DE19813127A1 - Laser device with several laser light emitting diodes - Google Patents

Abstract

The laser device has several diodes which emit laser light preferably low order mode light. The diodes are arranged in a plane parallel to each other and at a distance (D) from each other. The diode light beams (10) are collimated or divergency reduced vertical to the plane in which the diodes are arranged. The diodes are formed as individual emitters (11). For decoupling from each other, the diodes are spaced by a distance. This prevents the beams from the individual emitters running into each other before the beams enter into a micro-lens arrangement. The microlens arrangement has a collimating or divergency reducing microlens (16) for each individual emitter beam. Preferably each lens is arranged at a distance (E) from the emitter.

Description

The invention relates to a laser device a variety of laser light, preferably low mode order emitting diodes that are arranged in an arrangement level with Ab stood parallel to each other and their light radiate from one another vertically to the arrangement plane or reduced divergence.

Diode lasers are low due to their high efficiency dimensions of great interest to industrial Commitment. The output power of a single emitting However, the diode is limited to a few 100 mW. For performance emitting diodes will increase in their PN junction layer arranged side by side and thereby to an emitter group summarized. Such a conventional diode with The group typically consists of 20 individual emitters. Everyone Single emitter has cross-sectional dimensions of 3.5.1 µm and the separation distance between two individual emitters is approximately 10 microns, so that the expansion of an emitter group of 20 emit tern is about 200 microns. The output power of such Emitter group is typically 1 to 2 W. Because of the only short distance of approx. 10 µm between two emitters Couplings between the light beams of the emitters hen, which reduces the beam quality. To continue the performance to increase several emitter groups in the PN-Over aisle level next to each other, creating a diode laser ingot arises, which is typically 10 mm wide. With  Such a diode laser bar can achieve some 10 W. will. However, the beam quality is further reduced. By however, beam coupling does not only result in a reduction the beam quality, but the inevitable losses also lead to a reduction in specific performance.

The invention is therefore based on the object Laser device with the features mentioned above improve that one can scale the diode laser line can come without sacrificing specific performance and performance to reduce the beam quality.

From DE-C-43 14 601 is a laser device with the characteristics mentioned above. That read out a diode send laser light from diodes arranged in rows collimated perpendicular to the arrangement plane. The collimated Beams of light run to a focusing optic, from which they focused on a machining point of a workpiece the. The divergence of the known diodes in their arrangement level is low. This is because the diodes are made of one There are a large number of individual emitters. The width or length the emitter group corresponds to the width of the light beam or the length of a beam spot, the width of which is determined by the focus is determined. There are optical means that to be used that the beam spots or Light rays of several diodes or juxtaposed Emitter groups overlap to create the desired workpiece to achieve action. The known diodes or emitter groups pen have the above-mentioned disadvantages of the basic Power losses and the reduction of beam quality also on, so that there is also the task to a scaling of the diode laser power to come without there when ver ver the specific power and the beam quality wrestle.

The object is achieved in that the diodes as an cell emitters are formed and for decoupling from each other have a distance from one another in the arrangement plane, with which the rays of these individuals merge ter in the arrangement level is practically avoided before a  The radiation enters a microlens array one for each individual emitter beam in the arrangement level has collimating or divergence-reducing microlens.

It is important for the invention that the distance between the individual emitters is chosen so large that an In the rays of the individual emitters converge in the active ones Zones are negligible and the individual emitters are decoupled from each other. In connection with this is from Be interpretation that a microlens array is arranged so that the beams of the single emitters are uncoupled into the micro lens arrangement occur and this collimates decoupled leave again. With this it is possible to collimated light the single emitters radiate uncoupled from a machining process position without affecting the specific performance of the Dio the group drops significantly. Rather, there is a steep specific power through polarization multi plexing and wavelength multiplexing of diode groups or of diode laser bars. The on the suggested way built laser device enables optimal utilization of diode lasers.

The laser device can be designed so that each de Microlens located at a distance from the single emitter net, which is a maximum fill factor in the arrangement level ne set with decoupled single emitter beams leaves. The fill factor is a measure of the utilization of the Available space or the available Extension by the arrangement of laser radiation. At maxi The filling factor can be used by those involved in the beam guidance Components are optimally used, in particular they are only slightly thermally stressed. By choosing the distance it is the microlenses from the associated individual emitters possible to optimize the fill factor, that is to choose so large len that the single emitter beams just not yet in one another run differently. Such a design of the laser device can be done regardless of whether the microlenses the individual emitters are directly adjacent, or whether there is an Microlenses and the single emitters still intermediate imaging Optics are located. Also in the latter case  an adjustment of the distance of the microlens from the individual emitter is a means to optimize the fill factor.

A structurally advantageous embodiment results if the laser device is designed so that a lot Number of microlenses to a microlens array structurally ver unity and curved lens surfaces in the arrangement plane exhibit. Such a microlens array exists, for example wise from a low loss optical rod that is at a distance is arranged parallel to the individual emitters and to them has reversed lens surfaces with which it hits them laser light is collimated.

The laser device can be designed so that the Microlenses arranged directly adjacent to the individual emitters are and a directly adjacent in the radiation direction, be may be in one piece with the microlenses and vertical to Arrangement level acting collimator are assigned. Here there is a very compact design, in which the micro lenses are only a short distance from the individual emitters, be due to the comparatively large divergence of the one laser light leaving the cell emitter. Accordingly, must the collimator is also very close to the microlenses be what about the compact design mentioned in emissions direction leads.

The distance between the individual emitters in their arrangement level is much larger than in the known laser devices Opposed to them is the laser device discussed here tion appropriately so that the distance between two adjacent individual emitters in the area is from 30 to 300 microns.

Despite the comparatively large Ab stands between neighboring individual emitters it can be an advantage the microlenses not directly to the individual emitters to be placed adjacent. An advantageous development can in that between the individual emitters and the collimating microlenses one at least in the arrangement level of the single emitter intermediate imaging optical arrangement  is available. With the help of the intermediate imaging optical array voltage can be achieved that the spacing of the Mi Krolinsen less critical with regard to the individual emitters is. The implementation of such optics with little Clearances would require very high mechanical accuracies do it. This effort is made possible by the intermediate mapping op Avoidance orders. These intermediate imaging optics Regulations can also be used in particular to ensure that the fill factor is optimized. The assignment of the existing Cross-section with light radiation can be influenced more safely that, that is, without the risk of the light converging beam when the distance between the Mi Krolinsen and the individual emitters less expensive or less is critical. The collimation of the light rays in the Arrangement level of the individual emitters on the one hand and vertically to The arrangement level, on the other hand, can be spatially independent of one another other can be achieved, so that there is a higher flexibility lity and less technical effort.

An intermediate imaging optical arrangement can be used for each be selected according to requirements. Advantage it is for example to train the laser device in this way that the intermediate imaging optical arrangement telezen trical intermediate image causes.

A telecentric training of the intermediate mappers Optical arrangement can be achieved, for example, by that for the laser device a telecentric acting Mirror arrangement is present.

In addition, it is also possible to pre-laser train in such a way that a non-telecentric Lens arrangement is present.

The intermediate images described above can be found at can be realized differently. You can use reflective, re fractive, diffractive and / or refractive index-distributed Elements or their combinations are generated.  

Most of the time it will be beneficial to use the laser device to be designed so that an intermediate imaging optical arrangement a collimator acting vertically to the arrangement plane is provided is switched. The optical arrangement then does not need to be be interpreted, a divergence of the light rays verti to be able to control the arrangement level.

The laser device can be designed such that a radiation field with an optical arrangement Fill factor optical elements are downstream, which the beam lenfeld according to a predetermined beam quality in the arrangement level of the individual emitters and vertically homo genius. This will make the overall beam quality rays set so that the total radiation for vorbe certain areas of application can be better used.

It is preferred that the microlens array with a slide mant machining process is made of plastic. For example, PMMA or PC are used as plastics sets, from which diamond tools processing machining drive the required structures or geometries of the microlens array.

The object underlying the invention, the front was mentioned can also be solved in that the Dio which are designed as single emitters for decoupling guide each other with the laser light in their arrangement plane structures are provided and if necessary a beam leneinendung in a microlens arrangement, which for every single emitter beam one in the arrangement level decoupling collimating or divergence-reducing micro has lens. The structures that guide the laser light are for example waveguide. They decouple the individual ter by preventing their light rays from interlocking to run. In some use cases it may be necessary be to train the laser device so that the Single emitter detects radiation entering a microlens have an order for each individual emitter beam collimating or divergent in the arrangement level has a micro-lens that reduces genes.

The invention is based on Darge in the drawing presented embodiments explained. It shows:

FIG. 1a typical configuration of a conventional Dio denlaserbarrens emitters with a plurality of individual,

FIG. 1b, the emission of laser light of the Diodenla serbarrens of Fig. 1a,

Fig. 2a shows a top view of a schematic arrangement of a laser device dargestell te,

FIG. 2b shows the side view of the arrangement of FIG. 2a,

Fig. 3a shows a plan view of a schematic depicting lung similar to Fig. 2a, but with detailing the optics assembly,

FIG. 3b is a side view of the arrangement of Fig. 3a,

FIG. 4a similar to a plan view of an optical arrangement Fig. 2a, but with arrangement between imaging optics,

FIG. 4b shows a side view of Fig. 4a,

FIG. 5a is a top view of a schematic depicting lung another embodiment with Zvi's imaging optics assembly,

Fig. 5b is a side view of Fig. 5a,

Fig. 6a is a plan view of a laser arrangement with inter mediate optical arrangement in a special embodiment, and

Fig. 6b is a side view of the laser assembly of FIG. 6a.

FIGS. 1a, 1b each show a diode laser bar having a base body 22 which in each case has on its surface between a plurality of sub-arrays 23 is a mirror facet 24th The subarrays 23 form the active layer of the diode laser bar and each consist of 10 to 20 strip emitters or a broad strip emitter. The enlargement 25 in Fig. 1a shows 10 stripe emitters each with a height of about 1 micron, so that the active layer is about 1 to 2 microns thick. Each stripe emitter is about 3.5 microns wide and the pitch is about 10 microns, so that the width of the entire subarray for 20 stripe emitters is 200 microns and can generally be between 50 to 200 microns. The Strei fenbreite including the width of the mirror facet 23 be about 200 to 800 microns, so that there are generally shown in Fig. 1a external dimensions. The layer formed by the subarrays 23 represents the arrangement level ne, that is to say the level in which all the individual emitters are arranged parallel to one another and radiating in the same direction z.

The light from the individual emitters is spatially emitted, as shown in Fig. 1b. There are divergences in all directions x, y across the radiation direction z. The di constrict in the fast plane, namely perpendicular to the PN junction or to the active layer is - as indicated - up to 90 degrees. The divergence in the slow plane, i.e. in the plane of the active layer or the arrangement plane, amounts to up to 10 angular degrees. The intensity distribution of the laser light radiation is shown in Fig. 1b on the right for the fast level and below for the slow level. It has been assumed that each individual emitter emits basic mode radiation or radiation with a low mode order in both planes, independently of the other emitters.

For a single emitter group 23 it can be assumed that the short distances of approximately 10 μm between neighboring individual emitters cause couplings between these emitters. The emitter group's output radiation is spatially partially coherent. The beam quality in the PN junction is 40 times diffraction limited (M ² = 40). At the other level, radiation is of fundamental fashion.

The side-by-side emitter groups 24 also emit so divergent that couplings between the emitter groups or subarrays 23 arise. Due to the juxtaposition of emitter groups, the beam quality in the PN junction plane for a diode laser bar is typically 2000 times diffraction limited (M ² = 2000).

If the output power divided by the product of the beam quality factor M ² in the two mutually perpendicular directions x and y is considered as the specific power C _m, the following situations result:

• 1) Single emitter 3.5.1 µm M ² _x .M ² _y = 1
  P = 250 mW
  Cm = 0.25 W.
• 2) an emitter group M ² _x .M ² _y = 40
  P = 1 W.
  Cm = 0.05 W.
• 3) diode laser bar (10 mm.1 µm)
  M ² _x .M ² _y = 2000
  P = 20 W.
  Cm = 0.01 W.

From the above data it can be deduced that the spe Specific performance of conventional emitter groups by one Factor 5 is less than that of a single emitter. At conventional diode laser bar is the specific lei even compared to that of a single emitter gate 25 lower. With a scaling of the diode laser power it would be an advantage to do this scaling that avoided a decrease in specific performance can be.

The Fig. 2a, b illustrate the basic principle can be achieved by a decoupling of the light beams from individual emitters. A diode bar 22 is shown with an array 23 , which has 6 individual emitters 11 . Each Einzelemit ter 11 typically has a thickness of 1 micron perpendicular to the plane and 3.5 microns in the plane. Two individual emitters 11 have a distance D between them, which is typically in the range from 30 to 300 μm. With a 30 W diode laser bar with a width of 10 mm, the distance D is about 60 µm.

The light beams 10 emitted by the individual emitters 11 have a divergence, which is symbolized in FIGS . 2a, 2b by schematic conical cross sections. In Fig. 1b the conical shape is shown in perspective. The cone shape here illustrates a multiplicity of light beam cones which correspond to the number of subarrays 23 and whose radiation cones run into one another.

The light from the individual emitters 11 arrives at an optics arrangement 24 , which influences the further course of the light beams 10 in the manner described below. Importance of Be is firstly that the distance D between two individual emitters 11 is selected such that each individual emitters 11 is decoupled from the other individual emitters. 11 As a result, each individual emitter 11 emits regardless of the radiation of the other diode emitters with basic mode quality or with a low mode order. Due to the large distances or spaces, the radiation from the array 23 has a very low beam quality without further guidance and shaping of the radiation field and can therefore not be used in a meaningful manner. The intensity of each light beam 10 is symbolized by the schematic curves 25 . The optics arrangement 24 is now used to influence the radiation field optically. First, it is immediately apparent from FIG. 2a that the beams 10 do not run into one another because the distance 26 between the optical arrangement 24 and the individual elements 11 has been chosen accordingly. The optical arrangement 24 thus obviously leads to an increase in the fill factor of the array radiation in the PN junction plane or in the order level of the individual emitters 11 . In addition, the optical arrangement can be designed such that it changes or symmetrizes the beam quality in the two planes by optical means, that is to say in the arrangement plane or perpendicular to it. The rays 10 'leaving the optical arrangement 24 symbolize this by means of different curves 25 '. Above all, it is obvious that the beams 10 and 10 'are colli mated.

Because the fill factor of each 3.5 µm wide individual emitter 11 is 3.5 / D, ie only 3.5% at a distance D = 100 µm, the fill factor can be increased to over 90% by the optical arrangement 24 without the specific Performance is significantly reduced.

FIGS. 3a, 3b show a diode bar 22 at a downstream optics assembly, which consists of a micro-lens array 17 and a collimator 19th As explained in FIG. 2a, there is an array 23 with individual emitters 11 , the beams 10 of which each propagate in the z direction. As a result of the divergence, the cross section of the beam 10 increases in the PN plane, see FIG. 3a, and also in the plane perpendicular thereto, see FIG. 3b.

The microlens array 17 forms a slow axis for the beams 10 , that is to say it collimates the individual beams, which, as indicated in the plane of the illustration, run parallel to one another in the order plane. This is indicated within half of the microlens array 17 and to the right of the collimator 19 by a corresponding course of the rays 10 '. The microlens array 17 consists of a multiplicity of microlenses 16 , one microlens 16 being assigned to a single beam 10 . Each microlens 16 collimates the beam 10 in the PN transition plane, that is to say in the representation plane and, according to FIG. 3b, a bundling of the beam 10 is also achieved in the plane perpendicular thereto, that is to say in the fast plane. However, the main reduction of the divergence in the plane perpendicular to the PN transition plane, that is to say in the fast plane or in the representation plane related to FIG. 3b, is carried out by the collimator 19 . This collimator 19 is a rod-shaped microcylindrical lens, the collimation effect of which is derived from the parallelism of the boundary rays 26 .

Contrary to the illustration in Fig. 3b, the Mi can krolinsen 16 and the microlens array 17 and the collimator 19 can be also integrally formed. The relevant one-piece optical element accordingly has the individual emitters 11 in their arrangement plane curved segments or microlenses 16 and its exit surface is in the fast plane or

in the plane mi spanned by the coordinates y and z Crocylindrical curved.

The aforementioned lens elements are refractive lens elements. Their functions can also be fulfilled by suitable gradient index lenses, diffractive or reflective elements or their combinations. In any case, it is important that the arrangement brings about the collimation of the individual beams 10 before they run into one another. At the same time, the optical arrangement 24 must be designed such that the fill factor of the collimated beams 10 'is optimized, at least in relation to one of the main planes, for example in relation to the order level of the individual emitters 11 .

For a 30 W diode laser bar with a width of 10 mm, the distance between two individual emitters 11 is approximately 60 µm. Each individual emitter 11 has a typical numerical aperture in the arrangement level of the individual emitters of approximately 0.2. As a result, the focal length of the microlenses 16 and thus their distance or the distance E of the microlens array 17 from the diode laser bar 22 is only 150 μm. For the implementation of such optics arrangements, mechanical techniques are required that can only be carried out with extremely high accuracies. It is therefore desirable to reduce the technical requirements for accuracy. For this purpose, it is proposed to design the optical arrangement between imaging. The subsequent intermediate image depicts the individual emitters 11 in an image plane 27 , which can be arranged at a distance from the diode bar 22 .

Fig. 4a, 4b show an intermediate imaging optics assembly 24 having a downstream microlens array 17. The Optikanord voltage 24 forms in an image plane 27 , which is located behind the microlens array 17 . During has the microlens array 17 of Fig. 3a, 3b convex microlenses 16 which are Mikrolin sen 16 of the microlens array 17 of Fig. 4a, 4b concave. They act in a similar way, a collimation of the individual beams 10 'and are arranged at an enlarged distance E to the one cell emitters 11 , which is of orders of magnitude larger than the distance E indicated in Fig. 3a. Therefore, extremely high accuracies and the fill factor are eliminated can still be optimized to the desired extent. The intermediate image through the optical arrangement 24 can be implemented in different ways. Reflective, refractive, diffractive and / or refractive index-distributed elements or their combinations can be used.

For the formation and application of between imaging optics arrangement 24, it is advantageous if the laser radiation or the light beams of the individual emitters 11 can be collimated in fast plane ie perpendicular to the plane of arrangement of the individual emitter 11 or divergence-reducing 10 before the A zelstrahlen 10 of the optics assembly 24 are supplied. This collimation results from FIG. 4b, in which a collimator 19 is shown in cross section. It can be seen that the collimation perpendicular to the PN junction plane in a flat design of the optical arrangement 24 and the microlens array 17 can have an effect.

A preferred embodiment of a telecentrically effective optical arrangement 24 is shown in FIGS . 6a, 6b. A mirror arrangement causes a telecentric Zwischenab formation with an enlargement of about 1. There are the beam paths of two individual beams 10 from individual emitters 11 . After collimation, the individual beams reach perpendicular to the arrangement plane of the individual emitters 11 to a first reflective mirror 28 , from the concave mirror surface 28 'of which the laser radiation is fed to a convex mirror surface 29 ' of a second mirror 29 , which is arranged axially with the first mirror 28 and as a result, the laser radiation returns to the mirror 28 , which radiates the laser radiation to a microlens array 17 . It can be seen from Fig. 6a that he follows a beam shaping in which the beam cross sections are matched to the dimensions of the microlenses 16 , so that the collimation of the individual beams 10 'results from Fig. 6a. A substantial merging of the individual beams 10 can be avoided by configurations and measurements of the mirrors 28 , 29 ( not shown in detail).

With a non-telecentric lens arrangement formed Figs. 5a, 5b show how an optical assembly 24 who can the. A light beam emerging from a single emitter is first collimated with a collimator 19 as a fast axis in the associated fast plane, that is to say perpendicular to the arrangement plane of the individual emitters 11 , as shown in FIG. 5b. Downstream of the collimator 19 is an imaging optics 30 , which cooperates with a special lens 31 , the entry surface 32 of which acts like a facet lens and the exit surface of which is configured as a microlens array 17 with a multiplicity of microlenses 16 . The facet lens 31 is used to image the image plane 27 . An alternative to the faceted lens is a Fresnel lens. With this non-tele central lens arrangement it is also achieved that a single rays are collimated, in the z-direction, also perpendicular to the arrangement plane of the individual emitters 11 . In this case, too, the microlenses 16 are at a distance E from the diode bar 22 , which does not make it necessary to use manufacturing techniques with extremely high accuracies.

A radiation field of an emitter array with an increased fill factor, as is symbolized, for example, by the individual beams denoted by 10 ', has different beam quality factors in the two x, y planes perpendicular to one another. This type of radiation is unsuitable for many applications, such as fiber coupling and end pumping of solid-state lasers. For this, the beam quality must be homogenized in the two levels. For this purpose, an optical arrangement for adapting and homogenizing the beam quality is connected downstream of the radiation field. This Op tikanordnung has the task of grouping and rearranging the radiation field in a suitable manner, so that a desired beam quality can be set in the directions over the total beam cross-section, ie in the arrangement plane of the individual emitters and vertically to it. An example optical arrangement can be realized as a pair of stair mirrors, as two plane-parallel plates and others.

The main advantage of diode bars or laser devices, which are designed as described above, is a maximum use of the entire laser device. It is used in such a way that the diode lasers can also be used as replacements for lamp-focused solid-state lasers for cutting and welding metals. This results from the following comparison with commercially available lamp-pumped solid-state lasers, which for example have an output of 3000 W with a beam quality factor of M ² = 100. This results in a specific power of C _m = 3000 W / 100.100 = 0.3 W. The specific power of a single emitter is C _m = 0.25 W, which is only slightly less than the specific power of a conventional solid-state laser. A diode laser bar optimized according to the invention or a laser device produced with such bars has, if it works without loss of beam quality, thus also has a specific power of 0.25 W. Despite the invention, unavoidable losses that reduce the specific power occur but catch up with polarization multiplexing and wavelength multiplexing. By coupling the diode laser through polarization and / or wavelength, the specific power can be increased sufficiently.

Claims (15)

1. Laser device with a large number of laser light, preferably low mode order emitting diodes, which are arranged parallel to one another in a plane of arrangement and whose light beams ( 10 ) are collimated or diverge-reduced from one another vertically to the plane of arrangement, characterized in that the diodes as individual emitters ( 11 ) are formed and for decoupling from each other in the arrangement level from (D) from each other, with which the rays ( 10 ) of these individual emitters ( 11 ) run into one another is practically avoided in the arrangement plane before radiation occurs in a microlens arrangement, which for each individual emitter beam ( 10 ) has a microlens ( 16 ) which collimates or reduces divergence in the arrangement plane. 2. Laser device according to claim 1, characterized in that each microlens ( 16 ) at a distance (E) from the single emitter ( 11 ) is arranged, which allows a ma ximal fill factor in the arrangement plane at decoupling th single emitter beams ( 10 ). 3. Laser device according to claim 1 or 2, characterized in that a plurality of microlenses ( 16 ) are structurally combined to form a microlens array ( 17 ) and curved lens surfaces in the arrangement plane have sen. 4. Laser device according to one of claims 1 to 3, characterized in that the microlenses ( 16 ) the individual emitters ( 11 ) are arranged directly adjacent and one in the radiation direction (z) directly adjacent, if necessary with the microlenses ( 16 ) in one piece and vertically Collimator ( 19 ) acting to the arrangement level are assigned. 5. Laser device according to one of claims 1 to 4, characterized in that the distance (D) between two adjacent individual emitters ( 11 ) is in the range from 30 to 300 microns. 6. Laser device according to one of claims 1 to 5, characterized in that between the individual emitters ( 11 ) and the collimating microlenses ( 16 ) at least in the arrangement level of the individual emitters ( 11 ) inter mediate optical arrangement ( 24 ) is present. 7. Laser device according to one of claims 1 to 6, characterized in that the intermediate imaging Op tikananordnung ( 24 ) causes a telecentric intermediate image. 8. Laser device according to claim 7, characterized in that a telecentrically acting Spiegelanord voltage ( 20 ) is present. 9. Laser device according to one of claims 1 to 8, characterized in that a non-telecentrically acting lens arrangement ( 21 ) is present. 10. Laser device according to one of claims 1 to 9, characterized in that an intermediate imaging optical arrangement acting vertically to the arrangement level of the collimator ( 19 ) is connected upstream. 11. Laser device according to one of claims 1 to 10, characterized in that a radiation field with an optical arrangement ( 24 ) optimized filling factor are connected downstream optical elements that homogenize the radiation field according to a predetermined beam quality in the arrangement plane of the individual emitters and vertically thereto. 12. Laser device according to one of claims 1 to 11, characterized in that the microlens array ( 17 ) with a diamond processing method is made of plastic. 13. Laser device with a plurality of laser light, preferably low mode order emitting diodes, which are arranged parallel to one another in a plane of arrangement and whose light beams ( 10 ) are collimated or diverge-reduced from one another vertically to the plane of arrangement, characterized in that the diodes as individual emitters ( 11 ) are formed, which are provided for decoupling from one another with the laser light in their order-guiding structures and may have a beam entry into a microlens arrangement, which for each individual emitter beam ( 10 ) decouples it in the arrangement plane, collimating or divergence-reducing microlens ( 16 ) having. 14. The use of a microlens arrangement for the decoupling collimation or divergence reduction of single emitter beams ( 10 ) of a preferably a workpiece machining laser device, the mutually parallel single emitters ( 11 ) for decoupling from one another in an arrangement plane at a distance (D) from each other, and each a microlens ( 16 ) is assigned at a distance which has a maximum filling factor of the individual emitter beams ( 10 ) in the arrangement plane of the individual emitters ( 11 ). 15. The use of mutually parallel individual emitters ( 11 ) with their laser light in their arrangement plane lead the structures to decoupling collimation or divergence reduction of individual emitter beams ( 10 ) of a laser device which is preferably used for workpiece processing.