DE112005001384T5 - II-VI/III-V-Schichtenaufbau auf InP-Träger - Google Patents

II-VI/III-V-Schichtenaufbau auf InP-Träger Download PDF

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Publication number
DE112005001384T5
DE112005001384T5 DE112005001384T DE112005001384T DE112005001384T5 DE 112005001384 T5 DE112005001384 T5 DE 112005001384T5 DE 112005001384 T DE112005001384 T DE 112005001384T DE 112005001384 T DE112005001384 T DE 112005001384T DE 112005001384 T5 DE112005001384 T5 DE 112005001384T5
Authority
DE
Germany
Prior art keywords
iii
layer construction
inp carrier
inp
carrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE112005001384T
Other languages
English (en)
Inventor
Xiaoguang Sun
Thomas J Miller
Michael A Haase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3M Innovative Properties Co
Original Assignee
3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Publication of DE112005001384T5 publication Critical patent/DE112005001384T5/de
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
DE112005001384T 2004-06-18 2005-04-29 II-VI/III-V-Schichtenaufbau auf InP-Träger Withdrawn DE112005001384T5 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/871,424 US7126160B2 (en) 2004-06-18 2004-06-18 II-VI/III-V layered construction on InP substrate
PCT/US2005/015009 WO2006007032A1 (en) 2004-06-18 2005-04-29 Ii-vi/iii-v layered construction on inp substrate

Publications (1)

Publication Number Publication Date
DE112005001384T5 true DE112005001384T5 (de) 2007-05-16

Family

ID=34972045

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112005001384T Withdrawn DE112005001384T5 (de) 2004-06-18 2005-04-29 II-VI/III-V-Schichtenaufbau auf InP-Träger

Country Status (8)

Country Link
US (1) US7126160B2 (de)
JP (1) JP2008503090A (de)
KR (1) KR101227293B1 (de)
CN (1) CN100479279C (de)
DE (1) DE112005001384T5 (de)
GB (1) GB2430552B (de)
TW (1) TW200618429A (de)
WO (1) WO2006007032A1 (de)

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US7402831B2 (en) * 2004-12-09 2008-07-22 3M Innovative Properties Company Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission
US7745814B2 (en) * 2004-12-09 2010-06-29 3M Innovative Properties Company Polychromatic LED's and related semiconductor devices
JP2006245341A (ja) * 2005-03-03 2006-09-14 Mitsubishi Electric Corp 半導体光素子
DE102006010727B4 (de) * 2005-12-05 2019-10-24 Osram Opto Semiconductors Gmbh Oberflächenemittierendes Halbleiterbauelement mit einem Tunnelübergang
KR100794673B1 (ko) 2005-12-06 2008-01-14 한국전자통신연구원 수직 공진 표면 발광 레이저 다이오드의 ｄｂｒ 구조물 및그 제조방법과 수직 공진 표면 발광 레이저 다이오드
US20080067370A1 (en) * 2006-07-01 2008-03-20 Mccaffrey John Patrick Electron microscope and scanning probe microscope calibration device
CN100492670C (zh) * 2007-06-08 2009-05-27 中国科学院上海微系统与信息技术研究所 波长扩展InGaAs探测器及阵列宽带缓冲层和窗口层及制作方法
MX2010003226A (es) * 2007-09-25 2010-04-07 First Solar Inc Dispositivos fotovoltaicos que incluyen heterouniones.
CN101614843B (zh) * 2008-06-25 2010-12-08 中国科学院半导体研究所 倏逝波耦合型单一载流子行波光电探测器的制作方法
EP2211431A1 (de) * 2009-01-22 2010-07-28 Universität Bremen Bragg-Spiegel mit Übergitter zur Kompensation einer Gitterfehlanpassung
US8994071B2 (en) 2009-05-05 2015-03-31 3M Innovative Properties Company Semiconductor devices grown on indium-containing substrates utilizing indium depletion mechanisms
WO2010129412A1 (en) 2009-05-05 2010-11-11 3M Innovative Properties Company Re-emitting semiconductor construction with enhanced extraction efficiency
EP2427924A1 (de) 2009-05-05 2012-03-14 3M Innovative Properties Company Reemittierende halbleiterträgeranordnungen zur verwendung mit leds und herstellungsverfahren
EP2449856A1 (de) 2009-06-30 2012-05-09 3M Innovative Properties Company Elektrolumineszente weisslichtelemente mit einstellbarer farbtemperatur
CN102473817A (zh) 2009-06-30 2012-05-23 3M创新有限公司 无镉再发光半导体构造
WO2011008474A1 (en) 2009-06-30 2011-01-20 3M Innovative Properties Company Electroluminescent devices with color adjustment based on current crowding
SE534345C2 (sv) * 2009-09-24 2011-07-19 Svedice Ab Fotodiod av typen lavinfotodiod.
CN101811659B (zh) * 2010-03-19 2013-08-28 中国科学院上海微系统与信息技术研究所 基于数字合金的非矩形量子结构及其实现方法
WO2012161067A1 (ja) * 2011-05-20 2012-11-29 株式会社堀場製作所 測定ユニットおよびガス分析装置
CN102322949A (zh) * 2011-07-28 2012-01-18 中国科学院西安光学精密机械研究所 一种超高时间分辨固态全光探测器
CN102544180A (zh) * 2012-02-08 2012-07-04 南京大学 一种硫系太阳能电池及其制作方法
US9637999B2 (en) 2014-03-18 2017-05-02 Baker Hughes Incorporated Isolation packer with automatically closing alternate path passages
US10060198B2 (en) 2014-03-18 2018-08-28 Baker Hughes, A Ge Company, Llc Isolation packer with automatically closing alternate path passages
CN111354842A (zh) * 2018-12-24 2020-06-30 晶元光电股份有限公司 半导体元件
US11585970B2 (en) * 2019-10-04 2023-02-21 Teledyne Scientific & Imaging, Llc Low loss single crystal multilayer optical component and method of making same
RU196935U1 (ru) * 2019-10-09 2020-03-23 федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский ядерный университет "МИФИ" (НИЯУ МИФИ) КАЛИБРОВОЧНАЯ ДВУХПЕРИОДНАЯ СВЕРХРЕШЕТКА InAlAs/InGaAs НА ПОДЛОЖКЕ InP
KR102300920B1 (ko) * 2020-11-09 2021-09-13 한국과학기술원 InP 기판을 이용한 소자 제조 방법

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JPH05343796A (ja) * 1992-06-08 1993-12-24 Nec Corp 面出射形半導体レーザ
FR2699337B1 (fr) * 1992-12-15 1995-06-09 Deveaud Pledran Benoit Laser a cavite verticale de faible resistivite.
JPH07249835A (ja) 1994-03-11 1995-09-26 Hitachi Ltd 半導体光素子
US5956362A (en) * 1996-02-27 1999-09-21 Matsushita Electric Industrial Co., Ltd. Semiconductor light emitting device and method of etching
JPH1083149A (ja) * 1996-06-18 1998-03-31 Sony Corp 自発光表示装置
US5732103A (en) * 1996-12-09 1998-03-24 Motorola, Inc. Long wavelength VCSEL
KR100237188B1 (ko) * 1997-02-10 2000-02-01 정선종 튜너블 레이저 제조 방법
JPH11135833A (ja) * 1997-10-30 1999-05-21 New Japan Radio Co Ltd 光半導体装置
JPH11145555A (ja) * 1997-11-12 1999-05-28 Oki Electric Ind Co Ltd 面発光レーザ用ミラー構造およびその形成方法
JP3334598B2 (ja) * 1998-03-25 2002-10-15 日本電気株式会社 ＩｎＰ基板上ＩＩ−ＶＩ族化合物半導体薄膜
JP2938445B1 (ja) 1998-09-07 1999-08-23 株式会社日立製作所 量子井戸光変調器とそれを用いた光通信用モジュールおよび光通信システム
JP3358556B2 (ja) * 1998-09-09 2002-12-24 日本電気株式会社 半導体装置及びその製造方法
US20020158265A1 (en) 2001-04-26 2002-10-31 Motorola, Inc. Structure and method for fabricating high contrast reflective mirrors
US6873638B2 (en) * 2001-06-29 2005-03-29 3M Innovative Properties Company Laser diode chip with waveguide
JP2003124508A (ja) 2001-10-15 2003-04-25 Sharp Corp 発光ダイオード、デバイス、該デバイスを用いた表示または通信用光源装置

Also Published As

Publication number Publication date
GB0623093D0 (en) 2006-12-27
JP2008503090A (ja) 2008-01-31
TW200618429A (en) 2006-06-01
US7126160B2 (en) 2006-10-24
KR20070034496A (ko) 2007-03-28
CN1965452A (zh) 2007-05-16
GB2430552A (en) 2007-03-28
US20050280013A1 (en) 2005-12-22
WO2006007032A1 (en) 2006-01-19
CN100479279C (zh) 2009-04-15
KR101227293B1 (ko) 2013-01-29
GB2430552B (en) 2009-05-20

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Legal Events

Date Code Title Description
R012 Request for examination validly filed

Effective date: 20111207

R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee