DE19719700A1 - Blind hole production in circuit board - Google Patents

Blind hole production in circuit board

Info

Publication number
DE19719700A1
DE19719700A1 DE19719700A DE19719700A DE19719700A1 DE 19719700 A1 DE19719700 A1 DE 19719700A1 DE 19719700 A DE19719700 A DE 19719700A DE 19719700 A DE19719700 A DE 19719700A DE 19719700 A1 DE19719700 A1 DE 19719700A1
Authority
DE
Germany
Prior art keywords
copper
laser
hole
circuit board
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19719700A
Other languages
German (de)
Inventor
Eddy Dr Roelants
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE19719700A priority Critical patent/DE19719700A1/en
Publication of DE19719700A1 publication Critical patent/DE19719700A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0017—Etching of the substrate by chemical or physical means
    • H05K3/0026—Etching of the substrate by chemical or physical means by laser ablation
    • H05K3/0032—Etching of the substrate by chemical or physical means by laser ablation of organic insulating material
    • H05K3/0038—Etching of the substrate by chemical or physical means by laser ablation of organic insulating material combined with laser drilling through a metal layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B23K26/382—Removing material by boring or cutting by boring
    • B23K26/389—Removing material by boring or cutting by boring of fluid openings, e.g. nozzles, jets
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0017—Etching of the substrate by chemical or physical means
    • H05K3/0026—Etching of the substrate by chemical or physical means by laser ablation
    • H05K3/0032—Etching of the substrate by chemical or physical means by laser ablation of organic insulating material
    • H05K3/0035—Etching of the substrate by chemical or physical means by laser ablation of organic insulating material of blind holes, i.e. having a metal layer at the bottom
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/16—Composite materials, e.g. fibre reinforced
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/0332—Structure of the conductor
    • H05K2201/0388—Other aspects of conductors
    • H05K2201/0394—Conductor crossing over a hole in the substrate or a gap between two separate substrate parts
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
    • H05K2203/0779—Treatments involving liquids, e.g. plating, rinsing characterised by the specific liquids involved
    • H05K2203/0786—Using an aqueous solution, e.g. for cleaning or during drilling of holes
    • H05K2203/0796—Oxidant in aqueous solution, e.g. permanganate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
    • H05K2203/107—Using laser light
    • H05K2203/108—Using a plurality of lasers or laser light with a plurality of wavelengths
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0055—After-treatment, e.g. cleaning or desmearing of holes

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)

Abstract

A method of producing blind holes in a circuit board (1), to allow contacting of two copper layers (2, 3) through an interposed glass-reinforced dielectric layer (4), involves (a) drilling a hole (6) through a first copper layer (2) using a laser at a wavelength (preferably 266-1064 nm) suitable for copper removal; (b) extending the hole (6) down to the second copper layer (3) using a second laser at a wavelength (preferably 1064-10600 nm) at which copper reflects the laser radiation; and (c) chemically removing dielectric residues (9) from the second copper layer (3), preferably using a permanganate solution optionally assisted by mechanical brushing. Preferably, the blind hole is subsequently etched with a sodium persulphate solution.

Description

Um Durchkontaktierungen bei Leiterplatten mit mindestens zwei, jeweils durch eine Dielektrikum-Schicht voneinander getrennten Kupferschichten zu ermöglichen, ist es bekannt, durch mechanisches Bohren oder mit Hilfe von Lasern Sack­ löcher in die Leiterplatte einzubringen, die durch eine der beiden Kupferschichten und die darunterliegende Dielektrikum-Schicht bis zu der zweiten Kupferschicht reichen. Bei einer anschließenden Verkupferung kommt es im Bereich der Sack­ löcher zu der gewünschten Durchkontaktierung zwischen den beiden Kupferschichten.To make vias on circuit boards with at least two, each one through a dielectric layer to enable separate copper layers, it is known by mechanical drilling or with the help of laser sack holes in the circuit board through one of the two layers of copper and the one below Dielectric layer extend to the second copper layer. At a subsequent copper plating occurs in the area of the sack holes for the desired via connection between the two copper layers.

Beim mechanischen Tiefenbohren können Lochdurchmesser kleiner als ca. 150 µm nicht erzielt werden.With mechanical deep drilling, hole diameters can be smaller than approx. 150 µm cannot be achieved.

Beim Einbringen von Sacklöchern mittels Laser entsteht das Problem, daß nach dem Durchbohren der einen Kupferschicht und der darunterliegenden Dielektrikum-Schicht auch die zweite Kupferschicht zumindest partiell abgetragen wird.This occurs when a blind hole is made using a laser Problem that after drilling a copper layer and the underlying dielectric layer also the second Copper layer is at least partially removed.

Der Erfindung liegt die Aufgabe zugrunde, mit möglichst ge­ ringem technischen Aufwand eine hochgenaue Herstellung von Sacklöchern in einer Leiterplatte zum Zwecke einer nach­ folgenden elektrischen Durchkontaktierung zu ermöglichen. The invention is based, with as possible ge low technical effort a highly precise production of Blind holes in a circuit board for the purpose of a to enable the following electrical plated-through holes.  

Gemäß der Erfindung wird die Aufgabe durch das in Anspruch 1 angegebene Verfahren gelöst.According to the invention, the object is achieved in that in claim 1 specified procedures solved.

Vorteilhafte Weiterbildungen des erfindungsgemäßen Verfahrens sind den Unteransprüchen zu entnehmen.Advantageous further developments of the method according to the invention can be found in the subclaims.

Mittels des ersten Lasers, z. B. ein Nd:YAG-Laser, dessen Wellenlänge vorzugsweise im Bereich von etwa 266 nm bis 1064 nm liegt, wird also ein Loch in die erste Kupferschicht der Leiterplatte eingebracht, das bis in die Dielektrikum-Schicht reicht. Mittels eines zweiten Lasers, beispielsweise ebenfalls ein Nd:YAG- oder ein CO2-Laser, mit einer Wellen­ länge vorzugsweise im Bereich von etwa 1064 nm bis 10600 nm wird das Loch bis zu der zweiten Kupferschicht vertieft, wobei diese jedoch nicht beschädigt wird, weil die Laser­ strahlung des zweiten Lasers aufgrund seiner Wellenlänge von dem Kupfer reflektiert wird. Da verbleibende Reste des Dielektrikums auf der zweiten Kupferschicht bei einer an­ schließenden Verkupferung zu fehlerhaften Durchkontaktie­ rungen führen können, werden die Reste des Dielektrikums zuvor chemisch, vorzugsweise mittels einer Permanganat-Lösung, mit oder ohne mechanischem Bürsten entfernt. Durch anschließendes Anätzen der Leiterplatte mittels einer Natriumpersulfat-Lösung wird in vorteilhafter Weise eine bessere Haftung des Kupfers bei der nachfolgenden Verkupfe­ rung erreicht.By means of the first laser, e.g. For example, an Nd: YAG laser, the wavelength of which is preferably in the range from approximately 266 nm to 1064 nm, a hole is thus made in the first copper layer of the printed circuit board which extends into the dielectric layer. By means of a second laser, for example likewise an Nd: YAG or a CO 2 laser, with a wavelength preferably in the range from approximately 1064 nm to 10600 nm, the hole is deepened to the second copper layer, but this is not damaged, because the laser radiation of the second laser is reflected by the copper due to its wavelength. Since remaining residues of the dielectric on the second copper layer can lead to faulty plated-through holes in a subsequent copper plating, the residues of the dielectric are previously removed chemically, preferably by means of a permanganate solution, with or without mechanical brushing. By subsequently etching the circuit board using a sodium persulfate solution, better adhesion of the copper in the subsequent coppering is advantageously achieved.

Das erfindungsgemäße Verfahren wird im folgenden beispielhaft anhand der Zeichnung erläutert, die in den The method according to the invention is exemplified below with reference to the drawing, which in the  

Fig. 1 bis 4 einen Querschnitt durch die Leiterplatte in unterschiedlichen Stadien des Verfahrens zeigt. Fig. 1 to 4 shows a cross section through the circuit board in different stages of the process.

Fig. 1 zeigt eine Leiterplatte 1 mit zwei Kupferschichten 2 und 3 und einer dazwischenliegenden Dielektrikum-Schicht 4 im Ausgangszustand vor der Einbringung eines Sackloches zur Er­ möglichung einer Durchkontaktierung zwischen den Kupfer­ schichten 2 und 3. Die Gesamtdicke der gezeigten Schichten­ folge beträgt etwa 50 bis 300 µm. Die Einbringung des Sack­ loches soll von der Seite der Kupferschicht 2 her erfolgen, so daß diese zumindest im Bereich des einzubringenden Sack­ loches freiliegt; an die Kupferschicht 3 können sich nach unten hin weitere Dielektrikum-Schichten und Kupferschichten anschließen. Die Dielektrikum-Schicht 4 besteht aus glas­ gefülltem Material. Fig. 1 shows a circuit board 1 with two copper layers 2 and 3 and an intermediate dielectric layer 4 in the initial state before the introduction of a blind hole to enable a plated-through hole between the copper layers 2 and 3 . The total thickness of the layers shown is approximately 50 to 300 µm. The insertion of the blind hole should take place from the side of the copper layer 2 so that it is exposed at least in the region of the blind hole to be inserted; further dielectric layers and copper layers can adjoin the copper layer 3 at the bottom. The dielectric layer 4 consists of glass-filled material.

Wie Fig. 2 zeigt, wird mittels eines ersten Lasers 5 ein Loch 6 in die erste Kupferschicht 2 eingebracht, das bis in die darunterliegende Dielektrikum-Schicht 4 reicht. Bei dem Laser 5 handelt es sich um einen Nd:YAG-Dauerstrichlaser mit einer zum Abtragen von Kupfer geeigneten Wellenlänge von 355 nm, der im Riesenimpulsbetrieb mit Pulsbreiten zwischen 1 ns und 1 µs betrieben wird.As shown in FIG. 2, a hole 6 is made in the first copper layer 2 by means of a first laser 5 and extends into the dielectric layer 4 underneath. Laser 5 is an Nd: YAG continuous wave laser with a wavelength of 355 nm suitable for removing copper, which is operated in giant pulse mode with pulse widths between 1 ns and 1 μs.

In einem nächsten, in Fig. 3 gezeigten Verfahrensschritt wird das Loch 6 mittels eines zweiten Lasers 7 bis zu der zweiten Kupferschicht 3 hin vertieft. Bei dem zweiten Laser 7 handelt es sich ebenfalls um einen Nd:YAG- oder einen CO2-Laser mit einer im Vergleich zu dem ersten Laser 5 größeren Wellenlänge im Bereich zwischen 1064 nm und 10 600 nm, so daß die Laserstrahlung von Kupfer reflektiert wird. Es besteht daher nicht die Gefahr, daß im Bereich des Lochbodens Mate­ rial der zweiten Kupferschicht 3 bzw. im Bereich des Loch­ randes Material der ersten Kupferschicht 2 durch den Laser 7 abgetragen wird. Der Durchmesser des von dem zweiten Laser 7 erzeugten Laserstrahls 8 ist größer als im Falle des ersten Lasers 5, wobei die erste Kupferschicht 2 mit dem darin ausgebildeten Loch 6 als Blende wirkt und auf diese Weise saubere Lochflanken in der Dielektrikum-Schicht 4 erhalten werden. Wie Erfahrungen zeigen, bleiben nach der Behandlung mit dem zweiten Laser 7 Reste 9 des Dielektrikums auf der zweiten Kupferschicht 3 übrig.In a next process step shown in FIG. 3, the hole 6 is deepened by means of a second laser 7 up to the second copper layer 3 . The second laser 7 is also an Nd: YAG or a CO 2 laser with a longer wavelength in the range between 1064 nm and 10 600 nm than the first laser 5 , so that the laser radiation is reflected by copper . There is therefore no danger that material of the first copper layer 2 will be removed by the laser 7 in the region of the perforated base mate rial of the second copper layer 3 or in the region of the hole. The diameter of the laser beam 8 generated by the second laser 7 is larger than in the case of the first laser 5 , the first copper layer 2 with the hole 6 formed therein acting as an aperture and in this way clean hole flanks in the dielectric layer 4 are obtained. Experience shows that after treatment with the second laser 7, residues 9 of the dielectric remain on the second copper layer 3 .

Diese Reste 9 werden entsprechend der Darstellung in Fig. 4 in einem nachfolgenden Verfahrensschritt mittels einer Permanganat-Lösung unter zusätzlichem mechanischen Bürsten entfernt. Anschließend wird die Leiterplatte 1 im Bereich des hergestellten Sackloches mit einer Natriumpersulfat-Lösung angeätzt, wodurch bei der nachfolgenden Verkupferung eine bessere Haftung des Kupfers an den Sacklochflanken und ins­ besondere der zweiten Kupferschicht 3 erreicht wird.As shown in FIG. 4, these residues 9 are removed in a subsequent process step by means of a permanganate solution with additional mechanical brushing. The circuit board 1 is then etched in the region of the blind hole produced with a sodium persulfate solution, as a result of which the copper is better adhered to the blind hole flanks and in particular the second copper layer 3 in the subsequent coppering.

Claims (6)

1. Verfahren zur Herstellung von Sacklöchern in einer Leiter­ platte (1) zur Ermöglichung einer elektrischen Durchkontak­ tierung zwischen zwei durch eine glasarmierte Dielektrikum-Schicht (4) voneinander getrennten Kupferschichten (2, 3), wobei jeweils
  • - mittels eines ersten Lasers (5) mit einer zum Abtragen von Kupfer geeigneten ersten Wellenlänge ein bis in die Dielek­ trikum-Schicht (4) reichendes Loch (6) in eine der beiden Kupferschichten (2, 3) eingebracht wird,
  • - mittels eines zweiten Lasers (7) mit einer zweiten Wellen­ länge, bei der die Laserstrahlung von Kupfer reflektiert wird, das Loch (6) bis zu der zweiten Kupferschicht (3) vertieft wird und
  • - Reste (9) des Dielektrikums auf der zweiten Kupferschicht (3) chemisch entfernt werden.
1. A method for producing blind holes in a printed circuit board ( 1 ) to enable electrical through-connection between two copper layers ( 2 , 3 ) separated by a glass-reinforced dielectric layer ( 4 ), each of which
  • - By means of a first laser ( 5 ) with a first wavelength suitable for removing copper, a hole ( 6 ) reaching into the dielectric layer ( 4 ) is introduced into one of the two copper layers ( 2 , 3 ),
  • - By means of a second laser ( 7 ) with a second wave length, in which the laser radiation is reflected from copper, the hole ( 6 ) is deepened to the second copper layer ( 3 ) and
  • - Residues ( 9 ) of the dielectric on the second copper layer ( 3 ) are removed chemically.
2. Verfahren nach Anspruch 1, dadurch gekennzeichnet, daß die erste Wellenlänge im Bereich von etwa 266 nm bis 1064 nm liegt.2. The method according to claim 1, characterized in that the first wavelength is in the range of about 266 nm to 1064 nm. 3. Verfahren nach Anspruch 1 oder 2, dadurch gekenn­ zeichnet, daß die zweite Wellenlänge im Bereich von etwa 1064 nm bis 10 600 nm liegt.3. The method according to claim 1 or 2, characterized records that the second wavelength is in the range of about 1064 nm to 10 600 nm. 4. Verfahren nach einem der vorangehenden Ansprüche, da­ durch gekennzeichnet, daß die Reste (9) des Dielektri­ kums mittels einer Permanganat-Lösung entfernt werden. 4. The method according to any one of the preceding claims, characterized in that the residues ( 9 ) of the dielectric are removed by means of a permanganate solution. 5. Verfahren nach Anspruch 4, dadurch gekennzeichnet, daß die chemische Entfernung der Reste (9) des Dielektrikums durch mechanisches Bürsten unterstützt wird.5. The method according to claim 4, characterized in that the chemical removal of the residues ( 9 ) of the dielectric is supported by mechanical brushing. 6. Verfahren nach Anspruch 4 oder 5, dadurch gekenn­ zeichnet, daß die Leiterplatte (1) im Bereich des her­ gestellten Sackloches mittels einer Natriumpersulfat-Lösung angeätzt wird.6. The method according to claim 4 or 5, characterized in that the circuit board ( 1 ) is etched in the region of the blind hole produced by means of a sodium persulfate solution.
DE19719700A 1997-05-09 1997-05-09 Blind hole production in circuit board Withdrawn DE19719700A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE19719700A DE19719700A1 (en) 1997-05-09 1997-05-09 Blind hole production in circuit board

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19719700A DE19719700A1 (en) 1997-05-09 1997-05-09 Blind hole production in circuit board

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Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001019146A1 (en) * 1999-09-06 2001-03-15 Siemens Aktiengesellschaft Method for treating multiple-layer substrates
WO2001026435A1 (en) * 1999-09-30 2001-04-12 Siemens Aktiengesellschaft Method and device for laser drilling laminates
WO2001026436A1 (en) * 1999-09-30 2001-04-12 Siemens Aktiengesellschaft Method and device for laser drilling organic materials
WO2001041969A2 (en) * 1999-12-07 2001-06-14 Electro Scientific Industries, Inc. Switchable wavelength laser-based etched circuit board processing system
WO2001076808A2 (en) * 2000-04-11 2001-10-18 Gsi Lumonics Inc. A method and system for laser drilling
DE10127357C1 (en) * 2001-06-06 2002-09-26 Siemens Dematic Ag Manufacturing system for production of circuit structure on conductive plate uses two lasers with lenses illuminating two separate areas on plate
EP1283662A1 (en) * 2001-01-30 2003-02-12 Matsushita Electric Industrial Co., Ltd. It laminating double-side circuit board and production method therefor and multi-layer printed circuit board using
EP1291118A1 (en) * 2001-09-07 2003-03-12 TRUMPF LASERTECHNIK GmbH Process and device for deepening holes in a multilayer circuit board
US6610960B2 (en) 2001-05-23 2003-08-26 Siemens Aktiengesellschaft Method for drilling micro-holes with a laser beam
DE10219388A1 (en) * 2002-04-30 2003-11-20 Siemens Ag Process for producing a trench structure in a polymer substrate
DE10222500A1 (en) * 2002-05-22 2003-12-18 Bosch Gmbh Robert Laser drilling or welding method has apertured shield plate positioned between workpiece surface and laser beam
US6696665B2 (en) 1999-03-16 2004-02-24 Siemens Aktiengesellschaft Method for introducing plated-through holes into an electrically insulating base material having a metal layer on each side
US6784399B2 (en) 2001-05-09 2004-08-31 Electro Scientific Industries, Inc. Micromachining with high-energy, intra-cavity Q-switched CO2 laser pulses
DE10307309A1 (en) * 2003-02-20 2004-09-09 Siemens Ag Device and method for processing electrical circuit substrates using a laser
CN101594750B (en) * 2008-05-27 2011-01-19 南亚电路板股份有限公司 Structure and manufacturing method of high-density substrate
CN101657071B (en) * 2008-08-21 2011-05-11 欣兴电子股份有限公司 Manufacturing method of blind via structure of substrate
US8237082B2 (en) * 2004-09-02 2012-08-07 Siemens Aktiengesellschaft Method for producing a hole
CN102950386A (en) * 2011-08-16 2013-03-06 悦虎电路(苏州)有限公司 Method for solving problem of pore-top suspending copper after direct pore forming with laser for circuit boards
CN101195193B (en) * 2006-10-06 2013-08-21 索尼株式会社 Laser processing apparatus, laser processing method, substrate, manufacturing method of substrate, manufacturing method of display apparatus
CN111215754A (en) * 2020-02-26 2020-06-02 武汉铱科赛科技有限公司 Method, system, device and equipment for etching non-uniform insulating medium
CN111545921A (en) * 2020-03-31 2020-08-18 东莞泰升玻璃有限公司 Method for manufacturing stepped groove on glass by using laser engraving method
WO2023201860A1 (en) * 2022-04-22 2023-10-26 武汉铱科赛科技有限公司 Blind via drilling method, device, apparatus and system based on selective laser absorption

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4789770A (en) * 1987-07-15 1988-12-06 Westinghouse Electric Corp. Controlled depth laser drilling system
US4839497A (en) * 1987-09-03 1989-06-13 Digital Equipment Corporation Drilling apparatus and method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4789770A (en) * 1987-07-15 1988-12-06 Westinghouse Electric Corp. Controlled depth laser drilling system
US4839497A (en) * 1987-09-03 1989-06-13 Digital Equipment Corporation Drilling apparatus and method

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
HERRMANN,G., u.a.: Handbuch der Leiterplatten- technik, 2.Aufl., 1982, Eugen G. Leuze Verlag, Saulgau, S. 337,338 *
WEINHOLD,Michael, POWELL,David,J,: Empfehlungen zur Herstellung von Sacklöchern mittels Laser- ablation in mit 100% nichtgewebtem Aramid ver- stärkten Leiterplatten und Multilayern. In: Galvanotechnik 87, 1996, Nr. 5, S.1661-1668 *

Cited By (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6696665B2 (en) 1999-03-16 2004-02-24 Siemens Aktiengesellschaft Method for introducing plated-through holes into an electrically insulating base material having a metal layer on each side
WO2001019146A1 (en) * 1999-09-06 2001-03-15 Siemens Aktiengesellschaft Method for treating multiple-layer substrates
KR100752831B1 (en) * 1999-09-30 2007-08-29 히다치 비아 메카닉스 가부시키가이샤 Method and device for laser drilling organic materials
WO2001026436A1 (en) * 1999-09-30 2001-04-12 Siemens Aktiengesellschaft Method and device for laser drilling organic materials
KR100752829B1 (en) * 1999-09-30 2007-08-29 히다치 비아 메카닉스 가부시키가이샤 Method and device for laser drilling laminates
WO2001026435A1 (en) * 1999-09-30 2001-04-12 Siemens Aktiengesellschaft Method and device for laser drilling laminates
US6713719B1 (en) 1999-09-30 2004-03-30 Siemens Aktiengesellschaft Method and device for laser drilling laminates
US6861008B1 (en) 1999-09-30 2005-03-01 Siemens Aktiengesellschaft Method and device for laser drilling organic materials
WO2001041969A2 (en) * 1999-12-07 2001-06-14 Electro Scientific Industries, Inc. Switchable wavelength laser-based etched circuit board processing system
WO2001041969A3 (en) * 1999-12-07 2002-02-07 Electro Scient Ind Inc Switchable wavelength laser-based etched circuit board processing system
WO2001076808A3 (en) * 2000-04-11 2002-02-28 Gsi Lumonics Inc A method and system for laser drilling
US6657159B2 (en) 2000-04-11 2003-12-02 Gsi Lumonics, Inc. Method for laser drilling
WO2001076808A2 (en) * 2000-04-11 2001-10-18 Gsi Lumonics Inc. A method and system for laser drilling
EP1283662A1 (en) * 2001-01-30 2003-02-12 Matsushita Electric Industrial Co., Ltd. It laminating double-side circuit board and production method therefor and multi-layer printed circuit board using
EP1283662A4 (en) * 2001-01-30 2007-01-10 Matsushita Electric Ind Co Ltd It laminating double-side circuit board and production method therefor and multi-layer printed circuit board using
US6784399B2 (en) 2001-05-09 2004-08-31 Electro Scientific Industries, Inc. Micromachining with high-energy, intra-cavity Q-switched CO2 laser pulses
US6610960B2 (en) 2001-05-23 2003-08-26 Siemens Aktiengesellschaft Method for drilling micro-holes with a laser beam
US6783688B2 (en) 2001-06-06 2004-08-31 Siemens Aktiengesellschaft Method and apparatus for structuring printed circuit boards
WO2002100137A1 (en) * 2001-06-06 2002-12-12 Siemens Aktiengesellschaft Method and device for structuring printed circuit boards
DE10127357C1 (en) * 2001-06-06 2002-09-26 Siemens Dematic Ag Manufacturing system for production of circuit structure on conductive plate uses two lasers with lenses illuminating two separate areas on plate
EP1291118A1 (en) * 2001-09-07 2003-03-12 TRUMPF LASERTECHNIK GmbH Process and device for deepening holes in a multilayer circuit board
DE10219388A1 (en) * 2002-04-30 2003-11-20 Siemens Ag Process for producing a trench structure in a polymer substrate
US6822191B2 (en) 2002-04-30 2004-11-23 Siemens Aktiengesellschaft Method for producing a trench structure in a polymer substrate
DE10222500A1 (en) * 2002-05-22 2003-12-18 Bosch Gmbh Robert Laser drilling or welding method has apertured shield plate positioned between workpiece surface and laser beam
DE10307309A1 (en) * 2003-02-20 2004-09-09 Siemens Ag Device and method for processing electrical circuit substrates using a laser
DE10307309B4 (en) * 2003-02-20 2007-06-14 Hitachi Via Mechanics, Ltd., Ebina Apparatus and method for processing electrical circuit substrates by means of laser
US8237082B2 (en) * 2004-09-02 2012-08-07 Siemens Aktiengesellschaft Method for producing a hole
CN101195193B (en) * 2006-10-06 2013-08-21 索尼株式会社 Laser processing apparatus, laser processing method, substrate, manufacturing method of substrate, manufacturing method of display apparatus
CN101594750B (en) * 2008-05-27 2011-01-19 南亚电路板股份有限公司 Structure and manufacturing method of high-density substrate
CN101657071B (en) * 2008-08-21 2011-05-11 欣兴电子股份有限公司 Manufacturing method of blind via structure of substrate
CN102950386A (en) * 2011-08-16 2013-03-06 悦虎电路(苏州)有限公司 Method for solving problem of pore-top suspending copper after direct pore forming with laser for circuit boards
CN111215754A (en) * 2020-02-26 2020-06-02 武汉铱科赛科技有限公司 Method, system, device and equipment for etching non-uniform insulating medium
CN111545921A (en) * 2020-03-31 2020-08-18 东莞泰升玻璃有限公司 Method for manufacturing stepped groove on glass by using laser engraving method
WO2023201860A1 (en) * 2022-04-22 2023-10-26 武汉铱科赛科技有限公司 Blind via drilling method, device, apparatus and system based on selective laser absorption

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