DE2629356A1 - Simultaneous MODEM of optical signals - with one of two diodes being transparent for wavelength delivered or received by second diode - Google Patents

Simultaneous MODEM of optical signals - with one of two diodes being transparent for wavelength delivered or received by second diode

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Publication number
DE2629356A1
DE2629356A1 DE19762629356 DE2629356A DE2629356A1 DE 2629356 A1 DE2629356 A1 DE 2629356A1 DE 19762629356 DE19762629356 DE 19762629356 DE 2629356 A DE2629356 A DE 2629356A DE 2629356 A1 DE2629356 A1 DE 2629356A1
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Germany
Prior art keywords
diode
diodes
wavelengths
transparent
received
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Granted
Application number
DE19762629356
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German (de)
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DE2629356C2 (en
Inventor
Michael Dr Ing Kuhn
Joerg Dr Ing Mueller
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Bosch Telecom GmbH
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Licentia Patent Verwaltungs GmbH
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Priority to DE2629356A priority Critical patent/DE2629356C2/en
Publication of DE2629356A1 publication Critical patent/DE2629356A1/en
Application granted granted Critical
Publication of DE2629356C2 publication Critical patent/DE2629356C2/en
Expired legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/041—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L31/00
    • H01L25/043—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0756—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

Signals are transmitted through an optical fibre transmission line to two transmitter or receiver diodes are superposd on each other so that looking in the propagation direction which in case of modulation, the second diode (2) is transparent for wavelengths delivered by the first diode (3), and in case of demodulation the first diode is transparent for wavelength to be received by the second diode. The first diode (3) has a flat metalised coating (16) on its rear side, and a metallised coating (15) on the upper side with a cut-out which matches a similar pattern on the other diode. The upper surface of the second diode (2) also has a cut-out in the metallising (13) to permit the passage of both wavelengths.

Description

Anordnung zum gleichzeitigen Modulieren oder DemodulierenArrangement for simultaneous modulation or demodulation

von Signalen sehr unterschiedlicher Wellenlänge bei einer optischen Nachrichtenstrecke Die Erfindung befaßt sich mit einer Anordnung zum gleichzeitigen Modulieren oder Demodulieren von Signalen sehr unterschiedlicher Wellenlänge, die über eine optische Nachrichtenstrecke1 insbesondere eine Lichtleitfaserstrecke, übertragen werden.of signals of very different wavelengths with an optical one Communication line The invention is concerned with an arrangement for simultaneous Modulating or demodulating signals of very different wavelengths that via an optical communication link1, in particular an optical fiber link, be transmitted.

Bei optischen Nachrichtenverbindungen, insbesondere bei solchen, die mittels Lichtleitfasern aufgebaut sind, besteht oft die Notwendigkeit, Signale mit sehr unterschiedlicher Wellenlänge über diese Strecke auszusenden oder zu empfangen. Hierfür ist es erforderlich, daß man für die unterschiedlichen Wellenlängen getrennte Modulations- bzw. Demodulationseinrichtungen verwendet, die mit Hilfe entsprechender Filter und Koppler auf die Strecke geschaltet werden.With optical communication links, especially those that are constructed by means of optical fibers, there is often the need to use signals to send or receive very different wavelengths over this route. For this it is necessary to separate for the different wavelengths Modulation or demodulation devices used that with With the help of appropriate filters and couplers, they can be switched to the route.

Die Erfindung hat sich nun die Aufgabe gestellt, eine derartige Schaltungsanordnung zu vereinfachen, so daß man insbesondere mit weniger Filtern auskommt.The invention has now set itself the task of providing such a circuit arrangement to simplify, so that you can manage in particular with fewer filters.

Erfindungsgemäß wird dies dadurch gelöst, daß zwei Sende-oder Empfangsdioden derart übereinandergelegt sind, daß in Strahlrichtung gesehen im Falle der Modulation die zweite Diode für die von der ersten Diode abgegebenen Wellenlängen und im Falle der Demodulation die erste Diode für die von der zweiten Diode zu empfangenden Wellenlängen durchlässig ausgebildet sind.According to the invention, this is achieved in that two transmitting or receiving diodes are superimposed in such a way that seen in the beam direction in the case of modulation the second diode for the wavelengths emitted by the first diode and in the case the demodulation the first diode for the wavelengths to be received by the second diode are designed to be permeable.

Anhand der Figuren soll die im folgenden näher erläutert werden.The will be explained in more detail below with the aid of the figures.

Die Fig. 1 zeigt einen schematischen Querschnitt durch eine erfindungsgemäß aufgebaute Diodenanordnung zur Verwendung auf der Sendeseite, d.h. zur Modulation der auszusendenden Signale. Die gewellten Linien hy stellen dabei die Strahlrichtung der optischen Signale dar. Die beiden Dioden 2 und 3 sind übereinander angeordnet. Mit 13 ifit dabei die obere Metallisierung für einen Anschlußkontakt der Diode und mit 6 die Metallisierung für den anderen Anschlußkontakt der Diods 2 bezeichnet. Die untere Metallisierung 6 ist mit einer Aussparung 1 versehen, so daß die von der Diode 3 ausgehende Strahlung durch diese Öffnung hindurch die Diode 2 durchdringen kann. Die untere Diode 3 ist in ähnlicher Weise aufgebaut wie die erstgenannte Diode, wobei deren obere Metallisierung 15 für ihre Diodenkontakte ebenfalls eine Aussparung 14 aufweii, während die Metallisierung 16 für ihre Rückseitenkontakte durchgehend ist. Die von der Diode 3 ausgesendete Wellenlänge ist mit 1 und die von der Diode 2 ausgesendete Wellenlänge ist mit 2 bezeichnet. k1 ist dabei größer als A2. Die Anord-2 1 nung ist somit so ausgebildet, daß die von der Diode 3 ausgehenden Wellenlängen die Diode 2 durchdringen können.Fig. 1 shows a schematic cross section through an inventive Built-up diode arrangement for use on the transmission side, i.e. for modulation of the signals to be sent. The wavy lines hy represent the direction of the beam of the optical signals. The two diodes 2 and 3 are on top of each other arranged. With 13 ifit the upper metallization for a connection contact the diode and with 6 the metallization for the other connection contact of the diode 2 designated. The lower metallization 6 is provided with a recess 1, see above that the radiation emanating from the diode 3 passes through this opening through the diode 2 can penetrate. The lower diode 3 is constructed in a manner similar to that the first-mentioned diode, its upper metallization 15 for its diode contacts also has a recess 14, while the metallization 16 for its rear-side contacts is continuous. The wavelength emitted by the diode 3 is 1 and the The wavelength emitted by the diode 2 is denoted by 2. k1 is larger as A2. The arrangement 2 1 voltage is thus designed so that those emanating from the diode 3 Wavelengths can penetrate the diode 2.

Bei der in der Fig. 2 dargestellten Anordnung mit den beiden übereinander angeordneten Dioden 4 und 5 handelt es sich um Empfangsdioden, die ankommende Signale demodulieren können. Die untere Metallisierung 7 des einen Diodenkontakts der Diode 4 ist dabei wieder mit einer Aussparung 8 versehen, durch welche Signale der Wellenlänge A1, für welche die Diode 4 durchlässig ist, zur Diode 5 gelangen können. Die Diode 4 ist für den Empfang bzw. die Demodulation von Signalen der Wellenlänge 2 dimensioniert.In the arrangement shown in FIG. 2 with the two on top of one another arranged diodes 4 and 5 are receiving diodes, the incoming signals can demodulate. The lower metallization 7 of one diode contact of the diode 4 is again provided with a recess 8 through which signals of the wavelength A1, for which the diode 4 is permeable, can reach the diode 5. The diode 4 is for the reception or the Demodulation of signals of the wavelength 2 dimensioned.

Die Wellenlänge A2 ist größer als die Wellenlänge 1 Die beiden übereinander angeordneten Empfangsdioden sind also so ausgebildet, daß die erste Diode 4 durchlässig ist für die von der zweiten Diode 5 zu empfangende Wellenlänge hl Damit man eine noch bessere Entkopplung zwischen den beiden übereinander angeordneten Dioden erhält, können für die kürzeren Wellenlängen absorbierende oder reflektierende Schichten 9 bzw. 12 zwischen den beiden Dioden angeordnet wr den.The wavelength A2 is greater than the wavelength 1 The two on top of each other arranged receiving diodes are so designed that the first diode 4 is permeable is for the wavelength to be received by the second diode 5 hl So that one gets even better decoupling between the two diodes arranged one above the other, can use absorbent or reflective layers for the shorter wavelengths 9 and 12, respectively, are arranged between the two diodes.

Die Dioden können aus verschiedenen Materialien aufgebaut sein oder auch aus gleichem Material mit unterschiedlicher Konzentration hergestellt werden. Besonders vorteilhaft ist es, wenn die Dioden nicht aus getrennten Diodenstrukturen aufgebaut sind, wie dies in den Figuren 1 und 2 dargestellt wurde, sondern, wenn die dicht benachbart angeordneten Dioden in einem Epitaxieprozeß direkt übereinander hergestellt werden. Dies ist in der Fig. 3, für zwei Dioden 10 und 11, schematisch dargestellt.The diodes can be constructed from different materials or can also be made from the same material with different concentrations. It is particularly advantageous if the diodes are not made up of separate diode structures are constructed as shown in Figures 1 and 2, but if the closely spaced diodes in an epitaxial process directly on top of each other getting produced. This is shown schematically in FIG. 3 for two diodes 10 and 11 shown.

Eine erfindungsgemäß aufgebaute Doppeldiode kann somit in einfache Weise ohne zusätzliche Filter- und Kopplenchaltungen in eine optische Nachrichtenübertragungsstrecke eingefügt werden. Beispielsweise ist dies möglich, durch direkte Integration der Doppeldiode in den Stecker der Lichtleitfaser.A double diode constructed according to the invention can thus be converted into a simple Way without additional filter and coupling circuits in an optical communication link inserted will. This is possible, for example, through direct integration of the double diode into the connector of the optical fiber.

L e e r s e i t eL e r s e i t e

Claims (4)

Patentansprüche li. Anordnung zum gleichzeitigen Modulieren oder Demodulieren über eine optische Nachrichtenstrecke, insbesondere bei einer Lichtleitfaserstrecke, von Signalen sehr unterschiedlicher Wellenlänge, dadurch gekennzeichnet, daß zwei Sende- oder Empfangsdioden derart übereinandergelegt sind, daß in Strahlrichtung gesehen im Falle der Modulation die zweite Diode (2) für die von der ersten Diode (3) abgegebenen Wellenlängen und im Falle der Demodulation die erste Diode (4) für die von der zweiten Diode (5) zu empfangenden Wellenlängen durchlässig ausgebildet sind. Claims li. Arrangement for simultaneous modulation or Demodulating over an optical communication link, especially in the case of an optical fiber link, of signals of very different wavelengths, characterized in that two Transmitting or receiving diodes are superimposed in such a way that in the direction of the beam seen in the case of modulation the second diode (2) for that of the first diode (3) emitted wavelengths and in the case of demodulation the first diode (4) for the wavelengths to be received by the second diode (5) are made transparent are. 2. Anordnung nach Anspruch 1, dadurch gekennzeichnet, daß zwischen den beiden (2, 3 bzw. 4, 5) Dioden eine die kürzeren Wellenlängen absorbierende oder reflektierende Schicht (9, 12) angebracht ist.2. Arrangement according to claim 1, characterized in that between the two (2, 3 or 4, 5) diodes one absorbs the shorter wavelengths or reflective layer (9, 12) is attached. 3. Anordnung nach einem der vorhergehenden Ansprüche, dadurch gekennzèichnet, daß die beiden Dioden (2, 3 bzw.3. Arrangement according to one of the preceding claims, characterized thereby, that the two diodes (2, 3 or 4, 5) in einem Epitaxieprozeß direkt übereinander als Einheit hergestellt sind. 4, 5) in an epitaxy process directly one above the other as a unit are. 4. Anordnung nach einem der vorhergehenden AnsprUche, dadurch gekennzeichnet, daß die beiden Dioden in den Stecker einer Lichtleitfaser integriert sind.4. Arrangement according to one of the preceding claims, characterized in that that the two diodes are integrated into the connector of an optical fiber.
DE2629356A 1976-06-30 1976-06-30 Electro-optical converter for sending or receiving Expired DE2629356C2 (en)

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DE2629356A1 true DE2629356A1 (en) 1978-01-05
DE2629356C2 DE2629356C2 (en) 1983-07-21

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Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2431771A1 (en) * 1978-07-21 1980-02-15 Sumitomo Electric Industries MULTIPLE PHOTODIODES
EP0012585A1 (en) * 1978-12-14 1980-06-25 Western Electric Company, Incorporated A semiconductor optical device
FR2483608A1 (en) * 1980-05-28 1981-12-04 Lignes Telegraph Telephon Demultiplexer for light signals with different wavelengths - has photodetectors on upper and lower side of transparent support plate, which selectively absorb desired wavelength
DE3025492A1 (en) * 1980-07-04 1982-02-04 Siemens AG, 1000 Berlin und 8000 München FILTER ELEMENT FOR OPTICAL MESSAGE TECHNOLOGY
DE3046140A1 (en) * 1980-12-06 1982-07-15 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt "SIGNAL TRANSFER METHOD, A SEMICONDUCTOR COMPONENT AND AN ELECTRO-OPTICAL COMPONENT FOR CARRYING OUT THE PROCESS"
DE3109887A1 (en) * 1981-03-14 1982-09-23 Kabelwerke Reinshagen Gmbh, 5600 Wuppertal Optical two-way intercom system
DE3311038A1 (en) * 1983-03-25 1984-09-27 Siemens AG, 1000 Berlin und 8000 München OPTICAL TRANSMITTER AND RECEIVER DEVICE
DE3609278A1 (en) * 1986-03-19 1987-09-24 Siemens Ag INTEGRATED OPTICAL SEMICONDUCTOR ARRANGEMENT
DE3613666A1 (en) * 1986-04-23 1987-10-29 Bks Gmbh METHOD FOR BIDIRECTIONAL DATA TRANSFER AND ELECTRONIC LOCKING SYSTEM WORKING AFTER THIS
EP0483868A2 (en) * 1990-11-02 1992-05-06 Norikatsu Yamauchi Semiconductor device having reflecting layer
DE4033776A1 (en) * 1990-10-24 1992-05-07 Ant Nachrichtentech ARRANGEMENT FOR OPTICAL MESSAGE TRANSMISSION BETWEEN SATELLITES
WO1996033516A1 (en) * 1995-04-18 1996-10-24 Cambridge Display Technology Limited Organic light-emitting devices
EP0756185A2 (en) * 1995-07-26 1997-01-29 Sumitomo Electric Industries, Ltd. PD/LD module and PD module
EP0773591A3 (en) * 1995-11-13 1998-09-16 Sumitomo Electric Industries, Ltd. Light emitting/detecting module
EP0903791A2 (en) * 1997-06-28 1999-03-24 Vishay Semiconductor GmbH Apparatus for optical transmission of data
DE19823213A1 (en) * 1998-05-25 1999-12-09 Siemens Ag Bi-directional optical transmitter and receiver
DE19834090A1 (en) * 1998-07-29 2000-02-03 Heidenhain Gmbh Dr Johannes Optoelectronic transmitter and receiver unit
US6633120B2 (en) 1998-11-19 2003-10-14 Unisplay S.A. LED lamps

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DE10064599A1 (en) * 2000-12-18 2002-07-04 Infineon Technologies Ag Sender receiver for bidirectional optical news and signal transmission has blocking filter to clearly separate send and receive signals

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US3952265A (en) * 1974-10-29 1976-04-20 Hughes Aircraft Company Monolithic dual mode emitter-detector terminal for optical waveguide transmission lines

Patent Citations (1)

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Publication number Priority date Publication date Assignee Title
US3952265A (en) * 1974-10-29 1976-04-20 Hughes Aircraft Company Monolithic dual mode emitter-detector terminal for optical waveguide transmission lines

Non-Patent Citations (2)

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Title
Inspec, Patent Associated Literature R 113-F 502-P, 1974, betreffend: Revue Technique Thomson-CSF, Vol. 6, No. 4, Dec. 1974, Seiten 861 bis 884 *
Unger, Hans-Georg, Optische Nachrichtentechnik, Berlin 1976, Elitera-Verlag, S. 8, 68,69,83 *

Cited By (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2431771A1 (en) * 1978-07-21 1980-02-15 Sumitomo Electric Industries MULTIPLE PHOTODIODES
EP0012585A1 (en) * 1978-12-14 1980-06-25 Western Electric Company, Incorporated A semiconductor optical device
FR2483608A1 (en) * 1980-05-28 1981-12-04 Lignes Telegraph Telephon Demultiplexer for light signals with different wavelengths - has photodetectors on upper and lower side of transparent support plate, which selectively absorb desired wavelength
DE3025492A1 (en) * 1980-07-04 1982-02-04 Siemens AG, 1000 Berlin und 8000 München FILTER ELEMENT FOR OPTICAL MESSAGE TECHNOLOGY
DE3046140A1 (en) * 1980-12-06 1982-07-15 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt "SIGNAL TRANSFER METHOD, A SEMICONDUCTOR COMPONENT AND AN ELECTRO-OPTICAL COMPONENT FOR CARRYING OUT THE PROCESS"
DE3109887A1 (en) * 1981-03-14 1982-09-23 Kabelwerke Reinshagen Gmbh, 5600 Wuppertal Optical two-way intercom system
DE3311038A1 (en) * 1983-03-25 1984-09-27 Siemens AG, 1000 Berlin und 8000 München OPTICAL TRANSMITTER AND RECEIVER DEVICE
DE3609278A1 (en) * 1986-03-19 1987-09-24 Siemens Ag INTEGRATED OPTICAL SEMICONDUCTOR ARRANGEMENT
DE3613666A1 (en) * 1986-04-23 1987-10-29 Bks Gmbh METHOD FOR BIDIRECTIONAL DATA TRANSFER AND ELECTRONIC LOCKING SYSTEM WORKING AFTER THIS
DE4033776A1 (en) * 1990-10-24 1992-05-07 Ant Nachrichtentech ARRANGEMENT FOR OPTICAL MESSAGE TRANSMISSION BETWEEN SATELLITES
EP0483868B1 (en) * 1990-11-02 1997-01-22 Norikatsu Yamauchi Semiconductor device having reflecting layer
EP0724300A3 (en) * 1990-11-02 1996-12-27 Norikatsu Yamauchi Semiconductor device having reflecting layer
EP0483868A2 (en) * 1990-11-02 1992-05-06 Norikatsu Yamauchi Semiconductor device having reflecting layer
EP0724300A2 (en) * 1990-11-02 1996-07-31 Norikatsu Yamauchi Semiconductor device having reflecting layer
US5929562A (en) * 1995-04-18 1999-07-27 Cambridge Display Technology Limited Organic light-emitting devices
WO1996033516A1 (en) * 1995-04-18 1996-10-24 Cambridge Display Technology Limited Organic light-emitting devices
EP0756185A2 (en) * 1995-07-26 1997-01-29 Sumitomo Electric Industries, Ltd. PD/LD module and PD module
EP0756185A3 (en) * 1995-07-26 1998-09-23 Sumitomo Electric Industries, Ltd. PD/LD module and PD module
EP0773591A3 (en) * 1995-11-13 1998-09-16 Sumitomo Electric Industries, Ltd. Light emitting/detecting module
EP0903791A2 (en) * 1997-06-28 1999-03-24 Vishay Semiconductor GmbH Apparatus for optical transmission of data
EP0903791A3 (en) * 1997-06-28 1999-12-22 Vishay Semiconductor GmbH Apparatus for optical transmission of data
US6320686B1 (en) 1997-06-28 2001-11-20 Vishay Semiconductor Gmbh Component for optical data transmission
DE19823213A1 (en) * 1998-05-25 1999-12-09 Siemens Ag Bi-directional optical transmitter and receiver
DE19823213C2 (en) * 1998-05-25 2002-02-21 Infineon Technologies Ag Bi-directional optical transmitter and receiver
US6580533B1 (en) 1998-05-25 2003-06-17 Infineon Technologies Ag Two-way optical transmission and reception device
DE19834090A1 (en) * 1998-07-29 2000-02-03 Heidenhain Gmbh Dr Johannes Optoelectronic transmitter and receiver unit
US7058309B1 (en) 1998-07-29 2006-06-06 Dr. Johannes Heidenhain Gmbh Optoelectronic transceiver
EP1101136B1 (en) * 1998-07-29 2007-06-27 Dr. Johannes Heidenhain GmbH Optoelectronic transceiver
US6633120B2 (en) 1998-11-19 2003-10-14 Unisplay S.A. LED lamps

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