DE29724670U1 - Lichtemittierende Vorrichtung und Diode - Google Patents

Lichtemittierende Vorrichtung und Diode

Info

Publication number
DE29724670U1
DE29724670U1 DE1997224670 DE29724670U DE29724670U1 DE 29724670 U1 DE29724670 U1 DE 29724670U1 DE 1997224670 DE1997224670 DE 1997224670 DE 29724670 U DE29724670 U DE 29724670U DE 29724670 U1 DE29724670 U1 DE 29724670U1
Authority
DE
Germany
Prior art keywords
light
phosphor
emitting device
light emitting
fluorescent material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE1997224670
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
Original Assignee
Nichia Chemical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=27524906&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE29724670(U1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Nichia Chemical Industries Ltd filed Critical Nichia Chemical Industries Ltd
Publication of DE29724670U1 publication Critical patent/DE29724670U1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
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    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
    • C09K11/7767—Chalcogenides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
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    • C09K11/7774—Aluminates
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    • G02B6/0013—Means for improving the coupling-in of light from the light source into the light guide
    • G02B6/0023—Means for improving the coupling-in of light from the light source into the light guide provided by one optical element, or plurality thereof, placed between the light guide and the light source, or around the light source
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    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
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    • H—ELECTRICITY
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Description

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Claims (36)

1. Lichtemittierende Vorrichtung, umfassend eine lichtemittierende Komponente und einen Leuchtstoff, der in der Lage ist, einen Teil des von der lichtemittierenden Komponente ausgesandten Lichts zu absorbieren und Licht einer anderen Wellenlänge als der des absorbierten Lichtes auszusenden, wobei die lichtemittierende Komponente einen Halbleiter aus einer Nitridverbindung umfasst, und der Leuchtstoff ein Granatfluoreszenzmaterial enthält, das mindestens ein Element ausgewählt aus der Gruppe bestehend aus Y, Lu, Se, La, Gd und Sm und mindestens ein Element ausgewählt aus der Gruppe bestehend aus Al, Ga und In umfasst und mit Cerium aktiviert ist.
2. Lichtemittierende Vorrichtung nach Anspruch 1, in der der verwendete Leuchtstoff ein Yttrium-Aluminium-Granatfluoreszenzmaterial enthält, das Y und Al enthält.
3. Lichtemittierende Vorrichtung nach Anspruch 1, in der der Leuchtstoff ein Fluoreszenzmaterial der allgemeinen Formel (Re1-rSmr)3(Al1-sGas)5O12:Ce sein kann, wobei 0 ≦ r < 1 und 0 ≦ s ≦ 1 und Re mindestens ein Material ausgewählt aus Y und Gd ist.
4. Lichtemittierende Vorrichtung nach Anspruch 3, in der der Leuchtstoff ein Fluoreszenzmaterial der allgemeinen Formel (Y1-p-q-rGdpCeqSmr)3(Al1-sGas)5O12 enthält, in der 0 ≦ p ≦ 0,8, 0,003 ≦ q ≦ 0,2, 0,0003 ≦ r ≦ 0,08 und 0 ≦ s ≦ 1.
5. Lichtemittierende Vorrichtung nach Anspruch 2, in der der Leuchtstoff zwei oder mehr mit Cerium aktivierte Yttrium-Aluminium-Granatfluoreszenzmaterialien unterschiedlicher Zusammensetzung, darunter Y und Al, enthalten kann.
6. Lichtemittierende Vorrichtung nach Anspruch 3, in der der Leuchtstoff zwei oder mehr Fluoreszenzmaterialien unterschiedlicher Zusammensetzung der allgemeinen Formel (Re1-rSmr)3(Al1-sGas)5O12:Ce enthält, wobei 0 ≦ r < 1 und 0 ≦ s ≦ 1 und Re mindestens ein Material ausgewählt aus Y und Gd ist.
7. Lichtemittierende Vorrichtung nach Anspruch 1, in der der Leuchtstoff ein erstes Fluoreszenzmaterial der allgemeinen Formel Y3(Al1-sGas)5O12:Ce und ein zweites Fluoreszenzmaterial der allgemeinen Formel Re3Al5O12:Ce enthalten kann, in der 0 ≦ s ≦ 1 und Re mindestens ein Material ausgewählt aus Y, Gd und La ist.
8. Lichtemittierende Vorrichtung nach Anspruch 2, in der der Leuchtstoff ein Yttrium- Aluminium-Granat-Fluoreszenzmaterial sein kann, das ein erstes Fluoreszenzmaterial und ein zweites Fluoreszenzmaterial enthält, wobei jeweils unterschiedliche Teile des Yttriums in dem ersten und zweiten Fluoreszenzmaterial mit Gadolinium substituiert sind.
9. Lichtemittierende Vorrichtung nach Anspruch 1, in der der Hauptemissionspeak der lichtemittierenden Komponente in den Bereich von 400 nm bis 530 nm gelegt ist und die Hauptemissionswellenlänge des Leuchtstoffs länger eingestellt ist als der Hauptemissionspeak der lichtemittierenden Komponente.
10. Lichtemittierende Vorrichtung nach Anspruch 9, in der die lichtemittierende Schicht der lichtemittierenden Komponente einen Halbleiter aus In enthaltendem Galliumnitrid enthält, und der Leuchtstoff ein Yttrium-Aluminium-Granat-Fluoreszenzmaterial ist, wobei ein Teil von Al in dem Yttrium-Aluminium-Granat-Fluoreszenzmaterial mit Ga substituiert ist, so daß das Verhältnis von Ga : Al im Bereich von 1 : 1 bis 4 : 6 liegt und ein Teil von Y mit Gd substituiert ist, so daß das Verhältnis von Y : Gd im Bereich von 4 : 1 bis 2 : 3 liegt.
11. Lichtemittierende Vorrichtung gemäß Anspruch 1, umfassend eine im wesentlichen rechtwinklige Lichtleitplatte, die mit einer lichtemittierenden Komponente ausgestattet ist, welche auf einer ihrer Seitenflächen mittels des Leuchtstoffes aufgebracht ist und bis auf eine Hauptfläche im wesentlichen mit einem reflektierenden Material bedeckt ist, wobei das von der lichtemittierenden Komponente ausgesandte Licht durch den Leuchtstoff und die Lichtleitplatte in planares Licht umgewandelt wird, das von der Hauptfläche der Lichtleitplatte austritt.
12. Lichtemittierende Vorrichtung gemäß Anspruch 1, umfassend eine im wesentlichen rechtwinklige Lichtleitplatte, die mit einer auf einer ihrer Seitenflächen aufgebrachten lichtemittierenden Komponente ausgestattet ist, und auf einer ihrer Hauptflächen einen Leuchtstoff trägt und bis auf eine Hauptfläche im wesentlichen mit einem reflektierenden Material bedeckt ist, wobei das von der lichtemittierenden Komponente ausgesandte Licht durch die Lichtleitplatte und den Leuchtstoff in planares Licht umgewandelt wird, das von der Hauptfläche der Lichtleitplatte austritt.
13. LED-Anzeigevorrichtung, die die lichtemittierenden Vorrichtungen gemäß Anspruch 1 bis 10, die in Matrixform angeordnet sind, und einen Steuerkreis umfasst, der die LED- Anzeigevorrichtung gemäß den Anzeigedaten, die ihm eingegeben werden, ansteuert.
14. Lichtemittierende Diode umfassend:
einen äußeren Anschluss, der eine Kugelschale und einen inneren Anschluss aufweist
einen in der Kugelschale des äußeren Anschlusses aufgebrachten LED-Chip, wobei
eine der Elektroden mit dem äußeren Anschluss elektrisch verbunden ist;
ein transparentes Überzugsmaterial, mit dem die Kugelschale befüllt ist, so dass der LED-Chip bedeckt ist; und
eine lichtemittierende Diode mit einem Gussmaterial, das den mit dem Überzugsmaterial bedeckten LED-Chip einschließlich der Kugelschale des äußeren Anschlusses, des inneren Anschlusses und einer weiteren Elektrode des LED-Chips bedeckt, wobei
der LED-Chip ein Halbleiter aus einer Nitridverbindung ist und das Überzugsmaterial mindestens ein Element ausgewählt aus der Gruppe bestehend aus Y, Lu, Sc, La, Gd und Sm, mindestens ein Element ausgewählt aus der Gruppe bestehend aus Al, Ga und In und einen aus mit Cerium aktivierten Granat Fluoreszenzmaterial hergestellten Leuchtstoff enthält.
15. Lichtemittierende Diode nach Anspruch 14, in der der verwendete Leuchtstoff ein Yttrium-Aluminium-Granat-Fluoreszenzmaterial enthält, das Y und Al enthält.
16. Lichtemittierende Diode nach Anspruch 14, in der der Leuchtstoff ein Fluoreszenzmaterial der allgemeinen Formel (Re1-rSmr)3(Al1-sGas)5O12:Ce sein kann, wobei 0 ≦ r < 1 und 0 ≦ s ≦ 1 und Re mindestens ein Material ausgewählt aus Y und Gd ist.
17. Lichtemittierende Diode nach Anspruch 14, in der das Fluoreszenzmaterial durch die allgemeine Formel (Y1-p-q-rGdpCeqSmr)3(Al11-sGas)5O12 dargestellt ist, in der 0 ≦ p ≦ 0,8, 0,003 ≦ q ≦ 0,2, 0,0003 ≦ r ≦ 0,08 und 0 ≦ s ≦ 1.
18. Lichtemittierende Diode nach Anspruch 15, in der der Leuchtstoff zwei oder mehr durch Cerium aktivierte Yttrium-Aluminium-Granat-Fluoreszenzmaterialien unterschiedlicher Zusammensetzung, darunter Y und Al, enthält.
19. Lichtemittierende Diode nach Anspruch 16, in der der Leuchtstoff zwei oder mehr Fluoreszenzmaterialien unterschiedlicher Zusammensetzung der allgemeinen Formel (Re1-rSmr)3(Al1-sGas)5O12:Ce enthält, wobei 0 ≦ r < 1 und 0 ≦ s ≦ 1 und Re mindestens ein Material ausgewählt aus Y und Gd ist.
20. Lichtemittierende Diode nach Anspruch 14, in der der Leuchtstoff ein erstes Fluoreszenzmaterial der allgemeinen Formel Y3(Al1-sGas)5O12:Ce und ein zweites Fluoreszenzmaterial der allgemeinen Formel Re3Al5O12:Ce enthält, in der 0 ≦ s ≦ 1 und Re mindestens ein Material ausgewählt aus Y, Gd und La ist.
21. Lichtemittierende Diode nach Anspruch 18, in der der Leuchtstoff ein Yttrium- Aluminium-Granat-Fluoreszenzmaterial enthält, das ein erstes Fluoreszenzmaterial und ein zweites Fluoreszenzmaterial enthält, wobei ein Teil von Yttrium in dem ersten und zweiten Fluoreszenzmaterial mit Gadoliunium in unterschiedlichen Substitutionsgraden substituiert ist.
22. Lichtemittierende Diode nach Anspruch 14, in der der Hauptemissionspeak der lichtemittierenden Komponente in den Bereich von 400 nm bis 530 nm gelegt ist und die Hauptemissionswellenlänge des Leuchtstoffs so eingestellt ist, dass sie länger als der Hauptemissionspeak der lichtemittierenden Komponente ist.
23. Lichtemittierende Diode nach Anspruch 1, in der der Hauptemissionspeak der lichtemittierenden Komponente in den Bereich von 400 nm bis 530 nm gelegt ist und die Hauptemissionswellenlänge des Leuchtstoffs so eingestellt ist, dass sie länger als der Hauptemissionspeak der lichtemittierenden Komponente ist, wodurch auf Weiß basierendes Licht ausgesandt werden kann.
24. Lichtemittierende Vorrichtung oder Diode gemäß einem der Ansprüche 1 bis 23, wobei das durch Mischen des von dem lichtemittierenden Bauteil emittierten Lichts mit dem von dem Leuchtstoff erzeugten Licht erhaltene Licht im wesentlichen längs des Ortes der Schwarzkörperstrahlung im Farbtondiagramm auftritt.
25. Lichtemittierende Vorrichtung, umfassend ein lichtemittierendes Bauteil und einen Leuchtstoff, der einen Teil des von dem lichtemittierenden Bauteil ausgesandten Lichts absorbieren und Licht einer von der des absorbierten Lichts verschiedenen Wellenlänge emittieren kann, wobei weißes Licht, das durch Mischen des von dem lichtemittierenden Bauteil emittierten Lichts mit dem von dem Leuchtstoff erzeugten Licht erhalten wird, im wesentlichen längs des Ortes der Schwarzkörperstrahlung im Farbtondiagramm auftritt.
26. Lichtemittierende Vorrichtung nach Anspruch 25, wobei das lichtemittierende Bauteil eine blaue LED ist.
27. Lichtemittierende Vorrichtung nach Anspruch 25 oder 26, wobei ein Punkt der Farbtonskala, der dem von dem lichtemittierenden Bauteil erzeugten Licht entspricht, ein Punkt der Farbtonskala, der dem von dem Leuchtstoff erzeugten Licht entspricht und eine gewisse Menge des Leuchtstoffs so eingestellt werden, dass weißes Licht im wesentlichen längs des Ortes der Schwarzkörperstrahlung auftritt.
28. Lichtemittierende Vorrichtung nach einem der Ansprüche 25 bis 27, wobei das weiße Licht eine Farbtemperatur von 8080 oder 4400 K aufweist.
29. Lichtemittierende Vorrichtung nach einem der Ansprüche 25 bis 28, wobei der Hauptemissionspeak des lichtemittierenden Bauteils im Bereich von 400 nm bis 530 nm liegt.
30. Lichtemittierende Vorrichtung nach einem der Ansprüche 25 bis 29, wobei der Hauptemissionspeak des lichtemittierenden Bauteils im Bereich von 420 nm bis 490 nm liegt.
31. Lichtemittierende Vorrichtung nach einem der Ansprüche 25 bis 30, wobei der Hauptemissionspeak des lichtemittierenden Bauteils im Bereich von 450 nm bis 475 nm liegt.
32. Lichtemittierende Vorrichtung nach einem der Ansprüche 25 bis 31, wobei die Struktur des lichtemittierenden Bauteils eine Homostruktur, Heterostruktur oder eine doppelte Heterostruktur ist, die einen MIS Übergang, einen PIN Übergang oder einen PIN Übergang aufweist.
33. Lichtemittierende Vorrichtung nach einem der Ansprüche 25 bis 32, wobei das lichtemittierende Bauteil eine aktive Schicht umfasst, die eine Einquantentopfstruktur oder Mehrquantentopfstruktur aufweist.
34. Lichtemittierende Vorrichtung nach einem der Ansprüche 25 bis 33, wobei der Leuchtstoff durch folgende Schritte hergestellt wird: Lösen von Seltenerdelementen in Säure in stöchiometrischen Mengen, Mitausfällen der Lösung mit Oxalsäure zum Erhalt eines Sediments, Brennen des Sediments zum Erhalt eines Oxids, und Brennen einer Mischung aus dem genannten Oxid, einem Ammoniumfluorid und Aluminiumoxid.
35. Lichtemittierende Vorrichtung nach einem der Ansprüche 25 bis 34, wobei ein Emissisonspeak des Leuchtstoffes in den Bereich von 530 bis 570 nm gelegt ist.
36. Lichtemittierende Vorrichtung nach einem der Ansprüche 25 bis 35, bei der das lichtemittierende Teil auf eine Kugelschale einer ersten Anordnung aufgebracht ist, wobei besagte Kugelschale mit einem Überzugsmaterial gefüllt ist, um das lichtemittierende Teil zu bedecken und worin das lichtemittierende Teil zwei Elektroden aufweist, von denen eine mittels eines leitenden Drahtes mit einer zweiten Anordnung verbunden ist, wobei das besagte lichtemittierende Teil und die besagte Kugelschale und das besagte Überzugsmaterial mit einem Formstoff bedeckt sind und die besagte erste Anordnung und die besagte zweite Anordnung teilweise mit diesem besagten Formstoff überzogen sind und der besagte Leuchtstoff entweder in dem Formstoff oder in dem Überzugsmaterial oder in beiden, dem Überzugsmaterial und dem Formstoff, enthalten sein kann.
DE1997224670 1996-07-29 1997-07-29 Lichtemittierende Vorrichtung und Diode Expired - Lifetime DE29724670U1 (de)

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DE102018217889A1 (de) 2018-10-18 2020-04-23 Osram Opto Semiconductors Gmbh Gelber Leuchtstoff und Konversions-LED
DE102018217889B4 (de) 2018-10-18 2023-09-21 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Gelber Leuchtstoff und Konversions-LED

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