DE10244447B4 - Strahlungsemittierendes Halbleiterbauelement mit vertikaler Emissionsrichtung und Herstellungsverfahren dafür - Google Patents

Strahlungsemittierendes Halbleiterbauelement mit vertikaler Emissionsrichtung und Herstellungsverfahren dafür Download PDF

Info

Publication number
DE10244447B4
DE10244447B4 DE2002144447 DE10244447A DE10244447B4 DE 10244447 B4 DE10244447 B4 DE 10244447B4 DE 2002144447 DE2002144447 DE 2002144447 DE 10244447 A DE10244447 A DE 10244447A DE 10244447 B4 DE10244447 B4 DE 10244447B4
Authority
DE
Germany
Prior art keywords
layer
semiconductor
reflector
sequence
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE2002144447
Other languages
German (de)
English (en)
Other versions
DE10244447A1 (de
Inventor
Georg Dr. Brüderl
Alfred Lell
Dominik Dr. Eisert
Hans-Jürgen Dr. Lugauer
Johannes Dr. Baur
Uwe Dr. Strauss
Stephan Dr. Kaiser
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to DE2002144447 priority Critical patent/DE10244447B4/de
Publication of DE10244447A1 publication Critical patent/DE10244447A1/de
Application granted granted Critical
Publication of DE10244447B4 publication Critical patent/DE10244447B4/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H01L33/105—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector with a resonant cavity structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H01L33/465—Reflective coating, e.g. dielectric Bragg reflector with a resonant cavity structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
DE2002144447 2002-09-24 2002-09-24 Strahlungsemittierendes Halbleiterbauelement mit vertikaler Emissionsrichtung und Herstellungsverfahren dafür Expired - Lifetime DE10244447B4 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE2002144447 DE10244447B4 (de) 2002-09-24 2002-09-24 Strahlungsemittierendes Halbleiterbauelement mit vertikaler Emissionsrichtung und Herstellungsverfahren dafür

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2002144447 DE10244447B4 (de) 2002-09-24 2002-09-24 Strahlungsemittierendes Halbleiterbauelement mit vertikaler Emissionsrichtung und Herstellungsverfahren dafür

Publications (2)

Publication Number Publication Date
DE10244447A1 DE10244447A1 (de) 2004-04-01
DE10244447B4 true DE10244447B4 (de) 2006-06-14

Family

ID=31969521

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2002144447 Expired - Lifetime DE10244447B4 (de) 2002-09-24 2002-09-24 Strahlungsemittierendes Halbleiterbauelement mit vertikaler Emissionsrichtung und Herstellungsverfahren dafür

Country Status (1)

Country Link
DE (1) DE10244447B4 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006004591A1 (de) * 2005-09-29 2007-04-05 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip
GB2442767A (en) * 2006-10-10 2008-04-16 Firecomms Ltd A vertical cavity surface emitting optical device
CN111758193A (zh) * 2017-12-28 2020-10-09 普林斯顿光电子公司 窄光束发散半导体源

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69105037T2 (de) * 1990-05-21 1995-03-23 At & T Corp Oberflächenemittierende Laser mit vertikalem Resonator und leitenden Spiegeln.
DE69209630T2 (de) * 1991-12-27 1996-08-22 At & T Corp Optische Vorrichtungen mit einem durch Elektronenstrahlbedampfung hergestellten Mehrfachschichtspiegel
DE19723677A1 (de) * 1997-06-05 1998-12-10 Siemens Ag Optoelektronisches Halbleiterbauelement
US5874747A (en) * 1996-02-05 1999-02-23 Advanced Technology Materials, Inc. High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69105037T2 (de) * 1990-05-21 1995-03-23 At & T Corp Oberflächenemittierende Laser mit vertikalem Resonator und leitenden Spiegeln.
DE69209630T2 (de) * 1991-12-27 1996-08-22 At & T Corp Optische Vorrichtungen mit einem durch Elektronenstrahlbedampfung hergestellten Mehrfachschichtspiegel
US5874747A (en) * 1996-02-05 1999-02-23 Advanced Technology Materials, Inc. High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same
DE19723677A1 (de) * 1997-06-05 1998-12-10 Siemens Ag Optoelektronisches Halbleiterbauelement

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Y.-K. Song et al.: A vertical cavity Light emitting InGaN quantum well heterostructure. In: Applied Physics Letters, Vol. 74, No. 23, 1999, S. 3441-3443 *
Y.-K. Song et al.: Resonant-cavity InGaN quantum- well blue Light-emitting diodes. In: Applied Physics Letters, Vol. 77, No. 12, 2000, S.1744- 1746 *

Also Published As

Publication number Publication date
DE10244447A1 (de) 2004-04-01

Similar Documents

Publication Publication Date Title
EP1709694B1 (fr) Del a film mince ayant une structure d'elargissement de courant
EP1966836B1 (fr) Corps semi-conducteur de del et utilisation d un corps semi-conducteur de del
DE102009018603B4 (de) Leuchtvorrichtung und Herstellungsverfahren derselben
EP1277241B1 (fr) Puce a diode electroluminescente a base de gan
DE102007022947B4 (de) Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
EP2553726B1 (fr) Puce à semi-conducteurs optoélectronique
DE102004057802B4 (de) Strahlungemittierendes Halbleiterbauelement mit Zwischenschicht
DE19953588A1 (de) Waferverbundene Al¶x¶Ga¶y¶In¶z¶N-Strukturen
DE19953609A1 (de) Dickenanpassen von waferverbundenen Al¶x¶Ga¶y¶In¶z¶N-Strukturen durch Laserschmelzen
DE102007019776A1 (de) Optoelektronisches Bauelement und Verfahren zur Herstellung einer Mehrzahl optoelektronischer Bauelemente
DE112007000223T5 (de) Nitridhalbleiterlichtemissionselement mit einer verbesserten Lichtentnahmeeffizienz
EP2057696B1 (fr) Puce de semiconducteur optoélectronique et procédé de sa fabrication
WO2018122103A1 (fr) Diode laser à semi-conducteurs
EP1741144A1 (fr) Procede de production d'une puce a semi-conducteur emettant des rayonnements
EP2273574B1 (fr) Procédé de fabrication d'un composant à diodes luminescentes doté d'une puce à diode luminescente à base de GaN
DE10153321B4 (de) Leuchtdiode mit Bragg-Reflektor und Verfahren zur Herstellung derselben
EP2340568A1 (fr) Corps semi-conducteur optoélectronique
DE112017003572T5 (de) Ultraviolette lichtemittierende diode
DE10208171A1 (de) Strahlungsemittierendes Halbleiterbauelement mit vertikaler Emissionsrichtung und Herstellungsverfahren dafür
DE102005003460A1 (de) Dünnfilm-LED mit einer Stromaufweitungsstruktur
DE10203809B4 (de) Strahlungsemittierendes Halbleiterbauelement
WO2018114483A1 (fr) Puce semi-conductrice optoélectronique et procédé de fabrication d'une puce semi-conductrice optoélectronique
EP2304816B1 (fr) Dispositif électroluminescent et procédé de production d'un dispositif électroluminescent
DE10244447B4 (de) Strahlungsemittierendes Halbleiterbauelement mit vertikaler Emissionsrichtung und Herstellungsverfahren dafür
DE102014114194B4 (de) Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung

Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8364 No opposition during term of opposition
R071 Expiry of right