DE19983808T1 - Differenz-VGMR-Sensor - Google Patents

Differenz-VGMR-Sensor

Info

Publication number
DE19983808T1
DE19983808T1 DE19983808T DE19983808T DE19983808T1 DE 19983808 T1 DE19983808 T1 DE 19983808T1 DE 19983808 T DE19983808 T DE 19983808T DE 19983808 T DE19983808 T DE 19983808T DE 19983808 T1 DE19983808 T1 DE 19983808T1
Authority
DE
Germany
Prior art keywords
difference
vgmr sensor
vgmr
sensor
difference vgmr
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19983808T
Other languages
English (en)
Inventor
Brenda Anne Everitt
Taras Grigorievich Pokhil
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seagate Technology LLC
Original Assignee
Seagate Technology LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seagate Technology LLC filed Critical Seagate Technology LLC
Publication of DE19983808T1 publication Critical patent/DE19983808T1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/02—Recording, reproducing, or erasing methods; Read, write or erase circuits therefor
    • G11B5/09—Digital recording
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/1278—Structure or manufacture of heads, e.g. inductive specially adapted for magnetisations perpendicular to the surface of the record carrier
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3945—Heads comprising more than one sensitive element
    • G11B5/3948—Heads comprising more than one sensitive element the sensitive elements being active read-out elements
    • G11B5/3951—Heads comprising more than one sensitive element the sensitive elements being active read-out elements the active elements being arranged on several parallel planes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3945—Heads comprising more than one sensitive element
    • G11B5/3948—Heads comprising more than one sensitive element the sensitive elements being active read-out elements
    • G11B5/3951—Heads comprising more than one sensitive element the sensitive elements being active read-out elements the active elements being arranged on several parallel planes
    • G11B5/3954—Heads comprising more than one sensitive element the sensitive elements being active read-out elements the active elements being arranged on several parallel planes the active elements transducing on a single track
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B2005/0002—Special dispositions or recording techniques
    • G11B2005/0005—Arrangements, methods or circuits
    • G11B2005/001—Controlling recording characteristics of record carriers or transducing characteristics of transducers by means not being part of their structure
    • G11B2005/0013—Controlling recording characteristics of record carriers or transducing characteristics of transducers by means not being part of their structure of transducers, e.g. linearisation, equalisation
    • G11B2005/0016—Controlling recording characteristics of record carriers or transducing characteristics of transducers by means not being part of their structure of transducers, e.g. linearisation, equalisation of magnetoresistive transducers
    • G11B2005/0018—Controlling recording characteristics of record carriers or transducing characteristics of transducers by means not being part of their structure of transducers, e.g. linearisation, equalisation of magnetoresistive transducers by current biasing control or regulation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
DE19983808T 1998-11-20 1999-10-06 Differenz-VGMR-Sensor Withdrawn DE19983808T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10928898P 1998-11-20 1998-11-20
US11676399P 1999-01-22 1999-01-22
PCT/US1999/023119 WO2000030077A1 (en) 1998-11-18 1999-10-06 Differential vgmr sensor

Publications (1)

Publication Number Publication Date
DE19983808T1 true DE19983808T1 (de) 2002-01-10

Family

ID=26806822

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19983808T Withdrawn DE19983808T1 (de) 1998-11-20 1999-10-06 Differenz-VGMR-Sensor

Country Status (6)

Country Link
US (1) US6556388B1 (de)
JP (1) JP2003529199A (de)
KR (1) KR20010075724A (de)
DE (1) DE19983808T1 (de)
GB (1) GB2362985B (de)
WO (1) WO2000030077A1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005060713A1 (de) * 2005-12-19 2007-06-21 Austriamicrosystems Ag Magnetfeldsensoranordnung und Verfahren zur berührungslosen Messung eines Magnetfeldes

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US6621664B1 (en) * 2000-02-28 2003-09-16 Seagate Technology Llc Perpendicular recording head having integrated read and write portions
US6798623B2 (en) * 2001-02-08 2004-09-28 Seagate Technology Llc Biased CPP sensor using spin-momentum transfer
US6911826B2 (en) * 2001-06-12 2005-06-28 General Electric Company Pulsed eddy current sensor probes and inspection methods
US7271986B2 (en) * 2002-05-15 2007-09-18 Seagate Technology Llc V-shape magnetic field sensor with anisotropy induced orthogonal magnetic alignment
DE10236983A1 (de) * 2002-08-13 2004-03-04 Robert Bosch Gmbh Magnetsensoranordnung
US6963071B2 (en) * 2002-11-25 2005-11-08 Intel Corporation Debris mitigation device
US6714446B1 (en) * 2003-05-13 2004-03-30 Motorola, Inc. Magnetoelectronics information device having a compound magnetic free layer
US7183893B2 (en) * 2004-02-04 2007-02-27 Seagate Technology Llc TMR sensor with oxidized alloy barrier layer and method for forming the same
US7477490B2 (en) * 2004-06-30 2009-01-13 Seagate Technology Llc Single sensor element that is naturally differentiated
KR100647319B1 (ko) * 2005-02-05 2006-11-23 삼성전자주식회사 스핀 분극 전류를 이용한 멀티 비트 자기 메모리 소자와그 제조 및 구동 방법
US7715154B2 (en) * 2005-04-13 2010-05-11 Seagate Technology Llc Suppression of spin momentum transfer and related torques in magnetoresistive elements
US7573684B2 (en) * 2005-04-13 2009-08-11 Seagate Technology Llc Current-in-plane differential magnetic tri-layer sensor
US7835116B2 (en) * 2005-09-09 2010-11-16 Seagate Technology Llc Magnetoresistive stack with enhanced pinned layer
WO2008075610A1 (ja) * 2006-12-20 2008-06-26 Alps Electric Co., Ltd. 磁気検出装置
US20110007426A1 (en) * 2009-07-13 2011-01-13 Seagate Technology Llc Trapezoidal back bias and trilayer reader geometry to enhance device performance
US20110026169A1 (en) * 2009-07-28 2011-02-03 Hardayal Singh Gill Dual cpp gmr head using a scissor sensor
US8582250B2 (en) * 2009-12-04 2013-11-12 Seagate Technology Llc Double biasing for trilayer MR sensors
US8390963B2 (en) * 2011-04-25 2013-03-05 Seagate Technology Llc Trilayer reader with current constraint at the ABS
CN110573895B (zh) * 2017-04-25 2022-04-29 柯尼卡美能达株式会社 磁传感器

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US5390061A (en) 1990-06-08 1995-02-14 Hitachi, Ltd. Multilayer magnetoresistance effect-type magnetic head
JPH05183212A (ja) 1991-07-30 1993-07-23 Toshiba Corp 磁気抵抗効果素子
US5549978A (en) 1992-10-30 1996-08-27 Kabushiki Kaisha Toshiba Magnetoresistance effect element
US5576915A (en) 1993-03-15 1996-11-19 Kabushiki Kaisha Toshiba Magnetoresistive head with antiferromagnetic sublayers interposed between first and second spin-valve units to exchange bias inner magnetic films thereof
JPH0721530A (ja) * 1993-06-30 1995-01-24 Toshiba Corp 磁気抵抗効果型ヘッド
US5828525A (en) * 1994-03-15 1998-10-27 Kabushiki Kaisha Toshiba Differential detection magnetoresistance head
US5442508A (en) * 1994-05-25 1995-08-15 Eastman Kodak Company Giant magnetoresistive reproduce head having dual magnetoresistive sensor
US5583725A (en) 1994-06-15 1996-12-10 International Business Machines Corporation Spin valve magnetoresistive sensor with self-pinned laminated layer and magnetic recording system using the sensor
US5576914A (en) * 1994-11-14 1996-11-19 Read-Rite Corporation Compact read/write head having biased GMR element
US5701222A (en) * 1995-09-11 1997-12-23 International Business Machines Corporation Spin valve sensor with antiparallel magnetization of pinned layers
JPH09274710A (ja) * 1996-04-04 1997-10-21 Fujitsu Ltd スピンバルブ磁気抵抗効果ヘッドとその製造方法及び磁気記録装置
US5869963A (en) * 1996-09-12 1999-02-09 Alps Electric Co., Ltd. Magnetoresistive sensor and head
US5751521A (en) * 1996-09-23 1998-05-12 International Business Machines Corporation Differential spin valve sensor structure
US5859754A (en) * 1997-04-03 1999-01-12 Read-Rite Corporation Magnetoresistive transducer having a common magnetic bias using assertive and complementary signals
JPH10302203A (ja) * 1997-04-25 1998-11-13 Hitachi Ltd 垂直磁気記録装置
US6469873B1 (en) * 1997-04-25 2002-10-22 Hitachi, Ltd. Magnetic head and magnetic storage apparatus using the same
US5818685A (en) * 1997-05-05 1998-10-06 Read-Rite Corporation CIP GMR sensor coupled to biasing magnet with spacer therebetween
US5825595A (en) 1997-05-13 1998-10-20 International Business Machines Corporation Spin valve sensor with two spun values separated by an insulated current conductor
US5748399A (en) 1997-05-13 1998-05-05 International Business Machines Corporation Resettable symmetric spin valve
US5858455A (en) 1997-10-09 1999-01-12 International Business Machines Corporation Method for forming a lateral giant magnetoresistance multilayer for a magnetoresistive sensor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005060713A1 (de) * 2005-12-19 2007-06-21 Austriamicrosystems Ag Magnetfeldsensoranordnung und Verfahren zur berührungslosen Messung eines Magnetfeldes
US7906961B2 (en) 2005-12-19 2011-03-15 Austrianmicrosystems AG Magnetic field sensor arrangement and method for non-contact measurement of a magnetic field
DE102005060713B4 (de) * 2005-12-19 2019-01-24 Austriamicrosystems Ag Magnetfeldsensoranordnung und Verfahren zur berührungslosen Messung eines Magnetfeldes

Also Published As

Publication number Publication date
WO2000030077A9 (en) 2000-09-21
GB2362985B (en) 2003-06-25
US6556388B1 (en) 2003-04-29
GB0111769D0 (en) 2001-07-04
GB2362985A (en) 2001-12-05
WO2000030077A1 (en) 2000-05-25
KR20010075724A (ko) 2001-08-09
JP2003529199A (ja) 2003-09-30

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8139 Disposal/non-payment of the annual fee