002-09-24 Strahlungsemittierendes Halbleiterbauelement mit vertikaler Emissionsrichtung und Herstellungsverfahren dafür

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2002144447 DE10244447B4 (de) 2002-09-24 2002-09-24 Strahlungsemittierendes Halbleiterbauelement mit vertikaler Emissionsrichtung und Herstellungsverfahren dafür

Publications (2)

Publication Number Publication Date
DE10244447A1 true DE10244447A1 (de) 2004-04-01
DE10244447B4 DE10244447B4 (de) 2006-06-14

Family

ID=31969521

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2002144447 Expired - Lifetime DE10244447B4 (de) 2002-09-24 2002-09-24 Strahlungsemittierendes Halbleiterbauelement mit vertikaler Emissionsrichtung und Herstellungsverfahren dafür

Country Status (1)

Country Link
DE (1) DE10244447B4 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1770792A2 (fr) * 2005-09-29 2007-04-04 Osram Opto Semiconductors GmbH Puce à semi-conducteur émetteur de lumière
WO2008043526A1 (fr) * 2006-10-10 2008-04-17 Firecomms Limited Dispositifs optiques d'émission en surface
CN111758193A (zh) * 2017-12-28 2020-10-09 普林斯顿光电子公司 窄光束发散半导体源

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69105037T2 (de) * 1990-05-21 1995-03-23 At & T Corp Oberflächenemittierende Laser mit vertikalem Resonator und leitenden Spiegeln.
DE69209630T2 (de) * 1991-12-27 1996-08-22 At & T Corp Optische Vorrichtungen mit einem durch Elektronenstrahlbedampfung hergestellten Mehrfachschichtspiegel

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5874747A (en) * 1996-02-05 1999-02-23 Advanced Technology Materials, Inc. High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same
DE19723677A1 (de) * 1997-06-05 1998-12-10 Siemens Ag Optoelektronisches Halbleiterbauelement

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69105037T2 (de) * 1990-05-21 1995-03-23 At & T Corp Oberflächenemittierende Laser mit vertikalem Resonator und leitenden Spiegeln.
DE69209630T2 (de) * 1991-12-27 1996-08-22 At & T Corp Optische Vorrichtungen mit einem durch Elektronenstrahlbedampfung hergestellten Mehrfachschichtspiegel

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1770792A2 (fr) * 2005-09-29 2007-04-04 Osram Opto Semiconductors GmbH Puce à semi-conducteur émetteur de lumière
EP1770792A3 (fr) * 2005-09-29 2011-05-25 OSRAM Opto Semiconductors GmbH Puce à semi-conducteur émetteur de lumière
WO2008043526A1 (fr) * 2006-10-10 2008-04-17 Firecomms Limited Dispositifs optiques d'émission en surface
CN111758193A (zh) * 2017-12-28 2020-10-09 普林斯顿光电子公司 窄光束发散半导体源
US11916355B2 (en) 2017-12-28 2024-02-27 Princeton Optronics, Inc. Narrow beam divergence semiconductor sources

Also Published As

Publication number Publication date
DE10244447B4 (de) 2006-06-14

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8364 No opposition during term of opposition
R071 Expiry of right