DE2861977D1 - Method and apparatus for depositing semiconductor and other films - Google Patents
Method and apparatus for depositing semiconductor and other filmsInfo
- Publication number
- DE2861977D1 DE2861977D1 DE7878300737T DE2861977T DE2861977D1 DE 2861977 D1 DE2861977 D1 DE 2861977D1 DE 7878300737 T DE7878300737 T DE 7878300737T DE 2861977 T DE2861977 T DE 2861977T DE 2861977 D1 DE2861977 D1 DE 2861977D1
- Authority
- DE
- Germany
- Prior art keywords
- films
- depositing semiconductor
- depositing
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000151 deposition Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/074—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a heterojunction with an element of Group IV of the Periodic System, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/503—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using dc or ac discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/857,690 US4226897A (en) | 1977-12-05 | 1977-12-05 | Method of forming semiconducting materials and barriers |
Publications (1)
Publication Number | Publication Date |
---|---|
DE2861977D1 true DE2861977D1 (en) | 1982-09-16 |
Family
ID=25326532
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE7878300737T Expired DE2861977D1 (en) | 1977-12-05 | 1978-12-05 | Method and apparatus for depositing semiconductor and other films |
Country Status (6)
Country | Link |
---|---|
US (2) | US4226897A (de) |
EP (1) | EP0002383B1 (de) |
JP (1) | JPS5491048A (de) |
AU (1) | AU524505B2 (de) |
DE (1) | DE2861977D1 (de) |
ZA (1) | ZA786772B (de) |
Families Citing this family (91)
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US4484809B1 (en) * | 1977-12-05 | 1995-04-18 | Plasma Physics Corp | Glow discharge method and apparatus and photoreceptor devices made therewith |
US5187115A (en) * | 1977-12-05 | 1993-02-16 | Plasma Physics Corp. | Method of forming semiconducting materials and barriers using a dual enclosure apparatus |
US4265991A (en) * | 1977-12-22 | 1981-05-05 | Canon Kabushiki Kaisha | Electrophotographic photosensitive member and process for production thereof |
US4471042A (en) * | 1978-05-04 | 1984-09-11 | Canon Kabushiki Kaisha | Image-forming member for electrophotography comprising hydrogenated amorphous matrix of silicon and/or germanium |
US4565731A (en) * | 1978-05-04 | 1986-01-21 | Canon Kabushiki Kaisha | Image-forming member for electrophotography |
JPS54160568A (en) * | 1978-06-09 | 1979-12-19 | Anelva Corp | Thin film forming equipment for discharge chemical reaction |
DE2941559C2 (de) * | 1979-10-13 | 1983-03-03 | Messerschmitt-Bölkow-Blohm GmbH, 8000 München | Verfahren zum Abscheiden von Silizium auf einem Substrat |
JPS56105627A (en) * | 1980-01-28 | 1981-08-22 | Fuji Photo Film Co Ltd | Manufacture of amorphous semiconductor |
US4410558A (en) * | 1980-05-19 | 1983-10-18 | Energy Conversion Devices, Inc. | Continuous amorphous solar cell production system |
JPS5710920A (en) * | 1980-06-23 | 1982-01-20 | Canon Inc | Film forming process |
US5545503A (en) * | 1980-06-25 | 1996-08-13 | Semiconductor Energy Laboratory Co., Ltd. | Method of making printing member for electrostatic photocopying |
US4557987A (en) * | 1980-12-23 | 1985-12-10 | Canon Kabushiki Kaisha | Photoconductive member having barrier layer and amorphous silicon charge generation and charge transport layers |
DE3200376A1 (de) * | 1981-01-09 | 1982-11-04 | Canon K.K., Tokyo | Fotoleitfaehiges element |
US4441113A (en) * | 1981-02-13 | 1984-04-03 | Energy Conversion Devices, Inc. | P-Type semiconductor material having a wide band gap |
JPS57186321A (en) * | 1981-05-12 | 1982-11-16 | Fuji Electric Corp Res & Dev Ltd | Producing method for amorphous silicon film |
US4488506A (en) * | 1981-06-18 | 1984-12-18 | Itt Industries, Inc. | Metallization plant |
US4378460A (en) * | 1981-08-31 | 1983-03-29 | Rca Corporation | Metal electrode for amorphous silicon solar cells |
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JPH07105507B2 (ja) * | 1982-02-25 | 1995-11-13 | プラズマ・フィジクス・コ−ポレ−ション | 光起電力装置 |
US4454835A (en) * | 1982-09-13 | 1984-06-19 | The United States Of America As Represented By The Secretary Of The Navy | Internal photolysis reactor |
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NL8204056A (nl) * | 1982-10-21 | 1984-05-16 | Oce Nederland Bv | Fotogeleidend element voor toepassing in elektrofotografische kopieerprocessen. |
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US6784033B1 (en) | 1984-02-15 | 2004-08-31 | Semiconductor Energy Laboratory Co., Ltd. | Method for the manufacture of an insulated gate field effect semiconductor device |
US5780313A (en) | 1985-02-14 | 1998-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating semiconductor device |
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JPS61270816A (ja) * | 1985-05-24 | 1986-12-01 | Mitsubishi Chem Ind Ltd | グロ−放電法およびその装置 |
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US5324365A (en) | 1991-09-24 | 1994-06-28 | Canon Kabushiki Kaisha | Solar cell |
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CN102479833A (zh) * | 2010-11-24 | 2012-05-30 | 吉富新能源科技(上海)有限公司 | 穿透光可调整的高光电转换效率太阳能电池 |
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KR102342098B1 (ko) * | 2013-06-10 | 2021-12-21 | 카티바, 인크. | 저-입자 가스 인클로저 시스템 및 방법 |
TWI496304B (zh) * | 2013-12-12 | 2015-08-11 | Ind Tech Res Inst | 太陽能電池與其形成方法及n型ZnS層的形成方法 |
KR101970449B1 (ko) | 2013-12-26 | 2019-04-18 | 카티바, 인크. | 전자 장치의 열 처리를 위한 장치 및 기술 |
KR102307190B1 (ko) | 2014-01-21 | 2021-09-30 | 카티바, 인크. | 전자 장치 인캡슐레이션을 위한 기기 및 기술 |
US9343678B2 (en) | 2014-01-21 | 2016-05-17 | Kateeva, Inc. | Apparatus and techniques for electronic device encapsulation |
EP3138123B1 (de) | 2014-04-30 | 2021-06-02 | Kateeva, Inc. | Gaspolstervorrichtung und techniken zur substratbeschichtung |
CN107075767B (zh) | 2014-11-26 | 2021-09-03 | 科迪华公司 | 环境受控的涂层系统 |
Family Cites Families (21)
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CH389776A (de) * | 1958-12-02 | 1965-03-31 | Radiation Res Corp | Verfahren zur Herstellung eines Bauelementes mit einem einen Überzug aufweisenden Körper |
FR1438826A (fr) * | 1964-06-30 | 1966-05-13 | Ibm | Formation de films de verre par pulvérisation réactive |
US3419487A (en) * | 1966-01-24 | 1968-12-31 | Dow Corning | Method of growing thin film semiconductors using an electron beam |
US3437511A (en) * | 1966-04-07 | 1969-04-08 | Us Air Force | Metal surfaced with boron and coating of silicon,silicon carbide or titanium nitride |
FR1493110A (fr) * | 1966-07-16 | 1967-08-25 | Radiotechnique Coprim Rtc | Procédé de dépôt de couches minces sur un substrat par la voie d'une décharge électrique luminescente et appareillage pour la mise en oeuvre de ce procédé |
US3594238A (en) * | 1968-08-15 | 1971-07-20 | United States Steel Corp | Method for treating aluminum surfaces to prevent discoloration |
US3655438A (en) * | 1969-10-20 | 1972-04-11 | Int Standard Electric Corp | Method of forming silicon oxide coatings in an electric discharge |
JPS5143823Y2 (de) * | 1971-05-24 | 1976-10-23 | ||
US3739220A (en) * | 1972-05-08 | 1973-06-12 | Gen Electric | Workpiece support for glow discharge apparatus |
US4064521A (en) * | 1975-07-28 | 1977-12-20 | Rca Corporation | Semiconductor device having a body of amorphous silicon |
DE2538300B2 (de) * | 1975-08-28 | 1977-06-30 | Dornier System Gmbh, 7990 Friedrichshafen | Verfahren zur herstellung einer solarabsorberschicht |
US4059461A (en) * | 1975-12-10 | 1977-11-22 | Massachusetts Institute Of Technology | Method for improving the crystallinity of semiconductor films by laser beam scanning and the products thereof |
US4033287A (en) * | 1976-01-22 | 1977-07-05 | Bell Telephone Laboratories, Incorporated | Radial flow reactor including glow discharge limiting shield |
US4142195A (en) * | 1976-03-22 | 1979-02-27 | Rca Corporation | Schottky barrier semiconductor device and method of making same |
US4069492A (en) * | 1976-08-23 | 1978-01-17 | Rca Corporation | Electroluminescent semiconductor device having a body of amorphous silicon |
US4196438A (en) * | 1976-09-29 | 1980-04-01 | Rca Corporation | Article and device having an amorphous silicon containing a halogen and method of fabrication |
US4251229A (en) * | 1977-10-03 | 1981-02-17 | Dai-Ichi Kogyo Seiyaku Co., Ltd. | Stabilized fuel slurry |
US4162505A (en) * | 1978-04-24 | 1979-07-24 | Rca Corporation | Inverted amorphous silicon solar cell utilizing cermet layers |
US4202928A (en) * | 1978-07-24 | 1980-05-13 | Rca Corporation | Updateable optical storage medium |
US4217148A (en) * | 1979-06-18 | 1980-08-12 | Rca Corporation | Compensated amorphous silicon solar cell |
US4266984A (en) * | 1979-12-03 | 1981-05-12 | Exxon Research And Engineering Company | Enhanced open circuit voltage in amorphous silicon photovoltaic devices |
-
1977
- 1977-12-05 US US05/857,690 patent/US4226897A/en not_active Expired - Lifetime
-
1978
- 1978-12-04 AU AU42165/78A patent/AU524505B2/en not_active Expired
- 1978-12-04 ZA ZA00786772A patent/ZA786772B/xx unknown
- 1978-12-05 DE DE7878300737T patent/DE2861977D1/de not_active Expired
- 1978-12-05 JP JP15046978A patent/JPS5491048A/ja active Granted
- 1978-12-05 EP EP78300737A patent/EP0002383B1/de not_active Expired
-
1980
- 1980-04-09 US US06138699 patent/US4330182B1/en not_active Expired - Lifetime
Also Published As
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US4330182A (en) | 1982-05-18 |
JPS5491048A (en) | 1979-07-19 |
US4226897A (en) | 1980-10-07 |
EP0002383A1 (de) | 1979-06-13 |
JPS6356699B2 (de) | 1988-11-09 |
ZA786772B (en) | 1979-11-28 |
US4330182B1 (en) | 1999-09-07 |
EP0002383B1 (de) | 1982-07-28 |
AU524505B2 (en) | 1982-09-23 |
AU4216578A (en) | 1979-06-14 |
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