DE29500745U1 - Multiformkristall und Gerät zu dessen Herstellung - Google Patents

Multiformkristall und Gerät zu dessen Herstellung

Info

Publication number
DE29500745U1
DE29500745U1 DE29500745U DE29500745U DE29500745U1 DE 29500745 U1 DE29500745 U1 DE 29500745U1 DE 29500745 U DE29500745 U DE 29500745U DE 29500745 U DE29500745 U DE 29500745U DE 29500745 U1 DE29500745 U1 DE 29500745U1
Authority
DE
Germany
Prior art keywords
production
multiform crystal
multiform
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE29500745U
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Northrop Grumman Corp
Original Assignee
TRW Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TRW Inc filed Critical TRW Inc
Publication of DE29500745U1 publication Critical patent/DE29500745U1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/14—Phosphates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/07—Construction or shape of active medium consisting of a plurality of parts, e.g. segments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/0602—Crystal lasers or glass lasers
    • H01S3/0612—Non-homogeneous structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
DE29500745U 1994-01-27 1995-01-18 Multiformkristall und Gerät zu dessen Herstellung Expired - Lifetime DE29500745U1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/190,347 US5394420A (en) 1994-01-27 1994-01-27 Multiform crystal and apparatus for fabrication

Publications (1)

Publication Number Publication Date
DE29500745U1 true DE29500745U1 (de) 1995-04-20

Family

ID=22700964

Family Applications (2)

Application Number Title Priority Date Filing Date
DE29500745U Expired - Lifetime DE29500745U1 (de) 1994-01-27 1995-01-18 Multiformkristall und Gerät zu dessen Herstellung
DE19501388A Withdrawn DE19501388A1 (de) 1994-01-27 1995-01-18 Multiformkristall und Gerät zu dessen Herstellung

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE19501388A Withdrawn DE19501388A1 (de) 1994-01-27 1995-01-18 Multiformkristall und Gerät zu dessen Herstellung

Country Status (3)

Country Link
US (2) US5394420A (de)
JP (1) JP3145885B2 (de)
DE (2) DE29500745U1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10025746A1 (de) * 2000-05-24 2001-12-06 Juergen H Werner Herstellung großflächiger Festkörpersubstrate zum Aufwachsen epitaktischer Festkörperschichten

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5852622A (en) * 1988-08-30 1998-12-22 Onyx Optics, Inc. Solid state lasers with composite crystal or glass components
USH1673H (en) * 1995-12-29 1997-08-05 Hanson; Frank E. Cooling device for solid state laser
US5675595A (en) * 1996-01-29 1997-10-07 Science And Technology Corporation Composite multiple wavelength laser material and multiple wavelength laser for use therewith
JPH09214024A (ja) * 1996-02-02 1997-08-15 Fanuc Ltd 固体レーザ発振装置
US5841805A (en) * 1997-01-14 1998-11-24 Trw Inc. Three-level laser system
US6036321A (en) * 1997-05-16 2000-03-14 Spectra Physics Lasers, Inc. Crystal isolation housing
US5936984A (en) * 1997-05-21 1999-08-10 Onxy Optics, Inc. Laser rods with undoped, flanged end-caps for end-pumped laser applications
JPH1187813A (ja) * 1997-09-12 1999-03-30 Toshiba Corp 固体レーザ発振器
JPH11100627A (ja) * 1997-09-25 1999-04-13 Ryuta Hirayama 巨大結晶粒を表面に析出させたチタン又はチタン合金 製品
JPH11312832A (ja) * 1998-04-28 1999-11-09 Fuji Photo Film Co Ltd 半導体レーザ励起固体レーザ
US6178040B1 (en) 1998-06-25 2001-01-23 Trw Inc. Laser with two orthogonal zig-zag slab gain media for optical phase distortion compensation
US6268956B1 (en) 1998-07-07 2001-07-31 Trw Inc. End pumped zig-zag slab laser gain medium
US6094297A (en) * 1998-07-07 2000-07-25 Trw Inc. End pumped zig-zag slab laser gain medium
JP2000034193A (ja) * 1998-07-16 2000-02-02 Nikon Corp フッ化物単結晶の熱処理方法及び製造方法
US6069730A (en) * 1998-08-14 2000-05-30 Trw Inc. Phase conjugated master oscillator-power amplifier breakdown control
US5991315A (en) * 1998-09-03 1999-11-23 Trw Inc. Optically controllable cooled saturable absorber Q-switch slab
US6160824A (en) * 1998-11-02 2000-12-12 Maxios Laser Corporation Laser-pumped compound waveguide lasers and amplifiers
WO2000072410A1 (en) * 1999-05-26 2000-11-30 Ii-Vi Incorporated Improved optical contacting method and apparatus
DE19936651A1 (de) 1999-08-04 2001-02-15 Forsch Mineralische Und Metall Verfahren und Herstellung eines segmentierten Kristalls
US6695912B2 (en) * 2000-04-24 2004-02-24 Bae Systems Information And Electronic Systems Integration Inc. Method for growing laser crystals
EP1316245A1 (de) * 2000-08-31 2003-06-04 Powerlase Limited Erzeugung elektromagnetischer strahlung aus einem lasererzeugten plasma
DE10133537C2 (de) 2001-07-11 2003-07-17 Infineon Technologies Ag Verfahren zur Herstellung einer nitridierten Oxidschicht auf einem Silizium-Halbleitersubstrat
DE10241984A1 (de) * 2002-09-11 2004-03-25 Tui Laser Ag Optisch gepumpter Festkörperlaser
US7630423B2 (en) * 2005-04-12 2009-12-08 Raytheon Company Glaze soldered laser components and method of manufacturing
CN102534807A (zh) * 2012-02-28 2012-07-04 常州天合光能有限公司 一种单晶棒对接装置及其对接方法
JP2015012142A (ja) * 2013-06-28 2015-01-19 京セラクリスタルデバイス株式会社 レーザ結晶
CN108155543B (zh) * 2018-01-30 2024-02-13 福州晶元光电科技有限公司 一种激光器晶体组件
CN111270314A (zh) * 2020-04-17 2020-06-12 中国电子科技南湖研究院 一种制备大尺寸单晶的方法

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3530568A (en) * 1969-04-24 1970-09-29 United Aircraft Corp Diffusion welding of the nickel-base superalloys
US3715194A (en) * 1970-10-29 1973-02-06 Union Carbide Corp Melt grown alumina crystals and process therefor
US3789498A (en) * 1971-11-01 1974-02-05 Ambac Ind Method of diffusion bonding
US3836632A (en) * 1972-07-28 1974-09-17 Hitachi Ltd Method for improving transparency of gadolinium molybdate single crystal
US4033792A (en) * 1974-12-23 1977-07-05 United Technologies Corporation Composite single crystal article
US4163200A (en) * 1977-07-11 1979-07-31 Demaggio John M Laser beam arrangement
US4256531A (en) * 1977-08-09 1981-03-17 National Institute For Researches In Inorganic Materials Process for producing single crystal of yttrium-iron garnet or solid solution thereof
US4402787A (en) * 1979-05-31 1983-09-06 Ngk Insulators, Ltd. Method for producing a single crystal
US4350528A (en) * 1980-06-12 1982-09-21 Trw Inc. Method for diffusion bonding workpieces and article fabricated by same
US4475980A (en) * 1982-06-01 1984-10-09 United Technologies Corporation Solid state production of multiple single crystal articles
US4509175A (en) * 1982-09-14 1985-04-02 Quantronix Corporation Segmented YAG laser rods and method of manufacture
US4507787A (en) * 1982-09-28 1985-03-26 Quantronix Corporation Segmented YAG laser rods and methods of manufacture
US4910746A (en) * 1984-06-14 1990-03-20 Peter Nicholson Multiple crystal pumping cavity laser with thermal and mechanical isolation
US4961818A (en) * 1985-06-21 1990-10-09 Inco Alloys International, Inc. Process for producing single crystals
US4900394A (en) * 1985-08-22 1990-02-13 Inco Alloys International, Inc. Process for producing single crystals
JPS6311591A (ja) * 1986-07-01 1988-01-19 Matsushita Electric Ind Co Ltd 単結晶セラミクスの製造方法
SU1592414A1 (ru) * 1986-11-26 1990-09-15 Vni Pk T I Elektrotermicheskog Cпocoб bыpaщиbahия пpoфилиpobahhыx kpиctaллob tугoплabkиx coeдиhehий и уctpoйctbo для eгo ocущectbлehия
US5265116A (en) * 1988-02-02 1993-11-23 Massachusetts Institute Of Technology Microchip laser
WO1989008158A1 (en) * 1988-02-24 1989-09-08 Nippon Mining Co., Ltd. Single crystal of compound semiconductor, process for its production and semiconductor device manufactured by using same
DE3808875A1 (de) * 1988-03-17 1989-09-28 Standard Elektrik Lorenz Ag Halbleiteranordnung zur erzeugung einer periodischen brechungsindexverteilung und/oder periodischen verstaerkungsverteilung
US5209811A (en) * 1988-03-25 1993-05-11 Shin-Etsu Handotai Company Limited Of Japan Method for heat-treating gallium arsenide monocrystals
JP2505542B2 (ja) * 1988-07-28 1996-06-12 日本碍子株式会社 光学素子および光磁界検出センサ
JPH02153849A (ja) * 1988-08-30 1990-06-13 Hoya Opt Inc ガラス含有物質およびガラス非含有物質から構成される複合体およびその形成方法
JPH0653639B2 (ja) * 1988-10-31 1994-07-20 株式会社ジャパンエナジー 化合物半導体単結晶の製造方法
US5187714A (en) * 1990-10-19 1993-02-16 Fuji Photo Film Co., Ltd. Laser-diode-pumped solid-state laser
GB2250941B (en) * 1990-12-20 1994-02-02 Rolls Royce Plc Improvements in or relating to diffusion bonding
JPH04233290A (ja) * 1990-12-28 1992-08-21 Hoya Corp 固体レーザ装置
JPH04345078A (ja) * 1991-05-22 1992-12-01 Sony Corp レーザ光発生装置
JPH05129680A (ja) * 1991-11-01 1993-05-25 Hiroaki Aoshima 合成単結晶体を結合した固体レーザの製造方法
US5207864A (en) * 1991-12-30 1993-05-04 Bell Communications Research Low-temperature fusion of dissimilar semiconductors
US5321711A (en) * 1992-08-17 1994-06-14 Alliedsignal Inc. Segmented solid state laser gain media with gradient doping level
US5390210A (en) * 1993-11-22 1995-02-14 Hewlett-Packard Company Semiconductor laser that generates second harmonic light with attached nonlinear crystal

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10025746A1 (de) * 2000-05-24 2001-12-06 Juergen H Werner Herstellung großflächiger Festkörpersubstrate zum Aufwachsen epitaktischer Festkörperschichten

Also Published As

Publication number Publication date
US5548606A (en) 1996-08-20
JP3145885B2 (ja) 2001-03-12
DE19501388A1 (de) 1995-08-03
US5394420A (en) 1995-02-28
JPH07288352A (ja) 1995-10-31

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Legal Events

Date Code Title Description
R207 Utility model specification

Effective date: 19950601

R150 Utility model maintained after payment of first maintenance fee after three years

Effective date: 19980304

R151 Utility model maintained after payment of second maintenance fee after six years

Effective date: 20010222

R152 Utility model maintained after payment of third maintenance fee after eight years

Effective date: 20030225

R081 Change of applicant/patentee

Owner name: NORTHROP GRUMMAN CORP., LOS ANGELES, US

Free format text: FORMER OWNER: TRW INC., REDONDO BEACH, CALIF., US

Effective date: 20031001

R071 Expiry of right