DE19982177T1 - Deposition eines Siloxan enthaltenden Polymeren - Google Patents

Deposition eines Siloxan enthaltenden Polymeren

Info

Publication number
DE19982177T1
DE19982177T1 DE19982177T DE19982177T DE19982177T1 DE 19982177 T1 DE19982177 T1 DE 19982177T1 DE 19982177 T DE19982177 T DE 19982177T DE 19982177 T DE19982177 T DE 19982177T DE 19982177 T1 DE19982177 T1 DE 19982177T1
Authority
DE
Germany
Prior art keywords
deposition
polymer containing
containing siloxane
siloxane
polymer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19982177T
Other languages
English (en)
Inventor
Steven Carter
Christine Janet Shearer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Trikon Equipments Ltd
Original Assignee
Trikon Equipments Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Trikon Equipments Ltd filed Critical Trikon Equipments Ltd
Publication of DE19982177T1 publication Critical patent/DE19982177T1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H01L21/3121—Layers comprising organo-silicon compounds
    • H01L21/3122—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds
DE19982177T 1998-01-23 1999-01-20 Deposition eines Siloxan enthaltenden Polymeren Withdrawn DE19982177T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB9801359.2A GB9801359D0 (en) 1998-01-23 1998-01-23 Methods and apparatus for treating a substrate
PCT/GB1999/000191 WO1999038202A1 (en) 1998-01-23 1999-01-20 Deposition of a siloxane containing polymer

Publications (1)

Publication Number Publication Date
DE19982177T1 true DE19982177T1 (de) 2001-01-18

Family

ID=10825710

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19982177T Withdrawn DE19982177T1 (de) 1998-01-23 1999-01-20 Deposition eines Siloxan enthaltenden Polymeren

Country Status (6)

Country Link
US (2) US6475564B1 (de)
JP (1) JP2002502114A (de)
KR (1) KR100637560B1 (de)
DE (1) DE19982177T1 (de)
GB (2) GB9801359D0 (de)
WO (1) WO1999038202A1 (de)

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US6627532B1 (en) * 1998-02-11 2003-09-30 Applied Materials, Inc. Method of decreasing the K value in SiOC layer deposited by chemical vapor deposition
US6068884A (en) * 1998-04-28 2000-05-30 Silcon Valley Group Thermal Systems, Llc Method of making low κ dielectric inorganic/organic hybrid films
US6159871A (en) * 1998-05-29 2000-12-12 Dow Corning Corporation Method for producing hydrogenated silicon oxycarbide films having low dielectric constant
US6800571B2 (en) * 1998-09-29 2004-10-05 Applied Materials Inc. CVD plasma assisted low dielectric constant films
US6524974B1 (en) * 1999-03-22 2003-02-25 Lsi Logic Corporation Formation of improved low dielectric constant carbon-containing silicon oxide dielectric material by reaction of carbon-containing silane with oxidizing agent in the presence of one or more reaction retardants
US6156743A (en) * 1999-10-18 2000-12-05 Whitcomb; John E. Method of decreasing fatigue
US6147012A (en) * 1999-11-12 2000-11-14 Lsi Logic Corporation Process for forming low k silicon oxide dielectric material while suppressing pressure spiking and inhibiting increase in dielectric constant
US6531398B1 (en) 2000-10-30 2003-03-11 Applied Materials, Inc. Method of depositing organosillicate layers
US6583048B2 (en) 2001-01-17 2003-06-24 Air Products And Chemicals, Inc. Organosilicon precursors for interlayer dielectric films with low dielectric constants
JP3924483B2 (ja) * 2001-03-19 2007-06-06 アイピーエス リミテッド 化学気相蒸着装置
US6486082B1 (en) 2001-06-18 2002-11-26 Applied Materials, Inc. CVD plasma assisted lower dielectric constant sicoh film
US6887780B2 (en) 2001-08-31 2005-05-03 Intel Corporation Concentration graded carbon doped oxide
US6756085B2 (en) * 2001-09-14 2004-06-29 Axcelis Technologies, Inc. Ultraviolet curing processes for advanced low-k materials
US6677253B2 (en) 2001-10-05 2004-01-13 Intel Corporation Carbon doped oxide deposition
US6936309B2 (en) 2002-04-02 2005-08-30 Applied Materials, Inc. Hardness improvement of silicon carboxy films
US6815373B2 (en) 2002-04-16 2004-11-09 Applied Materials Inc. Use of cyclic siloxanes for hardness improvement of low k dielectric films
US20040033371A1 (en) * 2002-05-16 2004-02-19 Hacker Nigel P. Deposition of organosilsesquioxane films
US8137764B2 (en) * 2003-05-29 2012-03-20 Air Products And Chemicals, Inc. Mechanical enhancer additives for low dielectric films
US7582555B1 (en) 2005-12-29 2009-09-01 Novellus Systems, Inc. CVD flowable gap fill
US7524735B1 (en) 2004-03-25 2009-04-28 Novellus Systems, Inc Flowable film dielectric gap fill process
US9257302B1 (en) 2004-03-25 2016-02-09 Novellus Systems, Inc. CVD flowable gap fill
US9245739B2 (en) 2006-11-01 2016-01-26 Lam Research Corporation Low-K oxide deposition by hydrolysis and condensation
US7888273B1 (en) 2006-11-01 2011-02-15 Novellus Systems, Inc. Density gradient-free gap fill
KR101880838B1 (ko) * 2008-08-04 2018-08-16 더 트러스티즈 오브 프린스턴 유니버시티 박막 트랜지스터용 하이브리드 유전 재료
US20110068332A1 (en) * 2008-08-04 2011-03-24 The Trustees Of Princeton University Hybrid Dielectric Material for Thin Film Transistors
US8557712B1 (en) 2008-12-15 2013-10-15 Novellus Systems, Inc. PECVD flowable dielectric gap fill
US8278224B1 (en) 2009-09-24 2012-10-02 Novellus Systems, Inc. Flowable oxide deposition using rapid delivery of process gases
KR101758944B1 (ko) 2009-12-09 2017-07-18 노벨러스 시스템즈, 인코포레이티드 신규한 갭 충진 집적화
US8685867B1 (en) 2010-12-09 2014-04-01 Novellus Systems, Inc. Premetal dielectric integration process
US9719169B2 (en) 2010-12-20 2017-08-01 Novellus Systems, Inc. System and apparatus for flowable deposition in semiconductor fabrication
US8846536B2 (en) 2012-03-05 2014-09-30 Novellus Systems, Inc. Flowable oxide film with tunable wet etch rate
US9847222B2 (en) 2013-10-25 2017-12-19 Lam Research Corporation Treatment for flowable dielectric deposition on substrate surfaces
US10049921B2 (en) 2014-08-20 2018-08-14 Lam Research Corporation Method for selectively sealing ultra low-k porous dielectric layer using flowable dielectric film formed from vapor phase dielectric precursor
US10388546B2 (en) 2015-11-16 2019-08-20 Lam Research Corporation Apparatus for UV flowable dielectric
US9916977B2 (en) 2015-11-16 2018-03-13 Lam Research Corporation Low k dielectric deposition via UV driven photopolymerization

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5314845A (en) * 1989-09-28 1994-05-24 Applied Materials, Inc. Two step process for forming void-free oxide layer over stepped surface of semiconductor wafer
US4992306A (en) * 1990-02-01 1991-02-12 Air Products Abd Chemicals, Inc. Deposition of silicon dioxide and silicon oxynitride films using azidosilane sources
EP0519079B1 (de) * 1991-01-08 1999-03-03 Fujitsu Limited Verfahren zur bildung eines siliciumoxid-filmes
JP3262334B2 (ja) 1992-07-04 2002-03-04 トリコン ホルディングズ リミテッド 半導体ウエハーを処理する方法
JPH08213378A (ja) * 1994-11-09 1996-08-20 Hitachi Electron Eng Co Ltd プラズマｃｖｄ装置及び酸化膜の成膜方法
US5962581A (en) * 1995-04-28 1999-10-05 Kabushiki Kaisha Toshiba Silicone polymer composition, method of forming a pattern and method of forming an insulating film
US5637351A (en) * 1995-05-11 1997-06-10 Air Products And Chemicals, Inc. Chemical vapor deposition (CVD) of silicon dioxide films using oxygen-silicon source reactants and a free radical promoter
JPH10209148A (ja) * 1997-01-27 1998-08-07 Sony Corp 低誘電率絶縁体膜の形成方法およびこれを用いた半導体装置
US6054379A (en) * 1998-02-11 2000-04-25 Applied Materials, Inc. Method of depositing a low k dielectric with organo silane

Also Published As

Publication number Publication date
GB0010337D0 (en) 2000-06-14
KR20010031688A (ko) 2001-04-16
KR100637560B1 (ko) 2006-10-20
WO1999038202A1 (en) 1999-07-29
US6475564B1 (en) 2002-11-05
GB2346898B (en) 2003-01-29
GB9801359D0 (en) 1998-03-18
JP2002502114A (ja) 2002-01-22
GB2346898A (en) 2000-08-23
US20030012877A1 (en) 2003-01-16

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Legal Events

Date Code Title Description
8128 New person/name/address of the agent

Representative=s name: ZEITLER, VOLPERT, KANDLBINDER, 80539 MUENCHEN

8141 Disposal/no request for examination