DE19983948T1 - Spinventilsensor mit spiegelnder Elektronenstreuung in freier Schicht - Google Patents

Spinventilsensor mit spiegelnder Elektronenstreuung in freier Schicht

Info

Publication number
DE19983948T1
DE19983948T1 DE19983948T DE19983948T DE19983948T1 DE 19983948 T1 DE19983948 T1 DE 19983948T1 DE 19983948 T DE19983948 T DE 19983948T DE 19983948 T DE19983948 T DE 19983948T DE 19983948 T1 DE19983948 T1 DE 19983948T1
Authority
DE
Germany
Prior art keywords
free layer
spin valve
valve sensor
electron scattering
specular
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19983948T
Other languages
English (en)
Inventor
Alexander M Shukh
Edward S Murdock
Anthony M Mack
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seagate Technology LLC
Original Assignee
Seagate Technology LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seagate Technology LLC filed Critical Seagate Technology LLC
Publication of DE19983948T1 publication Critical patent/DE19983948T1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3295—Spin-exchange coupled multilayers wherein the magnetic pinned or free layers are laminated without anti-parallel coupling within the pinned and free layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/32—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film
    • H01F41/325—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film applying a noble metal capping on a spin-exchange-coupled multilayer, e.g. spin filter deposition
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
DE19983948T 1999-04-20 1999-09-02 Spinventilsensor mit spiegelnder Elektronenstreuung in freier Schicht Withdrawn DE19983948T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13015499P 1999-04-20 1999-04-20
PCT/US1999/020151 WO2000063715A1 (en) 1999-04-20 1999-09-02 Spin valve sensor with specular electron scattering in free layer

Publications (1)

Publication Number Publication Date
DE19983948T1 true DE19983948T1 (de) 2002-04-11

Family

ID=22443315

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19983948T Withdrawn DE19983948T1 (de) 1999-04-20 1999-09-02 Spinventilsensor mit spiegelnder Elektronenstreuung in freier Schicht

Country Status (6)

Country Link
US (1) US6667616B1 (de)
JP (1) JP2002542618A (de)
KR (1) KR20010113813A (de)
DE (1) DE19983948T1 (de)
GB (1) GB2363642B (de)
WO (1) WO2000063715A1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020006021A1 (en) * 2000-07-13 2002-01-17 Beach Robert S. Spin valve sensor with an antiferromagnetic layer between two pinned layers
US20020131215A1 (en) * 2001-03-14 2002-09-19 Beach Robert S. Tunnel junction and charge perpendicular-to-plane magnetic recording sensors and method of manufacture
US7092219B2 (en) * 2001-07-06 2006-08-15 International Business Machines Corporation Method for fabricating seed layer for spin valve sensor for magnetic heads for hard disk drives
JP4690675B2 (ja) * 2004-07-30 2011-06-01 株式会社東芝 磁気抵抗効果素子、磁気ヘッド、および磁気記録再生装置
JP4521316B2 (ja) * 2005-05-26 2010-08-11 株式会社東芝 磁気抵抗効果素子、磁気ヘッド、および磁気記録再生装置
JP4764294B2 (ja) * 2006-09-08 2011-08-31 株式会社東芝 磁気抵抗効果素子、及び磁気ヘッド
US9214172B2 (en) 2013-10-23 2015-12-15 Western Digital (Fremont), Llc Method of manufacturing a magnetic read head

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5206590A (en) * 1990-12-11 1993-04-27 International Business Machines Corporation Magnetoresistive sensor based on the spin valve effect
US5465185A (en) * 1993-10-15 1995-11-07 International Business Machines Corporation Magnetoresistive spin valve sensor with improved pinned ferromagnetic layer and magnetic recording system using the sensor
US5408377A (en) * 1993-10-15 1995-04-18 International Business Machines Corporation Magnetoresistive sensor with improved ferromagnetic sensing layer and magnetic recording system using the sensor
JPH0983039A (ja) * 1995-09-14 1997-03-28 Nec Corp 磁気抵抗効果素子
US5768069A (en) * 1996-11-27 1998-06-16 International Business Machines Corporation Self-biased dual spin valve sensor
DE69623787T2 (de) 1996-11-27 2003-05-28 Eta S A Fabriques D Ebauches G Elektromagnetischer Motor mit zwei koaxialen Rotoren
US6535362B2 (en) * 1996-11-28 2003-03-18 Matsushita Electric Industrial Co., Ltd. Magnetoresistive device having a highly smooth metal reflective layer

Also Published As

Publication number Publication date
GB2363642A (en) 2002-01-02
KR20010113813A (ko) 2001-12-28
WO2000063715A1 (en) 2000-10-26
US6667616B1 (en) 2003-12-23
JP2002542618A (ja) 2002-12-10
GB2363642B (en) 2003-09-10
GB0124154D0 (en) 2001-11-28

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Legal Events

Date Code Title Description
8141 Disposal/no request for examination