DE19616373A1 - Forming galvanically deposited contact bumps for integrated circuits - Google Patents

Forming galvanically deposited contact bumps for integrated circuits

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Publication number
DE19616373A1
DE19616373A1 DE19616373A DE19616373A DE19616373A1 DE 19616373 A1 DE19616373 A1 DE 19616373A1 DE 19616373 A DE19616373 A DE 19616373A DE 19616373 A DE19616373 A DE 19616373A DE 19616373 A1 DE19616373 A1 DE 19616373A1
Authority
DE
Germany
Prior art keywords
metallization
mentioned
metal
bumps
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19616373A
Other languages
German (de)
Inventor
Rolf Aschenbrenner
Andreas Ostmann
Elke Zakel
Paul Kasulke
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pac Tech Packaging Technologies GmbH
Original Assignee
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV filed Critical Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Priority to DE19616373A priority Critical patent/DE19616373A1/en
Priority to DE19704659A priority patent/DE19704659A1/en
Publication of DE19616373A1 publication Critical patent/DE19616373A1/en
Withdrawn legal-status Critical Current

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Abstract

The contact bumps are intended for the bottom of integrated circuits, the metal deposition is formed on a metallising subsequently located under the contact bump, using external current-free process. Preferably an Ni or Au deposition is carried out on the metal bond pad, typically of Al, as an under-bump metallising, prior to depositing a thin plating base (5) in an external current-free process, the metal of the plating base is to be so selected that there is no permanent diffusion between under-metallising and metal contact bumps.

Description

Die vorliegende Erfindung betrifft ein Verfahren zur Erzeugung von Kontakthöckern auf integrierten Schaltkreisen. Die Problemstellung ist es dabei, den für die Herstellung der Kontakthöckern im Stand der Technik benötigten (aufwendigen) Sputterprozeß zu vermeiden.The present invention relates to a production method of bumps on integrated circuits. The The problem is that for the production of the Contact bumps required in the prior art (complex) Avoid sputtering.

Technisches GebietTechnical field

Bei der Flip Chip - oder Tape Automated Bonding (TAB) - Technik handelt es sich um Kontaktierungsverfahren, bei denen der Chip über Kontakthöcker (Bumps) mit einer Leiterbahnstruktur auf (Halbleiter-)Substraten verbunden wird. Diese Verfahren ermöglichen hohe Anschlußzahlen auf kleinstem Raum, geringere Induktivitäten im Vergleich zu Draht-Bondverbindungen und eine verbesserte Wärmeabfuhr. Als Bumps für die Flip Chip und TAB Technik werden derzeit im wesentlichen Lotbumps oder Goldbumps eingesetzt. Diese Prozesse erfordern ganze Wafer sowie den Einsatz von Dünnfilmtechnologien (Sputtern, Photo­ resist-Strukturierung) in Kombination mit galvanischen Metallabscheideverfahren.With flip chip or tape automated bonding (TAB) technology are contacting methods in which the chip via contact bumps with a conductor track structure (Semiconductor) substrates is connected. This procedure enable high number of connections in the smallest space, less Inductors compared to wire bond connections and a improved heat dissipation. As bumps for the flip chip and TAB Technology is currently essentially solder bumps or gold bumps used. These processes require entire wafers as well Use of thin film technologies (sputtering, photo resist structuring) in combination with galvanic Metal deposition process.

Für die galvanische Abformung von Kontakthöckern im Photolack werden Wafer mit Aluminium-Bondpads und Passivierungsschicht verwendet. Die Passivierungsschicht überdeckt den gesamten Wafer - wodurch ein ausreichender Schutz der aktiven Elemente erreicht wird - nur die Aluminium-Bondpads sind ausgespart und an den Rändern durch die Passivierung überlappt. Die Bumps dürfen nicht direkt auf den Aluminium-Kontaktpads abgeschieden werden, da sich an den Grenzflächen zum Aluminium intermetallische Verbindungen ausbilden. Daher wird nach einem Sputterätzprozeß eine Haft- und Diffusionssperrschicht (z. B. TiW) aufgesputtert. Als Basis für die galvanisch abzuscheidenden Gold- oder Lotbumps wird eine zweite dünne Schicht aus Gold oder Kupfer aufgesputtert. Dieses Schichtsystem wird auch als Unterbumpmetallisierung bezeichnet. Zur Erzeugung der Bumps wird eine Galvanikmaske aus Photolack benötigt. Zur Erzielung einer hohen Kontaktdichte kann durch einen dicken Photolack das horizontale Wachstum begrenzt werden. Die galvanische Abformung der Bumps erfolgt in einem entsprechenden Metallbad.For the galvanic impression of bumps in the photoresist become wafers with aluminum bond pads and passivation layer used. The passivation layer covers the entire wafer - as a result adequate protection of the active elements is achieved is - only the aluminum bond pads are cut out and attached to the Passivation overlaps edges. The bumps are not allowed deposited directly on the aluminum contact pads, because themselves at the interfaces to aluminum intermetallic Form connections. Therefore, after a sputter etching process an adhesion and diffusion barrier layer (e.g. TiW) sputtered on. As the basis for the electro-depositable gold or solder bumps becomes a second thin layer of gold or copper sputtered on. This layer system is also called Underbump metallization called. To create the bumps an electroplating mask made of photoresist is required. To achieve a  high contact density can be caused by a thick photoresist limit horizontal growth. The galvanic impression the bumps are carried out in an appropriate metal bath.

Die vorliegende Erfindung betrifft ein Verfahren zum Aufbringen einer metallischen Unterbumpmetallisierung und Platingbase für galvanische abformbare Kontakthöcker mittels einer außenstromlosen Metallabscheidung. Dadurch ist es möglich, auf den aufwendigen Sputterprozeß zu verzichten und die Kosten für das "Bumping" zu reduzieren. Außenstromlose Metallabschei­ de-Verfahren sind kostengünstiger und erreichen dennoch eine vergleichbare Qualität der Kontakthöcker, ohne ein unerwünschtes Diffundieren im Bereich Dump/Basis in Kauf nehmen zu müssen.The present invention relates to a method of application a metallic subbump metallization and platinum base for galvanic moldable contact bumps by means of a electroless metal deposition. This makes it possible to to dispense with the complex sputtering process and the costs for reduce bumping. Electroless metal separator de processes are cheaper and still achieve one comparable quality of contact bumps without an unwanted Diffuse in the dump / base area.

Von solchen Schichtsystemen mit Unterbumpmetallisierung und Platingbase werden im Idealfall folgende Eigenschaften erreicht:Of such layer systems with underbump metallization and Ideally, the following properties are achieved in the platinum base:

  • - Die Diffusion von dem Gold oder dem Lot durch die Unterbumpmetallisierung zum Aluminium und umgekehrt ist nicht möglich.- The diffusion of gold or solder through the Sub-bump metallization to aluminum and vice versa not possible.
  • - Die Leitfähigkeit der Platingbase ist hoch und die Kontaktwiderstände zu den Nachbarschichten sind klein.- The conductivity of the platinum base is high and the Contact resistances to the neighboring layers are small.
  • - Die mechanischen Forderungen, wie gute Haftfestigkeit und Widerstandsfestigkeit gegenüber mechanischen und thermischen Spannungen, werden erfüllt.- The mechanical requirements, such as good adhesive strength and Resistance to mechanical and thermal Tensions are met.
  • - Die thermische Leitfähigkeit ist hoch.- The thermal conductivity is high.
  • - Die Dicke und Struktur der Schicht sind über die gesamte Waferfläche gleichmäßig.- The thickness and structure of the layer are all over Wafer area even.

Die Erfindung(en) werden nachfolgend anhand zweier Ausführungsbeispiele erläutert und ergänzt.The invention (s) are based on two Exemplary embodiments explained and supplemented.

Fig. 1a bis 1e ein erster Prozeßablauf A in schematischen Bildern. FIG. 1a to 1e, a first process flow A in schematic images.

Fig. 2a bis 2f ein zweiter Prozeßablauf B in schematischen Bildern. Fig. 2a to 2f, a second process flow B in the schematic images.

In den Figuren ist ein Aluminium-Bondpad 1 auf ein Substrat 3 aufgebracht. Eine Passivierung 2 wird auf die Randbereiche der Aluminium-Basis 1 aufgetragen, sie wölbt sich dort leicht auf.In the figures, an aluminum bond pad 1 is applied to a substrate 3 . A passivation 2 is applied to the edge areas of the aluminum base 1 , it bulges slightly there.

Auf die Aluminiumbasis 1 wird eine etwa in ihrer Dicke vergleichbare Metallisierung, vorzugsweise aus Nickel, aufgebracht, so daß eine leitende Verbindung zwischen Basis 1 und Metallisierung 4 vorhanden ist. Die Höhe der Metallisierung 4 ist so gewählt, daß sie in etwa auf Höhe der Randwölbung 2a der Passivierungsschicht 2 gelangt oder spürbar bis deutlich darüber liegt (vgl. Fig. 1b und Fig. 2b). Auf die Metallisierung 4 wird eine leitfähige Schicht (Plating-Base) 5 abgeschieden, die dünn gegenüber der Metallisierung 4 oder dem Aluminium-Bondpad 1 ist. Auf diese Plating-Base 5 wird im Bereich der Metallisierung und des Bondpads 4, 1 ein deutlich höherer Metallhöcker 7 aufgesetzt, der den Kontakthöcker (Bump) bildet. Das Aufsetzen erfolgt mittels einer Gal­ vanik-Abscheidung, gesteuert durch Öffnungen eines umliegenden sehr dick ausgebildeten Photolacks 6. In seine Fenster 6a wird aus einem Galvanikbad der Metallhöcker 7 abgeschieden.Is applied to the aluminum base 1 about a comparable in thickness metallization, preferably nickel, is applied, so that a conductive connection between the base 1 and the metallization 4 is provided. The height of the metallization 4 is selected so that it approximately at the height of the edge 2 a curvature of the passivation layer 2 passes or perceptible to significantly higher located (see. Fig. 1b and Fig. 2b). A conductive layer (plating base) 5 is deposited on the metallization 4, the thin compared to the metallization 4 or the aluminum bonding pad 1. In the area of the metallization and the bond pad 4 , 1, a significantly higher metal bump 7 , which forms the bump, is placed on this plating base 5 . The attachment is carried out by means of a galvanic deposition, controlled by openings in a surrounding, very thick photoresist 6 . In its window 6 a, the metal bump 7 is deposited from an electroplating bath.

Nach Entfernen des Photolacks 6 bleibt deutlich erhaben der Metallhöcker 7 auf dem Substrat 3, über einer Plating-Base 5, der Metallisierung 4 und dem Aluminium-Bondpand 1.After removal of the photoresist 6 , the metal bump 7 remains clearly raised on the substrate 3 , over a plating base 5 , the metallization 4 and the aluminum bond tape 1 .

Die Plating-Base 5 kann außerhalb des Metallhöckers 7 entfernt werden, z. B. durch Ätzen. The plating base 5 can be removed outside the metal bump 7 , e.g. B. by etching.

Die nachfolgend umschriebenen zwei Verfahren unterscheiden sich insbesondere durch die Fig. 1c und 2c, bei denen einmal (Prozeß A) keine katalytische Polymerschicht 8 aufgetragen wird, sondern die Plating-Base 5 direkt auf die Passivierung 2 und die Metallisierung 4 und bei den zum zweiten (Prozeß B) auf die Metallisierung 4 erst eine Polymerschicht 8 aufgetragen wird, die großflächig abgetragen wird, um eine ebene Oberfläche zu bilden, bestehend aus metallischem Bereich 4a und Polymerbereich 8a.The two processes described below differ in particular from FIGS. 1c and 2c, in which one (process A) no catalytic polymer layer 8 is applied, but the plating base 5 directly on the passivation 2 and the metallization 4 and in the second (Process B) first a polymer layer 8 is applied to the metallization 4 , which is removed over a large area in order to form a flat surface consisting of the metallic region 4 a and the polymer region 8 a.

Prozeßablauf A (Fig. 1)Process flow A ( Fig. 1)

  • 1) Außenstromlose Nickel- oder Goldabscheidung 4 auf den Aluminium Bondpads 1 als Unterbump-Metallisierung (Nickeldicke ca. 0,5-10 µm, Immersionsgold ca. 0,2 µm). Die Höhe der Abscheidung 4 beträgt etwa die der Wölbung 2a der Passivierung 2.1) Electroless nickel or gold deposition 4 on the aluminum bond pads 1 as underbump metallization (nickel thickness approx. 0.5-10 µm, immersion gold approx. 0.2 µm). The height of the deposition 4 is approximately that of the curvature 2 a of the passivation 2 .
  • 2) Außenstromlose Metallabscheidung einer Platingbase 5, durch Aktivieren der Passivierung 2 (stromlos Gold oder stromlos Nickel oder stromlos Kupfer oder stromlos Palladium)2) Electroless metal deposition of a platinum base 5 , by activating the passivation 2 (electroless gold or electroless nickel or electroless copper or electroless palladium)
  • 3) Aufbringen des Photolackes 6 (Dicke h₆ entsprechend der gewünschten Bumpform und Bumphöhe h₇)3) Applying the photoresist 6 (thickness h₆ corresponding to the desired bump shape and bump height h₇)
  • 4) Öffnen 6a des Photolackes 6.4) Open 6 a of the photoresist 6 .
  • 5) Galvanische Metallabscheidung (Pb, Sn, Au, In, . . .) zur Bildung eines Kontakthöckers 7.5) Galvanic metal deposition (Pb, Sn, Au, In,...) To form a bump 7 .
  • 6) Photolack 6 strippen.6) Strip photoresist 6 .
  • 7) Platingbase 5 außen ätzen.7) Etch the platinum base 5 on the outside.
Prozeßablauf B (Fig. 2)Process flow B ( Fig. 2)

  • 1) Außenstromlose Nickel- oder Goldabscheidung 4 auf den Aluminium Bondpads 1 als Unterbumpmetallisierung (Nickeldicke ca. 0,5 bis 10 µm, Immersionsgold ca. 0,2 µm) leicht übergreifend die Passivierung 2, die um die Bondpads 1 gelegen ist.1) Electroless nickel or gold deposition 4 on the aluminum bond pads 1 as sub-bump metallization (nickel thickness approx. 0.5 to 10 μm, immersion gold approx. 0.2 μm) slightly overlapping the passivation 2 , which is located around the bond pads 1 .
  • 2) Aufbringen einer photostrukturierbaren Polymerschicht 8 (z. B. Photolack):2) Application of a photostructurable polymer layer 8 (e.g. photoresist):
  • a) mit katalytischer Wirkung;a) with catalytic action;
  • b) Nachträgliche Aktivierung (z. B. Palladiumaktivator).b) Subsequent activation (e.g. palladium activator).
  • 3) Öffnen der Polymerschicht 8 über der Unterbumpmetallisierung 4 zur Freilegung 4a der Metallisierung oder Abtragen eines Flächenbereiches um eine ebene Oberfläche von Metallisierung 4a und Polymerschicht 8a zu erhalten.3) Opening the polymer layer 8 over the bottom bump metallization 4 to expose 4 a of the metallization or removal of a surface area in order to obtain a flat surface of the metallization 4 a and the polymer layer 8 a.
  • 4) Außenstromlose Metallabscheidung einer Platingbase 5 (stromlos Gold, oder stromlos Nickel, oder stromlos Kupfer, oder stromlos Palladium) die dünn ist gegenüber der Metallisierung 4.4) Electroless metal deposition of a platinum base 5 (electroless gold, or electroless nickel, or electroless copper, or electroless palladium) which is thin compared to the metallization 4 .
  • 5) Aufbringen eines dicken Photolackes 6 (Dicke h₆ entsprechend der gewünschten Bumpform und Bumphöhe h₇).5) Apply a thick photoresist 6 (thickness h₆ corresponding to the desired bump shape and bump height h₇).
  • 6) Öffnen des Photolackes 6 in einem Fenster 6a oberhalb des Aluminium-Bonpads 1.6) Open the photoresist 6 in a window 6 a above the aluminum bon pad 1 .
  • 7) Galvanische Metallabscheidung (Pb, Sn, Au, In, . . .) zur Bildung des Galvanik-Metallbumpes 7 im Fenster 6a.7) Galvanic metal deposition (Pb, Sn, Au, In,...) To form the galvanic metal bump 7 in the window 6 a.
  • 8) Photolack 6 strippen, außerhalb des Galvanit-Metallbumps 7.8) Strip photoresist 6 , outside the galvanite metal bump 7 .
  • 9) Platingbase 5 ätzen, außerhalb des Galvanit-Metallbumps 7 9) Etch the plating base 5 , outside the galvanite metal bump 7
  • 10) Polymerschicht 8 strippen.10) Strip polymer layer 8 .

Claims (13)

1. Verfahren zur Erzeugung von galvanisch abgeschiedenen Kontakthöckern (7) für das Bonden integrierter Schaltkreise, gekennzeichnet durch eine außenstromlose Metallabscheidung (5) auf einer (später) unter dem Kontakthöcker (7) liegende Metallisierung (1, 4).1. A method for producing galvanically deposited bumps ( 7 ) for bonding integrated circuits, characterized by a metal deposition ( 5 ) without external current on a (later) metallization ( 1 , 4 ) located below the bump ( 7 ). 2. Verfahren nach Anspruch 1, bei dem eine Nickel- oder Goldabscheidung auf das Metall-, insbesondere Alumi­ nium-Bondpad (1) als Unterbump-Metallisierung (4) aufgebracht wird, bevor die Plating-Base (5) dünn und außenstromlos aufgetragen wird.2. The method according to claim 1, in which a nickel or gold deposition on the metal, in particular aluminum bond pad ( 1 ) is applied as sub-bump metallization ( 4 ) before the plating base ( 5 ) is applied thinly and without external current . 3. Verfahren nach einem der erwähnten Ansprüche, bei dem die Plating-Base (5) metallisch so gewählt ist, daß dauerhaft keine wesentliche Diffusion zwischen Unter-Metallisierung (4, 1) und Galvanik-Metallhöcker (7) entsteht.3. The method according to any one of the claims mentioned, in which the plating base ( 5 ) is chosen metallic so that there is no permanent significant diffusion between the under-metallization ( 4 , 1 ) and electroplated metal bumps ( 7 ). 4. Verfahren nach einem der erwähnten Ansprüche, bei dem die Leitfähigkeit der Plating-Schicht oder -Lage (5) hoch gewählt wird.4. The method according to any one of the claims mentioned, in which the conductivity of the plating layer or layer ( 5 ) is chosen to be high. 5. Verfahren nach einem der erwähnten Ansprüche, bei dem die Dicke und Struktur der Schicht (5) über die Substratfläche (3) im wesentlichen gleichmäßig ist.5. The method according to any one of the claims mentioned, wherein the thickness and structure of the layer ( 5 ) over the substrate surface ( 3 ) is substantially uniform. 6. Verfahren nach einem der erwähnten Ansprüche, bei dem die Unterbump-Metallisierung (4) (auch) außenstromlos abgeschieden wird.6. The method according to any one of the claims mentioned, in which the lower bump metallization ( 4 ) (also) is deposited without external current. 7. Verfahren nach einem der erwähnten Ansprüche, bei dem die Passivierung (2) außerhalb der Metallisierung (1, 4) vor Aufbringen der Plating-Base (5) aktiviert wird. 7. The method according to any one of the claims mentioned, wherein the passivation ( 2 ) outside the metallization ( 1 , 4 ) is activated before applying the plating base ( 5 ). 8. Verfahren nach einem der erwähnten Ansprüche, bei dem die Plating-Base außerhalb der Metallhöcker (7) nach Entfernen des Abform-Photolacks (6) (auch) entfernt wird.8. The method according to any one of the mentioned claims, wherein the plating base outside the metal bumps ( 7 ) after removal of the impression photoresist ( 6 ) (also) is removed. 9. Verfahren nach einem der erwähnten Ansprüche, bei dem vor Aufbringen der Plating-Base (5) eine photostrukturierbare Polymerschicht (8, 8a) auf die Passivierung (2) und die Metallisierung (1, 4) aufgebracht wird und so abgetragen wird, daß zumindest die Metallisierung (1, 4) freiliegt, insbesondere eine im wesentlichen plane Oberfläche (4a, 8a) aus Metallisierung (4) und Passivierung (8) gebildet wird, um die Plating-Schicht (5) über die gesamte Oberfläche des Substrats (3) so gleichmäßig wie möglich auftragen zu können.9. The method according to claim 1, in which a photostructurable polymer layer ( 8 , 8 a) is applied to the passivation ( 2 ) and the metallization ( 1 , 4 ) before the plating base ( 5 ) is applied and is thus removed, that at least the metallization ( 1 , 4 ) is exposed, in particular a substantially planar surface ( 4 a, 8 a) of metallization ( 4 ) and passivation ( 8 ) is formed to the plating layer ( 5 ) over the entire surface of the To be able to apply substrate ( 3 ) as evenly as possible. 10. Verfahren nach einem der erwähnten Ansprüche, bei dem der Photolack (6) in seiner Höhe (h₆) höher gewählt wird, als die gewünschte Höhe (h₇) der Metallhöcker (7).10. The method according to any one of the mentioned claims, in which the photoresist ( 6 ) is chosen to be higher in height (h höher) than the desired height (h₇) of the metal bumps ( 7 ). 11. Einer oder mehrere galvanisch abgeschiedene Metallhöcker (7) mit metallischer Diffusions-Sperrschicht (5), erhältlich nach einem der erwähnten Verfahrensansprüche.11. One or more electrodeposited metal bumps ( 7 ) with a metallic diffusion barrier layer ( 5 ), obtainable according to one of the mentioned method claims. 12. Verfahren zur Erzeugung von galvanisch abgeschiedenen Kontakthöckern (7) für das Bonden integrierter Schaltkreise, gekennzeichnet durch zwei aufeinanderfolgende stromlose Metallabscheidungen (5, 4) auf eine Metallisierung (1), wobei die erste Abscheidung (4) stärker ist, als die zweite und die zweite Abscheidung (5) großflächig gleichmäßiger, als die erste Abscheidung ist.12. A method for producing galvanically deposited bumps ( 7 ) for bonding integrated circuits, characterized by two successive electroless metal deposits ( 5 , 4 ) on a metallization ( 1 ), the first deposit ( 4 ) being stronger than the second and the second deposition ( 5 ) is more uniform over a large area than the first deposition. 13. Einer oder mehrere galvanisch abgeschiedene Metallhöcker (7) mit metallischer Diffusions-Sperrschicht (5), erhältlich nach Verfahrensanspruch 12.13. One or more galvanically deposited metal bumps ( 7 ) with a metallic diffusion barrier layer ( 5 ), obtainable according to method claim 12.
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